CN1464598A - High-power semiconductor laser frequency converter - Google Patents
High-power semiconductor laser frequency converter Download PDFInfo
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- CN1464598A CN1464598A CN02121545A CN02121545A CN1464598A CN 1464598 A CN1464598 A CN 1464598A CN 02121545 A CN02121545 A CN 02121545A CN 02121545 A CN02121545 A CN 02121545A CN 1464598 A CN1464598 A CN 1464598A
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Abstract
The present invention relates to a converter plant of semiconductor laser with large power. The device includes power supply pumping source laser crystal and resonant cavity made of cavity mirror, in which the pumping source is arranged in the resonant cavity, the laser crystal is arranged between the pumping source and the cavity mirror used as output light, and the power supply is electric interlocked with the pumping source, characterized by that, the said pumping source is a array of quantum well semiconductor laser core sheet pumped by the power supply, the array of quantum well semiconductor laser core sheet is coated at the outer side thereof with membrane highly inversing over wave band output by the pumping source as another cavity mirror. The device applies quantum well semiconductor laser core sheet array to pump optical crystalloid, and generate new laser oscillations or proceed frequency transposition, so as to overcome the drawback for traditional semiconductor laser that frequency multiplication is lower and output laser power is small. Also, it provides simple structure, and can provides laser output with highly efficiency, superpower and high beam molar.
Description
Technical field
The present invention relates to a kind of laser, particularly relate to a kind of employing quantum-well semiconductor laser chip and produce high light beam quality, high-power semiconductor laser frequency converter as pumping source.
Background technology
Conventional semiconductor laser (hereinafter to be referred as LD) is that electric pump semiconductor chip array produces laser, through optical fiber coupling output, the laser output that the laser pumping laser crystal of utilization output or nonlinear optical crystal can obtain required various wavelength, and raising beam quality and power output, described in " High-efficiency; High-power; OPO-based RGB source " of record on the CLEO 2001: the laser (light path such as Fig. 2) of LD (Laser Diode) side pump Nd:YLF output 1047nm, this laser is through image intensifer, the incident frequency-doubling crystal, the laser of output 524nm.High reflective mirror 1 and 4 paired in this device forms the multichannel of 1047nm by Nd:YLF, collimation fundamental frequency light (1047nm), improve the absorptivity of fundamental frequency light (1047nm) in nonlinear optical crystal, thereby improve frequency-doubling conversion efficiency, shg efficiency is 23% in this device; But because the beam quality of LD (Laser Diode) chip array itself is bad, make that the efficient of its pumping Nd:YLF output laser is not high, only be 19.5%, though and the laser (1047nm) of output is through light path gain, collimation, but the pump optical loss is too many, shg efficiency is still not high, and this apparatus structure complexity, is difficult to regulate.
Summary of the invention
The objective of the invention is to overcome traditional side launching semiconductor laser because beam quality is poor, and power is little, can not can only export the shortcoming of laser as pumping source pumping laser crystal directly as laser output.Poor for the beam quality that overcomes semiconductor laser output, thereby cause the low deficiency of conversion efficiency., high light beam quality efficient and high power laser output in order to realize, the present invention adopts power supply pumping plated film quantum well face battle array material directly to export laser, or this laser produces the laser difference of single or several wave bands or the high-power semiconductor laser frequency converter of exporting simultaneously through monolithic or polylith laser crystal.
The object of the present invention is achieved like this: a kind of high-power semiconductor laser frequency converter provided by the invention comprises power supply, pumping source, laser crystal and the resonant cavity of being made up of the chamber mirror; Wherein pumping source is placed in the resonant cavity, and laser crystal is placed in pumping source and as between the chamber mirror used of output light, power supply is electrically connected with pumping source; It is characterized in that: described pumping source is a quantum-well semiconductor laser chip array by the power supply pumping, the relative resonator mirror setting of the face of the output light of this quantum-well semiconductor laser chip array, its back side are coated with the high anti-film of wave band in pumping source output another piece chamber mirror as resonant cavity.
Also be included in the light path and settle contract a beam system and convex lens, the position of the beam system that wherein contracts is at the waist place of first block of outgoing mirror output light, and the focal position of convex lens overlaps with the waist of the light of exporting from the beam system that contracts.
Also be included in the light path and settle 1 or 1 with upper reflector, decide according to the light path actual design its position.
Also be included in and settle 2 in the light path with epicoele mirror another piece chamber mirror as resonant cavity, this chamber mirror comprises flat mirror, plano-concave mirror, planoconvex lens, grating or Fabry-Perot etalon tool.
Described quantum-well semiconductor laser chip array is the chip of vertical cavity surface emitting laser.
Described quantum-well semiconductor laser chip array can be a N dimension linear array, also can be the face battle array of M * N dimension vertical cavity surface emission, and wherein M, N are positive integer.
Described laser crystal can be an optical crystal, also can be nonlinear optical crystal.
Described laser crystal comprises Nd:YAG, Nd:YVO
4, Nd:YLE, Nd:YAG or Ti:Al
3O
3
Described nonlinear optical crystal comprises barium metaborate (BBO), three lithium borates (LBO), titanyl potassium phosphate (KTP), periodic polarized titanyl potassium phosphate (PPKTP), periodic polarized lithium tantalate (PPLT), periodic polarized lithium niobate (PPLN), period polarized potassium niobate (PPKNLN), potassium niobate (KN), titanium chlorine Macquer's salt (KTA).
Described another piece chamber mirror can be flat mirror, plano-concave mirror, planoconvex lens, grating or Fabry-Perot etalon tool.
Described nonlinear optical crystal is one at least, carries out the non-linear frequency conversion in the chamber, exports the light of corresponding wave band simultaneously.
Adopt quantum-well semiconductor laser chip array to make pumping source in this device, optical crystal is made frequency-changer crystal; Electric pump Pu quantum-well semiconductor laser chip array is directly exported laser or with this laser pump-coupling optical crystal, and by the different laser of one or more parametric processes outputs.
Advantage of the present invention:
A kind of high-power semiconductor laser frequency converter provided by the invention adopts quanta trap semiconductor vertical cavity surface emitting laser chip array directly to export laser, perhaps as pumping source pump optical crystal output laser, it is poor to have overcome in original technology pump light beam quality, can not export as laser, can only be big as pumping source and the introducing that causes pump optical loss, conversion efficiency is low, the shortcoming that device is complicated, the N dimension linear array that generates or its power of laser array of M * N (M, N are positive integer) dimension face battle array can reach several watts to tens watts, realized high light beam quality, its M
2The factor approaches 1; High conversion efficiency reaches＞=and 30%; High power can reach the laser output of hectowatt.And can be used for continuous wave, quasi c. w. output, and opened up wide prospect for high light beam quality, high conversion efficiency, high-power laser technology practicability, can be widely used in fields such as military affairs, scientific research, amusement, medical treatment, industry.
Description of drawings
Fig. 1 is the laser optical path figure of LD (Laser Diode) side pump Nd:YLF output 1047nm
Fig. 2 is a high-power semiconductor laser frequency converter structural representation of the present invention
Fig. 3 is the index path (continuous wave) that the present invention has the laser frequency converter output blue light of 6 dimension linear array quantum-well semiconductor laser chip arrays
Fig. 4 is the index path (continuous wave) that the present invention has the face battle array laser frequency converter output infrared laser of 4 * 5 dimension vertical cavity surface emissions
Fig. 5 is the index path of a kind of embodiment of laser aid output Ultra-Violet Laser of the present invention
Fig. 6 is a kind of embodiment index path of laser aid output tuning visible light of cycle of the present invention
Fig. 7 is the index path (continuous wave) that laser aid of the present invention is exported blue light and tunable infrared laser simultaneously
Fig. 8 is the index path (continuous wave) that laser aid of the present invention is exported tunable infrared laser
Fig. 9 is the index path (quasi c. w.) of laser aid output blue light of the present invention
The drawing explanation:
2-pumping source (quantum-well semiconductor laser chip array); 3,7-optical crystal;
1,4,6,8-chamber mirror; The 5-convex lens
The 9-Q switch; The 10-beam system that contracts;
The 11-speculum;
Embodiment
Make the high-power semiconductor laser frequency converter of an output continuous wave blue light according to the light path of Fig. 1 and Fig. 3.
This converter plant comprises power supply, pumping source 2, laser crystal 3, and chamber mirror 1,4, wherein pumping source 2 is 6 commercially available quantum-well semiconductor laser chip arrays of tieing up, optical crystal 3 is selected lbo crystal for use, is of a size of 4 * 4 * 10mm
3, lbo crystal is θ=90 °, φ=62.7 ° direction cutting, chamber mirror 1 be plated film on the lateral surface of the quantum-well semiconductor laser chip arrays of 6 dimensions, its plated film is high anti-(HR) film of 490nm, chamber mirror 4 is selected flat mirror for use, high (HT) film thoroughly of two-sided plating 490nm.Its lumen mirror 1 and chamber mirror 4 constitute resonant cavity, and optical crystal 3 is placed near the focus of quanta trap semiconductor vertical cavity surface emitting laser chip array 2 output laser, and commercially available power supply (not shown) is electrically connected with pumping source 2; Electric pump quanta trap semiconductor vertical cavity surface emitting laser chip array 2 end faces are directly exported laser, and with this laser pumping optical crystal 3, the fluorescence that sends vibrates in chamber mirror 1 and 4 resonant cavitys that constitute respectively, from chamber mirror 4 output laser.Described optical element is fixed on the optics tool seat, and optics tool seat is fixed on the optical table.
Quanta trap semiconductor vertical cavity surface emitting laser chip array 2 output wavelength under power supply pumping effect is the laser of 980nm, this laser carries out frequency multiplication through nonlinear optical crystal 3, regulate chamber mirror 4 and chamber mirror 1, continuous wave blue light at chamber Jing4Chu output 490nm, power output can reach 3W, and conversion efficiency is greater than 30%.
Make the high-power semiconductor laser frequency converter of the continuous infrared waves of output according to the light path of Fig. 1 and Fig. 4.
The similar of this converter plant and embodiment 1, difference are that pumping source 2 is 4 * 5 dimension quantum-well semiconductor laser chip arrays; Chamber mirror 1 adopts coating process to be produced on the lateral surface of this pumping source 2, and its plated film is 980nmHR, 1400nm-1800nm HR, 2150nm-3250nm HR film; Chamber mirror 4 is selected flat mirror for use, and chamber mirror 4 is 980nm HR near a side plated film of optical crystal, 2150nm-3250nm HR, two-sided 1400nm-1800nm HT; Optical crystal 3 is selected the PPLN crystal for use, is of a size of 0.5 * 5 * 20mm
3, the tuning cycle is 2.79 μ m-2.87 μ m.Chamber mirror 1 and chamber mirror 4 constitute resonant cavity, optical crystal 3 is placed near the focus of quanta trap semiconductor vertical cavity surface emitting laser chip array 2 output laser, pumping source pumping quanta trap semiconductor vertical cavity surface emitting laser chip array 2 end faces are directly exported laser, or with this laser pumping optical crystal 3, the fluorescence that sends vibrates in chamber mirror 1 and 4 resonant cavitys that constitute respectively, from chamber Jing4Chu output laser.Described optical element is fixed on the optics tool seat, and optics tool seat is fixed on the optical table.
The laser of quantum-well semiconductor laser chip array 2 output 980nm, pumping PPLN, the fluorescence that produces vibrates in the resonant cavity that chamber mirror 1 and chamber mirror 4 are formed, tuning performance period by the position of adjusting the PPLN crystal, at the 10W continuous wave infrared laser of chamber Jing4Chu output 1400nm-1800nm, conversion efficiency is greater than 30%.
Make the high-power semiconductor laser frequency converter of a continuous ultraviolet waves of output according to the light path of Fig. 1 and Fig. 5.
This converter plant comprises pumping source, laser crystal, and the chamber mirror, wherein pumping source 2 is 5 * 6 dimension electric pump quantum-well semiconductor laser chip arrays, and optical crystal 3 is selected lbo crystal for use, and lbo crystal is of a size of 3 * 3 * 10mm
3, be θ=90 ℃, φ=62.7 ℃ direction cutting; Optical crystal 7 is selected lbo crystal for use, and LBO is of a size of 4 * 4 * 10mm
3, be θ=90 ℃, φ=37 ℃ direction cutting, the angle tuning scope of lbo crystal is 29.6 ℃-45.7 ℃; Mirror 1 end face coating in chamber is 600nm HR; Chamber mirror 4 is selected flat mirror for use, and chamber mirror 4 is 600nm HR near a plated film of crystal 3, two-sided 300nm HT; Chamber mirror 6 is selected flat mirror for use, and plated film is the one side 400nm HR near crystal 7, two-sided 300nm HT; Chamber mirror 8 is selected flat mirror for use, and plated film is the one side 300nm HR near crystal 7, two-sided 400nmHT; Chamber mirror 1 and chamber mirror 4, chamber mirror 6 and chamber mirror 8 constitute resonant cavity; Optical crystal 3 is placed near the focus of quanta trap semiconductor vertical cavity surface emitting laser chip array 2 output laser, optical crystal 7 is placed near the focus of the resonant cavity that chamber mirror 6 and chamber mirror 8 constitute, pumping source pumping quanta trap semiconductor vertical cavity surface emitting laser chip array 2 end faces are directly exported laser, with this laser pumping optical crystal 3, the fluorescence that sends vibrates in chamber mirror 1 and 4 resonant cavitys that constitute respectively, from chamber Jing4Chu output laser.Described optical element is fixed on the optics tool seat, and optics tool seat is fixed on the optical table.
The laser of quanta trap semiconductor vertical cavity surface emitting laser chip array 2 output 600nm, through lbo crystal 3I class coupling frequency multiplication output ultraviolet light, this laser is through the beam system 10 that the contracts bundle that contracts, be incident to lbo crystal 7 after focusing on through convex lens 5 again, in the chamber that flat mirror 6 peaceful mirrors 8 are formed, carry out optical parametric oscillation, just can realize the output of angle tuning ultraviolet.Regulate lbo crystal 3 and chamber mirror 4, at the ultraviolet light of chamber Jing4Chu output 300nm; Regulate the angle of lbo crystal 7, at the continuous wave Ultra-Violet Laser of chamber Jing8Chu output 50nm-400nm, power can reach 15W, and conversion efficiency is greater than 30%.
Make a high-power semiconductor laser frequency converter of exporting visible tunable laser according to the light path of Fig. 6, comprise quanta trap semiconductor vertical cavity surface emitting laser chip array 2, optical crystal 3,7, chamber mirror 1,4,6,8, the beam system 10 that contracts, convex lens 5.
The similar of this converter plant and embodiment 3, different is that pumping source is 6 dimension quantum-well semiconductor laser chip arrays 2, mirror 1 plated film in chamber is 900nm HR; Chamber mirror 4 is selected flat mirror for use, and chamber mirror 4 is 900nm HR facing to a plated film of crystal, and double-sided coating is 450nm HT; Chamber mirror 6 is selected flat mirror for use, and plated film is two-sided 450nm HT, and a plated film of close crystal is 450nm HR; Chamber mirror 8 is selected flat mirror for use, and a plated film of crystal is 450nm HR, double-sided coating 500nm-600nm HT; Optical crystal 3 is selected lbo crystal for use, and lbo crystal is of a size of 4 * 4 * 10mm
3, be θ=90 °, φ=62.7 ° direction cutting; Optical crystal 7 is selected the PPLN crystal for use, is of a size of 0.5 * 5 * 20mm
3, the cycle tuning range of PPLN crystal is 27.9 μ m-28.7 μ m, the 0.2mm:10 that is spaced apart between each cycle is 3: 1 the beam system that contracts; The 5th, convex lens, its focal length are 50mm; Described optical element is fixed on the optics tool seat, and optics tool seat is fixed on the optical table.
Comprise quanta trap semiconductor vertical cavity surface emitting laser chip array 2, optical crystal 3,7, chamber mirror 1,4,6,8, the beam system 10 that contracts, convex lens 5.
The laser of quanta trap semiconductor vertical cavity surface emitting laser chip array 2 output 900nm, laser through LBO3 crystal I class coupling frequency multiplication output 450nm, this laser is through the beam system 10 that the contracts bundle that contracts, focus on back incident PPLN crystal 7 through convex lens 5 again, in the average chamber that flat mirror 6 peaceful mirrors 8 are formed, carry out parametric oscillation, thereby the laser of output 500nm-600nm, change the PPLN position, thereby change the cycle of PPLN, but just tuning visible light output performance period, power output can reach 3W, and conversion efficiency is greater than 30%.
Make a high-power semiconductor laser frequency converter of exporting multi-wave band laser according to the light path of Fig. 7, comprise quanta trap semiconductor vertical cavity surface emitting laser chip array 2, optical crystal 3,7, chamber mirror 1,4.
This converter plant comprises pumping source, laser crystal, and the chamber mirror, wherein pumping source is 6 dimension electric pump quantum-well semiconductor laser chip arrays 2; Optical crystal 3 is selected the PPLN crystal for use, is of a size of 0.5 * 5 * 20mm
3, the tuning cycle is 27.9 μ m-28.7 μ m; Optical crystal 7 is selected lbo crystal for use, is of a size of 4 * 4 * 10mm
3 Mirror 1 plated film in chamber is 980nm HR, and chamber mirror 4 is selected flat mirror for use, and chamber mirror 4 is 980nm HR near a side plated film of optical crystal, 1400nm-1800nm HR, double-sided coating 2154nm-3256nm HT.Described optical element is fixed on the optics tool seat, and optics tool seat is fixed on the optical table.
The laser of quanta trap semiconductor vertical cavity surface emitting laser chip array 2 output 980nm, directly act on PPLN3 and LBO7 simultaneously, the laser of output carries out frequency-doubled conversion and parametric oscillation respectively in the resonant cavity that chamber mirror 1 and chamber mirror 4 are formed, export the 490nm contineous blue light of 1.5w and the 1400nm-1800nm continuous wave infrared light of 1.5W simultaneously, conversion efficiency is greater than 30%.
Make the high-power semiconductor laser frequency converter of an output multi-wave band laser according to the light path of Fig. 8.
This converter plant comprises pumping source 2, laser crystal 3,7, and chamber mirror 1,4 and 8, wherein pumping source is that 6 * 20 dimension electric pump quantum-well semiconductor laser chip arrays, 2 optical crystals 3 are selected the PPLN crystal for use, is of a size of 0.5 * 5 * 20mm
3, the tuning cycle is 27.9 μ m-28.7 μ m, is spaced apart 0.2mm between each cycle; Optical crystal 7 is selected lbo crystal for use, is of a size of 4 * 4 * 10mm
3, cut direction is θ=60 °, φ=0 °, and the angle tuning scope is 50 °-66 °; Chamber mirror 1 end and plated film is 980nm HR; Chamber mirror 4 is selected flat mirror for use, and chamber mirror 8 is the cylindrical mirror group that 6 cylindrical mirrors are formed, and chamber mirror 4 is 980nm HR near a side plated film of optical crystal, 1600nm-1800nm HR, and mirror group 8 concave surface plated films in chamber are 800nm-900nm HR; Described optical element is fixed on the optics tool seat, and optics tool seat is fixed on the optical table.
The laser of quanta trap semiconductor vertical cavity surface emitting laser chip array 2 output 980nm, directly act on PPLN3, in the resonant cavity of chamber mirror 1 and chamber mirror 4 compositions, carry out parametric oscillation, the infrared laser of output 1400nm-1800nm, 6 reflections enter in the resonant cavity of being made up of chamber mirror 4 and chamber mirror 8 this laser through the chamber mirror, through lbo crystal 7H class coupling frequency multiplication, export the tunable continuous infrared light of 800nm-900nm respectively from each chamber mirror of chamber mirror group 8, therefore, just form several continuous wave tunable lasers of exporting 800nm-900nm simultaneously, power can reach 50W, and conversion efficiency is greater than 30%.
Make the high-power semiconductor laser frequency converter of a quasi-continuous blue light of output according to the light path of Fig. 1.
This converter plant comprises pumping source, laser crystal, and the chamber mirror, wherein pumping source is 6 dimension electric pump quantum-well semiconductor laser chip arrays 2; Optical crystal 3 is selected lbo crystal for use, is of a size of 4 * 4 * 10mm
3, lbo crystal is θ=90 ℃, φ=62.7 ℃ direction cutting; Mirror 1 plated film in chamber is 490nm HR, and chamber mirror 4 is selected flat mirror for use, two-sided plating 490nm HT; Chamber mirror 1 and 4 constitutes resonant cavity, optical crystal 3 is placed near the focus of quanta trap semiconductor vertical cavity surface emitting laser chip array 2 output laser, pumping source pumping quanta trap semiconductor vertical cavity surface emitting laser chip array 2 end faces are directly exported laser, with this laser pumping optical crystal 3, the fluorescence that sends vibrates in chamber mirror 1 and 4 resonant cavitys that constitute, from chamber Jing4Chu output laser.Described optical element is fixed on the optics tool seat, and optics tool seat is fixed on the optical table.
Light path according to Fig. 9 is made a full-solid-state blue laser, comprises quanta trap semiconductor vertical cavity surface emitting laser chip array 2, optical crystal 3, chamber mirror 1,4, Q switching 9.
Quanta trap semiconductor vertical cavity surface emitting laser chip array 2 is exported 980nm laser under power supply pumping effect, this laser carries out frequency multiplication through nonlinear optical crystal 3, transfer Q with Q switching 9, regulate chamber mirror 4 and chamber mirror 1, at the quasi c. w. blue light of chamber Jing4Chu output 490nm, power output can reach 1.5W.Conversion efficiency is greater than 30%.
Claims (9)
1. a high-power semiconductor laser frequency converter comprises power supply, pumping source, laser crystal and the resonant cavity of being made up of the chamber mirror; Wherein pumping source is placed in the resonant cavity, and laser crystal is placed in pumping source and as between the chamber mirror used of output light, power supply is electrically connected with pumping source; It is characterized in that: described pumping source is a quantum-well semiconductor laser chip array by the power supply pumping, the relative harmonious chamber mirror setting of shaking of the face of the output of this quantum-well semiconductor laser chip array, its back side are coated with the high anti-film of wave band in pumping source output another piece chamber mirror as resonant cavity.
2. by the described high-power semiconductor laser frequency converter of claim 1, it is characterized in that: also be included in the light path and settle contract a beam system and convex lens, wherein contract the position of beam system at the waist place of first outgoing mirror output light, and the focal position of convex lens overlaps with the waist of the light of exporting from the beam system that contracts.
3. by the described high-power semiconductor laser frequency converter of claim 1, it is characterized in that: also be included in and settle 1 or 1 with upper reflector in the light path, decide according to the light path actual conditions its position.
4. by the described high-power semiconductor laser frequency converter of claim 1, it is characterized in that: also be included in and settle 2 in the light path with epicoele mirror another piece chamber mirror as resonant cavity, this chamber mirror comprises flat mirror, plano-concave mirror, planoconvex lens, grating or Fabry-Perot etalon.
5. by the described high-power semiconductor laser frequency converter of claim 1, it is characterized in that: described quantum-well semiconductor laser chip array is the chip of vertical cavity surface emitting laser.
6. by claim 1,2,3,4 or 5 described high-power semiconductor laser array converter plants, it is characterized in that: described quantum-well semiconductor laser chip array is a N dimension linear array, or M * N dimension face battle array, and wherein M, N are positive integer.
7. by the described high-power semiconductor laser array of claim 1 converter plant, it is characterized in that: described laser crystal is at least one; It can be an optical crystal, or nonlinear optical crystal.
8. the described high-power semiconductor laser array of claim 1 converter plant, it is characterized in that: described laser crystal comprises Nd:YAG, Nd:YVO
4, Nd:YLF, Yb:YAG or Ti:Al
3O
3
9. the described high-power semiconductor laser array of claim 1 converter plant, it is characterized in that: described nonlinear optical crystal comprises: BBO, LBO, KTP, PPKTP, PPLT, PPLN, PPKN, KTA, KN, LN or unpolarized crystal.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021215456A CN1200491C (en) | 2002-06-25 | 2002-06-25 | High-power semiconductor laser frequency converter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021215456A CN1200491C (en) | 2002-06-25 | 2002-06-25 | High-power semiconductor laser frequency converter |
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| Publication Number | Publication Date |
|---|---|
| CN1464598A true CN1464598A (en) | 2003-12-31 |
| CN1200491C CN1200491C (en) | 2005-05-04 |
Family
ID=29743001
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|---|---|---|---|
| CNB021215456A Expired - Fee Related CN1200491C (en) | 2002-06-25 | 2002-06-25 | High-power semiconductor laser frequency converter |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011127664A1 (en) * | 2010-04-16 | 2011-10-20 | 青岛海信电器股份有限公司 | Device and method for generating laser |
| CN102868083A (en) * | 2011-07-09 | 2013-01-09 | 湖北久之洋红外系统有限公司 | White solid-state laser |
| CN104577693A (en) * | 2010-04-16 | 2015-04-29 | 青岛海信电器股份有限公司 | Laser processing device, laser processing method and laser display light source |
| CN104638504A (en) * | 2015-03-05 | 2015-05-20 | 中国科学院光电研究院 | Multi-path output laser |
| CN114047157A (en) * | 2021-11-16 | 2022-02-15 | 山东省计量科学研究院 | Evaluation processing method and device for laser excitation source |
| CN116565696A (en) * | 2023-04-19 | 2023-08-08 | 重庆师范大学 | Multi-wavelength array laser capable of eliminating speckle effect |
-
2002
- 2002-06-25 CN CNB021215456A patent/CN1200491C/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011127664A1 (en) * | 2010-04-16 | 2011-10-20 | 青岛海信电器股份有限公司 | Device and method for generating laser |
| CN102870295A (en) * | 2010-04-16 | 2013-01-09 | 青岛海信电器股份有限公司 | Device and method for generating laser |
| CN102870295B (en) * | 2010-04-16 | 2015-03-18 | 青岛海信电器股份有限公司 | Laser processing device and method |
| CN104577693A (en) * | 2010-04-16 | 2015-04-29 | 青岛海信电器股份有限公司 | Laser processing device, laser processing method and laser display light source |
| CN102868083A (en) * | 2011-07-09 | 2013-01-09 | 湖北久之洋红外系统有限公司 | White solid-state laser |
| CN102868083B (en) * | 2011-07-09 | 2014-03-12 | 湖北久之洋红外系统股份有限公司 | White solid-state laser |
| CN104638504A (en) * | 2015-03-05 | 2015-05-20 | 中国科学院光电研究院 | Multi-path output laser |
| CN114047157A (en) * | 2021-11-16 | 2022-02-15 | 山东省计量科学研究院 | Evaluation processing method and device for laser excitation source |
| CN116565696A (en) * | 2023-04-19 | 2023-08-08 | 重庆师范大学 | Multi-wavelength array laser capable of eliminating speckle effect |
| CN116565696B (en) * | 2023-04-19 | 2024-03-05 | 重庆师范大学 | Multi-wavelength array laser capable of eliminating speckle effect |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1200491C (en) | 2005-05-04 |
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