CN1544985A - Uniform multi-domain perpendicular direction matching half penetrative half reflex thin film transistor liquid crystal display - Google Patents
Uniform multi-domain perpendicular direction matching half penetrative half reflex thin film transistor liquid crystal display Download PDFInfo
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- CN1544985A CN1544985A CNA2003101154278A CN200310115427A CN1544985A CN 1544985 A CN1544985 A CN 1544985A CN A2003101154278 A CNA2003101154278 A CN A2003101154278A CN 200310115427 A CN200310115427 A CN 200310115427A CN 1544985 A CN1544985 A CN 1544985A
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Abstract
The invention is a structure of semipermeable semireflecting thin film transistor liquid crystal display (TFT-LCD) with uniform multizone vertical allocation mode in the penetrating region. With the help of making different configuration on two or more transparent electrode patterns with radioactive fine slits, it balances the acting force that the slope reverses the peripheral liquid crystal molecules at the juncture between the reflecting and penetrating regions of unit pixel structure of the semipermeable semireflecting TFT-LCD as well as on the boundary between the penetrating region and the scanning line, thus able to form multizone vertical allocation (MVA) mode of uniformly arranged liquid crystal molecules, making the LCD have wider visual angle and heightening the reacting speed.
Description
Technical field
The invention relates to and a kind ofly have uniform multi-zone vertical alignment nematic pattern (Multi-Domain Vertical Alignment Mode at penetrating region; MVA) semi-penetration, semi-reflective Thin Film Transistor-LCD, especially refer to a kind of penetrating region at the semi-penetration, semi-reflective Thin Film Transistor-LCD, plural transparent electrode pattern is formed help Liquid Crystal Molecules Alignment to dispose uniformly, so that it is stable that the liquid crystal in zone between two transparent electrode patterns is pointed to, to promote reaction velocity.
Background technology
Quick progress along with the thin film transistor (TFT) manufacturing technology, possessed the LCD of advantages such as frivolous, power saving, no width of cloth ray, a large amount of is applied in the various electronic products such as counter, palm PC (PDA), wrist-watch, notebook computer, digital camera and mobile phone.Add the positive input research and development of industry and adopt the production equipment that maximizes, the production cost of LCD is constantly descended, more make the demand of LCD heighten.
Thin Film Transistor-LCD (TFT-LCD) is to utilize the characteristic of liquid crystal molecule rotation polar biased light direction and birefraction to reach the effect that shows light and shade, this characteristic is relevant with the angle of incident light, therefore LCD just has the problem at visual angle in essence, along with audience's angle difference different display qualities is arranged, the visual angle big contrast of seeing of healing is lower, along with the development that LCD maximizes, promote each visual angle contrast and then more seem important with color homogeneity.
For application and the quality that further expands LCD, the research emphasis of current LCD mainly concentrates on the reaction time that how to increase the visual angle and shorten screen.Desire to achieve the above object, known technology has been developed multiple wide viewing angle technology, for example transverse electric field handoff technique (In-PlaneSwitching; IPS), boundary electric field handoff technique (Fringe Field Switching; FFS) and multi-zone vertical alignment nematic technology (Multi-Domain Vertical Alignment; MVA).
Penetrating region at semi-penetration, semi-reflective Thin Film Transistor-LCD (transflective TFT-LCD), utilization shown in Figure 1A the centrosymmetric transparent electrode pattern 13 with radial slots (fine slit) 131 and form an electrode broken hole (hole) or dielectric medium projection (protrusion) 211 (shown in Figure 1B) in the centre of the upper substrate transparency electrode 21 that corresponds to symmetry transparent electrode pattern 13 positions, this center, the liquid crystal that forms multi-zone vertical alignment nematic pattern (MVA) distributes.Wherein symmetry transparent electrode pattern 13 in this center can be an ITO material and constitutes, and its slit can form via etching, and this transparency electrode 21 is generally the ITO electrode.Fig. 1 C is the vertical view after this upper substrate transparency electrode 21 makes up with this center symmetry transparent electrode pattern 13, when the pixel electrode that applies a voltage to this LCD (be this center symmetry transparent electrode pattern 13) herein, the liquid crystal molecule of contiguous this slit 131 can be arranged along with the direction of this slit 131, and all liquid crystal molecules can be toppled over towards the direction of central broken hole or projection 211, and produce the effect that continuity (continuous) quadruple is divided the territory, reach the purpose at augmentation visual angle.
Fig. 2 shows that the penetrating region of semi-penetration, semi-reflective TFT-LCD unit picture element has the vertical view of two center symmetry transparent electrode pattern structures, wherein scanning linear 100 and signal wire 200 intersect vertically, in this unit picture element, have a switch module TFT 16 and a storage capacitors 17, in the B of echo area, have whole piece and be produced on metallic reflection plate 18 on a plurality of prominent points 11, in penetrating region A, have this two center symmetry transparent electrode patterns 13, so can produce the effect in eightfold branch territory, reach the purpose at augmentation visual angle.
Yet, because the structure of semi-penetration, semi-reflective TFT-LCD itself and crosstalk phenomenon (crosstalk) and increase aperture opening ratio for avoiding electrode in signal wire and the picture element, at the intersection of echo area A and penetrating region B and on the border of penetrating region A and scanning linear (gate line) 100 and signal wire (data line) 200, the very big slope f1 of one angle is all arranged, f2, f3, as shown in Figure 2, when in the penetrating region of semi-penetration, semi-reflective TFT-LCD unit picture element, forming more than one center symmetry transparent electrode pattern 13 structures, this slope f1, the acting force that f3 swings to liquid crystal molecule on every side can very strong (as forming very strong thrust (bump) effect), surpass 211 pairs of the broken hole of upper substrate transparency electrode or dielectric medium projections away from this slope f1, the acting force that liquid crystal molecule is swung to around the side of f3, thereby influence is away from this slope f1, the arrangement of liquid crystal molecule around the side of f3, make the liquid crystal of penetrating region zone line F point to unstable (as shown in Figure 3), so that can produce different regional extents with hanging down when pressure reduction is changed in the High Pressure Difference conversion, and influence the reaction time.
Summary of the invention
The object of the present invention is to provide a kind ofly to form the semi-penetration, semi-reflective Thin Film Transistor-LCD (transflective TFT-LCD) of uniform multi-zone vertical alignment nematic pattern (MVA), so that promote reaction velocity at penetrating region.
In first embodiment of the present invention, disclose a kind of unit image element structure of semi-penetration, semi-reflective Thin Film Transistor-LCD, this unit image element structure is surrounded by first and second scanning linears and first and second signal wires, and divide into an echo area and a penetrating region, first scanning linear is contiguous to be this echo area, second scanning linear is contiguous to be this penetrating region, at the intersection of this echo area and this penetrating region and at the boundary of this penetrating region and this second scanning linear first and second slopes is arranged respectively.This unit image element structure comprises a transparent lower substrate that contains thin film transistor (TFT), be positioned at this transparent insulating layer above transparent lower substrate of this echo area, wherein the upper surface of this transparent insulating layer has a plurality of prominent points (bumps), be made in a reflecting plate of the upper surface of this transparent insulating layer, be positioned at the first symmetry transparent electrode pattern of the intersection of this transparent lower substrate top of this penetrating region and contiguous this echo area and this penetrating region, it is the liquid crystal distribution that is used for producing the multi-zone vertical alignment nematic pattern, be positioned at the second symmetry transparent electrode pattern of the boundary of this transparent lower substrate top of this penetrating region and contiguous this penetrating region and this second scanning linear, it is to electrically connect with this first symmetry transparent electrode pattern, and the liquid crystal distribution that is used for producing the multi-zone vertical alignment nematic pattern, top and the boundary that is arranged on this transparent lower substrate in this first and this second symmetry transparent electrode pattern between and the thrust structure (bump structure) of traversing this penetrating region, its be used for balance this first and this second slope acting force that liquid crystal molecule is on every side swung to, transparent upper with color filter layers, be positioned at the transparent upper electrode of the color filter layers lower surface of this transparent upper, wherein under preferable situation, this transparent upper electrode has a corresponding broken hole or dielectric medium projection and the liquid crystal layer between this transparent upper electrode and this first and this second symmetry transparent electrode pattern in the position that corresponds to this at least one transparent electrode pattern.
Moreover, the unit image element structure of a kind of semi-penetration, semi-reflective Thin Film Transistor-LCD that in the second embodiment of the present invention, is disclosed, be to comprise a transparent lower substrate that contains thin film transistor (TFT), be positioned at this transparent insulating layer above transparent lower substrate of this echo area, wherein the upper surface of this transparent insulating layer has a plurality of prominent points (bumps), be made in a reflecting plate of the upper surface of this transparent insulating layer, be positioned at the first asymmetry transparent electrode pattern of the intersection of this transparent lower substrate top of this penetrating region and contiguous this echo area and this penetrating region, it is to be used for the acting force that this first slope of balance swings to liquid crystal molecule on every side, distribute with the liquid crystal that produces uniform multi-zone vertical alignment nematic pattern, be positioned at this penetrating region this transparent lower substrate above, and the second asymmetry transparent electrode pattern of the boundary of contiguous this penetrating region and this second scanning linear, it is to electrically connect with this first asymmetry transparent electrode pattern, and be used for the acting force that this second slope of balance swings to liquid crystal molecule on every side, distribute with the liquid crystal that produces uniform multi-zone vertical alignment nematic pattern, one has the transparent upper of color filter layers, be positioned at the transparent upper electrode of the color filter layers lower surface of this transparent upper, wherein under preferable situation, this transparent upper electrode is corresponding to this first asymmetry transparent electrode pattern respectively away from the part of this echo area with correspond to the position of this second asymmetry transparent electrode pattern away from the part of this second scanning linear, respectively have a corresponding broken hole or dielectric medium projection and be positioned at this transparent upper electrode and this first and this second symmetry transparent electrode pattern between liquid crystal layer.
In the third embodiment of the present invention, a kind of unit image element structure of semi-penetration, semi-reflective Thin Film Transistor-LCD comprises a transparent lower substrate that contains thin film transistor (TFT), be positioned at this transparent insulating layer above transparent lower substrate of this echo area, wherein the upper surface of this transparent insulating layer has a plurality of prominent points (bumps), be made in the reflecting plate of the upper surface of this transparent insulating layer, be positioned at the first symmetry transparent electrode pattern of the intersection of this transparent lower substrate top of this penetrating region and contiguous this echo area and this penetrating region, it is the liquid crystal distribution that is used for producing the multi-zone vertical alignment nematic pattern, be positioned at the second symmetry transparent electrode pattern of the boundary of this transparent lower substrate top of this penetrating region and contiguous this penetrating region and this second scanning linear, it is to electrically connect with this first symmetry transparent electrode pattern, and the liquid crystal distribution that is used for producing the multi-zone vertical alignment nematic pattern, the spacing between this first and the 3rd symmetry transparent electrode pattern wherein, distance greater than this first symmetry transparent electrode pattern and this echo area and this penetrating region intersection, so that the acting force that swing to liquid crystal molecule on every side on this first slope of balance, and the spacing between this second and the 3rd symmetry transparent electrode pattern, distance greater than this second symmetry transparent electrode pattern and this penetrating region and this second scanning linear boundary, so that the acting force that swing to liquid crystal molecule on every side on this second slope of balance, transparent upper with color filter layers, be positioned at the transparent upper electrode of the color filter layers lower surface of this transparent upper, wherein under preferable situation, this transparent upper electrode has a corresponding broken hole or dielectric medium projection and the liquid crystal layer between this transparent upper electrode and this first and this second symmetry transparent electrode pattern in the position that corresponds to this at least one transparent electrode pattern.
Description of drawings
Figure 1A one has the embodiment schematic top plan view of the center symmetry transparent electrode pattern of slit (fine slit);
Figure 1B is the vertical view in the upper substrate transparency electrode of the symmetry transparent electrode pattern position, center that corresponds to Figure 1A;
Fig. 1 C is the vertical view after the center symmetry transparent electrode pattern combination of the upper substrate transparency electrode of Figure 1B and Figure 1A;
Fig. 2 has the vertical view of two center symmetry transparent electrode pattern structures for the penetrating region of semi-penetration, semi-reflective TFT-LCD unit picture element;
Fig. 3 is influence is pointed on the slope of the penetrating region of semi-penetration, semi-reflective TFT-LCD of Fig. 2 and echo area intersection to liquid crystal a analogous diagram;
Fig. 4 is for showing the vertical view of semi-penetration, semi-reflective TFT-LCD unit's picture element of the present invention making one thrust structure (bump structure) between two center symmetry transparent electrode patterns of penetrating region;
Fig. 5 A is semi-penetration, semi-reflective of the present invention TFT-LCD unit picture element has two non-centrosymmetry transparent electrode pattern structures at penetrating region a vertical view;
Fig. 5 B has three non-centrosymmetry transparent electrode pattern structures for demonstration semi-penetration, semi-reflective of the present invention TFT-LCD unit picture element at penetrating region vertical view;
Fig. 6 has the analogous diagram that the liquid crystal of non-centrosymmetry transparent electrode pattern points to for semi-penetration, semi-reflective of the present invention TFT-LCD unit picture element at penetrating region; And
Fig. 7 is that the spacing of semi-penetration, semi-reflective TFT-LCD unit's picture element of the present invention between two centers symmetry transparent electrode patterns of penetrating region is close to the vertical view of the slit on border to frontier distance greater than it.
The explanation of assembly figure number
| Center symmetry | |
| Upper | Electrode broken hole or dielectric medium projection (protrusion) 211 |
| Slope f1, f2, f3 | Penetrating region zone line F, F ' |
| Thrust structure (bump structure) 20 | Penetrating region A |
| Echo area B | |
| Non-centrosymmetry | Scanning linear 100 |
| Signal wire 200 | ????TFT?16 |
| | Apart from x, y, x1, y1, x2, y2, a, b, |
| Reflecting plate | |
| 18 |
Embodiment
For improving above-mentioned problem, the present invention is by plural transparent electrode pattern being done following several different configurations, provide to form the semi-penetration, semi-reflective TFT-LCD of uniform multi-zone vertical alignment nematic pattern (MVA) at penetrating region, and can promote its reaction velocity.Shown in being described in detail as follows of relevant various embodiments of the invention.
First embodiment
Can be in the penetrating region of semi-penetration, semi-reflective TFT-LCD unit picture element, to being subjected to slope, border f1, between two centers symmetry transparent electrode patterns of f3 (being respectively) acting force influence at the intersection of echo area A and penetrating region B and at the boundary of penetrating region A and scanning linear 100, make a slope thrust structure (bump structure) that is arranged on the infrabasal plate pixel electrode and traverses panel, come equilibrium boundary slope f1, f3 (promptly being respectively at the intersection of echo area A and penetrating region B and at the boundary of penetrating region A and scanning linear 100) is for away from this slope f1, the effect strength that liquid crystal molecule is swung to around the side of f3.Fig. 4 shows that semi-penetration, semi-reflective of the present invention TFT-LCD unit picture element when penetrating region has two centers symmetry transparent electrode pattern 13 structures, makes the vertical view of a thrust structure (bump structure) 20 between these two centers symmetry transparent electrode patterns 13.When having plural center symmetry transparent electrode pattern 13 structures at penetrating region (wherein, adjacent symmetry transparent electrode pattern is mutual electric connection) time, one thrust structure (bump structure) is then respectively arranged between adjacent symmetry transparent electrode pattern, this thrust structure be arranged on this transparent lower substrate above, and traverse this penetrating region.
Second embodiment
Can be at the penetrating region of semi-penetration, semi-reflective TFT-LCD unit picture element, at contiguous this slope f1, the f3 place, make non-centrosymmetrical transparent electrode pattern, make this slope f1, f3 influence the effect balance of power of the slit of effect strength that liquid crystal molecule swings to and this non-centrosymmetry transparent electrode pattern.Fig. 5 A shows semi-penetration, semi-reflective of the present invention TFT-LCD unit picture element when penetrating region has two transparent electrode pattern structures, and these two transparent electrode patterns are made into the vertical view of a non-centrosymmetry transparent electrode pattern 23, wherein x1＞y1.Fig. 5 B shows that semi-penetration, semi-reflective of the present invention TFT-LCD unit picture element is when penetrating region has three transparent electrode pattern structures, contiguous this slope f1, these two vertical views that transparent electrode pattern is a non-centrosymmetry transparent electrode pattern 33 at f3 place (not being shown in Fig. 5 B), x2＞y2 wherein, and the 3rd transparent electrode pattern offset because of both sides acting force balance, so still be center symmetry transparent electrode pattern 13.
Fig. 6 has the simulation result (wherein x/y is about 1.5) that the liquid crystal of non-centrosymmetry transparent electrode pattern points to for semi-penetration, semi-reflective of the present invention TFT-LCD unit picture element at penetrating region, compare and to find with Fig. 3, liquid crystal in the F ' zone points to and presents stable proper alignment, the design that proves this kind non-centrosymmetry transparent electrode pattern helps the strength on equilibrium boundary slope, and it is stable that liquid crystal molecule is pointed to.
The 3rd embodiment
Can be at the penetrating region of semi-penetration, semi-reflective TFT-LCD unit picture element, make and be subjected to slope, border f1, spacing between two center symmetry transparent electrode patterns of f3 acting force influence, greater than contiguous slope f1, the slit of the center at f3 place symmetry transparent electrode pattern is to the distance on border, owing to heal when big when the spacing between two transparent electrode patterns, it is big that the degree of crook of the equipotential line in this spacing can become, as formation one thrust (bump) structure, and strengthen swinging to of liquid crystal.Fig. 7 shows that semi-penetration, semi-reflective of the present invention TFT-LCD unit picture element is when penetrating region has two centers symmetry transparent electrode pattern structures, make these two transparent electrode patterns 13 respectively near this slope f1, the slit at f3 place (not being shown in Fig. 7) is the distance b and the c of (at the intersection of echo area A and penetrating region B and at the boundary of penetrating region A and scanning linear 100) to the border, less than the spacing a between these two transparent electrode patterns 13.
Number, the size of the slit of the employed in the present invention transparent electrode pattern with radial slots, position, angle and shape are set and the number of the transparent electrode pattern that in the unit picture element, comprised, all visual actual needs is done suitable variation, and the present invention does different configurations above-mentioned to this transparent electrode pattern, also can cooperate with it and do suitable change.
The above utilizes preferred embodiment to describe the present invention in detail, but not limits the scope of the invention, and described those skilled in the art can both understand, suitable do some small change and adjustment, will belong to the present invention, and not break away from the spirit and scope of the present invention.
Claims (10)
1, a kind of unit image element structure of semi-penetration, semi-reflective Thin Film Transistor-LCD, it is that first and second scanning linears and first and second signal wires surround, and divide into an echo area and a penetrating region, contiguous this echo area of this first scanning linear, contiguous this penetrating region of this second scanning linear, at the intersection of this echo area and this penetrating region and at the boundary of this penetrating region and this second scanning linear first and second slopes are arranged respectively, this unit image element structure comprises:
One contains the transparent lower substrate of thin film transistor (TFT);
One transparent insulating layer, its be positioned at this echo area this above transparent lower substrate, and the upper surface of this transparent insulating layer has a plurality of prominent points (bumps);
One reflecting plate is the upper surface that is made in this transparent insulating layer;
The first symmetry transparent electrode pattern, its be positioned at this penetrating region this transparent lower substrate above, and the intersection of contiguous this echo area and this penetrating region when applying a voltage to this LCD, is used for the liquid crystal of the multi-zone vertical alignment nematic pattern that produces to distribute;
The second symmetry transparent electrode pattern, its be positioned at this penetrating region this transparent lower substrate above, and the boundary of contiguous this penetrating region and this second scanning linear, and electrically connect with this first symmetry transparent electrode pattern, when applying a voltage to this LCD, be used for the liquid crystal of the multi-zone vertical alignment nematic pattern that produces to distribute;
One thrust structure (bump structure), its be set at this transparent lower substrate above, the boundary in this first and this second symmetry transparent electrode pattern between and traverse this penetrating region, be used for balance this first and this second slope acting force that liquid crystal molecule is on every side swung to;
One has the transparent upper of color filter layers;
One transparent upper electrode is positioned at the color filter layers lower surface of this transparent upper; And
One liquid crystal layer is between this transparent upper electrode and this first and this second symmetry transparent electrode pattern and this transparent upper electrode and this reflecting plate.
2, the unit image element structure of semi-penetration, semi-reflective Thin Film Transistor-LCD as claimed in claim 1, wherein the first and second symmetry transparent electrode patterns are one to have the ITO electrode of radial slots (fineslit).
3, the unit image element structure of semi-penetration, semi-reflective Thin Film Transistor-LCD as claimed in claim 1, wherein this transparent upper electrode respectively has a corresponding broken hole in the position that corresponds to the first and second symmetry transparent electrode patterns respectively.
4, the unit image element structure of semi-penetration, semi-reflective Thin Film Transistor-LCD as claimed in claim 1, wherein this transparent upper electrode respectively has a corresponding dielectric medium projection in the position that corresponds to the first and second symmetry transparent electrode patterns respectively.
5, a kind of unit image element structure of semi-penetration, semi-reflective Thin Film Transistor-LCD, surrounded by first and second scanning linears and first and second signal wires, and divide into an echo area and a penetrating region, contiguous this echo area of this first scanning linear, contiguous this penetrating region of this second scanning linear, at the intersection of this echo area and this penetrating region and at the boundary of this penetrating region and this second scanning linear first and second slopes are arranged respectively, this unit image element structure comprises:
One contains the transparent lower substrate of thin film transistor (TFT);
One transparent insulating layer, its be positioned at this echo area this above transparent lower substrate, and the upper surface of this transparent insulating layer has a plurality of prominent points (bumps);
One reflecting plate, it is made in the upper surface of this transparent insulating layer;
The first asymmetry transparent electrode pattern, its be positioned at this penetrating region this transparent lower substrate above, and the intersection of contiguous this echo area and this penetrating region, when applying a voltage to this LCD, be used for the acting force that this first slope of balance swings to liquid crystal molecule on every side, distribute with the liquid crystal that produces a uniform multi-zone vertical alignment nematic pattern;
The second asymmetry transparent electrode pattern, its be positioned at this penetrating region this transparent lower substrate above, and the boundary of contiguous this penetrating region and this second scanning linear, and electrically connect with this first asymmetry transparent electrode pattern, when applying a voltage to this LCD, be used for the acting force that this second slope of balance swings to liquid crystal molecule on every side, distribute with the liquid crystal that produces a uniform multi-zone vertical alignment nematic pattern;
One has the transparent upper of color filter layers;
One transparent upper electrode is positioned at the color filter layers lower surface of this transparent upper; And
One liquid crystal layer is between this transparent upper electrode and this first and this second asymmetry transparent electrode pattern and this transparent upper electrode and this reflecting plate.
6, the unit image element structure of semi-penetration, semi-reflective Thin Film Transistor-LCD as claimed in claim 5, wherein this first and this second asymmetry transparent electrode pattern be one to have the ITO electrode of asymmetry radial slots (fine slit).
7, the unit image element structure of semi-penetration, semi-reflective Thin Film Transistor-LCD as claimed in claim 5, wherein this transparent upper electrode respectively has a corresponding electrode broken hole corresponding to this first asymmetry transparent electrode pattern respectively away from the part of this echo area with correspond to the position of this second asymmetry transparent electrode pattern away from the part of this second scanning linear.
8, the unit image element structure of semi-penetration, semi-reflective Thin Film Transistor-LCD as claimed in claim 5, wherein this transparent upper electrode respectively has a corresponding dielectric medium projection corresponding to this first asymmetry transparent electrode pattern respectively away from the part of this echo area with correspond to the position of this second asymmetry transparent electrode pattern away from the part of this second scanning linear.
9, the unit image element structure of semi-penetration, semi-reflective Thin Film Transistor-LCD as claimed in claim 5, other comprises at least one symmetry transparent electrode pattern, its be positioned at this penetrating region this transparent lower substrate above, the boundary in this first and this second asymmetry transparent electrode pattern between, and respectively with this first and this second asymmetry transparent electrode pattern electrically connect, when applying a voltage to this LCD, be used for producing the liquid crystal distribution of multi-zone vertical alignment nematic pattern.
10, a kind of unit image element structure of semi-penetration, semi-reflective Thin Film Transistor-LCD, it is surrounded by first and second scanning linears and first and second signal wires, and divide into an echo area and a penetrating region, contiguous this echo area of this first scanning linear, contiguous this penetrating region of this second scanning linear, at the intersection of this echo area and this penetrating region and at the boundary of this penetrating region and this second scanning linear first and second slopes are arranged respectively, this unit image element structure comprises:
One contains the transparent lower substrate of thin film transistor (TFT);
One transparent insulating layer, its be positioned at this echo area this above transparent lower substrate, and the upper surface of this transparent insulating layer has a plurality of prominent points (bumps);
One reflecting plate, it is made in the upper surface of this transparent insulating layer;
The first symmetry transparent electrode pattern, its be positioned at this penetrating region this transparent lower substrate above, and the intersection of contiguous this echo area and this penetrating region when applying a voltage to this LCD, is used for the liquid crystal of the multi-zone vertical alignment nematic pattern that produces to distribute;
The second symmetry transparent electrode pattern, its be positioned at this penetrating region this transparent lower substrate above, and the boundary of contiguous this penetrating region and this second scanning linear, and electrically connect with this first symmetry transparent electrode pattern, when applying a voltage to this LCD, be used for the liquid crystal of the multi-zone vertical alignment nematic pattern that produces to distribute;
One has the transparent upper of color filter layers;
One transparent upper electrode is positioned at the color filter layers lower surface of this transparent upper; And
One liquid crystal layer is between this transparent upper electrode and this first and this second symmetry transparent electrode pattern and this transparent upper electrode and this reflecting plate;
Wherein, this first and this second symmetry transparent electrode pattern between spacing, distance greater than this first symmetry transparent electrode pattern and this echo area and this penetrating region intersection, so that the acting force that swing to liquid crystal molecule on every side on this first slope of balance, and greater than the distance of this second symmetry transparent electrode pattern and this penetrating region and this second scanning linear boundary, so that the acting force that swing to liquid crystal molecule on every side on this second slope of balance.
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| CN100405199C (en) * | 2006-09-25 | 2008-07-23 | 友达光电股份有限公司 | Semi-interpenetrating, penetrating and reflective liquid crystal display panel |
| CN100435011C (en) * | 2006-11-01 | 2008-11-19 | 友达光电股份有限公司 | Multiple domain vertical alignment pixel and its producing method |
| US7978298B2 (en) | 2006-03-23 | 2011-07-12 | Sharp Kabushiki Kaisha | Liquid crystal display device |
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| JP2001083518A (en) * | 1999-09-14 | 2001-03-30 | Toshiba Corp | Multidomain type liquid crystal display device |
| JP3675404B2 (en) * | 2001-09-25 | 2005-07-27 | セイコーエプソン株式会社 | Transflective liquid crystal device and electronic equipment using the same |
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- 2003-11-25 CN CNB2003101154278A patent/CN100349048C/en not_active Expired - Fee Related
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| CN100435011C (en) * | 2006-11-01 | 2008-11-19 | 友达光电股份有限公司 | Multiple domain vertical alignment pixel and its producing method |
| US8068201B2 (en) | 2006-12-18 | 2011-11-29 | Sharp Kabushiki Kaisha | Liquid crystal display having particular auxiliary electrode |
| US8300188B2 (en) | 2007-01-11 | 2012-10-30 | Sharp Kabushiki Kaisha | Liquid crystal display panel with micro-lens array and liquid crystal display device |
| US8310640B2 (en) | 2007-01-26 | 2012-11-13 | Sharp Kabushiki Kaisha | Liquid crystal display device having pixel electrode with plurality of unit electrode portions including slits |
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