DE50208787D1 - Verfahren zur strukturierung einer auf einem trägermaterial aufgebrachten oxidschicht - Google Patents
Verfahren zur strukturierung einer auf einem trägermaterial aufgebrachten oxidschichtInfo
- Publication number
- DE50208787D1 DE50208787D1 DE50208787T DE50208787T DE50208787D1 DE 50208787 D1 DE50208787 D1 DE 50208787D1 DE 50208787 T DE50208787 T DE 50208787T DE 50208787 T DE50208787 T DE 50208787T DE 50208787 D1 DE50208787 D1 DE 50208787D1
- Authority
- DE
- Germany
- Prior art keywords
- oxide layer
- structuring
- layer applied
- carrier material
- printed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title abstract 3
- 239000012876 carrier material Substances 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000007650 screen-printing Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE50208787T DE50208787D1 (de) | 2001-02-02 | 2002-02-01 | Verfahren zur strukturierung einer auf einem trägermaterial aufgebrachten oxidschicht |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10104726A DE10104726A1 (de) | 2001-02-02 | 2001-02-02 | Verfahren zur Strukturierung einer auf einem Trägermaterial aufgebrachten Oxidschicht |
| PCT/EP2002/001096 WO2002061854A2 (de) | 2001-02-02 | 2002-02-01 | Verfahren zur strukturierung einer auf einem trägermaterial aufgebrachten oxidschicht |
| DE50208787T DE50208787D1 (de) | 2001-02-02 | 2002-02-01 | Verfahren zur strukturierung einer auf einem trägermaterial aufgebrachten oxidschicht |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE50208787D1 true DE50208787D1 (de) | 2007-01-04 |
Family
ID=7672635
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE10104726A Withdrawn DE10104726A1 (de) | 2001-02-02 | 2001-02-02 | Verfahren zur Strukturierung einer auf einem Trägermaterial aufgebrachten Oxidschicht |
| DE50208787T Expired - Lifetime DE50208787D1 (de) | 2001-02-02 | 2002-02-01 | Verfahren zur strukturierung einer auf einem trägermaterial aufgebrachten oxidschicht |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE10104726A Withdrawn DE10104726A1 (de) | 2001-02-02 | 2001-02-02 | Verfahren zur Strukturierung einer auf einem Trägermaterial aufgebrachten Oxidschicht |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7129109B2 (de) |
| EP (1) | EP1390987B1 (de) |
| JP (1) | JP2004520713A (de) |
| CN (1) | CN1316638C (de) |
| AT (1) | ATE346382T1 (de) |
| AU (1) | AU2002244699B2 (de) |
| DE (2) | DE10104726A1 (de) |
| WO (1) | WO2002061854A2 (de) |
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| JP4845742B2 (ja) * | 2004-02-13 | 2011-12-28 | シェル ゾーラー ゲーエムベーハー | ウエハに液状ドーパント溶液を塗布するための機器 |
| JP4582538B2 (ja) * | 2004-10-21 | 2010-11-17 | Ｏｋｉセミコンダクタ株式会社 | 導電性インクの印刷方法及び導電性インクの印刷装置 |
| KR101188425B1 (ko) * | 2005-08-24 | 2012-10-05 | 엘지디스플레이 주식회사 | 식각 테이프 및 이를 이용한 액정 표시 장치용 어레이기판의 제조 방법 |
| KR20080104130A (ko) * | 2006-02-28 | 2008-12-01 | 시바 홀딩 인코포레이티드 | 항균성 화합물 |
| DE502006005702D1 (de) * | 2006-05-04 | 2010-01-28 | Elektrobit Wireless Comm Ltd | Verfahren zur Inbetriebnahme eines RFID-Netzwerks |
| US9105776B2 (en) | 2006-05-15 | 2015-08-11 | Stion Corporation | Method and structure for thin film photovoltaic materials using semiconductor materials |
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| FR2906405B1 (fr) * | 2006-09-22 | 2008-12-19 | Commissariat Energie Atomique | Procede de realisation de regions dopees dans un substrat et de cellule photovoltaique |
| CN101755237B (zh) * | 2006-12-05 | 2014-04-09 | 纳诺泰拉公司 | 使表面形成图案的方法 |
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| US20090139568A1 (en) * | 2007-11-19 | 2009-06-04 | Applied Materials, Inc. | Crystalline Solar Cell Metallization Methods |
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-
2001
- 2001-02-02 DE DE10104726A patent/DE10104726A1/de not_active Withdrawn
-
2002
- 2002-02-01 WO PCT/EP2002/001096 patent/WO2002061854A2/de active IP Right Grant
- 2002-02-01 JP JP2002561294A patent/JP2004520713A/ja active Pending
- 2002-02-01 AT AT02712887T patent/ATE346382T1/de not_active IP Right Cessation
- 2002-02-01 DE DE50208787T patent/DE50208787D1/de not_active Expired - Lifetime
- 2002-02-01 US US10/470,896 patent/US7129109B2/en not_active Expired - Fee Related
- 2002-02-01 EP EP02712887A patent/EP1390987B1/de not_active Expired - Lifetime
- 2002-02-01 CN CNB028044479A patent/CN1316638C/zh not_active Expired - Fee Related
- 2002-02-01 AU AU2002244699A patent/AU2002244699B2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| AU2002244699B2 (en) | 2006-08-31 |
| ATE346382T1 (de) | 2006-12-15 |
| JP2004520713A (ja) | 2004-07-08 |
| EP1390987B1 (de) | 2006-11-22 |
| CN1316638C (zh) | 2007-05-16 |
| US7129109B2 (en) | 2006-10-31 |
| EP1390987A2 (de) | 2004-02-25 |
| WO2002061854A3 (de) | 2003-12-11 |
| DE10104726A1 (de) | 2002-08-08 |
| CN1537334A (zh) | 2004-10-13 |
| WO2002061854A2 (de) | 2002-08-08 |
| US20040110393A1 (en) | 2004-06-10 |
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| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: SOLARWORLD INDUSTRIES DEUTSCHLAND GMBH, 81739 , DE |
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| 8327 | Change in the person/name/address of the patent owner |
Owner name: SOLARWORLD INDUSTRIES DEUTSCHLAND GMBH, 53175 , DE |