CN1505052A - 半导体存储装置和存储单元的写入以及擦除方法 - Google Patents
半导体存储装置和存储单元的写入以及擦除方法 Download PDFInfo
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- CN1505052A CN1505052A CNA200310119596A CN200310119596A CN1505052A CN 1505052 A CN1505052 A CN 1505052A CN A200310119596 A CNA200310119596 A CN A200310119596A CN 200310119596 A CN200310119596 A CN 200310119596A CN 1505052 A CN1505052 A CN 1505052A
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Abstract
Description
Claims (38)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002353053 | 2002-12-04 | ||
JP2002353053 | 2002-12-04 | ||
JP2003018645A JP4249992B2 (ja) | 2002-12-04 | 2003-01-28 | 半導体記憶装置及びメモリセルの書き込み並びに消去方法 |
JP2003018645 | 2003-01-28 |
Publications (2)
Publication Number | Publication Date |
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CN1505052A true CN1505052A (zh) | 2004-06-16 |
CN100367411C CN100367411C (zh) | 2008-02-06 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB2003101195969A Expired - Fee Related CN100367411C (zh) | 2002-12-04 | 2003-12-04 | 半导体存储装置和存储单元的写入以及擦除方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7006371B2 (zh) |
EP (1) | EP1426969A3 (zh) |
JP (1) | JP4249992B2 (zh) |
KR (1) | KR100593325B1 (zh) |
CN (1) | CN100367411C (zh) |
TW (1) | TWI245290B (zh) |
Cited By (16)
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CN101894587A (zh) * | 2010-07-23 | 2010-11-24 | 上海宏力半导体制造有限公司 | 相变存储器的自限写入脉冲发生电路 |
CN102077293A (zh) * | 2008-06-27 | 2011-05-25 | 桑迪士克3D公司 | 非易失性存储器中的同时写入和核对 |
CN101371313B (zh) * | 2006-01-13 | 2011-08-17 | 夏普株式会社 | 非易失性半导体存储装置 |
CN102169720A (zh) * | 2010-02-25 | 2011-08-31 | 复旦大学 | 一种消除过写、误写现象的电阻随机存储器 |
CN102169722A (zh) * | 2010-02-25 | 2011-08-31 | 复旦大学 | 降低初始化或置位操作功耗的电阻随机存储器及其操作方法 |
CN101030448B (zh) * | 2006-03-01 | 2011-09-07 | 松下电器产业株式会社 | 半导体存储器件及半导体集成电路系统 |
CN102270505A (zh) * | 2011-06-24 | 2011-12-07 | 北京时代全芯科技有限公司 | 相变存储单元及相变存储器 |
US8456887B2 (en) | 2007-12-26 | 2013-06-04 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
CN103229419A (zh) * | 2010-11-19 | 2013-07-31 | 惠普发展公司,有限责任合伙企业 | 用于切换忆阻器件的方法和电路 |
CN103262414A (zh) * | 2010-11-19 | 2013-08-21 | 惠普发展公司,有限责任合伙企业 | 用于切换阵列中的忆阻器件的方法和电路 |
CN103578548A (zh) * | 2012-08-09 | 2014-02-12 | 北京兆易创新科技股份有限公司 | 快闪存储器及其参考单元的确定方法 |
CN106448731A (zh) * | 2015-08-06 | 2017-02-22 | 意法半导体(鲁塞)公司 | 用于管理eeprom存储器单元中的数据的写入周期的方法和系统 |
CN106776362A (zh) * | 2015-11-24 | 2017-05-31 | 中芯国际集成电路制造(上海)有限公司 | 存储器的控制方法及装置 |
US10528287B2 (en) | 2015-10-09 | 2020-01-07 | Sony Corporation | Memory, memory controller, storage apparatus, information processing system, and control method for tracking erase count and rewrite cycles of memory pages |
CN113345503A (zh) * | 2020-03-02 | 2021-09-03 | 华邦电子股份有限公司 | 半导体存储装置以及读出方法 |
CN113744780A (zh) * | 2021-09-07 | 2021-12-03 | 上海集成电路装备材料产业创新中心有限公司 | 一种多值存储器的校准电路、校准方法和编程方法 |
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JP3894030B2 (ja) * | 2002-04-17 | 2007-03-14 | ソニー株式会社 | 抵抗変化記憶素子を用いた記憶装置及び同装置の参照抵抗値決定方法 |
US7085154B2 (en) * | 2003-06-03 | 2006-08-01 | Samsung Electronics Co., Ltd. | Device and method for pulse width control in a phase change memory device |
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JP4249992B2 (ja) | 2009-04-08 |
EP1426969A3 (en) | 2005-11-16 |
EP1426969A2 (en) | 2004-06-09 |
JP2004234707A (ja) | 2004-08-19 |
US20040114444A1 (en) | 2004-06-17 |
KR100593325B1 (ko) | 2006-06-26 |
CN100367411C (zh) | 2008-02-06 |
TW200418034A (en) | 2004-09-16 |
US7006371B2 (en) | 2006-02-28 |
KR20040048864A (ko) | 2004-06-10 |
TWI245290B (en) | 2005-12-11 |
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