DE19849919A1 - Active semiconductor module - Google Patents
Active semiconductor moduleInfo
- Publication number
- DE19849919A1 DE19849919A1 DE19849919A DE19849919A DE19849919A1 DE 19849919 A1 DE19849919 A1 DE 19849919A1 DE 19849919 A DE19849919 A DE 19849919A DE 19849919 A DE19849919 A DE 19849919A DE 19849919 A1 DE19849919 A1 DE 19849919A1
- Authority
- DE
- Germany
- Prior art keywords
- base plate
- ceramic substrate
- semiconductor module
- module
- active semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
Die Erfindung bezieht sich auf ein Leistungshalbleiter modul mit mindestens einem Halbleiterbauelement, das auf einem metallisierten, elektrisch isolierenden Keramik substrat befestigt ist, und mit einer Basisplatte, die zumindest ein Wärmerohr aufweist.The invention relates to a power semiconductor module with at least one semiconductor component based on a metallized, electrically insulating ceramic substrate is attached, and with a base plate, the has at least one heat pipe.
Die im Halbleiterbauelement entstehende Verlustwärme begrenzt in der Regel die elektrischen Parameter, insbe sondere die Schaltfrequenz. Vor allem in Anbetracht der mit modernen Halbleiterbauelementen erreichbaren Lei stungsdichten werden Technologien zur Kühlung realisiert, die insbesondere auf dem Einsatz von Wärmerohren (heat pipes) beruhen.The heat loss generated in the semiconductor component usually limits the electrical parameters, esp special the switching frequency. Especially considering the Lei achievable with modern semiconductor components technologies for cooling are realized, which are particularly based on the use of heat pipes (heat pipes).
Bei einem zum Stand der Technik gehörenden Leistungs halbleitermodul mit den eingangs genannten Gattungsmerk malen ist das mit dem Halbleiterbauelement versehene Keramiksubstrat durch Löten mit einer Trägerplatte (Zwischen-Basisplatte) verbunden, die ihrerseits über Schrauben an der das Wärmerohr aufweisenden Basisplatte des gesamten Kühlkörpers befestigt ist. Bei dieser Bauweise wird als nachteilig angesehen, daß die Träger platte und die Basisplatte zum Erzeugen der erforder lichen ebenen Kontaktflächen mechanisch bearbeitet werden müssen; zusätzlich ist es notwendig, zwischen den Kon taktflächen der beiden vorgenannten Platten Wärmeleitpa ste einzusetzen. With a performance belonging to the state of the art semiconductor module with the generic type mentioned painting is that provided with the semiconductor component Ceramic substrate by soldering with a carrier plate (Intermediate base plate) connected, which in turn via Screws on the base plate containing the heat pipe of the entire heat sink is attached. At this Construction is considered disadvantageous that the carrier plate and the base plate to produce the required planar contact surfaces are machined mechanically have to; in addition, it is necessary to distinguish between the con tact surfaces of the two aforementioned plates ste use.
Durch die DE-OS 35 04 992 ist ein Leistungshalbleitermo dul mit zumindest einem Wärmerohr bekannt, das auf der dem Halbleiterbauelement zugewandten Seite im Substrat integriert ist. Die Nachteile eines solchen Moduls liegen in dem erheblichen Fertigungsaufwand und der begrenzten Wärmeabfuhr.DE-OS 35 04 992 is a power semiconductor mo dul with at least one heat pipe known on the the side facing the semiconductor component in the substrate is integrated. The disadvantages of such a module lie in the considerable manufacturing effort and the limited Heat dissipation.
Der Erfindung liegt die Aufgabe zugrunde, ein Leistungs halbleitermodul im Hinblick auf eine möglichst hohe Verlustleistungsabfuhr und eine einfache, kostengünstige Fertigung auszubilden.The invention has for its object a performance semiconductor module with a view to the highest possible Power dissipation and a simple, inexpensive Train manufacturing.
Diese Aufgabe wird erfindungsgemäß dadurch gelöst, daß das Keramiksubstrat direkt auf die Basisplatte gelötet ist.This object is achieved in that the ceramic substrate is soldered directly onto the base plate is.
Das direkte Auflöten des Keramiksubstrats auf die Basis platte ermöglicht vorteilhaft die Anwendung von Stan dardbauteilen und damit eine besonders kostengünstige Fertigung des Leistungshalbleitermoduls. Durch das besagte direkte Auflöten, bei dem eine früher übliche Trägerplatte (Zwischen-Basisplatte) entfällt, verringert sich außerdem günstig der thermische Übergangswiderstand innerhalb des Moduls, so daß eine höhere, forcierte Abfuhr von Verlustleistung erreicht wird.The direct soldering of the ceramic substrate onto the base plate advantageously allows the use of Stan standard components and thus a particularly cost-effective one Production of the power semiconductor module. By the said direct soldering, in which a previously common Carrier plate (intermediate base plate) omitted, reduced the thermal contact resistance is also favorable inside the module so that a higher, forced Power dissipation is achieved.
Gemäß dem in der Zeichnung schematisch und als Ausschnitt dargestellten Ausführungsbeispiel eines Leistungshalb leitermoduls nach der Erfindung ist ein Leistungshalb leiter-Bauelement 1 durch Löten (Lotschicht 5) mit einem elektrisch isolierenden Keramiksubstrat 2 verbunden, das auf jeder Seite eine Kupferschicht 6 aufweist. Die Kupferschichten 6 können zum besseren Löten vernickelt sein. Um die thermische Ausdehnung zu begrenzen, besteht die Möglichkeit, hier nicht gezeigte Molybdänzwischen scheiben einzusetzen, die allerdings nicht zwingend sind. Die Dicke des Keramiksubstrats 2 kann den geforderten elektrischen Parametern frei angepaßt werden, beispiels weise zum Erzielen sehr hoher Isolationswerte des Halb leiterbauelements 1 gegenüber dem Bezugspotential einer Basisplatte 3.According to the embodiment of a power semiconductor module according to the invention, shown schematically and as a detail in the drawing, a power semiconductor component 1 is connected by soldering (solder layer 5 ) to an electrically insulating ceramic substrate 2 which has a copper layer 6 on each side. The copper layers 6 can be nickel-plated for better soldering. In order to limit the thermal expansion, it is possible to use molybdenum washers, not shown here, but these are not mandatory. The thickness of the ceramic substrate 2 can be freely adapted to the required electrical parameters, for example to achieve very high insulation values of the semiconductor component 1 with respect to the reference potential of a base plate 3 .
Das Keramiksubstrat 2 ist über seine untere Kupferschicht 6 direkt auf die Basisplatte 3 gelötet (Lotschicht 7), in die ein Wärmerohr 4 eingelassen ist. Es können Wärmerohre 4 mit oder ohne Kapillarstruktur verwendet werden. Die Anzahl der Wärmerohre 4 sowie deren Größe und die Anzahl der Kühlrippen sind dem jeweiligen Anwendungsfall ent sprechend auszuwählen. Nach dem Auflöten des Keramiksub strats 2 werden die Wärmerohre 4 mit einer für den Anwendungsfall geeigneten Flüssigkeit gefüllt und mittels üblicher Technologien verschlossen.The ceramic substrate 2 is soldered directly via its lower copper layer 6 onto the base plate 3 (solder layer 7 ), into which a heat pipe 4 is embedded. Heat pipes 4 with or without a capillary structure can be used. The number of heat pipes 4 , their size and the number of cooling fins are to be selected accordingly for the respective application. After soldering the ceramic substrate 2 , the heat pipes 4 are filled with a liquid suitable for the application and sealed using conventional technologies.
11
Leistungshalbleiter-Bauelement
Power semiconductor component
22nd
Keramiksubstrat
Ceramic substrate
33rd
Basisplatte
Base plate
44th
Wärmerohr
Heat pipe
55
Lotschicht
Solder layer
66
Kupferschicht
Copper layer
77
Lotschicht
Solder layer
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19849919A DE19849919A1 (en) | 1997-11-07 | 1998-10-29 | Active semiconductor module |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE29719778U DE29719778U1 (en) | 1997-11-07 | 1997-11-07 | Power semiconductor module |
DE19849919A DE19849919A1 (en) | 1997-11-07 | 1998-10-29 | Active semiconductor module |
Publications (1)
Publication Number | Publication Date |
---|---|
DE19849919A1 true DE19849919A1 (en) | 1999-05-12 |
Family
ID=8048308
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE29719778U Expired - Lifetime DE29719778U1 (en) | 1997-11-07 | 1997-11-07 | Power semiconductor module |
DE19849919A Withdrawn DE19849919A1 (en) | 1997-11-07 | 1998-10-29 | Active semiconductor module |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE29719778U Expired - Lifetime DE29719778U1 (en) | 1997-11-07 | 1997-11-07 | Power semiconductor module |
Country Status (1)
Country | Link |
---|---|
DE (2) | DE29719778U1 (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001003484A1 (en) * | 1999-07-01 | 2001-01-11 | Nokia Corporation | Method of installing heat source, and micro heat pipe module |
DE10137748A1 (en) * | 2001-08-01 | 2003-02-13 | Conti Temic Microelectronic | Cooling system for heat-generating semiconductor component e.g. for vehicle brake control system, has hollow heat pipe extending between component and heat sink body |
US6981322B2 (en) | 1999-06-08 | 2006-01-03 | Thermotek, Inc. | Cooling apparatus having low profile extrusion and method of manufacture therefor |
US6988315B2 (en) | 1998-06-08 | 2006-01-24 | Thermotek, Inc. | Cooling apparatus having low profile extrusion and method of manufacture therefor |
US7150312B2 (en) | 2001-11-27 | 2006-12-19 | Thermotek, Inc. | Stacked low profile cooling system and method for making same |
US7857037B2 (en) | 2001-11-27 | 2010-12-28 | Thermotek, Inc. | Geometrically reoriented low-profile phase plane heat pipes |
US9113577B2 (en) | 2001-11-27 | 2015-08-18 | Thermotek, Inc. | Method and system for automotive battery cooling |
-
1997
- 1997-11-07 DE DE29719778U patent/DE29719778U1/en not_active Expired - Lifetime
-
1998
- 1998-10-29 DE DE19849919A patent/DE19849919A1/en not_active Withdrawn
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7686069B2 (en) | 1998-06-08 | 2010-03-30 | Thermotek, Inc. | Cooling apparatus having low profile extrusion and method of manufacture therefor |
US6988315B2 (en) | 1998-06-08 | 2006-01-24 | Thermotek, Inc. | Cooling apparatus having low profile extrusion and method of manufacture therefor |
US7322400B2 (en) | 1998-06-08 | 2008-01-29 | Thermotek, Inc. | Cooling apparatus having low profile extrusion |
US7802436B2 (en) | 1998-06-08 | 2010-09-28 | Thermotek, Inc. | Cooling apparatus having low profile extrusion and method of manufacture therefor |
US8418478B2 (en) | 1998-06-08 | 2013-04-16 | Thermotek, Inc. | Cooling apparatus having low profile extrusion and method of manufacture therefor |
US6981322B2 (en) | 1999-06-08 | 2006-01-03 | Thermotek, Inc. | Cooling apparatus having low profile extrusion and method of manufacture therefor |
WO2001003484A1 (en) * | 1999-07-01 | 2001-01-11 | Nokia Corporation | Method of installing heat source, and micro heat pipe module |
DE10137748A1 (en) * | 2001-08-01 | 2003-02-13 | Conti Temic Microelectronic | Cooling system for heat-generating semiconductor component e.g. for vehicle brake control system, has hollow heat pipe extending between component and heat sink body |
US7150312B2 (en) | 2001-11-27 | 2006-12-19 | Thermotek, Inc. | Stacked low profile cooling system and method for making same |
US7857037B2 (en) | 2001-11-27 | 2010-12-28 | Thermotek, Inc. | Geometrically reoriented low-profile phase plane heat pipes |
US8621875B2 (en) | 2001-11-27 | 2014-01-07 | Thermotek, Inc. | Method of removing heat utilizing geometrically reoriented low-profile phase plane heat pipes |
US9113577B2 (en) | 2001-11-27 | 2015-08-18 | Thermotek, Inc. | Method and system for automotive battery cooling |
US9877409B2 (en) | 2001-11-27 | 2018-01-23 | Thermotek, Inc. | Method for automotive battery cooling |
Also Published As
Publication number | Publication date |
---|---|
DE29719778U1 (en) | 1999-04-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OR8 | Request for search as to paragraph 43 lit. 1 sentence 1 patent law | ||
8105 | Search report available | ||
8127 | New person/name/address of the applicant |
Owner name: SIEMENS DUEWAG SCHIENENFAHRZEUGE GMBH, 47829 KREFE |
|
8127 | New person/name/address of the applicant |
Owner name: SIEMENS AG, 80333 MUENCHEN, DE |
|
8110 | Request for examination paragraph 44 | ||
8130 | Withdrawal |