CN1495917A - 发光装置的制造方法 - Google Patents

发光装置的制造方法 Download PDF

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Publication number
CN1495917A
CN1495917A CNA031549349A CN03154934A CN1495917A CN 1495917 A CN1495917 A CN 1495917A CN A031549349 A CNA031549349 A CN A031549349A CN 03154934 A CN03154934 A CN 03154934A CN 1495917 A CN1495917 A CN 1495917A
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China
Prior art keywords
light
fluorophor
emitting diode
emitting
emitting component
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Granted
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CNA031549349A
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CN1249822C (zh
Inventor
清水义则
阪野顕正
野口泰延
森口敏生
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Nichia Corp
Nichia Chemical Industries Ltd
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Nichia Corp
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    • H—ELECTRICITY
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    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
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    • C09K11/7767—Chalcogenides
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Abstract

本发明提供了一种发出白色光的装置的制造方法，准备一般式以(Y1－rGdr)3Al5O12:Ce表示的荧光体，其中，0≤r≤1，Al的一部分由Ga和/或In置换；用一种半透明的树脂与所述荧光体混合成浆状混合物；所述的浆状混合物涂撒在一个安装座上，蓝色发光二极管芯片设置在所述的安装座上；使含有所述的荧光体的浆状混合物，直接地或间接地覆盖所述的蓝色发光二极管芯片而形成涂覆构件；所述的涂覆构件吸收由所述的蓝色发光二极管芯片发出的光的一部分，发出不同于被吸收的蓝色光的波长的光由所述的涂覆构件所发出的光与所述蓝色发光二极管芯片所发出的未被所述涂覆构件所吸收的光组合成白色光。

Description

发光装置的制造方法
本发明是中国专利申请97196762.8的分案申请。
技术领域
本发明涉及一种用于LED显示器、后照光光源、信号机、照光式开关与各种指示器的发光二极管，特别涉及发光装置及使用所述发光装置的显示装置，所述发光装置包括光致发光荧光体，其中发光元件变换所产生的光的波长，并使其发光。
背景技术
发光二极管因小型，可发出效率良好的色彩鲜艳的光，以及系半导体元件，故具有无灯泡烧坏之虞，初始驱动特性和耐震性优越，以及进一步反复开/关点亮方面极强的特点。因此，可广泛用来作为各种指示器与种种光源。最近有人开始分别开发超高亮度、高效率RGB(红、绿、蓝)发光二极管，并使用设有此种发光二极管的大画面LED显示器。这种LED显示器具有以极少电力即可动作，质量轻以及使用寿命长的优点，可预期今后将广泛使用。
此外，最近有人使用发光二极体来进行种种构成白色发光光源的尝试。为了使用发光二极管得到白色光，由于发光二极体具有单色性峰值波长，故例如有将R、G、B三发光元件邻近配置，使其发光而扩散混色的必要。想要藉此构成产生白色光情形下，会有由于发光元件的色调与亮度等的分散而无法产生所需白色的问题。此外，在发光元件分别以不同材料形成情形下，各发光元件的驱动电力等有针对各个不同元件施加预定电压的必要。而且，由于发光元件为半导体发光元件，故会有各个元件的温度特性随时间变化不同，色调随环境而变化，以及无法将由各发光元件所产生的光均匀混合而产生色斑的诸多问题。即，虽然发光二极管作为各个色发光的发光装置有效，但无法成为使用发光元件产生白色光的满意光源。
因此，本申请人于特开平5-152609号公报、特开平7-99345号公报、特开平7-176794号公报、特开平8-8614号公报等文献中公开了一种发光二极管，将原先发光元件产生的光以荧光体作色变换进行输出。所揭示的发光二极管系用一种发光元件可发出白色等其他发光色，其结构如下。
上述公报所揭示的发光二极管，具体而言，系将发光层的能带间隙大的发光元件配置在设于引线框前端的帽部(cap)上，含有荧光体，在覆盖发光元件的树脂模构件中吸收来自发光元件的光。发出与所吸收光波长不同的光(波长变换)。
在上述所揭示的发光二极管中，使用可发出蓝色柔光的发光元件来作为发光元件，由于藉含有荧光体的树脂来模制，且此荧光体吸收所述发光元件所发的光而发出黄色光系，故可制得一种能由混色发出白色光系的发光二极管。
但是，已往的发光二极管有随着荧光体劣化而色调偏差，或荧光体发黑光的外部取出效率低下的情形等问题。此处所谓发黑是指，例如，使用(Cd，Zn)S荧光体等的无机系列荧光体情形下，构成此荧光体的金属元素一部分，一面析出一面变质而着色，再者，在使用有机系列荧光体材料情形下，由于2重结合切断等而着色。特别是指使用具有高能带间隙的半导体为发光元件以提高荧光体变换效率的情形(也即，基于半导体来提高所发光的能量，增加荧光体所可吸收阈值以上的光，而吸收较多的光)下，或荧光体使用量减少的情形(即，相对地，荧光体所照射的能量增多)下，由于荧光体所吸收的光的能量必然会升高，故荧光体显然会劣化。而且，发光元件的发光强度使用更长时间的话，荧光体会进一步加速劣化。
设置在发光元件近傍发荧光体，因发光元件的温度上升与外部环境(例如由于在屋外使用场合的太阳光等)也暴露于高温下，由于这种热而发生劣化的情形。
此外，根据所述荧光体还有由于从外部渗入的水份和制造时内部所含水分和上述的光以及热而促进劣化的情形。
另外，在使用离子性的有机染料的情况下，在芯片附近的直流电场引起的电气移动而使色调变化。
发明内容
因此，本发明目的在于提供一种发光装置以解决上述课题，使在较高亮度、长时间使用环境下，发光光度与发光光率的降低和色偏差极小。
本发明的第1方面提供了一种发出白色光的装置的制造方法，准备一般式以(Y1-rGdr)3Al5O12:Ce表示的荧光体，其中，0≤r≤1，Al的一部分由Ga和/或In置换；用一种半透明的树脂与所述荧光体混合成浆状混合物；所述的浆状混合物涂撒在一个安装座上，蓝色发光二极管芯片设置在所述的安装座上；使含有所述的荧光体的浆状混合物，直接地或间接地覆盖所述的蓝色发光二极管芯片而形成涂覆构件；所述的涂覆构件吸收由所述的蓝色发光二极管芯片发出的光的一部分，发出不同于被吸收的蓝色光的波长的光由所述的涂覆构件所发出的光与所述蓝色发光二极管芯片所发出的未被所述涂覆构件所吸收的光组合成白色光。
本发明还提供了如本发明的第1方面所述的发出白色光的装置的制造方法，其特征在于，所述的荧光体是，一球状物在有水的条件下进行研磨、洗涤、分离、干燥和筛分的方法制造的荧光体。
本发明还提供了如本发明的第1方面所述的发出白色光的装置的制造方法，其特征在于，把所述的荧光体混合成浆状混合物步骤，是把两种或两种以上的所述的荧光体与一种半透明的树脂混合。
本发明还提供了如本发明的第1方面所述的发出白色光的装置的制造方法，其特征在于，所述浆状混合物涂撒在一个安装座上的步骤是分两步或两步以上的步骤、并使用荧光体与树脂的不同的混合比例的浆状混合物。
本发明还提供了如本发明的第1至4方面中的任何一个方面的一种发出白色光的装置的制造方法，其特征在于，所述的蓝色发光二极管芯片是由蓝宝石(Sapphire)、尖晶石(spinel)、碳化硅(SiC)、硅与氧化锌(ZnO)中所选的一种材料来制造基底的芯片。
本发明还提供了如本发明的第1至5方面中的任何一个方面的一种发出白色光的装置的制造方法，其特征在于，所述安装座上有一帽状构件，所述蓝色发光二极管芯片通过含银的还氧树脂与所述帽状构件附着，所述浆状混合物灌入所述帽状构件。
本发明为达到此目的，在包括发光元件与荧光体的发生装置中，
(1)作为发光元件可作高亮度发光，而且对于长时间使用其发光特性稳定；
(2)作为荧光体，接近上述高亮度发光元件而设置，即使在长时间使用在来自所述发光元件的强光情形下，特性变化极小，而在对耐光性与耐热性方面甚为优异(特别是邻近发光元件而配置的荧光体，根据我们的研究，因具有比太阳光强达30倍-40倍的光，故作为发光元件，若使用高亮度，在使用方面，荧光体所要求的耐候性非常严格)；
(3)作为发光元件与荧光体的关系，荧光体可发出一种光，其发光波长有效吸收且有效异于带有来自发光元件的光谱宽度的单色性峰波长的光。
即，本发明的发光装置是包括发光层为半导体的发光元件和吸收所述发光元件所发出的光的一部分并发出所具有的波长与所吸收的光波长不同的光的光致发光荧光体的发光装置。
上述发光元件的发光层由氮化物系列化合物半导体制成，并且上述光致发光荧光体含有自Y、Lu、Sc、La、Gd与Sm所组成的元素组中所选出的至少一种元素，以及自Al、Ga与In所组成的元素组中所选出的至少一种元素，而且，含有以铈活化的石榴石系列荧光体为其特征。
这里，氮化物系列化合物半导体(一般式为IniGajAlkN，其中0≤i，0≤j，0≤k，i+j+k＝1)始于掺杂有InGaN和各种不纯物的GaN而含有种种物质。
此外，上述光致发光荧光体始于Y3Al5O12:Ce、Gd3In5O12:Ce而含有如上所定义的种种物质。
本发明的发光装置由于使用由可用高亮度发光的氮化物系列化合物半导体制成这种发光元件，故可作高亮度的发光。且在所述发光装置中，所使用的上述光致发光荧光体即使长时间暴露于强光下，荧光特性的变化也极小，而且在耐光性上极为优异。因此，能提供一种发光装置，可针对长时间使用，减少其特性劣化，可减少不仅因来自发光元件的强光，也因野外环境等外来光(含有紫外线的太阳光等)所造成的劣化，使色斑与光亮度降低的情形变得极少。此外，本发明的发光装置，由于所使用的上述光致发光荧光体为短残光，故也可用在需要120n秒这样的较快反应速度的用途方面。
在本发明的发光二极管中，上述光致发光荧光体最好是含有具有Y与Al的钇铝石榴石系列荧光体，由此，可提高发光装置的亮度。
在本发明的发光装置中，作为上述光致发光荧光体，可使用一般式以(Re1-rSmr)3(Al1-sGas)5O12:Ce来表示的荧光体(其中，0≤r＜1，0≤s≤1，而Re是从Y、Gd中所选出的至少的一种)，以获得与使用钇铝石榴石系列荧光体的场合同样优异的特性。
此外，本发明的发光装置为了缩小发光特性(发光波长与发光强度等)的温度依赖性，作为上述光致发光荧光体，最好使用一般式以(Y1-p-q-rGdpCeqSmr)3(Al1-sGas)5O12来表示的荧光体，(其中，0≤p≤0.8、0.0003≤q≤0.2、0.0003≤r≤0.08、0≤s≤1)。
此外，在本发明的发光装置中，上述光致发光荧光体也最好具有分别含Y与Al而组成互异的二个以上以铈活化的钇铝石榴石系列荧光体。由此，即可对应于发光元件的特性(发光波长)，调整光致发光荧光体的发光光谱，发出所要的发光色。
此外，在本发明的发光装置中，为了将发光装置的发光波长设定于设定值，上述光致发光荧光体最好含有分别用(Re1-rSmr)3(Al1-sGas)5O12:Ce(其中，0≤r＜1，0≤s≤1，而Re是从Y、Gd中所选出的至少一种)的一般式来表示，以包含相互组成不同的二个以上荧光体为佳。
此外，在本发明的发光装置中，为了调整发光波长，上述光致发光荧光体也最好含有一般式以Y3(Al1-sGas)5O12:Ce来表示的第1荧光体，以及一般式以Re3Al5O12:Ce来表示的第2荧光体。
其中，0≤s≤1，而Re是从Y、Gd、La中所选出的至少一种。
此外，在本发明的发光装置中，为了调整发光波长，上述光致发光荧光体也最好包含分别在钇铝石榴石系列荧光体中的使钇的一部分与钆置换且相互置换量不同的第1荧光体与第2荧光体。
甚而，在本发明的发光装置中，最好上述发光元件的发光光谱的主峰值设定在400nm至530nm范围内，且上述光致发光荧光体的主发光波长设定成比上述发光元件的主峰值长。由此，即可有效发出白色系列的光。
而且，最好在上述发光元件中，所述发光元件的发光层含有含In的氮化镓系列半导体，而上述光致发光荧光体是一种钇铝石榴石系列荧光体材料，在钇铝石榴石系列荧光体中，Al的一部分以Ga在Ga∶Al＝1∶1至4∶6的比率范围内置换，并且可以在钇铝石榴石系列荧光体中Y的一部分以Gd在Y∶Gd＝4∶1至2∶3的比率范围内置换。如此调整的光致发光荧光体的吸收光谱可使具有作为发光层的含In的氮化镓系半导体的发光元件所发出的光波长非常一致，而增进变换效率(发光效率)。此外，所述发光元件的蓝色光与所述荧光荧光的混色光可成为光效性品质极佳的白色，从而提供在这方面极优异的发光装置。
本发明的一实施例的发光装置，将上述发光元件经由上述光致发光荧光体设置在其一侧面，并且除其一主表面外的表面具备有实质上以反射构件来覆盖的大致呈矩形的导光板，上述发光元件经由上述光致发光荧光体与导光板使所发出的光成为面状，而且从上述导光板的上述的一主表面输出。
本发明其他实施例的发光装置特征在于，上述发光元件设于其一侧面，上述光致发光荧光体设于其一主表面上，包括有用一个以一个反射构件实质上覆盖除所述一主表面外的表面而大体上呈矩形的导光板，上述发光元件经由导光板与上述光致发光荧光体使所发出的光成为面状，而且由上述导光板的上述一主表面发出。
此外，本发明的LED显示装置包括有矩阵状配置本发明发光装置的LED显示器，以及依输入所述LED显示器的显示数据来驱动的驱动电路，由此提供可作为精细显示且视觉上色斑极少的较廉价LED显示装置。
本发明一实施例的发光装置是一种发光二极管，包括
具有帽部与引线部安装引线；
配置在所述安装引线的帽部内，且其一侧的电极电气连接于安装引线的LED芯片；电气连接于所述LED芯片的另一侧电极的内引线；
以覆盖所述LED芯片的方式充填在所述帽部内的透光性涂覆构件；以及
模构件，所述模构件含有所述安装引线的帽部、所述内引线与连接于所述LED芯片的另一侧电极的连接部分，并且覆盖由以所述涂覆构件覆盖的LED芯片；
其特征在于，所述LED芯片是作为氮化物系列化合物半导体，且所述涂覆构件含有光致发光荧光体，所述光致发光荧光体由含有从Y、Lu、Sc、La、Gd与Sm所组成的一组中所选出的至少一种元素与从Al、Ga与In所组成的一组中所选出的至少一种元素，并且由以铈活化的石榴石系列荧光体组成。
在本发明的发光二极体中，上述光致发光荧光体最好具有含Y与Al的钇铝石榴石系列荧光体。
此外，本发明的发光二极管若为上述光致发光荧光体，最好使用一般式以(Re1-rSmr)3(Al1-sGas)5O12:Ce来表示的荧光体(其中0≤r＜1，0≤s≤1，而Re是从Y、Gd中所选出的至少一种)。
此外，本发明的发光二极管若为上述光致发光荧光体，也可使用一般式以(Y1-p-q-rGdpCeqSmr)3(Al1-sGas)5O12来表示的荧光体，(其中，0≤p≤0.8、0.003≤q≤0.2、0.0003≤r≤0.08、0≤s≤1)。
在本发明的发光二极管中，为了将发光波长调整成所要的波长，上述光致发光荧光体最好包括二个以上分别含有Y与Al的相互之间组成相异的以铈活化的钇·铝石榴石系列荧光体。
为了将发光波长调整或所要的波长，本发明的发光二极管同样地，最好使用一般式分别以(Re1-rSmr)3(Al1-sGas)5O12:Ce来表示(其中0≤r＜1，0≤s≤1，而Re是从Y、Gd中所选出的至少一种)而相互之间组成相异的二个以上的荧光体来作为上述光致发光荧光体。
同样地，本发明的发光二极管为了将发光波长调整成所要的波长，最好使用一般式以Y3(Al1-sGas)5O12:Ce表示的第一荧光体和一般式以Re3Al5O12:Ce表示的第二荧光体来作为前述光致发光荧光体。其中，0≤s≤1，而Re是从Y、Ga、La中所选出的至少一种。
同样地，本发明的发光二极管为了将发光波长调整成所要的波长，上述光致发光荧光体也最好在钇铝石榴石系列荧光体中使用第1荧光和第2荧光体材料，分别使第1荧光体材料和第2荧光体材料钇的一部分与钆置换而相互置换量不同。
此外，一般而言，荧光体吸收短波长的光而发出长波长的光，较吸收长波长的光而言发出短波的光者效率为佳。与其使用发出紫外光使树脂(模构件与涂覆构件)劣化不如使用发出可见光较佳。因此，在本发明的发光二极管中，为了提高发光效率与延长其寿命，最好将上述发光元件的发光光谱主峰值设定在可见光中较短波长的400nm至530nm范围内，并且将上述光致发光荧光体的主发波长设定成比上述发光元件的主峰值长。此外，依此方式，由荧光体变换的光，由于也较发光元件所发出的光波长还长，所以荧光体等所反射而变换后的光即使照射在发光元件上，也不会为发光元件所吸收(因变换后的光比能带间隙的能量小)。如此，荧光体等反射的光即为载置有发光元件的帽部所反射，并能进一步作有效的发光。
附图说明
图1表示与本发明实施形态有关的引线型发光二极管模式的剖视图。
图2表示与本发明实施形态有关的芯片型发光二极管型式的剖视图。
图3A表示以第一实施形态的以铈活化的石榴石系列荧光体所激励的光谱图。
图3B表示以第一实施形态的以铈活化的石榴石系列荧光体所发出的光谱图。
图4表示第1实施形态的发光二极管的发光光谱图。
图5A表示表示以第二实施形态的以铈活化的钇铝石榴石系列荧光体的激励光谱图。
图5B表示表示以第二实施形态的以铈活化的钇铝石榴石系列荧光体的发光光谱图。
图6表示用于说明第二实施形态的发光二极管发光色的色度图，在图中，A与B点表示发光元件所发出的光，C、D点分别表示来自二种光致发光荧光体的发光色。
图7表示与本发明的其他实施形态相关的面状发光光源模式的剖视图。
图8表示不同于图7的面状发光光源模式的剖视图。
图9表示不同于图7与图8的面状发光光源模式的剖视图。
图10表示本发明应用例的显示装置的方块图。
图11表示图10所示显示装置的LED显示器的平面图。
图12表示使用本发明的发光二极管与RGB的四个发光二极体来构成象素的LED显示器平面图。
图13A表示在25℃下实施例1与比较例1的发光二极管的寿命试验结果图。
图13B表示60℃，90％RH下实施例1与比较例1的发光二极管的寿命试验结果图。
图14A表示相对于经过时间的亮度保护率，实施例9与比较例2的耐候性试验结果图。
图14B表示相对于经过时间的亮度保护率，实施例9与比较例2的耐候性试验结果图，是表示试验前后的色调变化。
图15A表示实施例9与比较例2的发光二极管的可靠性试验结果，亮度保持率与时间的关系。
图15B表示实施例9与比较例2的发光二极管的可靠性试验结果，色调与时间的关系。
图16表示将表1所示荧光体与峰值波长465nm的蓝色LED组合的发光二极管实现的色再现范围的色度图。
图17表示将表1所示荧光体与峰值波长465nm的蓝色LED组合的发光二极管中荧光体含有量变化时的发光色的变化的色度图。
图18A表示以(Y0.6Gd0.4)3Al5O12:Ce来表示的实施例2的光致发光荧光体的光谱图。
图18B表示具有发光峰值波长460nm的实施例2的发光元件的发光光谱图。
图18C表示实施例2的发光二极管的发光光谱图。
图19A表示以(Y0.2Gd0.8)3Al5O12:Ce来表示的实施例5的光致发光荧光体的发光光谱图。
图19B表示具有发光峰值波长450nm的实施例5的发光元件的发光光谱图。
图19C表示实施例5的发光二极管的发光光谱图。
图20A表示以Y3Al5O12:Ce来表示的实施例6的光致发光荧光体的发光光谱图。
图20B表示具有发光峰值波长450nm的实施例6的发光元件的发光光谱图。
图20C表示实施例6的发光二极管的发光光谱图。
图21A表示以Y3(Al0.5Ga0.5)5O12:Ce来表示的实施例7光致发光荧光体的发光光谱图。
图21B表示具有发光峰值波长450nm的实施例7发光元件的发光光谱图。
图21C表示实施例7的发光二极管的发光光谱图。
图22A表示以(Y0.8Gd0.2)3Al5O12:Ce来表示的实施例11的光致发光荧光体的发光光谱图。
图22B表示以(Y0.4Gd0.6)3Al5O12:Ce来表示的实施例11的光致发光荧光体的发光光谱图。
图22C表示具有发光峰值波长470nm的实施例11的发光元件的发光光谱图。
图23表示实施例11发光二极管的发光光谱图。
标号对照说明
100 发光二极管                      101，201，701 涂覆
102，2302，702 发光元件             103，203 电线
104 模构件                          105 安装引线
105a 帽部                           106 内引线
205 端子金属                        504 框体
505 蔽光构件                      506 矽胶
601 LED显示器                     602 驱动器
603 RAM                           604 色调控制装置
605 驱动电路                      702 发光二极管
703 金属基板                      704 导光板
705，707 反射构件                 706 散射片
具体实施方式
下面，参照附图对本发明的实施形态进行说明。
图1的发光二极管100是具备有安装引线105与内引线106的引线型发光二极管，发光元件102设在安装引线105的帽部105a上，含有规定的光致发光荧光体的涂覆树脂101充填在帽部105a内而覆盖发光元件102后用树脂模制成形而构成。发光元件102的n侧电极与p侧电极分别使用电线103来将安装引线105与内引线106连接。
在如以上所述结构成的发光二极管中，发光元件(LED芯片)102所发光(以下称为LED光)的一部分激励涂覆树脂101内所含光致发光荧光体而产生与LED光的波长不同的光，将光致发光荧光体所产生的荧光与无助于光致发光荧光体激励而发出的LED光混色而输出。其结果是，发光二极管100也发出与发光元件102所发出的LED光的波长不同的光。
图2表示芯片型发光二极管，发光元件(LED芯片)202设在框体204的凹部，含规定的光致发光荧光体的涂覆材料充填于所述凹部以形成涂覆部201而构成该发光二极管。发光元件202用含有诸如Ag的环氧树脂等来固定，而所述发光元件202的n侧电极与p侧电极则分别使用导电电线203连接于设在框体204上的端子金属205。在如上所述构成的芯片型发光二极体中，与图1的引线型发光二极管相同，将光致发光荧光体所产生的荧光与不为光致发光荧光体所吸收的经传送的LED光混色而发出。其结果，发光二极管200也发出与发光元件102所发出LED光的波长不同的光。
具备上述所说明光致发光荧光体的发光二极管具有以下特征。
1.通常，自发光元件(LED)放出的光通过供电给发光元件的电极放出。所放出的光成为发光元件所形成的电极的阴极，具有特定的发光型式，因此不会均匀地在所有方向放出。但是，具备荧光体的发光二极管由于荧光体散射来自发光元件的光而放出光，故不会形成非所要的光型式，而可在广大的范围均匀地放出光。
2.来自发光元件(LED)的光虽然具有单色性的峰值，但由于某种程度的光谱宽度，故光效性高。而这在使用较广范围的波长来作为必要光源情形下尤为不可缺少的优点。例如在使用扫描器的光源的场合，最好使用光谱宽的为佳。
下面说明实施形态1、2的发光二极管。在图1或图2结构的发光二极管中，将一使用可见光频带内光能量较高的氮化物系列化合物半导体的发光元件与一特定的光致发光荧光体组合。因此，具有可作高亮度发光，在长时间使用下无发光效率低下与色斑情形发生良好的特性。
一般而言，在荧光体中，由于吸收短波长的光而放出长波长的光的荧光体比吸收长波长的光而放出短波长的光的荧光体，在变换效率上更优异，故在本发明的发光二极管中，最好使用可发出短波长蓝色系列光的氮化稼系列半导体发光元件(发光元件)。此外，当然以使用高亮度的发光元件为佳。
适合用来与此种氮化镓系列半导体发光元件组合的光致发光荧光体需有以下特性：
1.设置在发光元件102、202邻近，由于暴露在太阳光的约30倍至40倍强的光线下，故在耐光性上极佳，而且可久耐高强度光照射。
2.为了基于发光元件102、202进行激励，发光元件的发光能作有效发光者。特别是，在利用混色情形下，不是紫外线而是监色系列光有效发光。
3.可发出绿色系列至红色系列的光而与蓝色色系列混色成白色。
4.设置在发光元件102、202邻近，而由于会受使所述芯片发光时的发热所造成温度变化的影响，故在温度特性上良好。
5.可基于由色调组合比或多个荧光体的混合化的变化而作连续的变化。
6.发光二极管有对应于使用环境的耐候性。
实施形态1
与本发明有关的实施形态1的发光二极管是具有在发光层的高能带间隙，而将可发出蓝色系列光的氮化稼化合物半导体元件与本身为可发出黄色系列光的光致发光荧光体而以铈活化的石榴石系列光致发光荧光体组合。因此，在实施形态1的发光二极管中，可将发光元件102、202所发出的蓝色系光与被此发光激励的光致发光荧光体的黄色系列光混色，由此而进行白色系列发光。
此外，由于用实施形态1发光二极管的以铈活化的石榴石系列光致发光荧光体具有耐光性与耐候性，故即使长时间将发自发光元件102、202的可见光带中的高能光高亮度照射于其近傍，也可发出发光色的色斑与发光亮度低下极少的白色光。
以下对本实施形态1发光二极管的各构成构件进行说明。
(光致发光荧光体)
本实施形态1的发光二极管所有光致发光荧光体系列是一种以发自半导体发光层的可见光与紫外线来激励而发出具有与经激励的光波长不同的光致发光荧光体。具体而言，以含有自Y、Lu、Sc、La、Gd与Sm中选出的至少一种元素与自Al、Ga与In所选出的至少一种元素而以铈活化的石榴石系列荧光体来作为光致发光荧光体。本发明最好使用含Y与Al而以铈活化的钇铝石榴石系列荧光体，或一般式以(Re1-rSmr)3(Al1-sGas)5O12:Ce(其中，0≤r＜1，0≤s≤1，而Re是从Y、Gd中所选出的至少一种)表示的荧光体。使用氮化稼系列化合物半导体的发光元件所发出的LED光与本身是黄色的光致发光荧光体所发出的荧光成补色关系情形下，借助于将LED光与荧光混合而发出，即可作为整体发出白色系列的光。
在本实施形态1中，如前所述此光致发光荧光体，由于混合涂覆树脂101与形成涂覆部201的树脂(容后详述)来使用，故借助于对应于氮化稼系列发光元件的发光波长，对与树脂等混合的比率，或填入帽部或框体204的凹部的充填量作种种调整，即可任意将发光二极管的色调设定为含白色的电灯色。
所含光致发光荧光体的分布对混色性与耐久性有所影响。例如，自含有光致发光荧光体的涂覆部与模构件的表面侧向发光元件提供光致发光荧光体的分布浓度提高时，较不容易受到来自外部水份等的影响，可防止水份所造成的劣化。另一方面，若使光致发光荧光体自发光元件向模构件等的表面侧的分布浓度提高，可使来自易受外部环境水份影响的发光元件的发热、照射强度等的影响变得较少，从而可抑制光致发光荧光体的劣化。因此，光致发光荧光体的分布可借助于调整含有光致发光荧光体的构件、形成温度、粘度与光致发光荧光体的形状、粒度分布等来实现种种分布，并考虑发光二极管的使用条件来设定分布状态。
实施例1的光致发光荧光体由于与发光元件102、202相接，或作近接配置，即使在照射强度(Ee)为3W·cm-2以上10W·cm-2以下，也具有充份的耐光性，故借助于使用所述荧光体，可构成发光特性优异的发光二极管。
此外，如图3A所示，实施形态1的光致发光荧光体由于具有石榴石结构，故热、光及水份强，使激励光谱的峰值接近450nm。并且发光峰值也如图3B所示，具有接近580nm至700nm的幅度极宽的发光光谱。并且，实施形态1的光致发光荧光体由于在结晶中含有Gd，故可在460nm以上的长波带中提高激励发光效率。借助于增加Gd含量，发光峰值移往长波，而全体发光波长移往长波侧，也即，需要强红发光色情形下，可借助于增加Gd置换量来达成。随着增加Gd，蓝色光所引起的的光致发光的光亮度有低下的倾向。
特别，借助于在具有石榴石结构成YAG系列荧光体的组成内，以Ga来置换Al的一部分，发光波长即往短波侧移动，或借助于以Gd来置换组成中Y的一部分，发光波长往长波侧移动。
表1表示一般式以(Y1-aGda)3(Al1-bGab)5O12:Ce来表示的YAG系列荧光体的组成及其发光特性。
                                   表1
    No  Gd含量A(克分子比)  Ga含量b(克分子比)      CIE色度座标     亮度Y     效率
   X   Y
    ①      0.0      0.0    0.41   0.56     100     100
    ②      0.0      0.4    0.32   0.56     61     63
    ③      0.0      0.5    0.29   0.54     55     67
    ④      0.2      0.0    0.45   0.53     102     108
    ⑤      0.4      0.0    0.47   0.52     102     113
    ⑥      0.6      0.0    0.49   0.51     97     113
    ⑦      0.8      0.0    0.50   0.50     72     86
表1所示的各特性是以460nm的蓝色光来激励而测定的。在表1中，亮度与效率是以①的材料为100来表示其相对值。
在基于Ga来置换Al情况下，最好考虑发光效率与发光波长将比率设定于Ga∶Al＝1∶1至4∶6之间。同样地，在Gd置换Y的一部分的情况下，可以把比率设定于Y∶Gd＝9∶1～1∶9的范围，设定于4∶1～2∶3范围则更好。Gd置换量的比率若不满2成，绿色成份即由于红色成份减少而增大，Gd置换量的比率若在6成以上，红色成分会增加，而亮度则急剧降低。特别，借助于根据发光元件的发光波长，将YAG系列荧光体中Y与Gd的比率设定于Y∶Gd-4∶1～2∶3范围，可使用一种钇铝石榴石系列荧光体，构成一种可大致沿黑体辐射轨迹发生白色光的发光二极管。此外，若将YAG系列荧光体中的Y与Gd比设定在Y∶Gd＝2∶3～1∶4的范围，即可构成一种可发出低亮度电灯色的发光二极管。而且，借助于将Ce含量(置换量)设定于0.003～0.2的范围，可使发光二极管的相对发光光度在70％以上。含量未满0.003的话，则以Ce来减少光致发光的激励发光中心数，以此降低光度，相反地，若大于0.2，则发生浓度熄光。
如上所述，借助于以Ga来置换组成中的Al的一部分，可使发光波长往短波移动，而藉由以Gd来置换组成中的Y的一部分，则可使发光波长往长波移动。用这种方式变化其组成，即可连续调节发光色。此外，波长为254nm或365nm的话，用Hg辉线几乎不会激励的450nm附近的蓝色系列发光元件的LED光来提高激励效率。峰值波长进一步具备有用来对氮化物半导体发光元件连续地变换Gd的组成比而将蓝色系列发光度变换成白色系列发光的理想条件。
此外，实施形态1借助于组合使用氮化镓系半导体的发光元件，以及以铈活化而在钇铝石榴石系列荧光体(YAG)中含稀土类元素的钐(Sm)的光致发光荧光体，可进一步提高发光二极管的发光效率。
此种光致发光荧光体可使用氧化物或高温下易氧化物作成的化合物来作为Y、Gd、Ce、Sm、Al、Ga的原料，以预定的化学计量比将其充分地混合而制成混合原料，将作为溶剂的氟化铵等氟化物适量混合于制成的混合原料中而装入坩埚中，在空气中1350～1450℃的温度范围内压2～5小时烧成而制得的烘焙品，其次于水中对烘焙品进行球磨，洗净、分离、干燥，最后放入筛子来制得。
在上述制作方法中，混合原料也可以借助于混合共沉氧化物、氧化铝与氧化镓来制造，这种共沉氧化物是将一以草酸共同沉淀一溶解液的共沉物烘焙，而此溶解液是依化学计量比特将Y、Gd、Ce、Sm的稀土类元素溶解于酸。
一般式可用(Y1-p-q-rGepCeqSmr)3Al5O12来表示的光致发光荧光体可借助于结晶中含有Gd，提高尤其是460nm以上长波带的激励发光效率。借助于增加钆含量，可使发光峰值波长往530nm至570nm的长波移动，且所有发光波长也可往长波侧移动。在需要强红发光情形下，可借助于增加Gd的置换量来达成，随着Gd增加，借助蓝色光所发射的光致发光亮度徐徐降低。但是，p宜在0.8以下，0.7以下较佳，而以0.6以上为更佳。
一般式以(Y1-p-q-rGdpCeqSmr)3Al5O12来表示的含有Sm的光致发光荧光体，即使增加Gd含量，也使其很少有温度特性降低的情形发生。也就是说，借助于含有Sm而大幅改善高温下光致发光荧光体发生亮度的劣化。其改善程度随Gd含量增加而变大。特别是，增加Gd含量使光致发光的发光色调具有红色而组成的荧光体由于温度特性劣化，故使其含有Sm而有效改善温度特性。此外，此处所谓的温度特性是相对于450nm的蓝色光在常温(25℃)下所激励的发光亮度的荧光体在高温(200℃)下的发光亮度的相对值(％)。
Sm含量r在0.0003≤r≤0.08的范围最好，因此，可使温度特性达60％以上。若比此范围r小，温度特性的改善效率会变小。此外，若较此范围r大，则相反地，温度特性会降低。此外，Sm的含量在0.0007≤r≤0.02范围更佳，由此可使温度特性达80％以上。
Ce含量q最好在0.003≤q≤0.2范围，由此可使相对发光亮度达70％以上。此处所谓的相对发光亮度是指在以q＝0.03的荧光体的发光亮度为100％情形下的发光亮度。
Ce含量在0.003以下的话，即会为了减少光致发光由Ce激励的发光中心数，而降低亮度，相反地，比0.2大的话，即会发生浓度熄光。此外，所谓浓度熄光是指为了提高荧光体的亮度，用增加活化剂的浓度在某一最适值以上的浓度，发光强度者降低。
在本发明的发光二极管中，也最好混合Al:Ga、Y、Gd与Sm的含量不同的二种以上的(Y1-p-q-rGdpCeqSmr)3Al5O12的光致发光荧光体来使用。由此可增加荧光发光中RGB的波长成分，此外，也可例如借助于使用彩色滤光器来作为全色液晶显示装置用。
(发光元件102、202)
发光元件如图1与图2所示最好埋设于模构件中。本发明的发光二极管所用的发光元件是使以铈活化的石榴石系列荧光体能极有效激励的氮化镓系列化合物半导体。使用氮化镓系列化合物半导体的发光元件102、202是以MOCVD法等将InGaN等的氮化镓系半导体形成于基板上以形成发光层而制成。现列举具有MIS接合、PIN接合与PN结等的同质构造、异质构造或双异质构造来作发光元件的构造。可根据半导体层的材料及其混晶度来对发光波长可以作种种的选择。并且可作成足以使半导体活性层产生量子效果的薄薄的单一量子井构造与多重量子井构造。特别是，在本发明中，借助于使发光元件的活性层成为InGaN的单一量子井构造，能使光致发光荧光体不劣化，并能作为发光较高的发光二极管来使用。
在使用氮化镓系列化合物半导体情形下，半导体基板上可使用蓝宝石、尖晶石、Sic、Si、ZnO等材料，但，最好使用蓝宝石基板，形成结晶性良好的氮化镓。经由GaN、AlN等的缓冲层将PN结形成于此蓝宝石基板上，而以此方式形成氮化稼半导体层。氮化镓系列半导体在不掺杂不纯物状态下呈N型导电性，为了形成具有所要提高发光效率的特性(载流子浓度等)的N型氮化镓半导体，最好以Si、Ge、Se、Te、C等作为N型掺杂剂来进行适宜的掺杂。另一方面，在形成P型氮化稼半导体情况下，则掺杂Zn、Mg、Be、Ca、Sr、Ba等P型掺杂剂。此外，氮化镓系列化合物半导体由于仅掺杂P型掺杂剂难以P型化，故最好在导入P型掺杂剂后，以炉加热，利用低速电子射线照射与等离子照射来进行P型化。利用蚀刻等使P型与N型氮化镓半导体表面露出后，使用溅射法与真空蒸发法在各半导体层上形成所要形状的各个电极。
接着，使用利用切块直接全断的方法，切入比刃端宽的沟中之后(半切)，即利用外力切割半导体圆片的方法，或利用前端的钻石针往复直线运动的划线器，而在半导体圆片上譬如拉出围棋盘格子状的极细划线(经线)的后，利用外力将圆片切割的方法等，将以上所形成的半导体圆片等切割成芯片状。由此，即可形成由氮化镓系列化合物半导体所制成的发光元件。
在本实施形态1的发光二极管发出的白色系列光的情形下，宜考虑与光致发光荧光体的补色关系以及树脂的劣化等而将发光元件的发光波长设定在400nm以上、530nm以下，设定在420nm以上490nm以下则更佳。为了分别提高发光元件与光致发光荧光体的发光效率，更好的是设定在450nm以上475nm以下。图4示出了实施形态1白色系列发光二极管的一发光光谱例子。所述例示的发光二极管是图1所示的引线型，也是后述使用实施例1的发光元件与光致发光荧光体。在图4中，具有450nm附近峰值的发光系列来自发光元件的发光，而具有570nm附近峰值的发光则是发光元件激励的光致发光发出的光。
图16示出了以表1所示荧光与峰值为465nm的蓝色LED(发光元件)组成的白色系列发光二极管可实现的色再现范围。所述白色系列发光二极管的发光色由于位于蓝色LED起源的色度点与荧光体起源的色度点结合的直线上的各个点，故利用使用表1中①～⑦的荧光体，可全面复盖色度图中央部范围极广的白色领域(图16中加上斜线的部分)。图17示出了白色系列发光二极管中荧光体含量变化时发光色变化的情形。这里荧光体含量是以相对于使用在涂覆部的树脂的重量百分比来表示。由图17可知，若荧光体的量增加，即越近荧光体的发光色，若减少的话，则越近蓝色LED。
此外，本发明加设可产生激励荧光体的光的发光元件，也可一并使用不激励荧光体的发光元件。具体地说，加设可激励荧光体的氮化物系列化合物半导体，而同时配置有实质上不激励荧光体，发光层为镓化磷、镓化砷、铝、镓化砷磷与铟化铝磷等的发光元件。由此，来自不激励荧光体的发光元件的光就不会被荧光体吸而放到外部。由此则可作为发出红白光的发光二极管。
以下说明图1与图2的发光二极管的其他结构要素。
(导电性电线103、203)
作为导电性电线103、203，需在电阻性、机械连接性、电气传导性与导热性上极佳。导热性宜为0.01卡/(秒)(cm2)(℃/cm)以上，较佳者为0.5卡/(秒)(cm2)(℃/cm)以上。而且考虑到作业性的话，最好电线的直径在10微米以上45微米以下。特别是，即使使用同一材料于含有荧光体的涂覆部与模构件，由于荧光体进入任何一方所引起的热膨胀系数不同，故导电性电线容易于其界面断线。因此，导电性电线的直径为25微米以上最好，从发光面积与操作是否容易的观点考虑35微米以下为好。作为导电性电线的材质有金、铜、白金、铝等金属与其合金。由于使用此种材质、形状所制成的导电性电线，故利用电线粘接装置，即可容易地与各发光元件的电极、内引线与安装引线连接。
(安装引线105)
安装引线105是由帽部105a与引线105b组成，帽部105a上以装片装置载置发光的102的部分要足够大。并且在将多个发光元件设于帽部内而以安装引线来作为发光元件的共通电极的场合，由于有使用不同电极材料情形，所以必须分别有充分的导电性以及焊线等的连接性。此外，在将发光元件配置于安装引线上的帽部内同时将荧光体充填于帽部的内部情形下，即使来自荧光体的光是其本身所放出，由于由帽部朝所要方向反射，故可防止来自近接配置的其他发光二极管的光所造成的模拟点灯情形。所谓模拟点灯是指即使未供电给接近配置的其他发光二极管，也可看到有发光的现象。
发光元件102与安装此安装引线105的帽部105a的接合可用环氧树脂、丙烯基树脂与亚胺树脂等的热硬化性树脂。此外，使用背面发光元件(是从基板侧发光取出，使发光电极与帽部105相对向地安装)情形下，为了在使所述发光元件与安装引线连接而同时导电，可使用Ag涂浆、碳涂浆与金属拼片等。此外，为了提高发光二极管的光利用效率，最好发光元件也使所配置的安装引线的帽部表面成镜面状而具有表面反射功能。此情形的表面糙度最好为0.1S以上0.8S以下。安装引线的具体的电阻宜为300μΩ·厘米以下，较佳者为3μΩ·厘米以下。安装引线上叠置有多个发光元件情形下发热量大，因此热导度必需良好，所述热导度宜为0.01卡/(秒)(cm2)(℃/cm)，较佳者为0.5卡/(秒)(cm2)(℃/cm)以上。满足此等条件的材料有铁、铜、掺铁的铜、掺锡的铜、金属化型式的陶等。
(内引线106)
内引线106以导电性电线连接于安装引线105上所配置的发光元件102一方的电极。在发光二极管在安装引线上设有多个发光元件情形下，须设有多个内引线106，并配有各导电性电线彼此不接触的各内引线。例如，因为从安装引线离开，所以借助于各内引线的各电线接合端的面积依次加大，可隔开式接合导电性电线间的间隔以防止导电性电线间的接触。考虑内引线与导电性电线连接的端面糙度最好设定在1.6S以上10S以下。
内引线可依所要作成的形状以使用型框的钻孔加工等来形成。内引线钻孔加工形成后，最好进一步借助于从端面方向加压，调整所要端面的面积与端面高度。
内引线与导电性电线即连接电线等的连接必须有良好的连接性与导电性。具体的电阻宜为300μΩ·厘米以下，较佳者为3μΩ·厘米以下。满足所述条件的材料有铁、铜、掺铁的铜、掺锡的铜以及镀有铜、金、银的铝、铁、铜等。
(涂覆部101)
涂覆部101系与模构件104分开而设在安装引线的帽部上，就本实施例形态1而言，是含有用来变换发光元件的发光的光致发光光荧光体。作为涂覆部的具体材料适用者的环氧树脂、尿素树脂、硅酮等耐候性优异的透明树脂与玻璃。并且与光致发光荧光体一起含有扩散剂较佳。最好使用钛氧钡、氧化钛、氧化铝、氧化硅等。此外，在利用喷溅形成荧光体情形下，可省略涂覆部。这种情形，可一面调整膜厚，一面设开口部与荧光体层形成能混色显示的发光二极管。
(模构件104)
模构件104具有自发光元件102、导电电线103与含有光致发光荧光体的涂覆部101等的外部进行保护的功能。本实施形态1最好进一步含有扩散剂于模构件部104中，由此可缓和来自发光元件102的指向性并增加视野角。模构件104在发光二极管中具有一面将来自发光元件的发光聚焦一面扩散的透镜功能。因此，模构件104通常为凸透镜状、进一步为凹透镜状，在形状上作成从发光观测面的为椭圆形状与其形状的多个组合。并且模构件104也最好在构造上将各个不同的材料作为多个叠层。作为模构件104主要的具体材料有环氧树脂、尿素树脂、硅酮树脂等耐候性优异的透明树脂与玻璃。可使用钛氧钡、氧化钛、氧化铝、氧化硅等来作为扩散剂。本发明也最好进一步含有加有扩散剂而放入模构件中的光致发光荧光体、也即，本发明也最好含有光致发光荧光体于涂覆部中，以及于模构件中。借助于含有光致发光荧光体于模构件中，可进一步增大视野角。并且，也最好含在涂覆部分构件二者中。此外，使用含有光致发光荧光体的树脂来作成涂覆部，使用与涂覆部不同材料的玻璃来形成模构件也较佳，利用这种构成，即可制造很少受到水份等的影响而在生产性上极佳的发光二极管。根据其用途，为了使折射率一致，也最好使用相同构件来形成模构件与涂覆部。在本发明中，利用模构件中含有扩散剂与着色剂，可使自发光观测面看得到的荧光体着色隐而不见，同时可提高混色性。即，荧光体在强外光中吸收蓝色成份可发出光，看起来就像是着上黄色。此外，在模构件中所含的扩散剂使模构件成乳白色，而着色剂则进行所要颜色的着色。因此，自发光观侧面观测不到荧光体的颜色。发光元件的主发光波长在430nm以上的话，最好含有作为光安定剂的紫外线吸收剂。
发明的实施2
与本发明有关的实施形态2的发光二极管使用具备有氮化镓系列半导体的元件来作为发光元件，此氮化镓系列半导体具有高能带间隙，并使用含有相互组成不同的二种以上不同的光致发光荧光体，最好是含以铈活化的钇铝石榴石系列荧光体的荧光体来作为光致发光荧光体。由此，实施形态2的发光二极管即使在由发光元件所发LED的发光波长不是依制造色散所得的所要值，也可借助于调整二种以上的荧光体含量来制得有所要色调的发光二极管者。在此情形下，相对于发光波长较短的发光元件，使用发光波长较短的荧光体，借助于使用发光波长较长的荧光体于发光波长较长的发光元件，可使发自发光二极管的发光色恒定。
就有关于荧光体而言，可使用一般式以(Re1-rSmr)3(Al1-sGas)5O12:Ce其中，0≤r＜1，0≤s≤1，而Re则是从Y、Gd与La所选出的至少一种。由于由此在发自发光元件的可见光带中，即使为具有高能量的光长时间作高亮度的照射以及在种种外部环境下使用，荧光体也极少变质，故所构成的发光二极管极少发生发光色色斑与发光亮度降低的情形，并且具有所要高亮度的发光成分。
实施形态2的光致发光荧光体
现详细说明实施形态2的发光二极管所使用的光致发光荧光体。
在实施形态2中，如上所述，光致发光荧光体除使用组成不同的二种以上的以铈活化的光致发光荧光体外，也以相同于实施形态1的方式来构成，且荧光体的使用方法与实施形态1相同。
与实施形态1相同，由于可对光致发光荧光体的分布作种种的变化(按照自发光元件离开情形加上浓度梯度)，故利用使发光二极体具有耐候性极强的特性。这种分布利用由调整含光致发光荧光体的构件、形成温度、粘变与光致发光荧光体的形状、粒度分布等来作种种的调整。此外，实施形态2对应于使用条件，设定荧光体的分布浓度。且实施形态2可借助于对各个发光元件所发出的光进行二种以上荧光体的配置(例如依序从接近发光元件处予以配置)来提高发光效率。
与实施形态1相同，如以上结构的实施形态2发生二极管，构成一种即使在与照度强度为(Ee)＝3W*cm-2以上10W*cm-2以下的高输出发光元件，连接或近接配置情形下，也具有高效率且耐光性充分的发光二极管。
与实施形态1相同，实施形态2所用以铈活化的钇铝石榴石系列荧光体(YAG系列荧光体)，由于具有石榴石的结构，故热、光与水份上极强。且如图5A的实线所示，实施形态2的钇铝石榴石系列荧光体，将激励光谱的峰值设定于450nm附近，并可如图5B的实线所示，将发光光谱的峰值设定于510nm附近，如此即可在频宽上将发光光谱扩展至700nm。由此即可发出绿色系列光。可如图5A的虚线所示，实施形态2的另一以铈活化的钇铝石榴石系列荧光体，使激励光谱的峰值接近450nm，且发光光谱的峰值可如图5B的虚线所示设定于600nm附近，由此即可在频宽上将发光光谱扩展至750nm。由此即发可发生红色系光。
在具有石榴石组成的YAG系列荧光体内，以Ga置换Al的一部分来使发光波长往短波侧移动，且以Gd与/或La置换Y的一部分来使发光波长往长波侧移动。Al对Ga置换最好考虑发光效率与发光波长为Ga∶Al＝1∶1至4∶6。同样地，以Gd与/或La置换Y的一部分，Y∶Gd与/或La＝9∶1至1∶9，较佳者为Y∶Ga与/或La＝4∶1至2∶3。置换比率不满2成的话，绿色成份会增大而红色成份则缩小。且比率是6成以上的话，红色成份会增大而亮度则急递降低。
这种光致发光荧光体可使用以Y、Gd、Ce、La、Al、Sm与Ga作为原料的氧化物与高温下易氧化的氧化物所组合的化合物，并按化学计量比将其混合而制得原料。并且以共沉氧化物、氧化铝与氧化镓混合而制得混合原料，所述共沉氧化物是以草酸共同沉淀一溶解液的共沉物烘焙，而所述溶解液是依化学计量比将Y、Gd、Ce、La、Sm的稀土类元素溶解于酸中。将作为助熔剂的氟化铵等氟化物适量混合而放入坩埚中，在空气中1350～1450℃温度下压2～5小时烘焙而制得烘焙品，其次在水中球磨烘焙品、洗净、分离、干燥，最后通过筛子可制得。在本实施形态中，组成不同的二种以上以铈活化的钇铝石榴石系列荧光体既最好混合使用，并且最好独立配置(譬如叠层)使用。在二种以上荧光体混合使用情况下，形成产量性佳的色变换部较简单，而二种以上的荧光体独立配置情形下，可借助于形成所要颜色或使其混合，而在形成后予以色调整。此外，在荧光体各自独立配置情形下，最好接近LED元件处设有易于在较高波长侧吸收光而发光的荧光体，并在离LED较远处配置易于在较长波侧吸收发光的荧光的荧光体。由此可有效吸收并发光。
如上所述，本实施形态2的发光二极管使用组成不同的二种以上钇铝石榴石系列荧光体。由此可构成一种所欲发光色可有效发光的发光二极管。即，半导体发光元件所发的光的发光波长在图6所示色变图的A点至B点线上的位置情况下，即可发出组成不同的二种以上的钇铝石榴石系列荧光体色度，即图6的A点、B点、C点及D点所围住的斜线内的任一发光色。实施形态2可借助于LED元件、荧光体的组成或其量作种种选择来调节。特别是，对应于LED元件的发光波长，借助于由对荧光体的选择来补偿LED元件的发光波长的色散，由此可构成发光波长的色散极少的发光二极管。此外，可借助于由选择荧光体的发光波长来构成含高亮度的RGB发光成份的发光二极管。
此外，由于实施形态2所用的钇铝石榴石系(YAG系)荧光体是由石榴石组成，故实施形态2的发光二极管可长时间高亮度的发光。而且，实施形态1与2的发光二极管从发光观测面看，经由荧光体设有发光元件。由于所使用荧光物质于比来自发光元件的光的波长侧发光，故可有效发光。此外，变换过的光由于也变成在较发自发光元件的光长的波长侧，故也比发光元件的氮化物半导体层的带间隙小，而难以为所述氮化物半导体层所吸收。为了使荧光体等向发光，所发出的光虽也朝向LED元件，但由于荧光体所发出的光不为LED元件所吸收，故不会降低发光二极管的发光效率。
(面状发光光源)
图7表示有关于本发明的另一实施形态的面状发光光源例子。
图7所示面状发光光源是涂覆部701所含实施例1或2所用的光致发光荧光体。由此，氮化镓系列发光元件所发蓝色系光藉涂覆部作色变换后，即经由导光板704与散射片706成面状发出。
详细地说，在图7的面状发光光源中，发光元件702固定于绝缘层与导电晶体点阵(未表示)所形成的コ字形金属基板703内。发光元件的电极与导电晶体点阵导通的后，即将光致发光荧光体与环氧树脂混合而充填于载装有发光元件702的コ字基金属基板703内部。如此固定的发光元件702以环氧树脂等固定在具有丙烯基性质的导光板704的一侧端面。在未形成有导光板704一侧的主面上的散射板706的部分上形成含有白色散射剂的膜状反射构件707，以防止点状发光的荧光现象。
同样地，在结构上，在导光板704的另一侧整个主表面(里面侧)以及未配置有发光元件的另一侧端面上，设有反射构件705以提高发光效率。由此可构成一种例如LCD背光用而具有充分明亮度的面状发光的发光二极管。
使用这种面状发光的发光二极管的液晶显示器系例如经由在透光性导电液晶点阵所形成的玻璃基板间(未表示)注入液晶的液晶装置，将偏光板配置于导光板704的一侧主面上而构成。
图8、9表示有关于本发明的其他实施形态的面状发光装置实例。图8所示的发光装置是以经由光致发光荧光体所含有的色变换构件701变换成白色系光后，借助于导光板704将发光二极管702所产生的蓝色系列光成面状发出的方式构成。
图9所示的发光装置是按以导光板704形成面状后，借助于导光板704一侧的主表面上所形成具有光致发光荧光体的散射片706，将发光元件702所发射的蓝色系光变换成白色光而发出面状白色光的方式构成。此外，光致发光荧光体也最好含于散射片706内，或者，也最好与粘合剂树脂一起涂覆在散色片706上而形成片状。此外，也最好不将在导光板704上的含光致发光荧光体的粘合剂形成为片状，而直接形成为点状。
<应用例>
(显示装置)
接着说明有关于本发明的显示装置。图10表示有关于本发明的显示装置结构的方块图。所述显示装置如图10所示，由LED显示器601以及具备有驱动电路602、影像数据存储装置603与色调控制装置604的驱动电路610所构成。LED显示器601，如图11所示，是被用来作为于框体504成矩阵状排列有图1或图2所示的白色系列的发光二极管501的黑白LED。与框体504一体形成的蔽光构件505。
如图10所示，驱动电路610，可包括有：
影像资料存储装置(RAM)603，暂时存储所输入的显示数据；色调控制装置604，根据自RAM603读出的数据，运算而输出LED显示器601的各个发光二极管成预定亮度点灯用的色调信号；以及驱动器602，根据输出自色调控制装置604的信号，将发光二极管点亮。色调控制装置604取出存储于RAM603的数据，运算LED显示器601的发光二极管点灯时间，并于LED显示器601输出闪烁脉冲信号。在如上所述结构的显示装置中，LED显示器601可根据从驱动电路输入的冲动信号，显示对应于显示数据的影像，从而具有以下优点。
即，使用RGB的三个发光二极管而作白色系列显示的LED显示器，由于有必要调节显示RGB的各发光二极管的发光输出，故须考虑各发光二极管的发光强度、温度特性等，而控制各发光二极管，因此，驱动所述LED显示器的驱动电路有过于复杂的问题。此外，在本发明的显示装置中，LED显示器601并不使用RGB的三种发光二极管，由于结构上所使用的有关于本发明的可发出白色系光的发光二极管501，故驱动电路无需对RGB的各个发光二极管作个别的控制，故可使驱动电路结构成简单，并使显示装置价廉。
使用RGB的三种发光二极管而显示白色系列的LED显示器，为了将RGB的三种发光二极管组合而作白色显示于每一象素，必须同时分别使三种发光二极管发光而将其混色，故相当于一象素的显示领域会加大而无法作极精细的显示，此外，本发明的显示装置中LED显示器，由于可用一个发光二极管来作白色显示，故可作较高度精细的白色系显示。借助于三种发光二极管的混色来显示的LED显示器依所见方向与角度而变化，各RGB的发光二极管会有某一部分被蔽光而显示色产生变化的情形发生，本发明的LED显示器则无这种现象。
如上所述LED显示器使用本发明的可发白色系列光的发光二极管，包括所述LED显示器的显示器具有较高度精细化，可作安定的白色显示，并可使色斑减少的特长。用本发明的可作白色显示的LED显示器与已知仅用红色、绿色的LED显示器相比，对人体眼睛的刺激极少而适合长时间的使用。
(使用本发明的发光二极体的其他显示装置实例)
如图12所示，借助于使用本发明的发光二极管，即可构成以本发明的发光二极管加上RGB的三种发光二极管者作为一象素的LED显示器。而借助于使所述LED显示器与规定的驱动电路连接，即可构成一种能显示种种图像的显示装置。与单色显像的显示装置一样，本显示装置中的驱动电路包括：一影像数据存储装置(RAM)，暂时存储所输入的显示数据；色调控制装置，根据RAM所存储的数据，运算使各发光二极管而预定亮度点高用的色调信号；以及驱动器，切换色调控制电路的输出信号来而将各发光二极管点亮。此外，所述驱动电路需有分别控制RGB与发射白色系光的各发光二极管的专用控制电路。色调控制电路由RAM所存储的数据来运算各个发光二极管的点灯时间，并将闪烁的脉冲信号输出。在进行白色系列显示情形下，使点亮RGB各发光二极管的脉冲信号的脉冲宽度缩短，或者使脉冲波信号的主峰值降低，以至于不输出全部的脉冲波信号。另一方面，供给脉冲波信号到白色系列发光二极管，(即，对其进行补偿即缩短冲波信号的脉冲宽度，降低冲波信号的峰值，以至于不输出全部冲波信号的部分予以补偿)。由此作LED显示器的白色显示。
这样，借助于由追加白色发光二极管于RGB的发光二极管，即可提高显示器的亮度。以RGB的组合来进行白色显示的话，虽然无法根据目视角强调RGB中的各一或二色而显示纯粹的白色，借助于由追加用于本显示装置的白色发光二极管，即可解决这一问题。
此种显示装置中的驱动电路最好以CPU作为色调控制电路来演算白色系列发光二极管或所要亮度点亮用的脉冲波信号。输出白色调控制电路脉冲波信号到输入白色系列发光二极管的驱动器而将使驱动器切换。如果驱动器导通，则白色系列发光二极管则点亮，关闭的话，则熄灭。
(信号机)
使用本发明的发光二极管来作为本身为显示装置的一种的信号机所具的特点为，除可长时间稳定发光外，而且，即使发光二极管的一部分熄灭，也不会产生色斑。使用本发明发光二极管的信号机的概略结构，是依预定排列方式将白色发光二极管配置在导电晶体点阵所形成的基板上，以串联或串并联连接此种发光二极管的发光二极管电路为发光二极管组。使用二个以上发光二极管组而分别成螺旋状配置发光二极管。如果所有发光二极管给予配置的话，则全面配置成圆形。分别以焊料将各发光二极管与从基板与外部电力连接的电源线焊接后，即固定于铁道信号用的框体内。LED显示器配置在装有蔽光构件的铝铸框体内而以硅胶充填材料固于表面上。框体的显示面设有白色透镜。且LED显示器的电气配线为了自框体里面将框体密闭，经由橡胶相通而密闭于框体。如此即可形成白色系信号机。可将本发明的发光二极管配置成自分开多组的中心部向外勾勒轮子的螺旋形，借助于由并联连接构成可靠度高的信号机。在这种情形下，可借助于由自由中部向外勾勒轮子而构成可靠度高的信号机。自中心部向外侧勾勒轮子，包括在连接勾勒轮子与断续的配置。此外，考虑到LED显示器的显示面积等，可对所配置的发光二极管的数目与发光二极管组的数目作种种的选择。因此，信号机，即使因一方发光二极管组与一部分发光二极管中任一个有问题而造成熄灯，也可借助于由另一方发光二极管组与剩下的发光二极管使信号机作均匀的圆形发光，而不致于产生色斑。由于螺旋状配置，故能紧密配置在中心部，不管电灯发光信号为何，均可作协调的驱动。
<实施例>
下面，虽然对本申请的发明的实施例进行说明，但本发明并不限于下述的实施例，现说明如下。
(实施例1)
实施例1是以用于GaInN半导体的发光峰值系450nm、半宽度300nm的发光元件用来作为发光元件的例。实施例1的发光元件是在洗净的蓝宝石基板上使TMG(三甲基镓)气体、TMI(三甲基铟)气体、氮气及掺杂气体来与载体气体一起滚动，以MOCVD法使氮化镓系列化合物半导体成膜而制造。成膜时，借助于转换Si，H4与Cp2Mg来作为掺杂气体，形成具有N型导电性的氮化镓半导体与具有P型导电性的氮化镓半导体。实施例1的LED元件具备一有N型导电性的氮化镓半导体的接触层、一有P型导电性的氮化镓铝作为包覆层以及一有P型导电性的氮化镓半导体层的接触层，形成一由非掺杂InGaN所形成的活性层，以构成在具有N型导电性的接触层与具有P型导电性的包覆层之间的厚度约为3nm的单一量子井，且在蓝宝石基板上在低温下形成氮化镓半导体层来作为缓冲层。而且，P型氮化镓半导体成膜后在400℃以上的温度进行热焙(anneal)。
借助于蚀刻使P型与N型的各半导体表面露出后，再借助于溅射分别形成n侧p侧的各电极。在如此作成的半导体圆片上划线的后，即施加外力切割成各个发光元件。
以环氧树脂将如上所述制成的发光元件接合于镀银安装引线的帽部后，即用直径为30微米的金线分别对发光元件的各电极、安装引线与内引线进行线接合而制成引线型发光二极管。
光致发光荧光体是以草酸来与一以预定化学计量比将Y、Gd、Ce等稀土元素溶解于酸的溶解液共同沉淀，锻烧沉淀物而获得的共同沉淀氧化物与氧化铝混合，将作为熔剂的氟化铵混合于此混合原料，而放入坩埚中，在空气中400℃温度下锻烧3小时后，使用球磨湿式粉碎、洗净、分离、干燥后，最后通过筛子而制成。
其结果，如果光致发光荧光体为Y用约2成的Gd来置换的铟、铝氧化物的话，则形成为(Y0.8Gd0.2)3Al5O12:Ce。且Ce的置换为0.03。
其结果，形成为(Y0.8Gd0.2)3Al5O12:Ce荧光体80重量部分与环氧树脂100重量部分充分混合成浆料，在将此浆料注入到载装发光元件的安装引线的帽部内后，即在130℃温度下硬化一小时。而后则在发光元件上形成含有120微米厚的光致发光荧光体的涂覆部。本实施例1是在涂覆部中光致发光荧光体向着发光元件逐渐增多的方式分布而构成的。照射强度约为3.5W/cm2。此后即进一步在外部应力、水份与尘埃等方面保护发光元件与光致发光荧光体的目的下，形成透光性环氧树脂来作为模构件。就此点而言，模构件系在炮弹型的型框中接合于引线框，将覆盖在含光致发光荧光体的涂覆部上的发光元件插入，注入透光性环氧树脂后，150℃下硬化5小时而形成。
要点是，所形成的发光二极管的自发光观测正面的是着色成依光致发光荧光体的体色中央部分带有黄色。
而后，所获得的白色系列经测定可发光的发光二极管的色度点、色温度与光效性指数的结果显示接近色度点(X＝0.302、Y＝0.280)、色温度8080K、光效性指数(Ra)＝87.5的三波长型荧光体的性能。且发光效率若为9.51m/w则系白色电灯的类型。而且，即使在温度25℃ 60mA通电、温度25℃ 20mA通电、温度60℃90％RH的情况下20mA通电的各寿命试验中观测不到荧光体所造成的变化，也可确定与一般蓝色发光二极管寿命特性上并无差别。
(比较例1)
除了由(Y0.8Gd0.2)3Al5O12:Ce荧光体将光致发光荧光体作成(ZnCd)S:Cu、Al外，均与实施例1一样，形成发光二极管与进行寿命试验。所形成的发光二极管通电后，马上跟实施例1一样，确认出白色系列的发光，但亮度则减低。在寿命试验中，约100小时输出为零。劣化原因解析结果是荧光体黑化。
根据发光元件所发出的光与附着于荧光体的水份或自外部环境进入的水份进行光分解而在荧光体结晶表面析出胶状亚铅金属，兹认为这是外观上变成黑色的东西。图13示出了将温度25℃ 20mA通电、温度60℃90％RH下的20mA通电的寿命试验结果与实施例1的结果。亮度显示有作为基准的初期值与各个相对值。图13中，实线表示与实施例1，而波状线则表示比较例。
(实施例2)
实施例2的发光二极管借助于在发光元件的氮化物系列化合物半导体的In含量比实施例1的发光元件增多，故使发光元件的发光峰值为460mm，并且光致发光荧光体的Gd含量增加也比实施例1多而作成(Y0.6Gd0.4)3Al5O12:Ce外，也与实施例1一样制造发光二极管。
如以上所制成的发光二极管可发白色系列光，测定其色度点、色温度与光效性指数，分别为，色度点(X＝0.375、Y＝0.370)，色温度4400K，光效性指数(Ra)＝86.0。
图18A、图18B与图18C分别表示实施例2的光致发光荧光体、发光元件与发光二极管的各发光光谱。
制造100个实施例2的发光二极管，相对于初期光度发光1000小时后调整光度。结果，以初期(寿命试验前)的光度为100％，历经1000小时后的平均光度经确认平均为98.8％，特性上并无差别。
(实施例3)
实施例3的发光二极管除使用在Y、Gd、Ce稀土类元素中进一步含有Sm，一般式为(Y0.39Gd0.57Ce0.03Sm0.01)3Al5O12荧光体来作光致发光荧光体外，也与实施例1一样来制造。制造100个发光二极管，在130℃高温下评价结果，与实施例1的发光二极管比较，平均温度特性到8％左右是良好的。
(实施例4)
实施例4的LED显示器实施例1的发光二极管成16×16矩阵状排列在如图11所示形成铜图形的陶瓷基板上而构成。并且，就实施例4的LED显示器而言，排列有发光二极管的基板配置在由酚树脂制成而使蔽光构件505一体成形的框体504内，并且以色料着上黑色的硅胶506充填除发光二极管的前端部外的框体、发光二极管、基板与蔽光构件的一部分。且基板与发光二极管的连接是用自动焊接安装装置来进行焊接。
经确认，以具备如以上结构的LED显示器、即可以其作为黑白LED显示装置来使用，所述结构是：暂时存储所输入显示数据的RAM、取出RAM的存储数据而演算发光二极管成预定亮度点灯用的色调信号的色调控制电路以及以色调控制电路的输出信号切换而使发光二极管点亮的驱动器的驱动装置予以驱动，即可以其作为黑白LED显示装置来使用。
(实施例5)
实施例5的发光二极管除使用以一般式为(Y0.2Gd0.8)3Al5O12:Ce的荧光体来作为光致发光荧光体外，其他均与实施例1一样来制造。制造100个实施例5的发光二极管来测定诸特性。
其结果，色度点(平均值)为(X＝0.450、Y＝0.420)而可发出电灯色的光。
图19A、图19B与19C分别表示实施例5的光致发光荧光体、发光元件与发光二极管的各发光光谱。
实施例5的发光二极管比实施例1的发光二极管亮度约低40％，寿命试验显示与实施例1一样具有极佳耐候性。
(实施例6)
实施例6的发光二极管除使用一般式以Y3Al5O12:Ce表示的荧光体来作为光致发光荧光体外，其他均与实施例1一样来制造。制造100个实施例6的发光二极管来测定其特性。
其结果，与实施例1比较，可发出略带一点黄绿色的白色光。
图20A、20B与20C分别表示实施例6的光致发光荧光体、发光元件与发光二极管的各发光光谱。
实施例6的发光二极管在寿命试验中显示与实施例1同样有极佳耐候性。
(实施例7)
实施例7的发光二极管除使用一般式以Y3(Al0.5Ga0.5)5O12:Ce来表示的荧光体来作为光致发光荧光体外，其他均与实施例1一样来制造。制造100个实施例7的发光二极管来测定其特性。
其结果，实施例7的发光二极管可发出亮度低而带有一点绿色的白色光，并且在寿命试验中显示与实施例1相同有极佳耐候性。
图21A、图21B与图21C分别表示实施例7的光致发光荧光体、发光元件与发光二极管的各发光光谱。
(实施例8)
实施例8的发光二极管除使用一般式以Gd3(Al0.5Ga0.5)5O12:Ce表示而不含Y的荧光体来作为光的发光荧光体外，其他均与实施例1一样来制造。制造100个实施例8的发光二极管来测定其特性。
其结果，实施例8的发光二极管亮度低，在寿命试验中显示与实施例1相同有极佳耐候性。
(实施例9)
实施例9的发光二极管是具有如图7所示结构的面状发光的发光装置。
使用发光峰值为450nm的In0.05Ga0.95N半导体来作为发光元件。发光元件是使TMG(三甲基镓)气体、TMI(三甲基铟)气体、氮气与掺杂剂气体与载体气体一起流动于洗净的蓝宝石基板上，而以MOCVD法使氮化镓系列化合物半导体成膜而形成。借助于将SiH4与Cp2Mg掺杂剂气体进行转换，形成具有N型导电性的氮化镓半导体与具有P型导电性的氮化镓半导体而形成PN结。形成具有N型导电性的氮化镓半导体接触层、具有N型导电性的氮化镓半导体包覆层、具有P型导电性的氮化镓半导体包覆层与具有P型导电性的氮化镓接触层者来作为半导体发光元件。在具有N型导电性的包覆层与具有P型导电性的包覆层的间形成双异质接合的Zn掺杂InGaN的活性层。且在蓝宝石基板上低温形成氮化镓半导体而用来作为缓冲层。P型氮化物半导体层在成膜后在400℃以上温度进行烘焙。
在各半导体成膜后，利用蚀刻使PN各半导体表面露出，然后，利用溅射分别形成各电极，接着对作好的半导体圆片划线，再以外力切割而形成发光元件。
以环氧树脂将发光元件接合在具有帽部于镀银的铜制引线框前端的安装引线上。分别以直径为30微米的金线，对发光元件的各电极与安装引线及内引线作线接合而使其电气导通。
模构件是在将炮弹型的型框中配置有发光元件的引线框插入而混入透光性环氧树脂后，在150℃下压5小时予以硬化而形成蓝色系列发光二极管。将蓝色光二极管连接于整个端面研磨过的丙烯基导光板的一端面，丙烯基板的板面与侧面若作为白色反射构件则以分散于丙烯基系列粘合剂中的钛酸钡来网印并硬化。
光致发光荧光体按化学计量比，将绿色系与红色系分别所需的Y、Gd、Ce、La稀土类元素溶解于酸中，而使草酸与此溶解液共同沉淀。将烘焙而得的氧化物与氧化铝、氧化镓混合而分别获得混合原料。将作为助熔剂的氟化铵混合于此等原料而放入坩埚中，在空气中1400℃温度范围内烘焙3小时而得烘焙品。在水中分别球磨烘焙品、洗净、分离、干燥，最后通过筛子形成。
将如以上所制成一般式为Y3(Al0.6Ga0.4)5O12:Ce而可发绿色光的第1荧光体的120重量、按同样方式制成一般式为(Y0.4Gd0.6)3Al5O12:Ce而可发红色光的第2荧光体的100重量部分、与环氧树脂的100重量部分充份混合成为浆料，使用多重涂覆器在0.5毫米厚的丙烯基层上将此浆料均匀涂布、干燥来形成30微米厚的作为色变换构件的荧光膜。将荧光体层切成与导光板的主发光面同样大小，而配置在导光面上，由此作成面状发光装置。如上所制成的发光装置其色度点与光效性指数经测定结果显示，色度点(X＝0.29，Y＝0.34)，光效性指数(Ra)92.0，具有接近三波长型荧光灯的性能。且发光效率若为121m/w，即属白色电灯的类型。此外，若作耐候性试验，也无法在室温60mA通电、60℃90％RH下20mA通电的各试验中观测到荧光体所造成的变化。
(比较例2)
除了分别使用二萘嵌苯系列锈导体的绿色有机荧光体(SINLOIHI化学制FA-001)与红色有机荧光颜料(SINLOIHI化学制FA-005)代换实施例9中一般式以Y3(Al0.6Ga0.4)5O12:Ce表示的可发绿色系列光的第1荧光体与一般以(Y0.4Gd0.6)3Al5O12:Ce表示的可发红色系光的第2荧光体而同量混合搅拌外，与实施例9相同制造发光二极管，并与实施例9相同进行耐候试验。所制造比较例1发光二极管的色度点为(X＝0.34，Y＝0.35)。若是耐候性试验，则测定大约等于太阳光一年份的200小时碳电弧紫外线下随着时间的亮度保持率与色调。此结果与实施例9分别表示于图14与图15中。由图14、15可知，在各试验中，实施例9劣化较比较例2少。
(实施例10)
实施例10的发光二极管为引线型发光二极管。
实施例10的发光二极管与实施例9相同使用，具有制成450nm的In0.05Ga0.95的发光的发光元件。以环氧树脂将发光元件接合于镀银的铜制安装引线前端的帽部上，然后由金线接合使发光元件的各电极与安装引线即内引线电气导通。
另一方面，光致发光荧光体分别如以下混合使用一般式以Y3(Al0.5Ga0.5)5O12:Ce来表示的可发绿色系光的第1荧光体与一般式以(Y0.2Gd0.8)3Al5O12:Ce来表示的可发红色系光的第2荧光体。即，用草酸以化学计量比，使必要的Y、Gd、Ce稀土类元素溶解于酸的溶解液共同沉淀。若将其烘焙而得的共沉氧化物，则混合氧化铝、氧化镓而分别获得混合原料。混合作为熔剂的氟化铵而放入坩埚中。在空气中1400℃温度范围内烘焙而分别制得烘焙品。在水中球磨烘焙品、洗净、分离、干燥，最后通过筛子，而制成预定粒度的第1与第2荧光体。
将以上所制成的第1荧光体与第2荧光体的分别的40重量部分与环氧树脂的100重量混合成浆料，将此浆粒注入配置有发光元件的安装引线上的帽部。注入后，即将含有所注入光致发光荧光体的光致发光荧光体以130℃压1小时硬化。而后在发光元件上形成含有厚度为120μ的光致发光荧光体的涂覆构件。并且，所述涂覆构件以在接近发光元件处徐徐增加光致发光荧光体量的方式形成。然后，则进一步在保护发光元件与光致发光致发光荧光体使其免于外部压力、水份与尘埃的目的下形成作为模构件的透光性环氧树脂。模构件是在插入炮弹型型框中形成有光致发光荧光体的涂覆部的引线框而混入环氧树脂后，以150℃压5小时予以硬化。如此制成的实施例10自发光观测正面看的，中央部分是按光致发光荧光体色着色成略带黄色。
如上所制成的实施例2的色度点、色温度、光效性指数经测定结果，色度粘为(X＝0.32，Y＝0.34)，光效性指数为(Ra)＝89.0，发光效率为101m/w。且若进一步作耐候试验，即使在室温60mA通电、室温20mA通电、60℃90％RH下20mA通电的各试验中也观测不到光致发光荧光体所引起的变化，可确认与一般的蓝色系列发光二极管在寿命特性上并无差别。
(实施例11)
使用发光峰值为470nm的In0.4Ga0.6N半导体来作为LED元件。发光元件是使TMG(三甲基镓)气体、TMI(三甲基铟)气体、氮气与搀杂气体在洗净的蓝宝石基板上流动，而借助于MOCVD法使氮化镓系列化合物半导体成膜而制成。借助于替换作为掺杂气的SiH4与Cp2Mg形成具有N型导电性的氮化镓半导体与具有P型导电性的氮化镓半导体，从而形成PN结。形成是具有P型导电性的氮化镓铝半导体的包覆层和是具有P型导电性的氮化镓半导体的接触层来作为LED元件。借助于在具有N型导电性的接触层与具有P型导电性的包覆层之间形成3nm的非掺杂InGaN的活性层来形成单一井结构。并在蓝宝石基板上低温形成氮化镓半导体作为缓冲层。
如上形成各层后，利用蚀刻使PN各半导休表面露出，利用喷溅形成p侧与n侧的各电极。而后，将作好的半导体圆片划线，利用外力切割而形成发光元件。
使用环氧树脂将所述发光元件接合于镀银的铜制安装引线的帽部。分别以直径30微米的金线使发光元件的各电极与安装引线与内引线实现线接合而电气导通。
模构件是在将炮弹型型框中配置有发光元件的引线框插入并混入透光性环氧树脂后，以150℃压5小时予以硬化而形成蓝色系列发光二极管，将蓝色系列发光二极管连接于整个端面经研磨的丙烯基导光板的一端面。丙烯基板的板面与侧面将分散于丙烯基系列粘合剂中的作为白色反射构件的钛酸钡网印并硬化而形成膜状。
另一方面，光致发光荧光体以后述方式制造并混合，使用一般式以(Y0.8Gd0.2)3Al5O12:Ce表示而可发较短波侧的黄色系列光的荧光体与一般式以(Y0.4Gd0.6)3Al5O12:Ce表示可发较长波侧的黄色系列光的荧光体。这种荧光体以草酸使按化学计量比将各个必要的Y、Gd、Ce稀土类元素溶于酸中的溶解液共同沉淀。若将其烘焙而制得的其沉氧化物，则混合氧化铝而制得混合原料。混合作为助熔剂的氟化铝而放入坩埚内，在空气中1400℃温度范围压清洗3小时烘焙而制得烘焙品。在水中分别球磨烘焙品、洗净、分离，最后通过筛子而制成。
将以上方式所制成较短波长侧黄色系列荧光体100重量、较长波长侧黄色系列荧光体100重量与丙烯基树脂1000重量混合压出成形，形成180微米厚的作为色变换构件用的荧光体膜。将荧光体膜切割成与导光板主发光面同样大小而配置在导光板上以制成发光装置。用这种方式所制成实施例3的发光装置其色度点、光效性指数经测定结构显示，色度点为(X＝0.33，Y＝0.34)，光效性指数为(Ra)＝88.0，而发光效率则为101m/w。
图22A、图22B和图22C分别表示实施例11所用一般式以(Y0.8Gd0.2)3Al5O12:Ce表示的荧光体、一般以(Y0.8Gd0.2)3Al5O12:Ce表示的荧光体与发光元件的各发光光谱。图23表示实施例11发光二极管的发光光谱。进一步作耐候试验，即在室温60mA通电、室温20mA通电、60℃90％RH下20mA通电的各试验中，也观测不到起因于荧光体的变化。同样地，即使来自发光元件的波长有所变化，也可借助于对所述荧光体的含量作种种变化来维持所欲色度点。
(实施例12)
实施例12的发光二极管除使用一般式以Y3In5O12:Ce来表示而不含铝的荧光体来作为光致发光荧光体外，也与实施例1相同，制造100个这样的发光二极管。实施例9的发光二极管在亮度低的寿命试验中显示与实施例1同样优异的耐候性。
(工业实用性)
如以上说明所示，本发明的发光二极管可发出具有所要颜色的光，即使长时间高亮度使用发光效率也极少劣化，且耐候性极佳。因此，不限于一般电子设备，也可作需要，高可靠度的车载用、航空产业用、港内浮标显示用及高速公路标识照明等的屋外显示与照明，并能开发其新的用途。

Claims (6)

1.一种发出白色光的装置的制造方法，准备一般式以(Y1-rGdr)3Al5O12:Ce表示的荧光体，其中，0≤r≤1，Al的一部分由Ga和/或In置换；用一种半透明的树脂与所述荧光体混合成浆状混合物；所述的浆状混合物涂撒在一个安装座上，蓝色发光二极管芯片设置在所述的安装座上；使含有所述的荧光体的浆状混合物，直接地或间接地覆盖所述的蓝色发光二极管芯片而形成涂覆构件；所述的涂覆构件吸收由所述的蓝色发光二极管芯片发出的光的一部分，发出不同于被吸收的蓝色光的波长的光由所述的涂覆构件所发出的光与所述蓝色发光二极管芯片所发出的未被所述涂覆构件所吸收的光组合成白色光。
2.如权利要求1所述的发出白色光的装置的制造方法，其特征在于，所述的荧光体是，一球状物在有水的条件下进行研磨、洗涤、分离、干燥和筛分的方法制造的荧光体。
3.如权利要求1所述的发出白色光的装置的制造方法，其特征在于，把所述的荧光体混合成浆状混合物步骤，是把两种或两种以上的所述的荧光体与一种半透明的树脂混合。
4.如权利要求1所述的发出白色光的装置的制造方法，其特征在于，所述浆状混合物涂撒在一个安装座上的步骤是分两步或两步以上的步骤、并使用荧光体与树脂的不同的混合比例的浆状混合物。
5.如权利要求1至4中任何一项的一种发出白色光的装置的制造方法，其特征在于，所述的蓝色发光二极管芯片是由蓝宝石(Sapphire)、尖晶石(spinel)、碳化硅(SiC)、硅与氧化锌(ZnO)中所选的一种材料来制造基底的芯片。
6.如权利要求1至5中任何一项的一种发出白色光的装置的制造方法，其特征在于，所述安装座上有一帽状构件，所述蓝色发光二极管芯片通过含银的还氧树脂与所述帽状构件附着，所述浆状混合物灌入所述帽状构件。
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Families Citing this family (1458)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3404064B2 (ja) * 1993-03-09 2003-05-06 株式会社日立製作所 半導体装置及びその製造方法
US6013199A (en) 1997-03-04 2000-01-11 Symyx Technologies Phosphor materials
US6153971A (en) * 1995-09-21 2000-11-28 Matsushita Electric Industrial Co., Ltd. Light source with only two major light emitting bands
US6041345A (en) * 1996-03-08 2000-03-21 Microsoft Corporation Active stream format for holding multiple media streams
US6600175B1 (en) 1996-03-26 2003-07-29 Advanced Technology Materials, Inc. Solid state white light emitter and display using same
US20040239243A1 (en) * 1996-06-13 2004-12-02 Roberts John K. Light emitting assembly
DE19638667C2 (de) 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
KR20040111701A (ko) * 1996-06-26 2004-12-31 지멘스 악티엔게젤샤프트 발광 변환 소자를 포함하는 발광 반도체 소자
TW383508B (en) 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
US6613247B1 (en) 1996-09-20 2003-09-02 Osram Opto Semiconductors Gmbh Wavelength-converting casting composition and white light-emitting semiconductor component
DE19655445B3 (de) * 1996-09-20 2016-09-22 Osram Gmbh Weißes Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionsschicht und Verwendung solcher Halbleiterbauelemente
DE19655185B9 (de) * 1996-09-20 2012-03-01 Osram Gesellschaft mit beschränkter Haftung Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
JP3378465B2 (ja) * 1997-05-16 2003-02-17 株式会社東芝 発光装置
US6623670B2 (en) 1997-07-07 2003-09-23 Asahi Rubber Inc. Method of molding a transparent coating member for light-emitting diodes
US6319425B1 (en) * 1997-07-07 2001-11-20 Asahi Rubber Inc. Transparent coating member for light-emitting diodes and a fluorescent color light source
US5847507A (en) * 1997-07-14 1998-12-08 Hewlett-Packard Company Fluorescent dye added to epoxy of light emitting diode lens
EP1014455B1 (en) 1997-07-25 2006-07-12 Nichia Corporation Nitride semiconductor device
US20030133292A1 (en) 1999-11-18 2003-07-17 Mueller George G. Methods and apparatus for generating and modulating white light illumination conditions
US7161313B2 (en) * 1997-08-26 2007-01-09 Color Kinetics Incorporated Light emitting diode based products
US7014336B1 (en) 1999-11-18 2006-03-21 Color Kinetics Incorporated Systems and methods for generating and modulating illumination conditions
US6806659B1 (en) * 1997-08-26 2004-10-19 Color Kinetics, Incorporated Multicolored LED lighting method and apparatus
US6340824B1 (en) * 1997-09-01 2002-01-22 Kabushiki Kaisha Toshiba Semiconductor light emitting device including a fluorescent material
JPH11135838A (ja) * 1997-10-20 1999-05-21 Ind Technol Res Inst 白色発光ダイオード及びその製造方法
WO1999033934A1 (fr) * 1997-12-24 1999-07-08 Hitachi Medical Corporation Luminophores et detecteurs de rayonnement et unites de tomodensitometrie formes a partir de ces luminophores
US6469322B1 (en) 1998-02-06 2002-10-22 General Electric Company Green emitting phosphor for use in UV light emitting diodes
US6252254B1 (en) 1998-02-06 2001-06-26 General Electric Company Light emitting device with phosphor composition
US6294800B1 (en) 1998-02-06 2001-09-25 General Electric Company Phosphors for white light generation from UV emitting diodes
JP3541709B2 (ja) * 1998-02-17 2004-07-14 日亜化学工業株式会社 発光ダイオードの形成方法
JP3900144B2 (ja) * 1998-02-17 2007-04-04 日亜化学工業株式会社 発光ダイオードの形成方法
FR2775250B1 (fr) * 1998-02-24 2000-05-05 Wilco International Sarl Moyen d'eclairage pour aeronef compatible avec un systeme de vision nocturne
US20080042554A1 (en) * 1998-05-18 2008-02-21 Kabushiki Kaisha Toshiba Image display device and light emission device
JP3645422B2 (ja) * 1998-07-14 2005-05-11 東芝電子エンジニアリング株式会社 発光装置
JP2000081848A (ja) * 1998-09-03 2000-03-21 Semiconductor Energy Lab Co Ltd 液晶表示装置を搭載した電子機器
US6335548B1 (en) * 1999-03-15 2002-01-01 Gentex Corporation Semiconductor radiation emitter package
ES2299260T5 (es) † 1998-09-28 2011-12-20 Koninklijke Philips Electronics N.V. Sistema de iluminación.
US6404125B1 (en) * 1998-10-21 2002-06-11 Sarnoff Corporation Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes
US6366018B1 (en) * 1998-10-21 2002-04-02 Sarnoff Corporation Apparatus for performing wavelength-conversion using phosphors with light emitting diodes
US6429583B1 (en) 1998-11-30 2002-08-06 General Electric Company Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors
US6299338B1 (en) 1998-11-30 2001-10-09 General Electric Company Decorative lighting apparatus with light source and luminescent material
JP2000208822A (ja) * 1999-01-11 2000-07-28 Matsushita Electronics Industry Corp 半導体発光装置
DE19902750A1 (de) * 1999-01-25 2000-08-03 Osram Opto Semiconductors Gmbh Halbleiterbauelement zur Erzeugung von mischfarbiger elektromagnetischer Strahlung
JP4296644B2 (ja) * 1999-01-29 2009-07-15 豊田合成株式会社 発光ダイオード
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
US6351069B1 (en) 1999-02-18 2002-02-26 Lumileds Lighting, U.S., Llc Red-deficiency-compensating phosphor LED
US6680569B2 (en) 1999-02-18 2004-01-20 Lumileds Lighting U.S. Llc Red-deficiency compensating phosphor light emitting device
US6140669A (en) 1999-02-20 2000-10-31 Ohio University Gallium nitride doped with rare earth ions and method and structure for achieving visible light emission
KR100683877B1 (ko) 1999-03-04 2007-02-15 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 레이저소자
JP3937644B2 (ja) * 1999-03-25 2007-06-27 セイコーエプソン株式会社 光源及び照明装置並びにその照明装置を用いた液晶装置
WO2000079605A1 (en) 1999-06-23 2000-12-28 Citizen Electronics Co., Ltd. Light emitting diode
JP3825318B2 (ja) 1999-07-23 2006-09-27 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 発光物質装置、波長変換注入成形材および光源
JP2003505582A (ja) 1999-07-23 2003-02-12 パテント−トロイハント−ゲゼルシヤフト フユール エレクトリツシエ グリユーラムペン ミツト ベシユレンクテル ハフツング 光源用発光物質および発光物質を有する光源
US6515421B2 (en) * 1999-09-02 2003-02-04 General Electric Company Control of leachable mercury in fluorescent lamps
JP2001144331A (ja) 1999-09-02 2001-05-25 Toyoda Gosei Co Ltd 発光装置
US6630691B1 (en) * 1999-09-27 2003-10-07 Lumileds Lighting U.S., Llc Light emitting diode device comprising a luminescent substrate that performs phosphor conversion
US6696703B2 (en) 1999-09-27 2004-02-24 Lumileds Lighting U.S., Llc Thin film phosphor-converted light emitting diode device
KR100683364B1 (ko) 1999-09-27 2007-02-15 필립스 루미리즈 라이팅 캄파니 엘엘씨 완전한 형광 물질 변환에 의해 백색광을 생성하는 발광다이오드 소자
US6686691B1 (en) * 1999-09-27 2004-02-03 Lumileds Lighting, U.S., Llc Tri-color, white light LED lamps
US6299498B1 (en) * 1999-10-27 2001-10-09 Shin Lung Liu White-light emitting diode structure and manufacturing method
JP4197814B2 (ja) * 1999-11-12 2008-12-17 シャープ株式会社 Ｌｅｄ駆動方法およびｌｅｄ装置と表示装置
US20020176259A1 (en) 1999-11-18 2002-11-28 Ducharme Alfred D. Systems and methods for converting illumination
WO2001036864A2 (en) † 1999-11-18 2001-05-25 Color Kinetics Systems and methods for generating and modulating illumination conditions
EP1610593B2 (en) 1999-11-18 2020-02-19 Signify North America Corporation Generation of white light with Light Emitting Diodes having different spectrum
TW500962B (en) * 1999-11-26 2002-09-01 Sanyo Electric Co Surface light source and method for adjusting its hue
US6357889B1 (en) 1999-12-01 2002-03-19 General Electric Company Color tunable light source
US6513949B1 (en) * 1999-12-02 2003-02-04 Koninklijke Philips Electronics N.V. LED/phosphor-LED hybrid lighting systems
US6350041B1 (en) * 1999-12-03 2002-02-26 Cree Lighting Company High output radial dispersing lamp using a solid state light source
US6666567B1 (en) 1999-12-28 2003-12-23 Honeywell International Inc. Methods and apparatus for a light source with a raised LED structure
JP2001177145A (ja) * 1999-12-21 2001-06-29 Toshiba Electronic Engineering Corp 半導体発光素子およびその製造方法
US7576496B2 (en) * 1999-12-22 2009-08-18 General Electric Company AC powered OLED device
US6566808B1 (en) 1999-12-22 2003-05-20 General Electric Company Luminescent display and method of making
TW480879B (en) * 2000-01-06 2002-03-21 Dynascan Technology Corp Method to compensate for the color no uniformity of color display
KR20010080796A (ko) * 2000-01-07 2001-08-25 허영덕 백색광용 형광체 및 그 제조방법, 그리고 이를 이용한백색광 발생방법
US6700322B1 (en) * 2000-01-27 2004-03-02 General Electric Company Light source with organic layer and photoluminescent layer
US7049761B2 (en) 2000-02-11 2006-05-23 Altair Engineering, Inc. Light tube and power supply circuit
US6522065B1 (en) 2000-03-27 2003-02-18 General Electric Company Single phosphor for creating white light with high luminosity and high CRI in a UV led device
US6538371B1 (en) * 2000-03-27 2003-03-25 The General Electric Company White light illumination system with improved color output
US6409938B1 (en) 2000-03-27 2002-06-25 The General Electric Company Aluminum fluoride flux synthesis method for producing cerium doped YAG
WO2001075359A1 (en) * 2000-04-03 2001-10-11 Getinge/Castle, Inc. High power led source and optical delivery system
US6653765B1 (en) 2000-04-17 2003-11-25 General Electric Company Uniform angular light distribution from LEDs
US6603258B1 (en) * 2000-04-24 2003-08-05 Lumileds Lighting, U.S. Llc Light emitting diode device that emits white light
DE10020465A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement
JP4521929B2 (ja) * 2000-04-26 2010-08-11 株式会社日立メディコ 蛍光体及びそれを用いた放射線検出器及びｘ線ｃｔ装置
US7304325B2 (en) * 2000-05-01 2007-12-04 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor light-emitting device
US6604971B1 (en) 2000-05-02 2003-08-12 General Electric Company Fabrication of LED lamps by controlled deposition of a suspension media
US6501100B1 (en) 2000-05-15 2002-12-31 General Electric Company White light emitting phosphor blend for LED devices
US6466135B1 (en) 2000-05-15 2002-10-15 General Electric Company Phosphors for down converting ultraviolet light of LEDs to blue-green light
US6621211B1 (en) 2000-05-15 2003-09-16 General Electric Company White light emitting phosphor blends for LED devices
US6555958B1 (en) 2000-05-15 2003-04-29 General Electric Company Phosphor for down converting ultraviolet light of LEDs to blue-green light
JP2001332765A (ja) * 2000-05-22 2001-11-30 Iwasaki Electric Co Ltd Ｌｅｄ表示灯
JP4695819B2 (ja) 2000-05-29 2011-06-08 パテント−トロイハント−ゲゼルシヤフト フユール エレクトリツシエ グリユーラムペン ミツト ベシユレンクテル ハフツング Ｌｅｄをベースとする白色発光照明ユニット
DE10026435A1 (de) * 2000-05-29 2002-04-18 Osram Opto Semiconductors Gmbh Kalzium-Magnesium-Chlorosilikat-Leuchtstoff und seine Anwendung bei Lumineszenz-Konversions-LED
JP2002057376A (ja) * 2000-05-31 2002-02-22 Matsushita Electric Ind Co Ltd Ｌｅｄランプ
US6577073B2 (en) 2000-05-31 2003-06-10 Matsushita Electric Industrial Co., Ltd. Led lamp
JP4386693B2 (ja) * 2000-05-31 2009-12-16 パナソニック株式会社 Ｌｅｄランプおよびランプユニット
US7320632B2 (en) * 2000-06-15 2008-01-22 Lednium Pty Limited Method of producing a lamp
AUPQ818100A0 (en) * 2000-06-15 2000-07-06 Arlec Australia Limited Led lamp
JP2002190622A (ja) * 2000-12-22 2002-07-05 Sanken Electric Co Ltd 発光ダイオード用透光性蛍光カバー
JP4926337B2 (ja) * 2000-06-28 2012-05-09 アバゴ・テクノロジーズ・ジェネラル・アイピー（シンガポール）プライベート・リミテッド 光源
US6883926B2 (en) 2000-07-25 2005-04-26 General Electric Company Light emitting semi-conductor device apparatus for display illumination
DE10036940A1 (de) * 2000-07-28 2002-02-07 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Lumineszenz-Konversions-LED
JP2002050797A (ja) 2000-07-31 2002-02-15 Toshiba Corp 半導体励起蛍光体発光装置およびその製造方法
US6747406B1 (en) * 2000-08-07 2004-06-08 General Electric Company LED cross-linkable phospor coating
DE10041328B4 (de) * 2000-08-23 2018-04-05 Osram Opto Semiconductors Gmbh Verpackungseinheit für Halbleiterchips
JP2002076434A (ja) * 2000-08-28 2002-03-15 Toyoda Gosei Co Ltd 発光装置
KR100406856B1 (ko) * 2000-08-30 2003-11-21 가부시키가이샤 시티즌 덴시 표면 실장형 발광 다이오드 및 그 제조방법
US6614103B1 (en) 2000-09-01 2003-09-02 General Electric Company Plastic packaging of LED arrays
JP2002084002A (ja) * 2000-09-06 2002-03-22 Nippon Leiz Co Ltd 光源装置
US6255129B1 (en) * 2000-09-07 2001-07-03 Highlink Technology Corporation Light-emitting diode device and method of manufacturing the same
US6525464B1 (en) * 2000-09-08 2003-02-25 Unity Opto Technology Co., Ltd. Stacked light-mixing LED
JP2002141556A (ja) 2000-09-12 2002-05-17 Lumileds Lighting Us Llc 改良された光抽出効果を有する発光ダイオード
US6635987B1 (en) * 2000-09-26 2003-10-21 General Electric Company High power white LED lamp structure using unique phosphor application for LED lighting products
US7378982B2 (en) * 2000-09-28 2008-05-27 Abdulahi Mohamed Electronic display with multiple pre-programmed messages
JP3609709B2 (ja) * 2000-09-29 2005-01-12 株式会社シチズン電子 発光ダイオード
JP2002111072A (ja) * 2000-09-29 2002-04-12 Toyoda Gosei Co Ltd 発光装置
US6998281B2 (en) * 2000-10-12 2006-02-14 General Electric Company Solid state lighting device with reduced form factor including LED with directional emission and package with microoptics
US6650044B1 (en) 2000-10-13 2003-11-18 Lumileds Lighting U.S., Llc Stenciling phosphor layers on light emitting diodes
JP2002133925A (ja) * 2000-10-25 2002-05-10 Sanken Electric Co Ltd 蛍光カバー及び半導体発光装置
US6476549B2 (en) * 2000-10-26 2002-11-05 Mu-Chin Yu Light emitting diode with improved heat dissipation
JP2002141559A (ja) * 2000-10-31 2002-05-17 Sanken Electric Co Ltd 発光半導体チップ組立体及び発光半導体リードフレーム
FI109632B (fi) 2000-11-06 2002-09-13 Nokia Corp Valkoinen valaisu
US6365922B1 (en) * 2000-11-16 2002-04-02 Harvatek Corp. Focusing cup for surface mount optoelectronic diode package
US6518600B1 (en) 2000-11-17 2003-02-11 General Electric Company Dual encapsulation for an LED
JP4683719B2 (ja) * 2000-12-21 2011-05-18 株式会社日立メディコ 酸化物蛍光体及びそれを用いた放射線検出器、並びにｘ線ｃｔ装置
AT410266B (de) * 2000-12-28 2003-03-25 Tridonic Optoelectronics Gmbh Lichtquelle mit einem lichtemittierenden element
KR100367854B1 (ko) * 2000-12-28 2003-01-10 대주정밀화학 주식회사 툴리움을 포함하는 백색 발광다이오드용 알루미늄산이트륨황색 형광체 및 그 제조방법
US20020084745A1 (en) * 2000-12-29 2002-07-04 Airma Optoelectronics Corporation Light emitting diode with light conversion by dielectric phosphor powder
JP3819713B2 (ja) * 2001-01-09 2006-09-13 日本碍子株式会社 半導体発光素子
JP2002280607A (ja) * 2001-01-10 2002-09-27 Toyoda Gosei Co Ltd 発光装置
JP2002217459A (ja) * 2001-01-16 2002-08-02 Stanley Electric Co Ltd 発光ダイオード及び該発光ダイオードを光源として用いた液晶表示器のバックライト装置
US6930737B2 (en) * 2001-01-16 2005-08-16 Visteon Global Technologies, Inc. LED backlighting system
US6703780B2 (en) * 2001-01-16 2004-03-09 General Electric Company Organic electroluminescent device with a ceramic output coupler and method of making the same
MY145695A (en) 2001-01-24 2012-03-30 Nichia Corp Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same
EP1244152A3 (en) * 2001-01-26 2008-12-03 Toyoda Gosei Co., Ltd. Reflective light emitting diode, reflective optical device and its manufacturing method
JP2002232013A (ja) * 2001-02-02 2002-08-16 Rohm Co Ltd 半導体発光素子
DE10105800B4 (de) * 2001-02-07 2017-08-31 Osram Gmbh Hocheffizienter Leuchtstoff und dessen Verwendung
JP4724924B2 (ja) * 2001-02-08 2011-07-13 ソニー株式会社 表示装置の製造方法
US6541800B2 (en) 2001-02-22 2003-04-01 Weldon Technologies, Inc. High power LED
JP4116260B2 (ja) 2001-02-23 2008-07-09 株式会社東芝 半導体発光装置
US6611000B2 (en) 2001-03-14 2003-08-26 Matsushita Electric Industrial Co., Ltd. Lighting device
JP2002270899A (ja) * 2001-03-14 2002-09-20 Mitsubishi Electric Lighting Corp 色温度可変ｌｅｄ光源モジュール
US6630786B2 (en) * 2001-03-30 2003-10-07 Candescent Technologies Corporation Light-emitting device having light-reflective layer formed with, or/and adjacent to, material that enhances device performance
US6844903B2 (en) * 2001-04-04 2005-01-18 Lumileds Lighting U.S., Llc Blue backlight and phosphor layer for a color LCD
JP2002314143A (ja) * 2001-04-09 2002-10-25 Toshiba Corp 発光装置
JP4101468B2 (ja) * 2001-04-09 2008-06-18 豊田合成株式会社 発光装置の製造方法
JP2002314138A (ja) 2001-04-09 2002-10-25 Toshiba Corp 発光装置
JP2004526290A (ja) * 2001-04-10 2004-08-26 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 照明系およびディスプレイデバイス
JP2002309247A (ja) * 2001-04-16 2002-10-23 Nichia Chem Ind Ltd 窒化ガリウム蛍光体及びその製造方法
WO2002086978A1 (fr) * 2001-04-20 2002-10-31 Nichia Corporation Dispositif photoemetteur
US6685852B2 (en) 2001-04-27 2004-02-03 General Electric Company Phosphor blends for generating white light from near-UV/blue light-emitting devices
US6686676B2 (en) 2001-04-30 2004-02-03 General Electric Company UV reflectors and UV-based light sources having reduced UV radiation leakage incorporating the same
US6658373B2 (en) * 2001-05-11 2003-12-02 Field Diagnostic Services, Inc. Apparatus and method for detecting faults and providing diagnostics in vapor compression cycle equipment
US6616862B2 (en) * 2001-05-21 2003-09-09 General Electric Company Yellow light-emitting halophosphate phosphors and light sources incorporating the same
KR100419611B1 (ko) 2001-05-24 2004-02-25 삼성전기주식회사 발광다이오드 및 이를 이용한 발광장치와 그 제조방법
US6596195B2 (en) 2001-06-01 2003-07-22 General Electric Company Broad-spectrum terbium-containing garnet phosphors and white-light sources incorporating the same
US7012588B2 (en) * 2001-06-05 2006-03-14 Eastman Kodak Company Method for saving power in an organic electroluminescent display using white light emitting elements
US6642652B2 (en) * 2001-06-11 2003-11-04 Lumileds Lighting U.S., Llc Phosphor-converted light emitting device
JP4114331B2 (ja) * 2001-06-15 2008-07-09 豊田合成株式会社 発光装置
US6798136B2 (en) * 2001-06-19 2004-09-28 Gelcore Llc Phosphor embedded die epoxy and lead frame modifications
US6758587B2 (en) 2001-06-25 2004-07-06 Grote Industries, Inc. Light emitting diode license lamp with reflector
TWI287569B (en) * 2001-06-27 2007-10-01 Nantex Industry Co Ltd Yttrium aluminium garnet fluorescent powder comprising at least two optical active center, its preparation and uses
DE10133352A1 (de) * 2001-07-16 2003-02-06 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Beleuchtungseinheit mit mindestens einer LED als Lichtquelle
JP2003027057A (ja) * 2001-07-17 2003-01-29 Hitachi Ltd 光源およびそれを用いた画像表示装置
JP2003031856A (ja) * 2001-07-18 2003-01-31 Okaya Electric Ind Co Ltd 発光素子及びその製造方法
US20030015708A1 (en) 2001-07-23 2003-01-23 Primit Parikh Gallium nitride based diodes with low forward voltage and low reverse current operation
TW552726B (en) 2001-07-26 2003-09-11 Matsushita Electric Works Ltd Light emitting device in use of LED
KR100923804B1 (ko) 2001-09-03 2009-10-27 파나소닉 주식회사 반도체발광소자, 발광장치 및 반도체발광소자의 제조방법
US6791283B2 (en) * 2001-09-07 2004-09-14 Opalec Dual mode regulated light-emitting diode module for flashlights
DE10146719A1 (de) * 2001-09-20 2003-04-17 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Beleuchtungseinheit mit mindestens einer LED als Lichtquelle
DE10147040A1 (de) * 2001-09-25 2003-04-24 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Beleuchtungseinheit mit mindestens einer LED als Lichtquelle
DE20115914U1 (de) * 2001-09-27 2003-02-13 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Beleuchtungseinheit mit mindestens einer LED als Lichtquelle
CN100386888C (zh) * 2001-10-01 2008-05-07 松下电器产业株式会社 发光元件及使用它的发光装置
KR100624403B1 (ko) * 2001-10-06 2006-09-15 삼성전자주식회사 인체의 신경계 기반 정서 합성 장치 및 방법
JP2003124521A (ja) * 2001-10-09 2003-04-25 Rohm Co Ltd ケース付半導体発光装置
JP3948650B2 (ja) * 2001-10-09 2007-07-25 アバゴ・テクノロジーズ・イーシービーユー・アイピー（シンガポール）プライベート・リミテッド 発光ダイオード及びその製造方法
US7011421B2 (en) * 2001-10-18 2006-03-14 Ilight Technologies, Inc. Illumination device for simulating neon lighting through use of fluorescent dyes
DE10153259A1 (de) * 2001-10-31 2003-05-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP2003147351A (ja) * 2001-11-09 2003-05-21 Taiwan Lite On Electronics Inc 白色光光源の製作方法
DE10241989A1 (de) * 2001-11-30 2003-06-18 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US20030117794A1 (en) * 2001-12-20 2003-06-26 Tien-Rong Lu Flat color-shift medium
TW518773B (en) * 2001-12-31 2003-01-21 Solidlite Corp Manufacturing method of white LED
KR100497339B1 (ko) * 2002-01-08 2005-06-23 주식회사 이츠웰 발광 다이오드 장치 및 이를 이용한 조명 기구, 표시 장치그리고 백라이트 장치
KR20030060281A (ko) * 2002-01-08 2003-07-16 주식회사 이츠웰 발광 다이오드 장치 및 이를 이용한 디스플레이
WO2003062775A1 (en) * 2002-01-17 2003-07-31 Hutchinson Technology Inc. Spectroscopy light source
JP3973082B2 (ja) * 2002-01-31 2007-09-05 シチズン電子株式会社 両面発光ｌｅｄパッケージ
JP2003243700A (ja) * 2002-02-12 2003-08-29 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
CN101420004B (zh) * 2002-02-15 2012-07-04 三菱化学株式会社 光发射器件及使用其的照明器
US6881983B2 (en) * 2002-02-25 2005-04-19 Kopin Corporation Efficient light emitting diodes and lasers
JP4113017B2 (ja) * 2002-03-27 2008-07-02 シチズンホールディングス株式会社 光源装置および表示装置
TW558065U (en) * 2002-03-28 2003-10-11 Solidlite Corp Purplish pink light emitting diode
US6762432B2 (en) * 2002-04-01 2004-07-13 Micrel, Inc. Electrical field alignment vernier
JP4172196B2 (ja) * 2002-04-05 2008-10-29 豊田合成株式会社 発光ダイオード
US6911079B2 (en) * 2002-04-19 2005-06-28 Kopin Corporation Method for reducing the resistivity of p-type II-VI and III-V semiconductors
JP3956972B2 (ja) * 2002-04-25 2007-08-08 日亜化学工業株式会社 蛍光物質を用いた発光装置
CA2427559A1 (en) * 2002-05-15 2003-11-15 Sumitomo Electric Industries, Ltd. White color light emitting device
US8232725B1 (en) * 2002-05-21 2012-07-31 Imaging Systems Technology Plasma-tube gas discharge device
KR100449503B1 (ko) * 2002-05-29 2004-09-22 서울반도체 주식회사 백색 칩 발광 다이오드 및 그 제조 방법
KR100449502B1 (ko) * 2002-05-29 2004-09-22 서울반도체 주식회사 백색 발광 다이오드 및 그 제작 방법
KR100632659B1 (ko) * 2002-05-31 2006-10-11 서울반도체 주식회사 백색 발광 다이오드
KR20050004298A (ko) * 2002-06-11 2005-01-12 아끼덴끼 가부시끼가이샤 자전거의 전조등 및 전조등 전기 회로
US20030230977A1 (en) * 2002-06-12 2003-12-18 Epstein Howard C. Semiconductor light emitting device with fluoropolymer lens
CA2489237A1 (en) * 2002-06-13 2003-12-24 Cree, Inc. Semiconductor emitter comprising a saturated phosphor
US6972516B2 (en) * 2002-06-14 2005-12-06 University Of Cincinnati Photopump-enhanced electroluminescent devices
KR20080064904A (ko) * 2002-06-14 2008-07-09 레드니엄 테크놀로지 피티와이 리미티드 Ｌｅｄ 패키징 방법 및 패키징된 ｌｅｄ
US6734091B2 (en) 2002-06-28 2004-05-11 Kopin Corporation Electrode for p-type gallium nitride-based semiconductors
US7002180B2 (en) 2002-06-28 2006-02-21 Kopin Corporation Bonding pad for gallium nitride-based light-emitting device
WO2003107442A2 (en) 2002-06-17 2003-12-24 Kopin Corporation Electrode for p-type gallium nitride-based semiconductors
US6841802B2 (en) 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
TW558775B (en) * 2002-06-27 2003-10-21 Solidlite Corp Package of compound type LED
US6955985B2 (en) 2002-06-28 2005-10-18 Kopin Corporation Domain epitaxy for thin film growth
US6809471B2 (en) 2002-06-28 2004-10-26 General Electric Company Phosphors containing oxides of alkaline-earth and Group-IIIB metals and light sources incorporating the same
EP1535299B1 (en) * 2002-07-16 2009-11-18 odelo GmbH White led headlight
JP4118742B2 (ja) * 2002-07-17 2008-07-16 シャープ株式会社 発光ダイオードランプおよび発光ダイオード表示装置
WO2004010472A2 (en) * 2002-07-19 2004-01-29 Microsemi Corporation Process for fabricating, and light emitting device resulting from, a homogenously mixed powder/pelletized compound
JP3923867B2 (ja) * 2002-07-26 2007-06-06 株式会社アドバンスト・ディスプレイ 面状光源装置及びそれを用いた液晶表示装置
EP2290715B1 (en) * 2002-08-01 2019-01-23 Nichia Corporation Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
JP2004071807A (ja) * 2002-08-06 2004-03-04 Sharp Corp 照明装置、カメラ装置及び携帯機器
US20040032728A1 (en) * 2002-08-19 2004-02-19 Robert Galli Optical assembly for LED chip package
AU2002368183A1 (en) * 2002-08-21 2004-03-11 Seoul Semiconductor Co., Ltd. White light emitting device
US10340424B2 (en) 2002-08-30 2019-07-02 GE Lighting Solutions, LLC Light emitting diode component
KR100499129B1 (ko) 2002-09-02 2005-07-04 삼성전기주식회사 발광 다이오드 및 그 제조방법
US7264378B2 (en) * 2002-09-04 2007-09-04 Cree, Inc. Power surface mount light emitting die package
US7775685B2 (en) 2003-05-27 2010-08-17 Cree, Inc. Power surface mount light emitting die package
US7244965B2 (en) 2002-09-04 2007-07-17 Cree Inc, Power surface mount light emitting die package
CN1318540C (zh) * 2002-09-13 2007-05-30 北京有色金属研究总院<Del/> 一种蓝光激发的白色led用荧光粉及其制造方法
WO2004027884A1 (en) 2002-09-19 2004-04-01 Cree, Inc. Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor
US7460196B2 (en) * 2002-09-25 2008-12-02 Lg Displays Co., Ltd. Backlight device for liquid crystal display and method of fabricating the same
JP4263453B2 (ja) * 2002-09-25 2009-05-13 パナソニック株式会社 無機酸化物及びこれを用いた発光装置
US6815241B2 (en) * 2002-09-25 2004-11-09 Cao Group, Inc. GaN structures having low dislocation density and methods of manufacture
JP4201167B2 (ja) * 2002-09-26 2008-12-24 シチズン電子株式会社 白色発光装置の製造方法
CN1233046C (zh) * 2002-09-29 2005-12-21 光宝科技股份有限公司 一种制作白光发光二极管光源的方法
JP2004127988A (ja) * 2002-09-30 2004-04-22 Toyoda Gosei Co Ltd 白色発光装置
JP2004131567A (ja) * 2002-10-09 2004-04-30 Hamamatsu Photonics Kk 発光体と、これを用いた電子線検出器、走査型電子顕微鏡及び質量分析装置
US7009199B2 (en) * 2002-10-22 2006-03-07 Cree, Inc. Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current
US7554258B2 (en) 2002-10-22 2009-06-30 Osram Opto Semiconductors Gmbh Light source having an LED and a luminescence conversion body and method for producing the luminescence conversion body
RU2219622C1 (ru) 2002-10-25 2003-12-20 Закрытое акционерное общество "Светлана-Оптоэлектроника" Полупроводниковый источник белого света
TW586246B (en) * 2002-10-28 2004-05-01 Super Nova Optoelectronics Cor Manufacturing method of white light LED and the light-emitting device thereof
JP4040955B2 (ja) * 2002-11-06 2008-01-30 株式会社小糸製作所 車両用前照灯及びその製造方法
JP5138145B2 (ja) * 2002-11-12 2013-02-06 日亜化学工業株式会社 蛍光体積層構造及びそれを用いる光源
KR20040044701A (ko) * 2002-11-21 2004-05-31 삼성전기주식회사 발광소자 패키지 및 그 제조방법
US7595113B2 (en) * 2002-11-29 2009-09-29 Shin-Etsu Chemical Co., Ltd. LED devices and silicone resin composition therefor
JP2004186168A (ja) * 2002-11-29 2004-07-02 Shin Etsu Chem Co Ltd 発光ダイオード素子用シリコーン樹脂組成物
JP4072632B2 (ja) * 2002-11-29 2008-04-09 豊田合成株式会社 発光装置及び発光方法
TW559627B (en) * 2002-12-03 2003-11-01 Lite On Technology Corp Method for producing bright white light diode with fluorescent powder
US6897486B2 (en) * 2002-12-06 2005-05-24 Ban P. Loh LED package die having a small footprint
US7692206B2 (en) * 2002-12-06 2010-04-06 Cree, Inc. Composite leadframe LED package and method of making the same
US6744196B1 (en) * 2002-12-11 2004-06-01 Oriol, Inc. Thin film LED
US6975369B1 (en) * 2002-12-12 2005-12-13 Gelcore, Llc Liquid crystal display with color backlighting employing light emitting diodes
AU2003283731A1 (en) * 2002-12-13 2004-07-09 Koninklijke Philips Electronics N.V. Illumination system comprising a radiation source and a fluorescent material
DE10259945A1 (de) * 2002-12-20 2004-07-01 Tews, Walter, Dipl.-Chem. Dr.rer.nat.habil. Leuchtstoffe mit verlängerter Fluoreszenzlebensdauer
TW591811B (en) * 2003-01-02 2004-06-11 Epitech Technology Corp Ltd Color mixing light emitting diode
TWI351548B (en) * 2003-01-15 2011-11-01 Semiconductor Energy Lab Manufacturing method of liquid crystal display dev
KR100639647B1 (ko) * 2003-01-20 2006-11-01 우베 고산 가부시키가이샤 광 변환용 세라믹스 복합 재료 및 그 용도
DE102004003135A1 (de) * 2003-02-20 2004-09-02 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Beschichteter Leuchtstoff und lichtemittierende Vorrichtung mit derartigem Leuchtstoff
DE10307282A1 (de) * 2003-02-20 2004-09-02 Osram Opto Semiconductors Gmbh Beschichteter Leuchtstoff, lichtemittierende Vorrichtung mit derartigem Leuchtstoff und Verfahren zu seiner Herstellung
KR20050113200A (ko) * 2003-02-26 2005-12-01 크리, 인코포레이티드 복합 백색 광원 및 그 제조 방법
TWI289937B (en) * 2003-03-04 2007-11-11 Topco Scient Co Ltd White light LED
US20040173807A1 (en) * 2003-03-04 2004-09-09 Yongchi Tian Garnet phosphors, method of making the same, and application to semiconductor LED chips for manufacturing lighting devices
TWI246780B (en) * 2003-03-10 2006-01-01 Toyoda Gosei Kk Solid-state component device and manufacturing method thereof
TW200507226A (en) * 2003-03-12 2005-02-16 Lednium Pty Ltd A lamp and a process for producing a lamp
CN100509994C (zh) * 2003-03-13 2009-07-08 日亚化学工业株式会社 发光膜、发光装置、发光膜的制造方法以及发光装置的制造方法
WO2004081140A1 (ja) * 2003-03-13 2004-09-23 Nichia Corporation 発光膜、発光装置、発光膜の製造方法および発光装置の製造方法
US7038370B2 (en) * 2003-03-17 2006-05-02 Lumileds Lighting, U.S., Llc Phosphor converted light emitting device
US7276025B2 (en) * 2003-03-20 2007-10-02 Welch Allyn, Inc. Electrical adapter for medical diagnostic instruments using LEDs as illumination sources
KR20050118210A (ko) * 2003-03-28 2005-12-15 오스람 옵토 세미컨덕터스 게엠베하 입자 또는 물질의 표면 상에 코팅을 형성시키는 방법 및이에 의한 생성물
US20040196318A1 (en) * 2003-04-01 2004-10-07 Su Massharudin Bin Method of depositing phosphor on light emitting diode
US20040252488A1 (en) * 2003-04-01 2004-12-16 Innovalight Light-emitting ceiling tile
US7279832B2 (en) * 2003-04-01 2007-10-09 Innovalight, Inc. Phosphor materials and illumination devices made therefrom
US7278766B2 (en) * 2003-04-04 2007-10-09 Honeywell International Inc. LED based light guide for dual mode aircraft formation lighting
JP2004311822A (ja) * 2003-04-09 2004-11-04 Solidlite Corp 赤紫色発光ダイオード
DE10316769A1 (de) * 2003-04-10 2004-10-28 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Leuchtstoffbassierte LED und zugehöriger Leuchtstoff
US6903380B2 (en) * 2003-04-11 2005-06-07 Weldon Technologies, Inc. High power light emitting diode
US20040207311A1 (en) * 2003-04-18 2004-10-21 Jung-Pin Cheng White light emitting device
KR20040090667A (ko) * 2003-04-18 2004-10-26 삼성전기주식회사 디스플레이용 라이트 유닛
US7368179B2 (en) * 2003-04-21 2008-05-06 Sarnoff Corporation Methods and devices using high efficiency alkaline earth metal thiogallate-based phosphors
US7125501B2 (en) * 2003-04-21 2006-10-24 Sarnoff Corporation High efficiency alkaline earth metal thiogallate-based phosphors
KR20040092512A (ko) * 2003-04-24 2004-11-04 (주)그래픽테크노재팬 방열 기능을 갖는 반사판이 구비된 반도체 발광장치
EP2270887B1 (en) 2003-04-30 2020-01-22 Cree, Inc. High powered light emitter packages with compact optics
KR100691143B1 (ko) * 2003-04-30 2007-03-09 삼성전기주식회사 다층 형광층을 가진 발광 다이오드 소자
US7005679B2 (en) 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
US7528421B2 (en) 2003-05-05 2009-05-05 Lamina Lighting, Inc. Surface mountable light emitting diode assemblies packaged for high temperature operation
US7777235B2 (en) 2003-05-05 2010-08-17 Lighting Science Group Corporation Light emitting diodes with improved light collimation
US7157745B2 (en) 2004-04-09 2007-01-02 Blonder Greg E Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them
US7633093B2 (en) * 2003-05-05 2009-12-15 Lighting Science Group Corporation Method of making optical light engines with elevated LEDs and resulting product
US7108386B2 (en) 2003-05-12 2006-09-19 Illumitech Inc. High-brightness LED-phosphor coupling
US7176501B2 (en) 2003-05-12 2007-02-13 Luxpia Co, Ltd Tb,B-based yellow phosphor, its preparation method, and white semiconductor light emitting device incorporating the same
US6982045B2 (en) * 2003-05-17 2006-01-03 Phosphortech Corporation Light emitting device having silicate fluorescent phosphor
JP2004352928A (ja) * 2003-05-30 2004-12-16 Mitsubishi Chemicals Corp 発光装置及び照明装置
JP3977774B2 (ja) * 2003-06-03 2007-09-19 ローム株式会社 光半導体装置
US7122841B2 (en) 2003-06-04 2006-10-17 Kopin Corporation Bonding pad for gallium nitride-based light-emitting devices
US7521667B2 (en) 2003-06-23 2009-04-21 Advanced Optical Technologies, Llc Intelligent solid state lighting
US7145125B2 (en) 2003-06-23 2006-12-05 Advanced Optical Technologies, Llc Integrating chamber cone light using LED sources
US7075225B2 (en) * 2003-06-27 2006-07-11 Tajul Arosh Baroky White light emitting device
US7462983B2 (en) * 2003-06-27 2008-12-09 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. White light emitting device
JP2005026688A (ja) * 2003-06-30 2005-01-27 Osram Opto Semiconductors Gmbh 放射放出半導体チップ、該半導体チップの作製方法および該半導体チップの明るさの調整設定方法
US7088038B2 (en) * 2003-07-02 2006-08-08 Gelcore Llc Green phosphor for general illumination applications
US7663597B2 (en) 2003-07-16 2010-02-16 Honeywood Technologies, Llc LCD plateau power conservation
US7583260B2 (en) * 2003-07-16 2009-09-01 Honeywood Technologies, Llc Color preservation for spatially varying power conservation
US7580033B2 (en) * 2003-07-16 2009-08-25 Honeywood Technologies, Llc Spatial-based power savings
US7714831B2 (en) * 2003-07-16 2010-05-11 Honeywood Technologies, Llc Background plateau manipulation for display device power conservation
US7602388B2 (en) * 2003-07-16 2009-10-13 Honeywood Technologies, Llc Edge preservation for spatially varying power conservation
US7786988B2 (en) * 2003-07-16 2010-08-31 Honeywood Technologies, Llc Window information preservation for spatially varying power conservation
US6987353B2 (en) * 2003-08-02 2006-01-17 Phosphortech Corporation Light emitting device having sulfoselenide fluorescent phosphor
US7112921B2 (en) * 2003-08-02 2006-09-26 Phosphortech Inc. Light emitting device having selenium-based fluorescent phosphor
US7109648B2 (en) * 2003-08-02 2006-09-19 Phosphortech Inc. Light emitting device having thio-selenide fluorescent phosphor
KR20050016804A (ko) * 2003-08-04 2005-02-21 서울반도체 주식회사 발광 소자용 고휘도 형광체 구조 및 이를 사용하는 발광소자
US7026755B2 (en) * 2003-08-07 2006-04-11 General Electric Company Deep red phosphor for general illumination applications
CN100379041C (zh) * 2003-08-07 2008-04-02 松下电器产业株式会社 Led照明光源及其制造方法
US20050104072A1 (en) 2003-08-14 2005-05-19 Slater David B.Jr. Localized annealing of metal-silicon carbide ohmic contacts and devices so formed
TWI233697B (en) * 2003-08-28 2005-06-01 Genesis Photonics Inc AlInGaN light-emitting diode with wide spectrum and solid-state white light device
EP1659335A4 (en) * 2003-08-28 2010-05-05 Mitsubishi Chem Corp LIGHT DISPENSER AND PHOSPHORUS
JP2007504644A (ja) * 2003-08-29 2007-03-01 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 色混合照明システム
US7029935B2 (en) * 2003-09-09 2006-04-18 Cree, Inc. Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same
US7183587B2 (en) * 2003-09-09 2007-02-27 Cree, Inc. Solid metal block mounting substrates for semiconductor light emitting devices
US7502392B2 (en) 2003-09-12 2009-03-10 Semiconductor Energy Laboratory Co., Ltd. Laser oscillator
JP3813144B2 (ja) * 2003-09-12 2006-08-23 ローム株式会社 発光制御回路
US7204607B2 (en) * 2003-09-16 2007-04-17 Matsushita Electric Industrial Co., Ltd. LED lamp
TW200512949A (en) * 2003-09-17 2005-04-01 Nanya Plastics Corp A method to provide emission of white color light by the principle of secondary excitation and its product
US7915085B2 (en) 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
JP2005089671A (ja) * 2003-09-19 2005-04-07 Shin Etsu Chem Co Ltd 硬化性シリコーン樹脂組成物
JP4378242B2 (ja) * 2003-09-25 2009-12-02 株式会社小糸製作所 車両用灯具
KR100808705B1 (ko) * 2003-09-30 2008-02-29 가부시끼가이샤 도시바 발광장치
US7135129B2 (en) 2003-10-22 2006-11-14 Yano Tech (Shanghai) Limited Inorganic fluorescent material used for solid-state light source
US7252787B2 (en) * 2003-10-29 2007-08-07 General Electric Company Garnet phosphor materials having enhanced spectral characteristics
US7442326B2 (en) 2003-10-29 2008-10-28 Lumination Llc Red garnet phosphors for use in LEDs
US7094362B2 (en) * 2003-10-29 2006-08-22 General Electric Company Garnet phosphor materials having enhanced spectral characteristics
KR100558446B1 (ko) * 2003-11-19 2006-03-10 삼성전기주식회사 파장변환용 몰딩 화합물 수지 태블릿 제조방법과 이를이용한 백색 발광다이오드 제조방법
JP3837588B2 (ja) 2003-11-26 2006-10-25 独立行政法人物質・材料研究機構 蛍光体と蛍光体を用いた発光器具
JP4654670B2 (ja) * 2003-12-16 2011-03-23 日亜化学工業株式会社 発光装置及びその製造方法
US7066623B2 (en) * 2003-12-19 2006-06-27 Soo Ghee Lee Method and apparatus for producing untainted white light using off-white light emitting diodes
TWI229462B (en) * 2003-12-22 2005-03-11 Solidlite Corp Improved method of white light LED
DE10360546A1 (de) * 2003-12-22 2005-07-14 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Leuchtstoff und Lichtquelle mit derartigem Leuchtstoff
KR100610249B1 (ko) * 2003-12-23 2006-08-09 럭스피아 주식회사 황색 발광 형광체 및 그것을 채용한 백색 반도체 발광장치
JP4231418B2 (ja) * 2004-01-07 2009-02-25 株式会社小糸製作所 発光モジュール及び車両用灯具
CN100470855C (zh) * 2004-01-07 2009-03-18 松下电器产业株式会社 Led照明光源
US7183588B2 (en) * 2004-01-08 2007-02-27 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Light emission device
JP2005209794A (ja) * 2004-01-21 2005-08-04 Koito Mfg Co Ltd 発光モジュール及び灯具
WO2005073621A1 (ja) * 2004-01-29 2005-08-11 Matsushita Electric Industrial Co., Ltd. Ｌｅｄ照明光源
TWI250664B (en) * 2004-01-30 2006-03-01 South Epitaxy Corp White light LED
US20050179046A1 (en) * 2004-02-13 2005-08-18 Kopin Corporation P-type electrodes in gallium nitride-based light-emitting devices
US20050179042A1 (en) * 2004-02-13 2005-08-18 Kopin Corporation Monolithic integration and enhanced light extraction in gallium nitride-based light-emitting devices
CN100530707C (zh) * 2004-02-20 2009-08-19 皇家飞利浦电子股份有限公司 包含辐射源和荧光材料的照明系统
US7250715B2 (en) * 2004-02-23 2007-07-31 Philips Lumileds Lighting Company, Llc Wavelength converted semiconductor light emitting devices
EP1566426B1 (en) 2004-02-23 2015-12-02 Philips Lumileds Lighting Company LLC Phosphor converted light emitting device
US10575376B2 (en) 2004-02-25 2020-02-25 Lynk Labs, Inc. AC light emitting diode and AC LED drive methods and apparatus
US10499465B2 (en) 2004-02-25 2019-12-03 Lynk Labs, Inc. High frequency multi-voltage and multi-brightness LED lighting devices and systems and methods of using same
WO2011143510A1 (en) 2010-05-12 2011-11-17 Lynk Labs, Inc. Led lighting system
CN100391020C (zh) * 2004-02-26 2008-05-28 松下电器产业株式会社 Led光源
TWI262609B (en) * 2004-02-27 2006-09-21 Dowa Mining Co Phosphor and manufacturing method thereof, and light source, LED using said phosphor
DE102004029412A1 (de) * 2004-02-27 2005-10-13 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines solchen Halbleiterchips
TWI229465B (en) 2004-03-02 2005-03-11 Genesis Photonics Inc Single chip white light component
US7592192B2 (en) 2004-03-05 2009-09-22 Konica Minolta Holdings, Inc. White light emitting diode (white LED) and method of manufacturing white LED
US7573072B2 (en) * 2004-03-10 2009-08-11 Lumination Llc Phosphor and blends thereof for use in LEDs
DE102004012028A1 (de) * 2004-03-11 2005-10-06 Lite-On Technology Co. Phosphoreszierendes Material, sowie dieses verwendende, weißes Licht emittierende Vorrichtung
AU2005225984A1 (en) * 2004-03-12 2005-10-06 Avery Dennison Corporation Emergency information sign
CN100410703C (zh) * 2004-03-12 2008-08-13 艾利丹尼森公司 具有被动磷光光源的照明系统
US20050201078A1 (en) * 2004-03-12 2005-09-15 Hannington Michael E. Lighting system with a passive phosphorescent light source
DE602005023713D1 (de) * 2004-03-12 2010-11-04 Avery Dennison Corp Notinformations-beleuchtungssystem
US6924233B1 (en) * 2004-03-19 2005-08-02 Agilent Technologies, Inc. Phosphor deposition methods
US20050205874A1 (en) * 2004-03-19 2005-09-22 Ru-Shi Liu Phosphor material and white light-emitting device using the same
JP2005272697A (ja) * 2004-03-25 2005-10-06 Shin Etsu Chem Co Ltd 硬化性シリコーン樹脂組成物、光半導体用封止材および光半導体装置
US20070194693A1 (en) * 2004-03-26 2007-08-23 Hajime Saito Light-Emitting Device
JP2005310756A (ja) * 2004-03-26 2005-11-04 Koito Mfg Co Ltd 光源モジュールおよび車両用前照灯
US7355284B2 (en) 2004-03-29 2008-04-08 Cree, Inc. Semiconductor light emitting devices including flexible film having therein an optical element
DE102004015570A1 (de) * 2004-03-30 2005-11-10 J.S. Technology Co., Ltd. Weiß-Licht-LED-Anordnung
WO2005097938A1 (ja) * 2004-03-31 2005-10-20 Nippon Electric Glass Co., Ltd. 蛍光体及び発光ダイオード
US7514867B2 (en) 2004-04-19 2009-04-07 Panasonic Corporation LED lamp provided with optical diffusion layer having increased thickness and method of manufacturing thereof
US7462086B2 (en) * 2004-04-21 2008-12-09 Philips Lumileds Lighting Company, Llc Phosphor for phosphor-converted semiconductor light emitting device
KR100900372B1 (ko) * 2004-04-27 2009-06-02 파나소닉 주식회사 형광체 조성물과 그 제조 방법, 및 그 형광체 조성물을이용한 발광 장치
CN100401516C (zh) * 2004-04-28 2008-07-09 宏齐科技股份有限公司 白光发光二极管组件的制作方法
TWI228841B (en) * 2004-04-29 2005-03-01 Lite On Technology Corp Luminescence method and apparatus for color temperature adjustable white light
US7819549B2 (en) 2004-05-05 2010-10-26 Rensselaer Polytechnic Institute High efficiency light source using solid-state emitter and down-conversion material
US7837348B2 (en) 2004-05-05 2010-11-23 Rensselaer Polytechnic Institute Lighting system using multiple colored light emitting sources and diffuser element
KR100655894B1 (ko) * 2004-05-06 2006-12-08 서울옵토디바이스주식회사 색온도 및 연색성이 우수한 파장변환 발광장치
US7315119B2 (en) * 2004-05-07 2008-01-01 Avago Technologies Ip (Singapore) Pte Ltd Light-emitting device having a phosphor particle layer with specific thickness
US11158768B2 (en) 2004-05-07 2021-10-26 Bruce H. Baretz Vacuum light emitting diode
KR100658700B1 (ko) 2004-05-13 2006-12-15 서울옵토디바이스주식회사 Ｒｇｂ 발광소자와 형광체를 조합한 발광장치
US7077978B2 (en) * 2004-05-14 2006-07-18 General Electric Company Phosphors containing oxides of alkaline-earth and group-IIIB metals and white-light sources incorporating same
TWI241034B (en) * 2004-05-20 2005-10-01 Lighthouse Technology Co Ltd Light emitting diode package
US7339332B2 (en) * 2004-05-24 2008-03-04 Honeywell International, Inc. Chroma compensated backlit display
CN101163775B (zh) * 2004-05-27 2011-12-28 皇家飞利浦电子股份有限公司 包括一个辐射源和一种荧光材料的照明系统
US7456499B2 (en) * 2004-06-04 2008-11-25 Cree, Inc. Power light emitting die package with reflecting lens and the method of making the same
US7280288B2 (en) * 2004-06-04 2007-10-09 Cree, Inc. Composite optical lens with an integrated reflector
KR100665299B1 (ko) * 2004-06-10 2007-01-04 서울반도체 주식회사 발광물질
US8318044B2 (en) * 2004-06-10 2012-11-27 Seoul Semiconductor Co., Ltd. Light emitting device
KR100665298B1 (ko) 2004-06-10 2007-01-04 서울반도체 주식회사 발광장치
JP4583076B2 (ja) 2004-06-11 2010-11-17 スタンレー電気株式会社 発光素子
US7065534B2 (en) * 2004-06-23 2006-06-20 Microsoft Corporation Anomaly detection in data perspectives
KR100800207B1 (ko) 2004-06-24 2008-02-01 우베 고산 가부시키가이샤 백색 발광 다이오드 장치
KR20060000313A (ko) * 2004-06-28 2006-01-06 루미마이크로 주식회사 대입경 형광 분말을 포함하는 색변환 발광 장치 그의 제조방법 및 그에 사용되는 수지 조성물
DE102004064150B4 (de) * 2004-06-29 2010-04-29 Osram Opto Semiconductors Gmbh Elektronisches Bauteil mit Gehäuse mit leitfähiger Beschichtung zum ESD-Schutz
WO2006005062A2 (en) * 2004-06-30 2006-01-12 Cree, Inc. Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
WO2006008935A1 (ja) 2004-06-30 2006-01-26 Mitsubishi Chemical Corporation 蛍光体、及び、それを用いた発光素子、並びに、画像表示装置、照明装置
US7255469B2 (en) * 2004-06-30 2007-08-14 3M Innovative Properties Company Phosphor based illumination system having a light guide and an interference reflector
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
US20060006366A1 (en) * 2004-07-06 2006-01-12 Vladimir Abramov Wave length shifting compositions for white emitting diode systems
KR101209488B1 (ko) 2004-07-06 2012-12-07 라이트스케이프 머티어리얼스, 인코포레이티드 효율적인, 녹색 발광 인광체 및 적색 발광 인광체와의 조합
US8508119B2 (en) * 2004-07-13 2013-08-13 Fujikura Ltd. Phosphor and an incandescent lamp color light emitting diode lamp using the same
US8417215B2 (en) * 2004-07-28 2013-04-09 Koninklijke Philips Electronics N.V. Method for positioning of wireless medical devices with short-range radio frequency technology
JP4422653B2 (ja) * 2004-07-28 2010-02-24 Ｄｏｗａエレクトロニクス株式会社 蛍光体およびその製造方法、並びに光源
US7267787B2 (en) * 2004-08-04 2007-09-11 Intematix Corporation Phosphor systems for a white light emitting diode (LED)
US7311858B2 (en) * 2004-08-04 2007-12-25 Intematix Corporation Silicate-based yellow-green phosphors
US8017035B2 (en) * 2004-08-04 2011-09-13 Intematix Corporation Silicate-based yellow-green phosphors
FR2874021B1 (fr) 2004-08-09 2006-09-29 Saint Gobain Cristaux Detecteu Materiau scintillateur dense et rapide a faible luminescence retardee
US7750352B2 (en) 2004-08-10 2010-07-06 Pinion Technologies, Inc. Light strips for lighting and backlighting applications
US7259401B2 (en) * 2004-08-23 2007-08-21 Lite-On Technology Corporation Reflection-type optoelectronic semiconductor device
US20060044806A1 (en) * 2004-08-25 2006-03-02 Abramov Vladimir S Light emitting diode system packages
DE102005042778A1 (de) * 2004-09-09 2006-04-13 Toyoda Gosei Co., Ltd., Nishikasugai Optische Festkörpervorrichtung
CA2579196C (en) * 2004-09-10 2010-06-22 Color Kinetics Incorporated Lighting zone control methods and apparatus
JP4667803B2 (ja) 2004-09-14 2011-04-13 日亜化学工業株式会社 発光装置
US7217583B2 (en) * 2004-09-21 2007-05-15 Cree, Inc. Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension
DE102004045950A1 (de) * 2004-09-22 2006-03-30 Osram Opto Semiconductors Gmbh Gehäuse für ein optoelektronisches Bauelement, optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
US7372198B2 (en) 2004-09-23 2008-05-13 Cree, Inc. Semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor
TWI256149B (en) * 2004-09-27 2006-06-01 Advanced Optoelectronic Tech Light apparatus having adjustable color light and manufacturing method thereof
US20060067073A1 (en) * 2004-09-30 2006-03-30 Chu-Chi Ting White led device
JP4060841B2 (ja) * 2004-10-06 2008-03-12 住友ゴム工業株式会社 生タイヤビード部成型方法、及びそれに用いる生タイヤビード部成型装置
KR100485673B1 (ko) 2004-10-11 2005-04-27 씨엠에스테크놀로지(주) 백색 발광장치
KR101267284B1 (ko) * 2004-10-15 2013-08-07 미쓰비시 가가꾸 가부시키가이샤 형광체, 및 그것을 사용한 발광 장치, 그리고 화상 표시장치, 조명 장치
US7733002B2 (en) 2004-10-19 2010-06-08 Nichia Corporation Semiconductor light emitting device provided with an alkaline earth metal boric halide phosphor for luminescence conversion
KR100899584B1 (ko) * 2004-10-21 2009-05-27 우베 고산 가부시키가이샤 발광 다이오드 소자, 발광 다이오드용 기판 및 발광다이오드 소자의 제조 방법
US20060097385A1 (en) 2004-10-25 2006-05-11 Negley Gerald H Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same
DE102005028748A1 (de) * 2004-10-25 2006-05-04 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung emittierendes Halbleiterbauelement und Bauelementgehäuse
US8134292B2 (en) * 2004-10-29 2012-03-13 Ledengin, Inc. Light emitting device with a thermal insulating and refractive index matching material
US8816369B2 (en) 2004-10-29 2014-08-26 Led Engin, Inc. LED packages with mushroom shaped lenses and methods of manufacturing LED light-emitting devices
US7772609B2 (en) * 2004-10-29 2010-08-10 Ledengin, Inc. (Cayman) LED package with structure and materials for high heat dissipation
US9929326B2 (en) 2004-10-29 2018-03-27 Ledengin, Inc. LED package having mushroom-shaped lens with volume diffuser
US7670872B2 (en) * 2004-10-29 2010-03-02 LED Engin, Inc. (Cayman) Method of manufacturing ceramic LED packages
US8324641B2 (en) * 2007-06-29 2012-12-04 Ledengin, Inc. Matrix material including an embedded dispersion of beads for a light-emitting device
US7473933B2 (en) * 2004-10-29 2009-01-06 Ledengin, Inc. (Cayman) High power LED package with universal bonding pads and interconnect arrangement
JP4757477B2 (ja) * 2004-11-04 2011-08-24 株式会社 日立ディスプレイズ 光源ユニット、それを用いた照明装置及びそれを用いた表示装置
US7462317B2 (en) 2004-11-10 2008-12-09 Enpirion, Inc. Method of manufacturing an encapsulated package for a magnetic device
US7426780B2 (en) 2004-11-10 2008-09-23 Enpirion, Inc. Method of manufacturing a power module
US7481562B2 (en) 2004-11-18 2009-01-27 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Device and method for providing illuminating light using quantum dots
US7866853B2 (en) * 2004-11-19 2011-01-11 Fujikura Ltd. Light-emitting element mounting substrate and manufacturing method thereof, light-emitting element module and manufacturing method thereof, display device, lighting device, and traffic light
WO2006061747A2 (en) 2004-12-07 2006-06-15 Philips Intellectual Property & Standards Gmbh Illumination system comprising a radiation source and a luminescent material
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7745814B2 (en) 2004-12-09 2010-06-29 3M Innovative Properties Company Polychromatic LED's and related semiconductor devices
US7719015B2 (en) * 2004-12-09 2010-05-18 3M Innovative Properties Company Type II broadband or polychromatic LED's
US20060125716A1 (en) * 2004-12-10 2006-06-15 Wong Lye Y Light-emitting diode display with compartment
JP4582095B2 (ja) 2004-12-17 2010-11-17 宇部興産株式会社 光変換構造体およびそれを利用した発光装置
JP4591071B2 (ja) * 2004-12-20 2010-12-01 日亜化学工業株式会社 半導体装置
US7322732B2 (en) 2004-12-23 2008-01-29 Cree, Inc. Light emitting diode arrays for direct backlighting of liquid crystal displays
US8277686B2 (en) 2004-12-27 2012-10-02 Ube Industries, Ltd. Sialon phosphor particles and production method thereof
JP2006209076A (ja) * 2004-12-27 2006-08-10 Nichia Chem Ind Ltd 導光体およびそれを用いた面発光装置
TWI245440B (en) * 2004-12-30 2005-12-11 Ind Tech Res Inst Light emitting diode
US8125137B2 (en) 2005-01-10 2012-02-28 Cree, Inc. Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same
US7564180B2 (en) 2005-01-10 2009-07-21 Cree, Inc. Light emission device and method utilizing multiple emitters and multiple phosphors
CN101103088A (zh) * 2005-01-10 2008-01-09 皇家飞利浦电子股份有限公司 包含陶瓷发光转换器的照明系统
US9070850B2 (en) 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
US7646033B2 (en) * 2005-01-11 2010-01-12 Semileds Corporation Systems and methods for producing white-light light emitting diodes
US8680534B2 (en) 2005-01-11 2014-03-25 Semileds Corporation Vertical light emitting diodes (LED) having metal substrate and spin coated phosphor layer for producing white light
US8012774B2 (en) * 2005-01-11 2011-09-06 SemiLEDs Optoelectronics Co., Ltd. Coating process for a light-emitting diode (LED)
US7195944B2 (en) * 2005-01-11 2007-03-27 Semileds Corporation Systems and methods for producing white-light emitting diodes
TWI249861B (en) * 2005-01-12 2006-02-21 Lighthouse Technology Co Ltd Wavelength converting substance and light emitting device and encapsulating material comprising the same
US7304694B2 (en) 2005-01-12 2007-12-04 Cree, Inc. Solid colloidal dispersions for backlighting of liquid crystal displays
US7777247B2 (en) * 2005-01-14 2010-08-17 Cree, Inc. Semiconductor light emitting device mounting substrates including a conductive lead extending therein
KR100588209B1 (ko) 2005-01-19 2006-06-08 엘지전자 주식회사 백색 발광 소자 및 그의 제조 방법
US7602116B2 (en) * 2005-01-27 2009-10-13 Advanced Optoelectronic Technology, Inc. Light apparatus capable of emitting light of multiple wavelengths using nanometer fluorescent material, light device and manufacturing method thereof
EP1686630A3 (en) 2005-01-31 2009-03-04 Samsung Electronics Co., Ltd. Led device having diffuse reflective surface
EP1845146B1 (en) * 2005-01-31 2015-03-04 Ube Industries, Ltd. Red emitting nitride phosphor and process for producing the same
KR101139891B1 (ko) * 2005-01-31 2012-04-27 렌슬러 폴리테크닉 인스티튜트 확산 반사면을 구비한 발광 다이오드 소자
KR20060088228A (ko) * 2005-02-01 2006-08-04 어드밴스드 옵토일렉트로닉 테크놀로지 인코포레이티드 나노미터 형광 물질을 이용하여 다수 파장의 빛을 방출할수 있는 발광 장치, 발광 소자 및 그의 제조 방법
US7358542B2 (en) * 2005-02-02 2008-04-15 Lumination Llc Red emitting phosphor materials for use in LED and LCD applications
US20070114562A1 (en) * 2005-11-22 2007-05-24 Gelcore, Llc Red and yellow phosphor-converted LEDs for signal applications
US7497973B2 (en) 2005-02-02 2009-03-03 Lumination Llc Red line emitting phosphor materials for use in LED applications
US7648649B2 (en) * 2005-02-02 2010-01-19 Lumination Llc Red line emitting phosphors for use in led applications
DE102005008834A1 (de) * 2005-02-16 2006-08-24 Aspre Ag Display zur Erstellung von durch auffallendes Licht erkennbaren farbigen Bildern und Texten
TW201403859A (zh) 2005-02-18 2014-01-16 Nichia Corp 具備控制配光特性用之透鏡之發光裝置
JP4669713B2 (ja) * 2005-02-18 2011-04-13 株式会社リコー 画像読取装置及び画像形成装置
CN101124293A (zh) * 2005-02-21 2008-02-13 皇家飞利浦电子股份有限公司 包含辐射源和发光材料的照明系统
CN1684279A (zh) * 2005-02-25 2005-10-19 炬鑫科技股份有限公司 发光元件
US20060193131A1 (en) * 2005-02-28 2006-08-31 Mcgrath William R Circuit devices which include light emitting diodes, assemblies which include such circuit devices, and methods for directly replacing fluorescent tubes
EP1854863A4 (en) * 2005-02-28 2012-02-22 Mitsubishi Chem Corp LUMINOPHORE, PROCESS FOR PRODUCING THE SAME, AND APPLICATION
US7439668B2 (en) * 2005-03-01 2008-10-21 Lumination Llc Oxynitride phosphors for use in lighting applications having improved color quality
JP4866558B2 (ja) * 2005-03-10 2012-02-01 シチズン電子株式会社 画像撮影用照明装置
CN100454590C (zh) * 2005-03-11 2009-01-21 鸿富锦精密工业（深圳）有限公司 发光二极管、发光二极管模组及背光系统
US7274045B2 (en) * 2005-03-17 2007-09-25 Lumination Llc Borate phosphor materials for use in lighting applications
JP5652426B2 (ja) * 2005-03-18 2015-01-14 三菱化学株式会社 蛍光体混合物、発光装置、画像表示装置、及び照明装置
JP5286639B2 (ja) * 2005-03-18 2013-09-11 三菱化学株式会社 蛍光体混合物、発光装置、画像表示装置、及び照明装置
US8269410B2 (en) 2005-03-18 2012-09-18 Mitsubishi Chemical Corporation Light-emitting device, white light-emitting device, illuminator, and image display
TWI249867B (en) 2005-03-24 2006-02-21 Lighthouse Technology Co Ltd Light-emitting diode package, cold cathode fluorescence lamp and photoluminescence material thereof
US7276183B2 (en) 2005-03-25 2007-10-02 Sarnoff Corporation Metal silicate-silica-based polymorphous phosphors and lighting devices
US7316497B2 (en) * 2005-03-29 2008-01-08 3M Innovative Properties Company Fluorescent volume light source
JP2006278980A (ja) * 2005-03-30 2006-10-12 Sanyo Electric Co Ltd 半導体発光装置
KR20080009198A (ko) * 2005-03-31 2008-01-25 도와 일렉트로닉스 가부시키가이샤 형광체, 형광체 시트 및 그 제조 방법, 및 상기 형광체를이용한 발광 장치
KR101142519B1 (ko) * 2005-03-31 2012-05-08 서울반도체 주식회사 적색 형광체 및 녹색 형광체를 갖는 백색 발광다이오드를채택한 백라이트 패널
US7791561B2 (en) 2005-04-01 2010-09-07 Prysm, Inc. Display systems having screens with optical fluorescent materials
US7474286B2 (en) 2005-04-01 2009-01-06 Spudnik, Inc. Laser displays using UV-excitable phosphors emitting visible colored light
US20060221022A1 (en) * 2005-04-01 2006-10-05 Roger Hajjar Laser vector scanner systems with display screens having optical fluorescent materials
US7733310B2 (en) 2005-04-01 2010-06-08 Prysm, Inc. Display screens having optical fluorescent materials
EP1872625A4 (en) * 2005-04-06 2014-05-07 Koninkl Philips Nv WHITE LUMINAIRE WITH ADJUSTABLE COLOR TEMPERATURE ADJUSTABLE
DE102006016548B9 (de) 2005-04-15 2021-12-16 Osram Gmbh Blau bis Gelb-Orange emittierender Leuchtstoff und Lichtquelle mit derartigem Leuchtstoff
US7489073B2 (en) * 2005-04-15 2009-02-10 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Blue to yellow-orange emitting phosphor, and light source having such a phosphor
JP4972957B2 (ja) * 2005-04-18 2012-07-11 三菱化学株式会社 蛍光体、及びそれを用いた発光装置、並びに画像表示装置、照明装置
US20060255712A1 (en) * 2005-04-19 2006-11-16 Masatsugu Masuda Light emitting apparatus, liquid crystal display apparatus and lighting apparatus
US7329371B2 (en) * 2005-04-19 2008-02-12 Lumination Llc Red phosphor for LED based lighting
JP4843990B2 (ja) * 2005-04-22 2011-12-21 日亜化学工業株式会社 蛍光体およびそれを用いた発光装置
GB2425449B (en) * 2005-04-26 2007-05-23 City Greening Engineering Comp Irrigation system
US8000005B2 (en) 2006-03-31 2011-08-16 Prysm, Inc. Multilayered fluorescent screens for scanning beam display systems
US7994702B2 (en) 2005-04-27 2011-08-09 Prysm, Inc. Scanning beams displays based on light-emitting screens having phosphors
US8089425B2 (en) 2006-03-03 2012-01-03 Prysm, Inc. Optical designs for scanning beam display systems using fluorescent screens
JP4535928B2 (ja) * 2005-04-28 2010-09-01 シャープ株式会社 半導体発光装置
US7690167B2 (en) * 2005-04-28 2010-04-06 Antonic James P Structural support framing assembly
KR100704492B1 (ko) * 2005-05-02 2007-04-09 한국화학연구원 형광체를 이용한 백색 발광 다이오드의 제조 방법
JP4738049B2 (ja) * 2005-05-02 2011-08-03 ユニ・チャーム株式会社 吸収性物品
US7602408B2 (en) 2005-05-04 2009-10-13 Honeywood Technologies, Llc Luminance suppression power conservation
US7760210B2 (en) * 2005-05-04 2010-07-20 Honeywood Technologies, Llc White-based power savings
TWI260799B (en) * 2005-05-06 2006-08-21 Harvatek Corp Multi-wavelength white light light-emitting diode
DE102005023134A1 (de) * 2005-05-19 2006-11-23 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Lumineszenzkonversions-LED
EP1888711B1 (en) 2005-05-24 2012-11-14 Seoul Semiconductor Co., Ltd. Light emitting device and phosphor of alkaline earth sulfide therefor
TWI475093B (zh) 2005-05-24 2015-03-01 Mitsubishi Chem Corp 螢光體及其應用
US7632000B2 (en) * 2005-05-25 2009-12-15 Samsung Electronics Co., Ltd. Backlight assembly and liquid crystal display device having the same
TW200704283A (en) 2005-05-27 2007-01-16 Lamina Ceramics Inc Solid state LED bridge rectifier light engine
JP2007049114A (ja) * 2005-05-30 2007-02-22 Sharp Corp 発光装置とその製造方法
US7753553B2 (en) * 2005-06-02 2010-07-13 Koniklijke Philips Electronics N.V. Illumination system comprising color deficiency compensating luminescent material
US8718437B2 (en) 2006-03-07 2014-05-06 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
US8215815B2 (en) 2005-06-07 2012-07-10 Oree, Inc. Illumination apparatus and methods of forming the same
KR101017917B1 (ko) * 2005-06-07 2011-03-04 가부시키가이샤후지쿠라 발광소자 실장용 기판, 발광소자 모듈, 조명장치, 표시장치및 교통 신호기
US8272758B2 (en) 2005-06-07 2012-09-25 Oree, Inc. Illumination apparatus and methods of forming the same
WO2006131924A2 (en) 2005-06-07 2006-12-14 Oree, Advanced Illumination Solutions Inc. Illumination apparatus
JP2006343500A (ja) * 2005-06-08 2006-12-21 Olympus Corp 光源装置及び投影光学装置
US9412926B2 (en) 2005-06-10 2016-08-09 Cree, Inc. High power solid-state lamp
JP5124978B2 (ja) * 2005-06-13 2013-01-23 日亜化学工業株式会社 発光装置
US20060290133A1 (en) * 2005-06-13 2006-12-28 Westrim, Inc. Postbound album
US7980743B2 (en) 2005-06-14 2011-07-19 Cree, Inc. LED backlighting for displays
KR101201266B1 (ko) * 2005-06-14 2012-11-14 덴끼 가가꾸 고교 가부시키가이샤 형광체 함유 수지 조성물 및 시트, 그것들을 사용한 발광소자
JP2006351773A (ja) * 2005-06-15 2006-12-28 Rohm Co Ltd 半導体発光装置
KR100638868B1 (ko) * 2005-06-20 2006-10-27 삼성전기주식회사 금속 반사 층을 형성한 엘이디 패키지 및 그 제조 방법
KR101266130B1 (ko) 2005-06-23 2013-05-27 렌슬러 폴리테크닉 인스티튜트 단파장 ｌｅｄ들 및 다운-컨버젼 물질들로 백색광을생성하기 위한 패키지 설계
JP5426160B2 (ja) 2005-06-28 2014-02-26 ソウル バイオシス カンパニー リミテッド 交流用発光素子
US8896216B2 (en) 2005-06-28 2014-11-25 Seoul Viosys Co., Ltd. Illumination system
TWI422044B (zh) * 2005-06-30 2014-01-01 Cree Inc 封裝發光裝置之晶片尺度方法及經晶片尺度封裝之發光裝置
DE102005038698A1 (de) * 2005-07-08 2007-01-18 Tridonic Optoelectronics Gmbh Optoelektronische Bauelemente mit Haftvermittler
JP2007027431A (ja) * 2005-07-15 2007-02-01 Toshiba Corp 発光装置
KR100649679B1 (ko) * 2005-07-19 2006-11-27 삼성전기주식회사 측면 발광형 엘이디 패키지 및 이를 이용한 백 라이트 유닛
US20070025106A1 (en) * 2005-07-29 2007-02-01 Korry Electronics Co. Night vision compatible area light fixture
TW200717866A (en) * 2005-07-29 2007-05-01 Toshiba Kk Semiconductor light emitting device
WO2007015732A2 (en) * 2005-08-01 2007-02-08 Intex Recreation Corp. A method of varying the color of light emitted by a light-emitting device
KR100533922B1 (ko) * 2005-08-05 2005-12-06 알티전자 주식회사 황색 형광체 및 이를 이용한 백색 발광 장치
CN101238595B (zh) * 2005-08-10 2012-07-04 宇部兴产株式会社 发光二极管用基板以及发光二极管
KR20080037707A (ko) * 2005-08-11 2008-04-30 메르크 파텐트 게엠베하 규칙적으로 배열된 공동을 가진 광자 재료
US7329907B2 (en) 2005-08-12 2008-02-12 Avago Technologies, Ecbu Ip Pte Ltd Phosphor-converted LED devices having improved light distribution uniformity
US20070045641A1 (en) * 2005-08-23 2007-03-01 Yin Chua Janet B Light source with UV LED and UV reflector
KR100691273B1 (ko) * 2005-08-23 2007-03-12 삼성전기주식회사 복합 형광체 분말, 이를 이용한 발광 장치 및 복합 형광체분말의 제조 방법
KR20080037734A (ko) 2005-08-23 2008-04-30 가부시끼가이샤 도시바 발광 장치와 그를 이용한 백 라이트 및 액정 표시 장치
US7847302B2 (en) * 2005-08-26 2010-12-07 Koninklijke Philips Electronics, N.V. Blue LED with phosphor layer for producing white light and different phosphor in outer lens for reducing color temperature
US20070052342A1 (en) * 2005-09-01 2007-03-08 Sharp Kabushiki Kaisha Light-emitting device
JP2007067326A (ja) * 2005-09-02 2007-03-15 Shinko Electric Ind Co Ltd 発光ダイオード及びその製造方法
JP2007110090A (ja) * 2005-09-13 2007-04-26 Sony Corp ＧａＮ系半導体発光素子、発光装置、画像表示装置、面状光源装置、及び、液晶表示装置組立体
EP1925037A4 (en) * 2005-09-13 2011-10-26 Showa Denko Kk LIGHT EMITTING DEVICE
JP4966530B2 (ja) 2005-09-15 2012-07-04 国立大学法人 新潟大学 蛍光体
DE102005045649A1 (de) * 2005-09-23 2007-03-29 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Lichtmodul und Lichtsystem
WO2007037339A1 (ja) * 2005-09-29 2007-04-05 Kabushiki Kaisha Toshiba 白色発光装置とその製造方法、およびそれを用いたバックライト並びに液晶表示装置
CN101278416B (zh) * 2005-09-30 2011-01-12 日亚化学工业株式会社 发光装置以及使用该发光装置的背光光源单元
KR100724591B1 (ko) 2005-09-30 2007-06-04 서울반도체 주식회사 발광 소자 및 이를 포함한 ｌｅｄ 백라이트
WO2007041563A2 (en) * 2005-09-30 2007-04-12 The Regents Of The University Of California Cerium based phosphor materials for solid-state lighting applications
US7688172B2 (en) 2005-10-05 2010-03-30 Enpirion, Inc. Magnetic device having a conductive clip
US8701272B2 (en) 2005-10-05 2014-04-22 Enpirion, Inc. Method of forming a power module with a magnetic device having a conductive clip
US8139362B2 (en) * 2005-10-05 2012-03-20 Enpirion, Inc. Power module with a magnetic device having a conductive clip
US8631560B2 (en) 2005-10-05 2014-01-21 Enpirion, Inc. Method of forming a magnetic device having a conductive clip
KR100693463B1 (ko) * 2005-10-21 2007-03-12 한국광기술원 2 이상의 물질을 포함하는 봉지층을 구비한 광 확산 발광다이오드
US7479660B2 (en) * 2005-10-21 2009-01-20 Perkinelmer Elcos Gmbh Multichip on-board LED illumination device
US7360934B2 (en) * 2005-10-24 2008-04-22 Sumitomo Electric Industries, Ltd. Light supply unit, illumination unit, and illumination system
KR100571882B1 (ko) * 2005-10-27 2006-04-17 알티전자 주식회사 황색 형광체 및 이를 포함하는 백색 발광 장치
KR100771779B1 (ko) * 2005-11-04 2007-10-30 삼성전기주식회사 황색 형광체 및 이를 이용한 백색 발광 장치
TWI291247B (en) * 2005-11-11 2007-12-11 Univ Nat Chiao Tung Nanoparticle structure and manufacturing process of multi-wavelength light emitting devices
KR101258397B1 (ko) * 2005-11-11 2013-04-30 서울반도체 주식회사 구리 알칼리토 실리케이트 혼성 결정 형광체
US20070114561A1 (en) * 2005-11-22 2007-05-24 Comanzo Holly A High efficiency phosphor for use in LEDs
WO2007060573A1 (en) * 2005-11-24 2007-05-31 Koninklijke Philips Electronics N.V. Display device with solid state fluorescent material
US8116181B2 (en) * 2005-11-28 2012-02-14 Koninklijke Philips Electronics N.V. Apparatus for and method for recording data on a rewritable optical record carrier
US20070125984A1 (en) * 2005-12-01 2007-06-07 Sarnoff Corporation Phosphors protected against moisture and LED lighting devices
US20070128745A1 (en) * 2005-12-01 2007-06-07 Brukilacchio Thomas J Phosphor deposition method and apparatus for making light emitting diodes
US8906262B2 (en) 2005-12-02 2014-12-09 Lightscape Materials, Inc. Metal silicate halide phosphors and LED lighting devices using the same
CN100334185C (zh) * 2005-12-09 2007-08-29 天津理工大学 稀土钇铝石榴石发光材料及气相制备法
JP5097713B2 (ja) * 2005-12-14 2012-12-12 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 照明装置及び照明装置の製造方法
KR101055772B1 (ko) 2005-12-15 2011-08-11 서울반도체 주식회사 발광장치
JP2007165728A (ja) * 2005-12-15 2007-06-28 Toshiba Discrete Technology Kk 発光装置及び可視光通信用照明装置
JP2007165811A (ja) 2005-12-16 2007-06-28 Nichia Chem Ind Ltd 発光装置
US7768192B2 (en) 2005-12-21 2010-08-03 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
DE102005061204A1 (de) * 2005-12-21 2007-07-05 Perkinelmer Elcos Gmbh Beleuchtungsvorrichtung, Beleuchtungssteuergerät und Beleuchtungssystem
EP1964104A4 (en) * 2005-12-21 2012-01-11 Cree Inc SHIELD AND LIGHTING PROCEDURE
CN101460779A (zh) 2005-12-21 2009-06-17 科锐Led照明技术公司 照明装置
US20070158660A1 (en) * 2005-12-22 2007-07-12 Acol Technologies S.A. Optically active compositions and combinations of same with InGaN semiconductors
US7614759B2 (en) 2005-12-22 2009-11-10 Cree Led Lighting Solutions, Inc. Lighting device
CN1988188A (zh) * 2005-12-23 2007-06-27 香港应用科技研究院有限公司 具有荧光层结构的发光二极管晶粒及其制造方法
US7659544B2 (en) * 2005-12-23 2010-02-09 Hong Kong Applied Science And Technology Research Institute Co., Ltd. Light emitting device with at least two alternately driven light emitting diodes
US7474287B2 (en) * 2005-12-23 2009-01-06 Hong Kong Applied Science And Technology Light emitting device
US7914197B2 (en) 2005-12-27 2011-03-29 Showa Denko K.K. Light guide member, flat light source device, and display device
US9351355B2 (en) 2005-12-30 2016-05-24 Seoul Semiconductor Co., Ltd. Illumination system having color temperature control and method for controlling the same
KR100728134B1 (ko) * 2005-12-30 2007-06-13 김재조 발광 장치
JP2009530798A (ja) 2006-01-05 2009-08-27 イルミテックス， インコーポレイテッド Ｌｅｄから光を導くための独立した光学デバイス
DE102006001195A1 (de) 2006-01-10 2007-07-12 Sms Demag Ag Verfahren zum Gieß-Walzen mit erhöhter Gießgeschwindigkeit und daran anschließendem Warmwalzen von relativ dünnen Metall-,insbesondere Stahlwerkstoff-Strängen,und Gieß-Walz-Einrichtung
CN100464233C (zh) * 2006-01-17 2009-02-25 群康科技(深圳)有限公司 背光模块
KR100821684B1 (ko) * 2006-01-17 2008-04-11 주식회사 에스티앤아이 백색 발광 다이오드 소자
WO2007083828A1 (ja) 2006-01-19 2007-07-26 Ube Industries, Ltd. セラミックス複合体光変換部材およびそれを用いた発光装置
US8264138B2 (en) * 2006-01-20 2012-09-11 Cree, Inc. Shifting spectral content in solid state light emitters by spatially separating lumiphor films
US8441179B2 (en) 2006-01-20 2013-05-14 Cree, Inc. Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
JP2007226190A (ja) * 2006-01-30 2007-09-06 Konica Minolta Holdings Inc 映像表示装置およびヘッドマウントディスプレイ
DE102006005042A1 (de) 2006-02-03 2007-08-09 Tridonic Optoelectronics Gmbh Licht emittierende Vorrichtung mit nicht-aktiviertem Leuchtstoff
RU2315135C2 (ru) * 2006-02-06 2008-01-20 Владимир Семенович Абрамов Метод выращивания неполярных эпитаксиальных гетероструктур на основе нитридов элементов iii группы
TWI317756B (en) * 2006-02-07 2009-12-01 Coretronic Corp Phosphor, fluorescent gel, and light emitting diode device
WO2007095173A2 (en) 2006-02-14 2007-08-23 Massachusetts Institute Of Technology White light emitting devices
US7884816B2 (en) 2006-02-15 2011-02-08 Prysm, Inc. Correcting pyramidal error of polygon scanner in scanning beam display systems
US8451195B2 (en) 2006-02-15 2013-05-28 Prysm, Inc. Servo-assisted scanning beam display systems using fluorescent screens
US20080000467A1 (en) * 2006-02-16 2008-01-03 Design Annex Disposable charcoal lighting apparatus
US20070194684A1 (en) * 2006-02-21 2007-08-23 Chen Yi-Yi Light emitting diode structure
KR100735453B1 (ko) * 2006-02-22 2007-07-04 삼성전기주식회사 백색 발광 장치
JP5027427B2 (ja) * 2006-02-23 2012-09-19 パナソニック株式会社 発光ダイオードを用いた白色照明装置
JP4992250B2 (ja) * 2006-03-01 2012-08-08 日亜化学工業株式会社 発光装置
US7737634B2 (en) 2006-03-06 2010-06-15 Avago Technologies General Ip (Singapore) Pte. Ltd. LED devices having improved containment for liquid encapsulant
US9874674B2 (en) 2006-03-07 2018-01-23 Samsung Electronics Co., Ltd. Compositions, optical component, system including an optical component, devices, and other products
JP2007250629A (ja) * 2006-03-14 2007-09-27 Toshiba Corp 発光装置及びその製造方法、並びに蛍光パターン形成物
KR100746749B1 (ko) * 2006-03-15 2007-08-09 (주)케이디티 광 여기 시트
US7795600B2 (en) * 2006-03-24 2010-09-14 Goldeneye, Inc. Wavelength conversion chip for use with light emitting diodes and method for making same
JP5032043B2 (ja) * 2006-03-27 2012-09-26 豊田合成株式会社 フェラスメタルアルカリ土類金属ケイ酸塩混合結晶蛍光体およびこれを用いた発光装置
JP4980640B2 (ja) * 2006-03-31 2012-07-18 三洋電機株式会社 照明装置
KR100875443B1 (ko) 2006-03-31 2008-12-23 서울반도체 주식회사 발광 장치
US8969908B2 (en) 2006-04-04 2015-03-03 Cree, Inc. Uniform emission LED package
JP5068472B2 (ja) * 2006-04-12 2012-11-07 昭和電工株式会社 発光装置の製造方法
EP2052589A4 (en) 2006-04-18 2012-09-19 Cree Inc LIGHTING DEVICE AND METHOD
US9084328B2 (en) 2006-12-01 2015-07-14 Cree, Inc. Lighting device and lighting method
US7821194B2 (en) 2006-04-18 2010-10-26 Cree, Inc. Solid state lighting devices including light mixtures
US8513875B2 (en) 2006-04-18 2013-08-20 Cree, Inc. Lighting device and lighting method
US7997745B2 (en) 2006-04-20 2011-08-16 Cree, Inc. Lighting device and lighting method
JP2009534866A (ja) 2006-04-24 2009-09-24 クリー， インコーポレイティッド 横向き平面実装白色ｌｅｄ
FR2900382B1 (fr) * 2006-04-26 2009-02-27 Benotec Soc Par Actions Simpli Chariot de manutention a au moins trois roues directrices
US7888868B2 (en) * 2006-04-28 2011-02-15 Avago Technologies General Ip (Singapore) Pte. Ltd. LED light source with light-directing structures
WO2007130536A2 (en) 2006-05-05 2007-11-15 Cree Led Lighting Solutions, Inc. Lighting device
EP2549330B1 (en) 2006-05-05 2017-08-30 Prysm, Inc. Phosphor compositions and other fluorescent materials for display systems and devices
US20070262288A1 (en) * 2006-05-09 2007-11-15 Soshchin Naum Inorganic fluorescent powder as a solid light source
TWI357435B (en) 2006-05-12 2012-02-01 Lextar Electronics Corp Light emitting diode and wavelength converting mat
WO2007135707A1 (ja) 2006-05-18 2007-11-29 Nichia Corporation 樹脂成形体及び表面実装型発光装置並びにそれらの製造方法
JP4188404B2 (ja) 2006-05-19 2008-11-26 三井金属鉱業株式会社 白色蛍光体および白色発光素子乃至装置
US7846391B2 (en) 2006-05-22 2010-12-07 Lumencor, Inc. Bioanalytical instrumentation using a light source subsystem
JP2009538531A (ja) * 2006-05-23 2009-11-05 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド 照明装置、および、製造方法
US8033692B2 (en) 2006-05-23 2011-10-11 Cree, Inc. Lighting device
US20070274093A1 (en) * 2006-05-25 2007-11-29 Honeywell International, Inc. LED backlight system for LCD displays
CN101077973B (zh) 2006-05-26 2010-09-29 大连路明发光科技股份有限公司 硅酸盐荧光材料及其制造方法以及使用其的发光装置
WO2007139894A2 (en) 2006-05-26 2007-12-06 Cree Led Lighting Solutions, Inc. Solid state light emitting device and method of making same
CN100467170C (zh) * 2006-05-28 2009-03-11 揭朝奎 可焊性粉末冶金轴承及生产工艺
US8596819B2 (en) 2006-05-31 2013-12-03 Cree, Inc. Lighting device and method of lighting
KR101044812B1 (ko) * 2006-05-31 2011-06-27 가부시키가이샤후지쿠라 발광소자 실장용 기판과 그 제조방법, 발광소자 모듈과 그 제조방법, 표시장치, 조명장치 및 교통 신호기
US20070279914A1 (en) * 2006-06-02 2007-12-06 3M Innovative Properties Company Fluorescent volume light source with reflector
US20070280622A1 (en) * 2006-06-02 2007-12-06 3M Innovative Properties Company Fluorescent light source having light recycling means
JP4899651B2 (ja) * 2006-06-07 2012-03-21 ソニー株式会社 発光ダイオード点灯回路、照明装置及び液晶表示装置
US7863634B2 (en) * 2006-06-12 2011-01-04 3M Innovative Properties Company LED device with re-emitting semiconductor construction and reflector
US7952110B2 (en) 2006-06-12 2011-05-31 3M Innovative Properties Company LED device with re-emitting semiconductor construction and converging optical element
US20070284565A1 (en) * 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
KR20090018631A (ko) * 2006-06-12 2009-02-20 쓰리엠 이노베이티브 프로퍼티즈 컴파니 재발광 반도체 구성 및 수렴 광학 요소를 갖는 ｌｅｄ 소자
US7902542B2 (en) 2006-06-14 2011-03-08 3M Innovative Properties Company Adapted LED device with re-emitting semiconductor construction
JP5088320B2 (ja) * 2006-06-21 2012-12-05 株式会社村田製作所 透光性セラミック、ならびに光学部品および光学装置
JP4282693B2 (ja) * 2006-07-04 2009-06-24 株式会社東芝 半導体発光素子及びその製造方法
JP4520437B2 (ja) * 2006-07-26 2010-08-04 信越化学工業株式会社 Ｌｅｄ用蛍光物質入り硬化性シリコーン組成物およびその組成物を使用するｌｅｄ発光装置。
CN100590172C (zh) 2006-07-26 2010-02-17 北京有色金属研究总院 一种含硅的led荧光粉及其制造方法和所制成的发光器件
US7943952B2 (en) 2006-07-31 2011-05-17 Cree, Inc. Method of uniform phosphor chip coating and LED package fabricated using method
US7804147B2 (en) 2006-07-31 2010-09-28 Cree, Inc. Light emitting diode package element with internal meniscus for bubble free lens placement
JP4957110B2 (ja) * 2006-08-03 2012-06-20 日亜化学工業株式会社 発光装置
US20080029720A1 (en) * 2006-08-03 2008-02-07 Intematix Corporation LED lighting arrangement including light emitting phosphor
US20080029774A1 (en) * 2006-08-04 2008-02-07 Acol Technologies S.A. Semiconductor light source packages with broadband and angular uniformity support
WO2008022552A1 (fr) 2006-08-15 2008-02-28 Luming Science And Technology Group Co., Ltd. Matériau luminescent à base de silicate avec pic multi-émission, son procédé de fabrication et son utilisation dans un dispositif d'éclairage
TWI317562B (en) * 2006-08-16 2009-11-21 Ind Tech Res Inst Light-emitting device
US20080113877A1 (en) * 2006-08-16 2008-05-15 Intematix Corporation Liquid solution deposition of composition gradient materials
US7763478B2 (en) * 2006-08-21 2010-07-27 Cree, Inc. Methods of forming semiconductor light emitting device packages by liquid injection molding
WO2008024761A2 (en) 2006-08-21 2008-02-28 Innotec Corporation Electrical device having boardless electrical component mounting arrangement
JP5100059B2 (ja) * 2006-08-24 2012-12-19 スタンレー電気株式会社 蛍光体、その製造方法およびそれを用いた発光装置
KR101258227B1 (ko) 2006-08-29 2013-04-25 서울반도체 주식회사 발광 소자
US7703942B2 (en) 2006-08-31 2010-04-27 Rensselaer Polytechnic Institute High-efficient light engines using light emitting diodes
US7910938B2 (en) 2006-09-01 2011-03-22 Cree, Inc. Encapsulant profile for light emitting diodes
US8425271B2 (en) 2006-09-01 2013-04-23 Cree, Inc. Phosphor position in light emitting diodes
JP5157909B2 (ja) 2006-09-25 2013-03-06 宇部興産株式会社 光変換用セラミックス複合体およびそれを用いた発光装置
WO2008042703A1 (en) * 2006-09-29 2008-04-10 3M Innovative Properties Company Fluorescent volume light source having multiple fluorescent species
WO2008042351A2 (en) 2006-10-02 2008-04-10 Illumitex, Inc. Led system and method
US20090275157A1 (en) * 2006-10-02 2009-11-05 Illumitex, Inc. Optical device shaping
KR101497104B1 (ko) * 2006-10-03 2015-02-27 라이트스케이프 머티어리얼스, 인코포레이티드 금속 실리케이트 할라이드 형광체 및 이를 이용한 ｌｅｄ 조명 디바이스
GB2442505A (en) * 2006-10-04 2008-04-09 Sharp Kk A display with a primary light source for illuminating a nanophosphor re-emission material
WO2008043519A1 (en) * 2006-10-10 2008-04-17 Lexedis Lighting Gmbh Phosphor-converted light emitting diode
TW200825571A (en) * 2006-10-18 2008-06-16 Koninkl Philips Electronics Nv Illumination system and display device
US9120975B2 (en) 2006-10-20 2015-09-01 Intematix Corporation Yellow-green to yellow-emitting phosphors based on terbium-containing aluminates
US8133461B2 (en) * 2006-10-20 2012-03-13 Intematix Corporation Nano-YAG:Ce phosphor compositions and their methods of preparation
US8529791B2 (en) 2006-10-20 2013-09-10 Intematix Corporation Green-emitting, garnet-based phosphors in general and backlighting applications
US8475683B2 (en) 2006-10-20 2013-07-02 Intematix Corporation Yellow-green to yellow-emitting phosphors based on halogenated-aluminates
KR20090082449A (ko) * 2006-10-31 2009-07-30 티아이알 테크놀로지 엘피 광원
US8029155B2 (en) 2006-11-07 2011-10-04 Cree, Inc. Lighting device and lighting method
US10295147B2 (en) * 2006-11-09 2019-05-21 Cree, Inc. LED array and method for fabricating same
CN101182416B (zh) * 2006-11-13 2010-09-22 北京有色金属研究总院 含二价金属元素的铝酸盐荧光粉及制造方法和发光器件
TWI496315B (zh) * 2006-11-13 2015-08-11 Cree Inc 照明裝置、被照明的殼體及照明方法
US7769066B2 (en) 2006-11-15 2010-08-03 Cree, Inc. Laser diode and method for fabricating same
US8045595B2 (en) 2006-11-15 2011-10-25 Cree, Inc. Self aligned diode fabrication method and self aligned laser diode
US7813400B2 (en) 2006-11-15 2010-10-12 Cree, Inc. Group-III nitride based laser diode and method for fabricating same
US7889421B2 (en) 2006-11-17 2011-02-15 Rensselaer Polytechnic Institute High-power white LEDs and manufacturing method thereof
US7521862B2 (en) * 2006-11-20 2009-04-21 Philips Lumileds Lighting Co., Llc Light emitting device including luminescent ceramic and light-scattering material
WO2008063657A2 (en) * 2006-11-21 2008-05-29 Qd Vision, Inc. Light emitting devices and displays with improved performance
US7692263B2 (en) 2006-11-21 2010-04-06 Cree, Inc. High voltage GaN transistors
JP5367218B2 (ja) 2006-11-24 2013-12-11 シャープ株式会社 蛍光体の製造方法および発光装置の製造方法
US9441793B2 (en) 2006-12-01 2016-09-13 Cree, Inc. High efficiency lighting device including one or more solid state light emitters, and method of lighting
EP2095011A1 (en) 2006-12-04 2009-09-02 Cree Led Lighting Solutions, Inc. Lighting assembly and lighting method
CN101622493A (zh) 2006-12-04 2010-01-06 科锐Led照明科技公司 照明装置和照明方法
WO2008073794A1 (en) 2006-12-07 2008-06-19 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
WO2008073400A1 (en) 2006-12-11 2008-06-19 The Regents Of The University Of California Transparent light emitting diodes
JP5028562B2 (ja) * 2006-12-11 2012-09-19 株式会社ジャパンディスプレイイースト 照明装置及びこの照明装置を用いた表示装置
US8013506B2 (en) 2006-12-12 2011-09-06 Prysm, Inc. Organic compounds for adjusting phosphor chromaticity
ES2346569T3 (es) * 2006-12-12 2010-10-18 Inverto Nv Iluminacion con led que tiene temperatura de color (ct) continua y ajustable, mientras se mantiene un cri elevado.
TWI359857B (en) * 2006-12-25 2012-03-11 Ind Tech Res Inst White light illumination device
KR100788556B1 (ko) * 2007-01-03 2007-12-26 삼성에스디아이 주식회사 광흡수층을 갖는 액정 표시 장치용 연성 회로 기판
KR100788557B1 (ko) * 2007-01-03 2007-12-26 삼성에스디아이 주식회사 광흡수층을 갖는 액정 표시 장치용 연성 회로 기판
JP4660507B2 (ja) * 2007-01-03 2011-03-30 三星モバイルディスプレイ株式會社 フレキシブル回路基板及びこれを有する液晶表示装置
JP2008186802A (ja) * 2007-01-04 2008-08-14 Toshiba Corp バックライト装置、液晶表示装置
US8836212B2 (en) 2007-01-11 2014-09-16 Qd Vision, Inc. Light emissive printed article printed with quantum dot ink
US7800304B2 (en) * 2007-01-12 2010-09-21 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Multi-chip packaged LED light source
US7834367B2 (en) 2007-01-19 2010-11-16 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating
TWI325186B (en) * 2007-01-19 2010-05-21 Harvatek Corp Led chip package structure using ceramic material as a substrate
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US8232564B2 (en) 2007-01-22 2012-07-31 Cree, Inc. Wafer level phosphor coating technique for warm light emitting diodes
US9159888B2 (en) 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
CN101250408B (zh) * 2007-01-22 2011-03-23 罗维鸿 暖白色发光二极管及其带橙黄辐射的荧光粉
US7781783B2 (en) * 2007-02-07 2010-08-24 SemiLEDs Optoelectronics Co., Ltd. White light LED device
US9061450B2 (en) 2007-02-12 2015-06-23 Cree, Inc. Methods of forming packaged semiconductor light emitting devices having front contacts by compression molding
US7709853B2 (en) * 2007-02-12 2010-05-04 Cree, Inc. Packaged semiconductor light emitting devices having multiple optical elements
US20080192458A1 (en) * 2007-02-12 2008-08-14 Intematix Corporation Light emitting diode lighting system
US20080197369A1 (en) * 2007-02-20 2008-08-21 Cree, Inc. Double flip semiconductor device and method for fabrication
KR101499269B1 (ko) * 2007-02-22 2015-03-09 크리, 인코포레이티드 발광 장치, 발광 방법, 광 필터 및 광 필터링 방법
DE102007009820A1 (de) * 2007-02-28 2008-09-04 Osram Opto Semiconductors Gmbh Optische Anordnung und optisches Verfahren
US20080218998A1 (en) * 2007-03-08 2008-09-11 Quest William J Device having multiple light sources and methods of use
TWI390748B (zh) * 2007-03-09 2013-03-21 Light energy of the battery efficiency film
KR100818518B1 (ko) * 2007-03-14 2008-03-31 삼성전기주식회사 Ｌｅｄ 패키지
US7712933B2 (en) 2007-03-19 2010-05-11 Interlum, Llc Light for vehicles
US8408773B2 (en) 2007-03-19 2013-04-02 Innotec Corporation Light for vehicles
US7687816B2 (en) * 2007-03-20 2010-03-30 International Business Machines Corporation Light emitting diode
CN101682709B (zh) * 2007-03-20 2013-11-06 Prysm公司 将广告或其它应用数据传送到显示系统并进行显示
TWI338957B (en) 2007-03-23 2011-03-11 Lite On Technology Corp Light-emitting device with open-loop control and manufacturing method thereof
KR100848872B1 (ko) * 2007-03-29 2008-07-29 서울반도체 주식회사 Ｒｇｂ를 이용한 발광장치
TWI378138B (en) * 2007-04-02 2012-12-01 Univ Nat Chiao Tung Green-emitting phosphors and process for producing the same
DE102008017039A1 (de) 2007-04-05 2008-10-09 Koito Manufacturing Co., Ltd. Leuchtstoff
US7697183B2 (en) 2007-04-06 2010-04-13 Prysm, Inc. Post-objective scanning beam systems
US8169454B1 (en) 2007-04-06 2012-05-01 Prysm, Inc. Patterning a surface using pre-objective and post-objective raster scanning systems
US7964888B2 (en) 2007-04-18 2011-06-21 Cree, Inc. Semiconductor light emitting device packages and methods
WO2008134056A1 (en) * 2007-04-26 2008-11-06 Deak-Lam Inc. Photon energy coversion structure
WO2008135072A1 (de) * 2007-05-04 2008-11-13 Noctron Soparfi S.A. Beleuchtungsvorrichtung sowie flüssigkristall-bildschirm mit einer solchen beleuchtungsvorrichtung
DE102007026795A1 (de) * 2007-05-04 2008-11-06 Noctron Holding S.A. Beleuchtungsvorrichtung sowie Flüssigkristall-Bildschirm mit einer solchen Beleuchtungsvorrichtung
US7910944B2 (en) 2007-05-04 2011-03-22 Cree, Inc. Side mountable semiconductor light emitting device packages and panels
DE102007025573A1 (de) * 2007-05-31 2008-12-04 Noctron Holding S.A. Flüssigkristall-Anzeigefeld
WO2008137977A1 (en) 2007-05-08 2008-11-13 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
US7781779B2 (en) * 2007-05-08 2010-08-24 Luminus Devices, Inc. Light emitting devices including wavelength converting material
TWI422785B (zh) 2007-05-08 2014-01-11 Cree Inc 照明裝置及照明方法
WO2008137983A1 (en) 2007-05-08 2008-11-13 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
CN101711325B (zh) * 2007-05-08 2013-07-10 科锐公司 照明装置和照明方法
WO2008137974A1 (en) 2007-05-08 2008-11-13 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
TWI349694B (en) * 2007-05-14 2011-10-01 Univ Nat Chiao Tung A novel phosphor for white light-emitting diodes and fabrication of the same
US8038822B2 (en) 2007-05-17 2011-10-18 Prysm, Inc. Multilayered screens with light-emitting stripes for scanning beam display systems
US20090001397A1 (en) * 2007-05-29 2009-01-01 Oree, Advanced Illumiation Solutions Inc. Method and device for providing circumferential illumination
KR100886785B1 (ko) * 2007-06-04 2009-03-04 박기운 발광 장치 및 그 제조방법 및 백색계 발광 다이오드
US7999283B2 (en) 2007-06-14 2011-08-16 Cree, Inc. Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes
US8767215B2 (en) 2007-06-18 2014-07-01 Leddartech Inc. Method for detecting objects with light
CA2635155C (en) * 2007-06-18 2015-11-24 Institut National D'optique Method for detecting objects with visible light
US7942556B2 (en) * 2007-06-18 2011-05-17 Xicato, Inc. Solid state illumination device
DE102007028120A1 (de) 2007-06-19 2008-12-24 Osram Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Chlorosilikat-Leuchtstoffs und damit hergestellter Leuchtstoff
JP4925119B2 (ja) * 2007-06-21 2012-04-25 シャープ株式会社 酸化物蛍光体および発光装置
US8556430B2 (en) 2007-06-27 2013-10-15 Prysm, Inc. Servo feedback control based on designated scanning servo beam in scanning beam display systems with light-emitting screens
US7878657B2 (en) 2007-06-27 2011-02-01 Prysm, Inc. Servo feedback control based on invisible scanning servo beam in scanning beam display systems with light-emitting screens
TWI365546B (en) * 2007-06-29 2012-06-01 Ind Tech Res Inst Light emitting diode device and fabrication method thereof
CN101688115B (zh) 2007-07-09 2013-03-27 夏普株式会社 荧光体粒子组以及使用其的发光装置
US7924478B2 (en) * 2007-07-11 2011-04-12 Samsung Electronics Co., Ltd. Scanner module and image scanning apparatus employing the same
KR101279034B1 (ko) * 2007-07-11 2013-07-02 삼성전자주식회사 스캐너 모듈 및 이를 채용한 화상독취장치
US7852523B2 (en) * 2007-07-11 2010-12-14 Samsung Electronics Co., Ltd. Scanner module and image scanning apparatus employing the same
US10505083B2 (en) * 2007-07-11 2019-12-10 Cree, Inc. Coating method utilizing phosphor containment structure and devices fabricated using same
EP2015614B1 (en) 2007-07-12 2010-12-15 Koito Manufacturing Co., Ltd. Light emitting device
US7847309B2 (en) * 2007-07-16 2010-12-07 GE Lighting Solutions, LLC Red line emitting complex fluoride phosphors activated with Mn4+
CN101743488B (zh) 2007-07-17 2014-02-26 科锐公司 具有内部光学特性结构的光学元件及其制造方法
WO2009014707A2 (en) 2007-07-23 2009-01-29 Qd Vision, Inc. Quantum dot light enhancement substrate and lighting device including same
TWI384052B (zh) * 2007-07-25 2013-02-01 Univ Nat Chiao Tung 新穎螢光體與其製造方法
TWI363085B (en) * 2007-07-26 2012-05-01 Univ Nat Chiao Tung A novel phosphor and fabrication of the same
DE102007036226A1 (de) * 2007-08-02 2009-02-05 Perkinelmer Elcos Gmbh Anbringungsstruktur für LEDs, LED-Baugruppe, LED-Baugruppensockel, Verfahren zum Ausbilden einer Anbringungsstruktur
US8098375B2 (en) 2007-08-06 2012-01-17 Lumencor, Inc. Light emitting diode illumination system
US7863635B2 (en) * 2007-08-07 2011-01-04 Cree, Inc. Semiconductor light emitting devices with applied wavelength conversion materials
US7652301B2 (en) * 2007-08-16 2010-01-26 Philips Lumileds Lighting Company, Llc Optical element coupled to low profile side emitting LED
WO2009025469A2 (en) 2007-08-22 2009-02-26 Seoul Semiconductor Co., Ltd. Non stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same
US8704265B2 (en) * 2007-08-27 2014-04-22 Lg Electronics Inc. Light emitting device package and lighting apparatus using the same
US8128249B2 (en) 2007-08-28 2012-03-06 Qd Vision, Inc. Apparatus for selectively backlighting a material
KR101055769B1 (ko) 2007-08-28 2011-08-11 서울반도체 주식회사 비화학양론적 정방정계 알칼리 토류 실리케이트 형광체를채택한 발광 장치
US7791093B2 (en) * 2007-09-04 2010-09-07 Koninklijke Philips Electronics N.V. LED with particles in encapsulant for increased light extraction and non-yellow off-state color
US8866185B2 (en) * 2007-09-06 2014-10-21 SemiLEDs Optoelectronics Co., Ltd. White light LED with multiple encapsulation layers
US7851990B2 (en) * 2007-09-06 2010-12-14 He Shan Lide Electronic Enterprise Company Ltd. Method for generating low color temperature light and light emitting device adopting the same
US8133529B2 (en) 2007-09-10 2012-03-13 Enpirion, Inc. Method of forming a micromagnetic device
US7955868B2 (en) 2007-09-10 2011-06-07 Enpirion, Inc. Method of forming a micromagnetic device
US8018315B2 (en) 2007-09-10 2011-09-13 Enpirion, Inc. Power converter employing a micromagnetic device
US7920042B2 (en) 2007-09-10 2011-04-05 Enpirion, Inc. Micromagnetic device and method of forming the same
DE102007049005A1 (de) * 2007-09-11 2009-03-12 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
DE202007019100U1 (de) * 2007-09-12 2010-09-02 Lumitech Produktion Und Entwicklung Gmbh LED-Modul, LED-Leuchtmittel und LED-Leuchte für die energieeffiziente Wiedergabe von weißem Licht
US8519437B2 (en) 2007-09-14 2013-08-27 Cree, Inc. Polarization doping in nitride based diodes
DE102007053286A1 (de) 2007-09-20 2009-04-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
JP5075552B2 (ja) * 2007-09-25 2012-11-21 株式会社東芝 蛍光体およびそれを用いたｌｅｄランプ
JP2009081379A (ja) 2007-09-27 2009-04-16 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子
KR100891020B1 (ko) * 2007-09-28 2009-03-31 한국과학기술원 새로운 조성의 황색 발광 Ｃｅ3+부활 칼슘 실리케이트 황색형광체 및 그 제조방법
US20090117672A1 (en) 2007-10-01 2009-05-07 Intematix Corporation Light emitting devices with phosphor wavelength conversion and methods of fabrication thereof
US8883528B2 (en) * 2007-10-01 2014-11-11 Intematix Corporation Methods of producing light emitting device with phosphor wavelength conversion
US11317495B2 (en) 2007-10-06 2022-04-26 Lynk Labs, Inc. LED circuits and assemblies
US11297705B2 (en) 2007-10-06 2022-04-05 Lynk Labs, Inc. Multi-voltage and multi-brightness LED lighting devices and methods of using same
WO2009049019A1 (en) * 2007-10-10 2009-04-16 Cree Led Lighting Solutions, Inc. Lighting device and method of making
US9012937B2 (en) * 2007-10-10 2015-04-21 Cree, Inc. Multiple conversion material light emitting diode package and method of fabricating same
CN100546058C (zh) * 2007-10-15 2009-09-30 佛山市国星光电股份有限公司 功率发光二极管封装结构
US7984999B2 (en) * 2007-10-17 2011-07-26 Xicato, Inc. Illumination device with light emitting diodes and moveable light adjustment member
US9086213B2 (en) 2007-10-17 2015-07-21 Xicato, Inc. Illumination device with light emitting diodes
US7915627B2 (en) * 2007-10-17 2011-03-29 Intematix Corporation Light emitting device with phosphor wavelength conversion
KR101294849B1 (ko) * 2007-10-23 2013-08-08 엘지디스플레이 주식회사 백라이트 어셈블리
US8866169B2 (en) 2007-10-31 2014-10-21 Cree, Inc. LED package with increased feature sizes
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
US8018139B2 (en) * 2007-11-05 2011-09-13 Enertron, Inc. Light source and method of controlling light spectrum of an LED light engine
US8119028B2 (en) * 2007-11-14 2012-02-21 Cree, Inc. Cerium and europium doped single crystal phosphors
TWI334047B (en) * 2007-11-22 2010-12-01 Au Optronics Corp Liquid crystal display
DE102007056562A1 (de) 2007-11-23 2009-05-28 Oerlikon Textile Gmbh & Co. Kg Vorrichtung zur optischen Detektion von Verunreinigungen in längsbewegtem Garn
JP5558665B2 (ja) * 2007-11-27 2014-07-23 パナソニック株式会社 発光装置
JP2009130301A (ja) * 2007-11-27 2009-06-11 Sharp Corp 発光素子および発光素子の製造方法
KR100998233B1 (ko) * 2007-12-03 2010-12-07 서울반도체 주식회사 슬림형 ｌｅｄ 패키지
CN101453804B (zh) * 2007-12-05 2010-04-07 亿镫光电科技股份有限公司 白光发光装置
TWI336015B (en) * 2007-12-06 2011-01-11 Au Optronics Corp Liquid crystal display
JP5330263B2 (ja) 2007-12-07 2013-10-30 株式会社東芝 蛍光体およびそれを用いたｌｅｄ発光装置
US8230575B2 (en) 2007-12-12 2012-07-31 Innotec Corporation Overmolded circuit board and method
US8167674B2 (en) 2007-12-14 2012-05-01 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US9431589B2 (en) * 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US8172447B2 (en) 2007-12-19 2012-05-08 Oree, Inc. Discrete lighting elements and planar assembly thereof
US20090159915A1 (en) * 2007-12-19 2009-06-25 Shaul Branchevsky Led insert module and multi-layer lens
US8182128B2 (en) * 2007-12-19 2012-05-22 Oree, Inc. Planar white illumination apparatus
US8118447B2 (en) 2007-12-20 2012-02-21 Altair Engineering, Inc. LED lighting apparatus with swivel connection
JP5003464B2 (ja) * 2007-12-21 2012-08-15 三菱電機株式会社 光伝送モジュール
JP2009153712A (ja) 2007-12-26 2009-07-16 Olympus Corp 光源装置およびそれを備えた内視鏡装置
US7815339B2 (en) 2008-01-09 2010-10-19 Innotec Corporation Light module
US8878219B2 (en) 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
CN101482247A (zh) * 2008-01-11 2009-07-15 富士迈半导体精密工业（上海）有限公司 照明装置
US8940561B2 (en) * 2008-01-15 2015-01-27 Cree, Inc. Systems and methods for application of optical materials to optical elements
US8058088B2 (en) * 2008-01-15 2011-11-15 Cree, Inc. Phosphor coating systems and methods for light emitting structures and packaged light emitting diodes including phosphor coating
US20090309114A1 (en) * 2008-01-16 2009-12-17 Luminus Devices, Inc. Wavelength converting light-emitting devices and methods of making the same
US8337029B2 (en) * 2008-01-17 2012-12-25 Intematix Corporation Light emitting device with phosphor wavelength conversion
US20090185113A1 (en) * 2008-01-22 2009-07-23 Industrial Technology Research Institute Color Filter Module and Device of Having the Same
CN101493216B (zh) * 2008-01-24 2011-11-09 富士迈半导体精密工业（上海）有限公司 发光二极管光源模组
US9151884B2 (en) * 2008-02-01 2015-10-06 3M Innovative Properties Company Fluorescent volume light source with active chromphore
WO2009100358A1 (en) 2008-02-08 2009-08-13 Illumitex, Inc. System and method for emitter layer shaping
US8299487B2 (en) 2008-02-18 2012-10-30 Koito Manufacturing Co., Ltd. White light emitting device and vehicle lamp using the same
EP2247891B1 (en) * 2008-02-21 2019-06-05 Signify Holding B.V. Gls-alike led light source
CN101953230B (zh) 2008-02-21 2013-03-27 日东电工株式会社 具有半透明陶瓷板的发光装置
CN101514801A (zh) * 2008-02-22 2009-08-26 富士迈半导体精密工业（上海）有限公司 照明装置
US8163203B2 (en) 2008-02-27 2012-04-24 The Regents Of The University Of California Yellow emitting phosphors based on Ce3+-doped aluminate and via solid solution for solid-state lighting applications
JP2009206459A (ja) * 2008-02-29 2009-09-10 Sharp Corp 色変換部材およびそれを用いた発光装置
EP2260341A2 (en) * 2008-03-05 2010-12-15 Oree, Advanced Illumination Solutions INC. Illumination apparatus and methods of forming the same
US8637883B2 (en) 2008-03-19 2014-01-28 Cree, Inc. Low index spacer layer in LED devices
KR101995369B1 (ko) 2008-04-03 2019-07-02 삼성 리서치 아메리카 인코포레이티드 양자점들을 포함하는 발광 소자
TWI521266B (zh) * 2008-04-03 2016-02-11 友達光電股份有限公司 液晶顯示器
US9525148B2 (en) 2008-04-03 2016-12-20 Qd Vision, Inc. Device including quantum dots
US8692532B2 (en) 2008-04-16 2014-04-08 Enpirion, Inc. Power converter with controller operable in selected modes of operation
US9246390B2 (en) 2008-04-16 2016-01-26 Enpirion, Inc. Power converter with controller operable in selected modes of operation
US8541991B2 (en) 2008-04-16 2013-09-24 Enpirion, Inc. Power converter with controller operable in selected modes of operation
US8686698B2 (en) 2008-04-16 2014-04-01 Enpirion, Inc. Power converter with controller operable in selected modes of operation
JP2011519159A (ja) * 2008-04-23 2011-06-30 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 発光装置
DE102009018603B9 (de) 2008-04-25 2021-01-14 Samsung Electronics Co., Ltd. Leuchtvorrichtung und Herstellungsverfahren derselben
US20090268461A1 (en) * 2008-04-28 2009-10-29 Deak David G Photon energy conversion structure
DE102008021438A1 (de) 2008-04-29 2009-12-31 Schott Ag Konversionsmaterial insbesondere für eine, eine Halbleiterlichtquelle umfassende weiße oder farbige Lichtquelle, Verfahren zu dessen Herstellung sowie dieses Konversionsmaterial umfassende Lichtquelle
DE202008005987U1 (de) * 2008-04-30 2009-09-03 Ledon Lighting Jennersdorf Gmbh LED-Modul mit kalottenförmiger Farbkonversionsschicht
DE102008021658A1 (de) 2008-04-30 2009-11-05 Ledon Lighting Jennersdorf Gmbh Lichtemittierende Vorrichtung mit Volumenstrukturierung
US9287469B2 (en) 2008-05-02 2016-03-15 Cree, Inc. Encapsulation for phosphor-converted white light emitting diode
WO2009137053A1 (en) 2008-05-06 2009-11-12 Qd Vision, Inc. Optical components, systems including an optical component, and devices
US9207385B2 (en) 2008-05-06 2015-12-08 Qd Vision, Inc. Lighting systems and devices including same
JP2011524064A (ja) 2008-05-06 2011-08-25 キユーデイー・ビジヨン・インコーポレーテツド 量子閉じ込め半導体ナノ粒子を含有する固体照明装置
DE102008022888A1 (de) * 2008-05-08 2009-11-19 Lok-F Gmbh Leuchtvorrichtung
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
JP2009277887A (ja) * 2008-05-15 2009-11-26 Shin Etsu Chem Co Ltd 発光装置
WO2009143283A1 (en) * 2008-05-20 2009-11-26 Lightscape Materials, Inc. Silicate-based phosphors and led lighting devices using the same
JP2010526425A (ja) * 2008-05-20 2010-07-29 パナソニック株式会社 半導体発光装置、並びに、これを用いた光源装置及び照明システム
US8360599B2 (en) 2008-05-23 2013-01-29 Ilumisys, Inc. Electric shock resistant L.E.D. based light
US8461613B2 (en) 2008-05-27 2013-06-11 Interlight Optotech Corporation Light emitting device
DE102008025318A1 (de) * 2008-05-27 2009-12-10 Setrinx S.A.R.L. Leuchtchip und Leuchtvorrichtung mit einem solchen
US7868340B2 (en) 2008-05-30 2011-01-11 Bridgelux, Inc. Method and apparatus for generating white light from solid state light emitting devices
US8097081B2 (en) 2008-06-05 2012-01-17 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8871024B2 (en) * 2008-06-05 2014-10-28 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US20090301388A1 (en) * 2008-06-05 2009-12-10 Soraa Inc. Capsule for high pressure processing and method of use for supercritical fluids
US9157167B1 (en) 2008-06-05 2015-10-13 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US7906766B2 (en) * 2008-06-16 2011-03-15 Northrop Grumman Systems Corporation Systems and methods for simulating a vehicle exhaust plume
KR101448153B1 (ko) * 2008-06-25 2014-10-08 삼성전자주식회사 발광 다이오드용 멀티칩 패키지 및 멀티칩 패키지 방식의발광 다이오드 소자
US20090321758A1 (en) * 2008-06-25 2009-12-31 Wen-Huang Liu Led with improved external light extraction efficiency
US8240875B2 (en) 2008-06-25 2012-08-14 Cree, Inc. Solid state linear array modules for general illumination
US20090320745A1 (en) * 2008-06-25 2009-12-31 Soraa, Inc. Heater device and method for high pressure processing of crystalline materials
EP2304312A4 (en) * 2008-06-25 2015-03-25 Mario W Cardullo UV LIGHT SOURCE FOR GENERATING VISIBLE LIGHT
WO2010005914A1 (en) * 2008-07-07 2010-01-14 Soraa, Inc. High quality large area bulk non-polar or semipolar gallium based substrates and methods
US9404197B2 (en) 2008-07-07 2016-08-02 Soraa, Inc. Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
US8301002B2 (en) 2008-07-10 2012-10-30 Oree, Inc. Slim waveguide coupling apparatus and method
US8297786B2 (en) 2008-07-10 2012-10-30 Oree, Inc. Slim waveguide coupling apparatus and method
JP2010027704A (ja) * 2008-07-16 2010-02-04 Stanley Electric Co Ltd 蛍光体セラミック板を用いた発光装置の製造方法
TW201005075A (en) * 2008-07-24 2010-02-01 Univ Nat Chiao Tung White-emitting phosphors and lighting apparatus thereof
US7869112B2 (en) * 2008-07-25 2011-01-11 Prysm, Inc. Beam scanning based on two-dimensional polygon scanner for display and other applications
US7946729B2 (en) 2008-07-31 2011-05-24 Altair Engineering, Inc. Fluorescent tube replacement having longitudinally oriented LEDs
US8979999B2 (en) * 2008-08-07 2015-03-17 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8430958B2 (en) * 2008-08-07 2013-04-30 Soraa, Inc. Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride
US10036099B2 (en) 2008-08-07 2018-07-31 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US20100033077A1 (en) * 2008-08-08 2010-02-11 Glory Science Co., Ltd. Light emitting device and method of manufacturing the light emitting device
DE102008038249A1 (de) * 2008-08-18 2010-02-25 Osram Gesellschaft mit beschränkter Haftung alpha-Sialon-Leuchtstoff
CN101577301B (zh) * 2008-09-05 2011-12-21 佛山市国星光电股份有限公司 白光led的封装方法及使用该方法制作的led器件
US20120181919A1 (en) * 2008-08-27 2012-07-19 Osram Sylvania Inc. Luminescent Ceramic Composite Converter and Method of Making the Same
US8164710B2 (en) * 2008-09-04 2012-04-24 Seoul Semiconductor Co., Ltd. Backlight assembly and liquid crystal display apparatus having the same
US20100058837A1 (en) * 2008-09-05 2010-03-11 Quest William J Device having multiple light sources and methods of use
US20100060198A1 (en) * 2008-09-05 2010-03-11 Lite-On It Corporation LED Lamp and Method for Producing a LED Lamp
US8143769B2 (en) * 2008-09-08 2012-03-27 Intematix Corporation Light emitting diode (LED) lighting device
GB0816557D0 (en) 2008-09-10 2008-10-15 Merck Patent Gmbh Electro-optical switching element and electro-optical display
US8256924B2 (en) 2008-09-15 2012-09-04 Ilumisys, Inc. LED-based light having rapidly oscillating LEDs
EP2163593A1 (en) 2008-09-15 2010-03-17 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Production of nitride-based phosphors
US8342712B2 (en) 2008-09-30 2013-01-01 Disney Enterprises, Inc. Kinetic flame device
US9054086B2 (en) 2008-10-02 2015-06-09 Enpirion, Inc. Module having a stacked passive element and method of forming the same
US8153473B2 (en) 2008-10-02 2012-04-10 Empirion, Inc. Module having a stacked passive element and method of forming the same
US8266793B2 (en) 2008-10-02 2012-09-18 Enpirion, Inc. Module having a stacked magnetic device and semiconductor device and method of forming the same
US8339802B2 (en) 2008-10-02 2012-12-25 Enpirion, Inc. Module having a stacked magnetic device and semiconductor device and method of forming the same
DE102008051256B4 (de) * 2008-10-10 2018-05-24 Ivoclar Vivadent Ag Halbleiter-Strahlungsquelle
US8075165B2 (en) 2008-10-14 2011-12-13 Ledengin, Inc. Total internal reflection lens and mechanical retention and locating device
US20100098377A1 (en) * 2008-10-16 2010-04-22 Noam Meir Light confinement using diffusers
JPWO2010044239A1 (ja) 2008-10-17 2012-03-15 株式会社小糸製作所 発光モジュール、発光モジュールの製造方法、および灯具ユニット
US8444292B2 (en) 2008-10-24 2013-05-21 Ilumisys, Inc. End cap substitute for LED-based tube replacement light
US8901823B2 (en) 2008-10-24 2014-12-02 Ilumisys, Inc. Light and light sensor
US7938562B2 (en) 2008-10-24 2011-05-10 Altair Engineering, Inc. Lighting including integral communication apparatus
US8324817B2 (en) 2008-10-24 2012-12-04 Ilumisys, Inc. Light and light sensor
US8653984B2 (en) 2008-10-24 2014-02-18 Ilumisys, Inc. Integration of LED lighting control with emergency notification systems
US8214084B2 (en) 2008-10-24 2012-07-03 Ilumisys, Inc. Integration of LED lighting with building controls
US8022631B2 (en) * 2008-11-03 2011-09-20 General Electric Company Color control of light sources employing phosphors
US20100109025A1 (en) * 2008-11-05 2010-05-06 Koninklijke Philips Electronics N.V. Over the mold phosphor lens for an led
US20100117106A1 (en) * 2008-11-07 2010-05-13 Ledengin, Inc. Led with light-conversion layer
JP4868427B2 (ja) * 2008-11-13 2012-02-01 国立大学法人名古屋大学 半導体発光装置
JP2010116522A (ja) * 2008-11-14 2010-05-27 Mitsubishi Plastics Inc 蓄光フィルム及び発光装置
TWI384591B (zh) * 2008-11-17 2013-02-01 Everlight Electronics Co Ltd 發光二極體電路板
US9052416B2 (en) 2008-11-18 2015-06-09 Cree, Inc. Ultra-high efficacy semiconductor light emitting devices
US8853712B2 (en) 2008-11-18 2014-10-07 Cree, Inc. High efficacy semiconductor light emitting devices employing remote phosphor configurations
US8004172B2 (en) 2008-11-18 2011-08-23 Cree, Inc. Semiconductor light emitting apparatus including elongated hollow wavelength conversion tubes and methods of assembling same
US8220971B2 (en) 2008-11-21 2012-07-17 Xicato, Inc. Light emitting diode module with three part color matching
US8456082B2 (en) 2008-12-01 2013-06-04 Ifire Ip Corporation Surface-emission light source with uniform illumination
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
US8987156B2 (en) 2008-12-12 2015-03-24 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US9589792B2 (en) 2012-11-26 2017-03-07 Soraa, Inc. High quality group-III metal nitride crystals, methods of making, and methods of use
US8878230B2 (en) * 2010-03-11 2014-11-04 Soraa, Inc. Semi-insulating group III metal nitride and method of manufacture
US9543392B1 (en) 2008-12-12 2017-01-10 Soraa, Inc. Transparent group III metal nitride and method of manufacture
US20100147210A1 (en) * 2008-12-12 2010-06-17 Soraa, Inc. high pressure apparatus and method for nitride crystal growth
USRE47114E1 (en) 2008-12-12 2018-11-06 Slt Technologies, Inc. Polycrystalline group III metal nitride with getter and method of making
US7834372B2 (en) * 2008-12-16 2010-11-16 Jinhui Zhai High luminous flux warm white solid state lighting device
US8507300B2 (en) * 2008-12-24 2013-08-13 Ledengin, Inc. Light-emitting diode with light-conversion layer
JP2010171379A (ja) * 2008-12-25 2010-08-05 Seiko Instruments Inc 発光デバイス
KR101493708B1 (ko) * 2008-12-26 2015-02-16 삼성전자주식회사 백색 발광 장치
US8698463B2 (en) 2008-12-29 2014-04-15 Enpirion, Inc. Power converter with a dynamically configurable controller based on a power conversion mode
US9548714B2 (en) 2008-12-29 2017-01-17 Altera Corporation Power converter with a dynamically configurable controller and output filter
US8390193B2 (en) 2008-12-31 2013-03-05 Intematix Corporation Light emitting device with phosphor wavelength conversion
US8556452B2 (en) 2009-01-15 2013-10-15 Ilumisys, Inc. LED lens
US8362710B2 (en) 2009-01-21 2013-01-29 Ilumisys, Inc. Direct AC-to-DC converter for passive component minimization and universal operation of LED arrays
US8664880B2 (en) 2009-01-21 2014-03-04 Ilumisys, Inc. Ballast/line detection circuit for fluorescent replacement lamps
US20100181582A1 (en) * 2009-01-22 2010-07-22 Intematix Corporation Light emitting devices with phosphor wavelength conversion and methods of manufacture thereof
TWI449996B (zh) * 2009-01-23 2014-08-21 Au Optronics Corp 高色彩飽合度之顯示裝置及其使用之色彩調整方法
US8242462B2 (en) 2009-01-23 2012-08-14 Lumencor, Inc. Lighting design of high quality biomedical devices
JP2010171342A (ja) * 2009-01-26 2010-08-05 Sony Corp 色変換部材およびその製造方法、発光装置、表示装置
US20110100291A1 (en) * 2009-01-29 2011-05-05 Soraa, Inc. Plant and method for large-scale ammonothermal manufacturing of gallium nitride boules
JP2010177620A (ja) * 2009-02-02 2010-08-12 Showa Denko Kk 発光装置の製造方法
WO2010088658A1 (en) * 2009-02-02 2010-08-05 Ringdale, Inc. Phosphor composite coated diffuser device and method
US20100208470A1 (en) * 2009-02-10 2010-08-19 Yosi Shani Overlapping illumination surfaces with reduced linear artifacts
KR101077264B1 (ko) * 2009-02-17 2011-10-27 (주)포인트엔지니어링 광소자용 기판, 이를 갖는 광소자 패키지 및 이의 제조 방법
US8123981B2 (en) * 2009-02-19 2012-02-28 Nitto Denko Corporation Method of fabricating translucent phosphor ceramics
US8137587B2 (en) 2009-02-19 2012-03-20 Nitto Denko Corporation Method of manufacturing phosphor translucent ceramics and light emitting devices
JP2012518698A (ja) * 2009-02-25 2012-08-16 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Ｕｖ光を発する放電ランプ
US8686455B2 (en) 2009-03-03 2014-04-01 Ube Industries, Ltd. Composite substrate for formation of light-emitting device, light-emitting diode device and manufacturing method thereof
US8541931B2 (en) * 2009-03-17 2013-09-24 Intematix Corporation LED based lamp including reflective hood to reduce variation in illuminance
TWM374153U (en) * 2009-03-19 2010-02-11 Intematix Technology Ct Corp Light emitting device applied to AC drive
TWI405838B (zh) * 2009-03-27 2013-08-21 Chunghwa Picture Tubes Ltd 紅光螢光材料及其製造方法、及白光發光裝置
US8624527B1 (en) 2009-03-27 2014-01-07 Oree, Inc. Independently controllable illumination device
KR100984126B1 (ko) 2009-03-30 2010-09-28 서울대학교산학협력단 발광소자 코팅 방법, 광커플러 및 광커플러 제조 방법
TW201037059A (en) * 2009-04-01 2010-10-16 Chunghwa Picture Tubes Ltd Red light fluorescent material and manufacturing method thereof, and white light luminescent device
US9000664B2 (en) * 2009-04-06 2015-04-07 Sharp Kabushiki Kaisha Phosphor particle group, light emitting apparatus using the same, and liquid crystal display television
US8598793B2 (en) 2011-05-12 2013-12-03 Ledengin, Inc. Tuning of emitter with multiple LEDs to a single color bin
US7985000B2 (en) * 2009-04-08 2011-07-26 Ledengin, Inc. Lighting apparatus having multiple light-emitting diodes with individual light-conversion layers
US8384097B2 (en) 2009-04-08 2013-02-26 Ledengin, Inc. Package for multiple light emitting diodes
CN102414850B (zh) * 2009-04-21 2014-07-09 皇家飞利浦电子股份有限公司 具有磷光体的照明装置
US8192048B2 (en) * 2009-04-22 2012-06-05 3M Innovative Properties Company Lighting assemblies and systems
KR101004713B1 (ko) * 2009-04-22 2011-01-04 주식회사 에피밸리 디스플레이의 디밍 제어방법
KR101753740B1 (ko) 2009-04-28 2017-07-04 삼성전자주식회사 광학 재료, 광학 부품 및 방법
DE102009020569B4 (de) 2009-05-08 2019-02-21 Schott Ag Leuchtstoffe auf Basis Eu2+-(co-) dotierter Yttrium-Aluminium-Granat-Kristalle und deren Verwendung
WO2010132517A2 (en) * 2009-05-12 2010-11-18 David Gershaw Led retrofit for miniature bulbs
US8328406B2 (en) 2009-05-13 2012-12-11 Oree, Inc. Low-profile illumination device
US8330381B2 (en) 2009-05-14 2012-12-11 Ilumisys, Inc. Electronic circuit for DC conversion of fluorescent lighting ballast
US8227276B2 (en) * 2009-05-19 2012-07-24 Intematix Corporation Manufacture of light emitting devices with phosphor wavelength conversion
US8227269B2 (en) * 2009-05-19 2012-07-24 Intematix Corporation Manufacture of light emitting devices with phosphor wavelength conversion
US8597963B2 (en) * 2009-05-19 2013-12-03 Intematix Corporation Manufacture of light emitting devices with phosphor wavelength conversion
US8440500B2 (en) * 2009-05-20 2013-05-14 Interlight Optotech Corporation Light emitting device
US9250044B1 (en) 2009-05-29 2016-02-02 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser diode dazzling devices and methods of use
US8509275B1 (en) 2009-05-29 2013-08-13 Soraa, Inc. Gallium nitride based laser dazzling device and method
US9800017B1 (en) 2009-05-29 2017-10-24 Soraa Laser Diode, Inc. Laser device and method for a vehicle
KR101800345B1 (ko) * 2009-06-01 2017-11-22 닛토덴코 가부시키가이샤 발광 세라믹 및 이를 이용한 발광 디바이스
WO2010141235A1 (en) * 2009-06-01 2010-12-09 Nitto Denko Corporation Light-emitting divice comprising a dome-shaped ceramic phosphor
US8299695B2 (en) 2009-06-02 2012-10-30 Ilumisys, Inc. Screw-in LED bulb comprising a base having outwardly projecting nodes
US8921876B2 (en) 2009-06-02 2014-12-30 Cree, Inc. Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements
WO2010148109A1 (en) 2009-06-16 2010-12-23 The Regents Of The University Of California Oxyfluoride phosphors and white light emitting diodes including the oxyfluoride phosphor for solid-state lighting applications
US8651692B2 (en) * 2009-06-18 2014-02-18 Intematix Corporation LED based lamp and light emitting signage
US8426871B2 (en) * 2009-06-19 2013-04-23 Honeywell International Inc. Phosphor converting IR LEDs
EP2446715A4 (en) 2009-06-23 2013-09-11 Ilumisys Inc LIGHTING DEVICE COMPRISING LEDS AND CUTTING POWER SUPPLY CONTROL SYSTEM
US8727597B2 (en) 2009-06-24 2014-05-20 Oree, Inc. Illumination apparatus with high conversion efficiency and methods of forming the same
DE102009030205A1 (de) * 2009-06-24 2010-12-30 Litec-Lp Gmbh Leuchtstoffe mit Eu(II)-dotierten silikatischen Luminophore
KR101055762B1 (ko) * 2009-09-01 2011-08-11 서울반도체 주식회사 옥시오소실리케이트 발광체를 갖는 발광 물질을 채택한 발광 장치
WO2010151600A1 (en) 2009-06-27 2010-12-29 Michael Tischler High efficiency leds and led lamps
US8415692B2 (en) 2009-07-06 2013-04-09 Cree, Inc. LED packages with scattering particle regions
CN102473803B (zh) 2009-07-28 2014-09-10 A·V·维什尼科夫 用于固体白光源的无机发光材料
JP5444919B2 (ja) * 2009-07-29 2014-03-19 ソニー株式会社 照明装置、及び液晶表示装置
DE102009035100A1 (de) * 2009-07-29 2011-02-03 Osram Opto Semiconductors Gmbh Leuchtdiode und Konversionselement für eine Leuchtdiode
JP2009260390A (ja) * 2009-08-05 2009-11-05 Osram-Melco Ltd 可変色発光ダイオード素子
KR101172143B1 (ko) * 2009-08-10 2012-08-07 엘지이노텍 주식회사 백색 발광다이오드 소자용 시온계 산화질화물 형광체, 그의 제조방법 및 그를 이용한 백색 ｌｅｄ 소자
DE102009037186A1 (de) * 2009-08-12 2011-02-17 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauteil
US8197105B2 (en) * 2009-08-13 2012-06-12 Intematix Corporation LED-based lamps
WO2011020098A1 (en) 2009-08-14 2011-02-17 Qd Vision, Inc. Lighting devices, an optical component for a lighting device, and methods
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
JP5406639B2 (ja) * 2009-08-31 2014-02-05 カシオ計算機株式会社 光源装置及びプロジェクタ
JP5406638B2 (ja) * 2009-08-31 2014-02-05 カシオ計算機株式会社 光源装置及びプロジェクタ
US9909058B2 (en) * 2009-09-02 2018-03-06 Lg Innotek Co., Ltd. Phosphor, phosphor manufacturing method, and white light emitting device
KR101163902B1 (ko) 2010-08-10 2012-07-09 엘지이노텍 주식회사 발광 소자
TWI385782B (zh) * 2009-09-10 2013-02-11 Lextar Electronics Corp 白光發光元件
WO2011037877A1 (en) 2009-09-25 2011-03-31 Cree, Inc. Lighting device with low glare and high light level uniformity
US7977641B2 (en) * 2009-09-29 2011-07-12 General Electric Company Scintillator, associated detecting device and method
US8593040B2 (en) 2009-10-02 2013-11-26 Ge Lighting Solutions Llc LED lamp with surface area enhancing fins
US9175418B2 (en) 2009-10-09 2015-11-03 Soraa, Inc. Method for synthesis of high quality large area bulk gallium based crystals
DE102009049056A1 (de) 2009-10-12 2011-04-14 Osram Gesellschaft mit beschränkter Haftung Verfahren zur Beschichtung eines Silikat-Leuchtstoffs
TWI403005B (zh) * 2009-10-12 2013-07-21 Intematix Technology Ct Corp 發光二極體及其製作方法
US8089086B2 (en) * 2009-10-19 2012-01-03 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Light source
US20110090669A1 (en) * 2009-10-20 2011-04-21 Tsung-Ting Sun Led lighting device and light source module for the same
US8440104B2 (en) * 2009-10-21 2013-05-14 General Electric Company Kimzeyite garnet phosphors
US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
CN101760197B (zh) * 2009-10-27 2013-08-07 上海祥羚光电科技发展有限公司 一种白光led用黄色荧光粉及其制备方法
US8535565B2 (en) 2009-10-30 2013-09-17 The Regents Of The University Of California Solid solution phosphors based on oxyfluoride and white light emitting diodes including the phosphors for solid state white lighting applications
KR101924080B1 (ko) * 2009-11-11 2018-11-30 삼성 리서치 아메리카 인코포레이티드 양자점을 포함하는 디바이스
KR101020998B1 (ko) * 2009-11-12 2011-03-09 엘지이노텍 주식회사 발광소자 및 그 제조방법
JP4888853B2 (ja) 2009-11-12 2012-02-29 学校法人慶應義塾 液晶表示装置の視認性改善方法、及びそれを用いた液晶表示装置
TWI531088B (zh) * 2009-11-13 2016-04-21 首爾偉傲世有限公司 具有分散式布拉格反射器的發光二極體晶片
US8963178B2 (en) 2009-11-13 2015-02-24 Seoul Viosys Co., Ltd. Light emitting diode chip having distributed bragg reflector and method of fabricating the same
US8779685B2 (en) 2009-11-19 2014-07-15 Intematix Corporation High CRI white light emitting devices and drive circuitry
JP5565793B2 (ja) * 2009-12-08 2014-08-06 学校法人立命館 深紫外発光素子及びその製造方法
EP2511590A4 (en) * 2009-12-08 2014-03-26 Sharp Kk LIGHTING DEVICE, DISPLAY DEVICE, AND TELEVISION RECEPTION DEVICE
US8466611B2 (en) 2009-12-14 2013-06-18 Cree, Inc. Lighting device with shaped remote phosphor
US8536615B1 (en) 2009-12-16 2013-09-17 Cree, Inc. Semiconductor device structures with modulated and delta doping and related methods
US8604461B2 (en) 2009-12-16 2013-12-10 Cree, Inc. Semiconductor device structures with modulated doping and related methods
US8303141B2 (en) * 2009-12-17 2012-11-06 Ledengin, Inc. Total internal reflection lens with integrated lamp cover
JP5707697B2 (ja) 2009-12-17 2015-04-30 日亜化学工業株式会社 発光装置
CN101847680A (zh) * 2009-12-21 2010-09-29 深圳市成光兴实业发展有限公司 采用丝网印刷工艺的白光led荧光粉膜层及制作方法
KR101646255B1 (ko) * 2009-12-22 2016-08-05 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법
KR20110076447A (ko) * 2009-12-29 2011-07-06 삼성전자주식회사 발광 장치 및 이를 포함하는 표시 장치
CN101760196B (zh) * 2009-12-29 2012-11-21 四川大学 一种白光led用黄色荧光粉的合成方法
CN101797698B (zh) * 2009-12-30 2012-01-18 马勒三环气门驱动(湖北)有限公司 气门轴向尺寸的控制方法
US9480133B2 (en) 2010-01-04 2016-10-25 Cooledge Lighting Inc. Light-emitting element repair in array-based lighting devices
US8653539B2 (en) 2010-01-04 2014-02-18 Cooledge Lighting, Inc. Failure mitigation in arrays of light-emitting devices
EP2468836A4 (en) 2010-01-08 2014-07-30 Sharp Kk PHOSPHORUS, LIGHT-EMITTING DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE THEREWITH
KR101768010B1 (ko) * 2010-02-04 2017-08-14 닛토덴코 가부시키가이샤 발광 세라믹 적층체 및 이를 제조하는 방법
US9631782B2 (en) * 2010-02-04 2017-04-25 Xicato, Inc. LED-based rectangular illumination device
US20120305973A1 (en) * 2010-02-08 2012-12-06 Yoshihiko Chosa Light-emitting device and surface light source device using the same
KR20110094996A (ko) * 2010-02-18 2011-08-24 엘지이노텍 주식회사 발광소자 패키지, 그 제조방법 및 조명시스템
WO2011105666A1 (ko) * 2010-02-24 2011-09-01 Shim Hyun-Seop 엘이디 색변환용 유브이 코팅 조성물
GB2478287A (en) 2010-03-01 2011-09-07 Merck Patent Gmbh Electro-optical switching element and electro-optical display
US8716038B2 (en) * 2010-03-02 2014-05-06 Micron Technology, Inc. Microelectronic workpiece processing systems and associated methods of color correction
US9275979B2 (en) 2010-03-03 2016-03-01 Cree, Inc. Enhanced color rendering index emitter through phosphor separation
US8632196B2 (en) 2010-03-03 2014-01-21 Cree, Inc. LED lamp incorporating remote phosphor and diffuser with heat dissipation features
JP5769290B2 (ja) * 2010-03-03 2015-08-26 国立研究開発法人産業技術総合研究所 照明装置
US8562161B2 (en) 2010-03-03 2013-10-22 Cree, Inc. LED based pedestal-type lighting structure
US8104908B2 (en) * 2010-03-04 2012-01-31 Xicato, Inc. Efficient LED-based illumination module with high color rendering index
US20110220920A1 (en) * 2010-03-09 2011-09-15 Brian Thomas Collins Methods of forming warm white light emitting devices having high color rendering index values and related light emitting devices
EP2548235B1 (en) * 2010-03-16 2019-05-08 Signify Holding B.V. Lighting apparatus
US8324798B2 (en) * 2010-03-19 2012-12-04 Nitto Denko Corporation Light emitting device using orange-red phosphor with co-dopants
JP5749327B2 (ja) 2010-03-19 2015-07-15 日東電工株式会社 発光装置用ガーネット系蛍光体セラミックシート
KR101666442B1 (ko) * 2010-03-25 2016-10-17 엘지이노텍 주식회사 발광 다이오드 및 이를 포함하는 발광 소자 패키지
WO2011119958A1 (en) 2010-03-26 2011-09-29 Altair Engineering, Inc. Inside-out led bulb
US9057493B2 (en) 2010-03-26 2015-06-16 Ilumisys, Inc. LED light tube with dual sided light distribution
US8541958B2 (en) 2010-03-26 2013-09-24 Ilumisys, Inc. LED light with thermoelectric generator
WO2011122655A1 (ja) * 2010-03-30 2011-10-06 三菱化学株式会社 発光装置
WO2011125422A1 (ja) 2010-03-31 2011-10-13 宇部興産株式会社 光変換用セラミック複合体、その製造方法、及びそれを備えた発光装置
US8322884B2 (en) 2010-03-31 2012-12-04 Abl Ip Holding Llc Solid state lighting with selective matching of index of refraction
WO2011123538A2 (en) 2010-03-31 2011-10-06 Osram Sylvania Inc. Phosphor and leds containing same
US8858022B2 (en) 2011-05-05 2014-10-14 Ledengin, Inc. Spot TIR lens system for small high-power emitter
US9345095B2 (en) 2010-04-08 2016-05-17 Ledengin, Inc. Tunable multi-LED emitter module
US9080729B2 (en) 2010-04-08 2015-07-14 Ledengin, Inc. Multiple-LED emitter for A-19 lamps
US8395312B2 (en) * 2010-04-19 2013-03-12 Bridgelux, Inc. Phosphor converted light source having an additional LED to provide long wavelength light
TWI394827B (zh) * 2010-04-20 2013-05-01 China Glaze Co Ltd 螢光材料與白光發光裝置
TWI374179B (en) * 2010-05-07 2012-10-11 Chi Mei Corp Fluorescent substance and light-emitting device
JP4809508B1 (ja) 2010-05-14 2011-11-09 パナソニック株式会社 Ｌｅｄモジュール、ｌｅｄランプおよび照明装置
JP2011242536A (ja) * 2010-05-17 2011-12-01 Canon Inc 表示装置
WO2011143792A1 (zh) * 2010-05-20 2011-11-24 大连路明发光科技股份有限公司 可剥离型光转换发光膜
US8684559B2 (en) 2010-06-04 2014-04-01 Cree, Inc. Solid state light source emitting warm light with high CRI
US8596821B2 (en) 2010-06-08 2013-12-03 Cree, Inc. LED light bulbs
JP5323131B2 (ja) 2010-06-09 2013-10-23 信越化学工業株式会社 蛍光粒子及び発光ダイオード並びにこれらを用いた照明装置及び液晶パネル用バックライト装置
CN102277164B (zh) * 2010-06-10 2013-11-06 奇美实业股份有限公司 荧光粉体及发光装置
US8807799B2 (en) 2010-06-11 2014-08-19 Intematix Corporation LED-based lamps
US8888318B2 (en) 2010-06-11 2014-11-18 Intematix Corporation LED spotlight
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
JP4962661B2 (ja) 2010-06-22 2012-06-27 東洋紡績株式会社 液晶表示装置、偏光板および偏光子保護フィルム
US9142715B2 (en) 2010-06-24 2015-09-22 Seoul Viosys Co., Ltd. Light emitting diode
US9371973B2 (en) 2010-06-28 2016-06-21 Shenzhen Liown Electronics Company Ltd. Electronic lighting device and method for manufacturing same
KR101372084B1 (ko) 2010-06-29 2014-03-07 쿨레지 라이팅 인크. 항복형 기판을 갖는 전자 장치
US8454193B2 (en) 2010-07-08 2013-06-04 Ilumisys, Inc. Independent modules for LED fluorescent light tube replacement
JP2012019062A (ja) * 2010-07-08 2012-01-26 Shin Etsu Chem Co Ltd 発光半導体装置、実装基板及びそれらの製造方法
US8207663B2 (en) 2010-07-09 2012-06-26 Nitto Denko Corporation Phosphor composition and light emitting device using the same
EP2593714A2 (en) 2010-07-12 2013-05-22 iLumisys, Inc. Circuit board mount for led light tube
CN102782082A (zh) * 2010-07-14 2012-11-14 日本电气硝子株式会社 荧光体复合部件、led器件和荧光体复合部件的制造方法
US8941135B2 (en) 2010-07-15 2015-01-27 Nitto Denko Corporation Light emissive ceramic laminate and method of making same
DE102010031755A1 (de) * 2010-07-21 2012-02-09 Merck Patent Gmbh Aluminat-Leuchtstoffe
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources
CN102339936B (zh) * 2010-07-27 2015-04-29 展晶科技(深圳)有限公司 发光装置封装结构及其制造方法
WO2012015153A2 (en) 2010-07-28 2012-02-02 Seoul Opto Device Co., Ltd. Light emitting diode having distributed bragg reflector
US10451251B2 (en) 2010-08-02 2019-10-22 Ideal Industries Lighting, LLC Solid state lamp with light directing optics and diffuser
EP2610217A4 (en) 2010-08-04 2016-02-24 Ube Industries SILICON NITRIDE SILICON NITRIDE POWDER WITH SILICON NITRIDE, LUMINOPHORE USING SAME, USING THE SAME, USING LUMINOPHORE, USING SAME, LUMINOPHORE EN (Sr, Ca) AlSiN3, LUMINOPHORE LA3Si6N11 USING THE SAME AND METHODS FOR PRODUCING THE SAME LUMINOPHORES
CN102376860A (zh) 2010-08-05 2012-03-14 夏普株式会社 发光装置及其制造方法
US8946998B2 (en) 2010-08-09 2015-02-03 Intematix Corporation LED-based light emitting systems and devices with color compensation
US8852455B2 (en) 2010-08-17 2014-10-07 Intematix Corporation Europium-activated, beta-SiAlON based green phosphors
EP2606275A2 (en) 2010-08-20 2013-06-26 Research Triangle Institute, International Color-tunable lighting devices and methods for tunning color output of lighting devices
US9441811B2 (en) 2010-08-20 2016-09-13 Research Triangle Institute Lighting devices utilizing optical waveguides and remote light converters, and related methods
US9101036B2 (en) 2010-08-20 2015-08-04 Research Triangle Institute Photoluminescent nanofiber composites, methods for fabrication, and related lighting devices
US20120051045A1 (en) 2010-08-27 2012-03-01 Xicato, Inc. Led Based Illumination Module Color Matched To An Arbitrary Light Source
EP2426186B1 (en) 2010-09-03 2016-03-23 Stcube, Inc. Led light converting resin composition and led member using the same
TWI486254B (zh) 2010-09-20 2015-06-01 Nitto Denko Corp 發光陶瓷層板及其製造方法
DE102010041236A1 (de) 2010-09-23 2012-03-29 Osram Ag Optoelektronisches Halbleiterbauelement
US8354784B2 (en) 2010-09-28 2013-01-15 Intematix Corporation Solid-state light emitting devices with photoluminescence wavelength conversion
US8614539B2 (en) 2010-10-05 2013-12-24 Intematix Corporation Wavelength conversion component with scattering particles
US8957585B2 (en) 2010-10-05 2015-02-17 Intermatix Corporation Solid-state light emitting devices with photoluminescence wavelength conversion
JP6069205B2 (ja) 2010-10-05 2017-02-01 インテマティックス・コーポレーションＩｎｔｅｍａｔｉｘ Ｃｏｒｐｏｒａｔｉｏｎ フォトルミネッセンス波長変換を備える発光装置及び波長変換コンポーネント
US8604678B2 (en) 2010-10-05 2013-12-10 Intematix Corporation Wavelength conversion component with a diffusing layer
US9546765B2 (en) 2010-10-05 2017-01-17 Intematix Corporation Diffuser component having scattering particles
US8610341B2 (en) 2010-10-05 2013-12-17 Intematix Corporation Wavelength conversion component
DE102010042217A1 (de) 2010-10-08 2012-04-12 Osram Ag Optoelektronisches Halbleiterbauelement und Verfahren zu seiner Herstellung
US8729559B2 (en) 2010-10-13 2014-05-20 Soraa, Inc. Method of making bulk InGaN substrates and devices thereon
US8846172B2 (en) 2010-10-18 2014-09-30 Nitto Denko Corporation Light emissive ceramic laminate and method of making same
WO2012053924A1 (ru) 2010-10-22 2012-04-26 Vishnyakov Anatoly Vasilyevich Люминесцирующий материал для твердотельных источников белого света
JP6369774B2 (ja) * 2010-10-29 2018-08-08 株式会社光波 発光装置
WO2012058556A2 (en) 2010-10-29 2012-05-03 Altair Engineering, Inc. Mechanisms for reducing risk of shock during installation of light tube
JP5545866B2 (ja) * 2010-11-01 2014-07-09 シチズン電子株式会社 半導体発光装置
US8329484B2 (en) * 2010-11-02 2012-12-11 Tsmc Solid State Lighting Ltd. Phosphor with Ce3+/Ce3+, Li+ doped luminescent materials
CN102456294A (zh) * 2010-11-02 2012-05-16 展晶科技(深圳)有限公司 Led显示装置
DE102010050832A1 (de) * 2010-11-09 2012-05-10 Osram Opto Semiconductors Gmbh Lumineszenzkonversionselement, Verfahren zu dessen Herstellung und optoelektronisches Bauteil mit Lumineszenzkonversionselement
US8651681B2 (en) 2010-11-10 2014-02-18 Osram Sylvania Inc. Luminescent ceramic converter and LED containing same
US20150188002A1 (en) * 2010-11-11 2015-07-02 Auterra, Inc. Light emitting devices having rare earth and transition metal activated phosphors and applications thereof
WO2012066425A2 (en) 2010-11-16 2012-05-24 Saint-Gobain Cristaux Et Detecteurs Scintillation compound including a rare earth element and a process of forming the same
CN102097571A (zh) * 2010-11-16 2011-06-15 深圳市瑞丰光电子股份有限公司 一种黄绿光二极管、背光源、手机及照明指示装置
KR20130122937A (ko) 2010-11-18 2013-11-11 니폰 덴키 가라스 가부시키가이샤 파장 변환 소자 및 그것을 구비하는 광원
KR20120054484A (ko) * 2010-11-19 2012-05-30 엘지이노텍 주식회사 발광 소자 패키지 및 이의 제조방법
TWI460892B (zh) * 2010-11-19 2014-11-11 Advanced Optoelectronic Tech 發光二極體封裝結構
US8343785B2 (en) * 2010-11-30 2013-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Nitridosilicate phosphor tunable light-emitting diodes by using UV and blue chips
CN103097488B (zh) 2010-11-30 2014-09-03 松下电器产业株式会社 荧光体及发光装置
KR101843760B1 (ko) 2010-12-01 2018-05-14 닛토 덴코 가부시키가이샤 도펀트 농도 구배를 갖는 방사성 세라믹 재료들 및 그것을 제조하고 사용하는 방법들
US20120138874A1 (en) 2010-12-02 2012-06-07 Intematix Corporation Solid-state light emitting devices and signage with photoluminescence wavelength conversion and photoluminescent compositions therefor
US8556469B2 (en) 2010-12-06 2013-10-15 Cree, Inc. High efficiency total internal reflection optic for solid state lighting luminaires
US8870415B2 (en) 2010-12-09 2014-10-28 Ilumisys, Inc. LED fluorescent tube replacement light with reduced shock hazard
US9074126B2 (en) 2010-12-16 2015-07-07 Ube Industries, Ltd. Ceramic composite for light conversion
US8867295B2 (en) 2010-12-17 2014-10-21 Enpirion, Inc. Power converter for a memory module
US8772817B2 (en) 2010-12-22 2014-07-08 Cree, Inc. Electronic device submounts including substrates with thermally conductive vias
EP2655961A4 (en) 2010-12-23 2014-09-03 Qd Vision Inc OPTICAL ELEMENT CONTAINING QUANTUM POINTS
KR101340552B1 (ko) * 2010-12-31 2013-12-11 제일모직주식회사 모바일 폰의 모듈 조립 방법
CN102140690B (zh) * 2010-12-31 2013-05-01 陈哲艮 光致发光晶片及其制备方法和应用
US8865022B2 (en) 2011-01-06 2014-10-21 Shin-Etsu Chemical Co., Ltd. Phosphor particles and making method
US9617469B2 (en) 2011-01-06 2017-04-11 Shin-Etsu Chemical Co., Ltd. Phosphor particles, making method, and light-emitting diode
US8354684B2 (en) 2011-01-09 2013-01-15 Bridgelux, Inc. Packaging photon building blocks having only top side connections in an interconnect structure
JP5445473B2 (ja) 2011-01-14 2014-03-19 信越化学工業株式会社 光学材料形成用シリコーン樹脂組成物及び光学材料
US8389957B2 (en) 2011-01-14 2013-03-05 Lumencor, Inc. System and method for metered dosage illumination in a bioanalysis or other system
US8466436B2 (en) 2011-01-14 2013-06-18 Lumencor, Inc. System and method for metered dosage illumination in a bioanalysis or other system
KR101210066B1 (ko) 2011-01-31 2012-12-07 엘지이노텍 주식회사 광 변환 부재 및 이를 포함하는 표시장치
US9508904B2 (en) 2011-01-31 2016-11-29 Cree, Inc. Structures and substrates for mounting optical elements and methods and devices for providing the same background
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
US9234655B2 (en) 2011-02-07 2016-01-12 Cree, Inc. Lamp with remote LED light source and heat dissipating elements
US9068701B2 (en) 2012-01-26 2015-06-30 Cree, Inc. Lamp structure with remote LED light source
US11251164B2 (en) 2011-02-16 2022-02-15 Creeled, Inc. Multi-layer conversion material for down conversion in solid state lighting
JP5654378B2 (ja) * 2011-02-18 2015-01-14 パナソニックＩｐマネジメント株式会社 発光装置
TWI431813B (zh) * 2011-02-24 2014-03-21 Genesis Photonics Inc Light emitting diode components
JP6133791B2 (ja) * 2011-02-24 2017-05-24 日東電工株式会社 蛍光体成分を有する発光複合材
TWM407494U (en) * 2011-02-25 2011-07-11 Unity Opto Technology Co Ltd LED package structure
JP5631509B2 (ja) * 2011-03-01 2014-11-26 オスラム ゲーエムベーハーＯＳＲＡＭ ＧｍｂＨ 蛍光体エレメントを有する照明装置
US8278806B1 (en) 2011-03-02 2012-10-02 Osram Sylvania Inc. LED reflector lamp
JP2012182376A (ja) * 2011-03-02 2012-09-20 Stanley Electric Co Ltd 波長変換部材および光源装置
WO2012125585A1 (en) 2011-03-11 2012-09-20 Intematix Corporation Millisecond decay phosphors for ac led lighting applications
EP3176838B1 (en) 2011-03-15 2019-01-30 Kabushiki Kaisha Toshiba White light source
US9004705B2 (en) 2011-04-13 2015-04-14 Intematix Corporation LED-based light sources for light emitting devices and lighting arrangements with photoluminescence wavelength conversion
KR101337999B1 (ko) * 2011-04-20 2013-12-06 조성매 단일상 형광체를 포함하는 백색 발광 다이오드
CN102563543B (zh) 2011-05-09 2015-01-07 深圳市绎立锐光科技开发有限公司 基于光波长转换产生高亮度单色光的方法及光源
WO2013019299A2 (en) 2011-05-11 2013-02-07 Qd Vision, Inc. Method for processing devices including quantum dots and devices
US8513900B2 (en) 2011-05-12 2013-08-20 Ledengin, Inc. Apparatus for tuning of emitter with multiple LEDs to a single color bin
CN102305370B (zh) * 2011-05-18 2013-04-17 福建华映显示科技有限公司 背光模块及选取暨配置背光模块的发光组件的方法
WO2012157663A1 (ja) * 2011-05-18 2012-11-22 東洋紡株式会社 液晶表示装置、偏光板および偏光子保護フィルム
WO2012157662A1 (ja) * 2011-05-18 2012-11-22 東洋紡株式会社 三次元画像表示対応液晶表示装置に適した偏光板及び液晶表示装置
US8860056B2 (en) 2011-12-01 2014-10-14 Tsmc Solid State Lighting Ltd. Structure and method for LED with phosphor coating
US8747697B2 (en) * 2011-06-07 2014-06-10 Cree, Inc. Gallium-substituted yttrium aluminum garnet phosphor and light emitting devices including the same
TWI467808B (zh) * 2011-06-27 2015-01-01 Delta Electronics Inc 發光二極體元件、其製作方法以及發光裝置
US8663501B2 (en) 2011-06-29 2014-03-04 General Electric Company Green emitting phosphor
JP5588520B2 (ja) 2011-07-04 2014-09-10 パナソニック株式会社 プラズマディスプレイパネル
EP2730637B1 (en) 2011-07-05 2017-06-14 Panasonic Corporation Rare-earth aluminum garnet type fluorescent substance and light-emitting device obtained using same
US8492185B1 (en) 2011-07-14 2013-07-23 Soraa, Inc. Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices
KR20130009020A (ko) 2011-07-14 2013-01-23 엘지이노텍 주식회사 광학 부재, 이를 포함하는 표시장치 및 이의 제조방법
KR101305696B1 (ko) 2011-07-14 2013-09-09 엘지이노텍 주식회사 표시장치 및 광학 부재
KR101893494B1 (ko) 2011-07-18 2018-08-30 엘지이노텍 주식회사 광학 부재 및 이를 포함하는 표시장치
KR101262520B1 (ko) 2011-07-18 2013-05-08 엘지이노텍 주식회사 광학 부재 및 이를 포함하는 표시장치
KR101241549B1 (ko) 2011-07-18 2013-03-11 엘지이노텍 주식회사 광학 부재, 이를 포함하는 표시장치 및 이의 제조방법
KR101294415B1 (ko) 2011-07-20 2013-08-08 엘지이노텍 주식회사 광학 부재 및 이를 포함하는 표시장치
JP5396439B2 (ja) * 2011-07-22 2014-01-22 学校法人慶應義塾 液晶表示装置の視認性改善方法、及びそれを用いた液晶表示装置
JP5559108B2 (ja) * 2011-08-05 2014-07-23 株式会社東芝 半導体発光装置
US20140168965A1 (en) * 2011-08-16 2014-06-19 Samsung Electronics Co., Ltd. Led device having adjustable color temperature
US9072171B2 (en) 2011-08-24 2015-06-30 Ilumisys, Inc. Circuit board mount for LED light
JP5899485B2 (ja) * 2011-08-29 2016-04-06 パナソニックＩｐマネジメント株式会社 樹脂塗布装置および樹脂塗布方法
KR101823930B1 (ko) 2011-08-29 2018-01-31 삼성전자주식회사 발광소자 패키지 어레이 및 발광소자 패키지 제조 방법
CN105357796B (zh) 2011-09-02 2019-02-15 西铁城电子株式会社 照明方法和发光装置
JP5252107B2 (ja) 2011-09-02 2013-07-31 三菱化学株式会社 照明方法及び発光装置
WO2013036062A2 (en) * 2011-09-08 2013-03-14 Lg Innotek Co., Ltd. Lighting module
US8912021B2 (en) 2011-09-12 2014-12-16 SemiLEDs Optoelectronics Co., Ltd. System and method for fabricating light emitting diode (LED) dice with wavelength conversion layers
US8410508B1 (en) 2011-09-12 2013-04-02 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode (LED) package having wavelength conversion member and wafer level fabrication method
US8492746B2 (en) 2011-09-12 2013-07-23 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode (LED) dice having wavelength conversion layers
US8841146B2 (en) 2011-09-12 2014-09-23 SemiLEDs Optoelectronics Co., Ltd. Method and system for fabricating light emitting diode (LED) dice with wavelength conversion layers having controlled color characteristics
DE102011113802A1 (de) 2011-09-20 2013-03-21 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Modul mit einer Mehrzahl von derartigen Bauelementen
US10688527B2 (en) 2011-09-22 2020-06-23 Delta Electronics, Inc. Phosphor device comprising plural phosphor agents for converting waveband light into plural color lights with different wavelength peaks
TWI448806B (zh) 2011-09-22 2014-08-11 Delta Electronics Inc 螢光劑裝置及其所適用之光源系統及投影設備
US10310363B2 (en) 2011-09-22 2019-06-04 Delta Electronics, Inc. Phosphor device with spectrum of converted light comprising at least a color light
JP5690696B2 (ja) 2011-09-28 2015-03-25 富士フイルム株式会社 平版印刷版の製版方法
US20130088848A1 (en) 2011-10-06 2013-04-11 Intematix Corporation Solid-state lamps with improved radial emission and thermal performance
US8992051B2 (en) 2011-10-06 2015-03-31 Intematix Corporation Solid-state lamps with improved radial emission and thermal performance
US9115868B2 (en) 2011-10-13 2015-08-25 Intematix Corporation Wavelength conversion component with improved protective characteristics for remote wavelength conversion
JP6312596B2 (ja) 2011-10-13 2018-04-18 インテマティックス・コーポレーションＩｎｔｅｍａｔｉｘ Ｃｏｒｐｏｒａｔｉｏｎ 固体発光デバイス及びランプのためのフォトルミネセンス波長変換コンポーネント
US9365766B2 (en) 2011-10-13 2016-06-14 Intematix Corporation Wavelength conversion component having photo-luminescence material embedded into a hermetic material for remote wavelength conversion
US9694158B2 (en) 2011-10-21 2017-07-04 Ahmad Mohamad Slim Torque for incrementally advancing a catheter during right heart catheterization
US10029955B1 (en) 2011-10-24 2018-07-24 Slt Technologies, Inc. Capsule for high pressure, high temperature processing of materials and methods of use
CN102495495B (zh) 2011-10-28 2015-03-11 友达光电股份有限公司 具可透视性的显示装置及其使用的影像显示方法
KR101251815B1 (ko) * 2011-11-07 2013-04-09 엘지이노텍 주식회사 광학 시트 및 이를 포함하는 표시장치
US8591072B2 (en) 2011-11-16 2013-11-26 Oree, Inc. Illumination apparatus confining light by total internal reflection and methods of forming the same
US9864121B2 (en) 2011-11-22 2018-01-09 Samsung Electronics Co., Ltd. Stress-resistant component for use with quantum dots
US9247597B2 (en) 2011-12-02 2016-01-26 Lynk Labs, Inc. Color temperature controlled and low THD LED lighting devices and systems and methods of driving the same
EP2607449B1 (en) * 2011-12-22 2014-04-02 Shin-Etsu Chemical Co., Ltd. Preparation of yttrium-cerium-aluminum garnet phosphor
JP5712916B2 (ja) * 2011-12-22 2015-05-07 信越化学工業株式会社 イットリウムセリウムアルミニウムガーネット蛍光体及び発光装置
CN103173217B (zh) * 2011-12-23 2017-03-01 李建立 耐温氮化物荧光材料及含有其的发光装置
US8482104B2 (en) 2012-01-09 2013-07-09 Soraa, Inc. Method for growth of indium-containing nitride films
US9103528B2 (en) 2012-01-20 2015-08-11 Lumencor, Inc Solid state continuous white light source
WO2013112542A1 (en) 2012-01-25 2013-08-01 Intematix Corporation Long decay phosphors for lighting applications
CN104106150A (zh) 2012-02-08 2014-10-15 松下电器产业株式会社 发光装置
KR101419664B1 (ko) 2012-02-08 2014-07-15 파나소닉 주식회사 이트륨알루미늄가넷 타입의 형광체
JP5893429B2 (ja) * 2012-02-21 2016-03-23 スタンレー電気株式会社 メタンガスセンサ用蛍光体、メタンガスセンサ用光源及びメタンガスセンサ
DE102012202927B4 (de) 2012-02-27 2021-06-10 Osram Gmbh Lichtquelle mit led-chip und leuchtstoffschicht
WO2013131002A1 (en) 2012-03-02 2013-09-06 Ilumisys, Inc. Electrical connector header for an led-based light
US11032884B2 (en) 2012-03-02 2021-06-08 Ledengin, Inc. Method for making tunable multi-led emitter module
CN104508082A (zh) 2012-03-06 2015-04-08 日东电工株式会社 用于发光装置的陶瓷体
US9581311B2 (en) * 2012-03-12 2017-02-28 L-3 Communications Corporation Backlight display using photoluminescent material tuned to improve NVIS compatibility
US9068717B2 (en) * 2012-03-12 2015-06-30 L-3 Communications Corporation Backlight display using photoluminescent material tuned to improve NVIS compatibility
US9488359B2 (en) 2012-03-26 2016-11-08 Cree, Inc. Passive phase change radiators for LED lamps and fixtures
US9897284B2 (en) 2012-03-28 2018-02-20 Ledengin, Inc. LED-based MR16 replacement lamp
EP2832816B1 (en) 2012-03-30 2016-01-20 Ube Industries, Ltd. Ceramic complex for light conversion and light-emitting device using same
US9800016B1 (en) 2012-04-05 2017-10-24 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
US10559939B1 (en) 2012-04-05 2020-02-11 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
JP2015121569A (ja) * 2012-04-16 2015-07-02 シャープ株式会社 表示装置
WO2013156112A1 (en) 2012-04-20 2013-10-24 Merck Patent Gmbh Electro-optical switching element and electro-optical display
CN104247058B (zh) 2012-04-26 2017-10-03 英特曼帝克司公司 用于在远程波长转换中实施色彩一致性的方法及设备
US8907809B2 (en) 2012-05-03 2014-12-09 Abl Ip Holding Llc Visual perception and acuity disruption techniques and systems
US9500355B2 (en) 2012-05-04 2016-11-22 GE Lighting Solutions, LLC Lamp with light emitting elements surrounding active cooling device
CN104364346A (zh) 2012-05-07 2015-02-18 帕夫莱·拉多万诺维奇 发光材料及其生产方法
CN103534824B (zh) 2012-05-16 2016-05-25 松下知识产权经营株式会社 波长变换元件及其制造方法和使用波长变换元件的led元件及半导体激光发光装置
WO2013175773A1 (ja) 2012-05-22 2013-11-28 パナソニック株式会社 波長変換素子およびその製造方法ならびに波長変換素子を用いたｌｅｄ素子および半導体レーザ発光装置
JP5304939B1 (ja) * 2012-05-31 2013-10-02 大日本印刷株式会社 光学積層体、偏光板、偏光板の製造方法、画像表示装置、画像表示装置の製造方法及び画像表示装置の視認性改善方法
EP2822045B1 (en) * 2012-05-31 2018-04-11 Panasonic Intellectual Property Management Co., Ltd. Led module, lighting device, and lamp
US10145026B2 (en) 2012-06-04 2018-12-04 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules
US8877561B2 (en) 2012-06-07 2014-11-04 Cooledge Lighting Inc. Methods of fabricating wafer-level flip chip device packages
JP5789564B2 (ja) * 2012-06-11 2015-10-07 学校法人慶應義塾 液晶表示装置の視認性改善方法、及びそれを用いた液晶表示装置
DE112013002944T5 (de) 2012-06-13 2015-02-19 Innotec, Corp. Flexibler Hohllichtleiter
KR20130140462A (ko) 2012-06-14 2013-12-24 삼성디스플레이 주식회사 포토루미네슨스 표시 장치
US9217561B2 (en) 2012-06-15 2015-12-22 Lumencor, Inc. Solid state light source for photocuring
WO2014006501A1 (en) 2012-07-03 2014-01-09 Yosi Shani Planar remote phosphor illumination apparatus
WO2014008463A1 (en) 2012-07-06 2014-01-09 Ilumisys, Inc. Power supply assembly for led-based light tube
US9271367B2 (en) 2012-07-09 2016-02-23 Ilumisys, Inc. System and method for controlling operation of an LED-based light
US8994056B2 (en) 2012-07-13 2015-03-31 Intematix Corporation LED-based large area display
JP2014130998A (ja) * 2012-07-20 2014-07-10 Mitsubishi Chemicals Corp 発光装置、波長変換部材、蛍光体組成物、及び蛍光体混合物
JP2014170895A (ja) * 2013-03-05 2014-09-18 Mitsubishi Chemicals Corp 波長変換部材及びこれを用いた発光装置
WO2014014079A1 (ja) * 2012-07-20 2014-01-23 三菱化学株式会社 発光装置、波長変換部材、蛍光体組成物、及び蛍光体混合物
JP2014019860A (ja) 2012-07-24 2014-02-03 Shin Etsu Chem Co Ltd 蛍光体前駆体の製造方法、蛍光体の製造方法及び波長変換部品
US9275912B1 (en) 2012-08-30 2016-03-01 Soraa, Inc. Method for quantification of extended defects in gallium-containing nitride crystals
JP6126103B2 (ja) 2012-08-31 2017-05-10 シチズン電子株式会社 照明方法及び発光装置
US9299555B1 (en) 2012-09-28 2016-03-29 Soraa, Inc. Ultrapure mineralizers and methods for nitride crystal growth
CN104662069B (zh) 2012-09-28 2016-01-27 夏普株式会社 含荧光体密封材料的制造方法、含荧光体密封材料、发光装置的制造方法以及分配器
RU2533709C2 (ru) * 2012-10-05 2014-11-20 Общество с ограниченной ответственностью "Минерал" Монокристаллический люминофорный материал для светодиодов белого света
EP2733190B1 (en) * 2012-11-16 2020-01-01 LG Innotek Co., Ltd. Phosphor composition and light emitting device package having the same
DE102012220980A1 (de) 2012-11-16 2014-05-22 Osram Gmbh Optoelektronisches halbleiterbauelement
JP6140730B2 (ja) * 2012-12-10 2017-05-31 株式会社エルム 蛍光体層の作成方法
TWM450828U (zh) * 2012-12-14 2013-04-11 Litup Technology Co Ltd 熱電分離的發光二極體模組和相關的散熱載板
US9437788B2 (en) * 2012-12-19 2016-09-06 Cree, Inc. Light emitting diode (LED) component comprising a phosphor with improved excitation properties
CN104918892B (zh) 2012-12-20 2017-03-22 松下知识产权经营株式会社 稀土类铝石榴石型无机氧化物、荧光体以及使用了该荧光体的发光装置
JP6089686B2 (ja) * 2012-12-25 2017-03-08 日亜化学工業株式会社 発光装置
US20140185269A1 (en) 2012-12-28 2014-07-03 Intermatix Corporation Solid-state lamps utilizing photoluminescence wavelength conversion components
US9474116B2 (en) 2013-01-03 2016-10-18 Avago Technologies General Ip (Singapore) Pte. Ltd. Minimized color shift lighting arrangement during dimming
TW201429009A (zh) * 2013-01-11 2014-07-16 Ecocera Optronics Co Ltd 發光二極體裝置及散熱基板的製造方法
TW201428087A (zh) 2013-01-11 2014-07-16 kai-xiong Cai 發光裝置及其耐溫碳化物螢光材料
CN103943759B (zh) 2013-01-21 2018-04-27 圣戈本陶瓷及塑料股份有限公司 包括发光含钆材料的物件及其形成工艺
US9217543B2 (en) 2013-01-28 2015-12-22 Intematix Corporation Solid-state lamps with omnidirectional emission patterns
DE102013100888A1 (de) * 2013-01-29 2014-07-31 Schott Ag Licht-Konzentrator oder -Verteiler
US8754435B1 (en) 2013-02-19 2014-06-17 Cooledge Lighting Inc. Engineered-phosphor LED package and related methods
US8933478B2 (en) 2013-02-19 2015-01-13 Cooledge Lighting Inc. Engineered-phosphor LED packages and related methods
CN106937446B (zh) 2013-03-04 2020-01-07 西铁城电子株式会社 发光装置、照明方法、设计方法、驱动方法、制造方法
CN104968763B (zh) 2013-03-08 2016-12-21 松下知识产权经营株式会社 稀土类铝石榴石型无机氧化物、荧光体以及使用了该荧光体的发光装置
US9754807B2 (en) * 2013-03-12 2017-09-05 Applied Materials, Inc. High density solid state light source array
US9285084B2 (en) 2013-03-14 2016-03-15 Ilumisys, Inc. Diffusers for LED-based lights
US9295855B2 (en) 2013-03-15 2016-03-29 Gary W. Jones Ambient spectrum light conversion device
US9234801B2 (en) 2013-03-15 2016-01-12 Ledengin, Inc. Manufacturing method for LED emitter with high color consistency
WO2014151263A1 (en) * 2013-03-15 2014-09-25 Intematix Corporation Photoluminescence wavelength conversion components
JP5698779B2 (ja) * 2013-03-18 2015-04-08 オリンパス株式会社 光源装置を有する内視鏡装置
JP5698780B2 (ja) * 2013-03-18 2015-04-08 オリンパス株式会社 光源装置およびそれを備えた内視鏡装置
JP5718398B2 (ja) * 2013-03-18 2015-05-13 オリンパス株式会社 内視鏡装置
CZ2013301A3 (cs) 2013-04-22 2014-07-16 Crytur Spol. S R. O. Dioda emitující bílé světlo s monokrystalickým luminoforem a způsob výroby
JP6286026B2 (ja) * 2013-04-25 2018-02-28 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 発光ダイオードコンポーネント
JP6102763B2 (ja) 2013-04-26 2017-03-29 日亜化学工業株式会社 蛍光体及びそれを用いた発光装置並びに蛍光体の製造方法
JP6167913B2 (ja) 2013-04-26 2017-07-26 日亜化学工業株式会社 蛍光体及びそれを用いた発光装置
US8941295B2 (en) 2013-04-29 2015-01-27 Kai-Shon Tsai Fluorescent material and illumination device
US9231168B2 (en) 2013-05-02 2016-01-05 Industrial Technology Research Institute Light emitting diode package structure
JP2013179335A (ja) * 2013-05-08 2013-09-09 Mitsubishi Chemicals Corp 白色発光素子
JPWO2014188847A1 (ja) * 2013-05-21 2017-02-23 セントラル硝子株式会社 広帯域発光材料及び白色光発光材料
WO2014192449A1 (ja) 2013-05-28 2014-12-04 シャープ株式会社 発光装置の製造方法
CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
WO2014203841A1 (ja) * 2013-06-18 2014-12-24 シャープ株式会社 発光装置
KR102098589B1 (ko) 2013-07-04 2020-04-09 삼성전자주식회사 파장변환부재 및 그 제조방법과, 이를 구비한 반도체 발광장치
CN104332539B (zh) 2013-07-22 2017-10-24 中国科学院福建物质结构研究所 GaN基LED外延结构及其制造方法
TW201508207A (zh) * 2013-08-27 2015-03-01 Hon Hai Prec Ind Co Ltd 車燈模組
US9863595B2 (en) 2013-08-28 2018-01-09 Sharp Kabushiki Kaisha Light-emitting unit with optical plate reflecting excitation light and transmitting fluorescent light, and light-emitting device, illumination device, and vehicle headlight including the unit
JP6139334B2 (ja) * 2013-08-28 2017-05-31 東芝マテリアル株式会社 蛍光体およびその製造方法、並びにその蛍光体を用いたｌｅｄランプ
KR102106143B1 (ko) 2013-09-02 2020-05-04 대주전자재료 주식회사 적색 형광체 및 이를 이용한 백색 발광 장치
EP3053987A4 (en) 2013-09-30 2016-11-30 Panasonic Ip Man Co Ltd PHOSPHORUS, LIGHT-EMITTING DEVICE THEREFOR, LIGHTING LIGHT SOURCE AND LIGHTING DEVICE THEREWITH
RU2672747C2 (ru) 2013-10-08 2018-11-19 Осрам Опто Семикондакторз Гмбх Люминофор, способ получения люминофора и применение люминофора
US9267650B2 (en) 2013-10-09 2016-02-23 Ilumisys, Inc. Lens for an LED-based light
JP6384893B2 (ja) * 2013-10-23 2018-09-05 株式会社光波 単結晶蛍光体及び発光装置
JP5620562B1 (ja) 2013-10-23 2014-11-05 株式会社光波 単結晶蛍光体及び発光装置
FR3012677B1 (fr) * 2013-10-25 2015-12-25 Commissariat Energie Atomique Dispositif emissif lumineux, dispositif et procede d'ajustement d'une emission lumineuse d'une diode electroluminescente a phosphore
US10069046B2 (en) 2013-11-13 2018-09-04 Lg Innotek Co., Ltd. Bluish green phosphor and light emitting device package including the same
WO2015077357A1 (en) 2013-11-22 2015-05-28 Nitto Denko Corporation Light extraction element
US9551468B2 (en) 2013-12-10 2017-01-24 Gary W. Jones Inverse visible spectrum light and broad spectrum light source for enhanced vision
US10288233B2 (en) 2013-12-10 2019-05-14 Gary W. Jones Inverse visible spectrum light and broad spectrum light source for enhanced vision
JP6222452B2 (ja) 2013-12-17 2017-11-01 日本電気硝子株式会社 波長変換部材及び発光デバイス
WO2015099115A1 (ja) 2013-12-27 2015-07-02 三菱化学株式会社 発光装置及び発光装置の設計方法
CN105849920B (zh) 2013-12-27 2020-11-06 西铁城电子株式会社 发光装置和发光装置的设计方法
JP2017504166A (ja) 2014-01-22 2017-02-02 イルミシス, インコーポレイテッドiLumisys, Inc. アドレス指定されたｌｅｄを有するｌｅｄベース電灯
US9406654B2 (en) 2014-01-27 2016-08-02 Ledengin, Inc. Package for high-power LED devices
JP6528418B2 (ja) 2014-01-29 2019-06-12 日亜化学工業株式会社 蛍光体及びこれを用いた発光装置
CN103779488A (zh) * 2014-01-31 2014-05-07 芜湖市神龙新能源科技有限公司 一种白色led灯光电玻璃
JP6038824B2 (ja) 2014-02-07 2016-12-07 信越化学工業株式会社 硬化性組成物、半導体装置、及びエステル結合含有有機ケイ素化合物
KR101501020B1 (ko) * 2014-02-17 2015-03-13 주식회사 루멘스 발광 소자 패키지, 백라이트 유닛, 조명 장치 및 발광 소자 패키지의 제조 방법
US9360188B2 (en) 2014-02-20 2016-06-07 Cree, Inc. Remote phosphor element filled with transparent material and method for forming multisection optical elements
KR102219263B1 (ko) 2014-02-28 2021-02-24 대주전자재료 주식회사 산질화물계 적색 형광체 및 이를 이용한 백색 발광 장치
US9442245B2 (en) * 2014-03-13 2016-09-13 Norman Napaul Pepin Light scaffold electric arc sound effect
US9680067B2 (en) 2014-03-18 2017-06-13 GE Lighting Solutions, LLC Heavily phosphor loaded LED packages having higher stability
US9590148B2 (en) * 2014-03-18 2017-03-07 GE Lighting Solutions, LLC Encapsulant modification in heavily phosphor loaded LED packages for improved stability
JP2015199640A (ja) 2014-04-01 2015-11-12 日本電気硝子株式会社 波長変換部材及びそれを用いてなる発光デバイス
KR102213650B1 (ko) 2014-04-18 2021-02-08 대주전자재료 주식회사 산질화물계 형광체 및 이를 이용한 백색 발광 장치
US9593812B2 (en) 2014-04-23 2017-03-14 Cree, Inc. High CRI solid state lighting devices with enhanced vividness
US9241384B2 (en) 2014-04-23 2016-01-19 Cree, Inc. Solid state lighting devices with adjustable color point
US9510400B2 (en) 2014-05-13 2016-11-29 Ilumisys, Inc. User input systems for an LED-based light
US9215761B2 (en) 2014-05-15 2015-12-15 Cree, Inc. Solid state lighting devices with color point non-coincident with blackbody locus
JP2016027613A (ja) 2014-05-21 2016-02-18 日本電気硝子株式会社 波長変換部材及びそれを用いた発光装置
CN103980902A (zh) * 2014-05-21 2014-08-13 烟台建塬光电技术有限公司 掺杂Ga、Bi的铝酸盐绿色荧光粉及其制备方法
US9318670B2 (en) 2014-05-21 2016-04-19 Intematix Corporation Materials for photoluminescence wavelength converted solid-state light emitting devices and arrangements
DE102014107321B4 (de) 2014-05-23 2019-06-27 Tailorlux Gmbh Infrarot LED
KR101476217B1 (ko) 2014-05-28 2014-12-24 엘지전자 주식회사 황색 발광 형광체 및 이를 이용한 발광 소자 패키지
US9515056B2 (en) 2014-06-06 2016-12-06 Cree, Inc. Solid state lighting device including narrow spectrum emitter
US9192013B1 (en) 2014-06-06 2015-11-17 Cree, Inc. Lighting devices with variable gamut
JP6406109B2 (ja) 2014-07-08 2018-10-17 日亜化学工業株式会社 蛍光体およびそれを用いた発光装置ならびに蛍光体の製造方法
KR101467808B1 (ko) 2014-07-14 2014-12-03 엘지전자 주식회사 황색 발광 형광체 및 이를 이용한 발광 소자 패키지
US20160064630A1 (en) * 2014-08-26 2016-03-03 Texas Instruments Incorporated Flip chip led package
KR102275147B1 (ko) 2014-09-12 2021-07-09 대주전자재료 주식회사 산질화물계 형광체 및 이를 이용한 발광 장치
US9528876B2 (en) 2014-09-29 2016-12-27 Innovative Science Tools, Inc. Solid state broad band near-infrared light source
RU2684998C2 (ru) * 2014-09-30 2019-04-16 ФОРД ГЛОУБАЛ ТЕКНОЛОДЖИЗ, ЭлЭлСи Устройство подсветки и система освещения для транспортного средства (варианты)
CN105567236B (zh) * 2014-10-15 2018-07-20 有研稀土新材料股份有限公司 石榴石型荧光粉和制备方法及包含该荧光粉的装置
EP3224874B1 (en) 2014-11-26 2019-04-24 LedEngin, Inc. Compact emitter for warm dimming and color tunable lamp
US9701411B2 (en) * 2014-12-10 2017-07-11 Airbus Operations Gmbh Evacuation slide with a guidance marking
JP6486099B2 (ja) * 2014-12-19 2019-03-20 シチズン電子株式会社 Ｌｅｄ発光モジュール
JP6514510B2 (ja) * 2015-01-14 2019-05-15 株式会社小糸製作所 車両用灯具
US9530944B2 (en) 2015-01-27 2016-12-27 Cree, Inc. High color-saturation lighting devices with enhanced long wavelength illumination
US9702524B2 (en) 2015-01-27 2017-07-11 Cree, Inc. High color-saturation lighting devices
US10274616B2 (en) 2015-02-26 2019-04-30 Saint-Gobain Cristaux & Detecteurs Scintillation crystal including a co-doped rare earth silicate, a radiation detection apparatus including the scintillation crystal, and a process of forming the same
US9530943B2 (en) 2015-02-27 2016-12-27 Ledengin, Inc. LED emitter packages with high CRI
US9681510B2 (en) 2015-03-26 2017-06-13 Cree, Inc. Lighting device with operation responsive to geospatial position
EP4273944A3 (en) * 2015-04-02 2024-02-07 Nichia Corporation Light emitting device and method for manufacturing the same
US9509217B2 (en) 2015-04-20 2016-11-29 Altera Corporation Asymmetric power flow controller for a power converter and method of operating the same
US9974138B2 (en) 2015-04-21 2018-05-15 GE Lighting Solutions, LLC Multi-channel lamp system and method with mixed spectrum
US9943042B2 (en) 2015-05-18 2018-04-17 Biological Innovation & Optimization Systems, LLC Grow light embodying power delivery and data communications features
US10161568B2 (en) 2015-06-01 2018-12-25 Ilumisys, Inc. LED-based light with canted outer walls
US9900957B2 (en) 2015-06-11 2018-02-20 Cree, Inc. Lighting device including solid state emitters with adjustable control
WO2016199406A1 (ja) 2015-06-12 2016-12-15 株式会社 東芝 蛍光体およびその製造方法、ならびにｌｅｄランプ
JP6544082B2 (ja) * 2015-06-30 2019-07-17 日亜化学工業株式会社 発光装置
CN106328008B (zh) * 2015-06-30 2019-03-22 光宝光电(常州)有限公司 胶体填充至壳体的制法、发光二极管的数字显示器及制法
DE112016003272T5 (de) * 2015-07-22 2018-04-05 Panasonic Intellectual Property Management Co., Ltd. Granatverbindung und Verfahren zu deren Herstellung, lichtemittierende Vorrichtung und Dekorgegenstand, bei denen die Granatverbindung verwendet wird, und Verfahren zur Verwendung der Granatverbindung
CN106501994B (zh) * 2015-09-08 2021-10-29 青岛海信电器股份有限公司 一种量子点发光器件、背光模组及显示装置
US9844116B2 (en) 2015-09-15 2017-12-12 Biological Innovation & Optimization Systems, LLC Systems and methods for controlling the spectral content of LED lighting devices
US9788387B2 (en) 2015-09-15 2017-10-10 Biological Innovation & Optimization Systems, LLC Systems and methods for controlling the spectral content of LED lighting devices
EP3875839A1 (en) 2015-09-29 2021-09-08 Cabatech, LLC Horticulture grow lights
JP2017107071A (ja) 2015-12-10 2017-06-15 日本電気硝子株式会社 波長変換部材及び波長変換素子、並びにそれらを用いた発光装置
JP6681581B2 (ja) * 2015-12-21 2020-04-15 パナソニックＩｐマネジメント株式会社 発光装置、及び、照明装置
US10354938B2 (en) 2016-01-12 2019-07-16 Greentech LED Lighting device using short thermal path cooling technology and other device cooling by placing selected openings on heat sinks
US11021610B2 (en) 2016-01-14 2021-06-01 Basf Se Perylene bisimides with rigid 2,2′-biphenoxy bridges
US11050005B2 (en) 2016-03-08 2021-06-29 Panasonic Intellectual Property Management Co., Ltd. Phosphor and light emitting device
JP7030057B2 (ja) * 2016-03-10 2022-03-04 ルミレッズ ホールディング ベーフェー Ｌｅｄモジュール
US10355175B2 (en) 2016-03-10 2019-07-16 Panasonic Intellectual Property Management Co., Ltd. Light emitting device
US10054485B2 (en) 2016-03-17 2018-08-21 Raytheon Company UV LED-phosphor based hyperspectral calibrator
CN109155347B (zh) 2016-05-20 2021-05-07 株式会社东芝 白色光源
JP2018003006A (ja) 2016-06-24 2018-01-11 パナソニック株式会社 蛍光体およびその製造方法、ならびに発光装置
JP6906277B2 (ja) 2016-06-27 2021-07-21 日本電気硝子株式会社 波長変換部材及びそれを用いてなる発光デバイス
JP6880528B2 (ja) 2016-06-27 2021-06-02 日本電気硝子株式会社 波長変換部材及びそれを用いてなる発光デバイス
WO2018042949A1 (ja) 2016-08-29 2018-03-08 パナソニックＩｐマネジメント株式会社 蛍光体及び発光装置
US10595376B2 (en) 2016-09-13 2020-03-17 Biological Innovation & Optimization Systems, LLC Systems and methods for controlling the spectral content of LED lighting devices
EP3513401A4 (en) * 2016-09-14 2020-05-27 Lutron Ketra, LLC LIGHTING DEVICE AND METHOD FOR ADJUSTING PERIODIC CHANGES IN EMULATION PERFORMANCE
JP2018058383A (ja) * 2016-09-30 2018-04-12 トヨタ自動車株式会社 車両下部構造
CN109803969B (zh) 2016-10-06 2022-08-05 巴斯夫欧洲公司 2-苯基苯氧基取代的苝双酰亚胺化合物及其用途
US10219345B2 (en) 2016-11-10 2019-02-26 Ledengin, Inc. Tunable LED emitter with continuous spectrum
KR101961030B1 (ko) * 2016-11-18 2019-03-22 효성화학 주식회사 휘도 향상 필름과 그 제조방법
EP3545043A1 (en) 2016-11-28 2019-10-02 Merck Patent GmbH Composition comprising a nanosized light emitting material
US10800967B2 (en) 2016-12-07 2020-10-13 Konoshima Chemical Co., Ltd. Ceramic composition
TW201828505A (zh) * 2017-01-20 2018-08-01 聯京光電股份有限公司 光電封裝體及其製造方法
US10465869B2 (en) 2017-01-30 2019-11-05 Ideal Industries Lighting Llc Skylight fixture
US10451229B2 (en) 2017-01-30 2019-10-22 Ideal Industries Lighting Llc Skylight fixture
US10174438B2 (en) 2017-03-30 2019-01-08 Slt Technologies, Inc. Apparatus for high pressure reaction
DE102017108136B4 (de) 2017-04-13 2019-03-14 X-Fab Semiconductor Foundries Ag Geometrisch geformte Bauelemente in einer Anordnung für einen Überführungsdruck (Transfer Print) und zugehörige Verfahren
JP6917179B2 (ja) * 2017-04-18 2021-08-11 スタンレー電気株式会社 白色発光装置
CN108805169B (zh) * 2017-05-04 2021-06-01 宏达国际电子股份有限公司 影像处理方法、非暂态电脑可读取媒体以及影像处理系统
JP6863071B2 (ja) * 2017-05-19 2021-04-21 日亜化学工業株式会社 希土類アルミニウム・ガリウム酸塩の組成を有する蛍光体及び発光装置
DE102017116936A1 (de) * 2017-07-26 2019-01-31 Ledvance Gmbh Verbindung eines elektrischen Leitelements mit einer Leiterplatte eines Leuchtmittels
US11079077B2 (en) 2017-08-31 2021-08-03 Lynk Labs, Inc. LED lighting system and installation methods
CN111149432B (zh) * 2017-09-20 2023-05-12 美题隆精密光学（上海）有限公司 具有无机粘结剂的荧光轮
JP7022367B2 (ja) 2017-09-27 2022-02-18 日本電気硝子株式会社 波長変換材料に用いられるガラス、波長変換材料、波長変換部材及び発光デバイス
JP7002275B2 (ja) * 2017-10-03 2022-02-21 株式会社小糸製作所 車両用灯具
KR102428755B1 (ko) * 2017-11-24 2022-08-02 엘지디스플레이 주식회사 파장 변환이 가능한 광섬유 및 이를 사용하는 백라이트 유닛
JP7268315B2 (ja) 2017-12-12 2023-05-08 日本電気硝子株式会社 波長変換部材及びその製造方法、並びに発光装置
KR20200100702A (ko) 2017-12-19 2020-08-26 바스프 에스이 시아노아릴 치환된 벤즈(오티)오크산텐 화합물
CN108264234A (zh) * 2018-01-11 2018-07-10 武汉理工大学 一种嵌有GYAGG：Ce微晶相的闪烁微晶玻璃及其制备方法
US20190219874A1 (en) * 2018-01-16 2019-07-18 Huizhou China Star Optoelectronics Technology Co., Ltd. Backlight module and display device
US11072555B2 (en) 2018-03-02 2021-07-27 Coorstek Kk Glass member
US10575374B2 (en) 2018-03-09 2020-02-25 Ledengin, Inc. Package for flip-chip LEDs with close spacing of LED chips
WO2019179981A1 (en) 2018-03-20 2019-09-26 Basf Se Yellow light emitting device
US20210118855A1 (en) * 2018-05-17 2021-04-22 Semiconductor Energy Laboratory Co., Ltd. Display device
EP3588187A1 (en) 2018-06-22 2020-01-01 Sunland Optics Srl An image projection system
IT201900009681A1 (it) 2019-06-20 2020-12-20 Tlpicoglass Srl Sistema di proiezione di immagini
WO2020012923A1 (ja) 2018-07-12 2020-01-16 パナソニックＩｐマネジメント株式会社 光源装置、プロジェクタ及び車両
JP6975863B2 (ja) * 2018-08-07 2021-12-01 三井金属鉱業株式会社 光拡散部材、並びにこれを用いた光拡散構造体及び発光構造体
DE102018213377A1 (de) * 2018-08-09 2020-02-13 Robert Bosch Gmbh Spektrometer und Verfahren zur Kalibrierung des Spektrometers
DE112019004568T5 (de) 2018-09-12 2021-05-27 Panasonic Intellectual Property Management Co., Ltd. Wellenlängenumwandlungselement, lichtquellenvorrichtung, bei der dieses verwendet wird, projektor und fahrzeug
DE102018217889B4 (de) 2018-10-18 2023-09-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Gelber Leuchtstoff und Konversions-LED
RU192820U1 (ru) * 2018-11-13 2019-10-02 Василий Сергеевич Евтеев Свето-информационное устройство
MX2021005768A (es) * 2018-11-15 2021-10-13 Dean Levin Dispositivo de decantación de fluidos con emisión de luz y método de ratamiento de un fluido con luz.
CN111286330A (zh) 2018-12-06 2020-06-16 松下知识产权经营株式会社 荧光体及使用了它的半导体发光装置
US11421843B2 (en) 2018-12-21 2022-08-23 Kyocera Sld Laser, Inc. Fiber-delivered laser-induced dynamic light system
US11239637B2 (en) 2018-12-21 2022-02-01 Kyocera Sld Laser, Inc. Fiber delivered laser induced white light system
JP2020106831A (ja) 2018-12-27 2020-07-09 日本電気硝子株式会社 波長変換部材及び発光装置
US11466384B2 (en) 2019-01-08 2022-10-11 Slt Technologies, Inc. Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate
US11884202B2 (en) 2019-01-18 2024-01-30 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system
JP7145096B2 (ja) 2019-02-12 2022-09-30 信越化学工業株式会社 微小構造体移載装置、スタンプヘッドユニット、微小構造体移載用スタンプ部品及び微小構造体集積部品の移載方法
CN113544236A (zh) 2019-04-18 2021-10-22 日本电气硝子株式会社 波长转换部件及其制造方法、以及发光装置
JPWO2020213456A1 (zh) 2019-04-18 2020-10-22
US11313671B2 (en) 2019-05-28 2022-04-26 Mitutoyo Corporation Chromatic confocal range sensing system with enhanced spectrum light source configuration
RU2720046C1 (ru) * 2019-07-17 2020-04-23 Федеральное государственное бюджетное образовательное учреждение высшего образования "Томский государственный университет систем управления и радиоэлектроники" Светодиодная гетероструктура с квантовыми ямами комбинированного профиля
KR102230355B1 (ko) 2019-09-27 2021-03-22 강원대학교산학협력단 백색 발광 소재의 제조방법
RU195810U1 (ru) * 2019-09-27 2020-02-05 Федеральное государственное бюджетное образовательное учреждение высшего образования "Томский государственный университет систем управления и радиоэлектроники" (ТУСУР) Светоизлучающий диод
US11561338B2 (en) 2019-09-30 2023-01-24 Nichia Corporation Light-emitting module
US11112555B2 (en) 2019-09-30 2021-09-07 Nichia Corporation Light-emitting module with a plurality of light guide plates and a gap therein
JP2021059686A (ja) 2019-10-09 2021-04-15 パナソニックＩｐマネジメント株式会社 蛍光体およびそれを使用した半導体発光装置
US11721549B2 (en) 2020-02-11 2023-08-08 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
EP4104201A1 (en) 2020-02-11 2022-12-21 SLT Technologies, Inc. Improved group iii nitride substrate, method of making, and method of use
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device
CN111944350B (zh) * 2020-08-27 2022-01-25 兰州大学 基于YAG Ce的暖白色荧光汽车涂漆及其制备方法
JP2023539329A (ja) * 2020-09-01 2023-09-13 ゼネラル・エレクトリック・カンパニイ 暗視機器に適合するデバイス
US11444225B2 (en) 2020-09-08 2022-09-13 Dominant Opto Technologies Sdn Bhd Light emitting diode package having a protective coating
US11329206B2 (en) 2020-09-28 2022-05-10 Dominant Opto Technologies Sdn Bhd Lead frame and housing sub-assembly for use in a light emitting diode package and method for manufacturing the same
KR20230104135A (ko) 2020-11-19 2023-07-07 니폰 덴키 가라스 가부시키가이샤 파장 변환 부재 및 그 제조 방법
US20240060624A1 (en) 2021-01-26 2024-02-22 Solutia Inc. Light systems having a diffusive pvb interlayer
JP2022158107A (ja) 2021-04-01 2022-10-17 日本電気硝子株式会社 波長変換部材及び発光デバイス
CN117716521A (zh) 2021-07-29 2024-03-15 松下知识产权经营株式会社 发光装置及电子设备

Family Cites Families (258)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US215074A (en) * 1879-05-06 Improvement in stamp-mills
US362048A (en) * 1887-04-26 watkins
US5816677A (en) 1905-03-01 1998-10-06 Canon Kabushiki Kaisha Backlight device for display apparatus
US2557049A (en) * 1946-05-03 1951-06-12 Turner Of Indiana Power-driven posthole digger
US2924732A (en) * 1957-07-05 1960-02-09 Westinghouse Electric Corp Area-type light source
BE624851A (zh) 1961-05-08
NL135101C (zh) 1964-05-14
GB1112992A (en) * 1964-08-18 1968-05-08 Texas Instruments Inc Three-dimensional integrated circuits and methods of making same
US3342308A (en) * 1966-08-09 1967-09-19 Sperry Rand Corp Corn processing machine elevator unit structure
US3560649A (en) 1967-05-23 1971-02-02 Tektronix Inc Cathode ray tube with projection means
US3560849A (en) 1967-08-15 1971-02-02 Aai Corp Liquid temperature controlled test chamber and transport apparatus for electrical circuit assemblies
US3554776A (en) * 1967-11-24 1971-01-12 Allied Chem Novel perylenetetracarboxylic diimide compositions
US3623857A (en) * 1968-03-22 1971-11-30 Johns Manville Glass melting pot
US3510732A (en) * 1968-04-22 1970-05-05 Gen Electric Solid state lamp having a lens with rhodamine or fluorescent material dispersed therein
SE364160B (zh) * 1969-05-26 1974-02-11 Western Electric Co
US3699478A (en) * 1969-05-26 1972-10-17 Bell Telephone Labor Inc Display system
BE757125A (fr) 1969-10-06 1971-03-16 Rca Corp Procede photographique pour former l'ecran luminescent d'un tube a rayons cathodiques
US3691482A (en) * 1970-01-19 1972-09-12 Bell Telephone Labor Inc Display system
US3652956A (en) * 1970-01-23 1972-03-28 Bell Telephone Labor Inc Color visual display
US3699476A (en) * 1971-03-05 1972-10-17 Rca Corp Crystal controlled digital logic gate oscillator
JPS4717684U (zh) 1971-03-27 1972-10-30
JPS4839866U (zh) 1971-09-13 1973-05-18
DE2244397C3 (de) 1971-09-21 1974-07-18 Tovarna Motornih Vozil Tomos, Koper (Jugoslawien) Schalteinrichtung für ein mehrstufiges Keilriemenwechselgetriebe
JPS48102585A (zh) * 1972-04-04 1973-12-22
JPS491221A (zh) 1972-04-17 1974-01-08
JPS5240959B2 (zh) 1972-08-07 1977-10-15
JPS4979379A (zh) 1972-12-06 1974-07-31
JPS4985068U (zh) * 1972-11-10 1974-07-23
FR2248663B1 (zh) 1972-12-13 1978-08-11 Radiotechnique Compelec
JPS5531825Y2 (zh) 1972-12-27 1980-07-29
JPS49106283A (zh) 1973-02-09 1974-10-08
JPS49112577A (zh) 1973-02-23 1974-10-26
US3819974A (en) * 1973-03-12 1974-06-25 D Stevenson Gallium nitride metal-semiconductor junction light emitting diode
JPS5640994B2 (zh) 1973-03-22 1981-09-25
US3842306A (en) 1973-06-21 1974-10-15 Gen Electric Alumina coatings for an electric lamp
JPS5043913A (zh) * 1973-08-20 1975-04-21
JPS5079379A (zh) 1973-11-13 1975-06-27
JPS5079379U (zh) * 1973-11-24 1975-07-09
US3882502A (en) 1974-01-17 1975-05-06 Us Navy Crt multiple-scan display apparatus and method providing target discrimination
JPS5713156B2 (zh) * 1974-02-28 1982-03-15
US4123161A (en) * 1974-06-18 1978-10-31 Pappas George J Apparatus for and method of examining light
JPS5240959A (en) 1975-09-29 1977-03-30 Toshiba Corp Color picture tube
JPS5245181A (en) 1975-10-07 1977-04-09 Matsushita Electric Works Ltd Chain
US4001628A (en) 1976-02-25 1977-01-04 Westinghouse Electric Corporation Low-pressure fluorescent discharge device which utilizes both inorganic and organic phosphors
US4143297A (en) * 1976-03-08 1979-03-06 Brown, Boveri & Cie Aktiengesellschaft Information display panel with zinc sulfide powder electroluminescent layers
JPS537153U (zh) 1976-07-05 1978-01-21
JPS537153A (en) 1976-07-09 1978-01-23 Fujitsu Ltd Program loop detection-recording system
GB1589964A (en) 1976-09-03 1981-05-20 Johnson Matthey Co Ltd Luminescent materials
NL7707008A (nl) * 1977-06-24 1978-12-28 Philips Nv Luminescentiescherm.
JPS5441660A (en) 1977-09-09 1979-04-03 Matsushita Electric Works Ltd Timer
JPS5332545Y2 (zh) 1977-09-13 1978-08-11
FR2407588A1 (fr) 1977-10-28 1979-05-25 Cit Alcatel Procede de realisation de barres d'alimentation
NL7806828A (nl) * 1978-06-26 1979-12-28 Philips Nv Luminescentiescherm.
JPS555533U (zh) * 1978-06-26 1980-01-14
JPS583420B2 (ja) 1978-06-27 1983-01-21 株式会社リコー マトリクス駆動回路
JPS556687A (en) * 1978-06-29 1980-01-18 Handotai Kenkyu Shinkokai Traffic use display
US4271408A (en) * 1978-10-17 1981-06-02 Stanley Electric Co., Ltd. Colored-light emitting display
DE3117571A1 (de) * 1981-05-04 1982-11-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Lumineszenz-halbleiterbauelement
CA1192919A (en) 1981-12-21 1985-09-03 Bernard J. Finn Vehicle wheel suspension
JPS5930107U (ja) 1982-08-19 1984-02-24 スタンレー電気株式会社 カラ−フイルタ−付導光板
NL8203543A (nl) 1982-09-13 1984-04-02 Oce Nederland Bv Kopieerapparaat.
JPS5950445A (ja) 1982-09-16 1984-03-23 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 電子写真材料
JPS5950455U (ja) * 1982-09-24 1984-04-03 三洋電機株式会社 発光ダイオ−ド装置
JPS5967673A (ja) * 1982-10-12 1984-04-17 Toyo Commun Equip Co Ltd 面照明用発光ダイオ−ド
NL8205044A (nl) * 1982-12-30 1984-07-16 Philips Nv Lagedrukkwikdampontladingslamp.
JPS6073580A (ja) * 1983-09-29 1985-04-25 東芝ライテック株式会社 表示装置
JPS6081878A (ja) 1983-10-11 1985-05-09 Shinyoushiya:Kk 複合形発光ダイオ−ドの発光光色制御方法
US4550256A (en) 1983-10-17 1985-10-29 At&T Bell Laboratories Visual display system utilizing high luminosity single crystal garnet material
JPS60185457A (ja) 1984-03-05 1985-09-20 Canon Inc フアクシミリ装置
US4857228A (en) * 1984-04-24 1989-08-15 Sunstone Inc. Phosphors and methods of preparing the same
JPS60185457U (ja) * 1984-05-19 1985-12-09 セイレイ工業株式会社 枝打機のエンジンストツプセンサ−配置構造
JPS61158606A (ja) 1984-12-28 1986-07-18 株式会社小糸製作所 照明装置
NL8502025A (nl) * 1985-07-15 1987-02-02 Philips Nv Lagedrukkwikdampontladingslamp.
JPS6220237U (zh) * 1985-07-23 1987-02-06
JPS62109185U (zh) * 1985-12-27 1987-07-11
NL8600023A (nl) * 1986-01-08 1987-08-03 Philips Nv Lagedrukkwikdampontladingslamp.
JPS62167398A (ja) 1986-01-17 1987-07-23 花王株式会社 高密度粒状洗剤組成物
JPS62189770A (ja) 1986-02-15 1987-08-19 Fumio Inaba 接合型半導体発光素子
JPS62232827A (ja) 1986-03-31 1987-10-13 松下電器産業株式会社 照光素子付操作パネル駆動回路
DE3856230T2 (de) 1987-04-20 1998-12-10 Fuji Photo Film Co Ltd Kassette, Vorrichtung und Wischverfahren für ein stimulierbares Phosphorblatt
JPH079998B2 (ja) * 1988-01-07 1995-02-01 科学技術庁無機材質研究所長 立方晶窒化ほう素のＰ−ｎ接合型発光素子
JPS63291980A (ja) 1987-05-25 1988-11-29 Canon Inc 強誘電性液晶素子
JPS63299186A (ja) * 1987-05-29 1988-12-06 Hitachi Ltd 発光素子
US4929965A (en) * 1987-09-02 1990-05-29 Alps Electric Co. Optical writing head
JPH01189695A (ja) * 1988-01-25 1989-07-28 Yokogawa Electric Corp Ｌｅｄ表示装置
DE3804293A1 (de) * 1988-02-12 1989-08-24 Philips Patentverwaltung Anordnung mit einer elektrolumineszenz- oder laserdiode
JP2594609B2 (ja) 1988-04-08 1997-03-26 富士通株式会社 表示パネルのバック照明構造
JPH01260707A (ja) 1988-04-11 1989-10-18 Idec Izumi Corp 白色発光装置
JPH0218973A (ja) * 1988-07-07 1990-01-23 Shibasoku Co Ltd 発光ダイオード試験装置
US5043716A (en) * 1988-07-14 1991-08-27 Adaptive Micro Systems, Inc. Electronic display with lens matrix
JPH0291980A (ja) 1988-09-29 1990-03-30 Toshiba Lighting & Technol Corp 固体発光素子
JP2770350B2 (ja) 1988-10-20 1998-07-02 富士通株式会社 液晶表示装置
US5034965A (en) 1988-11-11 1991-07-23 Matsushita Electric Industrial Co., Ltd. Efficient coding method and its decoding method
JPH02202073A (ja) * 1989-01-31 1990-08-10 Hitachi Chem Co Ltd 電子部品
JP2704181B2 (ja) * 1989-02-13 1998-01-26 日本電信電話株式会社 化合物半導体単結晶薄膜の成長方法
JPH02271304A (ja) * 1989-04-12 1990-11-06 Seiko Epson Corp 表示体用照明装置
US4992704A (en) * 1989-04-17 1991-02-12 Basic Electronics, Inc. Variable color light emitting diode
JPH0324692A (ja) 1989-06-21 1991-02-01 Fuji Electric Co Ltd 自動貸出機の制御装置
JPH0324692U (zh) 1989-07-18 1991-03-14
US5221984A (en) 1989-09-18 1993-06-22 Kabushiki Kaisha Toshiba Optical data transmission device with parallel channel paths for arrayed optical elements
JPH03152898A (ja) 1989-11-09 1991-06-28 Hitachi Maxell Ltd 分散型ｅｌ素子
US5118985A (en) * 1989-12-29 1992-06-02 Gte Products Corporation Fluorescent incandescent lamp
JP2995664B2 (ja) * 1990-05-17 1999-12-27 小糸工業株式会社 情報表示装置
NL9001193A (nl) * 1990-05-23 1991-12-16 Koninkl Philips Electronics Nv Straling-emitterende halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting.
US5368673A (en) 1990-06-28 1994-11-29 Daihen Corporation Joining method for joining electrically ceramic bodies and a joining apparatus and joining agent for use in the joining method
JP2506223B2 (ja) 1990-06-28 1996-06-12 トリニティ工業株式会社 自動塗装装置
JPH0463162A (ja) 1990-06-29 1992-02-28 Suzuki Motor Corp 塗装装置
US5257049A (en) 1990-07-03 1993-10-26 Agfa-Gevaert N.V. LED exposure head with overlapping electric circuits
JPH0480286A (ja) 1990-07-23 1992-03-13 Matsushita Electron Corp 蛍光高圧水銀灯
JP2924125B2 (ja) 1990-07-30 1999-07-26 東レ株式会社 不織布用ポリエステル繊維
DE9013615U1 (zh) * 1990-09-28 1990-12-06 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt, De
JPH0463162U (zh) * 1990-10-02 1992-05-29
JPH0463163U (zh) 1990-10-04 1992-05-29
KR940002570B1 (ko) * 1990-11-02 1994-03-25 삼성전관 주식회사 백색발광 형광체
JPH04175265A (ja) * 1990-11-07 1992-06-23 Sumitomo Electric Ind Ltd 着色透光性ｙａｇ焼結体及びその製造方法
JP2593960B2 (ja) * 1990-11-29 1997-03-26 シャープ株式会社 化合物半導体発光素子とその製造方法
JP3160914B2 (ja) 1990-12-26 2001-04-25 豊田合成株式会社 窒化ガリウム系化合物半導体レーザダイオード
JPH04234481A (ja) * 1990-12-28 1992-08-24 Matsushita Electron Corp 蛍光高圧水銀灯
FR2677139B1 (fr) * 1991-05-31 1994-03-18 Hughes Aircraft Cy Substance luminescence emettant dans le rouge lointain, pour tubes cathodiques.
US5202777A (en) * 1991-05-31 1993-04-13 Hughes Aircraft Company Liquid crystal light value in combination with cathode ray tube containing a far-red emitting phosphor
JPH0543913A (ja) 1991-08-08 1993-02-23 Mitsubishi Materials Corp 相手攻撃性のきわめて低いＦｅ基焼結合金製バルブシ−ト
JPH0563068A (ja) 1991-08-30 1993-03-12 Shin Etsu Handotai Co Ltd ウエーハバスケツト
JPH0579379A (ja) 1991-09-19 1993-03-30 Hitachi Ltd 制御方法
JP2666228B2 (ja) * 1991-10-30 1997-10-22 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子
US5306662A (en) * 1991-11-08 1994-04-26 Nichia Chemical Industries, Ltd. Method of manufacturing P-type compound semiconductor
JP2540791B2 (ja) 1991-11-08 1996-10-09 日亜化学工業株式会社 ｐ型窒化ガリウム系化合物半導体の製造方法。
JPH05152609A (ja) * 1991-11-25 1993-06-18 Nichia Chem Ind Ltd 発光ダイオード
JPH05142424A (ja) 1991-11-26 1993-06-11 Nec Kansai Ltd 平面発光板
US5208462A (en) 1991-12-19 1993-05-04 Allied-Signal Inc. Wide bandwidth solid state optical source
DE69218387T2 (de) * 1992-01-07 1997-09-18 Philips Electronics Nv Niederdruckquecksilberentladungslampe
JPH0560368U (ja) * 1992-01-27 1993-08-10 恵助 山下 箸
JPH0563068U (ja) 1992-01-31 1993-08-20 シャープ株式会社 樹脂封止型発光体
JPH05226676A (ja) 1992-02-14 1993-09-03 Sharp Corp 半導体装置
JP3047600B2 (ja) 1992-03-04 2000-05-29 株式会社イナックス 濾過装置付き気泡浴槽装置の制御方法
JPH0613659A (ja) * 1992-04-30 1994-01-21 Takiron Co Ltd 発光ダイオードの輝度調整装置
JPH05331584A (ja) 1992-06-02 1993-12-14 Toyota Motor Corp 高弾性・高強度アルミニウム合金
JP3365787B2 (ja) * 1992-06-18 2003-01-14 シャープ株式会社 Ｌｅｄチップ実装部品
JP2917742B2 (ja) 1992-07-07 1999-07-12 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子とその製造方法
JPH0629576A (ja) * 1992-07-09 1994-02-04 Sharp Corp 発光表示素子
JPH0627327A (ja) 1992-07-13 1994-02-04 Seiko Epson Corp 照明装置
EP1313153A3 (en) 1992-07-23 2005-05-04 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
WO1994003931A1 (fr) * 1992-08-07 1994-02-17 Asahi Kasei Kogyo Kabushiki Kaisha Dispositif semi-conducteur a base de nitrure et fabrication
JPH0669546A (ja) * 1992-08-21 1994-03-11 Asahi Chem Ind Co Ltd 発光ダイオード
US5334855A (en) * 1992-08-24 1994-08-02 Motorola, Inc. Diamond/phosphor polycrystalline led and display
JPH0682633A (ja) 1992-09-03 1994-03-25 Chuo Musen Kk 面光源
JP2842739B2 (ja) * 1992-09-14 1999-01-06 富士通株式会社 面光源ユニット及び液晶表示装置
DE69322607T2 (de) * 1992-09-23 1999-06-17 Koninkl Philips Electronics Nv Quecksilberniederdruckentladungslampe
JPH06139973A (ja) 1992-10-26 1994-05-20 Matsushita Electric Ind Co Ltd 平板型画像表示装置
JP3284208B2 (ja) 1992-11-17 2002-05-20 東ソー株式会社 バックライト
JP2560963B2 (ja) 1993-03-05 1996-12-04 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
US5578839A (en) * 1992-11-20 1996-11-26 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
US5317348A (en) * 1992-12-01 1994-05-31 Knize Randall J Full color solid state laser projector system
JP2711205B2 (ja) 1993-01-20 1998-02-10 鐘紡株式会社 複合発泡ポリエステルシート
JP3467788B2 (ja) 1993-02-09 2003-11-17 東ソー株式会社 バックライト
JP2932467B2 (ja) 1993-03-12 1999-08-09 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JPH07321407A (ja) 1993-04-05 1995-12-08 Fuji Electric Co Ltd 樹脂封止形レーザーダイオード装置
JPH06296043A (ja) * 1993-04-08 1994-10-21 Matsushita Electric Ind Co Ltd 発光ダイオード
JPH06314826A (ja) * 1993-04-28 1994-11-08 Victor Co Of Japan Ltd 発光ダイオードアレイ
JPH0742152A (ja) 1993-07-29 1995-02-10 Hitachi Constr Mach Co Ltd パイルハンマ
US5514179A (en) * 1993-08-10 1996-05-07 Brennan; H. George Modular facial implant system
JP2584562Y2 (ja) 1993-09-01 1998-11-05 ダイハツ工業株式会社 ラックアンドピニオン式ステアリングのラックガイド
JPH0799345A (ja) 1993-09-28 1995-04-11 Nichia Chem Ind Ltd 発光ダイオード
JPH07114904A (ja) 1993-10-18 1995-05-02 Hitachi Ltd バックライト光源用蛍光放電灯
JPH07120754A (ja) * 1993-10-26 1995-05-12 Fujikura Ltd 照光モジュール
JPH0732638U (ja) 1993-11-15 1995-06-16 ミネベア株式会社 面状光源装置
JPH07176794A (ja) * 1993-12-17 1995-07-14 Nichia Chem Ind Ltd 面状光源
JP3190774B2 (ja) * 1993-12-24 2001-07-23 株式会社東芝 Ｌｅｄランプ用リードフレーム及びｌｅｄ表示装置
JP2606025Y2 (ja) * 1993-12-24 2000-09-11 日亜化学工業株式会社 発光ダイオード素子
JPH07193281A (ja) 1993-12-27 1995-07-28 Mitsubishi Materials Corp 指向性の少ない赤外可視変換発光ダイオード
US6784511B1 (en) * 1994-01-20 2004-08-31 Fuji Electric Co., Ltd. Resin-sealed laser diode device
US5505986A (en) 1994-02-14 1996-04-09 Planar Systems, Inc. Multi-source reactive deposition process for the preparation of blue light emitting phosphor layers for AC TFEL devices
JPH07225378A (ja) * 1994-02-15 1995-08-22 Asahi Optical Co Ltd Ｌｃｄ照明装置
JPH07235207A (ja) 1994-02-21 1995-09-05 Copal Co Ltd バックライト
JPH07248495A (ja) 1994-03-14 1995-09-26 Hitachi Ltd 液晶表示装置
JPH07253594A (ja) * 1994-03-15 1995-10-03 Fujitsu Ltd 表示装置
JPH07263748A (ja) 1994-03-22 1995-10-13 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子及びその製造方法
US5640216A (en) * 1994-04-13 1997-06-17 Hitachi, Ltd. Liquid crystal display device having video signal driving circuit mounted on one side and housing
JP3329573B2 (ja) 1994-04-18 2002-09-30 日亜化学工業株式会社 Ｌｅｄディスプレイ
JPH07307491A (ja) * 1994-05-11 1995-11-21 Mitsubishi Cable Ind Ltd Ｌｅｄ集合体モジュールおよびその作製方法
JP2979961B2 (ja) 1994-06-14 1999-11-22 日亜化学工業株式会社 フルカラーｌｅｄディスプレイ
JP3116727B2 (ja) 1994-06-17 2000-12-11 日亜化学工業株式会社 面状光源
JP3227059B2 (ja) * 1994-06-21 2001-11-12 株式会社小糸製作所 車輌用灯具
JPH0863119A (ja) 1994-08-01 1996-03-08 Motorola Inc 単色ｌｅｄを用いた全色画像表示装置
JPH0854839A (ja) * 1994-08-09 1996-02-27 Sony Corp カラー画像表示装置
JPH0864860A (ja) * 1994-08-17 1996-03-08 Mitsubishi Materials Corp 色純度の高い赤外可視変換青色発光ダイオード
JP3309939B2 (ja) 1994-09-09 2002-07-29 日亜化学工業株式会社 発光ダイオード
JPH08130329A (ja) * 1994-10-31 1996-05-21 Nichia Chem Ind Ltd Ｌｅｄ照明
US5777350A (en) * 1994-12-02 1998-07-07 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device
JP3127195B2 (ja) * 1994-12-06 2001-01-22 シャープ株式会社 発光デバイスおよびその製造方法
US5710628A (en) * 1994-12-12 1998-01-20 Visible Genetics Inc. Automated electrophoresis and fluorescence detection apparatus and method
JPH08170077A (ja) 1994-12-19 1996-07-02 Hitachi Ltd 蛍光体、その製造方法、発光スクリーン及びそれを用いた陰極線管
JP2735057B2 (ja) 1994-12-22 1998-04-02 日亜化学工業株式会社 窒化物半導体発光素子
WO1996024156A1 (en) * 1995-01-30 1996-08-08 Philips Electronics N.V. Lighting unit
JP3542677B2 (ja) 1995-02-27 2004-07-14 セイコーエプソン株式会社 樹脂封止型半導体装置およびその製造方法
JPH08321918A (ja) * 1995-03-22 1996-12-03 Canon Inc 導光体、該導光体を有する照明装置及び該照明装置を有する情報処理装置
US5623181A (en) * 1995-03-23 1997-04-22 Iwasaki Electric Co., Ltd. Multi-layer type light emitting device
JPH08293825A (ja) * 1995-04-21 1996-11-05 Fujitsu Ltd スペースダイバーシティ受信装置
US5630741A (en) * 1995-05-08 1997-05-20 Advanced Vision Technologies, Inc. Fabrication process for a field emission display cell structure
US5594751A (en) 1995-06-26 1997-01-14 Optical Concepts, Inc. Current-apertured vertical cavity laser
US5825113A (en) * 1995-07-05 1998-10-20 Electric Power Research Institute, Inc. Doubly salient permanent magnet machine with field weakening (or boosting) capability
JPH0927642A (ja) * 1995-07-13 1997-01-28 Clarion Co Ltd 照明装置
JP3120703B2 (ja) * 1995-08-07 2000-12-25 株式会社村田製作所 導電性ペースト及び積層セラミック電子部品
JPH0964325A (ja) * 1995-08-23 1997-03-07 Sony Corp 固体撮像素子とその製造方法
US5798537A (en) * 1995-08-31 1998-08-25 Kabushiki Kaisha Toshiba Blue light-emitting device
US5949751A (en) * 1995-09-07 1999-09-07 Pioneer Electronic Corporation Optical recording medium and a method for reproducing information recorded from same
JPH09116225A (ja) * 1995-10-20 1997-05-02 Hitachi Ltd 半導体発光素子
JP3612693B2 (ja) * 1995-10-31 2005-01-19 岩崎電気株式会社 発光ダイオード配列体及び発光ダイオード
JPH09130546A (ja) * 1995-11-01 1997-05-16 Iwasaki Electric Co Ltd 線状光源用発光ダイオード
JP3476611B2 (ja) * 1995-12-14 2003-12-10 日亜化学工業株式会社 多色発光素子及びそれを用いた表示装置
US5870797A (en) * 1996-02-23 1999-02-16 Anderson; Kent George Vacuum cleaning system
US6600175B1 (en) * 1996-03-26 2003-07-29 Advanced Technology Materials, Inc. Solid state white light emitter and display using same
US5949182A (en) * 1996-06-03 1999-09-07 Cornell Research Foundation, Inc. Light-emitting, nanometer scale, micromachined silicon tips
KR20040111701A (ko) 1996-06-26 2004-12-31 지멘스 악티엔게젤샤프트 발광 변환 소자를 포함하는 발광 반도체 소자
DE19638667C2 (de) * 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
US5684309A (en) * 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
JPH1036835A (ja) 1996-07-29 1998-02-10 Nichia Chem Ind Ltd フォトルミネセンス蛍光体
TW383508B (en) 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
US6608332B2 (en) 1996-07-29 2003-08-19 Nichia Kagaku Kogyo Kabushiki Kaisha Light emitting device and display
IE820328L (en) * 1996-08-15 1983-08-16 Eaton Corp Illumination system
US6004001A (en) * 1996-09-12 1999-12-21 Vdo Adolf Schindling Ag Illumination for a display
US5781363A (en) * 1996-10-15 1998-07-14 International Business Machines Corporation Servo-free velocity estimator for coil driven actuator arm in a data storage drive
US5966393A (en) 1996-12-13 1999-10-12 The Regents Of The University Of California Hybrid light-emitting sources for efficient and cost effective white lighting and for full-color applications
JP4271747B2 (ja) * 1997-07-07 2009-06-03 株式会社朝日ラバー 発光ダイオード用透光性被覆材及び蛍光カラー光源
US5847507A (en) * 1997-07-14 1998-12-08 Hewlett-Packard Company Fluorescent dye added to epoxy of light emitting diode lens
JPH1139917A (ja) * 1997-07-22 1999-02-12 Hewlett Packard Co <Hp> 高演色性光源
US6340824B1 (en) * 1997-09-01 2002-01-22 Kabushiki Kaisha Toshiba Semiconductor light emitting device including a fluorescent material
JP3541709B2 (ja) 1998-02-17 2004-07-14 日亜化学工業株式会社 発光ダイオードの形成方法
US6501091B1 (en) * 1998-04-01 2002-12-31 Massachusetts Institute Of Technology Quantum dot white and colored light emitting diodes
US6105200A (en) * 1998-04-21 2000-08-22 Cooper; Byron W. Can top cleaning device
US5959316A (en) * 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
US6798537B1 (en) * 1999-01-27 2004-09-28 The University Of Delaware Digital color halftoning with generalized error diffusion vector green-noise masks
US6575930B1 (en) * 1999-03-12 2003-06-10 Medrad, Inc. Agitation devices and dispensing systems incorporating such agitation devices
US6513949B1 (en) * 1999-12-02 2003-02-04 Koninklijke Philips Electronics N.V. LED/phosphor-LED hybrid lighting systems
US6538371B1 (en) 2000-03-27 2003-03-25 The General Electric Company White light illumination system with improved color output
AU1142001A (en) * 2000-10-19 2002-04-29 Dsm N.V. Protein hydrolysates
JP2002270020A (ja) * 2001-03-08 2002-09-20 Casio Comput Co Ltd 光源装置
US6536371B2 (en) * 2001-08-01 2003-03-25 One World Technologies, Inc. Rotary direction indicator
WO2004049155A2 (en) 2002-11-27 2004-06-10 Sap Aktiengesellschaft Avoiding data loss when refreshing a data warehouse
EP1681728B1 (en) * 2003-10-15 2018-11-21 Nichia Corporation Light-emitting device
US7318651B2 (en) * 2003-12-18 2008-01-15 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Flash module with quantum dot light conversion
US7083302B2 (en) * 2004-03-24 2006-08-01 J. S. Technology Co., Ltd. White light LED assembly
KR100655894B1 (ko) * 2004-05-06 2006-12-08 서울옵토디바이스주식회사 색온도 및 연색성이 우수한 파장변환 발광장치
US7546032B2 (en) 2004-09-30 2009-06-09 Casio Computer Co., Ltd. Electronic camera having light-emitting unit
JP4679183B2 (ja) * 2005-03-07 2011-04-27 シチズン電子株式会社 発光装置及び照明装置
JP5240959B2 (ja) 2005-11-16 2013-07-17 国立大学法人 香川大学 薬剤とその製造方法
JP4839866B2 (ja) 2006-02-02 2011-12-21 トヨタ自動車株式会社 車両側部構造
EP2000173A2 (en) 2006-03-29 2008-12-10 Tti Ellebeau, Inc. Iontophoretic apparatus
JP4717684B2 (ja) 2006-03-30 2011-07-06 富士通テレコムネットワークス株式会社 コンデンサ充電装置
US20080144821A1 (en) 2006-10-26 2008-06-19 Marvell International Ltd. Secure video distribution
KR100930171B1 (ko) 2006-12-05 2009-12-07 삼성전기주식회사 백색 발광장치 및 이를 이용한 백색 광원 모듈
JP5079379B2 (ja) 2007-04-16 2012-11-21 長谷川香料株式会社 二次沈殿が抑制された精製クロロゲン酸類の製法
WO2008143315A1 (ja) 2007-05-22 2008-11-27 Nec San-Ei Instruments, Ltd. データ記録再生装置
US8119028B2 (en) 2007-11-14 2012-02-21 Cree, Inc. Cerium and europium doped single crystal phosphors
WO2010023840A1 (en) * 2008-08-28 2010-03-04 Panasonic Corporation Semiconductor light emitting device and backlight source, backlight source system, display device, and electronic device using the same
JP5331584B2 (ja) 2009-06-12 2013-10-30 株式会社フジクラ 圧力センサアレイ、圧力センサアレイパッケージ、並びに圧力センサモジュール及び電子部品
JP5441660B2 (ja) 2009-12-15 2014-03-12 日本特殊陶業株式会社 キャパシタの製造方法及びキャパシタ内蔵配線基板
JP5343885B2 (ja) 2010-02-16 2013-11-13 住友電装株式会社 防水機能付き端子金具及び防水コネクタ
WO2012070118A1 (ja) 2010-11-24 2012-05-31 トヨタ自動車株式会社 車両用動力伝達装置

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BR9710792A (pt) 2000-01-11
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CA2262136A1 (en) 1998-02-05
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