DE102005030946A1 - Semiconductor component for manufacturing switching power supply, has connecting unit with base ball and balls of solder stacked on base ball, where balls of solder have soldering material and electrical connected with contact pin surface - Google Patents
Semiconductor component for manufacturing switching power supply, has connecting unit with base ball and balls of solder stacked on base ball, where balls of solder have soldering material and electrical connected with contact pin surface Download PDFInfo
- Publication number
- DE102005030946A1 DE102005030946A1 DE102005030946A DE102005030946A DE102005030946A1 DE 102005030946 A1 DE102005030946 A1 DE 102005030946A1 DE 102005030946 A DE102005030946 A DE 102005030946A DE 102005030946 A DE102005030946 A DE 102005030946A DE 102005030946 A1 DE102005030946 A1 DE 102005030946A1
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- base
- solder
- ball
- balls
- semiconductor
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- H01—ELECTRIC ELEMENTS
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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Abstract
Description
Oberflächenmontierbare Halbleiterbauteile mit einem Verdrahtungssubstrats und Lotkugeln als Außenkontakte haben den Nachteil, dass die Außenkontakthöhe auf den Durchmesser der Lotkugeln begrenzt ist. Gleichzeitig hängt die Schrittweite, die auch "Pitch" genannt wird, mit dem die Außenkontakte auf der Unterseite eines Halbleiterbauteils für die Oberflächenmontage auf einer übergeordneten Schaltungsplatine angeordnet werden können, von dem Durchmesser der Lotkugeln ab. Somit kann der Bedarf an größerer Außenkontakthöhe nur mit dem Nachteil einer größeren Schrittweite erkauft werden.surface mount Semiconductor devices with a wiring substrate and solder balls as external contacts have the disadvantage that the external contact height on the Diameter of the solder balls is limited. At the same time the hangs Increment, which is also called "pitch", with the external contacts on the underside of a semiconductor device for surface mounting on a parent circuit board can be arranged from the diameter of the solder balls. Thus, the need for greater external contact height only with the disadvantage of a larger step size be bought.
Es besteht demnach der Bedarf, die Kopplung der Außenkontakthöhe an den Lotkugeldurchmesser von Verbindungselementen und Außenkontakten, insbesondere für oberflächenmontierbare Halbleiterbauteile zu überwinden.It There is therefore the need, the coupling of the external contact height to the Lotkugeldurchmesser of connecting elements and external contacts, especially for Surface mount semiconductor devices to overcome.
Ein bekannter Lösungsansatz ist die Ausbildung von galvanisch abgeschiedenen Sockeln mit Außenkontaktflächen für die Lotkugeln. Mit derartigen Sockeln kann die Außenkontakthöhe vollständig von dem Durchmesser der Lotkugeln entkoppelt werden. Jedoch hat dieser Lösungsansatz den Nachteil, dass er technisch aufwendig und kostenintensiv ist und nicht das vielfältige Angebot an preiswerten Lotkugelvarianten, die auf dem Fertigungssektor von Halbleiterbauteilen zur Verfügung stehen, ausnutzt.One known approach is the formation of galvanically deposited sockets with external contact surfaces for the solder balls. With such sockets, the outer contact height completely from the diameter of the Solder balls are decoupled. However, this approach has the disadvantage that it is technically complex and costly and not the varied offer on cheap solder ball variants used in the semiconductor device manufacturing sector to disposal stand, exploited.
Aus
der Druckschrift
Eine
derartige Verbindungsstruktur hat den Nachteil, dass die zwei Lotkugeln
des Verbindungselementes über
Grenzflächen
einer Lotpaste elektrisch in Verbindung stehen, was sowohl den Nachteil der
Ausbildung zusätzlicher
Kontaktübergangswiderstände zwischen
Lotmaterial und Material der Lotpaste hat, als auch den Nachteil
einer Einschränkung in
der Wahl der Materialien der Lotkugeln, zumal als Material der Lotkugeln,
gemäß
Aufgabe der Erfindung ist es, ein Halbleiterbauteil mit Verdrahtungssubstrat und Lotkugeln als Verbindungselemente anzugeben, bei denen die Höhe der Verbindungselemente größer ist, als der Außendurchmesser der Lotkugeln, wobei ein derartiges Verbindungselement die Nachteile und Einschränkungen im Stand der Technik überwinden soll, eine kostengünstige Fertigung ermöglichen soll, und sowohl als Außenkontakt, als auch als Verbindungselement in Halbleiterbauteilstapeln einsetzbar sein soll.task The invention is a semiconductor device with a wiring substrate and to provide solder balls as connecting elements, in which the height of the connecting elements is bigger, as the outer diameter the solder balls, wherein such a connecting element, the disadvantages and restrictions overcome in the prior art should, a cost-effective Enable production should, and as an external contact, as well as a connecting element in semiconductor device stacks can be used should be.
Diese Aufgabe wird mit dem Gegenstand der unabhängigen Ansprüche gelöst. Vorteilhafte Weiterbildungen der Erfindung ergeben sich aus den abhängigen Ansprüchen.These The object is achieved with the subject matter of the independent claims. advantageous Further developments of the invention will become apparent from the dependent claims.
Erfindungsgemäß wird ein Halbleiterbauteil mit Verdrahtungssubstrat und Lotkugeln als Verbindungselement geschaffen, wobei das Verbindungselement mindestens eine Sockelkugel und eine auf der Sockelkugel gestapelte Lotkugel aufweist. Dabei weist die Lotkugel mindestens teilweise ein lötbares Lotmaterial auf. Außerdem steht die Sockelkugel mit einer Kontaktanschlussfläche des Verdrahtungssubstrats elektrisch in Verbindung und weist eine nicht vom Lotmaterial der Lotkugel benetzbare Schutzbeschichtung auf ihrer Oberfläche auf. Außerdem weist die Sockelkugel eine Grenzfläche auf, die frei von der Schutzbeschichtung ist, wobei die Grenzfläche stoffschlüssig mit dem Material der Lotkugel verbunden ist.According to the invention is a Semiconductor device with wiring substrate and solder balls as connecting element created, wherein the connecting element at least one base ball and a solder ball stacked on the base ball. It points the solder ball at least partially a solderable solder material. It also stands the socket ball with a contact pad of the wiring substrate electrically connected and does not have a soldering material of the Lot-ball wettable protective coating on its surface. Furthermore the base ball has an interface that is free of the protective coating is, the interface cohesively connected to the material of the solder ball.
Ein
derartiges Verbindungselement hat gegenüber dem Verbindungselement
gemäß
In einer bevorzugten Ausführungsform der Erfindung weist das Verbindungselement mehrere, aufeinander gestapelte Sockelkugeln auf. Das zeigt, dass der erfindungsgemäße Lösungsansatz nicht nur auf zwei Kugeln beschränkt sein muss, vielmehr können nacheinander beliebig viele Sockelkugeln mit kleinstem Außendurchmesser aufeinander gelötet werden, wobei lediglich darauf zu achten ist, dass bis auf die Grenzfläche die jeweilige Oberfläche der Sockelkugeln durch eine Schutzbeschichtung geschützt ist.In a preferred embodiment of the invention, the connecting element has a plurality of pedestal balls stacked on one another. This shows that the inventive approach not only must be limited to two balls, but can successively as many base balls are soldered to each other with the smallest outer diameter, only care must be taken that the surface of the base balls is protected by a protective coating except for the interface.
In einer weiteren bevorzugten Ausführungsform der Erfindung weist das Verbindungselement mehrere aufeinander gestapelte Lotkugeln auf. In diesem Fall muss jedoch wie im Stand der Technik darauf geachtet werden, dass die gestapelten Lotkugeln mit einem Lotmaterial, wie einer Lotpaste verbunden werden, dessen Schmelzpunkt niedriger ist, als die aufeinander zu stapelnden Lotkugeln.In a further preferred embodiment According to the invention, the connecting element has a plurality of stacked ones Lot balls on. In this case, however, as in the prior art, it must be taken care that the stacked solder balls with a solder material, how to join a solder paste whose melting point is lower is than the solder balls to be stacked on each other.
Vorzugsweise ist die Schutzbeschichtung selbsttragend und formstabil und stützt die Sockelkugel. Diese mechanische Stabilität ist von Vorteil, insbesondere dann, wenn die Sockelkugel gegenüber der Lotkugel den niedrigeren Schmelzpunkt aufweist und über Benetzung der Schmelze der Sockelkugel die stoffschlüssige Grenzfläche mit der Lotkugel hergestellt wird.Preferably The protective coating is self-supporting and dimensionally stable and supports the Base ball. This mechanical stability is advantageous, in particular then, when the base ball opposite the Lotkugel the lower melting point and over wetting the melt of the base ball with the cohesive interface with the solder ball is made.
In einer bevorzugten Ausführungsform der Erfindung weist die Schutzbeschichtung eine Oxyd- oder Nitrid- oder Sulfidschicht des Materials der Sockelkugel auf. Dieses hat den Vorteil, dass mit einer einfachen Oxidations- oder Nitrierungsanlage sämtliche Sockelkugeln mit einer Schutzschicht überzogen werden können, wobei die Schutzschicht in einer Oxidations- oder Nitrierungsanlage gleichzeitig für eine Vielzahl vormontierter Sockelkugeln für Halbleiterbauteile aufgebracht werden kann.In a preferred embodiment invention, the protective coating comprises an oxide or nitride or sulfide layer of the material of the base ball. This one has the advantage that with a simple oxidation or nitration all Base balls can be coated with a protective layer, wherein the protective layer in an oxidation or nitriding plant at the same time for a variety preassembled base balls for Semiconductor components can be applied.
Alternativ ist es vorgesehen, dass die Schutzbeschichtung eine Metallbeschichtung ist, wobei das Metall nicht vom Lotmaterial der Lotkugel benetzbar ist. Derartige Metallbeschichtungen zeichnen sich dadurch aus, dass sie in einer sauerstoffhaltigen Atmosphäre eine Oberfläche ausbilden, die ihre Benetzbarkeit mit dem Lotmaterial herabsetzt.alternative it is envisaged that the protective coating is a metal coating is, wherein the metal is not wettable by the solder material of the solder ball is. Such metal coatings are characterized in that they form a surface in an oxygen-containing atmosphere, which minimizes their wettability with the solder material.
In einer weiteren bevorzugten Ausführungsform der Erfindung weist die Schutzbeschichtung eine Polymerbeschichtung auf, die vorzugsweise aus einem hochtemperaturfesten Polyimid besteht. Eine derartige Schutzbeschichtung hat den Vorteil, dass sie durch einfache Tauchtechnik, oder durch Aufsprühtechnik eine geeignete selbsttragende, das Lotmaterial der Sockelkugel stützende Schutzbeschichtung bilden. Dabei ist von Vorteil, dass vor dem Aushärten derartiger Lacke, sich die Lackschicht im Fußbereich der Sockelkugel deutlich dicker absetzt, als im Kopfbereich der Sockelkugel. Dieser Dickenunterschied kann durch entsprechende Abstimmung der Viskosität des Lackes noch verstärkt werden.In a further preferred embodiment According to the invention, the protective coating has a polymer coating on, which preferably consists of a high temperature resistant polyimide. Such a protective coating has the advantage that it simple immersion technique, or by spraying a suitable self-supporting, form the solder material of the base ball supporting protective coating. It is advantageous that before curing such paints, themselves the paint layer in the foot area the pedestal ball settles much thicker than in the head area of Base ball. This difference in thickness can by appropriate vote the viscosity of the paint reinforced become.
Vorzugsweise ist die Grenzfläche zwischen den beiden Lotkugeln eine sphärische Fläche. Eine sphärische Fläche bildet sich aus, wenn eines der beiden Materialien einen niedrigeren Schmelzpunkt aufweist, als das andere Material. So bildet sich auf der Sockelkugel eine konvexe Fläche aus, wenn der Schmelzpunkt der Lotkugel höher ist als der Schmelzpunkt der Sockelkugel und es bildet sich eine konkave Fläche aus, wenn der Schmelzpunkt der Lotkugel geringer ist, als der Schmelzpunkt der Sockelkugel. Sind die Schmelzpunkte gleich, so besteht die Möglichkeit, dass sich eine ebene Grenzfläche ausbildet. Ferner ist es vorgesehen, dass bei besonders harten Schutzbeschichtungen der obere Kugelabschnitt der Sockelkugel durch mechanisches Bearbeiten auch eingeebnet werden kann.Preferably is the interface between the two solder balls a spherical surface. A spherical surface forms when one of the two materials has a lower melting point, as the other material. So forms on the base ball one convex surface when the melting point of the solder ball is higher than the melting point the base ball and it forms a concave surface, when the melting point of the solder ball is lower than the melting point the base ball. If the melting points are the same, it is possible to that is a flat interface formed. Furthermore, it is envisaged that with particularly hard protective coatings the upper ball portion of the base ball by mechanical machining can also be leveled.
Weiterhin ist es vorgesehen, dass die Sockelkugel und die Lotkugel ein metallisches Kernmaterial aufweisen, dass einen höheren Schmelzpunkt hat, als der Mantel der Kugeln aufweist. Mit derartigen Kugelmaterialien aus zwei verschiedenen Metallen, einem Mantelmaterial mit niedrigem Schmelzpunkt und einem Kernmaterial mit hohem Schmelzpunkt, können Verbindungselemente hergestellt werden, die eine Mindesthöhe, welche durch die Kernmaterialien vorgegeben wird, beim Auflöten auf eine übergeordnete Schaltungsplatine nicht unterschreiten. Dieses kann auch von Vorteil sein, wenn Halbleiterbauteile zu stapeln sind.Farther it is envisaged that the base ball and the solder ball a metallic Have core material that has a higher melting point than the shell of the balls has. With such ball materials made of two different metals, a sheath material with low Melting point and a high melting point core material may be fasteners are made, which have a minimum height, which by the core materials is given, when soldering to a parent Do not fall below the circuit board. This can also be beneficial be when semiconductor devices are to be stacked.
In einer bevorzugten Ausführungsform der Erfindung weist die Sockelkugel eine Metalllegierung mit einem höheren Schmelzpunkt als die Lotkugel auf. Wenn die Sockelkugel und die Lotkugel ein Lotmaterial mit dem gleichen Schmelzpunkt aufweisen, umgibt vorzugsweise die Sockelkugel eine selbsttragende und formstabile Schutzbeschichtung. Durch die formstabile, selbsttragende Schutzbeschichtung wird gewährleistet, dass die beiden Lotkugelmassen nicht eine neue tropfenförmige Lotkugel mit größerem Durchmesser bilden.In a preferred embodiment the invention, the base ball has a metal alloy with a higher Melting point as the solder ball on. If the base ball and the Lotkugel a solder material having the same melting point surrounds preferably the base ball a self-supporting and dimensionally stable Protective coating. Due to the dimensionally stable, self-supporting protective coating is guaranteed that the two Lotkugelmassen not a new drop-shaped solder ball with a larger diameter form.
Vorzugsweise weist somit ein Halbleiterbauteil Außenkontakte aus Verbindungselementen mit mindestens einer Sockelkugel und einer auf der Sockelkugel gestapelte Lotkugel auf, wobei das Verdrahtungssubstrat beidseitig mit Halbleiterbauelementen bestückt ist. Die Unterseite des Verdrahtungssubstrats weist mindestens ein Halbleiterbauelement und die Außenkontakte des Halbleiterbauteils auf. Dabei richtet sich die Höhe der Außenkontakte nach der Dicke des auf der Unterseite angeordneten Halbleiterbauelements. Ein derartiges Halbleiterbauteil war bisher auf eine Bestückung mit Halbleiterbauelementen begrenzt, deren Dicke den Kugeldurchmesser der Lotkugeln für Außenkontakte nicht überschreitet.Preferably Thus, a semiconductor device external contacts of connecting elements with at least one base ball and one stacked on the base ball Lotkugel, wherein the wiring substrate is equipped on both sides with semiconductor devices. The underside of the wiring substrate has at least one semiconductor device and the external contacts of the semiconductor device. The height of the external contacts will follow the thickness of the arranged on the bottom semiconductor device. Such a semiconductor device was previously on a placement with Semiconductor devices whose thickness is the ball diameter the solder balls for external contacts does not exceed.
Durch die erfindungsgemäße Stapelung von Lotkugeln, um damit Außenkontakte und/oder Verbindungselemente herzustellen, ist es nun möglich, Halbleiterbauteile aus der Standardfertigung einzusetzen und damit eine größere Variationsbreite für die Konstruktion von Halbleiterbauteilmodulen zur Verfügung zu stellen. Darüber hinaus wird die Fertigung durch Einsatz von standardisierten Halbleiterbauelementen kostengünstiger.The inventive stacking of Solder balls in order to produce external contacts and / or connecting elements, it is now possible to use semiconductor components from the standard production and thus to provide a greater range of variation for the construction of semiconductor device modules available. In addition, manufacturing becomes more cost effective by using standardized semiconductor devices.
In einer weiteren Ausführungsform der Erfindung weist das Halbleiterbauteil ein Modul aus gestapelten Halbleiterbauelementen mit mindestens einem Basishalbleiterelement und einem gestapelten Halbleiterelements auf. Das Basishalbleiterelement weist dazu auf einer Oberseite ein von Sockelkugeln umgebenes Halbleiterbauelement auf. Das Basiselement weist darüber hinaus auf seiner Unterseite Standard oberflächenmontierbare Lotkugeln auf. Das gestapelte Halbleiterbauelement weist auf einer Oberseite seines Verdrahtungssubstrats ebenfalls ein Halbleiterbauelement auf und auf der Unterseite des Substrats Standard-Lotkugelaußenkontakte auf, die derart angeordnet sind, dass sie der Anordnung der Sockelkugeln auf der Oberseite des Verdrahtungssubstrats des Basishalbleiterbauelements entsprechen. Bei dieser Ausführungsform der Erfindung ist es von Vorteil, dass die Dicke des Gehäuses des Basishalbleiterbauelementes nicht mehr auf den Durchmesser der Lotkugeln beschränkt ist, sondern dass praktisch durch Stapeln von Lotkugel auf Sockelkugeln eine vom Lotkugeldurchmesser unabhängige Bauelementhöhe für das Basishalbleiterbauelement eingesetzt werden kann.In a further embodiment According to the invention, the semiconductor device has a stacked module Semiconductor devices having at least one base semiconductor element and a semiconductor stacked element. The base semiconductor element has for this purpose, a semiconductor component surrounded by base balls on an upper side on. The base element points above it There are also standard surface mount solder balls on its underside. The stacked semiconductor device has on an upper side of its Wiring substrate also a semiconductor device and on the bottom of the substrate standard solder ball outside contacts which are arranged so that they the arrangement of the base balls on top of the wiring substrate of the base semiconductor device correspond. In this embodiment The invention is advantageous in that the thickness of the housing of the base semiconductor component no longer limited to the diameter of the solder balls, but that by practically stacking solder ball on pedestal balls independent of Lotkugeldurchmesser device height for the base semiconductor component can be used.
Ein Verfahren zur Herstellung mehrerer Halbleiterbauteile mit Verdrahtungssubstraten und Lotkugeln als Verbindungselemente weist die nachfolgenden Verfahrensschritte auf. Zunächst wird ein Nutzen mit in Zeilen und Spalten angeordneten Halbleiterbauteilpositionen hergestellt, wobei der Nutzen in den Halbleiterbauteilpositionen eine Verdrahtungsstruktur der Verdrahtungssubstrate mit Bereichen für Halbleiterbauelemente und außerhalb dieser Bereiche Positionen mit Kontaktanschlussflächen für ein Anbringen von Sockelkugeln aufweist. Anschließend wird dieser Nutzen in den Halbleiterbauteilpositionen mit den Kontaktanschlussflächen mit Sockelkugeln bestückt.One Method for producing a plurality of semiconductor components with wiring substrates and solder balls as connecting elements has the following method steps on. First becomes a benefit with semiconductor device locations arranged in rows and columns with the benefit in the semiconductor device positions a wiring structure of the wiring substrates with areas for semiconductor devices and outside these areas positions with contact pads for attachment of pedestal balls. Subsequently, this benefit is in the semiconductor device positions with the contact pads with Base balls fitted.
Diese Sockelkugeln werden schließlich mit einer von Lotmaterial nicht benetzbaren Schutzbeschichtung beschichtet. Danach erfolgt ein selektives Entfernen der Schutzbeschichtung in einem für eine Grenzfläche zu einer Lotkugel vorgesehenem Bereich der Oberfläche der Sockelkugel. Danach wird eine Lotkugel auf die jeweilige Grenzfläche einer Sockelkugel aufgebracht und stoffschlüssig verbunden. Anschließend können die Halbleiterbauteilpositionen mit Halbleiterbauelementen unter Verbinden der Halbleiterbauelemente mit der Verdrahtungsstruktur bestückt werden. Schließlich wird der Nutzen in einzelne Halbleiterbauteile aufgetrennt.These Skirting balls eventually become coated with a non-wettable by soldering protective coating. Thereafter, a selective removal of the protective coating in one for an interface to a Lotkugel provided area of the surface of Base ball. Thereafter, a solder ball on the respective interface of a Base ball applied and bonded cohesively. Subsequently, the Semiconductor device positions with semiconductor devices under bonding the semiconductor devices are equipped with the wiring structure. After all the benefit is separated into individual semiconductor components.
Dieses Verfahren hat den Vorteil, das der Nutzen nicht nur Verbindungselemente aus Sockelkugeln und Lotkugeln gemeinsam mit einem Halbleiterbauelement auf seiner Unterseite auf weist, sondern auch den Vorteil, dass die Oberseiten der Halbleiterbauteilpositionen des Nutzen für das Aufbringen von Halbleiterbauteilelementen genutzt werden können. Damit entstehen aus einem derartigen Nutzen Halbleiterbauteile in Form von Halbleitermodulen für die unterschiedlichsten Anwendungen. Eine bevorzugte Anwendung ist die Fertigung von Schaltnetzteilen unter beidseitiger Nutzung eines BGA-Substrats (ball-grid-array), wobei die Bauhöhe der einzelnen Komponenten keinen Einfluss mehr auf den Kontaktabstand des gesamten Moduls in Form eines gesamten SiP (system-in-package) hat.This Method has the advantage that the benefit not only fasteners from base balls and solder balls together with a semiconductor device on its underside points to, but also has the advantage that the Tops of semiconductor device locations of the benefit for applying Semiconductor device elements can be used. This results in one such benefits semiconductor devices in the form of semiconductor modules for the different applications. A preferred application is the Production of switching power supplies under mutual use of a BGA substrate (ball-grid array), the height of each component no longer affect the contact distance of the entire module in the form of an entire SiP (system-in-package).
Damit können die Einzelkomponenten in Standard-Gehäusen oder Standard-Bauhöhen hergestellt werden, und auch als einzelne Bauelemente verkauft werden. Somit können die Einzelkomponenten in größeren Stückzahlen gefertigt werden, und die Herstellkosten für das gesamte SiP-Produkt sinken. Außerdem ist die Integrationsdichte derartiger Module nicht mehr von der Höhe der Lotkugel abhängig und die Lotkugel-Höhe kann auf die notwendige Bauteilhöhe auf der Substratunterseite optimiert werden.In order to can the individual components are manufactured in standard housings or standard heights be sold, and also as individual components. Consequently can the individual components in larger quantities be manufactured, and the production costs for the entire SiP product decline. Furthermore the integration density of such modules is no longer of the height of Lot ball dependent and the solder ball height can to the necessary component height be optimized on the substrate base.
Vorzugsweise werden die Sockelkugeln auf Positionen mit Kontaktanschlussflächen auf der Unterseite des Nutzens und die Halbleiterbauelemente auf Bereichen der Oberseite des Nutzens angeordnet. Diese Aufteilung ist dann von Vorteil, wenn die vorgesehenen Halbleiterbauteile über ein Stapeln von Halbleiterbauteilen vorgesehen werden.Preferably the pedestal balls are placed on positions with contact pads the bottom of the benefits and the semiconductor devices on areas arranged the top of the benefit. This division is then advantageous if the provided semiconductor devices over a Stacking of semiconductor devices can be provided.
Weiterhin ist es vorgesehen, die Sockelkugel als Außenkontakte der Halbleiterbauteile auf Positionen mit Kontaktanschlussflächen auf der Unterseite des Nutzens derart anzuordnen, dass sie mindestens einen Bereich mit einem Halbleiterbauelement umgeben, wobei auf der Oberseite des Nutzens wei tere Bereiche für Halbleiterbauelemente vorgesehen werden können. Bei diesem Durchführungsbeispiel des Verfahrens wird bereits die Stapelbarkeit eines derartigen Halbleiterbauteils durch Anordnung der Kontaktanschlussflächen auf der Unterseite des Nutzens vorgegeben.Farther it is provided, the base ball as external contacts of the semiconductor devices on positions with contact pads on the bottom of the Use to arrange so that they at least one area with a semiconductor device, wherein on the top of the Use other areas for Semiconductor devices can be provided. In this implementation example of the method is already the stackability of such a semiconductor device by placing the contact pads on the bottom of the Benefit given.
Ein derartiges Modul aus gestapelten Halbleiterbauteilen wird mit einem Nutzen gefertigt, dessen Verbindungselemente aus Sockelkugeln und Lotkugeln auf Positionen mit Kontaktanschlussflächen auf der Unterseite des Nutzens angeordnet sind, wobei die Sockelkugeln mit aufgebrachten Lotkugeln einen Bereich umgeben, in dem Halbleiterbauteilgehäuse eines Basishalbleiterbauelementes angeordnet werden können. Für einen derartigen Stapel ist es auch möglich, dass mehrere Sockelkugeln aufeinander gelötet werden, bevor eine Lotkugel als Anschluss des Verbindungselementes aufgebracht wird.Such a module of stacked semiconductor devices is fabricated with a utility whose base-ball and solder-ball connectors are located at positions with contact pads on the bottom side of the socket, with the socket balls having applied solder balls surrounding an area in the semiconductor Component housing of a base semiconductor component can be arranged. For such a stack, it is also possible that a plurality of base balls are soldered to each other before a solder ball is applied as a connection of the connecting element.
Um eine Schutzbeschichtung auf der Sockelkugel auszubilden, wird die Sockelkugel oxidiert, nitriert oder mit einer Sulfidschicht in einem bevorzugten Verfahren versehen. Für die Ausbildung einer selbsttragenden, formstabilen Schutzbeschichtung für die Sockelkugeln aus einer Polymerschicht wird vorzugsweise der mit Sockelkugeln bestückte Nutzen in einen Hochtemperaturlack getaucht, um die Sockelkugeln mit einem derartigen Hochtemperaturlack zu beschichten. Zur Ausbildung einer Schutzbeschichtung kann auch ein Metall auf den Sockelkugel mittels Sputtern oder Aufdampfen abgeschieden werden, das nicht vom Lotmaterial der Lotkugel benetzbar ist.Around to form a protective coating on the base ball, the Base ball oxidized, nitrided or with a sulphide layer in one preferred method provided. For the training of a self-supporting, dimensionally stable protective coating for the base balls of a Polymer layer is preferably the stocked with base balls benefits dipped in a high temperature varnish to the base balls with a to coat such high temperature paint. To form a Protective coating can also be a metal on the base ball by means of Sputtering or vapor deposition are deposited, not from the solder material the solder ball is wettable.
Auch hier ist es von Vorteil, wenn eine derartige Beschichtung auf einem Nutzen vorgenommen wird, der bereits mit Sockelkugeln bestückt ist, aber noch keine Halbleiterbauelemente trägt. Für das selektive Entfernen der Schutzbeschichtung in einem für eine Grenzfläche für eine Lotkugel vorgesehenen Bereich der Oberfläche der Sockelkugeln wird vorzugsweise ein Laserabtragsverfahren eingesetzt. Ein derartiges Laserabtragsverfahren hat den Vorteil, dass der Fokus des Laser derart eingestellt werden kann, dass exakt ein Bereich auf dem Kopf bzw. an der Spitze der Sockelkugel von der Schutzschicht befreit wird. Zum Entfernen der Schutzbeschichtung kann auch ein Trockenätzverfahren, eingesetzt werden, wobei ein gerichtetes Ionenstrahlätzen ohne gleichzeitigen Schutz der nicht zu ätzenden Bereiche auskommt, während ein Trockenätzen ohne Vorzugsrichtung der Ionen einen gleichzeitigen Schutz der nicht zu ätzenden Bereiche erfordert.Also Here it is advantageous if such a coating on a Benefit is made, which is already equipped with base balls, but still carries no semiconductor devices. For the selective removal of Protective coating in one for an interface for one Lotkugel provided area of the surface of the base balls is preferably used a laser ablation process. Such a laser ablation process has the advantage that the focus of the laser can be adjusted in such a way that exactly one area on the head or at the top of the base ball is freed from the protective layer. To remove the protective coating can also a dry etching process, be used, wherein a directed ion beam etching without simultaneous Protection of non-corrosive Areas gets along while a dry etching without preferential direction of the ions a simultaneous protection of the not too corrosive Areas required.
In einem weiteren bevorzugten Ausführungsbeispiel des Verfahrens wird das selektive Entfernen der Schutzbeschichtung auf der Sockelkugel zum Ausbilden einer ebenen Grenzfläche mittels Schleif- und/oder Polierverfahren durchgeführt. Manche der Schleif- und/oder Polierverfahren werden dann eingesetzt, wenn das Material der Sockelkugel eine hohe Härte aufweist und keine andere Möglichkeit besteht, die Schutzschicht auf der Oberseite der Sockelkugel teilweise zu entfernen.In a further preferred embodiment The method is the selective removal of the protective coating on the base ball to form a planar interface by means of Grinding and / or polishing process performed. Some of the grinding and / or Polishing methods are used when the material of the base ball a high hardness and there is no other possibility the protective layer on the top of the base ball partially too remove.
Bei einer weiteren Ausführungsform des Verfahrens wird vor dem Aufbringen der Lotkugel auf die Grenzfläche diese von einem Flussmittel benetzt. Dieses hat den Vorteil, dass die beiden Lotmaterialien an der Grenzfläche ohne zusätzliche dritte Lotmaterialien miteinander verbunden werden können, so dass der Kontaktübergangswiderstand vernachlässigbar klein wird.at a further embodiment of the method is applied to the interface before applying the solder ball wetted by a flux. This has the advantage that the two solder materials at the interface without additional third solder materials can be joined together, so that the contact transfer resistance negligible gets small.
Die Erfindung wird nun anhand der beigefügten Figuren näher erläutert.The The invention will now be described with reference to the accompanying figures.
Dieses
Oxyd ist durch einen Oxidationsvorgang des Materials der Sockelkugel
Die
nachfolgenden
Darüber hinaus
stehen die Außenkontakte
- 11
- Halbleiterbauteil (erste Ausführungsform)Semiconductor device (first embodiment)
- 22
- Halbleiterbauteil (zweite Ausführungsform)Semiconductor device (second embodiment)
- 33
- Halbleiterbauteil (dritte Ausführungsform)Semiconductor device Third Embodiment
- 44
- Verdrahtungssubstrat mit gestapelten Lotkugelnwiring substrate with stacked solder balls
- 55
- Verdrahtungssubstrats ohne gestapelte Lotkugelnwiring substrate without stacked solder balls
- 66
- Lotkugel (gestapelt)solder ball (Stacked)
- 77
- Verbindungselementconnecting element
- 88th
- Sockelkugelbase ball
- 99
- Kontaktanschlussfläche des VerdrahtungssubstratContact surface of the wiring substrate
- 1010
- Schutzbeschichtung der Sockelkugelprotective coating the base ball
- 1111
- Oberfläche der SockelkugelSurface of the base ball
- 1212
- Grenzfläche der Sockelkugel (frei von SchutzbeschichInterface of the Base ball (free of protective coating
- tung)tung)
- 1313
- Polymerbeschichtungpolymer coating
- 1414
- Polymerkugel (metallbeschichtet)polymer ball (Metallized)
- 1515
- Außenkontakt des Halbleiterbauteilsoutside Contact of the semiconductor device
- 1616
- HalbleiterbauelementSemiconductor device
- 1717
- Unterseite des Verdrahtungssubstratsbottom of the wiring substrate
- 1818
- BasishalbleiterbauelementBased semiconductor device
- 1919
- gestapelten Halbleiterbauelementstacked Semiconductor device
- 2020
- Gehäuse des BasishalbleiterbauelementsHousing of Based semiconductor device
- 2121
- Kontaktanschlussfläche des BasishalbleiterbauelementsContact surface of the Based semiconductor device
- 2222
- Oberseite des Verdrahtungssubstrats des Basishalbleitertop of the wiring substrate of the base semiconductor
- bauelementsconstruction element
- 2323
- Oberseite des Verdrahtungssubstrats mit gestapelten Lottop of the wiring substrate with stacked solder
- kugelnroll
- 2424
- Lötstopplackschichtsolder resist layer
- 2525
- Flussmittelflux
- 2626
- Druckwerkzeugpressure tool
- 2727
- Polyimidpolyimide
- 2828
- Unterseite des Verdrahtungssubstrats des Basishalbleibottom of the base alkaline lead wiring substrate
- terbauelementsterbauelements
- 2929
- Weichlotsolder
- 3030
- Schaltungsknotencircuit node
- 3131
- MOSFETMOSFET
- 3232
- MOSFETMOSFET
- 3333
- SchaltungsnetzteilCircuit power supply
- 3434
- Durchkontaktethrough contacts
- 3535
- Verdrahtungsstrukturwiring structure
- 3636
- Flipchip-KontaktFlip-Contact
- 3737
- unterer Halbleiterchiplower Semiconductor chip
- 3838
- Bonddrahtbonding wire
- 3939
- gestapelter Halbleiterchipstacked Semiconductor chip
- 4040
- Durchkontakte des gestapelten Halbleiterbauelementsthrough contacts the stacked semiconductor device
- 4141
- Verdrahtungsstruktur des gestapelten Halbleiterbauelewiring structure of the stacked semiconductor device
- mentsments
- 4242
- Bondverbindung des gestapelten Halbleiterbauelementsbond the stacked semiconductor device
- 4343
- Halbleiterchip des gestapelten HalbleiterbauelementsSemiconductor chip the stacked semiconductor device
- CC
- Kondensatorcapacitor
- LL
- Induktivitätinductance
- ICIC
- integrierte Schaltungintegrated circuit
- hH
- Höhe des VerbindungselementesHeight of the connecting element
- dd
- Durchmesser der Lotkugeldiameter the solder ball
Claims (30)
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