DE3177317T2 - Verfahren zur Herstellung von Blättern aus kristallinem Material - Google Patents

Verfahren zur Herstellung von Blättern aus kristallinem Material

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Publication number
DE3177317T2
DE3177317T2 DE3177317T DE3177317T DE3177317T2 DE 3177317 T2 DE3177317 T2 DE 3177317T2 DE 3177317 T DE3177317 T DE 3177317T DE 3177317 T DE3177317 T DE 3177317T DE 3177317 T2 DE3177317 T2 DE 3177317T2
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Germany
Prior art keywords
sheets
production
crystalline material
crystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3177317T
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English (en)
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DE3177317D1 (de
Inventor
Carl O Bozler
John C C Fan
Robert W Mcclelland
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Massachusetts Institute of Technology
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Massachusetts Institute of Technology
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Application filed by Massachusetts Institute of Technology filed Critical Massachusetts Institute of Technology
Publication of DE3177317D1 publication Critical patent/DE3177317D1/de
Application granted granted Critical
Publication of DE3177317T2 publication Critical patent/DE3177317T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687Multiple junction or tandem solar cells
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/04Pattern deposit, e.g. by using masks
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
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    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/2003Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S117/901Levitation, reduced gravity, microgravity, space
    • Y10S117/902Specified orientation, shape, crystallography, or size of seed or substrate
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    • Y10S117/903Dendrite or web or cage technique
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    • Y10S117/915Separating from substrate
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    • Y10S148/054Flat sheets-substrates
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S148/09Laser anneal
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/977Thinning or removal of substrate
DE3177317T 1980-04-10 1981-04-06 Verfahren zur Herstellung von Blättern aus kristallinem Material Expired - Lifetime DE3177317T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13889180A 1980-04-10 1980-04-10

Publications (2)

Publication Number Publication Date
DE3177317D1 DE3177317D1 (de) 1998-08-20
DE3177317T2 true DE3177317T2 (de) 1999-02-25

Family

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Family Applications (3)

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DE8686102375T Expired DE3177084D1 (en) 1980-04-10 1981-04-06 Method of producing sheets of crystalline material
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EP0191504B1 (de) 1989-08-16
JPH02283077A (ja) 1990-11-20
DE3177317D1 (de) 1998-08-20
WO1981002948A1 (en) 1981-10-15
EP0193830A3 (de) 1986-10-01
US5549747A (en) 1996-08-27
EP0506146A2 (de) 1992-09-30
DE3176676D1 (en) 1988-04-07
JPH0421334B2 (de) 1992-04-09
EP0194495A1 (de) 1986-09-17
EP0194495B1 (de) 1998-07-15
EP0506146A3 (de) 1995-02-01
EP0191504A2 (de) 1986-08-20
US4837182A (en) 1989-06-06
US4816420A (en) 1989-03-28
EP0049286B1 (de) 1988-03-02
JPS57500670A (de) 1982-04-15
JP2584164B2 (ja) 1997-02-19
US4727047A (en) 1988-02-23
EP0191505A2 (de) 1986-08-20
EP0192280A2 (de) 1986-08-27
JPH0620945A (ja) 1994-01-28
EP0049286A4 (de) 1982-08-05
EP0191503A3 (de) 1986-09-10
EP0193830A2 (de) 1986-09-10
DE3177084D1 (en) 1989-09-21
EP0191504A3 (en) 1986-09-10
JPH02283014A (ja) 1990-11-20
EP0191503A2 (de) 1986-08-20
EP0192280A3 (de) 1986-09-10
EP0191505A3 (de) 1986-09-10
EP0049286A1 (de) 1982-04-14

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