CN1423842A - 藉由内部及外部光学组件之使用而加强发光二极管中的光放出 - Google Patents
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Abstract
本发明揭示一种新的发光二极管,其包含在发光二极管之上或其中的光放出结构(26),以增加其效率。新的光放出结构(26)提供将光反射,折射或散射到比较有利于光漏出封装的方向的表面。该结构可以是光提取组件(42,44,46,48,50,52)或散射层(112,122,134,144,152,162)的数组。光提取组件可具有多种不同的形状并可放置在许多地方以增强超越惯用的发光二极管的效率。散射层提供光散射中心并可放置在许多地方。新的具有光提取组件数组的发光二极管可以使用标准的处理技术,以近似于标准的成本来制造。具有散射层的该新发光二极管以新的方法制造且亦易于制造。
Description
本申请主张Thibeault等人于1999年12月3日申请的美国临时申请案第60/168,817号之利益。
发明背景
发明领域
本发明涉及一种发光二极管，更进一步系关于加强其光放出之新结构。
相关技术的描述
发光二极管(LED)为一种重要的固态装置类别，其用以转换电能到光线，其通常包含一夹在两个相对掺杂层之间的半导体材料的活动层。当一偏压施加到该掺杂层时，孔及电子被射入到该活动层，在其中被重新结合来产生光。由该活动区域所产生的光发射到所有的方向，且光由所有暴露的表面漏出半导体芯片。发光二极管的封装通常用来导引漏出的光进入一所需要的输出放射截面。
因为半导体材料已有改善，半导体装置的效率也会改善。新的发光二极管的制作材料像是InAlGaN，其允许从紫外光到黄色光谱中的有效照明。许多新的发光二极管与惯用的照明相比，在转换电能到光时会更有效率，也更为可靠。因为发光二极管有所改善，其被预期在许多应用中取代惯用的光，例如交通信号，室外及室内显示器，汽车头灯及尾灯，惯用的室内照明等。
然而，惯用发光二极管的效率系受限于其不能够发射由其活动层所产生的所有光。当一发光二极管通电时，由其活动层(在所有方向上)所发射的光，以许多不同的角度达到该发射面。典型的半导体材料与周遭空气(n＝1.0)或压缩环氧(n 1.5)相比，具有较高的折射系数(n 2.2-3.8)。根据Snell’s法则，由一具有高折射系数的区域传到一在某个临界角之内(相对于表面的正常方向)具有低折射系数的区域的光将会穿到该较低系数的区域。到达临界角之外的表面的光将不会穿过，但将经历全反射(TIR)。在一个发光二极管的例子中，TIR光可持续在该发光二极管中反射，直到其被吸收为止。由于此现象，许多由惯用发光二极管所产生的光不会发射，而降低其效率。
一种降低TIR光的百分比的方法是在发光二极管的表面产生随机结构型式的光散射中心。(由Shnitzer等人提出，“30％External Quantum Efficiency FromSurface Textured，Thin Film Light Emitting Diodes”，Applied Physics Letters63，2174-2176页1993))。该随机结构系在反应离子蚀刻期间，籍由使用次微米直径聚苯乙烯颗粒在该发光二极管表面上做为一屏蔽而成型于该表面上。该结构化的表面的特征在于光波长的层级可使光线的折射及反射的方式因随机干扰效应无法由Snell法则来预测。此方法已证明可改善发射效率由9到30％。
表面结构的一个缺点是其会妨碍具有特征化的电极层的较差导电性的发光二极管(例如p-型GaN)中的有效电流展开。在少数装置或具有良好导电性的装置中，自p及n型接触点的电流将扩展遍及所有的层。而对于大多数装置或以较差导电性材料制成的装置，电流无法由接触点扩展遍及所有的层。因此，部份活动层因不能有电通过而不能发光。为在整个二极管区域产生均匀的电流发射，一导电材料的展开层可沉积在表面上。然而，此展开层须是透明的才能使光能够透过该层。当一随机表面结构被加入到该发光二极管表面，一足够薄且透明的电流展开器则不能轻易被沉积。
另一个增加光从一发光二极管放出的方法系包含发射表面或内部接口的一周期性模式，所述内部接口将光可由其内部投射角重新导向至由该表面的形状与期间所决定的定义模式。请参考Krames等人所提出的美国专利编号5,779,924。此技术为一随机结构表面的一特殊例，其中干扰效应不再随机且表面可将光耦合到特殊的模式或方向。此方法的一个缺点是该结构很难制造，系因为该表面形状及样式必须是均匀的，并且非常小，大约是在该发光二极管光的单一波长的程度。此样式也会造成沉积一光学上透明的电流展开层的困难，如前所述。
还有一种增加光放出的方式是通过将发光二极管的放射表面做成一在中心具有一放射层的半球形。当此结构增加放射光的量时，其却很难制造。由Scifres及Burnham所提出的美国专利编号3,954,534中所揭示的一种方法是形成一种发光二极管的数组，在每个发光二极管之上分别有一半球形。该半球形系形成于一基板中，且一二极管数组在其上生长。然后，该二极管及晶体结构从该基板上被蚀刻掉。此方法的一个缺点是其局限于将该结构形成在基板接口，而由基板移除该结构会导致制造成本增加。同时，每个半球皆有一直接地位于其上的放射层，这需要精密的制造。
美国专利编号5,793,062揭示一种增加一发光二极管的光放出的结构，该结构藉由包含光学性的非吸收层来重新导向光离开诸如接触点的吸收区域，也重新导向光朝向该发光二极管的表面。此结构的一个缺点是，该非吸收层需要形成底切狭角层，对许多材料系统而言难于制造。
另一个加强光放出的方法是将光子耦合到在发光二极管的放射表面上的一薄膜金属层之内的表面电浆模式，其会放射回到辐射模式。[Knock等人所提出，Strongly Directional Emission From AlGaAs/GaAs Light Emitting Diodes，Applied Physics Letter 57，2327-2329页，(1990)]。这些结构依赖于将由半导体发射的光子耦合到该金属层中的表面电浆，其进一步耦合到最终放出的光子。此装置的一个缺点是，其很难制造，因为该周期性结构为单一方向架构的沟槽间距很窄(＜0.1微米)的格栅。同时，整体外部量子效率低(1.4-1.5％)，大概是由于光子到表面电浆以及表面的电浆-到-周遭光子转换机制的无效。此结构也会对一电流展开层造成同样的困难，如上所述。
光放出也可藉由使发光二极管片的侧表面角度化来产生一外形呈倒梯形结构状的方式来改善。该角度化的表面提供了以一放射面将TIR光投射在该基板材料中[Krames等人提出，High Power Truncated Inverted Pyramid(AlxGal-x)0.5In0.5P/GaP Light Emitting Diodes Exhibiting＞50％External QauntumEfficiency，Applied Physics Letters 75(1999)]。藉由此方法显示了外部量子效率对于InGaAlP材料系统增加了35％到50％。此方法对于将大量光投射在基板中的装置是可行的。对于生长在蓝宝石基板上的GaN装置，许多光投射在GaN膜中，以致于发光二极管片的侧表面角度化的方式并不能达到所需要的改善。
还有一种加强光放出的方法是光子循环利用[Shnitzer等人提出，“
Ultrahigh Spontaneous Emission Quantum Efficiency，99.7％Internally and 72％Externally，From AlGaAs/GaAs/AlGaAs Double Heterostructures”，AppliedPhysics Letters 62，131-133页，(1993)]。此方法依赖于具有一高效率活动层的发光二极管，其可立即转换电子及孔成为光，反之亦然。TIR光线由该发光二极管表面反射出来，并撞击到活动层，从而转换回到一电子电洞对。由于活动层的高效率，该电子电洞对可几乎立即地重新转换为光，并再次发射到任意的方向。一百分比的该循环利用的光将会撞击在临界角内的其中一发光二极管发射表面而漏出。反射回到活动层的光再次经过同样的过程。
此方法的一个缺点是其仅能够用于以非常低光学损失的材料制成的发光二极管，且不能够用于在其表面上具有一吸收电流展开层的发光二极管。
发明概述
本发明提供一新的具有光放出结构的发光二极管，其可配置在一暴露的表面上，或是在发光二极管之内，用于增加光由发光二极管漏出的机率；因此而增加发光二极管的光放出及整体效率。该新的发光二极管易于制造，并提供许多新的选择及组合来放光。
该新发光二极管通常包含一具有一p型层，一n型层，及在该p型层与n型层之间的一活动层的发光二极管结构。该发光二极管结构系夹在一第一展开层与一第二展开层之间。所述展开层为半导体或是传导层，该传导层散布电流穿越装置的平面以使电流可以有效地发射到活动层。光放出结构包含在新发光二极管(或基板)之上，或是在其内部。该结构提供一空间性变化的折射系数，并提供表面来允许光在发光二极管之内投射而折射，反射或漏出。在大部份的具体实施例中，发光二极管结构及电流展开层生长于一与第一展开层邻接，而与发光二极管结构相对的基板上。个别的接触点系包含于第一及第二展开层，一偏压施加于该接触点导致发光二极管结构的活动层发光。光放出结构较佳地是配置在平行于发光二极管层的平面中，并大致上覆盖该发光二极管的区域。
该光放出结构较佳地既是光提取组件(LEE)的数组，又是散射层。在那些暴露表面上具有一LEE数组的具体实施例中，所述数组系由一种比发光二极管包装材料的折射系数要高的材料所形成。该LEE可使用许多不同的方法来成形，并提供许多不同表面使另外投射的光漏出。
另外，该新发光二极管可将LEE数组放置在发光二极管本身之内，该内部LEE数组也形成来提供一空间性变化的折射系数。LEE数组在发光二极管生长过程期间形成，一旦形成了该数组，发光二极管结构剩余的层即由一外延沉积技术生长于该数组上使该LEE数组包含于发光二极管之内。在外延层或基板之中另外投射的光束可与该LEE数组作用，以折射和/或反射到可从该发光二极管漏出的光束。
该新发光二极管的另一具体实施例包含一在其中一发光二极管暴露表面上的散射层，而所说层系以一具有高于该发光二极管包装材料之折射系数的材料来形成。撞击到发光二极管上的散射层的光线有较高的机率散射到一漏出方向。利用一表面材料来形成光散射层，将粗糙度样式化到半导体表面的问题即可消除，而比Schnitzer的方法具有更佳的优点。
另外，该新发光二极管可将散射层配置在发光二极管本身之中。该散射层能够在发光二极管的外延生长之前形成在基板中或其上面，或在该发光二极管外延结构本身之中。该散射层系以一种折射系数与基板及/或外延材料不同的材料制成，所以能够发生光散射。
大多数上述的具体实施例，也可使用覆晶安装技术，而基板即成为该发光二极管主要发射表面。
本发明的这些及另外其它的特征及好处对于本领域的那些专业人士将可由以下的详细说明，并配合所附图面而更加了解，其中：
附图简述
图1所示为一在第二散射层之上具有一LEE数组的新发光二极管的剖面图；
图2所示为一在基板表面上具有一LEE数组的新发光二极管的剖面图；
图3所示为可形成于数组中而与新发光二极管成一体的LEE的基本形状的剖面图；
图4所示为一具有一在基板与第一散射层之间的接口上形成的内部LEE数组的新发光二极管的剖面图；
图5所示为一具有一在第一散射层之内形成的LEE数组的新发光二极管的剖面图；
图6所示为一具有一带空隙的LEE数组的新发光二极管的剖面图；
图7所示为一LEE数组形成在与第一散射层之接口处的基板之内的一新发光二极管的剖面图；
图8所示为一具有一在第二散射层上形成的表面散射层的新发光二极管的剖面图；
图9所示为一具有一在基板上形成的表面散射层的新发光二极管的剖面图；
图10所示为一具在与基板接口处的第一散射器之内形成一内部散射层的新发光二极管的剖面图；
图11所示为一具有一在第一散射层之中形成的内部散射层的新发光二极管的剖面图；
图12所示为一新发光二极管的剖面图，内部散射层是在外延生长期间在原位形成的；
图13也显示为新发光二极管的剖面图，内部散射层是在外延生长期间在原位形成的；
图14所示为一新覆晶安装发光二极管的剖面图，其在基板的表面上具有一LEE数组；及
图15所示为一新覆晶安装发光二极管的剖面图，其具有一在其中一发光二极管层内形成的表面散射层。
较佳实施例的描述
第一实施例
图1所示为根据本发明所建构的新发光二极管10的一具体实施例。该新发光二极管具有一发光二极管结构12，其包含一夹在两个相对掺杂层14，15之间的活动层13。在较佳的发光二极管结构12中，上层14为p型，底层15为n型，虽然在层14，15中相对的掺杂仍可实现。该新发光二极管具有一由导电材料制成的，将电流由一第一接触垫18扩展到发光二极管结构的底层15的第一展开层16。所述第一接触垫18也可视为n型接触垫，因为在该较佳具体实施例中底层15为n型。一导电材料的第二展开层20也可包含在发光二极管结构的上层14上，使电流由一第二接触点22扩展到上层14。该第二接触点22也可视为p型接触点，因为在该较佳发光二极管结构12中，上层14为p型。所述发光二极管结构，展开层及接触点，均在一基板24上形成，且第一展开层与基板24邻接。
所述基板24可由多种材料制成并能导电。当导电时，基板24即可做为第一展开层，而一n型接触点28可直接地沉积在该基板上。电流将会流经该基板24到达发光二极管结构12的底层。
一表面LEE 26的数组系由标准的半导体处理技术形成在第二展开层20。该LEEs 26提供表面使让正常投射的TIR光通过或折射出及漏出，因此增加发光二极管10的效率。为了增加其有效性，该LEEs 26应该具有比发光二极管包装材料(n1)高的折射系数(n2)。该较高的n2允许更多的光进入LEEs，其通常可进入包装材料。然后该LEEs的成形表面允许更多的光漏出到该包装材料。该新发光二极管10的一个优点是易于制造，因为该LEEs可以标准处理技术，在其被分开之前在发光二极管的一晶圆上形成。
该新发光二极管10最好是由AlInGaN材料制成。第二展开器20较佳地是一薄的半透明金属，诸如：Pd，Pt，Pd/Au，Pt/Au，Ni/Au，NiO/Au或任何沉积在发光二极管结构的上层14之上的其合金，较佳地是p型AlInGaN。第二展开器20可通过许多惯用方法沉积在该新发光二极管10之上，较佳的方法是蒸发或溅镀。第一展开器16较佳地是以n型AlInGaN制成，并可由反应离子蚀刻来暴露接触点。Ni，Al/Ni/Au，Al/Ti/Au，或Al/Pt/Au被用作为n型接触点18或28到基板24或第一展开器16。
蓝宝石，AlN，SiC或GaN可用作为基板24，因SiC及GaN具导电性，而AlN及蓝宝石具绝缘性。SiC具有一更密集的晶格来符合第三族氮化物，例如GaN，并产生高品质的第三族氮化物薄膜。碳化硅也可具有一非常高的热导电性，所以碳化硅上的第三族氮化物装置的整体输出功率不限制于基板的热消散(如一些在蓝宝石上形成的装置的状况)。SiC基板可由美国Durham，North Carolina的CreeResearch公司生产，而其制造方法则可见于美国专利参考编号Re.34,861；4,946,547及5,200,022中的科学文献。
较佳地，LEE 26使用以下的方法来形成在装置上。该LEE材料系由蒸发，化学气相沉积(CVD)或溅镀法来沉积在表面。较佳的LEE材料为SiC，SiNx，AlN，SiOxNy，Si3N4，ZnSe，TiO2，Ta205，GaN，或SiO，其中最佳的是ZnSe，TiO2，SiNx，AlN及GaN。较佳的LEE厚度的范围是100纳米到10微米。在LEE材料沉积之后，一光感聚合物，诸如光阻，首先暴露出来，并发展成为一屏蔽。
然后该LEEs 26可以两种方式形成在LEE材料上。首先，该LEE材料可用一湿式化学蚀刻通过所述屏蔽蚀刻除去。此蚀刻可底切该屏蔽层以形成所述LEE结构。第二，该屏蔽可再流到一烤炉中来形成屏蔽中弯曲或线性梯度。然后使用反应离子蚀刻使将该样式由该屏蔽转移到LEE材料中，而形成最终的LEE结构。该数组样式在本质上可为规律或不规律，而在个别LEE之问较佳的距离范围是在1微米到50微米之间。
也可使用其它的方法来形成该LEE结构，此技术可应用到所有的发光二极管材料系统。同时，上述该LEE的形成也可用于接下来的具体实施例中任何形成的LEE数组。
第二实施例
图2所示为根据本发明所建构的一新发光二极管30的第二具体实施例。其类似于图1的发光二极管10，其具有相同的发光二极管结构12，第一展开器14，基板24，第二展开器16，及n型与p型接触点18，22。当该基板为导电性时，其也可使该n型接触点23在基板24之上。
然而，在此具体实施例中，LEEs 32系形成在与第一展开器16的基板24相对的表面上。类似于发光二极管10，LEEs 32系在装置制造期间或之后，但是是在模子分离之前所形成的。为了加强光放出，LEEs的折射系数(n2)应该大于LEEs的包装材料的系数(n1)。在图1中用于所述新发光二极管10的较佳材料及制造流程，也可用于此具体实施例中。
另外，LEEs 32可以在基板24中形成。此特别可应用于SiC基板及AlInGaN为主的发光二极管结构。该LEEs系通过一蚀刻屏蔽使反应离子蚀刻而直接地形成在基板中，或以一雷射或锯切割该基板来形成。在此例中的LEE的厚度最好是在1微米到200微米的范围内，组件之间的距离最好是在1微米到200微米的范围内。
此新发光二极管20可特别应用在基板区域内具有大量投射的光的发光二极管，例如一GaN为主的发光二极管在一SiC基板的状况。藉由在一数组中形成LEEs32，新发光二极管10及20的好处是可以适用于一较大的发光二极管芯片尺寸，其系与由Krames等人(见上述)所揭示的外形呈倒梯形结构状处理相比。
对所有的新发光二极管的具体实施例可以使用不同的形状以提供最佳光放出。图3所示为形状的不同范例的横剖面图，其可用于数组中的LEEs。当LEEs 48，50，52，54具有片段的线性表面时，LEEs 42，44，46为曲面。该形状可被选择并调整来达到一给定具体实施例的最佳光放出。不同的形状可使用LEE材料及/或屏蔽层与标准湿式化学，干式蚀刻，雷射或晶圆切割技术的组合来形成。在图中所示的形状仅代表少数可能的形状，而此发明的范围并不限于所示的形状。
第三实施例
图4所示为根据本发明建构的该新发光二极管60的一第三具体实施例。其也可具有一发光二极管结构62，第一展开层64，基板66，n型接触点68，第二展开器70，及p型接触点72，其皆与发光二极管10及20类似地配置。然而在此具体实施例中，LEEs 74系形成在一与发光二极管装置成一体的数组中，较佳地是在基板66及第一展开器64之间的接口处。LEE材料必须为一不同的折射系数n2，与该第二展开器材料的n1不同，藉以提供反射及折射，而通常能将投射的光重新导引到一个允许该光从发光二极管60漏出的方向。
该LEEs 74较佳地是使用一光阻罩及该LEE材料的湿式化学蚀刻来形成。为了形成内部LEE数组，外延材料必须重新生长于该LEEs。这最好是由金属有机化学气相沉积(MOCVD)，气相外延(VPE)，或分子束外延(MBE)来完成，而以MOCVD为最佳。较佳的屏蔽材料为SiO2，SiN2，Si3N4，TiO2，AlN及SiO。LEE屏蔽材料的较佳厚度为0.1微米到10微米之间，LEE之间的较佳距离为1微米到50微米之间。此外，内部发光二极管可以放置在发光二极管结构内不同的位置。
第四及第五实施例
图5所示为根据本发明建构的新发光二极管70的一第四具体实施例。其具有与上述具体实施例相同的发光二极管结构72，展开层75，76，基板78及接触点80，82。然而，在此具体实施例中，一外延材料层84系在形成LEEs 86之前生长在基板上。外延层84系由MOCVD，VPE或MBE生长，然后LEEs 86即成长在该外延层的表面上的数组中，而第二展开器75的剩余部份即形成在该LEEs 86之上。此具体实施例可用于在LEE数组上重新生长发光二极管的结构76，但需要一额外的外延生长步骤。
在以GaN为主的发光二极管中具有LEEs在其层之中，在LEE材料上的重新生长可在一MOCVD生长系统中由侧向外延附生(LEO)来达成。此可提供标准平面生长中优良的材料品质，而导致另外增加的发光二极管放射，成为光放出的额外好处。
此外，侧向外延附生处理提供了根据本发明所建构的发光二极管90的另一具体实施例，其示于图6。在此具体实施例中，该LEO生长状况可被调节以在屏蔽材料94上产生LEE空隙92。该空隙92系做为线性(或曲线的)LEEs与第一展开层96成一体。该空隙及LEEs重新导向内部投射光来增强光放出。在半导体材料中空隙的形成系由Fini提出。(请参考Fini等人所提，
HighQuality Coalescenceof Laterally Overgrown GaN Stripes on GaN/Saophire Seed Layers，AppliedPhysics Letters 75，12，1706-1708页，(1999))。
第六实施例
图7所示为新发光二极管100的一第六具体实施例，其具有与前述发光二极管相同的层。在此具体实施例中，LEEs 102系位于基板104及第一展开器106之间的接口处的一数组中，但是是在基板104中。LEEs 102系直接形成于该基板104中，其系藉由湿式化学或干式蚀刻技术来蚀刻该基板穿过一屏蔽。然后LEEs即生长于蚀刻的区域中，发光二极管的剩余层即由MOCVD，VPE或MBE生长于发光二极管的剩余层。LEEs可以是外延材料重新生长后留在基板中的空隙，或是填入到所述蚀刻区域的外延材料。
第七实施例
图8所示为该新发光二极管110的第七具体实施例，其使用一散射层112，该散射层位于发光二极管结构114侧边的外延上部，并位于第二电流展开层116的上部。再次地，所述基板，发光二极管层，及发光二极管接触点是与先前具体实施例中所述的型号相同。为达到最佳效果，所述散射层应该具有一比发光二极管包装材料的折射系数n1大的折射系数n2。一般而言，折射系数n2愈高，光放出则愈佳。散射层粒子在相邻粒子之间的距离必须为20微米到1微米之间。粒子尺寸应该为20纳米到1微米之间。另外，散射层可以是在材料层中具有一不同折射系数的一系列的孔。
所述散射器112可以用几种不同的方法来形成。第一种方法系直接以具有所需要折射系数的微球粒来涂覆发光二极管结构的表面。较佳的微球粒为ZnSe或TiO2，或任何高系数，低光学吸收的材料。发光二极管可通过沉浸在一溶剂或水中的球粒喷涂或旋涂方式来涂覆。
第二种形成方法系先以蒸发，CVD或溅镀来均匀地或将近均匀地使一散射器材料沉积在发光二极管表面上。较佳的材料为SiN，AlN，ZnSe，TiO2及SiO。接着，一屏蔽材料即覆盖在该表面上，较佳屏蔽材料为硅石或聚苯乙烯微球粒，或是诸如一旋涂光阻的一薄聚合物层。该屏蔽材料系被用作为一使散射器材料湿式化学蚀刻的屏蔽，或用作为干式蚀刻的一烧蚀屏蔽，例如活性离子蚀刻(RIE)。在该样式被转移到该散射器材料之后，所剩余的屏蔽材料即被移除，而留下一散射器在该发光二极管表面上。
此处的具体实施例为一种由Schnitzer等人提出的发光二极管的改善。其提供了不需要蚀刻散射层到半导体材料的优点。由此可使得散射器技术可轻易地应用在以GaN为主的材料系统，其中第一展开器材料基本上为一不能轻易地中断的非常薄的金属层。
第八实施例
图9所示为一新的发光二极管120，其为图8中所述发光二极管110的变化。发光二极管120具有相同的发光二极管层，但在此具体实施例中，所述散射层122系应用到基板124的底面上。此方法可特别应用到发光二极管，其中基板的折射系数系类似于发光二极管外延层，诸如在SiC上的AlInGaN外延层。
第九及第十实施例
图10及11所示为新发光二极管130及140，其个别的散射层134，144系位于其第一展开层132，142之中。对于这些具体实施例，散射层系数n2必须不同于第一散射层的折射系数n1，才会发生光的散射。此散射层的较佳材料为硅石，或TiO2微球粒。
对于图10中的发光二极管130，散射层134系配置在基板136及第一展开器132之间的接口处。然后发光二极管层即通过MOCVD，VPE或MBE生长在散射层之上。对于图11中的发光二极管140，散射层144系位在第一展开层142之内。第一展开器的一层会先生长，然后形成散射层144。然后第一展开器及发光二极管层的剩余部份生长于该散射层之上。
该散射层也可形成在发光二极管130，140的其它层之内，包含该发光二极管结构及基板的层。散射器也可由其它方法及其它材料来形成。因此，本发明并不会受限于如所示的散射层的配置。
第十一实施例
当MOCVD被用作为外延生长工具时，散射层也可使用原位技术来形成在发光二极管中。此技术系特别适用于以GaN为主的发光二极管。图12及13显示两个具有散射层152，162的发光二极管150及160，其在第一展开层154，164中原位形成。在发光二极管150中，其基板155以SiC或蓝宝石制成，而第一展开器154形成为由AlxInyGal-x-yN，0≤x≤1，0≤y≤1制成的未接合岛。在第一展开器生长的初始阶段，形成了岛156。在接合该岛156之前，停止生长，而一诸如AlGaN，SiO2或SiN的较低折射系数材料的层152沉积在该岛之间及/或该岛之上，产生所需要的内部系数的不连续性。然后以正常方式生长来完成第一展开层及发光二极管结构。
对于发光二极管160，除了使用岛来形成该不连续性，生长状况可在第一展开层生长的初始阶段期间被改变以在其表面上加入一粗糙度。对于以AlInGaN为主的发光二极管，外延层可藉由增加二硅石的流动，改变氨的流动，或增加第一层生长的速率来生长为粗糙的。一旦加入了粗糙度，较低折射系数AlGaN或其它介电层162即被沉积。然后依正常状况生长来完成第一展开器及发光二极管结构。
如上所述，所述散射层可以放置在其它包含发光二极管结构的层及基板的层中，本发明并不受限于所示的配置。
覆晶实施例
最后，在上述的所有具体实施例中，所述装置可使用覆晶接合技术。图14所示为一新的发光二极管170接合于这样的架构中。该发光二极管结构172系以一导电反射层175来涂覆，而一第二展开层189则由一导电黏合媒体来固接到反射层175。然后一次固定层176安装在该第二展开层189上。一p-接触点188包含于一次固定层176上，并与第二展开层189接合。施加于p-接触点188的电流扩展到第二展开层并流到发光二极管结构的上层。
一n-接触点178也包含在该次固定层176上，并经由一第二导电接合层182与第一展开层180耦合。来自n-接触点178的电流通过层182流到第一展开器180，并进入发光二极管结构的底层。LEEs 186于基板184的底面上形成。
自发光二极管170发射出的光主要穿过其基板184，由此结构放出光可被改善而超越惯用的接合结构，这取决于所使用的LEE数组或散射器的型号。此处，该重新导向的光可在第一漏出穿过芯片，其在重新导向之后降低任何光穿过基板返回的光学损失。
图15显示一新发光二极管190，其使用类似于发光二极管170的覆晶接合。然而，除了利用LEEs，其具有一在第二展开器194及反射层196的接口处的散射层192。
虽然本发明已藉由其某些较佳具体实施例来加以说明其细节，但也可有其它的版本。其它利用LEE数组的发光二极管架构，也可由本领域的一专业人士来想象。该新发光二极管可具有不同的LEE数组及散射层的组合。LEEs可具有不同的形状，尺寸，相邻LEE之间的空间，并可放置在不同的位置。类似地，散射层可用不同的材料制成，并放置在不同的位置。因此，所附申请专利范围的精神及范围必须不受限于以上所述的较佳具体实施例。
Claims (40)
1.一种具有加强光放出结构之发光二极管(LED)，包含：
一发光二极管结构(12)，其设有：
一外延生长p-型层(14)；
一外延生长n-型层(15)；及
一外延生长活动层(13)，其位于所述p-型与n-型层(14，15)之间；
一第一展开层(16)，其与所述发光二极管结构(12)邻接；
一第二展开层(20)，其与所述发光二极管结构(12)邻接，并与所述第一展开层(16)相对；及
光放出结构(26)，其与所述发光二极管整体配置，所述光放出结构提供表面使所述发光二极管内投射的光从所述发光二极管中散射出、反射出及/或折射出。
2.根据权利要求1的发光二极管，其特征在于其进一步包含一基板(24)，该基板与所述第一展开层(16)邻接，并与所述发光二极管结构(12)相对。
3.根据权利要求1的发光二极管，其特征在于所述基板(24)系导电的并作为一展开层(16)。
4.根据权利要求1的发光二极管，其特征在于所述光放出结构配置在与所述发光二极管平行的平面中，并大致覆盖所述发光二极管。
5.根据权利要求4的发光二极管，其特征在于所述光放出结构(26)包含一光提取组件(LEEs)的数组。
6.根据权利要求5的发光二极管，其特征在于所述光提取组件(LEEs)(42，44，46)具有曲面。
7.根据权利要求5的发光二极管，其特征在于所述光提取组件(LEEs)(48，50，52，54)具有片段线性表面。
8.根据权利要求1的发光二极管，其特征在于所述光放出结构包含一散射层(112，122，134，144，152，162)。
9.根据权利要求8的发光二极管，其特征在于所述散射层包含一微粒层(112，122，134，144)。
10.根据权利要求9的发光二极管，其特征在于所述微粒层(112，122，134，144)具有与所述发光二极管(LED)的层不同的折射系数。
11.根据权利要求8的发光二极管，其特征在于所述散射层包含一在所述发光二极管(LED)中的粗糙的材料层(152，162)。
12.根据权利要求11的发光二极管，其特征在于所述粗糙层(152，162)具有一与所述发光二极管(LED)不同的折射系数。
13.根据权利要求4的发光二极管，其特征在于所述光放出结构(26)配置在所述第二展开层(20)之上，与所述发光二极管结构(12)相对。
14.根据权利要求4的发光二极管，其特征在于所述光放出结构(32)配置在所述基板(24)的表面上，与所述第一展开层(16)相对。
15.根据权利要求4的发光二极管，其特征在于所述光放出结构(74，86，94，102)配置在所述发光二极管(LED)的层内部。
16.根据权利要求15的发光二极管，其特征在于所述光放出结构(74，86，94，102)具有与所述发光二极管(LED)的层不同的折射系数。
17.根据权利要求2的发光二极管，其特征在于所述光放出结构(74)配置在所述基板(66)和所述第一展开层(64)之间的接口上，所述结构(74)大致上在所述第一展开层(64)之内。
18.根据权利要求2之发光二极管，其特征在于所述光放出结构(86)配置在所述第一展开层(75)之内。
19.根据权利要求2的发光二极管，其特征在于所述光放出结构(102)配置在所述基板(104)和所述第一展开层(106)之间的接口上，所述结构大致上在所述基板(104)之内。
20.根据权利要求1的发光二极管，其特征在于其进一步包含一在所述第一展开层(16)之上的第一接触点(18)和一在所述第二展开层(20)之上的第二接触点(22)，一施加在所述接触点(18，22)两端的偏压使所述发光二极管(13)发光。
21.根据权利要求2的发光二极管，其特征在于所述基板(24)系导电的且所述发光二极管进一步包含一在所述基板(24)之上的第一接触点(28)和一在所述第二展开层(20)之上第二接触点(22)，一施加在所述接触点(18，22)两端的偏压使所述活动层(13)发光。
22.根据权利要求2的发光二极管，其特征在于其进一步包含：
一次固定层(176)；
一反射层(174)，其配置在所述发光二极管结构(172)上；
一第二展开层(189)，其在所述的次固定层(176)上与所述反射层(174)固接并与所述发光二极管结构(172)相对；
一偏压施加于所述第一和第二导电层(188，182)使所述活动层发光，所述基板为主要发射表面。
23.一种具有加强光放出之发光二极管，其包含：
一p-型层(14)；
一n-型层(15)；
一夹在所述p-型及n-型层(14，15)之间的活动层(13)，其中p-型(14)或n-型(15)为一上层，而另一层则为底层；
一与所述底层邻接的第一展开层(16)；
一在所述上层上的第二展开层(20)；
个别的电接触点(18，22)在所述展开层(16，20)之上，以致于一施加在所述接触点(18，22)两端的偏施使所述活动层(13)发光；
一与所述第一展开层(16)邻接的基板(24)；及
光放出结构(26)，其与所述层成一体，跑合平行于所述层，并大致上覆盖所述发光二极管，所述光放出结构(26)提供表面使所述发光二极管之内投射的光可以从所述发光二极管中散射出，反射出及/或折射出。
24.根据权利要求23的发光二极管，其特征在于所述光放出结构包含一具有弯曲和片段线性表面的光提取组件(LEEs)的数组(42，44，46，48，50，52，54)。
25.根据权利要求23的发光二极管，其特征在于所述光放出结构包含一散射层(112，122，134，144，152，162)。
26.根据权利要求25的发光二极管，其特征在于所述散射层(152，162)包含一在所述发光二极管内的粗糙的材料层。
27.根据权利要求23的发光二极管，其特征在于所述光放出结构(26)配置在所述第二展开层(20)上，与所述上层相对。
28.根据权利要求23的发光二极管，其特征在于所述光放出结构(32)配置在所述基板(24)的表面上，与所述第一展开层(16)相对。
29.根据权利要求23的发光二极管，其特征在于所述光放出结构(74，86，94，102)配置在所述发光二极管的层内部。
30.根据权利要求23的发光二极管，其特征在于所述光放出结构(74)配置在所述基板(66)和所述第一展开层(64)之间的接口上，所述结构(74)大致上在所述第一展开层(64)之间。
31.根据权利要求23的发光二极管，其特征在于所述光放出结构(86)配置在所述第一展开层(75)之间。
32.根据权利要求23的发光二极管，其特征在于所述光放出结构(102)配置在所述基板(104)和所述第一展开层(106)之间的接口上，所述结构(102)大致上在所述基板(104)之间。
33.一种具有加强光放出结构之发光二极管(LED)，包含：
一发光二极管结构(172)，其设有：
一外延生长p-型层；
-外延生长n-型层；及
一外延生长活动层，其位于所述p-型与n-型层之间；
一沉积在所述发光二极管结构(172)上的反射层(175)；
一位于所述反射层(175)上的第二展开层(189)；
一位于所述第二展开层(189)之上的次固定层(176)；
一第一展开层(180)，其与所述发光二极管结构(172)邻接，与所述反射层(174)相对；
一偏压施加于所述第一及第二展开层(189，180)，使所述活动层发光，所述基板(184)成为主要发光表面；及
光放出结构(186)，其与所述发光二极管成一体，所述光放出结构(186)系跑合平行于所述发光二极管结构(172)，并大致上覆盖所述发光二极管。
34.根据权利要求33的发光二极管，其特征在于所述光放出结构(186)包含一具有弯曲和片段线性表面的光提取组件(LEEs)的数组。
35.根据权利要求33的发光二极管，其特征在于所述光放出结构(186)包含一散射层。
36.根据权利要求33的发光二极管，其特征在于其进一步包含一位于所述次固定层(176)上并与所述第二展开层(189)邻接的p-接触点(188)，一位于所述次固定层(176)和第一展开层(180)之间的导电媒体(182)，以及一位于所述次固定层(176)上并与所述导电媒体(182)邻接的n-接触点(178)，一施加在所述p-和n-接触点(188，178)两端的偏压使所述发光二极管结构(172)发光。
37.一种具有一内部散射层的发光二极管以加强光放出之生长方法，其包括以下步骤：
将一基板(155)置于一半导体材料生长的反应器中；
使一第一半导体层(164)在所述基板(155)上生长，所述第一层(164)具有一粗糙表面；
速所述半导体层的生长停止；
使一半导体材料散射层(162)在所述粗糙层上生长，所述散射层具有与所述第一层不同的折射系数；
使一第二层在所述散射层(162)上生长，所述第二层具有与所述第一层(164)类似的折射系数；及
使一半导体发光结构(72)在所述第二层上生长。
38.根据权利要求36的方法，其特征在于所述发光二极管系以AlInGaN为主的且所述第一层藉由增加二硅石的流动，改变氨的流动，或增加所述第一层生长的速率来生长为粗糙的。
39.根据权利要求36的方法，其特征在于所述发光二极管具有一第一展开层(164)，而所述第二展开层(162)在所述展开层(164)中生长。
40.一种具有一内部散射层以加强光放出之AlInGaN发光二极管的制造方法，其包括以下步骤：
将一基板(155)置于一半导体材料生长的反应器中；
使一由AlxInyGal-x-yN，0≤x≤1，0≤y≤1制成的材料的未接合岛(156)在所述基板(155)上生长；
使所述岛(156)的生长停止；
将一散射层(152)沉积在所述未接合岛(156)上，所述散射层具有一与所述高掺杂的GaN材料不同的折射系数；
使一由AlxInyGal-x-yN，0≤x≤1，0≤y≤1制成的材料层(154)在所述散射层上生长，所述层具有一平滑表面；及
使一发光结构(72)在所述层(154)上生长。
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| CN100431182C (zh) * | 2005-01-28 | 2008-11-05 | 晶元光电股份有限公司 | 发光组件 |
| CN100452452C (zh) * | 2005-05-17 | 2009-01-14 | 财团法人工业技术研究院 | 备有发光二极管的翻转侧置结构的发光装置 |
| CN100423303C (zh) * | 2005-06-09 | 2008-10-01 | 璨圆光电股份有限公司 | 发光二极管及其制造方法 |
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| CN102636469B (zh) * | 2006-03-22 | 2016-07-06 | 阿米克公司 | 荧光读取器 |
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| CN102636469A (zh) * | 2006-03-22 | 2012-08-15 | 阿米克公司 | 荧光读取器 |
| CN101093870B (zh) * | 2006-06-22 | 2010-11-03 | 三星电机株式会社 | 顶部发射氮基发光器件及其制造方法 |
| CN101657911B (zh) * | 2007-03-08 | 2011-11-16 | 医药及科学传感器公司 | 用于恶劣环境的发光二极管 |
| CN102428579B (zh) * | 2009-05-29 | 2015-02-25 | 欧司朗光电半导体有限公司 | 光电子半导体芯片和用于制造光电子半导体芯片的方法 |
| US8900888B2 (en) | 2009-05-29 | 2014-12-02 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip |
| US9306131B2 (en) | 2009-05-29 | 2016-04-05 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip and method of producing an optoelectronic semiconductor chip |
| CN102428579A (zh) * | 2009-05-29 | 2012-04-25 | 欧司朗光电半导体有限公司 | 光电子半导体芯片和用于制造光电子半导体芯片的方法 |
| CN102130251A (zh) * | 2010-09-28 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | 发光二极管及其制造方法 |
| CN102130251B (zh) * | 2010-09-28 | 2014-09-03 | 映瑞光电科技(上海)有限公司 | 发光二极管及其制造方法 |
| CN102456785A (zh) * | 2010-10-19 | 2012-05-16 | 三星Led株式会社 | 垂直发光装置 |
| US9202967B2 (en) | 2011-03-03 | 2015-12-01 | Osram Opto Semiconductors Gmbh | Method for producing a thin-film semiconductor body and thin-film semiconductor body |
| CN103403839A (zh) * | 2011-03-03 | 2013-11-20 | 欧司朗光电半导体有限公司 | 用于制造薄膜半导体本体的方法和薄膜半导体本体 |
| US9972748B2 (en) | 2011-03-03 | 2018-05-15 | Osram Opto Semiconductors Gmbh | Thin-film semiconductor body with electronmagnetic radiation outcoupling structures |
| CN102820386A (zh) * | 2011-06-11 | 2012-12-12 | 昆山中辰矽晶有限公司 | 磊晶基板的制造方法、发光二极体及其制造方法 |
| CN102820386B (zh) * | 2011-06-11 | 2017-01-25 | 昆山中辰矽晶有限公司 | 磊晶基板的制造方法、发光二极体及其制造方法 |
| CN103682005A (zh) * | 2012-09-12 | 2014-03-26 | 展晶科技(深圳)有限公司 | Led磊晶制程 |
| CN103682005B (zh) * | 2012-09-12 | 2016-12-07 | 顾玉奎 | Led磊晶制程 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1234344B1 (en) | 2020-12-02 |
| HK1048709A1 (zh) | 2003-04-11 |
| KR20030017462A (ko) | 2003-03-03 |
| JP6150998B2 (ja) | 2017-06-21 |
| KR100700993B1 (ko) | 2007-03-30 |
| JP2013012781A (ja) | 2013-01-17 |
| EP2270883A2 (en) | 2011-01-05 |
| TW535300B (en) | 2003-06-01 |
| WO2001041225A2 (en) | 2001-06-07 |
| AU4139101A (en) | 2001-06-12 |
| CA2393081C (en) | 2011-10-11 |
| JP2004511080A (ja) | 2004-04-08 |
| JP5965095B2 (ja) | 2016-08-10 |
| WO2001041225A3 (en) | 2002-01-03 |
| US6657236B1 (en) | 2003-12-02 |
| US20040041164A1 (en) | 2004-03-04 |
| EP1234344A2 (en) | 2002-08-28 |
| TW465130B (en) | 2001-11-21 |
| US6821804B2 (en) | 2004-11-23 |
| EP2270883A3 (en) | 2015-09-30 |
| MY127035A (en) | 2006-11-30 |
| CN1292493C (zh) | 2006-12-27 |
| CA2393081A1 (en) | 2001-06-07 |
| MY124997A (en) | 2006-07-31 |
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