DE59310292D1 - Entfernung von Verunreinigungen und Verbesserung der Minoritätsladungsträger-Lebensdauer bei Silicium - Google Patents

Entfernung von Verunreinigungen und Verbesserung der Minoritätsladungsträger-Lebensdauer bei Silicium

Info

Publication number
DE59310292D1
DE59310292D1 DE59310292T DE59310292T DE59310292D1 DE 59310292 D1 DE59310292 D1 DE 59310292D1 DE 59310292 T DE59310292 T DE 59310292T DE 59310292 T DE59310292 T DE 59310292T DE 59310292 D1 DE59310292 D1 DE 59310292D1
Authority
DE
Germany
Prior art keywords
minority carrier
silicon
contaminants
removal
improvement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE59310292T
Other languages
English (en)
Inventor
Robert Falster
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from IT92RM687 external-priority patent/IT1258487B/it
Application filed by SunEdison Inc filed Critical SunEdison Inc
Application granted granted Critical
Publication of DE59310292D1 publication Critical patent/DE59310292D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/024—Defect control-gettering and annealing
DE59310292T 1992-09-23 1993-09-23 Entfernung von Verunreinigungen und Verbesserung der Minoritätsladungsträger-Lebensdauer bei Silicium Expired - Fee Related DE59310292D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT92RM687 IT1258487B (it) 1992-09-23 1992-09-23 Procedimento per migliorare il tempo di vita dei portatori di minoranza in fette di silicio o in dispositivi a semiconduttore con esse prodotti
US07/971,056 US5272119A (en) 1992-09-23 1992-11-03 Process for contamination removal and minority carrier lifetime improvement in silicon

Publications (1)

Publication Number Publication Date
DE59310292D1 true DE59310292D1 (de) 2002-08-14

Family

ID=26332021

Family Applications (1)

Application Number Title Priority Date Filing Date
DE59310292T Expired - Fee Related DE59310292D1 (de) 1992-09-23 1993-09-23 Entfernung von Verunreinigungen und Verbesserung der Minoritätsladungsträger-Lebensdauer bei Silicium

Country Status (9)

Country Link
US (1) US5272119A (de)
EP (1) EP0590508B1 (de)
JP (1) JP2735772B2 (de)
KR (1) KR100298529B1 (de)
CN (1) CN1034893C (de)
AT (1) ATE220477T1 (de)
DE (1) DE59310292D1 (de)
FI (1) FI934149A (de)
MY (1) MY110011A (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6997985B1 (en) 1993-02-15 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
JP3562588B2 (ja) * 1993-02-15 2004-09-08 株式会社半導体エネルギー研究所 半導体装置の製造方法
JP3193803B2 (ja) * 1993-03-12 2001-07-30 株式会社半導体エネルギー研究所 半導体素子の作製方法
US5418172A (en) * 1993-06-29 1995-05-23 Memc Electronic Materials S.P.A. Method for detecting sources of contamination in silicon using a contamination monitor wafer
KR100240023B1 (ko) * 1996-11-29 2000-01-15 윤종용 반도체 웨이퍼 열처리방법 및 이에 따라 형성된 반도체 웨이퍼
US5913103A (en) * 1997-05-13 1999-06-15 Integrated Device Technology, Inc. Method of detecting metal contaminants in a wet chemical using enhanced semiconductor growth phenomena
US6482269B1 (en) 1997-05-29 2002-11-19 Memc Electronic Materials, Inc. Process for the removal of copper and other metallic impurities from silicon
US6100167A (en) * 1997-05-29 2000-08-08 Memc Electronic Materials, Inc. Process for the removal of copper from polished boron doped silicon wafers
US20030104680A1 (en) * 2001-11-13 2003-06-05 Memc Electronic Materials, Inc. Process for the removal of copper from polished boron-doped silicon wafers
US6838321B2 (en) * 2002-09-26 2005-01-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor substrate with defects reduced or removed and method of manufacturing the same, and semiconductor device capable of bidirectionally retaining breakdown voltage and method of manufacturing the same
US20040063302A1 (en) * 2002-09-26 2004-04-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor substrate with defects reduced or removed and method of manufacturing the same, and semiconductor device capable of bidirectionally retaining breakdown voltage and method of manufacturing the same
JP4781616B2 (ja) * 2002-09-26 2011-09-28 三菱電機株式会社 半導体基板の製造方法及び半導体装置の製造方法
JP5042445B2 (ja) * 2004-04-14 2012-10-03 株式会社Ｓｕｍｃｏ シリコンウェーハのゲッタリング効率を評価する方法
JP4743010B2 (ja) * 2005-08-26 2011-08-10 株式会社Ｓｕｍｃｏ シリコンウェーハの表面欠陥評価方法
US7657390B2 (en) * 2005-11-02 2010-02-02 Applied Materials, Inc. Reclaiming substrates having defects and contaminants
US8133800B2 (en) * 2008-08-29 2012-03-13 Silicon Genesis Corporation Free-standing thickness of single crystal material and method having carrier lifetimes
CN102709181B (zh) * 2012-05-08 2014-12-31 常州天合光能有限公司 提高硅晶体电池片转换效率的方法
CN106505004B (zh) * 2015-09-07 2019-05-03 中芯国际集成电路制造(上海)有限公司 检测晶圆中铁含量异常的装置及其方法
CN111398774B (zh) * 2020-03-18 2022-02-15 西安奕斯伟材料科技有限公司 硅片少子寿命的测试方法及装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3929529A (en) * 1974-12-09 1975-12-30 Ibm Method for gettering contaminants in monocrystalline silicon
US4053335A (en) * 1976-04-02 1977-10-11 International Business Machines Corporation Method of gettering using backside polycrystalline silicon
JPS583375B2 (ja) * 1979-01-19 1983-01-21 超エル・エス・アイ技術研究組合 シリコン単結晶ウエハ−の製造方法
US4231809A (en) * 1979-05-25 1980-11-04 Bell Telephone Laboratories, Incorporated Method of removing impurity metals from semiconductor devices
US4410395A (en) * 1982-05-10 1983-10-18 Fairchild Camera & Instrument Corporation Method of removing bulk impurities from semiconductor wafers
DE3473971D1 (en) * 1984-06-20 1988-10-13 Ibm Method of standardization and stabilization of semiconductor wafers
US4732874A (en) * 1986-10-15 1988-03-22 Delco Electronics Corporation Removing metal precipitates from semiconductor devices
JPS63136531A (ja) * 1986-11-27 1988-06-08 Toshiba Corp 半導体装置
JPH0290531A (ja) * 1988-09-28 1990-03-30 Hitachi Ltd 半導体装置の製造方法およびウエハ
US4929564A (en) * 1988-10-21 1990-05-29 Nippon Mining Co., Ltd. Method for producing compound semiconductor single crystals and method for producing compound semiconductor devices
JP2671494B2 (ja) * 1989-05-16 1997-10-29 富士通株式会社 ゲッタリング方法

Also Published As

Publication number Publication date
KR100298529B1 (ko) 2001-11-30
JPH06196488A (ja) 1994-07-15
CN1034893C (zh) 1997-05-14
EP0590508A3 (en) 1997-10-08
US5272119A (en) 1993-12-21
ATE220477T1 (de) 2002-07-15
FI934149A0 (fi) 1993-09-22
MY110011A (en) 1997-11-29
FI934149A (fi) 1994-03-24
CN1087208A (zh) 1994-05-25
EP0590508A2 (de) 1994-04-06
JP2735772B2 (ja) 1998-04-02
KR940008018A (ko) 1994-04-28
EP0590508B1 (de) 2002-07-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee