DE10013013A1 - Chemisch synthetisierte und aufgebaute elektronische Bauelemente - Google Patents
Chemisch synthetisierte und aufgebaute elektronische BauelementeInfo
- Publication number
- DE10013013A1 DE10013013A1 DE10013013A DE10013013A DE10013013A1 DE 10013013 A1 DE10013013 A1 DE 10013013A1 DE 10013013 A DE10013013 A DE 10013013A DE 10013013 A DE10013013 A DE 10013013A DE 10013013 A1 DE10013013 A1 DE 10013013A1
- Authority
- DE
- Germany
- Prior art keywords
- conductor
- wires
- conductors
- crossing
- switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/701—Organic molecular electronic devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/701—Integrated with dissimilar structures on a common substrate
- Y10S977/702—Integrated with dissimilar structures on a common substrate having biological material component
- Y10S977/704—Nucleic acids, e.g. DNA or RNA
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/701—Integrated with dissimilar structures on a common substrate
- Y10S977/702—Integrated with dissimilar structures on a common substrate having biological material component
- Y10S977/705—Protein or peptide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
Abstract
Description
- 1. Prozeß-definierte Drähte (definiert als Drähte, die
durch herkömmliche Elektronikschaltungsverarbeitungs
techniken präpariert werden; die Drähte werden ty
pischerweise auf einem Substrat als Teil einer Schaltung
präpariert):
Metallische Drähte und Halbleiterdrähte mit Durchmes sern, die von mehreren Mikrometern bis zu einem einzigen Mikrometer reichen (definiert als Mikrometermaßstab), oder mit Durchmessern, die von einem einzigen Mikrometer runter bis zu 40 Nanometern reichen (definiert als Sub mikrometermaßstab), können unter Verwendung einer wohl etablierten Technik präpariert werden, einschließlich lithographischen Technologien (optischen, Ultraviolett- oder Elektronenstrahl-Technologien). Diese Drähte weisen normalerweise eine Streifenform oder einen rechteckigen Querschnitt auf, obwohl kreisförmige Querschnitte nicht ausgeschlossen sind, wobei die Breite des Drahts durch den lithographischen Prozeß bestimmt ist, der verwendet wird, um den Draht zu definieren, und dessen Höhe durch die Menge des aufgebrachten Materials in der Region, die durch die Lithographie definiert ist, definiert ist. - 2. Chemisch vorbereitete Drähte (diese Drähte werden durch
andere Techniken als den herkömmlichen elektronischen
Verarbeitungstechnologien präpariert; die Drähte werden
typischerweise als ein Vollmaterial und nicht als Teil
einer Schaltungsplatine präpariert):
Metall- und Halbleiternanodrähte sind definiert als Drähte mit Durchmessern unter 50 Nanometern (typischer weise 2 bis 20 Nanometer) und mit Längen in dem Bereich von 0,1 Mikrometer bis 50 Mikrometer (typischerweise 5 bis 10 Mikrometer). Diese können chemisch unter Verwen dung jeglicher einer Anzahl von Techniken präpariert werden, die in den Referenzen, die im folgenden angege ben werden, beschrieben sind.
- 1. Silizium: A. M. Morales u. a., "A laser ablation method for the synthesis of crystalline semiconductor nano wires", Science, Bd. 279, S. 208-211 (9. Jan. 1998).
- 2. Germanium: J. R. Heath u. a., "A liquid solution synthe sis of single crystal germanium quantum wires", Chemical Physics Letters, Bd. 208, S. 263-268 (11. Juni 1993).
- 3. Metall-Nanodrähte: V. P. Menon u. a., "Fabrication and Evaluation of Nanoelectrode Ensembles", Analytical Chemistry, Bd. 67, S. 1920-1928 (1. Juli 1995).
- 4. Funktionalisierung von Silizium: T. Vissmeyer u. a., "Combinatorial approaches toward patterning nanocry stals", Journal of Applied. Physics, Bd. 84, S. 3664-3670 (1. Oktober 1998) (eine aus mehreren Referenzen).
- 5. Funktionalisierung der Oberflächen von Gold-Nanostruktu ren: D. V. Leff u. a., "Thermodynamic Size Control of Au Nanocrystals: Experiment and Theory", The Journal of Physical Chemistry, Bd. 99, S. 7036-7041 (4. Mai 1995).
Claims (13)
- a) Bilden des ersten Leiters (12);
- b) Aufbringen der zumindest einen Verbinderspezies (16) über zumindest einem Abschnitt des ersten Leiters (12); und
- c) Bilden des zweiten Leiters (14) über den ersten Leiter (12), um den Übergang (18) zu bilden.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/282,048 US6459095B1 (en) | 1999-03-29 | 1999-03-29 | Chemically synthesized and assembled electronics devices |
Publications (2)
Publication Number | Publication Date |
---|---|
DE10013013A1 true DE10013013A1 (de) | 2000-10-26 |
DE10013013B4 DE10013013B4 (de) | 2006-02-09 |
Family
ID=23079885
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10013013A Expired - Fee Related DE10013013B4 (de) | 1999-03-29 | 2000-03-17 | Chemisch synthetisierte und aufgebaute elektronische Bauelemente |
Country Status (2)
Country | Link |
---|---|
US (3) | US6459095B1 (de) |
DE (1) | DE10013013B4 (de) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10064865A1 (de) * | 2000-12-25 | 2002-07-04 | Andreas Graff | Verfahren zur Herstellung und Anwendung von Nanodrähten |
WO2002055503A1 (en) * | 2001-01-12 | 2002-07-18 | Hewlett-Packard Company | Bistable tricyclic molecules with an appended rotor activated by an electric field for electronic switching, gating and memory applications |
WO2002059984A2 (en) * | 2000-12-14 | 2002-08-01 | Hewlett-Packard Company | Stabilization of configurable molecular mechanical devices |
WO2002078056A2 (en) * | 2001-03-22 | 2002-10-03 | Hewlett-Packard Company | Passivation layer for molecular electronic device fabrication |
WO2002082544A2 (en) * | 2001-04-03 | 2002-10-17 | Carnegie Mellon University | Electronic circuit device, system and method |
WO2003005369A2 (de) * | 2001-07-05 | 2003-01-16 | Infineon Technologies Ag | Molekularelektronik-anordnung und verfahren zum herstellen einer molekularelektronik-anordnung |
EP1278234A2 (de) * | 2001-07-19 | 2003-01-22 | STMicroelectronics S.r.l. | MOS Transistor und Verfahren zu dessen Herstellung |
DE10155054A1 (de) * | 2001-11-09 | 2003-06-12 | Friz Biochem Gmbh | Molekulares elektronisches Bauelement zum Aufbau nanoelektronischer Schaltungen, molekulare elektronische Baugruppe, elektronische Schaltung und Herstellungsverfahren |
WO2003049151A2 (en) * | 2001-06-28 | 2003-06-12 | Hewlett-Packard Company | Fabrication of molecular electronic circuit by imprinting |
DE10201645A1 (de) * | 2002-01-17 | 2003-08-07 | Infineon Technologies Ag | Verfahren zur Codierung und Authentifizierung von Halbleiterschaltungen |
WO2003100878A2 (en) * | 2002-05-20 | 2003-12-04 | Hewlett-Packard Development Company, L.P. | A low-forward-voltage molecular rectifier |
WO2004003972A2 (en) * | 2002-07-01 | 2004-01-08 | Hewlett-Packard Development Company, L.P. | Transistor and sensors made from molecular materials with electric dipoles |
Families Citing this family (147)
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US5673218A (en) | 1996-03-05 | 1997-09-30 | Shepard; Daniel R. | Dual-addressed rectifier storage device |
US6859548B2 (en) | 1996-09-25 | 2005-02-22 | Kabushiki Kaisha Toshiba | Ultrasonic picture processing method and ultrasonic picture processing apparatus |
US7030408B1 (en) * | 1999-03-29 | 2006-04-18 | Hewlett-Packard Development Company, L.P. | Molecular wire transistor (MWT) |
US6459095B1 (en) * | 1999-03-29 | 2002-10-01 | Hewlett-Packard Company | Chemically synthesized and assembled electronics devices |
US6539156B1 (en) * | 1999-11-02 | 2003-03-25 | Georgia Tech Research Corporation | Apparatus and method of optical transfer and control in plasmon supporting metal nanostructures |
JP2001284572A (ja) * | 2000-03-29 | 2001-10-12 | Hewlett Packard Co <Hp> | 電子デバイス |
US6956757B2 (en) | 2000-06-22 | 2005-10-18 | Contour Semiconductor, Inc. | Low cost high density rectifier matrix memory |
KR100360476B1 (ko) * | 2000-06-27 | 2002-11-08 | 삼성전자 주식회사 | 탄소나노튜브를 이용한 나노 크기 수직 트랜지스터 및 그제조방법 |
KR100984585B1 (ko) | 2000-08-22 | 2010-09-30 | 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 | 반도체 성장 방법 및 디바이스 제조 방법 |
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Also Published As
Publication number | Publication date |
---|---|
DE10013013B4 (de) | 2006-02-09 |
US6846682B2 (en) | 2005-01-25 |
US6903366B2 (en) | 2005-06-07 |
US20010054709A1 (en) | 2001-12-27 |
US6459095B1 (en) | 2002-10-01 |
US20040093575A1 (en) | 2004-05-13 |
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