CN1771563A - 使用a/d转换器的快速、准确且低电源电压的增压器 - Google Patents
使用a/d转换器的快速、准确且低电源电压的增压器 Download PDFInfo
- Publication number
- CN1771563A CN1771563A CNA2004800093000A CN200480009300A CN1771563A CN 1771563 A CN1771563 A CN 1771563A CN A2004800093000 A CNA2004800093000 A CN A2004800093000A CN 200480009300 A CN200480009300 A CN 200480009300A CN 1771563 A CN1771563 A CN 1771563A
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- CN
- China
- Prior art keywords
- voltage
- supercharging
- boost
- circuit
- supply voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims abstract description 36
- 238000001514 detection method Methods 0.000 claims abstract description 8
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- 238000007254 oxidation reaction Methods 0.000 description 13
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- 238000007334 copolymerization reaction Methods 0.000 description 7
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- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 1
- 206010011469 Crying Diseases 0.000 description 1
- 108010076504 Protein Sorting Signals Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005264 electron capture Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/406,415 US6798275B1 (en) | 2003-04-03 | 2003-04-03 | Fast, accurate and low power supply voltage booster using A/D converter |
US10/406,415 | 2003-04-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1771563A true CN1771563A (zh) | 2006-05-10 |
CN100552804C CN100552804C (zh) | 2009-10-21 |
Family
ID=32990272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800093000A Expired - Lifetime CN100552804C (zh) | 2003-04-03 | 2004-03-08 | 用于产生调整增压电压的系统及产生增压电压的方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6798275B1 (zh) |
JP (1) | JP4495723B2 (zh) |
KR (1) | KR20050118718A (zh) |
CN (1) | CN100552804C (zh) |
DE (1) | DE112004000588B4 (zh) |
GB (1) | GB2416235B (zh) |
TW (1) | TWI325136B (zh) |
WO (1) | WO2004095462A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101620886B (zh) * | 2008-07-02 | 2012-01-25 | 中芯国际集成电路制造(上海)有限公司 | 用于闪存器件的字线增压器 |
CN106340320A (zh) * | 2015-07-15 | 2017-01-18 | 中国科学院微电子研究所 | 一种存储器读取方法及读取系统 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7295075B2 (en) * | 2004-11-16 | 2007-11-13 | Sige Semiconductor Inc. | OFDM amplifier and method therefor |
US7760558B2 (en) * | 2008-01-15 | 2010-07-20 | Spansion Llc | Voltage booster by isolation and delayed sequential discharge |
US8300489B2 (en) * | 2010-01-12 | 2012-10-30 | International Business Machines Corporation | Charge pump system and method utilizing adjustable output charge and compilation system and method for use by the charge pump |
US20110199039A1 (en) * | 2010-02-17 | 2011-08-18 | Lansberry Geoffrey B | Fractional boost system |
US8724373B2 (en) | 2011-09-12 | 2014-05-13 | Qualcomm Incorporated | Apparatus for selective word-line boost on a memory cell |
US9658682B2 (en) * | 2012-07-27 | 2017-05-23 | Atmel Corporation | Reference voltage circuits in microcontroller systems |
US9360928B2 (en) | 2012-07-27 | 2016-06-07 | Atmel Corporation | Dual regulator systems |
US8711648B2 (en) * | 2012-07-31 | 2014-04-29 | Nanya Technology Corporation | Voltage generating system and memory device using the same |
US9257153B2 (en) | 2012-09-21 | 2016-02-09 | Atmel Corporation | Current monitoring circuit for memory wakeup time |
KR102090677B1 (ko) | 2013-09-16 | 2020-03-18 | 삼성전자주식회사 | 비휘발성 메모리 장치 및 그것의 동작 방법 |
KR102233810B1 (ko) | 2014-02-03 | 2021-03-30 | 삼성전자주식회사 | 비휘발성 메모리 장치 및 그것의 워드라인 구동 방법 |
CN104883052B (zh) * | 2015-06-07 | 2017-11-14 | 上海华虹宏力半导体制造有限公司 | 提升电容电路以及电荷泵 |
CN107481748B (zh) * | 2016-06-07 | 2020-06-05 | 中芯国际集成电路制造(上海)有限公司 | 一种字线电压生成电路、半导体器件及电子装置 |
CN109993953B (zh) * | 2018-01-02 | 2022-06-28 | 严如强 | 一种低功耗供电模块 |
US11776625B2 (en) * | 2021-10-07 | 2023-10-03 | Micron Technology, Inc. | Boost-assisted memory cell selection in a memory array |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2193392A (en) * | 1986-08-02 | 1988-02-03 | Plessey Co Plc | Efficiency enhanced voltage multiplier |
GB9007791D0 (en) * | 1990-04-06 | 1990-06-06 | Foss Richard C | High voltage boosted wordline supply charge pump and regulator for dram |
JP2838344B2 (ja) * | 1992-10-28 | 1998-12-16 | 三菱電機株式会社 | 半導体装置 |
JP3129131B2 (ja) * | 1995-02-01 | 2001-01-29 | 日本電気株式会社 | 昇圧回路 |
DE69513658T2 (de) | 1995-09-29 | 2000-05-31 | St Microelectronics Srl | Spannungsregler für nichtflüchtige, elektrisch programmierbare Halbleiterspeicheranordnungen |
US5602794A (en) * | 1995-09-29 | 1997-02-11 | Intel Corporation | Variable stage charge pump |
US5726944A (en) * | 1996-02-05 | 1998-03-10 | Motorola, Inc. | Voltage regulator for regulating an output voltage from a charge pump and method therefor |
US5818288A (en) * | 1996-06-27 | 1998-10-06 | Advanced Micro Devices, Inc. | Charge pump circuit having non-uniform stage capacitance for providing increased rise time and reduced area |
JP3293577B2 (ja) * | 1998-12-15 | 2002-06-17 | 日本電気株式会社 | チャージポンプ回路、昇圧回路及び半導体記憶装置 |
IT1306964B1 (it) * | 1999-01-19 | 2001-10-11 | St Microelectronics Srl | Circuito a boosting capacitivo per la regolazione della tensione dilettura di riga in memorie non-volatili |
WO2000046807A1 (en) * | 1999-02-02 | 2000-08-10 | Macronix International Co., Ltd. | Improved word line boost circuit |
JP2001273784A (ja) * | 2000-03-29 | 2001-10-05 | Mitsubishi Electric Corp | 昇圧回路および半導体記憶装置 |
US6967523B2 (en) * | 2000-11-21 | 2005-11-22 | Mosaid Technologies Incorporated | Cascaded charge pump power supply with different gate oxide thickness transistors |
US6424570B1 (en) * | 2001-06-26 | 2002-07-23 | Advanced Micro Devices, Inc. | Modulated charge pump with uses an analog to digital converter to compensate for supply voltage variations |
US6535424B2 (en) * | 2001-07-25 | 2003-03-18 | Advanced Micro Devices, Inc. | Voltage boost circuit using supply voltage detection to compensate for supply voltage variations in read mode voltage |
-
2003
- 2003-04-03 US US10/406,415 patent/US6798275B1/en not_active Expired - Lifetime
-
2004
- 2004-03-08 WO PCT/US2004/007188 patent/WO2004095462A1/en active Application Filing
- 2004-03-08 CN CNB2004800093000A patent/CN100552804C/zh not_active Expired - Lifetime
- 2004-03-08 DE DE112004000588.4T patent/DE112004000588B4/de not_active Expired - Fee Related
- 2004-03-08 JP JP2006507002A patent/JP4495723B2/ja not_active Expired - Fee Related
- 2004-03-08 KR KR1020057018828A patent/KR20050118718A/ko not_active Application Discontinuation
- 2004-03-08 GB GB0518352A patent/GB2416235B/en not_active Expired - Fee Related
- 2004-03-18 TW TW093107243A patent/TWI325136B/zh not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101620886B (zh) * | 2008-07-02 | 2012-01-25 | 中芯国际集成电路制造(上海)有限公司 | 用于闪存器件的字线增压器 |
CN106340320A (zh) * | 2015-07-15 | 2017-01-18 | 中国科学院微电子研究所 | 一种存储器读取方法及读取系统 |
CN106340320B (zh) * | 2015-07-15 | 2019-06-21 | 中国科学院微电子研究所 | 一种存储器读取方法及读取系统 |
Also Published As
Publication number | Publication date |
---|---|
TWI325136B (en) | 2010-05-21 |
DE112004000588T5 (de) | 2006-02-02 |
US6798275B1 (en) | 2004-09-28 |
US20040196093A1 (en) | 2004-10-07 |
DE112004000588B4 (de) | 2015-07-16 |
GB2416235B (en) | 2006-07-19 |
CN100552804C (zh) | 2009-10-21 |
GB2416235A (en) | 2006-01-18 |
TW200501168A (en) | 2005-01-01 |
JP4495723B2 (ja) | 2010-07-07 |
WO2004095462A1 (en) | 2004-11-04 |
GB0518352D0 (en) | 2005-10-19 |
JP2006526862A (ja) | 2006-11-24 |
KR20050118718A (ko) | 2005-12-19 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SPANSION CO.,LTD. Free format text: FORMER OWNER: ADVANCED MICRO DEVICES INC. Effective date: 20070413 Owner name: SPANSION CO., LTD. Free format text: FORMER OWNER: SPANSION CO.,LTD. Effective date: 20070413 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20070413 Address after: California, USA Applicant after: SPANSION LLC Address before: California, USA Applicant before: Spanson Co. Effective date of registration: 20070413 Address after: California, USA Applicant after: Spanson Co. Address before: California, USA Applicant before: ADVANCED MICRO DEVICES, Inc. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160411 Address after: California, USA Patentee after: CYPRESS SEMICONDUCTOR Corp. Address before: California, USA Patentee before: SPANSION LLC |
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CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20091021 |