DE3265107D1 - Mixer-combiner with a transistor having two sources - Google Patents

Mixer-combiner with a transistor having two sources

Info

Publication number
DE3265107D1
DE3265107D1 DE8282201493T DE3265107T DE3265107D1 DE 3265107 D1 DE3265107 D1 DE 3265107D1 DE 8282201493 T DE8282201493 T DE 8282201493T DE 3265107 T DE3265107 T DE 3265107T DE 3265107 D1 DE3265107 D1 DE 3265107D1
Authority
DE
Germany
Prior art keywords
combiner
mixer
transistor
sources
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282201493T
Other languages
English (en)
Inventor
Peter Harrop
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electronique & Physique
Laboratoires dElectronique Philips SAS
Koninklijke Philips NV
Original Assignee
Electronique & Physique
Laboratoires dElectronique et de Physique Appliquee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electronique & Physique, Laboratoires dElectronique et de Physique Appliquee, Philips Gloeilampenfabrieken NV filed Critical Electronique & Physique
Application granted granted Critical
Publication of DE3265107D1 publication Critical patent/DE3265107D1/de
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D9/00Demodulation or transference of modulation of modulated electromagnetic waves
    • H03D9/06Transference of modulation using distributed inductance and capacitance
    • H03D9/0658Transference of modulation using distributed inductance and capacitance by means of semiconductor devices having more than two electrodes
    • H03D9/0675Transference of modulation using distributed inductance and capacitance by means of semiconductor devices having more than two electrodes using field effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H03D7/125Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0001Circuit elements of demodulators
    • H03D2200/0007Dual gate field effect transistors
DE8282201493T 1981-11-27 1982-11-25 Mixer-combiner with a transistor having two sources Expired DE3265107D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8122253A FR2517491A1 (fr) 1981-11-27 1981-11-27 Combineur-melangeur a transistor double source

Publications (1)

Publication Number Publication Date
DE3265107D1 true DE3265107D1 (en) 1985-09-05

Family

ID=9264436

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282201493T Expired DE3265107D1 (en) 1981-11-27 1982-11-25 Mixer-combiner with a transistor having two sources

Country Status (4)

Country Link
US (1) US4479260A (de)
EP (1) EP0081259B1 (de)
DE (1) DE3265107D1 (de)
FR (1) FR2517491A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7528728B2 (en) 2004-03-29 2009-05-05 Impinj Inc. Circuits for RFID tags with multiple non-independently driven RF ports
US7667589B2 (en) 2004-03-29 2010-02-23 Impinj, Inc. RFID tag uncoupling one of its antenna ports and methods
US7423539B2 (en) * 2004-03-31 2008-09-09 Impinj, Inc. RFID tags combining signals received from multiple RF ports
US7510117B2 (en) * 2004-06-04 2009-03-31 Impinj Inc Decoding with memory in RFID system
US7335931B2 (en) * 2004-12-17 2008-02-26 Raytheon Company Monolithic microwave integrated circuit compatible FET structure
JP5127362B2 (ja) * 2007-08-23 2013-01-23 三菱電機株式会社 2倍波発振器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3478229A (en) * 1968-04-29 1969-11-11 American Micro Syst Multifunction circuit device
US3581211A (en) * 1968-12-24 1971-05-25 Electronic Communications System for simultaneous reception of multiple signals
US4090139A (en) * 1976-05-07 1978-05-16 Rca Corporation Complementary symmetry FET mixer circuits
FR2411512A1 (fr) * 1977-12-06 1979-07-06 Lardy Jean Louis Porte logique a transistor mos multidrain
FR2460049A1 (fr) * 1979-06-25 1981-01-16 Labo Electronique Physique Filtre coupe-bande pour ligne de transmission hyperfrequence et circuit de polarisation de transistor hyperfrequence comprenant ce filtre
FR2477828A1 (fr) * 1980-03-07 1981-09-11 Thomson Csf Mat Tel Systeme d'interconnexion electrique et thermique pour des cartes a circuits electroniques, et armoire electrique equipee d'un tel systeme

Also Published As

Publication number Publication date
FR2517491A1 (fr) 1983-06-03
EP0081259B1 (de) 1985-07-31
FR2517491B1 (de) 1984-01-27
EP0081259A1 (de) 1983-06-15
US4479260A (en) 1984-10-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee