DE3778129D1 - Magnetschicht-speicherzelle oder -detektor. - Google Patents

Magnetschicht-speicherzelle oder -detektor.

Info

Publication number
DE3778129D1
DE3778129D1 DE8787117950T DE3778129T DE3778129D1 DE 3778129 D1 DE3778129 D1 DE 3778129D1 DE 8787117950 T DE8787117950 T DE 8787117950T DE 3778129 T DE3778129 T DE 3778129T DE 3778129 D1 DE3778129 D1 DE 3778129D1
Authority
DE
Germany
Prior art keywords
detector
magnetic layer
storage cell
layer storage
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787117950T
Other languages
English (en)
Inventor
James A Schuetz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Application granted granted Critical
Publication of DE3778129D1 publication Critical patent/DE3778129D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/10Magnetoresistive devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00Stock material or miscellaneous articles
    • Y10S428/90Magnetic feature
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/11Magnetic recording head
    • Y10T428/1193Magnetic recording head with interlaminar component [e.g., adhesion layer, etc.]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771Transition metal-base component
    • Y10T428/12806Refractory [Group IVB, VB, or VIB] metal-base component
    • Y10T428/12819Group VB metal-base component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771Transition metal-base component
    • Y10T428/12861Group VIII or IB metal-base component
    • Y10T428/12931Co-, Fe-, or Ni-base components, alternative to each other
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31678Of metal
DE8787117950T 1986-12-08 1987-12-04 Magnetschicht-speicherzelle oder -detektor. Expired - Fee Related DE3778129D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/939,315 US4857418A (en) 1986-12-08 1986-12-08 Resistive overlayer for magnetic films

Publications (1)

Publication Number Publication Date
DE3778129D1 true DE3778129D1 (de) 1992-05-14

Family

ID=25472941

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787117950T Expired - Fee Related DE3778129D1 (de) 1986-12-08 1987-12-04 Magnetschicht-speicherzelle oder -detektor.

Country Status (4)

Country Link
US (1) US4857418A (de)
EP (1) EP0271017B1 (de)
JP (1) JPS63234489A (de)
DE (1) DE3778129D1 (de)

Families Citing this family (37)

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US4945397A (en) * 1986-12-08 1990-07-31 Honeywell Inc. Resistive overlayer for magnetic films
US5173873A (en) * 1990-06-28 1992-12-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration High speed magneto-resistive random access memory
JP3483895B2 (ja) 1990-11-01 2004-01-06 株式会社東芝 磁気抵抗効果膜
US5251170A (en) * 1991-11-04 1993-10-05 Nonvolatile Electronics, Incorporated Offset magnetoresistive memory structures
US5420819A (en) * 1992-09-24 1995-05-30 Nonvolatile Electronics, Incorporated Method for sensing data in a magnetoresistive memory using large fractions of memory cell films for data storage
JP3184352B2 (ja) * 1993-02-18 2001-07-09 松下電器産業株式会社 メモリー素子
US5343422A (en) * 1993-02-23 1994-08-30 International Business Machines Corporation Nonvolatile magnetoresistive storage device using spin valve effect
US5834125A (en) * 1993-06-16 1998-11-10 Integrated Device Technology, Inc. Non-reactive anti-reflection coating
US5477482A (en) * 1993-10-01 1995-12-19 The United States Of America As Represented By The Secretary Of The Navy Ultra high density, non-volatile ferromagnetic random access memory
JP3767930B2 (ja) * 1995-11-13 2006-04-19 沖電気工業株式会社 情報の記録・再生方法および情報記憶装置
US5756366A (en) * 1995-12-21 1998-05-26 Honeywell Inc. Magnetic hardening of bit edges of magnetoresistive RAM
US5569617A (en) * 1995-12-21 1996-10-29 Honeywell Inc. Method of making integrated spacer for magnetoresistive RAM
US6317359B1 (en) 1999-07-07 2001-11-13 Iowa State University Research Foundation, Inc. Non-volatile magnetic circuit
US6343032B1 (en) 1999-07-07 2002-01-29 Iowa State University Research Foundation, Inc. Non-volatile spin dependent tunnel junction circuit
US6542000B1 (en) 1999-07-30 2003-04-01 Iowa State University Research Foundation, Inc. Nonvolatile programmable logic devices
US6693826B1 (en) 2001-07-30 2004-02-17 Iowa State University Research Foundation, Inc. Magnetic memory sensing method and apparatus
US6485989B1 (en) 2001-08-30 2002-11-26 Micron Technology, Inc. MRAM sense layer isolation
ATE475999T1 (de) 2003-03-04 2010-08-15 Rohm & Haas Elect Mat Koaxiale wellenleitermikrostrukturen und verfahern zu ihrer bildung
US7126330B2 (en) * 2004-06-03 2006-10-24 Honeywell International, Inc. Integrated three-dimensional magnetic sensing device and method to fabricate an integrated three-dimensional magnetic sensing device
JP2008188755A (ja) 2006-12-30 2008-08-21 Rohm & Haas Electronic Materials Llc 三次元微細構造体およびその形成方法
EP3104450A3 (de) 2007-03-20 2016-12-28 Nuvotronics, LLC Integrierte elektronische komponenten und herstellungsverfahren dafür
EP1973189B1 (de) 2007-03-20 2012-12-05 Nuvotronics, LLC Mikrostrukturen einer koaxialen Übertragungsleitung und Herstellungsverfahren dafür
US20090315554A1 (en) * 2008-06-20 2009-12-24 Honeywell International Inc. Integrated three-dimensional magnetic sensing device and method to fabricate an integrated three-dimensional magnetic sensing device
US8659371B2 (en) * 2009-03-03 2014-02-25 Bae Systems Information And Electronic Systems Integration Inc. Three-dimensional matrix structure for defining a coaxial transmission line channel
US20110123783A1 (en) * 2009-11-23 2011-05-26 David Sherrer Multilayer build processses and devices thereof
WO2011091334A2 (en) 2010-01-22 2011-07-28 Nuvotronics, Llc Thermal management
US8917150B2 (en) 2010-01-22 2014-12-23 Nuvotronics, Llc Waveguide balun having waveguide structures disposed over a ground plane and having probes located in channels
US8866300B1 (en) 2011-06-05 2014-10-21 Nuvotronics, Llc Devices and methods for solder flow control in three-dimensional microstructures
US8814601B1 (en) 2011-06-06 2014-08-26 Nuvotronics, Llc Batch fabricated microconnectors
US9993982B2 (en) 2011-07-13 2018-06-12 Nuvotronics, Inc. Methods of fabricating electronic and mechanical structures
US9325044B2 (en) 2013-01-26 2016-04-26 Nuvotronics, Inc. Multi-layer digital elliptic filter and method
US9306254B1 (en) 2013-03-15 2016-04-05 Nuvotronics, Inc. Substrate-free mechanical interconnection of electronic sub-systems using a spring configuration
US9306255B1 (en) 2013-03-15 2016-04-05 Nuvotronics, Inc. Microstructure including microstructural waveguide elements and/or IC chips that are mechanically interconnected to each other
US10310009B2 (en) 2014-01-17 2019-06-04 Nuvotronics, Inc Wafer scale test interface unit and contactors
US10847469B2 (en) 2016-04-26 2020-11-24 Cubic Corporation CTE compensation for wafer-level and chip-scale packages and assemblies
EP3224899A4 (de) 2014-12-03 2018-08-22 Nuvotronics, Inc. Systeme und verfahren zur herstellung von gestapelten schaltungen und übertragungsleitungen
US10319654B1 (en) 2017-12-01 2019-06-11 Cubic Corporation Integrated chip scale packages

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL231142A (de) * 1957-10-23
US3125743A (en) * 1958-03-19 1964-03-17 Nondestructive readout of magnetic cores
US3160863A (en) * 1961-12-18 1964-12-08 Ibm Magnetoresistive storage device
US3375503A (en) * 1963-09-13 1968-03-26 Ibm Magnetostatically coupled magnetic thin film devices
DE1259382B (de) * 1963-09-16 1968-01-25 Plessey Uk Ltd Magnetspeicherelement
US3461438A (en) * 1964-04-06 1969-08-12 Ibm Memory element having two orthogonally disposed magnetic films
FR1456686A (fr) * 1964-08-10 1966-07-08 Toko Inc Mémoire magnétique perfectionnée par absorption des déformations des fils magnétiques minces supprimant les distorsions magnétiques
US3587069A (en) * 1964-10-31 1971-06-22 Zaidan Hojin Parametron Kenkyu Ferromagnetic thin-film memory element and a method of recording information therein
US3452334A (en) * 1964-12-28 1969-06-24 Ibm Magnetic film memories with an intermediate conductive element as a drive line return path
GB1059310A (en) * 1965-04-27 1967-02-15 Mullard Ltd Improvements in or relating to depositing conductive magnetic material on to a non-conductive substrate
US3525023A (en) * 1965-08-05 1970-08-18 Sperry Rand Corp Multilayer thin film magnetic memory element
DE1474490A1 (de) * 1965-09-06 1970-04-23 Siemens Ag Magnetisches Duennschichtspeicherelement sowie Verfahren zum koinzidenten Auslesen einer aus diesen Duennschichtspeicherelementen bestehenden Speichermatrix
FR1541256A (fr) * 1966-12-07 Ibm Dispositif de mémoire associative
US3524173A (en) * 1967-05-22 1970-08-11 Ampex Process for electrodeposition of anisotropic magnetic films and a product formed by the process
US3623038A (en) * 1969-12-19 1971-11-23 Gte Sylvania Inc Pheral layer magnetic thin film element
US3701983A (en) * 1969-12-19 1972-10-31 Sylvania Electric Prod Magnetostatically coupled thin-film magnetic memory devices
US3701931A (en) * 1971-05-06 1972-10-31 Ibm Gold tantalum-nitrogen high conductivity metallurgy
US3864751A (en) * 1973-10-04 1975-02-04 Ibm Induced bias magnetoresistive read transducer
FR2276658A1 (fr) * 1974-06-25 1976-01-23 Tecsi Poste de lecture pour un registre a propagation de domaines magnetiques sur une couche mince
JPS576962Y2 (de) * 1974-07-26 1982-02-09
US3908194A (en) * 1974-08-19 1975-09-23 Ibm Integrated magnetoresistive read, inductive write, batch fabricated magnetic head
US4097802A (en) * 1975-06-30 1978-06-27 International Business Machines Corporation Magnetoresistive field sensor with a magnetic shield which prevents sensor response at fields below saturation of the shield
JPS5856243B2 (ja) * 1976-09-09 1983-12-14 富士通株式会社 バブル磁区用パ−マロイ膜の作成方法
SU763964A1 (ru) * 1978-07-13 1980-09-15 Предприятие П/Я М-5769 Датчик дл считывани цилиндрических магнитных доменов
US4208725A (en) * 1979-02-23 1980-06-17 Sperry Corporation Magneto-resistive detector for cross-tie wall memory system
JPS55123183A (en) * 1979-03-15 1980-09-22 Nec Corp Magnetic detector
US4356523A (en) * 1980-06-09 1982-10-26 Ampex Corporation Narrow track magnetoresistive transducer assembly
JPS584992A (ja) * 1981-07-01 1983-01-12 Hitachi Ltd 磁気電気変換素子
JPS5999370A (ja) * 1982-11-30 1984-06-08 Copal Co Ltd 磁気抵抗素子を具える磁気検出器の製造方法
US4459321A (en) * 1982-12-30 1984-07-10 International Business Machines Corporation Process for applying closely overlapped mutually protective barrier films

Also Published As

Publication number Publication date
JPH0424796B2 (de) 1992-04-28
EP0271017B1 (de) 1992-04-08
EP0271017A3 (en) 1990-03-28
JPS63234489A (ja) 1988-09-29
EP0271017A2 (de) 1988-06-15
US4857418A (en) 1989-08-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee