DE19851703A1 - Electronic structure, e.g. FET, is produced by plotting, spraying, spin coating or spreading of insulating, semiconducting and-or conductive layers onto a substrate - Google Patents

Electronic structure, e.g. FET, is produced by plotting, spraying, spin coating or spreading of insulating, semiconducting and-or conductive layers onto a substrate

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Publication number
DE19851703A1
DE19851703A1 DE19851703A DE19851703A DE19851703A1 DE 19851703 A1 DE19851703 A1 DE 19851703A1 DE 19851703 A DE19851703 A DE 19851703A DE 19851703 A DE19851703 A DE 19851703A DE 19851703 A1 DE19851703 A1 DE 19851703A1
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DE
Germany
Prior art keywords
semiconducting
substrate
insulating
plotting
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19851703A
Other languages
German (de)
Inventor
Abbas Ourmazd
Gudrun Kissinger
Wolfgang Neumann
Burkhard Neumann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institut fur Halbleiterphysik Frankfurt (Oder) GmbH
Original Assignee
Institut fur Halbleiterphysik Frankfurt (Oder) GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institut fur Halbleiterphysik Frankfurt (Oder) GmbH filed Critical Institut fur Halbleiterphysik Frankfurt (Oder) GmbH
Priority to DE19851703A priority Critical patent/DE19851703A1/en
Publication of DE19851703A1 publication Critical patent/DE19851703A1/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

Abstract

Electronic structure production involves plotting, spraying, spin coating or spreading of insulating, semiconducting and/or conductive layers onto a substrate. An electronic structure production process comprises: (a) applying successive insulating, semiconducting and/or conductive layers corresponding to the structure to be produced by plotting, spraying, spin coating or spreading onto a substrate and hardening each applied layer by heat treating or drying; and (b) subjecting the resulting structure to sealing with an insulation layer, contacting and finishing. Preferred Features: At least one of the layers is applied by a plotter. The substrate may be rigid or flexible, especially a wafer, glass or foil substrate. The layers are applied using substances, especially polymers, in liquid, dissolved or suspended form.

Description

Die Erfindung bezieht sich auf ein Verfahren zur Herstellung von elektronischen Strukturen.The invention relates to a method for producing electronic structures.

Gegenüber herkömmlichen Verfahren zur Herstellung von elektronischen Strukturen, insbesondere integrierten Schaltungen, z. B. mittels Epitaxie-, Ätz- und Temperprozessen basierend auf Silizium-Wafern, ist die Anwendung der Drucktechnologie von Polymermaterialien erheblich schneller und kostengünstiger. Des weiteren ist diese Technologie vielseitiger einsetzbar, da die verwendeten Materialien nicht solch extremen Temperaturen und Drücken ausgesetzt ist wie beispielsweise bei Epitaxie- und Oxidationsverfahren.Compared to conventional processes for the production of electronic structures, in particular integrated circuits, e.g. B. by means of epitaxy, etching and annealing processes based on silicon wafers, is the application of the printing technology of Polymer materials significantly faster and cheaper. Furthermore, this is Technology more versatile because the materials used are not so extreme Exposed to temperatures and pressures such as epitaxial and Oxidation process.

Bisher wurden Polymere zur Herstellung von Schaltkreisstrukturen mittels Siebdruck auf Waferoberflächen gebracht. Dies hatte jedoch den Nachteil, daß die erzielten Schichtdicken für die Herstellung beispielsweise von Transistoren zu groß waren, um gute elektrische Eigenschaften zu erhalten.So far, polymers have been used to manufacture circuit structures using screen printing Brought wafer surfaces. However, this had the disadvantage that the layer thicknesses achieved for the manufacture of transistors, for example, were too large to have good electrical Get properties.

Weiterhin besteht die Möglichkeit, mit Hilfe von Tinten- oder Laserstrahldruckern Polymere auf Waferoberflächen aufzudrucken. Bisher ist es jedoch nicht möglich, strukturierte Schichten in mehreren übereinanderliegenden Ebenen aufzubringen. Dies scheitert an der fehlenden Justagemöglichkeit. Da mehrere Schichten nur aufgebracht werden können, wenn eine genügend große Trocknungszeit der einzelnen Schichten eingehalten wird, ist dies mit Tintenstrahl- oder Laserdruckern nicht möglich. Ist die Trocknungszeit zu gering, kommt es zur Vermischung der Schichten, was eine Unbrauchbarkeit der Struktur zur Folge hätte.There is also the possibility of using polymers using ink or laser beam printers to be printed on wafer surfaces. So far, however, it has not been possible to structured Apply layers in several superimposed levels. This fails because of the lack of adjustment possibility. Since several layers can only be applied if a sufficient drying time of the individual layers is observed, this is with  Inkjet or laser printers are not possible. If the drying time is too short, it happens to mix the layers, which would render the structure unusable.

Aufgabe der Erfindung ist es, ein Verfahren zur Herstellung von Schaltkreisstrukturen vorzuschlagen, bei dem die Nachteile des Standes der Technik beseitigt werden und insbesondere Polymere in Form von leitenden, halbleitenden und isolierenden Schichten strukturiert aufgebracht werden, wobei eine Justage der Ebenen möglich ist. Des weiteren ist es Aufgabe der Erfindung, daß das Verfahren derart gestaltet ist, daß Bauelemente und deren Verbindungen auf flexiblen Substraten aufgebracht werden können. Ein komplettes Aufbringen von Schaltkreislayouts in einer oder mehreren Ebenen soll durch erfindungsgemäßes Verfahren möglich sein. Weiterhin ist es Aufgabe der Erfindung, daß Schaltkreise und andere elektronische Bauelemente auch aus anderen Materialien als Silicium hergestellt werden können.The object of the invention is a method for producing circuit structures to propose in which the disadvantages of the prior art are eliminated and in particular polymers in the form of conductive, semiconducting and insulating layers be applied in a structured manner, adjustment of the levels being possible. Furthermore is it is an object of the invention that the method is designed such that components and their Connections can be applied to flexible substrates. A complete one Applying circuit layouts in one or more levels is intended to method according to the invention may be possible. Furthermore, it is an object of the invention that Circuits and other electronic components made of materials other than silicon can be produced.

Erfindungsgemäß wird diese Aufgabe gelöst, indem eine isolierende und/oder halbleitende und/oder leitfähige Schicht entsprechend der zu erzielenden elektronischen Struktur mittels Plotter auf ein Substrat aufgebracht wird. Als Substrate eignen sich sowohl feste als auch flexible Wafer, Glas, Folie oder ähnliche. Form, Größe und Dicke des Substrats spielen dabei eine untergeordnete Rolle. Die aufgebrachten Substanzen liegen dabei in flüssiger oder gelöster Form oder als Suspension vor. Insbesondere werden isolierende und/oder halbleitende und/oder leitfähige Polymere aufgebracht.According to the invention, this object is achieved by an insulating and / or semiconducting and / or conductive layer according to the electronic structure to be achieved by means of Plotter is applied to a substrate. Both solid and are suitable as substrates flexible wafers, glass, foil or similar. The shape, size and thickness of the substrate play a role a subordinate role. The substances applied are in liquid or dissolved form or as a suspension. In particular, isolating and / or semiconducting and / or conductive polymers applied.

Anschließend werden die aufgebrachten Substanzen durch Tempern oder Trocknen verfestigt. Nachfolgend werden, wahlweise mehrfach wiederholt, isolierende und/oder halbleitende und/oder leitfähige Schichten entsprechend der zu erzielenden elektronischen Struktur durch Plotten, Aufsprühen, Aufschleudern oder Aufstreichen aufgebracht und die jeweils aufgebrachte Schicht durch Tempern oder Trocknen verfestigt.The applied substances are then solidified by tempering or drying. Insulating and / or semiconducting are then repeated, optionally several times and / or conductive layers according to the electronic structure to be achieved  Plotting, spraying, spin coating or brushing applied and the each applied layer solidified by tempering or drying.

Abschließend wird die aufgebrachte elektronische Struktur mit einer isolierenden Schicht versiegelt und in üblicher Weise kontaktiert und komplettiert.Finally, the applied electronic structure with an insulating layer sealed and contacted and completed in the usual way.

Durch dieses Verfahren werden sowohl elektronische Bauelemente als auch die Verbindungen einzelner Bauelemente in integrierten Schaltungen hergestellt.With this method, both electronic components and the connections individual components in integrated circuits.

Die Merkmale der Erfindung gehen außer aus den Ansprüchen auch aus der Beschreibung und den Zeichnungen hervor. Ausführungsbeispiele der Erfindung werden im folgenden näher erläutert.The features of the invention go beyond the claims also from the description and the drawings. Embodiments of the invention are described in more detail below explained.

Die Zeichnungen zeigen:The drawings show:

Fig. 1 bis 3 schematische Darstellungen schaltungsfähiger Feldeffekttransistoren Figs. 1 to 3 are schematic representations circuit capable field effect transistors

Beispiel 1example 1

In diesem Ausführungsbeispiel wird die Herstellung eines schaltungsfähigen Feldeffekttransistors beschrieben.In this embodiment, the manufacture of a switchable Field effect transistor described.

Fig. 1 zeigt den schematischen Aufbau eines derartigen Transistors. Zuerst wird ein leitfähiges Polymer durch Plotten auf eine Waferoberfläche 1 aufgetragen und mittels Temperung verfestigt. Diese leitende Schicht stellt den Gate-Kontakt 2 des Feldeffekttransistors dar. Anschließend erfolgt das Plotten einer isolierenden Schicht 3 auf das verfestigte leitfähige Polymer. Auch die isolierende Schicht 3 wird mittels Temperung verfestigt. Danach erfolgt das Plotten einer halbleitenden Schicht 4 auf die verfestigte isolierende Schicht und anschließendes Verfestigen der halbleitenden Schicht mittels Temperprozeß. Nachfolgend wird eine Schicht eines leitfähigen Polymers durch Plotten aufgebracht und durch einen weiteren Temperprozeß verfestigt. Diese Schicht beinhaltet den Source-Kontakt 5 und den Drain-Kontakt 6. Fig. 1 shows the schematic structure of such a transistor. First, a conductive polymer is applied to a wafer surface 1 by plotting and solidified by tempering. This conductive layer represents the gate contact 2 of the field effect transistor. Subsequently, an insulating layer 3 is plotted on the solidified conductive polymer. The insulating layer 3 is also solidified by means of tempering. This is followed by plotting a semiconducting layer 4 on the solidified insulating layer and then solidifying the semiconducting layer by means of an annealing process. Subsequently, a layer of a conductive polymer is applied by plotting and solidified by a further annealing process. This layer contains the source contact 5 and the drain contact 6 .

Zuletzt wird die Struktur mit einer in der Figur nicht dargestellten isolierenden Schicht versiegelt und das Bauelement in üblicher Form kontaktiert.Finally, the structure with an insulating layer, not shown in the figure sealed and contacted the component in the usual form.

Beispiel 2Example 2

In diesem Ausführungsbeispiel wird ebenfalls die Herstellung eines schaltungsfähigen Feldeffekttransistors beschrieben.In this embodiment, the manufacture of a switchable Field effect transistor described.

Wie in Fig. 2 dargestellt, wird zuerst ein leitfähiges Polymer durch Plotten auf eine Waferoberfläche 1 aufgetragen und mittels Temperung verfestigt. Diese leitende Schicht stellt den Gate-Kontakt 2 des Feldeffekttransistors dar. Anschließend erfolgt das Plotten einer isolierenden Schicht 3 auf das verfestigte leitfähige Polymer. Auch die isolierende Schicht 3 wird mittels Temperung verfestigt. Nachfolgend wird eine Schicht eines leitfähigen Polymers durch Plotten aufgebracht und durch einen weiteren Temperprozeß verfestigt. Diese Schicht beinhaltet den Source-Kontakt 5 und den Drain-Kontakt 6.As shown in FIG. 2, a conductive polymer is first applied to a wafer surface 1 by plotting and solidified by means of tempering. This conductive layer represents the gate contact 2 of the field effect transistor. Subsequently, an insulating layer 3 is plotted on the solidified conductive polymer. The insulating layer 3 is also solidified by means of tempering. Subsequently, a layer of a conductive polymer is applied by plotting and solidified by a further annealing process. This layer contains the source contact 5 and the drain contact 6 .

Danach erfolgt das Plotten einer halbleitenden Schicht 4 auf die verfestigte isolierende Schicht 3 und auf die den Source-Kontakt 5 und den Drain-Kontakt 6 beinhaltende Schicht eines leitfähigen Polymers und anschließendes Verfestigen der halbleitenden Schicht 4 mittels Temperprozeß.This is followed by plotting a semiconducting layer 4 on the solidified insulating layer 3 and on the layer of a conductive polymer containing the source contact 5 and the drain contact 6 , and then solidifying the semiconducting layer 4 by means of an annealing process.

Zuletzt wird die Struktur mit einer in der Figur nicht dargestellten isolierenden Schicht versiegelt und das Bauelement in üblicher Weise komplettiert. Finally, the structure with an insulating layer, not shown in the figure sealed and the component completed in the usual way.  

Beispiel 3Example 3

Fig. 3 zeigt schematisch den Aufbau eines weiteren schaltungsfähigen Feldeffekttransistors. Zuerst wird ein leitfähiges Polymer durch Plotten auf eine Waferoberfläche 1 aufgetragen und mittels Temperung verfestigt. Diese Schicht beinhaltet den Source-Kontakt 5 und den Drain- Kontakt 6. Danach erfolgt das Plotten einer halbleitenden Schicht 4 auf die verfestigte leitfähige Polymer-Schicht und auf die Waferoberfläche 1 und anschließendes Verfestigen der halbleitenden Schicht 4 mittels Temperprozeß. Fig. 3 shows schematically the structure of a further switchable field effect transistor. First, a conductive polymer is applied to a wafer surface 1 by plotting and solidified by tempering. This layer contains the source contact 5 and the drain contact 6 . This is followed by plotting a semiconducting layer 4 on the solidified conductive polymer layer and on the wafer surface 1 and then solidifying the semiconducting layer 4 by means of an annealing process.

Danach erfolgt das Plotten einer isolierenden Schicht 3. Auch die isolierende Schicht 3 wird mittels Temperung verfestigt.Then an insulating layer 3 is plotted. The insulating layer 3 is also solidified by means of tempering.

Nachfolgend wird eine Schicht eines leitfähigen Polymers durch Plotten aufgebracht und durch einen weiteren Temperprozeß verfestigt. Diese leitende Schicht stellt den Gate- Kontakt 2 des Feldeffekttransistors dar.Subsequently, a layer of a conductive polymer is applied by plotting and solidified by a further annealing process. This conductive layer represents the gate contact 2 of the field effect transistor.

Zuletzt wird die Struktur mit einer isolierenden Schicht versiegelt und das Bauelement in üblicher Weise kontaktiert und komplettiert.Finally, the structure is sealed with an insulating layer and the component in contacted and completed in the usual way.

In der vorliegenden Erfindung wurde anhand konkreter Ausführungsbeispiele ein Verfahren zur Herstellung von elektronischen Strukturen erläutert. Es sei aber vermerkt, daß die vorliegende Erfindung nicht auf die Einzelheiten der Beschreibung in den Ausführungsbeispielen eingeschränkt ist, da im Rahmen der Patentansprüche Änderungen und Abwandlungen beansprucht werden.In the present invention, a method was based on specific exemplary embodiments for the production of electronic structures explained. However, it should be noted that the present invention does not refer to the details of the description in the Embodiments is limited because changes and within the scope of the claims Variations are claimed.

Claims (6)

1. Verfahren zur Herstellung von elektronischen Strukturen, dadurch gekennzeichnet, daß
  • 1. isolierende und/oder halbleitende und/oder leitfähige Schichten nacheinander wahlweise ein- oder mehrfach entsprechend der zu erzielenden elektronischen Struktur durch Plotten, Aufsprühen, Aufschleudern oder Aufstreichen auf ein Substrat aufgebracht und die jeweils aufgebrachte Schicht durch Tempern oder Trocknen verfestigt wird und
  • 2. abschließend die aufgebrachte elektronische Struktur mit einer isolierenden Schicht, versiegelt sowie kontaktiert und komplettiert wird.
1. A method for producing electronic structures, characterized in that
  • 1.insulating and / or semiconducting and / or conductive layers successively optionally one or more times according to the electronic structure to be achieved by plotting, spraying, spin coating or brushing onto a substrate and the respectively applied layer is solidified by tempering or drying and
  • 2. finally the applied electronic structure is sealed, sealed, contacted and completed with an insulating layer.
2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß mindestens eine Schicht mittels Plotter aufgebracht wird.2. The method according to claim 1, characterized in that at least one layer is applied by means of a plotter. 3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß als Substrat sowohl feste, als auch flexible Substrate, insbesondere Wafer, Glas oder Folie, Verwendung finden. 3. The method according to claim 1 or 2, characterized in that both as a substrate solid as well as flexible substrates, in particular wafers, glass or foil, use Find.   4. Verfahren nach einem oder mehreren der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß als Schichten aufgebrachte Substanzen in flüssiger oder gelöster Form oder als Suspension aufgetragen werden.4. The method according to one or more of the preceding claims, characterized characterized in that substances applied as layers in liquid or dissolved Form or as a suspension can be applied. 5. Verfahren nach einem oder mehreren der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß als Schichten isolierende und/oder halbleitende und/oder leitfähige Polymere aufgetragen werden.5. The method according to one or more of the preceding claims, characterized characterized in that the layers are insulating and / or semiconducting and / or conductive Polymers are applied. 6. Verfahren nach einem oder mehreren der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß elektronische Bauelemente und/oder Verbindungen einzelner Bauelemente in integrierten Schaltungen hergestellt werden.6. The method according to one or more of the preceding claims, characterized characterized in that electronic components and / or connections of individual Components are manufactured in integrated circuits.
DE19851703A 1998-10-30 1998-10-30 Electronic structure, e.g. FET, is produced by plotting, spraying, spin coating or spreading of insulating, semiconducting and-or conductive layers onto a substrate Withdrawn DE19851703A1 (en)

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DE19851703A DE19851703A1 (en) 1998-10-30 1998-10-30 Electronic structure, e.g. FET, is produced by plotting, spraying, spin coating or spreading of insulating, semiconducting and-or conductive layers onto a substrate

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