DE2813930A1 - LED with sharply defined radiation surface for range findings - has frame-like front electrode on light-emitting semiconductor and solid rear electrode opposite frame opening - Google Patents
LED with sharply defined radiation surface for range findings - has frame-like front electrode on light-emitting semiconductor and solid rear electrode opposite frame openingInfo
- Publication number
- DE2813930A1 DE2813930A1 DE19782813930 DE2813930A DE2813930A1 DE 2813930 A1 DE2813930 A1 DE 2813930A1 DE 19782813930 DE19782813930 DE 19782813930 DE 2813930 A DE2813930 A DE 2813930A DE 2813930 A1 DE2813930 A1 DE 2813930A1
- Authority
- DE
- Germany
- Prior art keywords
- light
- frame
- electrode
- rear electrode
- semiconductor body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Abstract
Description
LumineszenzdiodeLight emitting diode
Die Erfindung betrifft eine Lumineszenzdiode, bestehend aus einem unter Stromeinwirkung Licht emittierenden Halbleiterkörper und aus an diesen angelegten Elektrodenflächen.The invention relates to a light emitting diode, consisting of a under the action of current light-emitting semiconductor body and from applied thereto Electrode surfaces.
Derartige Lumineszenzdioden sind bekannt und im Handel erhältlich. Die Verwendung von Lumineszenzdioden zur automatischen Entfernungsmessung mittels Triangulation erfordert längliche, genau definierte Strahlungsflächen, welchebüber geeignete optische Abbildungselemente auf eine Meßfläche scharf begrenzt abgebildet werden müssen.Such luminescent diodes are known and are commercially available. The use of light emitting diodes for automatic distance measurement by means of Triangulation requires elongated, precisely defined radiation surfaces, which over suitable optical imaging elements imaged sharply delimited on a measuring surface Need to become.
Seitenverhältnisse in der Größenordnung 1 : 5, wie sie dazu erforderlich sind, sind mit den bisher bekannten Diodenkonfigurationen schwer zu realisieren. Ferner wird durch die übliche Anbringung der Elektrodenflächen innerhalb der strahlenden Flächen in Anwendungsfällen, wo die mögliche Form und Größe der strahlenden Fläche fixiert ist, die mögliche Strahlungsleistung aufgrund der reduzierten effektiven Strahlungsfläche verkleinert. Es ist das Ziel der Erfindung, eine Lumineszenzdiode zu schaffen, die insbesondere zur Verwendung in automatischen Entfernungsmessern geeignet ist, also eine scharf definierte Abstrahlfläche mit einer weitgehend homogenen Intensitätsverteilung liefert.Aspect ratios in the order of 1: 5 as required are difficult to implement with the previously known diode configurations. Furthermore, due to the usual attachment of the electrode surfaces within the radiating Areas in applications where the possible shape and size of the radiating surface is fixed, the possible radiant power due to the reduced effective radiation area is reduced. It is the aim of the invention to provide a light emitting diode to create, in particular for use in automatic rangefinders is suitable, so a sharply defined radiation surface with a largely homogeneous Intensity distribution supplies.
Erfindungsgemäß wird dies dadurch erreicht, daß die in Lichtabstrahlrichtung liegende Elektrodenfläche rahmenartig den Licht emittierenden Bereich umschließt und daß die rückseitige Elektrodenfläche entgegen der Lichtabstrahlrichtung gesehen hinter der Rahmenöffnung liegt.According to the invention this is achieved in that the light emission direction lying electrode surface surrounds the light-emitting area like a frame and that the rear electrode surface is seen against the direction of light emission behind the frame opening.
Einzelheiten der Erfindung und vorteilhafte Ausführungsbeispiele ergeben sich aus den Unteransprüchen und der Beschreibung, worin anhand der Zeichnung eine Anzahl von Ausführungsbeispielen erörtert wird.Details of the invention and advantageous embodiments result from the subclaims and the description, wherein based on the drawing a Number of embodiments will be discussed.
Es zeigen: Figur 1 und 1 a eine erste Ausführungsform der erfindungsgemäßen Lumineszenzdiode, Figur 2 und 2 a eine weitere Ausführungsform derselben, Figur 3 und 3 a eine dritte Ausführungsform, Figur 4 eine Fassung für eine erfindungsgemäße Lumineszenzdiode.They show: FIGS. 1 and 1a a first embodiment of the invention Light emitting diode, Figure 2 and 2a, a further embodiment of the same, Figure 3 and 3a a third embodiment, Figure 4 a version for a light emitting diode according to the invention.
Figur 1 zeigt eine erste Ausführungsform einer erfindungsgemäßen Lumineszenzdiode. Diese besteht aus einem quaderförmigen Halbleiterkörper 1, der in bekannter Weise unter Einwirkung von Strom Licht emittiert. Dieser quaderförmige Halbleiterkörper 1 ist an der Rückseite mit einer Elektrodenfläche 3 versehen. An der gegenüberliegenden Seite wird ein Licht emittierender Bereich 4 rahmenartig von der Gegenelektrode 2 umschlossen.Figure 1 shows a first embodiment of a light emitting diode according to the invention. This consists of a cuboid semiconductor body 1, which in a known manner emits light under the action of electricity. This cuboid semiconductor body 1 is provided with an electrode surface 3 on the back. On the opposite On the side, a light-emitting area 4 becomes frame-like from the counter electrode 2 enclosed.
Wie es sich gezeigt hat, strahlt die Licht emittierende Fläche 4 einer solchen Anordnung ein besonders homogenes Licht ab. Da sich die rückwärtige Elektrodenfläche 3 hauptsächlich im Bereich hinter dem Austrittsfenster 4 befindet, fließt im Mittelbereich des Halbleiterkörpers 1 ein verhältnismäßig starker Strom zwischen den Elektroden 3 und 2, was zu einer entsprechend starken Lichtemission führt.As has been shown, the light-emitting surface 4 emits a such an arrangement emits a particularly homogeneous light. Since the rear electrode surface 3 is mainly located in the area behind the exit window 4, flows in the central area of the semiconductor body 1 a relatively strong current between the electrodes 3 and 2, which leads to a correspondingly strong light emission.
Figur 2 zeigt ein abgewandeltes Ausführungsbeispiel der Lumineszenzdiode nach Figur 1. Hierbei ist der Halbleiterkörper 1 mit einer Facette 5 versehen, so daß im Bereich unmittelbar zwischen den Elektroden, der im Ausführungsbeispiel nach Figur 1 zwar bestromt wird und Licht emittiert, aber durch den Rand 2 abgedeckt wird und zur Mitte zu wegen des hohen Brechungsindexes des Halbleitermaterials und der dadurch bedingten starken Totalreflexion nur wenig zur Lichtemission beiträgt, kein Strom fließen kann und demnach auch keine unnötige Erwärmung des Halbleitermaterials 1 erfolgt.Figure 2 shows a modified embodiment of the light emitting diode according to FIG. 1. Here, the semiconductor body 1 is provided with a facet 5, see above that in the area directly between the electrodes, which in the embodiment according to Although FIG. 1 is energized and light is emitted, it is covered by the edge 2 becomes and to the center because of the high refractive index of the semiconductor material and the resulting strong total reflection contributes little to the light emission, no electricity can flow and therefore no unnecessary heating of Semiconductor material 1 takes place.
Um die Länge der Strombahnen weiter zu reduzieren und um eine gleichmäßigere Strahlungsverteilung zu erhalten, ist gemäß dem Ausführungsbeispiel nach Figur 3 und 3 a die obere Elektrodenfläche 6 gitterförmig mit entsprechenden Verbindungsstegen 6 a ausgebildet und umfaßt somit rahmenartig mehrere Teilbereiche 4 a von Licht emittierenden Flächen. Die rückwärtigen Elektrodenflächen 7 liegen auch hier abgesehen von Verbindungsstegen nur hinter den Licht emittierenden Bereichen 4 a.To further reduce the length of the current paths and to create a more uniform one To obtain radiation distribution is according to the embodiment of Figure 3 and 3a, the upper electrode surface 6 in a grid shape with corresponding connecting webs 6 a and thus comprises a frame-like several sub-areas 4 a of light emitting surfaces. The rear electrode surfaces 7 are also disregarded here of connecting webs only behind the light-emitting areas 4 a.
Figur 4 zeigt eine Fassung; die für die Aufnahme der erfindungsgemäßen Lumineszenzdiode besonders geeignet ist. Die Fassung besteht aus einem Grundkörper 8, der zweckmäßig ein Teil der Kamera, in der die Vorrichtung verwendet wird, ist sowie aus gegebenenfalls an den Grundkörper 8 angespritzten Haltern 8 a und 8 b. Zwischen diese Halter, die lichtdicht sind, wird die Lumineszenzdiode eingesetzt. Zweckmäßig ist die Fassung aus gut wärmeleitendem Material. Dadurch wird auch eine gute Kühlung der Lumineszenzdiode erreicht. Die rückwärtige Elektrodenfläche 7 kann direkt mit Masse verbunden werden, während die vordere Elektrodenfläche 6 über eine Leitung 7 a mit einem anderen Pol 7 der Stromquelle verbunden wird.Figure 4 shows a socket; for the inclusion of the invention Light emitting diode is particularly suitable. The socket consists of a base body 8, which is conveniently a part of the camera in which the device is used as well as from holders 8 a and 8 b which are optionally molded onto the base body 8. The light-emitting diode is inserted between these holders, which are light-tight. The socket made of a material that conducts heat well is expedient. This also becomes a good cooling of the light emitting diode is achieved. The rear electrode surface 7 can be connected directly to ground, while the front electrode surface 6 via a Line 7 a is connected to another pole 7 of the power source.
Durch diese Einbettung der Lumineszenzdiode wird nicht nur eine gute Kühlung und damit gleichmäßige Abstrahlleistung über längere Zeitdauer erreicht, sondern auch verhindert, daß die Diode seitwärts Licht abstrahlt, was bei der Entfernungsmessung zu Fehlergebnissen führen kann. Die Abstrahlflächen 4 sind genau begrenzt und können somit exakt auf das Objekt abgebildet werden.This embedding of the light emitting diode is not only a good one Cooling and thus even radiation power achieved over a longer period of time, but also prevents the diode from emitting light sideways, which is the case when measuring the distance to Can lead to error results. The radiating surfaces 4 are accurate limited and can therefore be mapped exactly on the object.
Zur Erhöhung der Lichtausbeute ist es zweckmäßig, die Oberflächen des Halbleiterkörpers 1 mit Ausnahme der lichtemittierenden Oberfläche in an sich bekannter Weise zu verspiegeln.To increase the light output, it is advisable to use the surfaces of the semiconductor body 1 with the exception of the light-emitting surface in itself to mirror in a known way.
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19782813930 DE2813930A1 (en) | 1978-03-31 | 1978-03-31 | LED with sharply defined radiation surface for range findings - has frame-like front electrode on light-emitting semiconductor and solid rear electrode opposite frame opening |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19782813930 DE2813930A1 (en) | 1978-03-31 | 1978-03-31 | LED with sharply defined radiation surface for range findings - has frame-like front electrode on light-emitting semiconductor and solid rear electrode opposite frame opening |
Publications (1)
Publication Number | Publication Date |
---|---|
DE2813930A1 true DE2813930A1 (en) | 1979-10-04 |
Family
ID=6035848
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19782813930 Withdrawn DE2813930A1 (en) | 1978-03-31 | 1978-03-31 | LED with sharply defined radiation surface for range findings - has frame-like front electrode on light-emitting semiconductor and solid rear electrode opposite frame opening |
Country Status (1)
Country | Link |
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DE (1) | DE2813930A1 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3138687A1 (en) * | 1981-09-29 | 1983-04-14 | Siemens AG, 1000 Berlin und 8000 München | Light-emitting diodes for signalling lights |
WO2001061765A1 (en) * | 2000-02-15 | 2001-08-23 | Osram Opto Semiconductors Gmbh | Semiconductor component which emits radiation, and method for producing the same |
DE10039433A1 (en) * | 2000-08-11 | 2002-02-28 | Osram Opto Semiconductors Gmbh | Semiconductor chip for optoelectronics |
US6730939B2 (en) | 2000-02-15 | 2004-05-04 | Osram Opto Semiconductors Gmbh | Radiation emitting semiconductor device |
DE102017101538A1 (en) | 2017-01-26 | 2018-07-26 | Osram Opto Semiconductors Gmbh | Method for classifying semiconductor chips and semiconductor chip |
WO2021224324A1 (en) * | 2020-05-07 | 2021-11-11 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor component and method for producing a radiation-emitting semiconductor component |
-
1978
- 1978-03-31 DE DE19782813930 patent/DE2813930A1/en not_active Withdrawn
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3138687A1 (en) * | 1981-09-29 | 1983-04-14 | Siemens AG, 1000 Berlin und 8000 München | Light-emitting diodes for signalling lights |
WO2001061765A1 (en) * | 2000-02-15 | 2001-08-23 | Osram Opto Semiconductors Gmbh | Semiconductor component which emits radiation, and method for producing the same |
US6730939B2 (en) | 2000-02-15 | 2004-05-04 | Osram Opto Semiconductors Gmbh | Radiation emitting semiconductor device |
US7195942B2 (en) | 2000-02-15 | 2007-03-27 | Osram Gmbh | Radiation emitting semiconductor device |
US7205578B2 (en) | 2000-02-15 | 2007-04-17 | Osram Gmbh | Semiconductor component which emits radiation, and method for producing the same |
DE10039433A1 (en) * | 2000-08-11 | 2002-02-28 | Osram Opto Semiconductors Gmbh | Semiconductor chip for optoelectronics |
US6891199B2 (en) | 2000-08-11 | 2005-05-10 | Osram Gmbh | Radiation-emitting semiconductor chip and light-emitting diode |
DE10039433B4 (en) * | 2000-08-11 | 2017-10-26 | Osram Opto Semiconductors Gmbh | Semiconductor chip for optoelectronics |
DE102017101538A1 (en) | 2017-01-26 | 2018-07-26 | Osram Opto Semiconductors Gmbh | Method for classifying semiconductor chips and semiconductor chip |
DE102017101538B4 (en) | 2017-01-26 | 2022-09-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Process for classifying semiconductor chips |
WO2021224324A1 (en) * | 2020-05-07 | 2021-11-11 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor component and method for producing a radiation-emitting semiconductor component |
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Legal Events
Date | Code | Title | Description |
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8139 | Disposal/non-payment of the annual fee |