DE59706862D1 - Verfahren zur bestimmung von tiefenprofilen im dünnschichtbereich - Google Patents

Verfahren zur bestimmung von tiefenprofilen im dünnschichtbereich

Info

Publication number
DE59706862D1
DE59706862D1 DE59706862T DE59706862T DE59706862D1 DE 59706862 D1 DE59706862 D1 DE 59706862D1 DE 59706862 T DE59706862 T DE 59706862T DE 59706862 T DE59706862 T DE 59706862T DE 59706862 D1 DE59706862 D1 DE 59706862D1
Authority
DE
Germany
Prior art keywords
pct
coating
sec
depth profiles
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE59706862T
Other languages
English (en)
Inventor
Alfred Benninghoven
Ewald Niehuis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ion-Tof Technologies 48149 Muenster De GmbH
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to DE59706862T priority Critical patent/DE59706862D1/de
Application granted granted Critical
Publication of DE59706862D1 publication Critical patent/DE59706862D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/10—Ion sources; Ion guns
    • H01J49/14—Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
DE59706862T 1996-10-11 1997-10-13 Verfahren zur bestimmung von tiefenprofilen im dünnschichtbereich Expired - Lifetime DE59706862D1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE59706862T DE59706862D1 (de) 1996-10-11 1997-10-13 Verfahren zur bestimmung von tiefenprofilen im dünnschichtbereich

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19641981A DE19641981C2 (de) 1996-10-11 1996-10-11 Verfahren zur Bestimmung von Tiefenprofilen im Dünnschichtbereich
DE59706862T DE59706862D1 (de) 1996-10-11 1997-10-13 Verfahren zur bestimmung von tiefenprofilen im dünnschichtbereich
PCT/EP1997/005632 WO1998016948A1 (de) 1996-10-11 1997-10-13 Verfahren zur bestimmung von tiefenprofilen im dünnschichtbereich

Publications (1)

Publication Number Publication Date
DE59706862D1 true DE59706862D1 (de) 2002-05-08

Family

ID=7808487

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19641981A Expired - Fee Related DE19641981C2 (de) 1996-10-11 1996-10-11 Verfahren zur Bestimmung von Tiefenprofilen im Dünnschichtbereich
DE59706862T Expired - Lifetime DE59706862D1 (de) 1996-10-11 1997-10-13 Verfahren zur bestimmung von tiefenprofilen im dünnschichtbereich

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE19641981A Expired - Fee Related DE19641981C2 (de) 1996-10-11 1996-10-11 Verfahren zur Bestimmung von Tiefenprofilen im Dünnschichtbereich

Country Status (6)

Country Link
US (1) US6107629A (de)
EP (1) EP0873574B1 (de)
JP (1) JP4077881B2 (de)
AT (1) ATE215735T1 (de)
DE (2) DE19641981C2 (de)
WO (1) WO1998016948A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5920068A (en) * 1998-03-05 1999-07-06 Micron Technology, Inc. Analysis of semiconductor surfaces by secondary ion mass spectrometry
US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US6694284B1 (en) 2000-09-20 2004-02-17 Kla-Tencor Technologies Corp. Methods and systems for determining at least four properties of a specimen
US6812045B1 (en) 2000-09-20 2004-11-02 Kla-Tencor, Inc. Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation
US7196782B2 (en) 2000-09-20 2007-03-27 Kla-Tencor Technologies Corp. Methods and systems for determining a thin film characteristic and an electrical property of a specimen
US6782337B2 (en) 2000-09-20 2004-08-24 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension an a presence of defects on a specimen
US6673637B2 (en) 2000-09-20 2004-01-06 Kla-Tencor Technologies Methods and systems for determining a presence of macro defects and overlay of a specimen
JP4931799B2 (ja) * 2004-03-22 2012-05-16 ケーエルエー−テンカー コーポレイション 基板の特徴を測定する、または分析のために基板を準備する方法およびシステム
DE102005027937B3 (de) * 2005-06-16 2006-12-07 Ion-Tof Gmbh Verfahren zur Analyse einer Festkörperprobe
JP5885474B2 (ja) * 2011-11-17 2016-03-15 キヤノン株式会社 質量分布分析方法及び質量分布分析装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE758925A (fr) * 1969-11-14 1971-04-16 Bayer Ag Procede pour l'analyse des surfaces de corps solides par spectrometrie de masse
DE3125335A1 (de) * 1981-06-27 1983-01-13 Alfred Prof. Dr. 4400 Münster Benninghoven Verfahren zur analyse von gasen und fluessigkeiten
US4368099A (en) * 1982-02-05 1983-01-11 Rca Corporation Development of germanium selenide photoresist
CA1212783A (en) * 1983-10-28 1986-10-14 George M. Bancroft Suppression of molecular ions in secondary ion mass spectra
US4559096A (en) * 1984-06-25 1985-12-17 The United States Of America As Represented By The United States Department Of Energy Method of precisely modifying predetermined surface layers of a workpiece by cluster ion impact therewith
US4874946A (en) * 1985-04-30 1989-10-17 The United States Of America As Represented By The United States Department Of Energy Method and apparatus for analyzing the internal chemistry and compositional variations of materials and devices
GB2269934B (en) * 1992-08-19 1996-03-27 Toshiba Cambridge Res Center Spectrometer
US5442174A (en) * 1992-10-23 1995-08-15 Fujitsu Limited Measurement of trace element concentration distribution, and evaluation of carriers, in semiconductors, and preparation of standard samples
US5689112A (en) * 1996-04-12 1997-11-18 Enge; Harald A. Apparatus for detection of surface contaminations on silicon wafers

Also Published As

Publication number Publication date
WO1998016948A1 (de) 1998-04-23
DE19641981C2 (de) 2000-12-07
ATE215735T1 (de) 2002-04-15
EP0873574B1 (de) 2002-04-03
JP2000502498A (ja) 2000-02-29
EP0873574A1 (de) 1998-10-28
US6107629A (en) 2000-08-22
JP4077881B2 (ja) 2008-04-23
DE19641981A1 (de) 1998-04-16

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: ION-TOF GESELLSCHAFT FUER HERSTELLUNG VON MASSENSPE

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: ION-TOF TECHNOLOGIES GMBH, 48149 MUENSTER, DE