CN1721014A - 用于植入的医疗装置的低频经皮能量传递系统 - Google Patents
用于植入的医疗装置的低频经皮能量传递系统 Download PDFInfo
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Abstract
一种可植入医疗装置系统有利地利用低频(例如,大约1-100kHz)经皮能量传递(TET)从外部控制模块向可植入医疗装置供电,避免了由于植入装置的金属壳体的涡电流及人体组织而产生的功率消耗,由此允许使用诸如钛这样的金属壳体的更小型植入装置和/或允许更强的TET信号,因而允许在患者体内的更深放置而不会产生过于低效的功率传递。
Description
技术领域
本发明大体上涉及接收经皮能量传递(TET)的可植入医疗装置,尤其涉及优化功率传递的该类植入装置。
背景技术
在TET系统中,电源电连接到诸如人的皮肤这样的物理边界外部的初级线圈。次级线圈设在该边界的另一侧,例如体内。使用皮下装置,初级和次级线圈通常靠近皮肤的外层和内层放置。能量以交变磁场的方式从初级线圈传递到次级线圈。次级线圈将交流磁场中传递的能量转换为用于植入装置的电能,该植入装置作为次级线圈的负载。
在TET系统中,初级和次级线圈放置在边界或皮肤的不同侧。该分离典型地导致了线圈之间的相对距离和空间取向的变化。空间上的变化可以导致到达次级线圈的AC磁场强度的变化,这又导致植入装置中的功率变化和波动。诸如用于医疗用途的植入装置通常依靠微控制器来执行各种功能。这些微控制器需要恒定而可靠的电源。电源中的变化,例如电压或电流的突然改变,可能导致该装置不稳定地工作或者完全失灵。因此传统TET系统所带来的问题在于初级或次级线圈从最佳耦合位置的物理移动都可能导致对输出到植入装置的功率产生不良影响。
从TET的使用中受益的可植入医疗装置的一个例子是人造括约肌,尤其是可调整束胃带,该束胃带包括一中空弹性气囊,其具有围绕患者的食管-胃连接处紧下方的胃部位的若干固定端点。这些气囊可以通过将盐水溶液引入到气囊中而膨胀和收缩。在通常公知的可调整束胃带中,该盐水溶液必须用注射针注射到皮下端口来到达位于皮肤表面之下的该端口。所述端口通过导管与所述束胃带液压连通。尽管有效,但理想的是避免必须用注射针调节流体体积,原因在于这可能导致感染的危险,以及会给患者带来不便和不舒服。
为此,在上面引用的待审申请中,利用植入的注入器装置调节盐水的流动,而不需要对皮下端口进行注射。该系统改为将AC磁通能量从外部初级线圈传递到次级线圈,该次级线圈为腹部中连接到束胃带的植入装置中的泵供电。尽管TET并不需要为装置供电,但是这些装置的长期性受益于TET的使用,并且允许植入装置的尺寸和复杂性减小。而且,这些装置可以在调节时保持无动力,这提供了另外的优点,例如不需要电池。
将诸如心脏起搏器或可调整束胃带这样的医疗装置手术植入到患者皮肤的表面下方以实现多种有益效果是公知的。为了有效地在患者体内工作,这些植入式医疗装置需要可靠而恒定的电源。目前,植入式医疗装置由非可再充电电池或者使用TET系统来为电池充电的可再充电电池供电,或者直接由TET系统供电。为了将足够的功率传递到TET系统的次级线圈以操作植入装置,TET系统通常在100kHz到30MHz以上的频率下工作。在这些较高的频率水平,初级线圈产生的交变电磁场不仅耦合次级线圈,而且耦合靠近它的任何金属物体,包括植入装置的金属壳体。该寄生耦合在植入装置壳体中产生了涡电流。这些涡电流减小了传递到次级线圈的有效功率值,由此增加了从初级线圈驱动植入装置所需的功率值。另外涡电流可以导致金属壳体的发热。植入装置壳体发热超过正常体温2℃可以对植入装置的接受者产生不良影响。在金属物体中产生的涡电流的水平与交变磁场的平方成正比。因此,能量传递信号的频率越大,涡电流就越大,能量传递损失就越多。另外,在100kHz以上操作TET系统需要该系统符合FCC(Federal CommunicationCommittee,联邦通讯委员会)标准。
当TET系统用于植入装置时为了减小涡电流和能量传递损失带来的问题,传统的必然做法是将植入装置封闭在非金属材料中,例如陶瓷外壳,或者将次级线圈放置到植入装置外壳之外并且通过一对伸入外壳中的导线连接该线圈。作为另一选择,TET系统已经被用作为内部植入电池连续充电的低能量涓流充电系统。然而,这些对涡电流问题的解决方案中的任一个要么昂贵、笨重,要么增加了植入装置的复杂性。因此,为了减小为植入装置供电时的涡电流问题,和尽量不涉及到FCC标准,理想的是具有一种在低频下工作的能量传递系统。特别地,理想的是提供一种高功率、低频率TET,其中次级线圈可以封闭在植入装置中而不会有明显的能量损失或形成涡电流。
尽管诸如为给电池再充电的植入装置的TET供电方式通常是公知的方法,但是在诸如可调整束胃带这样的人造括约肌系统中使用TET遇到了许多挑战。可调整束胃带对病理性肥胖患者很有益。为植入装置提供一个安全的皮下附着位置以减小带来的不适通常意味着让植入装置位于皮肤深层或脂肪组织以下。因此使用TET中的主要挑战在于通过皮组织的厚层在初级和次级线圈之间传递电磁能,该厚层减小了传递到植入装置的有效功率值。
因此,强烈需要通过患者皮肤到达医疗植入装置的密封外壳中且无能量损失的改进型TET能量传递系统。
发明内容
本发明通过提供一种有利地在1-100kHz下传输的经皮能量传递(TET)系统克服了现有技术的上述和其它的缺点,由此实现了可以更有效地穿透诸如植入装置的金属壳体或者人体组织这样的物理边界的电磁模式,而不会由于涡电流而产生过多的功率损失,并由此避免了发热。
在本发明的一个方案中,经皮能量传递(TET)系统具有为外部初级谐振电路提供能量的外部初级电源,所述外部初级谐振电路具有与电容电连接形成谐振储能电路的初级线圈,该谐振储能电路具有1-100kHz范围的峰值共振,传输TET功率到内部次级谐振电路,该内部次级谐振电路包括与电容电连接形成谐振储能电路从而为电负载供电的次级线圈,所述谐振储能电路具有1-100kHz的峰值共振。
从附图及其说明可以明显看出本发明的这些和其它目标和优点
附图说明
结合到说明书中并且作为说明书一部分的附图示出了本发明的实施例,其与上述本发明的概括描述以及下述实施例的具体描述一起用于解释本发明的原理。
图1是显示本发明的典型能量传递系统的结构图;
图2是显示本发明的低频TET系统的结构图;
图3是次级谐振电路的第二实施例的结构图;和
图4是初级和次级谐振电路的增益-频率响应的曲线图。
具体实施方式
现在具体参考附图,在所有附图中相同的数字表示相同的元件,图1示出了本发明的用于植入装置22的经皮能量传递(TET)系统20。如图1所示,TET系统20包括初级电路24,该初级电路包括位于物理边界28外部的电源26。边界28可以是人或者动物的皮肤,例如在植入式医疗装置的情况下,或者取决于TET系统20的特定应用可以是任何其它类型的无生命材料或组织。初级电路24也可以包括初级谐振电路30,该谐振电路电耦合到电源26以在指定功率信号频率下共振。交变磁场32响应电源26提供的电信号在初级线圈30中产生。
TET系统20也包括与初级谐振电路30成分隔关系的次级谐振电路34。次级谐振电路34在植入装置22中位于与初级谐振电路30相反的边界28的一侧。次级谐振电路34通过交变磁场32电耦合到初级谐振电路30,该磁场由图中从初级谐振电路30发出并且朝次级谐振电路34传播的箭头表示。次级谐振电路34从磁场32产生电信号36。信号36由滤波器40整流并且输入到植入负载42以操作植入装置22。
可以从改进型TET供电和遥测系统受益的可植入双向注入装置公开于申请日为2004年5月28日的四个待审且共同持有的专利申请中,所述申请的全部内容结合于此以作参考,其名称为(1)“用于液压控制可调整束胃带的压电驱动式气囊式注入器”,发明人为WilliamL.Hassler,Jr.,序列号为10/857,762;(2)“用于可调整束胃带的液压控制的金属气囊式位置反馈”,发明人为William L.Hassler,Jr.,DanielF.Dlugos,Jr.,Rocco Crivelli,序列号为10/856,971;(3)“用于遥控式束胃带使用的热力驱动式可逆注入器泵”,发明人为William L.Hassler,Jr.,Daniel F.Dlugos,Jr.,序列号为10/857,315;(4)“用于液压控制可调整束胃带的带有体积制动的双向注入器泵”,发明人为WilliamL.Hassler,Jr.,Daniel F.Dlugos,Jr.,序列号为10/857,763。
图2提供了本发明的能量传递系统20的更详细的示意图。如图2所示,初级谐振电路30包括调谐储能电路,该调谐储能电路具有由一个或多个与电感线圈46并联连接的电容器44组成的电容。电容44和线圈46被选择成当连接到电源26时在特定频率下产生共振。为了将功率传递到次级谐振电路34而不产生过多的涡电流,初级谐振电路30被设计成在低频级下工作。在该讨论中,术语“低频”或“低频级”表示低于100千赫(kHz)的频率。为了在低频级下传递足够的功率以驱动植入装置22,选择合适的电容器44和线圈46,使得电路30的Q或品质因素最大化,从而从谐振电路30产生高增益。在这里所述的实施例中,选择合适的电容器44和线圈46,使得Q值超过100。
为了在低信号频率下获得高Q值,电容器44被选择成在最小等效串联电阻(ESR)下提供高电压。用于获得高压/低ESR性能的合适类型的电容器的一个例子是玻璃上芯片(chip-on-glass)(COG)介电电容器。另外,为了最大化初级谐振电路30的Q值,线圈46被形成为使得线圈阻抗最小化,因而使电路中的功率损失最小化。在本发明中使线圈阻抗最小化的一个方法是用绞合线形成线圈46。绞合线由独立的薄膜绝缘线组成,这些薄膜绝缘线被编织在一起以形成一个导体。绞合线可以使在线圈46中产生的功率损失最小化是由于集肤效应,或者说是射频电流集中到导体表面的趋势。除了绞合线以外,其它类型的具有高电流,低功率损失性能的导线也可以用于本发明中的初级线圈46而不超出本发明的范围。低传递信号频率,高电压电容和高电流/低功率损失线圈的组合使用能够使初级谐振电路30传递足够的功率以驱动植入装置,例如1-4瓦的功率。
如图2所示,次级谐振电路34包括次级线圈50,该次级线圈与一个或多个电容器52串联以形成串联调谐储能电路。电容器52可以是能够使储能电路在包含初级电路30的共振频率的频率范围内共振的任何类型的电容器。类似地,线圈50可以是产生最小阻抗同时有效地耦合初级谐振电路30以传递足够的功率用于操作负载42的任何类型的导体。尽管可以理解能够使用更高的Q值,但是为了耦合更大范围的共振频率,和不需要为特定的初级谐振电路单独地调谐次级谐振电路,次级谐振电路34被调谐成具有比初级谐振电路30更低的Q值和更高的带宽。
图3显示了TET系统20的另一形式,其中次级线圈50被一对并联的电感线圈54,56代替。线圈54,56与电容器52串联以形成串联调谐储能电路58,该电路与初级谐振电路30耦合以将功率传递到负载42。用并联线圈54,56代替次级线圈50增加了次级谐振电路拦截的磁通量32,因而增加了供给负载42的功率。
图4提供了初级谐振电路30和次级谐振电路34的增益-频率响应的曲线图。如图4所示,如陡曲线60所表示的,初级谐振电路30具有很大的频率选择性,由此在以共振频率62为中心的狭窄频率范围上产生了高Q值和低功率水平。相反地,如圆曲线64所表示的,次级谐振电路34具有明显比初级谐振电路30更低的Q值,并且具有更低的频率选择性。次级谐振电路34的更宽带宽使该电路对初级电路30的共振频率的变化不敏感,因此能够使次级谐振电路34耦合一个或多个不同的初级电路而不必专门地调谐到初级电路的共振频率62。
在本发明的一个典型实施例中,在实验上产生了一种TET系统,该系统具有1.6-1.7千赫的共振频率范围和大于100的Q值。在该实验电路中,具有5.25英寸外径的初级线圈46由一百零二(102)匝的绞合线组成。该绞合线由100股单独绝缘的三十(30)号(gauge)线圈线组成。初级线圈与9.4微法的电容并联。该电容是高电压,高电流,低ESR的COG介电电容器。另外,如上述作为参考的名称为“带有高纵横比铁氧体磁心的经皮能量传递初级线圈”的申请中所述,铁氧体磁心与初级线圈46结合在一起。
次级谐振电路由并联的两个线圈组成。每个线圈由325匝三十四(34)号(gauge)线圈线组成。每个线圈具有2.4英寸的外径。并联的次级线圈与1.1微法的电容串联以产生具有明显比初级谐振电路更低的Q值的串联调谐储能电路。在该实验电路中,次级线圈具有大约十(10)到十五(15)的Q值。该实验TET系统在初级和次级电路之间大约传输1瓦的功率。次级谐振电路的更低Q值能够使电路与初级谐振电路耦合而不用专门调谐和匹配初级电路。该典型电路示出了一种结构,通过该结构可以实现本发明。也可以利用使初级谐振电路的Q值最大化的其它电路结构和元件来获得根据本发明的低频TET功率传递而不超出本
发明的范围。
尽管通过几个实施例的描述举例说明了本发明,以及尽管相当详细地描述了所列举的实施例,但是本申请的目的并非是要将附加权利要求的范围限制或以任何方式限定到该细节。对于本领域的熟练技术人员来说其它优点和改进是显而易见的。
Claims (6)
1.一种经皮能量传递系统,包括:
外部初级电源;
由所述初级电源提供能量的外部初级谐振电路,其包括与电容电连接形成谐振储能电路的初级线圈,该谐振储能电路具有100kHz或以下的峰值共振;
内部电负载;以及
内部次级谐振电路,其包括与电容电连接形成谐振储能电路的次级线圈,该谐振储能电路具有100kHz或以下的峰值共振,所接收的经皮能量传递功率为所述内部电负载供电。
2.根据权利要求1的谐振储能电路系统,其中所述内部次级谐振电路进一步包括一对物理并联和电并联的次级线圈。
3.根据权利要求1的谐振储能电路系统,其中所述初级线圈包括多匝绝缘的绞合线。
4.根据权利要求1的谐振储能电路系统,其中所述电容包括玻璃上芯片介电电容器。
5.根据权利要求1的谐振储能电路系统,其中所述次级线圈包括绞合线。
6.根据权利要求1的谐振储能电路系统,进一步包括所述次级谐振电路和所述电负载之间的整流滤波装置。
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CN103532637B (zh) * | 2013-10-09 | 2015-09-30 | 北京理工大学 | 面向植入式电子装置的低衰减信号耦合与传输方法 |
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Also Published As
Publication number | Publication date |
---|---|
RU2005119616A (ru) | 2006-12-27 |
JP2006006950A (ja) | 2006-01-12 |
CA2510014C (en) | 2016-01-26 |
AU2005202383A1 (en) | 2006-01-12 |
RU2440832C2 (ru) | 2012-01-27 |
KR20060049692A (ko) | 2006-05-19 |
EP1609503A1 (en) | 2005-12-28 |
US20050288741A1 (en) | 2005-12-29 |
US7599743B2 (en) | 2009-10-06 |
BRPI0502430B1 (pt) | 2018-03-20 |
CA2510014A1 (en) | 2005-12-24 |
BRPI0502430B8 (pt) | 2021-06-22 |
MXPA05006881A (es) | 2006-01-11 |
BRPI0502430A (pt) | 2006-02-07 |
KR101215846B1 (ko) | 2012-12-31 |
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