DE2417288C2 - Kathodenzerstäubungsvorrichtung - Google Patents
KathodenzerstäubungsvorrichtungInfo
- Publication number
- DE2417288C2 DE2417288C2 DE2417288A DE2417288A DE2417288C2 DE 2417288 C2 DE2417288 C2 DE 2417288C2 DE 2417288 A DE2417288 A DE 2417288A DE 2417288 A DE2417288 A DE 2417288A DE 2417288 C2 DE2417288 C2 DE 2417288C2
- Authority
- DE
- Germany
- Prior art keywords
- cathode
- magnetic field
- substrate
- anode
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3441—Dark space shields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3458—Electromagnets in particular for cathodic sputtering apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3497—Temperature of target
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Physical Vapour Deposition (AREA)
Description
(DE-OS 21 17 421). 30 Das Ausführungsbeispiel nach Anspruch 9 bringt den
ladungsbereichen verwirklicht werden, um breite, sich N;.üb der Zeichnung ist die Kathodenzerstäubungssenkrecht zur Längserstreckung der Kathodenoberflä- 55 vorrichtung an einem Befestigungsflansch 21 angechen bewegende Substrate mit einem Minimum an bracht. Dieser weijt eine Dichtungsausnehnrjng 23 auf, Platzaufwand zu beschichten. Da die Entladungsver- die eine öffnung 25 im Befestigungsflansch umgibt. Der hältnisse weitgehend unabhängig von dem Ort auf der Flansch ist derart ausgebildet, daß er über einer geeig-Kathodenoberfläche sind, wo eine Entladung stattfindet, neten Öffnung Wi der Wand einer Zerstäubungskammer wird vorteilhafterweise trotz der großen Variations- 60 anbringbar ist, welche in der Zeichnung nicht dargestellt möglichkeiten bei der Gestaltung des Entladungsberei- ist. Eine Trägerhülse 27 erstreckt sich von dem Befestiches eine äußerst gleichmäßige Ablagerung erzielt gungsflansch 21 nach oben und endet in der einer Ka-
Claims (10)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/438,482 US4166018A (en) | 1974-01-31 | 1974-01-31 | Sputtering process and apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
DE2417288A1 DE2417288A1 (de) | 1975-08-14 |
DE2417288C2 true DE2417288C2 (de) | 1986-03-20 |
Family
ID=23740819
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE2463431A Expired DE2463431C2 (de) | 1974-01-31 | 1974-04-09 | |
DE2417288A Expired DE2417288C2 (de) | 1974-01-31 | 1974-04-09 | Kathodenzerstäubungsvorrichtung |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE2463431A Expired DE2463431C2 (de) | 1974-01-31 | 1974-04-09 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4166018A (de) |
JP (1) | JPS50109185A (de) |
DE (2) | DE2463431C2 (de) |
GB (1) | GB1453377A (de) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3636524A1 (de) * | 1986-10-27 | 1988-04-28 | Vtu Angel Kancev | Einrichtung zum auftragen von ueberzuegen im vakuum durch magnetronzerstaeubung |
EP0431253A2 (de) * | 1989-11-11 | 1991-06-12 | Leybold Aktiengesellschaft | Kathodenzerstäubungsvorrichtung |
DE4201551A1 (de) * | 1992-01-22 | 1993-07-29 | Leybold Ag | Zerstaeubungskathode |
DE4304581A1 (de) * | 1993-02-16 | 1994-08-18 | Leybold Ag | Vorrichtung zum Beschichten eines Substrats |
DE19622607A1 (de) * | 1996-06-05 | 1997-12-11 | Leybold Systems Gmbh | Sputterkathode |
DE4107711C2 (de) * | 1991-03-09 | 1999-11-11 | Leybold Ag | Verfahren und Vorrichtung zur Abscheidung dotierter Schichten oder chemischer Verbindungen oder Legierungen mittels einer Magnetronkathode |
DE4117518C2 (de) * | 1991-05-29 | 2000-06-21 | Leybold Ag | Vorrichtung zum Sputtern mit bewegtem, insbesondere rotierendem Target |
DE4106513C2 (de) * | 1991-03-01 | 2002-06-13 | Unaxis Deutschland Holding | Verfahren zur Regelung eines reaktiven Sputterprozesses und Vorrichtung zur Durchführung des Verfahrens |
DE102009018912A1 (de) | 2009-04-28 | 2010-11-18 | Leybold Optics Gmbh | Verfahren zur Erzeugung eines Plasmastrahls sowie Plasmaquelle |
WO2013045111A1 (de) | 2011-09-28 | 2013-04-04 | Leybold Optics Gmbh | Verfahren und vorrichtung zur erzeugung einer reflektionsmindernden schicht auf einem substrat |
Families Citing this family (186)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3956093A (en) * | 1974-12-16 | 1976-05-11 | Airco, Inc. | Planar magnetron sputtering method and apparatus |
JPS51131482A (en) * | 1975-05-12 | 1976-11-15 | Anelva Corp | A sputtering apparatus |
JPS51137681A (en) * | 1975-05-23 | 1976-11-27 | Tokuda Seisakusho Ltd | Sputtering apparatus |
JPS557555Y2 (de) * | 1976-03-02 | 1980-02-20 | ||
NL7607473A (nl) * | 1976-07-07 | 1978-01-10 | Philips Nv | Verstuifinrichting en werkwijze voor het ver- stuiven met een dergelijke inrichting. |
DE3002194A1 (de) * | 1980-01-22 | 1981-07-23 | Berna AG Olten, Olten | Vorrichtung zur (teil) beschichtung eines substrates durch kathodenzerstaeubung, vefahren zur beschichtung und deren anwendung |
CH648690A5 (de) * | 1980-10-14 | 1985-03-29 | Balzers Hochvakuum | Kathodenanordnung zur abstaeubung von material von einem target in einer kathodenzerstaeubungsanlage. |
US4395323A (en) * | 1981-04-17 | 1983-07-26 | Denton Vacuum Inc. | Apparatus for improving a sputtering process |
US4402998A (en) * | 1982-01-04 | 1983-09-06 | Western Electric Co., Inc. | Method for providing an adherent electroless metal coating on an epoxy surface |
US4444848A (en) * | 1982-01-04 | 1984-04-24 | Western Electric Co., Inc. | Adherent metal coatings on rubber-modified epoxy resin surfaces |
US4582564A (en) * | 1982-01-04 | 1986-04-15 | At&T Technologies, Inc. | Method of providing an adherent metal coating on an epoxy surface |
CH646459A5 (de) * | 1982-03-22 | 1984-11-30 | Balzers Hochvakuum | Rechteckige targetplatte fuer kathodenzerstaeubungsanlagen. |
US4415427A (en) * | 1982-09-30 | 1983-11-15 | Gte Products Corporation | Thin film deposition by sputtering |
US4462884A (en) * | 1983-07-25 | 1984-07-31 | Ppg Industries, Inc. | Low reflectance, low emissivity sputtered film |
US4508789A (en) * | 1983-07-25 | 1985-04-02 | Ppg Industries, Inc. | Low reflectance, low emissivity sputtered film |
US4563400A (en) * | 1983-09-09 | 1986-01-07 | Ppg Industries, Inc. | Primer for metal films on nonmetallic substrates |
US4512863A (en) * | 1983-09-09 | 1985-04-23 | Ppg Industries, Inc. | Stainless steel primer for sputtered films |
US4594137A (en) * | 1983-09-09 | 1986-06-10 | Ppg Industries, Inc. | Stainless steel overcoat for sputtered films |
US4692389A (en) * | 1983-09-09 | 1987-09-08 | Ppg Industries, Inc. | Stainless steel overcoat for sputtered films |
US4466875A (en) * | 1983-11-30 | 1984-08-21 | Ppg Industries, Inc. | Auxiliary heater for magnetron sputtering |
US4512864A (en) * | 1983-11-30 | 1985-04-23 | Ppg Industries, Inc. | Low resistance indium oxide films |
US4478702A (en) * | 1984-01-17 | 1984-10-23 | Ppg Industries, Inc. | Anode for magnetic sputtering apparatus |
US4478700A (en) * | 1984-01-17 | 1984-10-23 | Ppg Industries, Inc. | Magnetic sputtering anode reconditioning |
US4710283A (en) * | 1984-01-30 | 1987-12-01 | Denton Vacuum Inc. | Cold cathode ion beam source |
US4622120A (en) * | 1984-01-31 | 1986-11-11 | Ppg Industries, Inc. | Sputtered indium oxide films |
US4948677A (en) * | 1984-01-31 | 1990-08-14 | Ppg Industries, Inc. | High transmittance, low emissivity article and method of preparation |
DE3413587A1 (de) * | 1984-04-11 | 1985-10-17 | Flachglas AG, 8510 Fürth | Verfahren zum herstellen der zinndioxid-interferenzschicht (en) insbesondere von waermereflektierend beschichteten glasscheiben durch reaktive magnetron-zerstaeubung, zinntarget zu seiner durchfuehrung sowie mit einer danach hergestellten zinndioxidschicht versehene waermereflektierende glasscheibe |
US4517070A (en) * | 1984-06-28 | 1985-05-14 | General Motors Corporation | Magnetron sputtering cathode assembly and magnet assembly therefor |
DE3427587A1 (de) * | 1984-07-26 | 1986-02-06 | Leybold-Heraeus GmbH, 5000 Köln | Zerstaeubungseinrichtung fuer katodenzerstaeubungsanlagen |
US5215639A (en) * | 1984-10-09 | 1993-06-01 | Genus, Inc. | Composite sputtering target structures and process for producing such structures |
US4610771A (en) * | 1984-10-29 | 1986-09-09 | Ppg Industries, Inc. | Sputtered films of metal alloy oxides and method of preparation thereof |
AU561315B2 (en) * | 1984-10-29 | 1987-05-07 | Ppg Industries Ohio, Inc. | Sputtering films of metal alloy oxide |
US4716086A (en) * | 1984-12-19 | 1987-12-29 | Ppg Industries, Inc. | Protective overcoat for low emissivity coated article |
CH664303A5 (de) * | 1985-04-03 | 1988-02-29 | Balzers Hochvakuum | Haltevorrichtung fuer targets fuer kathodenzerstaeubung. |
CH668565A5 (de) * | 1986-06-23 | 1989-01-13 | Balzers Hochvakuum | Verfahren und anordnung zum zerstaeuben eines materials mittels hochfrequenz. |
US5270517A (en) * | 1986-12-29 | 1993-12-14 | Ppg Industries, Inc. | Method for fabricating an electrically heatable coated transparency |
US4806220A (en) * | 1986-12-29 | 1989-02-21 | Ppg Industries, Inc. | Method of making low emissivity film for high temperature processing |
US4898790A (en) * | 1986-12-29 | 1990-02-06 | Ppg Industries, Inc. | Low emissivity film for high temperature processing |
US5059295A (en) * | 1986-12-29 | 1991-10-22 | Ppg Industries, Inc. | Method of making low emissivity window |
US4806221A (en) * | 1987-03-26 | 1989-02-21 | Ppg Industries, Inc. | Sputtered films of bismuth/tin oxide |
US5178966A (en) * | 1987-03-26 | 1993-01-12 | Ppg Industries, Inc. | Composite with sputtered films of bismuth/tin oxide |
ATE65265T1 (de) * | 1987-08-26 | 1991-08-15 | Balzers Hochvakuum | Verfahren zur aufbringung von schichten auf substraten und vakuumbeschichtungsanlage zur durchfuehrung des verfahrens. |
US4885070A (en) * | 1988-02-12 | 1989-12-05 | Leybold Aktiengesellschaft | Method and apparatus for the application of materials |
US4840702A (en) * | 1987-12-29 | 1989-06-20 | Action Technologies, Inc. | Apparatus and method for plasma treating of circuit boards |
US5618388A (en) * | 1988-02-08 | 1997-04-08 | Optical Coating Laboratory, Inc. | Geometries and configurations for magnetron sputtering apparatus |
US4834857A (en) * | 1988-04-01 | 1989-05-30 | Ppg Industries, Inc. | Neutral sputtered films of metal alloy oxides |
US4902580A (en) * | 1988-04-01 | 1990-02-20 | Ppg Industries, Inc. | Neutral reflecting coated articles with sputtered multilayer films of metal oxides |
US5902505A (en) * | 1988-04-04 | 1999-05-11 | Ppg Industries, Inc. | Heat load reduction windshield |
US4898789A (en) * | 1988-04-04 | 1990-02-06 | Ppg Industries, Inc. | Low emissivity film for automotive heat load reduction |
US4911810A (en) * | 1988-06-21 | 1990-03-27 | Brown University | Modular sputtering apparatus |
US4865708A (en) * | 1988-11-14 | 1989-09-12 | Vac-Tec Systems, Inc. | Magnetron sputtering cathode |
US4892633A (en) * | 1988-11-14 | 1990-01-09 | Vac-Tec Systems, Inc. | Magnetron sputtering cathode |
US4957605A (en) * | 1989-04-17 | 1990-09-18 | Materials Research Corporation | Method and apparatus for sputter coating stepped wafers |
US4988424A (en) * | 1989-06-07 | 1991-01-29 | Ppg Industries, Inc. | Mask and method for making gradient sputtered coatings |
US5234560A (en) * | 1989-08-14 | 1993-08-10 | Hauzer Holdings Bv | Method and device for sputtering of films |
US5047131A (en) * | 1989-11-08 | 1991-09-10 | The Boc Group, Inc. | Method for coating substrates with silicon based compounds |
US5073245A (en) * | 1990-07-10 | 1991-12-17 | Hedgcoth Virgle L | Slotted cylindrical hollow cathode/magnetron sputtering device |
US5437778A (en) * | 1990-07-10 | 1995-08-01 | Telic Technologies Corporation | Slotted cylindrical hollow cathode/magnetron sputtering device |
DE4022708A1 (de) * | 1990-07-17 | 1992-04-02 | Balzers Hochvakuum | Aetz- oder beschichtungsanlagen |
DE4042417C2 (de) * | 1990-07-17 | 1993-11-25 | Balzers Hochvakuum | Ätz- oder Beschichtungsanlage sowie Verfahren zu ihrem Zünden oder intermittierenden Betreiben |
US5200049A (en) * | 1990-08-10 | 1993-04-06 | Viratec Thin Films, Inc. | Cantilever mount for rotating cylindrical magnetrons |
CA2089149C (en) * | 1990-08-10 | 2002-11-26 | Eric R. Dickey | Shielding for arc suppression in rotating magnetron sputtering systems |
US5100527A (en) * | 1990-10-18 | 1992-03-31 | Viratec Thin Films, Inc. | Rotating magnetron incorporating a removable cathode |
US5106474A (en) * | 1990-11-21 | 1992-04-21 | Viratec Thin Films, Inc. | Anode structures for magnetron sputtering apparatus |
US5171415A (en) * | 1990-12-21 | 1992-12-15 | Novellus Systems, Inc. | Cooling method and apparatus for magnetron sputtering |
WO1992018663A1 (en) * | 1991-04-19 | 1992-10-29 | Surface Solutions, Incorporated | Method and apparatus for linear magnetron sputtering |
DE69208721T2 (de) | 1991-04-30 | 1996-10-10 | Saint Gobain Vitrage | Glassubstrat beschichtet mit dünnen Merhschichten für Sonnenschütz |
US5229194A (en) * | 1991-12-09 | 1993-07-20 | Guardian Industries Corp. | Heat treatable sputter-coated glass systems |
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US5248402A (en) * | 1992-07-29 | 1993-09-28 | Cvc Products, Inc. | Apple-shaped magnetron for sputtering system |
FR2695117B1 (fr) * | 1992-08-28 | 1994-12-02 | Saint Gobain Vitrage Int | Procédé de traitement de couches minces à propriétés de conduction électrique et/ou de réflexion dans l'infra-rouge. |
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DE3636524A1 (de) * | 1986-10-27 | 1988-04-28 | Vtu Angel Kancev | Einrichtung zum auftragen von ueberzuegen im vakuum durch magnetronzerstaeubung |
EP0431253A2 (de) * | 1989-11-11 | 1991-06-12 | Leybold Aktiengesellschaft | Kathodenzerstäubungsvorrichtung |
EP0431253A3 (en) * | 1989-11-11 | 1991-10-16 | Leybold Aktiengesellschaft | Cathodic sputtering device |
DE4106513C2 (de) * | 1991-03-01 | 2002-06-13 | Unaxis Deutschland Holding | Verfahren zur Regelung eines reaktiven Sputterprozesses und Vorrichtung zur Durchführung des Verfahrens |
DE4107711C2 (de) * | 1991-03-09 | 1999-11-11 | Leybold Ag | Verfahren und Vorrichtung zur Abscheidung dotierter Schichten oder chemischer Verbindungen oder Legierungen mittels einer Magnetronkathode |
DE4117518C2 (de) * | 1991-05-29 | 2000-06-21 | Leybold Ag | Vorrichtung zum Sputtern mit bewegtem, insbesondere rotierendem Target |
DE4201551A1 (de) * | 1992-01-22 | 1993-07-29 | Leybold Ag | Zerstaeubungskathode |
DE4304581A1 (de) * | 1993-02-16 | 1994-08-18 | Leybold Ag | Vorrichtung zum Beschichten eines Substrats |
DE19622607A1 (de) * | 1996-06-05 | 1997-12-11 | Leybold Systems Gmbh | Sputterkathode |
DE19622607B4 (de) * | 1996-06-05 | 2007-12-27 | Oerlikon Deutschland Holding Gmbh | Sputterkathode |
DE102009018912A1 (de) | 2009-04-28 | 2010-11-18 | Leybold Optics Gmbh | Verfahren zur Erzeugung eines Plasmastrahls sowie Plasmaquelle |
WO2013045111A1 (de) | 2011-09-28 | 2013-04-04 | Leybold Optics Gmbh | Verfahren und vorrichtung zur erzeugung einer reflektionsmindernden schicht auf einem substrat |
Also Published As
Publication number | Publication date |
---|---|
US4166018A (en) | 1979-08-28 |
GB1453377A (en) | 1976-10-20 |
DE2417288A1 (de) | 1975-08-14 |
JPS50109185A (de) | 1975-08-28 |
DE2463431C2 (de) | 1988-06-01 |
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