DE58907794D1 - Verfahren und Schaltungsanordnung zum Ansteuern eines Halbleiterschalters unter Verwendung eines induktiven Übertragers. - Google Patents

Verfahren und Schaltungsanordnung zum Ansteuern eines Halbleiterschalters unter Verwendung eines induktiven Übertragers.

Info

Publication number
DE58907794D1
DE58907794D1 DE58907794T DE58907794T DE58907794D1 DE 58907794 D1 DE58907794 D1 DE 58907794D1 DE 58907794 T DE58907794 T DE 58907794T DE 58907794 T DE58907794 T DE 58907794T DE 58907794 D1 DE58907794 D1 DE 58907794D1
Authority
DE
Germany
Prior art keywords
transformer
primary winding
semiconductor switch
switch
primary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE58907794T
Other languages
English (en)
Inventor
Reinhard Dipl Ing Bloeckl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of DE58907794D1 publication Critical patent/DE58907794D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/722—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit
    • H03K17/723—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
DE58907794T 1989-09-19 1989-09-19 Verfahren und Schaltungsanordnung zum Ansteuern eines Halbleiterschalters unter Verwendung eines induktiven Übertragers. Expired - Fee Related DE58907794D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP89117326A EP0418408B1 (de) 1989-09-19 1989-09-19 Verfahren und Schaltungsanordnung zum Ansteuern eines Halbleiterschalters unter Verwendung eines induktiven Übertragers

Publications (1)

Publication Number Publication Date
DE58907794D1 true DE58907794D1 (de) 1994-07-07

Family

ID=8201904

Family Applications (1)

Application Number Title Priority Date Filing Date
DE58907794T Expired - Fee Related DE58907794D1 (de) 1989-09-19 1989-09-19 Verfahren und Schaltungsanordnung zum Ansteuern eines Halbleiterschalters unter Verwendung eines induktiven Übertragers.

Country Status (5)

Country Link
US (1) US5187384A (de)
EP (1) EP0418408B1 (de)
JP (1) JPH03117212A (de)
AT (1) ATE106639T1 (de)
DE (1) DE58907794D1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6288602B1 (en) * 1993-06-25 2001-09-11 International Business Machines Corporation CMOS on-chip precision voltage reference scheme
US5530396A (en) * 1994-09-19 1996-06-25 Center For Innovative Technology Damped EMI input filter power factor correction circuits
DE102006038154A1 (de) * 2006-08-16 2008-02-21 Semikron Elektronik Gmbh & Co. Kg Verfahren zur Impulsübertragung und Schaltungsanordnung zur Durchführung dieses Verfahrens
US8593839B2 (en) * 2009-09-17 2013-11-26 Linear Technology Corporation Accuracy of a volt-second clamp in an isolated DC-DC converter

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2986677A (en) * 1957-06-12 1961-05-30 Webcor Inc Relay gate
JPS5551223B1 (de) * 1969-09-20 1980-12-23
US4005317A (en) * 1975-05-27 1977-01-25 Dressen-Barnes Electronics Corporation Switching circuitry
US4117819A (en) * 1976-10-26 1978-10-03 Motorola, Inc. Threshold circuit suitable for use in electronic ignition systems
DE2827736C2 (de) * 1978-06-22 1981-09-17 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Ansteuerung von GTO-Thyristoren
EP0105049B1 (de) * 1982-09-30 1986-01-22 ANT Nachrichtentechnik GmbH Gleichspannungswandler mit einem impulsbreitengesteuerten Halbleiterschalter
EP0154062B1 (de) * 1984-02-29 1988-07-20 International Business Machines Corporation Leistungsschaltkreis
JPS6221322A (ja) * 1985-07-22 1987-01-29 Yaskawa Electric Mfg Co Ltd パルストランスによるパワ−ｍｏｓ電界効果トランジスタの駆動回路
US4652809A (en) * 1986-01-06 1987-03-24 Microtel Limited Switched regulator circuit having an extended duty cycle range
US4736285A (en) * 1986-06-19 1988-04-05 Veeco Instruments, Inc. Demagnetization circuit for forward converter
US4758941A (en) * 1987-10-30 1988-07-19 International Business Machines Corporation MOSFET fullbridge switching regulator having transformer coupled MOSFET drive circuit
US4870298A (en) * 1988-04-22 1989-09-26 Mark Telefus Power switch booster circuit
JPH02121408A (ja) * 1988-10-31 1990-05-09 Nec Corp トランジスタ駆動回路

Also Published As

Publication number Publication date
EP0418408B1 (de) 1994-06-01
EP0418408A1 (de) 1991-03-27
ATE106639T1 (de) 1994-06-15
US5187384A (en) 1993-02-16
JPH03117212A (ja) 1991-05-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee