DE112005001384T5 - II-VI/III-V-Schichtenaufbau auf InP-Träger - Google Patents
II-VI/III-V-Schichtenaufbau auf InP-Träger Download PDFInfo
- Publication number
- DE112005001384T5 DE112005001384T5 DE112005001384T DE112005001384T DE112005001384T5 DE 112005001384 T5 DE112005001384 T5 DE 112005001384T5 DE 112005001384 T DE112005001384 T DE 112005001384T DE 112005001384 T DE112005001384 T DE 112005001384T DE 112005001384 T5 DE112005001384 T5 DE 112005001384T5
- Authority
- DE
- Germany
- Prior art keywords
- iii
- layer construction
- inp carrier
- inp
- carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000010276 construction Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/871,424 US7126160B2 (en) | 2004-06-18 | 2004-06-18 | II-VI/III-V layered construction on InP substrate |
PCT/US2005/015009 WO2006007032A1 (en) | 2004-06-18 | 2005-04-29 | Ii-vi/iii-v layered construction on inp substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
DE112005001384T5 true DE112005001384T5 (de) | 2007-05-16 |
Family
ID=34972045
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE112005001384T Withdrawn DE112005001384T5 (de) | 2004-06-18 | 2005-04-29 | II-VI/III-V-Schichtenaufbau auf InP-Träger |
Country Status (8)
Country | Link |
---|---|
US (1) | US7126160B2 (de) |
JP (1) | JP2008503090A (de) |
KR (1) | KR101227293B1 (de) |
CN (1) | CN100479279C (de) |
DE (1) | DE112005001384T5 (de) |
GB (1) | GB2430552B (de) |
TW (1) | TW200618429A (de) |
WO (1) | WO2006007032A1 (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7719015B2 (en) * | 2004-12-09 | 2010-05-18 | 3M Innovative Properties Company | Type II broadband or polychromatic LED's |
US7402831B2 (en) * | 2004-12-09 | 2008-07-22 | 3M Innovative Properties Company | Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission |
US7745814B2 (en) * | 2004-12-09 | 2010-06-29 | 3M Innovative Properties Company | Polychromatic LED's and related semiconductor devices |
JP2006245341A (ja) * | 2005-03-03 | 2006-09-14 | Mitsubishi Electric Corp | 半導体光素子 |
DE102006010727B4 (de) * | 2005-12-05 | 2019-10-24 | Osram Opto Semiconductors Gmbh | Oberflächenemittierendes Halbleiterbauelement mit einem Tunnelübergang |
KR100794673B1 (ko) | 2005-12-06 | 2008-01-14 | 한국전자통신연구원 | 수직 공진 표면 발광 레이저 다이오드의 dbr 구조물 및그 제조방법과 수직 공진 표면 발광 레이저 다이오드 |
US20080067370A1 (en) * | 2006-07-01 | 2008-03-20 | Mccaffrey John Patrick | Electron microscope and scanning probe microscope calibration device |
CN100492670C (zh) * | 2007-06-08 | 2009-05-27 | 中国科学院上海微系统与信息技术研究所 | 波长扩展InGaAs探测器及阵列宽带缓冲层和窗口层及制作方法 |
MX2010003226A (es) * | 2007-09-25 | 2010-04-07 | First Solar Inc | Dispositivos fotovoltaicos que incluyen heterouniones. |
CN101614843B (zh) * | 2008-06-25 | 2010-12-08 | 中国科学院半导体研究所 | 倏逝波耦合型单一载流子行波光电探测器的制作方法 |
EP2211431A1 (de) * | 2009-01-22 | 2010-07-28 | Universität Bremen | Bragg-Spiegel mit Übergitter zur Kompensation einer Gitterfehlanpassung |
US8994071B2 (en) | 2009-05-05 | 2015-03-31 | 3M Innovative Properties Company | Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms |
WO2010129412A1 (en) | 2009-05-05 | 2010-11-11 | 3M Innovative Properties Company | Re-emitting semiconductor construction with enhanced extraction efficiency |
EP2427924A1 (de) | 2009-05-05 | 2012-03-14 | 3M Innovative Properties Company | Reemittierende halbleiterträgeranordnungen zur verwendung mit leds und herstellungsverfahren |
EP2449856A1 (de) | 2009-06-30 | 2012-05-09 | 3M Innovative Properties Company | Elektrolumineszente weisslichtelemente mit einstellbarer farbtemperatur |
CN102473817A (zh) | 2009-06-30 | 2012-05-23 | 3M创新有限公司 | 无镉再发光半导体构造 |
WO2011008474A1 (en) | 2009-06-30 | 2011-01-20 | 3M Innovative Properties Company | Electroluminescent devices with color adjustment based on current crowding |
SE534345C2 (sv) * | 2009-09-24 | 2011-07-19 | Svedice Ab | Fotodiod av typen lavinfotodiod. |
CN101811659B (zh) * | 2010-03-19 | 2013-08-28 | 中国科学院上海微系统与信息技术研究所 | 基于数字合金的非矩形量子结构及其实现方法 |
WO2012161067A1 (ja) * | 2011-05-20 | 2012-11-29 | 株式会社堀場製作所 | 測定ユニットおよびガス分析装置 |
CN102322949A (zh) * | 2011-07-28 | 2012-01-18 | 中国科学院西安光学精密机械研究所 | 一种超高时间分辨固态全光探测器 |
CN102544180A (zh) * | 2012-02-08 | 2012-07-04 | 南京大学 | 一种硫系太阳能电池及其制作方法 |
US9637999B2 (en) | 2014-03-18 | 2017-05-02 | Baker Hughes Incorporated | Isolation packer with automatically closing alternate path passages |
US10060198B2 (en) | 2014-03-18 | 2018-08-28 | Baker Hughes, A Ge Company, Llc | Isolation packer with automatically closing alternate path passages |
CN111354842A (zh) * | 2018-12-24 | 2020-06-30 | 晶元光电股份有限公司 | 半导体元件 |
US11585970B2 (en) * | 2019-10-04 | 2023-02-21 | Teledyne Scientific & Imaging, Llc | Low loss single crystal multilayer optical component and method of making same |
RU196935U1 (ru) * | 2019-10-09 | 2020-03-23 | федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский ядерный университет "МИФИ" (НИЯУ МИФИ) | КАЛИБРОВОЧНАЯ ДВУХПЕРИОДНАЯ СВЕРХРЕШЕТКА InAlAs/InGaAs НА ПОДЛОЖКЕ InP |
KR102300920B1 (ko) * | 2020-11-09 | 2021-09-13 | 한국과학기술원 | InP 기판을 이용한 소자 제조 방법 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US544193A (en) * | 1895-08-06 | Stencil-cutting machine | ||
US5206871A (en) * | 1991-12-27 | 1993-04-27 | At&T Bell Laboratories | Optical devices with electron-beam evaporated multilayer mirror |
JPH05343796A (ja) * | 1992-06-08 | 1993-12-24 | Nec Corp | 面出射形半導体レーザ |
FR2699337B1 (fr) * | 1992-12-15 | 1995-06-09 | Deveaud Pledran Benoit | Laser a cavite verticale de faible resistivite. |
JPH07249835A (ja) | 1994-03-11 | 1995-09-26 | Hitachi Ltd | 半導体光素子 |
US5956362A (en) * | 1996-02-27 | 1999-09-21 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting device and method of etching |
JPH1083149A (ja) * | 1996-06-18 | 1998-03-31 | Sony Corp | 自発光表示装置 |
US5732103A (en) * | 1996-12-09 | 1998-03-24 | Motorola, Inc. | Long wavelength VCSEL |
KR100237188B1 (ko) * | 1997-02-10 | 2000-02-01 | 정선종 | 튜너블 레이저 제조 방법 |
JPH11135833A (ja) * | 1997-10-30 | 1999-05-21 | New Japan Radio Co Ltd | 光半導体装置 |
JPH11145555A (ja) * | 1997-11-12 | 1999-05-28 | Oki Electric Ind Co Ltd | 面発光レーザ用ミラー構造およびその形成方法 |
JP3334598B2 (ja) * | 1998-03-25 | 2002-10-15 | 日本電気株式会社 | InP基板上II−VI族化合物半導体薄膜 |
JP2938445B1 (ja) | 1998-09-07 | 1999-08-23 | 株式会社日立製作所 | 量子井戸光変調器とそれを用いた光通信用モジュールおよび光通信システム |
JP3358556B2 (ja) * | 1998-09-09 | 2002-12-24 | 日本電気株式会社 | 半導体装置及びその製造方法 |
US20020158265A1 (en) | 2001-04-26 | 2002-10-31 | Motorola, Inc. | Structure and method for fabricating high contrast reflective mirrors |
US6873638B2 (en) * | 2001-06-29 | 2005-03-29 | 3M Innovative Properties Company | Laser diode chip with waveguide |
JP2003124508A (ja) | 2001-10-15 | 2003-04-25 | Sharp Corp | 発光ダイオード、デバイス、該デバイスを用いた表示または通信用光源装置 |
-
2004
- 2004-06-18 US US10/871,424 patent/US7126160B2/en not_active Expired - Fee Related
-
2005
- 2005-04-29 JP JP2007516485A patent/JP2008503090A/ja active Pending
- 2005-04-29 WO PCT/US2005/015009 patent/WO2006007032A1/en active Application Filing
- 2005-04-29 GB GB0623093A patent/GB2430552B/en not_active Expired - Fee Related
- 2005-04-29 DE DE112005001384T patent/DE112005001384T5/de not_active Withdrawn
- 2005-04-29 KR KR1020067026468A patent/KR101227293B1/ko not_active IP Right Cessation
- 2005-04-29 CN CNB2005800186743A patent/CN100479279C/zh not_active Expired - Fee Related
- 2005-05-12 TW TW094115454A patent/TW200618429A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
GB0623093D0 (en) | 2006-12-27 |
JP2008503090A (ja) | 2008-01-31 |
TW200618429A (en) | 2006-06-01 |
US7126160B2 (en) | 2006-10-24 |
KR20070034496A (ko) | 2007-03-28 |
CN1965452A (zh) | 2007-05-16 |
GB2430552A (en) | 2007-03-28 |
US20050280013A1 (en) | 2005-12-22 |
WO2006007032A1 (en) | 2006-01-19 |
CN100479279C (zh) | 2009-04-15 |
KR101227293B1 (ko) | 2013-01-29 |
GB2430552B (en) | 2009-05-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R012 | Request for examination validly filed |
Effective date: 20111207 |
|
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |