CN1706040A - 非接触id卡及类似物和其制造方法 - Google Patents

非接触id卡及类似物和其制造方法 Download PDF

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CN1706040A
CN1706040A CNA2003801017160A CN200380101716A CN1706040A CN 1706040 A CN1706040 A CN 1706040A CN A2003801017160 A CNA2003801017160 A CN A2003801017160A CN 200380101716 A CN200380101716 A CN 200380101716A CN 1706040 A CN1706040 A CN 1706040A
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electrode
resin
contact
card
analog
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秋田雅典
佐胁吉记
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Toray Engineering Co Ltd
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Abstract

本发明提供具有实用的电气特性的低价的非接触ID卡及类似物,本发明的非接触ID卡及类似物,由在基材上形成了天线电路基板和在搭载了IC芯片的基材上形成了与该IC芯片连接的扩大电极的嵌入式基板构成,在使所述天线电极和所述扩大电极直接接合的状态将两个基板层叠的非接触ID卡及类似物中,所述扩大电极作为用含热可塑性树脂的导电性树脂形成的树脂电极而设置。

Description

非接触ID卡及类似物和其制造方法
技术领域
本发明涉及非接触ID卡及类似物和其制造方法。
背景技术
传统的在天线电路基板上安装有IC芯片的所谓非接触ID卡及类似物或非接触标签等(以下,将这一类的产品总称为「非接触ID卡及类似物」),已知有各种型号的产品。
作为其中的一例,有由在基材上形成天线的天线电路基板,和在搭载有IC芯片的基材上形成连接至该IC芯片的电极的扩大金属电极的嵌入式基板构成,且用导电性粘接材料接合该天线的金属电极和该扩大金属电极并使两基板(天线电路基板和嵌入式基板)层叠接合的结构的非接触ID卡及类似物(国际公开第01/62517号小册子(图1,10))。
但是,该公知技术中所用的导电性粘接材料是具有使导电性粒子分散在树脂中的粘接性或粘着性的膏状粘接剂或薄膜状粘接剂。因而,层叠接合两基板的时候,将该导电性粘接材料涂敷或粘贴在任何一方的电极上,然后,将它与另一方的电极位置对准并层叠两基板后,用加热工具进行加压加热,使两电极间接地接合(使该导电性粘接材料夹在一方的金属电极与另一方的金属电极之间,将两者接合成一体化的状态,下同。)
但是,在使用上述的膏状导电性粘接材料时,对于涂敷在电极上的该膏状导电性粘接材料,存在着所谓必须要在进行规定的干燥或半硬化处理之后与另一方的电极位置对准来层叠两基板的问题。
另外,使用上述的薄膜状导电性粘接材料时,由于在已经干燥或半硬化的状态下被层叠在保护膜上,存在着将它粘贴在电极上之后,虽然立即与另一方的电极进行位置对准可以层叠两基板,可是,在刚刚粘贴之后,必须从被粘贴在电极上的导电性粘接材料上剥离保护膜的问题。
这样一来,由于在前一方法中,需要有导电性粘接材料的涂敷工序和干燥或半硬化工序,在后一方法中,需要有导电性材料的粘贴工序和薄膜剥离工序,带来了由此引起的设备费用的增大和生产效率的下降等问题,妨碍了非接触ID卡及类似物的制造成本的降低。
另外,作为另一个例子,可以举出不使用上述那样的导电性粘接材料的例子,但在这种情况下,通常是通过使天线基板的基材与嵌入式基板的基材粘结,层叠两基板使天线的金属电极与扩大金属电极接触。但是,这时候,只不过仅使两电极处于接触状态,由于没有进行接合至达到一体化的状态,与用导电性粘接材料接合至一体化的状态的上述「间接的接合」的情况相比较,电气特性不稳定,而且,由于其波动大,存在着不能提供实用的问题。
再者,已经知道设置树脂电极来代替天线的金属电极或扩大金属电极(上述的国际公开01/62517号小册子的第10页第25行~第11页第4行,以及第11页第19行~第21行),而这样的树脂电极是将使导电性粒子分散在液状的热硬化性树脂中构成的导电性树脂膏涂敷或印刷在基材上形成的,在形成了这样的树脂膏电极(指用硬化前的树脂膏形成的电极,下同。)的情况下,虽然可以加压加热两电极来进行直接接合(在一方的电极与另一方的电极之间不用使粘接材料夹在其间,将两电极接合成一体化的状态,下同。),但是,另一方面,由于热硬化需要比较长的时间,使生产率显著降低,在实际的生产中不能令人满意。
发明的公开
本发明是鉴于上述各种现有技术中存在的缺陷而作的发明,本发明的目的在于,提供由在基材上形成天线的天线电路基板和在搭载有IC芯片的基材上形成被连接至该IC芯片的电极的扩大电极的嵌入式基板构成的、在使上述的天线电极与上述的扩大电极直接接合的状态下层叠两基板的结构的非接触ID卡及类似物的领域中具有实用的电气特性的低价的非接触ID卡片,以及提供得到那样的非接触ID卡及类似物合适的制造方法。
为了完成上述课题,本发明有以下(1)~(7)的结构。
(1)一种非接触ID卡及类似物,其特征在于:由在基材上形成天线的天线电路基板和在搭载有IC芯片的基材上形成被连接至该IC芯片的电极的扩大电极的嵌入式基板构成,在使上述的天线的电极与上述扩大电极直接接合的状态下层叠两基板的非接触ID卡及类似物中,上述扩大电极作为用含有热可塑性树脂的导电性树脂所形成的树脂电极来设置。
(2)如上述(1)所述的非接触ID卡及类似物,其特征在于:所述热可塑性树脂的分子链的一部分是用反应性基团改性的。
(3)如上述(1)或(2)所述的非接触ID卡及类似物,其特征在于:所述IC芯片以埋设方式搭载在所述基材中。
(4)一种非接触ID卡及类似物的制造方法,其特征在于:在将在基材上形成天线的天线电路基板和在搭载有IC芯片的基材上形成被连接至该IC芯片的电极的扩大电极的嵌入式基板层叠、使上述天线的电极与上述扩大电极位置对准后、在加压加热并将两电极彼此直接接合的非接触ID卡及类似物的制造方法中,上述扩大电极作为将含有热可塑性树脂的导电性树脂膏涂敷在上述基材上构成的树脂电极来设置。
(5)如上述(4)所述的非接触ID卡及类似物的制造方法,其特征在于:作为上述热可塑性树脂,采用以反应性基团改性该热可塑性树脂的分子链的一部分的树脂。
(6)如上述(5)所述的非接触ID卡及类似物的制造方法,其特征在于:上述IC芯片以埋设方式搭载在上述基材中。
(7)如上述(4)、(5)或(6)所述的非接触ID卡及类似物的制造方法,其特征在于:上述导电性树脂膏的涂敷用丝网印刷法进行。
依据上述的本发明的非接触ID卡及类似物,由在基材上形成天线的天线电路基板和在搭载有IC芯片的基材上形成被连接至上述IC芯片的电极的扩大电极的嵌入式基板构成,在层叠两基板、使该天线的电极和上述扩大电极接合的非接触性ID卡及类似物中,由于该扩大电极是作为用含有热可塑性树脂的导电性树脂形成的树脂电极来设置的,就可以直接接合两电极,于是,可以省掉上述的导电性粘结材料的涂敷工序和干燥或半硬化工序。
另外,依据上述的本发明的非接触ID卡及类似物的制造方法,由在基材上形成天线的天线电路基板和在搭载有IC芯片的基材上形成连接至上述IC芯片的电极的扩大电极的嵌入式基板构成,当制造层叠两基板、使该天线的电极与上述扩大电极接合的非接触ID卡及类似物的时候,由于扩大电极是作为将含有热可塑性树脂的导电性树脂膏涂敷在IC芯片搭载基材上形成的树脂电极来设置的,就可以将两电极相互直接接合,于是,可以省掉上述的导电性粘接材料的粘贴工序和薄膜剥离工序,同时可使所得到的非接触ID卡及类似物的电气特性恒定,因此可以谋求设备费用的降低和生产效率的提高等,可以得到接合强度充分且具有优良的电气特性的低价的非接触ID卡及类似物。
附图的简单说明
图1是用以说明本发明的非接触ID卡及类似物的概略模型平面图。
图2是说明本发明的非接触ID卡及类似物结构的概略模型剖面图,是图1的X-X处的剖面图。
图3是用以说明可用于本发明的非接触ID卡及类似物的嵌入式基板的结构的局部概略剖面图。
图4是用以说明可用于本发明的非接触ID卡及类似物的嵌入式基板的结构的示图,是图3的概略平面图。
图5是表示可用于本发明的非接触ID卡及类似物的梳齿形天线的概略平面图。
图6是表示可用于本发明的非接触ID卡及类似物的嵌入式基板的另一例的纵向剖面图。
图7是表示可用于本发明的非接触ID卡及类似物的嵌入式基板的其它例的纵向剖面图。
符号的说明
1:本发明的非接触类ID卡及类似物
2:天线电路基板
3a、3b:金属天线电极
4:IC芯片
6:天线
7:嵌入式基板
9:天线电路基板的基材(树脂片)
10:嵌入式基板的基材(热可塑性树脂片)
11a、11b:树脂扩大电极
12a、12b:金属电极
13a、13b:树脂扩大电极11a、11b的细引线部
15a、15b:层叠导体
16:绝缘层
17:绝缘层
本发明的最佳实施例
有关本发明的非接触ID卡及类似物由层叠天线电路基板和嵌入式基板构成,其结构的一例示于图1和图2。
也就是说,图1是用以说明有关本发明的非接触ID卡及类似物的概略模型平面图,图2是图1的X-X剖面图。
如图1、图2中所示,本发明的非接触I D卡及类似物1是直接接合下侧的天线电路基板2的金属电极3a、3b(以下称为金属天线电极)和上侧的嵌入式基板7的树脂扩大电极11a、11b,亦即,天线电极3a、3b和树脂扩大电极11a、11b相互面接触,两电极接合成一体化后的状态。
上述的天线电路基板2是在构成基材9的树脂片上设有天线6和与其连接的金属天线电极3a、3b所构成的部件。
另外,嵌入式基板7是在构成基材10的热可塑性树脂片上附加了IC芯片4后的部件,理想状态是用埋设方式构成的部件。亦即,最好如图3所示,IC芯片4的电路表面与基材10的上表面基本成同一平面地埋设。
再者,如图所示,树脂扩大电极11a、11b从基材10的上表面起延伸设置至IC芯片4的电路表面上。另外,如平面图的图4所示,在树脂扩大电极11a、11b的细引线部13a、13b上,连接IC芯片4的金属电极12a、12b。该IC芯片4的金属电极12a、12b例如是铝电极。金属天线电极3a、3b同样例如是铝电极。
另一方面,树脂扩大电极11a、11b用含热可塑性树脂的导电性树脂形成,这是本发明最大的要点。所谓「用含热可塑性树脂的导电性树脂形成」是例如用含有热可塑性树脂的导电性树脂膏涂敷或印刷在基材10上,通过使溶剂挥发,使膏干燥或半硬化而形成。该树脂扩大电极不一定必需全部用含热可塑性树脂的导电性树脂来形成,但至少,该树脂扩大电极的一部分表面要用含热可塑性树脂的导电性树脂构成。
亦即,在上述(1)中,所谓「上述扩大电极作为用含热可塑性树脂的导电性树脂形成的树脂电极来设置」,意思是「将扩大电极的最低限度的表面用含热可塑性树脂的导电树脂设置形成的扩大电极」。因而,在扩大电极的表面上,含热可塑性树脂的导电性树脂也可以作为例如被膜存在,而母材不一定要用含有热可塑性的导电性树脂来形成。
如上所述,理想情况是,IC芯片4埋设在基材10中,用印刷法例如丝网印刷法容易地形成树脂扩大电极11a、11b,使其与IC芯片4的金属电极12a、12b连接。
作为含有上述热可塑性树脂的导电性树脂膏,可以使用例如在将热可塑性树脂溶解在溶剂中的同时使导电性粒子分散在其间制成的膏剂,或者使用在热可塑性树脂溶解在溶剂中的同时将热硬化性树脂溶解在溶剂中,并使导电性粒子分散在它们的混合物中制成的膏剂等。
由于这样的热可塑性树脂对加热或冷却能在短时间内起反应而软化或固化,可以在极短的时间内进行加压加热式的电极接合。
有关本发明的非接触ID卡及类似物可以通过以下方法来制造,例如,将金属天线电极3a、3b与树脂扩大电极11a、11b进行位置对准,层叠天线电路基板2和嵌入式基板7后,通过加压加热直接接合两电极。
这时,例如,如果对下侧的天线电路基板2,从其上方使加热工具下降并进行加压加热,则由于形成树脂扩大电极11a、11b的热可塑性树脂被软化或熔融,由于它融着在天线电极3a、3b上,可以迅速且良好地直接接合两电极。通过这样的直接接合,金属天线电极3a、3b与树脂扩大电极11a、11b被牢固接合成面接触的一体化状态,因此电气特性恒定而可供实用。
在本发明中,只限于用含热可塑性树脂的导电性树脂所形成的树脂电极来设置扩大电极,而天线电极可作为金属电极或树脂电极之中的任何一种来设置。
更具体地说,也可以设置树脂天线电极代替金属天线电极3a、3b,这样也可以得到与设置金属天线电极3a、3b以及树脂扩大电极11a、11b的上述例相同的效果。
在本发明中,将扩大电极而不是天线电极作为用含热可塑性树脂的导电性树脂形成的树脂电极来设置的理由是,因为通常扩大电极的面积比天线电极更大,可以良好地涂敷或印刷导电性树脂膏剂的需要量(可以得到实用水平的接合强度的量)而获得理想的效果。
设置金属天线电极3a、3b和树脂膏扩大电极时,将天线电路基板2和嵌入式基板7层叠、使金属天线电极3a、3b和树脂扩大电极位置对准后,通过加压加热来直接接合两电极即可。在设置树脂天线电极及树脂扩大电极时也一样。在使用由反应性基团改性的热可塑性树脂的场合,通过增加投入到硬化炉处理的加热硬化工序,可以更强固地进行接合。
上述的导电性树脂膏,可仅用热可塑性树脂构成,也可将热可塑性树脂与热硬化性树脂混合使用。
作为仅使用热可塑性树脂情况的具体例,仅将热可塑性树脂(例如,聚酯系树脂等)在乙醇、二甲苯或甲苯等溶剂中溶解,使导电性粒子(例如银粒子)分散在其中,例如有在溶剂中溶解以重量比80%以上的银粉和20%以下的热可塑性树脂的混合物后的产物。通过使用这样的高温熔化系导电性树脂,可以用更短的时间进行加压加热式接合。
另外,作为将热可塑性树脂和热硬化性树脂混合使用时的具体例,例如有将热可塑性树脂(例如聚酯系树脂等)在溶剂中溶解的同时,将热硬化性树脂(例如环氧树脂等)溶解在溶剂中,使银粒子等分散在该混合物中,或将高分子量的热可塑性树脂(例如聚酯系列树脂等)的分子链的一部分用环氧树脂系等的热硬化性的反应性基团改性,将这样的树脂溶解在溶剂中,再使银粒子等的导电性粒子分散在其中。
该类型的导电性树脂用加热工具对电极接合部进行加压加热并暂时性地接合(临时接合)成导通状态之后,再通过常规的热硬化处理,便可得到可靠性足够的导通状态的接合。
作为其它具体例,例如有将用环氧树脂改性后的高分子量的热可塑性树脂用低分子量硬化剂交联的粘接剂类型,这就是所谓具有高温熔化的特性的、保存稳定性优越的单一组分的热硬化型粘接剂。由于形成稀疏的交联结构,得到剥离强度与剪切强度的平衡,从而显示出优良的耐久性。
在混合热可塑性树脂和热硬化性树脂后的混合物中,热可塑性树脂的混合比例是相对于将两种加在一起后的全体树脂的重量比,理想情况是25%~95%,更理想的是75%~95%。
因而,将这样的混合物溶解在溶剂中构成的导电性树脂膏,具有在热可塑性和热硬化性中以热可塑性为主、热硬化性为辅的特性。
作为热可塑性树脂,除了上述的聚酯树脂以外,还可举出如:聚氨酯树脂、苯氧基树脂、丙烯树脂、聚氯已酸树脂、聚丁二烯等。另外,作为改性热可塑性树脂的分子链的一部分的反应性基团,可以使用氢氧基、氨基、羧基、苯氧基、异氰酸酯基、块异氰酸酯基、缩水甘油基、(偏)烯丙酰基等,其中,氢氧基、氨基、羧基、异氰酸酯基、块异氰酸酯基、缩水甘油基特别理想。
另外,作为导电性粒子,可以举出:银粒子、铜粒子、金粒子、白金粒子等贵金属粒子,镍粒子、铝粒子、碳粒子或在铜和镍粒子上电镀银等贵金属后的粒子。这些导电性粒子可以是单独或2种以上的混合物。银粒子、在铜或镍粒子上电镀银后的粒子在可靠性方面更理想。形状也可以是粒状、鳞片状、片状、树枝状等的任何形状,而理想的是鳞片状。粒径的理想数值是0.1μm~100μm,更理想是0.1μm~20μm。
溶剂可以举例如:在酯系中有醋酸丁酯、醋酸异丁酯等,在酮系中有甲基异丁酮、环乙酮、乙酰丙酮醇等,在酯系中有乙基溶纤剂、丁基溶纤剂、乙基溶纤剂醋酸纤维、丁基溶纤剂醋酸纤维、乙基卡必醇、丁基卡必醇等,在碳氢化合物系中有甲苯、二甲苯和各种芳香族碳氢化合物的混合系溶剂。这些溶剂也可以是单独或2种以上的混合物。
天线电路基板2的基材9也可以是作为绝缘性的单体材料的树脂片或纸或无纺布等,同时,嵌入式基板7的基材10可以是作为绝缘性的单体材料的树脂片或含有树脂片的层叠材(例如,树脂片与纸的层叠材等)中的任意一种。这样的树脂片,最好选择热可塑性的材料。
另外,嵌入式基板7的基材10的IC芯片4的搭载方式不限于上述的埋设,也可以是不埋设的一般方式的搭载,作为基材10的树脂片,最好由热可塑性树脂构成,且最好将IC芯片4埋设在其中而得到薄型化的面。
如上所述,在仅将扩大电极,或将天线电极和扩大电极这两个电极用含热可塑性树脂的导电性树脂形成的树脂电极来构成时,最好用丝网印刷来形成。但并不限于此,也可用其它方法来形成。
作为两电极的接合条件,在用仅含聚酯系热可塑性树脂的导电性树脂膏只形成扩大电极时,理想的加压力是每2.5mm×2.5mm的面积上加10g~20Kg,更理想的数值是50g~5Kg。具体地说,在加压工具的温度为120℃时,可以用0.5秒~5秒的加压时间接合两电极。关于该时两电极的接合电阻,在经过60℃、93%RH的高温高湿试验、-40℃~80℃的冷热循环试验后仍可以合格。
IC芯片4的电极12a、12b除了上述的铝电极以外,也可以是铜电极、在铝电极的表面上进行防氧化处理(在镍、钛、钼等的镀层上形成镀金层的处理)的电极等,且为了可靠进行与树脂扩大电极的连接,最好形成下阻挡金属层(UBM层)。金属天线电极也与上述的IC芯片4的电极12a、12b一样,也可以是铝电极以外的铜电极,在铝电极的表面上进行防氧化处理(在镍、钛、钼等的镀层上形成镀金层的处理)的电极等。
另外,将嵌入式基板7的基材10代之以用热可塑性树脂片构成,也可以用热可塑性树脂片构成天线电路基板2的基材9。总之,也可以用热可塑性树脂片来构成嵌入式基板7或天线电路基板2的任何一方或两方的基材。
关于上述的热可塑性树脂片,除了共聚聚对苯二甲酸乙二醇酯(PET-G)以外,也可以由例如,聚对苯二甲酸乙二醇酯(PET)、聚砜(PSF)、聚醚砜(PES)、液晶聚合物(LCP)或聚醚乙基酮(PEEK)等构成。
关于天线电路基板2的天线6,也可采用螺旋形、梳齿形(图5)等的任何形式,也可在电极接合部的空隙13处充填绝缘材料14。
IC芯片4的埋设并不限定于上述方式,也可以按如图6、图7所示的方式埋设。在图1的埋设中不形成绝缘层,而在图6、图7的埋设中分别形成绝缘层16、17。
图示的形成了绝缘层16的IC芯片4要预先准备,而且,将它插入到形成在嵌入式基材10中的锥形凹部并用粘接剂固定。上述的锥形凹部的形成方法,可以是在嵌入式基材10上推压加热后的阳模来形成的方法等中的任何方法。
再者,如图所示,按预定的图案形成绝缘层16,使电极12a、12b露出。这可以通过在涂敷光致抗蚀剂,使其覆盖电极12a、12b并使其干燥后,用光掩模仅对电极12a、12b的部分曝光、显影来实现。因而,在电极12a、12b上充填热硬化性或热可塑性的导电性树脂膏剂,可以形成层叠导体15a、15b,然后,形成树脂扩大电极11a、11b,使其与层叠导体15a、15b连接。
另一方面,图7的绝缘层17可以在IC芯片4插入至嵌入式基材10的锥形凹部并用粘结剂固定之后,在由IC芯片4和基材10形成的平面(不形成台阶而平坦地构成的上表面)上形成。这里,树脂扩大电极11a、11b与基材10被绝缘层17全面地绝缘。因而,图7的结构具有比图6的埋设更优良的绝缘性。
工业上利用的可能性
依据如上说明的本发明,在进行由在基材上形成天线的天线电路基板和在搭载有IC芯片的基材上形成连接至上述IC芯片的电极的扩大电极的嵌入式基板构成的、以直接接合上述天线电极和上述扩大电极的方式层叠两基板而形成的非接触ID卡及类似物的制造时,由于可以简单且正确地相对于天线电路基板的天线电极进行扩大电极的位置对准,IC芯片被小型微细化,可以防止非接触ID卡及类似物的制造成本(主要是安装试验方面的成本)的增加。因而,在非接触ID卡及类似物的生产中,本发明是有用的。

Claims (7)

1.一种非接触ID卡及类似物,其特征在于:
由在基材上形成天线的天线电路基板和在搭载有IC芯片的基材上形成了连接至所述IC芯片的电极的扩大电极的嵌入式基板构成,在直接接合所述天线电极和所述扩大电极的状态下层叠两基板而成非接触ID卡及类似物中,所述扩大电极作为用含热可塑性树脂的导电性树脂形成的树脂电极来设置。
2.如权利要求1所述的非接触ID卡及类似物,其特征在于:所述热可塑性树脂的分子链的一部分经反应性基团改性。
3.如权利要求1或2所述的非接触ID卡及类似物,其特征在于:所述IC芯片被埋设在所述基材中。
4.一种非接触ID卡及类似物的制造方法,其特征在于:将在基材上形成天线的天线电路基板和在搭载有IC芯片的基材上形成了被连接至IC芯片的电极的扩大电极的嵌入式基板层叠,使所述天线电极与所述扩大电极位置对准,在将两电极加压加热并直接接合的非接触ID卡及类似物的制造方法中,所述扩大电极作为将含热可塑性树脂的导电性树脂膏涂敷在所述基材上而构成的树脂电极来设置。
5.如权利要求4所述的非接触ID卡及类似物的制造方法,其特征在于:作为所述热可塑性树脂,使用该热可塑性树脂的分子链的一部分经反应性基团改性的树脂。
6.如权利要求5所述的非接触ID卡及类似物的制造方法,其特征在于:所述IC芯片以埋设方式搭载在所述基材内。
7.如权利要求4、5或6所述的非接触ID卡及类似物的制造方法,其特征在于:所述导电性树脂膏的涂敷用丝网印刷法进行。
CNA2003801017160A 2002-10-24 2003-10-23 非接触id卡及类似物和其制造方法 Pending CN1706040A (zh)

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