CN1471179A - 半导体发光器件 - Google Patents

半导体发光器件 Download PDF

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CN1471179A
CN1471179A CNA031490816A CN03149081A CN1471179A CN 1471179 A CN1471179 A CN 1471179A CN A031490816 A CNA031490816 A CN A031490816A CN 03149081 A CN03149081 A CN 03149081A CN 1471179 A CN1471179 A CN 1471179A
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light
line electrode
electrically conductive
conductive particles
electrode
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Ͳ
筒井毅
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Rohm Co Ltd
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Rohm Co Ltd
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Abstract

一种半导体发光元件(1)，其利用各向异性导电粘合剂(3)安装在基底(2)上，各向异性导电粘合剂(3)具有与热固树脂(31)扩散混合的导电微粒(32)并且布置在一对形成在半导体发光元件(1)的相同表面上的电极(11和11’)与形成在基底(2)上的线电极(21和21’)之间。在面对半导体元件(1)的线电极(21和21’)的一部分表面上形成有凹陷(22和22’)，从而导电微粒(32)稳定地呈现在电极(11和11’)与线电极(21和21’)之间。

Description

半导体发光器件
技术领域
本发明涉及一种半导体发光器件，尤其涉及一种具有半导体发光元件(以下成为发光元件)的半导体发光器件，所述发光元件利用各向异性导电粘合剂通过倒装结合法(flip-chip bonding)结合到基底上。
背景技术
例如，一些蓝色或绿色发光二极管(LED)元件(发光元件)具有这样的结构，其中一对电极，也称为正负电极，形成在相同的表面上。如图5所示，当这种类型的LED元件1安装在基底2上时，首先，将LED元件1利用诸如银膏的粘合剂(未示出)固定在基底2上，然后利用结合线W和W’将形成在LED元件1的顶表面上的一对电极12和12’与形成在基底2上的线电极21和21’相连。在以这种方式制造的半导体发光器件中，当从LED元件1的发光层(活性层)向上发出的光通过其顶表面出来时，从LED元件1的发光层向下发出的光被放置在其底部表面下方的银膏扩散地反射，因此一部分这样的光被向上反射，从而从LED元件1通过其顶表面出来。
在上述传统结构的半导体发光器件中，在LED元件1的顶表面上形成了电流扩散膜13和电极12和12’。这截住了部分发射出的光，造成低的光提取效率。而且，结合线需要折弯具有最低限度或较低限度的弯曲度。这将造成使得器件变小非常困难。
如图6所示，克服这些不便的一个方法是在线电极21和21’上形成凸块B和B’，从而通过这些凸块B和B’，LED元件1通过倒装结合法(flip-chip bonding)结合到基底2上的线电极21和21’上。在这种结构中，没有任何东西在LED元件1的顶表面上，即光通过它从其出来的其表面上，截住发射的光。这有助于增加光提取效率。而且不使用结合线能够使器件变小。
然而，利用凸块的倒装结合法会造成实现结合的地方的周围的机械强度低下，由此导致低的可靠性。而且，凸块需要精确地形成在每个发光元件的电极上或形成在基底上的线电极上的预定位置上。这会降低生产效率，和器件的产量。而且，凸块的厚度对于进一步使器件变小也是不利的。
发明内容
本发明致力于克服上述传统上经历的不便，并且本发明的目的在于提供一种半导体发光器件，该半导体发光器件允许光通过发光元件的顶表面的高的光提取效率，允许器件的进一步减小，在实现结合的地方的周围提供了高的机械强度，允许安装发光元件时具有充分的边缘(margin)，并且允许高的生产效率和高的器件产量。
本发明的另一目的是提供一种能够稳定地提供高的导电率的半导体发光器件。
为实现上述目的，根据本发明的一个方面，一种半导体发光器件包括半导体发光元件和具有形成在其上的线电极的基底，该半导体发光元件具有一对形成在其相同表面上的电极，所述半导体发光元件利用各向异性导电粘合剂安装在基底上，所述各向异性导电粘合剂具有与热固树脂分散混合的导电微粒且布置在所述一对电极和线电极之间，另外，在每个线电极面对发光元件的一部分表面上形成有凹陷，从而导电微粒稳定地呈现在所述一对电极和线电极之间。这在实现结合的地方周围提供了高的机械强度，允许高的生产率，由此实现高的产量，并保证了稳定的导电率。
根据本发明的另一方面，提供一种半导体发光器件，包括半导体发光元件和具有形成在其上的线电极的基底，该半导体发光元件具有形成在其相同表面上的一对电极，所述半导体发光元件利用各向异性导电粘合剂安装在基底上，所述各向异性导电粘合剂具有与热固树脂分散混合的导电微粒且布置在所述一对电极和线电极之间，另外，导电微粒与线电极直接接触的总面积占线电极面对发光元件的区域的10％-60％。这实现了高的生产率，并由此实现高的产量，在线电极和粘合剂之间提供了高的结合强度，并保证了稳定的导电率。
附图说明
从下面结合附图对优选实施例的详细描述中，本发明的上述和其他目的和特征将变得更加清楚，其中：
图1A和图1B为本发明第一个实施例的半导体发光器件的截面图；
图2A到图2D为形成在线电极内的凹陷实例的平面图；
图3为形成在线电极内的凹陷的实例的截面图；
图4为本发明第二实施例的半导体发光器件的平面图；
图5为传统半导体发光器件的透视图；
图6为另一传统半导体发光器件的截面图。
具体实施方式
本发明的发明者在提高低机械强度和低生产率的方法的领域内已经进行了深入的研究，所述低机械强度和低生产率是传统地当通过倒装结合法制造半导体发光器件且考虑到通过发光元件的顶表面的光的有效提取和器件的小型化时所遇到的。通过这种研究，本发明的发明者发现，通过利用各向异性导电粘合剂将发光元件安装在基底上，可以实现高的充分的机械强度和实现高的生产率，由此实现高的产量，并且通过在线电极上形成凹陷，当对各向异性导电粘合剂施加压力时，可以有效地防止导电微粒从线电极上面脱离，并且由此实现满意的导电率。这些发现体现在本发明的第一实施例中。
下面参考附图描述本发明第一实施例的半导体发光器件。图1A和图1B是第一实施例的半导体发光器件的截面图。如图1A所示，LED元件(发光元件)1具有一对形成在其底表面上的电极11和11’。为了防止电极11和11’之间短路，在它们的边缘周围形成有保护膜14，保护膜14为50-300埃厚并由SiO2，SiN等制成。另一方面，在基底2上形成有线电极21和21’。线电极21和21’分别具有形成在它们面对电极11和11’的顶表面一部分上的凹陷。在线电极21和21’的上面和周围涂覆有浆糊形式的各向异性导电粘合剂3。各向异性导电粘合剂3具有导电微粒32，导电微粒32与热固树脂31扩散混合(dispersion-mixed)。当LED元件1向下移动时，其就被安装在基底2上，且各向异性导电粘合剂3位于它们之间。在这种情况下，电极11和11’仍然分别与线电极21和21’隔离。
然后，如图1B所示，利用预定的压力将LED元件1朝着基底2压下去。这会导致一个最大的压力，该最大的压力将被分别施加在位于LED元件1的底表面上的电极11和11’与线电极21和21’之间。结果，位于电极11和11’与线电极21和21’之间的各向异性导电粘合剂3内的导电微粒32将相互接触，由此允许电极11和11’分别与线电极21和21’导电。另一方面，除了这些位置，导电微粒32不互相接触，由此仍保持绝缘。这里，当压下LED元件1时，形成在线电极21和21’面对LED元件1的一部分表面内的凹陷22和22’将使各向异性导电粘合剂3内的导电微粒32脱离线电极21和21’与电极11和11’之间的可能性最小。这有助于在这些电极之间维持导电微粒32的数量，从而当施加压力时有充分数量的导电微粒32相互接触。在这种情况下，可以分别在线电极21和21’与电极11和11’之间实现满意的导电率。现在，通过施加热量固化热固树脂，以便永久地保持这种状态。
凹陷22和22’可以形成在线电极21和21’上面对LED元件1的任何位置上，优选形成在线电极21和21’上面对电极11和11’的位置。因此，形成线电极21和21’内的凹陷22和22’的位置根据线电极21和21’的布置以及LED元件1的电极11和11’的形状改变。图2A到图2D示出了当在平面图内看时，线电极21和21’和凹陷22和22’相对于虚线所示的LED元件1的底表面和电极11和11’的形状。无需说明，可以形成任何数量的凹陷；例如可以在一个线电极内形成两个或更多个凹陷。为了将LED元件1稳定地固定在基底2上并且不倾斜，优选的是，将凹陷形成在线电极上面对LED元件1底表面的不同拐角的至少三个位置上，由此在这三个位置支撑LED元件1。
凹陷22和22’可以具有任何的深度，但是，如果它们太深，当施加压力时，电极之间的力可能不足以使导电微粒32相互接触。为了避免这样的情况，如图3所示，优选的是凹陷22和22’的深度d小于导电微粒32的微粒直径D。另一方面，如图凹陷22和22’的深度太浅，当施加压力时，导电微粒32可能会从电极21和21’上面脱离。为了避免这样的情况，优选的是凹陷22和22’的深度d大于导电微粒32的微粒直径D的1/10。凹陷22和22’可以具有任何传统的截面形状，例如矩形，圆锥形，球形等其他形状。在这些形状中，矩形是优选的形状，因为在施加压力的情况下能够有效地防止导电微粒32的脱离并且容易制成。
这个实施例中使用的各向异性导电粘合剂可以是任何传统的类型，该各向异性导电粘合剂具有与热固树脂扩散混合的导电微粒。导电微粒的实例包括(例如举出几种)镀有Ni或Au的球形树脂微粒和Ag微粒。微粒直径的优选范围为3μm到10μm。热固树脂的例子包括(例如举出几种)环氧树脂，硅树脂，丙烯酸树脂和不饱和的聚脂树脂。在这些树脂中，环氧树脂是优选的，因为其强度和耐热性。优选的是，按重量比计，将大约1％-30％，更优选的是将大约1％-20％的导电微粒与热固树脂扩散混合。
施加给LED元件的压力适当地确定以便适合所使用的各向异性导电粘合剂的类型和量，压力的典型范围为大约1kg/mm2到50kg/mm2。加热固化热固树脂的优选条件为加热温度的范围为100-300℃及加热时间的范围为10-120s。
各向异性导电粘合剂可以为浆糊的形式或片状的形式。在使用的粘合剂是片状的情况下，可以使用与LED元件大小相同的粘合剂片。然而，将这种粘合剂片精确地放置在基底上的预定位置上费时和麻烦。为了避免这种情况，如下所述，通常在基底上放置一个粘合剂片，该粘合剂片大到能够几乎覆盖基底的整个表面。这导致从发光元件发出的光的一部分被片状各向异性导电粘合剂吸收，并导致低的光提取效率。为此，优选使用糊状的各向异性导电粘合剂并且仅将它涂覆到基底上需要出现的位置上。
这个实施例中所用的发光元件可以是任何类型的，只要它具有一对形成在其相同表面上的电极，具体的例子包括使用了蓝宝石基底的蓝色和绿色LED元件。
本实施例的半导体发光器件可以通过传统已知的制造工艺制造。例如，在所使用的各向异性导电粘合剂为糊状的情况下，首先使用销状物或分配器将粘合剂涂覆到发光元件放置到基底上的每一部分上，所述基底具有形成在其上的多个线电极，然后将发光元件放置到粘合剂上。然后，在上述按压条件下压发光元件，从而发光元件上的电极与基底上的线电极导通，同时通过施加热量固化粘合剂。接下来，将发光元件密封在透明或半透明的树脂内，并且然后将基底切割成分离的单个发光器件。
另一方面，在所使用的各向异性导电粘合剂为片状的情况下，首先将单个粘合剂片放置在基底上以便覆盖其表面，然后将发光元件放置到要放置发光元件的每一部分上。然后，压发光元件，以便发光元件上的电极与基底上的线电极导通，并且同时通过施加热量固化粘合剂。接下来，将发光元件密封在透明或半透明的树脂内，并且然后将基底切割成分离的单个发光器件。
接下来描述本发明第二实施例的发光器件。本实施例的主要特征在于导电微粒与线电极直接接触的总面积占线电极面对发光元件的区域的10％-60％。下面参考附图描述第二实施例的半导体发光器件。
图4是本实施例半导体发光器件的平面图。在图中，虚线表示结合面和LED元件1的电极11和11’的轮廓。线电极21和21’上的阴影表示它们面对LED元件1的部分，阴影区域内的空心圆表示导电微粒32与线电极21和21’直接接触的区域。这里，重要的是，导电微粒32的(空心圆所示)的总接触面积占阴影区域的10％-60％。如果总接触面积的比例小于10％，LED元件1上的电极11和11’与线电极21和21’之间的导电率可能不充分。另一方面，如果总的接触面积比例超过60％，虽然实现了电极之间的充分的导电率，但是结合电极的结合强度可能会很弱，从而导致各向异性导电粘合剂3从线电极21和21’的表面上脱离。更优选的总接触面积的比例为20％-40％。
例如，通过调整微粒直径和与热固树脂扩散混合的导电微粒32的量，通过调整施加给LED元件1的压力，或通过如第一实施例所述在线电极21和21’内形成凹陷22，可以使上述总接触面积的比例位于在上面给出的范围内。
顺便说明的是，导电微粒32的接触面积通过下面的方式测量。将完整形式的半导体发光器件沿线电极的表面分开，然后在扫描电子显微镜上测量暴露在面对线电极的固化的各向异性导电粘合剂表面上的导电微粒32的面积。
本实施例中的发光元件和各向异性导电粘合剂与第一实施例中的相同。

Claims (8)

1、一种半导体发光器件，包括半导体发光元件和具有形成在其上的线电极的基底，所述半导体发光元件具有一对形成在其相同表面上的电极，所述半导体发光元件利用布置在所述一对电极与所述线电极之间的各向异性导电粘合剂安装在基底上，所述各向异性导电粘合剂具有与热固树脂分散混合的导电微粒，
其中在每个线电极面对发光元件的一部分表面上形成有凹陷，从而导电微粒稳定地呈现在所述一对电极与所述线电极之间。
2、根据权利要求1所述的半导体发光器件，其中形成在每个线电极表面上的凹陷的深度小于导电微粒的微粒直径。
3、根据权利要求1所述的半导体发光器件，其中形成在每个线电极表面上的凹陷的深度大于导电微粒的微粒直径的1/10。
4、根据权利要求1所述的半导体发光器件，其中所述各向异性导电粘合剂按重量计含有1％-30％的与热固树脂扩散混合的导电微粒。
5、根据权利要求1所述的半导体发光器件，其中所述导电微粒的微粒直径在3μm到10μm的范围内。
6、根据权利要求1所述的半导体发光器件，其中所述基底为蓝宝石基底。
7、一种半导体发光器件，包括半导体发光元件和具有形成在其上的线电极的基底，所述半导体发光元件具有一对形成在其相同表面上的电极，所述半导体发光元件利用布置在所述一对电极与所述线电极之间的各向异性导电粘合剂安装在基底上，所述各向异性导电粘合剂具有与热固树脂分散混合的导电微粒，
其中在其上导电微粒与线电极直接接触的总面积占在其上线电极面对发光元件的区域的10％-60％。
8、根据权利要求7所述的半导体发光器件，其中在其上导电微粒与线电极直接接触的总面积占在其上线电极面对发光元件的区域的20％-40％。
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CN103378269A (zh) * 2012-04-23 2013-10-30 日亚化学工业株式会社 发光装置
CN103378269B (zh) * 2012-04-23 2017-03-01 日亚化学工业株式会社 发光装置
CN106233479A (zh) * 2014-03-12 2016-12-14 迪睿合株式会社 发光装置
TWI669837B (zh) * 2014-03-12 2019-08-21 日商迪睿合股份有限公司 發光裝置
CN106233479B (zh) * 2014-03-12 2019-11-22 迪睿合株式会社 发光装置
CN105493297A (zh) * 2015-05-21 2016-04-13 歌尔声学股份有限公司 微发光二极管的转移方法、制造方法、装置和电子设备
CN105493297B (zh) * 2015-05-21 2018-09-11 歌尔股份有限公司 微发光二极管的转移方法、制造方法、装置和电子设备
CN104821368A (zh) * 2015-05-25 2015-08-05 叶志伟 一种倒装led的封装结构
CN107610602A (zh) * 2016-07-11 2018-01-19 三星显示有限公司 像素结构、显示设备以及制造该像素结构的方法

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