DE2633191A1 - Light emitting diodes with increased light yield - coated with plastic esp. epoxy! resin contg. particles of high refractive index such as titania or gallium phosphide - Google Patents

Light emitting diodes with increased light yield - coated with plastic esp. epoxy! resin contg. particles of high refractive index such as titania or gallium phosphide

Info

Publication number
DE2633191A1
DE2633191A1 DE19762633191 DE2633191A DE2633191A1 DE 2633191 A1 DE2633191 A1 DE 2633191A1 DE 19762633191 DE19762633191 DE 19762633191 DE 2633191 A DE2633191 A DE 2633191A DE 2633191 A1 DE2633191 A1 DE 2633191A1
Authority
DE
Germany
Prior art keywords
particles
refractive index
plastic
esp
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19762633191
Other languages
German (de)
Inventor
Gerhard Krause
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19762633191 priority Critical patent/DE2633191A1/en
Publication of DE2633191A1 publication Critical patent/DE2633191A1/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package

Abstract

Luminescent component with a high light yield, where the light emitting element has a coating (a) of plastic, esp. epoxy resin, or other transparent material, esp. glass; and the refractive index (R.I) of the coating (a) is increased by adding small particles (b) with high R.I. Particles (b) are pref. TiO2 or GaP, and possess a dia. below 3 x 10-8 m, esp. below 1 x 10-8m. System provides a significant increase in the light yield of LED's or other elements producing photo- or cathode-luminescence.

Description

Lumineszenzstrahlung erzeugendes Bauelement mit großerLuminescence radiation generating component with a large

Strahlungsausbeute Die Erfindung betrifft ein Lumineszenzstrahlung erzeugendes Bauelement mit großer Strahlungsausbeute, bei dem der die Lumineszenzstrahlung abgebende Körper mit Kunststoff, insbesondere aus Epoxydharz, oder mit anderem transparenten Material, insbesondere Glas, belegt ist.Radiation Yield The invention relates to luminescence radiation Generating component with high radiation yield, in which the luminescence radiation dispensing body with plastic, in particular made of epoxy resin, or with other transparent material Material, especially glass, is occupied.

Wegen der großen Brechzahl der für Lumineszenzdioden verwendeten Halbleitermaterialien kann nur die unter einem kleinen Winkel (ca. + 170) zur Normalen auf die Halbleiteroberfläche auftreffende Strahlung den Halbleiterkörper verlassen. Durch Abdecken des Halbleiterkörpers mit einem Kunststoff kann dieser Winkel auf ca.Because of the high refractive index of the semiconductor materials used for light emitting diodes can only apply to the semiconductor surface at a small angle (approx. + 170) to the normal impinging radiation leave the semiconductor body. By covering the semiconductor body with a plastic, this angle can be increased to approx.

t 250 vergrößert werden. Damit wird aber noch immer keine große Strahlungsausbeute erzielt. Wünschenswert wären vielmehr Kunststoffe mit einer Brechzahl, die wesentlich größer als 1,5 ist.t 250 can be enlarged. However, this still does not result in a large radiation yield achieved. Rather, plastics would be desirable with a refractive index that is essential is greater than 1.5.

Derartige Kunststoffe sind aber bisher noch nicht bekannt.Such plastics are not yet known.

Es ist daher Aufgabe der Erfindung, ein Lumineszenzstrahlung erzeugendes Bauelement der obengenannten Art anzugeben, das eine wesentlich erhöhte Strahlungsausbeute aufweist.It is therefore the object of the invention to produce a luminescence radiation Specify component of the above type that has a significantly increased radiation output having.

Diese Aufgabe wird erfindungsgemäß dadurch gelöst, daß zur Erhöhung der Brechzahl dem Kunststoff beziehungsweise anderem transparenten Material kleine Partikel mit großer Brechzahl beigefügt sind.This object is achieved according to the invention in that to increase the refractive index of the plastic or other transparent material is small Particles with a large refractive index are attached.

Vorzugsweise bestehen die Partikel aus TiO2 oder GaP.The particles preferably consist of TiO2 or GaP.

In einer Weiterbildung der Erfindung ist vorgesehen, daß die Partikel einen Durchmesser aufweisen, der kleiner als 3 . 10 8 m, insbesondere kleiner als 1 . 10 8 m, ist. Dadurch wird erreicht, daß die vom Halbleiterkörper abgegebene Strahlung nicht durch Mehrfachstreuung und Absorption zu stark gedämpft wird. In a further development of the invention it is provided that the particles have a diameter smaller than 3. 10 8 m, especially smaller than 1 . 10 8 m, is. It is thereby achieved that the emitted from the semiconductor body Radiation is not attenuated too much by multiple scattering and absorption.

Mit Partikel mit großer Brechzahl gefüllte Kunststoffe sind als Abdeckmittel für Lumineszenzdioden besonders vorteilhaft. Es ist Jedoch auch möglich, andere gefüllte transparente Materialien, wie zum Beispiel Gläser, zu verwenden. Plastics filled with particles with a high refractive index are used as covering agents particularly advantageous for luminescent diodes. However, it is also possible for others to use filled transparent materials such as glasses.

Die erfindungsgemäße Belegung von Lumineszenzstrahlung abgebenden Körpern ist nicht nur bei Lumineszenzdioden möglich, sondern kann auch bei Bauelementen verwendet werden, die mit Fotolumineszenz oder Kathodenlumineszenz arbeiten. The coating according to the invention emits luminescence radiation Bodies is not only possible with luminescence diodes, but can also with components be used that work with photoluminescence or cathode luminescence.

Nachfolgend wird ein Ausführungsbeispiel der Erfindung an Hand der Zeichnung näher erläutert: In der Figur ist in einem n-leitenden Halbleiterkörper 1 eine p-leitende Zone 2 vorgesehen. Die am pn-Übergang 3 zwischen dem Halbleiterkörper 1 und der Zone 2 erzeugte Strahlung wird über die Oberfläche 4 des Halbleiterkörpers 1 beziehungsweise der Zone 2 abgegeben. Zur Erhöhung der Strahlungsausbeute ist auf der Oberfläche 4 eine vergrößert dargestellte Kunststoffschicht 5 aus Epoxydharz vorgesehen, der Partikel 6 mit einem Durchmesser#kleiner als 1 . :0 8 m beigefügt sind. Die Partikel 6 bestehen aus GaP und/oder TiO2. Die Oberfläche 7 der Kunststoffschicht 5 ist gekrümmt oder mit kleinen Pyramiden, Kegeln oder ähnlichen geometrischen Formen (auch unregelmäßig) versehen. An exemplary embodiment of the invention is described below with reference to the Drawing explained in more detail: In the figure is in an n-conducting semiconductor body 1 a p-conductive zone 2 is provided. The one at the pn junction 3 between the semiconductor body 1 and the zone 2 generated radiation is over the surface 4 of the semiconductor body 1 or zone 2. To increase the radiation output is on the surface 4 an enlarged plastic layer 5 made of epoxy resin provided, the particles 6 with a diameter # smaller than 1. : 0 8 m attached are. The particles 6 consist of GaP and / or TiO2. The surface 7 of the plastic layer 5 is curved or with small pyramids, cones or similar geometric shapes (also irregularly) provided.

5 Patentansprüche 1 Figur L e e r s e i t e 5 claims 1 figure L e r s e i t e

Claims (5)

P a t -e n t a n s p r ü c h e t9 Lumíneszenzstrahlung erzeugendes Bauelement mit großer Strahlungsausbeute, bei dem der die Lumineszenzstrahlung abgebende Körper mit Kunststoff, insbesondere aus Epoxydharz, oder mit anderem transparenten Material, insbesondere Glas, belegt ist, d a d u r c h g e k e n n z e i c h n e t , daß zur Erhöhung der Brechzahl dem Kunststoff (5) beziehungsweise anderem transparenten Material kleine Partikel (6) mit großer Brechzahl beigefügt sind.P a t -e n t a n s p r ü c h e t9 that generates luminescence radiation Component with high radiation yield in which the luminescent radiation emits Body with plastic, in particular made of epoxy resin, or with other transparent material Material, in particular glass, is covered so that it is not shown t that to increase the refractive index the plastic (5) or other transparent Material small particles (6) with a large refractive index are attached. 2. Bauelement nach Anspruch 1, d a d u r c h g e k e n n -z e i c h n e t , daß die Partikel (6) aus TiO2 bestehen. 2. The component according to claim 1, d a d u r c h g e k e n n -z e i c h n e t that the particles (6) consist of TiO2. 3. Bauelement nach Anspruch 1, d a d u r c h g e k e n n -z e i c h n e t , daß die Partikel (6) aus GaP bestehen. 3. The component according to claim 1, d a d u r c h g e k e n n -z e i c h n e t that the particles (6) consist of GaP. 4. Bauelement nach einem der Ansprüche 1 bis 3, d a d u r c h g e k e n n z e i c h n e t , daß die Partikel (6) einen Durchmesser aufweisen, der kleiner als 3 . 10 8 m ist. 4. Component according to one of claims 1 to 3, d a d u r c h g e it is not indicated that the particles (6) have a diameter that less than 3. 10 8 m is. 5. Bauelement nach Anspruch 4, d a d u r c h g e k e n n -z e i c h n e t , daß der Durchmesser kleiner als 1 . 10 8 m ist. 5. The component according to claim 4, d a d u r c h g e k e n n -z e i c n e t that the diameter is smaller than 1. 10 8 m is.
DE19762633191 1976-07-23 1976-07-23 Light emitting diodes with increased light yield - coated with plastic esp. epoxy! resin contg. particles of high refractive index such as titania or gallium phosphide Pending DE2633191A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19762633191 DE2633191A1 (en) 1976-07-23 1976-07-23 Light emitting diodes with increased light yield - coated with plastic esp. epoxy! resin contg. particles of high refractive index such as titania or gallium phosphide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762633191 DE2633191A1 (en) 1976-07-23 1976-07-23 Light emitting diodes with increased light yield - coated with plastic esp. epoxy! resin contg. particles of high refractive index such as titania or gallium phosphide

Publications (1)

Publication Number Publication Date
DE2633191A1 true DE2633191A1 (en) 1978-01-26

Family

ID=5983788

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19762633191 Pending DE2633191A1 (en) 1976-07-23 1976-07-23 Light emitting diodes with increased light yield - coated with plastic esp. epoxy! resin contg. particles of high refractive index such as titania or gallium phosphide

Country Status (1)

Country Link
DE (1) DE2633191A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4152618A (en) * 1977-04-05 1979-05-01 Tokyo Shibaura Electric Co., Ltd. Light-emitting display device including light diffusing film
WO2001041225A2 (en) * 1999-12-03 2001-06-07 Cree Lighting Company Enhanced light extraction in leds through the use of internal and external optical elements

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4152618A (en) * 1977-04-05 1979-05-01 Tokyo Shibaura Electric Co., Ltd. Light-emitting display device including light diffusing film
WO2001041225A2 (en) * 1999-12-03 2001-06-07 Cree Lighting Company Enhanced light extraction in leds through the use of internal and external optical elements
WO2001041225A3 (en) * 1999-12-03 2002-01-03 Cree Lighting Co Enhanced light extraction in leds through the use of internal and external optical elements
US6657236B1 (en) 1999-12-03 2003-12-02 Cree Lighting Company Enhanced light extraction in LEDs through the use of internal and external optical elements
US6821804B2 (en) 1999-12-03 2004-11-23 Cree, Inc. Enhanced light extraction in LEDs through the use of internal and external optical elements

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