CN1402880A - 加强光放出的微发光二极管数组 - Google Patents
加强光放出的微发光二极管数组 Download PDFInfo
- Publication number
- CN1402880A CN1402880A CN00816601A CN00816601A CN1402880A CN 1402880 A CN1402880 A CN 1402880A CN 00816601 A CN00816601 A CN 00816601A CN 00816601 A CN00816601 A CN 00816601A CN 1402880 A CN1402880 A CN 1402880A
- Authority
- CN
- China
- Prior art keywords
- light
- emitting diode
- developer layer
- layer
- little
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000605 extraction Methods 0.000 title claims abstract description 15
- 238000003491 array Methods 0.000 title abstract description 3
- 239000000758 substrate Substances 0.000 claims description 39
- 239000004065 semiconductor Substances 0.000 claims description 33
- 230000004888 barrier function Effects 0.000 claims description 23
- 238000009413 insulation Methods 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 8
- 239000012634 fragment Substances 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 22
- 238000010276 construction Methods 0.000 description 16
- 229910052737 gold Inorganic materials 0.000 description 14
- 238000005530 etching Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 7
- 229910052697 platinum Inorganic materials 0.000 description 7
- 229910052763 palladium Inorganic materials 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000002650 habitual effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- -1 semimetal Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000006263 metalation reaction Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- XEBWQGVWTUSTLN-UHFFFAOYSA-M phenylmercury acetate Chemical compound CC(=O)O[Hg]C1=CC=CC=C1 XEBWQGVWTUSTLN-UHFFFAOYSA-M 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
Abstract
本发明揭示了一种新的发光二极管结构,其提供增加的光放出效率。该新发光二极管结构包含电连接微发光二极管(12)的数组,其具有一活动层(14)夹在两个相对掺杂的层(16,18)之间。该微发光二极管形成在一第一展开层(18)之上,而该微发光二极管其底层(16)则与该第一展开层(18)相接触。一第二展开层(24)形成于该微发光二极管(12)之上,并与其上层(16)相接触。该第一展开层(18)将该第二展开层(24)电绝缘。每个展开层(20,24)皆具有一接触点(22,26),当一偏压施加到所述接触点(22,26)时,电流流到微发光二极管(12),并发光。新发光二极管的效率由增加的微发光二极管(12)的发射表面而增加。来自每个微发光二极管活动层(14)的光将会在行进一短距离之后而到达一表面,并降低该光的整体内部反射。位于微发光二极管(12)之间的光提取组件(LEEs)(82,84,86,88,90,92,94)可被包含来另外加强光放出。新发光二极管系由标准处理技术来制造,使其易于制造,且成本类似于标准的发光二极管。
Description
本申请主张Thibeault et al.于1999年12月3日申请的美国临时申请案第60/168,817号之利益。
发明领域
本发明涉及一种发光二极管,更进一步说,系关于一种加强其光放出的新结构。
发明背景
发光二极管(LEDs)为一种重要的固态装置类别,其用以转换电能到光线,其通常包含一半导体材料的活动层,而夹在两个相对地掺杂层之间。当一偏压施加到该掺杂层时,孔及电子被射入到该活动层,在其中被重新结合来产生光。由该活动区域所产生的光系发射到所有的方向,而光从所有暴露的表面漏出该装置。该发光二极管的封装通常用来导引漏出的光进入一所需要的输出放射截面。
因为半导体材料已有改善,该半导体装置的效率也会改善。新的发光二极管的制作材料像是GaN,其提供了从紫外光到黄色光谱中的有效照明。许多新的发光二极管与惯用的照明相较之下,在转换电能到光时会更有效率,也是更为可靠。因为发光二极管有所改善,其被预期在许多应用中取代惯用的灯光,例如交通信号,室外及室内显示器,汽车头灯及尾灯,惯用的室内照明等。
然而,惯用的发光二极管的效率受限于不能够发射其活动层所产生的所有光。当一发光二极管被通电时,由其活动层发射的光(在所有方向上)以许多不同的角度到达该发射表面。典型的半导体材料与周遭空气(n=1.0)或压缩环氧(n1.5)相较之下,具有较高的折射系数(n2.2-3.8)。根据Snell’s法则,光是由一具有高折射系数的区域传到一具有低折射系数的区域,其是在某个关键角度之内(相对于该表面的垂直方向),将会穿到该较低系数的区域。在该关键角度之外到达该表面的光将不会穿过,但将经历整体内部反射(TIR)。在一个发光二极管的例子中,该TIR光可持续在该发光二极管中反射,直到其被吸收为止,或可从不同于发射表面的表面漏出。由于此现象,许多由习用发光二极管所产生的光不会发射,而降低其效率。
一种降低TIR光的百分比的方法是要在该发光二极管的表面上产生随机结构型式的光散射中心。(由Shnitzer等人提出,″30% External QuantumEfficiency from Surface Textured,Thin Film Light Emitting Diodes″,Applied Physics Letters 63,页2174-2176(1993))。该随机结构系在反应离子蚀刻期间,藉由使用次微米直径聚苯乙烯颗粒在该发光二极管表面上做为一光罩而成型于该表面上。该结构化的表面的特征在于由于随机干扰效应,该光波长的层级可使光的折射及反射的方式并无法由Snell法则来预测。此方法已可改善发射效率由9-30%。
表面结构的缺点是其可防止发光二极管中的有效电流展开,其具有较差的该特征化的电极层的导电性,例如p-型GaN。在较小的装置或具有良好导电性的装置中,来自该p及n型层接触点的电流可流入到整个个别的层中。而对于较大的装置或以较差导电性制成的装置,电流无法由该接触点流入到全部层。因此,部份该活动层不能接收到该电流,故不能发射光。为了要在整个二极管区域产生均匀的电流发射,导电材料的一展开层可已沉积在该表面上。然而,此展开层通常需要是光学上透明的,所以光线能够传送通过该层。当一随机表面结构被加入到该发光二极管表面,一足够薄且光学上透明的电流展开器不能轻易被沉积。
另一个增加自一发光二极管的光放出的方法系包含该发射表面的一周期性的样式,或是内部接口,其可重新导向该光由其内部补捉角到由该表面的形状与期间所决定的定义模式。请参考Krames等人所提出的美国专利第5,779,924号。此技术为一随机结构表面的一特殊例,其中该干扰效应即不再随机,而该表面可将光耦合到特殊的模式或方向。此方法的一个缺点是该结构很难制造,系因为该表面形状及样式必须是均匀的,并且非常小,大约是在该发光二极管光的单一波长的程度。此样式也会造成沉积一光学上透明的电流展开层的困难,如前所述。
增加光放出也可利用将该发光二极管的放射表面做成半球形,而在中心具有一放射层。当此结构增加放射光的量时,其却很难制造。由Scifres及Burnham所提出的美国专利第3,954,534号中,揭示的形成一种发光二极管的数组,在每个发光二极管之上个别有一半球形。该半球形系形成于一基板中,而二极管数组成长于其上。然后,该二极管及镜片结构由该基板上蚀刻去除。此方法的缺点是其限于将该结构形成在该基板表面,而由该基板移除该结构会造成制造成本的增加。同时,每个半球皆有一放射层直接地位于其上,其需要非常精密的制造。
美国专利第5,793,062号揭示一种结构,其用于加强自一发光二极管的光放出,藉由包含光学性的非吸收层来将重新导向光离开吸收区域,例如接触点,也重新导向光朝向该发光二极管的表面。此结构的一个缺点是,该非吸收层需要形成下部切除的狭角层,对许多材料系统而言非常难以制造。
另一个方法来加强光放出的是将光子耦合到表面电浆模式,而在该发光二极管的放射表面上的一薄膜金属层之内,将其放射回到辐射模式。[Knock等人所提出,″Strongly Directional Emission from AlGaAs/GaAs LightEmitting Diodes″,
Applied Physics Letter 57,页2327-2329,(1990)]。这些结构依赖于由该半导体发射回来的光子耦合到该金属层中的表面电浆,其进一步耦合到最终被提取的光子。此装置的一个缺点是,其很难制造,因为该周期性结构为沟槽间距很窄(<0.1微米)的单一方向架构的格栅。同时,整体外部量子效率很低(1.4-1.5%),其大部份是由于光子到表面电浆,及表面的电浆-到-周遭光子转换机制的效率低。此结构也会造成对一电流展开层同样的困难,如上所述。
光放出也可藉由将发光二极管片的侧表面角度化以产生一反向截短的三角锥的方式来改善。该角度化的表面提供了以一放射面来将TIR光补捉在该基板材料中[Krames等人提出,’High Power Truncated InvertedPyramid(Al
xGa
1-x)
0.5In
0.5P/GaP Light Emitting Diodes Exhibiting>50%External Qauntum Efficiency’
Applied Physics Letters 75(1999)]。藉由此方法,外部量子效率对于InGaAlP材料系统显示增加了35%到50%。此方法对于将大量光补捉在该基板中的装置是可行的。对于在蓝宝石基板上成长的GaN装置,许多光被补捉在GaN膜中,所以将发光二极管片的侧表面角度化的方式并不能达到所需要的改善。
另有一种加强光放出的方法是光子循环利用[Shnitzer等人提出,’Ultrahigh spontaneous emission quantum efficiency,99.7% internallyand 72% externally,from AlGaAs/GaAs/AlGaAs double heterostructures’,Applied Physics Letters 62,页131-133,(1993)]。此方法根据发光二极管具有一高效率的活动层,可立即转换电子及孔成为光,反之亦然。TIR光由该发光二极管表面反射出来,并撞击到该活动层,而转换回到一电子-孔配对。由于该活动层的高效率,该电子-孔配对可几乎立即地重新转换为光,并再次放射到任意的方向。一百分比的该循环利用的光将会撞击到在该关键角度内的发光二极管放射表面之一而逃出。反射回到该活动层的光再次经过同样的过程。然而,此方法仅能够用于以非常低光学损失的材料制成的发光二极管,且不能够用于在其表面上具有一吸收电流展开层的发光二极管。
发明概述
本发明提供一种新的发光二极管,其具有互连的微发光二极管数组,以提供改善的光放出。微发光二极管具有一较小的活动区域,其范围在1到2500平方微米,但该尺寸并非本发明的关键。一微发光二极管的数组为任何电互连的微发光二极管的分布。该数组提供一大的表面区域,使光能够漏出每个微发光二极管,因此而增加发光二极管的可用光。所述新发光二极管可具有许多不同的几何形状,且由于其是以标准半导体处理技术来形成,故非常易于制造。
所述新发光二极管包含一第一导电展开层,将微发光二极管沉积在其一个表面之上。每个微发光二极管具有一p-型层,一n-型层及一夹在所述p-及n-型层之间的活动层。所述p-或n-型层可为上层,而另一个则为底层。施加于所述第一展开层的电流流入到每个微发光二极管的底层。一第二展开层包含在所述微发光二极管上,自所述第二展开器的电流流入到所述上层。当一偏压施加在所述第一及第二展开层时,微发光二极管即发光。
所述第二展开器的一具体实施例为一具有在所述微发光二极管上的导电通路上的导电互连栅格状结构,其与所述微发光二极管的上层接触。一绝缘层包含在所述数组上,而所述栅格在该绝缘层上,因此将所述第一展开层与所述栅格电绝缘。
另外,覆晶接合可用于互连微发光二极管。使用此方法,首先形成一未连接的微发光二极管数组,然后接合到一电导电材料来提供该数组互连。在一第三实施例中,所述栅格通过微发光二极管,且所述p-型,活动,及n-型材料在该微发光二极管之间的该栅格的导电通路之下将栅格及第一展开层电绝缘。此栅格状结构可被设计来使发射的光能够在行进一段短距离之后与一侧壁互相作用。
所述新发光二极管能够使光提取组件(LEEs)沉积在该微发光二极管之间,或是形成在该微发光二极管的侧面之上,以进一步加强光放出。该LEEs用来重新导向或聚焦光,否则将会通过在一标准发光二极管结构中的TIR被补捉或吸收。其形状可被弯曲(突出或凹入),或是片段线性,使该结构的形状影响光放出以及光的最终输出方向。在所述微发光二极管之间的LEEs与由该微发光二极管侧面漏出的光互相作用。此互相作用可防止反射回到该发光二极管的光被吸收,因此增加由该发光二极管出来的有用光。
本发明的这些及其它更多特征和好处对于本领域的那些专业人士可由以下的详细说明,并配合附图可以更加了解,其中:
附图简述
图1所示为一具有一微发光二极管数组的新发光二极管的平面图,该微发光二极管数组具有一在一电绝缘层上的互连电流扩展栅格;
图2所示为图1中该新发光二极管沿截面线2-2的剖面图;
图3所示为使用覆晶安装将其微发光二极管数组接合到一次固定层的该新发光二极管的另一具体实施例的剖面图;
图4所示为导电互连电流扩展栅格和在该格栅通路下面的半导体材料的该新发光二极管的一第三具体实施例的平面图;
图5所示为图4中该发光二极管沿截面线4-4的剖面图;
图6所示为另一互连电流扩展栅格的平面图;
图7所示为又另一个互连电流扩展栅格的平面图;
图8所示为可在该微发光二极管之间成一体的LEEs的基本形状的剖面图;
图9所示为具有在该微发光二极管之间形成的不同的LEEs的该新发光二极管的剖面图,;
图10所示为具有随机构造表面形式的LEEs的该新发光二极管的剖面图;
图11所示为图10中该微发光二极管数组的剖面图,其具有一直接地位于该电流扩展栅格下面的电流阻隔层;
图12所示为具有与微发光二极管的侧表面成一体的LEEs的该新发光二极管的剖面图;
图13所示为具有弯曲表面的LEEs与微发光二极管的侧面成一体的该新发光二极管的剖面图;
图14所示为具有弯曲表面的LEEs与微发光二极管的侧面和中间成一体的该新发光二极管的剖面图;及
图15所示为图4的具有弯曲的LEEs的该新发光二极管的剖面图。
发明详细说明
图1及2所示为根据本发明建构的该新发光二极管10的一具体实施例。该发光二极管包含一微发光二极管12的数组,每个微发光二极管12皆被隔离,并具有其本身的夹在相对掺杂层16及18之间的半导体材料活动层14。在较佳的微发光二极管中,其上层16为p-型,而下层18为n-型,虽然相对掺杂在层16,18中仍然可以达成。
该新发光二极管也包含一第一展开层20,其将电流由n-接触垫22扩展到每个微发光二极管的底层18。因为在该较佳具体实施例中的底层18为n-型,该接触垫22即称之为n-接触垫。一绝缘层23沉积在该微发光二极管数组之上,其覆盖了每个微发光二极管以及在微发光二极管之间的沟槽中第一展开器的表面。一第二展开层,较佳地是一互连电流扩展栅格24的形式,其系沉积在所述绝缘层上,所述绝缘层具有栅格的导电通路通过该微发光二极管。一p-接触点26系沉积在该栅格24上,而自该接触点的电流扩展穿过该栅格到每个微发光二极管12的上层16。因为在该较佳具体实施例中的上层16为p-型,该接触点26即称之为p-接触点。
一孔系形成于每个微发光二极管之上而穿过所述绝缘层,一微发光二极管接触点29包含在每个绝缘层孔中以提供在栅格24和微发光二极管的上层16之间的接触点。所述微发光二极管(除了孔之外)和所述第一展开层的表面系通过所述绝缘层23与所述电流扩展栅格电绝缘。整个结构在一基板28上形成且微发光二极管形成一数组,当一偏压施加于接触点22及26时即发光。在另一具体实施例中,一透明导电片被用作为第二展开层来代替栅格24。
该新发光二极管10系因为由绝缘的微发光二极管提供增加的发射表面而增强了光放射。由每个微发光二极管的活动层所产生的光仅在一小段距离之后即与该微发光二极管的边缘相互作用。如果该光是在该关键角度之内,其可从微发光二极管漏出,并有利于该发光二极管的光放射。新发光二极管特别有利于发光二极管结构,其中一部份的发射光由于在电流展开器基板接口处的整体内部反射(TIR)而不能传送到基板。这种状况发生在蓝宝石,AlN,或MgO基板上以GaN为主的发光二极管。
新发光二极管10通过先沉积第一展开层20在基板28上来制造。一具有一n-型,p-型及一活动层的外延生长的发光二极管结构,接着在第一展开层20上形成。该微发光二极管系使用半导体蚀刻技术,蚀刻去除部份的结构而由该发光二极管结构形成,例如湿式化学蚀刻,活性离子蚀刻(RIE),离子研磨,或任何其它用于移除半导体材料的技术。
每个剩余的微发光二极管形成一独立的和电绝缘的装置,其具有由相对掺杂层16及18所环绕的一活动层。该微发光二极管12的形状及位置皆有不同,每个微发光二极管的较佳形状为圆柱形。当由上方观视时,每个微发光二极管即呈现为圆形,其直径为1到50微米之间。该微发光二极管较佳地是形成在一封闭内以使可用的微发光二极管空间最大化。相邻微发光二极管之间的隔离较佳的范围是在1到50μm,虽然该隔离并非此发明的关键。绝缘器层23可由不同的方法来沉积在整个结构上,例如蒸发,化学气相沉积(CVD)或溅镀。然后开口即被蚀刻在每个微发光二极管12上的绝缘层23。微发光二极管接触点及导电栅格然后通过标准的沉积技术来沉积。
所述第一展开层20既可以是一沉积在基板上的导电层,又可是该基板本身,如果其是导电的话。较佳的以GaN为主的发光二极管的导电基板包含GaN或碳化硅(SiC)。SiC具有更密集的晶格而符合第三族氮化物,例如GaN,而使第三族氮化物薄膜具有高品质。碳化硅也具有一非常高的热导电性,所以在碳化硅上的第三族氮化物装置的整体输出功率不限于该基板的热消散(如一些形成在蓝宝石上的装置)。SiC基板可由美国North Carolina,Durham的CreeResearch公司获得,其制造方法的文献可见于美国专利编号34,861;4,946,547及5,200,022。
如果所述基板为电流展开层,底部接触点可通过任何该基板上暴露的表面金属化来沉积。较佳的发光二极管具有微发光二极管12,其以AlGaInN为主,而以一p-型表面作为其上层16。所述基板为蓝宝石,第一展开器为n-型AlGaInN(或其合金),而金属化接触点为Al/Ni/Au,Al/Ti/Au,或Al/Pt/Au。所述绝缘层23可由许多材料制成,例如,但不限于,SiN,SiO2,或AlN。
所述栅格24可以是任何电导材料,包含金属,半金属,及半导体。其可由Al,Ag,Al/Au,Ag/Au,Ti/Pt/Au,Al/Ti/Au,Al/Ni/Au,Al/Pt/Au或其组合来制成。另外,所述栅格可由一薄的半导体金属来制成,例如Pd,Pt,Pd/Au,Pt/Au,Ni/Au,NiO/Au或其合金来制成。该栅格24可由许多惯用的方法而沉积在所述新发光二极管上,而较佳的方法为蒸发或溅镀。在该较佳具体实施例中,电流扩展栅格24的通路系在1到10μm之间的宽度。微发光二极管接触点29可由Pt,Pt/Au,Pd,Pd/Au,Ni/Au,NiO,或NiO/Au制成。p-接触点26可以沉积在所述互连栅格24上的不同位置,以允许来自接触点的电流扩展到该栅格中。
图3所示为根据本发明所建构的发光二极管30的一第二具体实施例,其利用覆晶安装。如上所述,微发光二极管32系通过蚀刻去除一完整发光二极管结构的半导体材料来形成在一数组中。每个微发光二极管32具有由两个相对掺杂层所包围的一活动层。微发光二极管的配置及尺寸类似于上述的具体实施例。然而,在此具体实施例中,每个微发光二极管具有成角度的侧表面,其上层比其底层要窄。如上所述,微发光二极管数组在一形成在一基板36之上的第一展开层34之上形成。一绝缘层38覆盖微发光二极管和相邻微发光二极管之间的第一展开器的表面。在每个微发光二极管32之上,一孔包含在一上接触点40的绝缘层中。一第二展开层42披覆整个微发光二极管数组以与上接触点40互连。
与微发光二极管相对的第二展开器42的表面,通过一接合媒体与一次固定层46上的反射金属层48接合。一p-接触点44系包含于金属层48,而第二接触点的电流流经第二展开器,到达上接触点40及微发光二极管32的上层。在所述金属层48中有一裂缝,n-接触层50在部分金属层48上形成,将具有p-接触点的该部分金属层电绝缘。指形件49接合在次固定层和第一展开器之间,自接触点50通过金属层48的电流流经指形件到达第一展开器34。该电流再流经第一展开器而到达微发光二极管的底层。
在此覆晶具体实施例中,自发光二极管50的光主要是发射通过基板36。第二展开器42可以是光学式地反射以使微发光二极管32发射的在第二展开器42的方向上的光反射向发光二极管的基板36。Al或Ag较佳地是用作为第二展开器,而每个微发光二极管32即以AlGaInN为主,及一p-型底层。每个上接触窗40较佳地是为Pt,Pt/Au,Pd,Pd/Au,Ni/Au,NiO或NiO/Au。
此具体实施例提供增加的侧壁与发射光相互作用作为一绝缘的微发光二极管。沈积在微发光二极管之间的第二展开器42的部份做为LEEs,将光由微发光二极管反射向基板。此架构也提供用来改善将热自新发光二极管芯片传送至次固定层。
图4及5所示为该新发光二极管51的另一具体实施例,其不具有一绝缘层将第一展开器及第二展开器绝缘。而是微发光二极管52通过一互连栅格54的导电通路与微发光二极管邻接,其中该通路的下方有半导体材料。每个栅格54中的开口55系当制造发光二极管50时,由该发光二极管结构蚀刻出来的半导体材料的区域。该结构仍保持在该栅格54之下的部份为微发光二极管52,并做为该微发光二极管之间的栅格通路53之下的半导体材料。微发光二极管及在通路之下的材料包含一由两个相对掺杂层所包围的活动层,而整个结构在一第一展开层56及一基板58之上形成。
一沉积在第一展开器上的第一接触点60施加电流到微发光二极管的底层,一包含在电流扩展栅格上的第二接触点62扩展电流到微发光二极管的上层。当一偏压施加到该接触点60及62,电流即施加到该微发光二极管上,所有在导电通路下的半导体材料即发光。在该通路下,自微发光二极管的侧面漏出的光,可避免整体内部反射。因此本技术可应用于在任何基板上的任何发光二极管结构,并以标准处理技术来建构。
发光二极管51系通过先沉积第一展开层56在基板58上来制造,然后即形成一连续发光二极管结构,其覆盖电流展开层56。所述栅格54沉积在该发光二极管结构上,及在栅格开口中可见到的部分发光二极管结构可由不同的方法来蚀刻去除,例如湿式化学蚀刻,反应离子蚀刻(RIE),离子研磨,或任何其它用于移除半导体材料的技术。该部份发光二极管结构也被蚀刻来提供一接触垫60区域,而沉积出接触垫60及62。栅格54可用任何电气导电材料来制造,包含但不限于金属,半金属,半导体,或其组合。较佳微发光二极管系以GaN为主,而每个微发光二极管的上层55为一p-型AlGaInN或任何其合金,而栅格54较佳地是以一薄金属来制造,例如Ni,Pd,Au,Pt或其任何组合。
图4中的虚线描述了微发光二极管之一以及可包含LEEs的包围微发光二极管的区域以进一步加强光放出,如以上的详细说明。
图6及7所示为具有不同的微发光二极管及栅格样式72及82(当然可用许多不同的样式)的新发光二极管的两个额外的具体实施例70和80。每个实施例具有一个别的底部扩展接触点73及83。在图6中,该微发光二极管74的电流交叉互连通过不同的通路流经每个微发光二极管。在每条通路下有半导体材料将其与第一展开层隔离。栅格72设有一方形的开口数组样式用于光相互作用。
栅格54比栅格72更好。在发光二极管70中,TIR光可反射到栅格的不同导电通路之一并反射于发光二极管之间,且不会与该微发光二极管的表面之一来相互作用。在栅格中或在层下的光损失将会造成此TIR光的一部份在其漏出新发光二极管的最终边缘之外之前被吸收掉。栅格54会因为发射自微发光二极管的光将在仅行进一短距离之后(最多为两个微发光二极管的长度)到达一侧表面而减少此问题,因此增加离开装置的光。
在图7中,微发光二极管系随机性地成形,并具有随机的互连通路。当然,在该通路下有半导体材料。该随机样式降低了TIR的行进通路数目,而在其在格栅开口之一中遇到微发光二极管之一之前。如上所述,在图6及7中包围微发光二极管的虚线表示微发光二极管76及86有LEEs包围其边缘,如在下面的完整说明。
开口之间的开口尺寸及距离较佳地是在1到30μm之间,但可以较大或较小。该开口的样式可以是非周期的,或是周期的,因微发光二极管边缘的光相互作用的本质并不需要以上的条件。在一p-型AlGaInN层上的较佳具体实施例中,栅格开口系在1微米到20μm之间,微发光二极管的宽度则在1μm到30μm之间。
先前所有的三个具体实施例可与微发光二极管之间的LEEs成一体以进一步增加光发射。该LEEs既可在微发光二极管的侧面上形成,又可在第一展开层的表面上,或是在那些不具有第一展开层的具体实施例中的导电基板上形成。
图8所示为一些另可供选择的LEEs形状,其可包含在此发明的具体实施例中,虽然可以使用其它的形状,而本发明的范围也不限于所示的形状。LEEs82,84,86具有曲面,而LEEs 88,90,92,94为片段线性的表面。另外,LEE可为一随机粗糙层,其可做为一光分散器。
LEEs可用标准蚀刻技术来形成,例如湿式化学蚀刻,RIE,或离子研磨。在该较佳具体实施例中,LEEs系使用一商用的聚合物而形成(例如一UV或e-beam敏感光阻),其做为一剥除蚀刻光罩。此聚合物系先被沉积,并形成为类似方形的边缘。该聚合物会加热到一个温度,并如玻璃般回流,而构成一逐渐线性或弯曲的形状到该聚合物的边缘。该聚合物厚度,样式形状,加热温度及加热时间,将决定该边缘形状。该样式利用RIE转移到AlGaInN为主的微发光二极管。直线及弯曲的LEEs可用此方法轻易地制造,而片段线性的LEEs可使用多重剥除光罩而容易地形成。
用来形成LEEs的第二种技术是使用负极UV-曝光光阻。首先,光阻系暴露一特定的曝光时间,并可视为来产生一负极性。然后该光阻即显影来在其截面产生一底部切除的弯曲或直线形状。然后此样式可经由一干式蚀刻技术而转移到该半导体材料。对这两个具体实施例而言,干式蚀刻状况也会影响半导体材料中镜片的最终形状。
图9-15所示为新发光二极管的具体实施例,其LEEs可以许多方式与微发光二极管数组成一体来加强光放出。这些具体实施例代表一些可能的方式,而使该LEEs可根据此发明来使用,而此发明的范围亦不限于所述的具体实施例。
图9所示为一新的发光二极管100,其类似于图4及5中的发光二极管50,但在微发光二极管104之间具有LEEs101,102,103。该LEEs 101,102,103允许光被导向穿过一微发光二极管的侧面来反射出该LEEs,并重新导向离开基板到一包装中。透过TIR而反射离开基板108及第一展开层106之间的接口处的光束,也可与LEEs101,102,103互相作用而漏出该包装以提供一较高的光输出。在图8中所述的LEEs可以沉积在新发光二极管上,或是加工到新发光二极管中。如前所述,LEE的厚度也可改变,较佳的范围是0.5μm到10μm。
图10所示为一新发光二极管110,其类似于图9的发光二极管100,但其在该微发光二极管113之间具有随机地粗糙化分散LEE112。与粗糙层互相作用的光允许TIR光到达其关键角度之内的表面,并在被吸收之前漏出。在该较佳具体实施例中,粗糙化的表面系使用聚苯乙烯或硅石微球粒,做为一蚀刻光罩来转移微米级的粗糙度到半导体中。随机粗糙度的厚度及宽度可小于20nm,或多到500nm,较佳的尺寸为由发光二极管产生的光波长的程度。
图11所示为一新发光二极管120,其类似于图10的发光二极管110,但包含在该微发光二极管中的一电流阻隔层。该阻隔层122导引电流流到分散LEE124之下,而增加光与LEE互相作用及漏出的机会。
有另一种作法是形成LEEs在微发光二极管之间,LEEs可直接地形成于微发光二极管的侧面之上。图12所示为一新发光二极管130,其类似于图9,10及11的发光二极管,但具有不同的LEEs131-133直接形成在每个微发光二极管的侧表面上。该LEEs可使用如前述相同的方法来形成。行进朝向微发光二极管侧表面的光被重新导向到会使光漏出基板134的表面之一之外,其系经由第一展开层135,或是经由微发光二极管132。由基板134反射回来的光也因为在微发光二极管边缘上的LEEs而具有增加的漏出机会。
图13所示为一新发光二极管140,其弯曲的LEEs142系形成于微发光二极管144的侧表面上。该弯曲的LEE142可提供额外的好处来将发光二极管的光聚焦到一更为良好定义的方向。LEEs142的厚度及宽度可随着任何一个LEE的较佳厚度而改变,其为0.1μm到50μm。
图14及15所示为两个额外的具体实施例。图14所示为一新发光二极管150,其组合弯曲的LEEs152在侧面上,如果微发光二极管154及完全弯曲的LEEs156位在该微发光二极管154之间。LEEs共同藉由将光线折射及反射出发光二极管包装来加强光放出。
图15所示为新的发光二极管160,其具有弯曲的LEEs162在微发光二极管164的侧面上,其使用覆晶安装,该具体实施例类似于图3所示的具体实施例。该第二展开器164为反射式,而基板166为主要的发射表面。LEEs162及第二展开器164的部份共同藉由将光经由基板而折射及反射出该发光二极管包装。
虽然本发明已藉由其某些较佳的架构来说明,其它的版本也是可能的。举例而言,在所述数组中微发光二极管的所述底层可互相接触。光放出结构也可用于许多不同的组合,并可以是许多不同的形状及尺寸。同时,前述的发光二极管结构可具有多于一个夹在相对掺杂层之间的活动层。因此,所附申请专利范围的精神及范围并不受限于其前述的较佳具体实施例。
Claims (38)
1.一种具有加强光放出的发光二极管(LED),包含:
一导电性第一展开层(20);
多个微发光二极管(micro-LEDs)(12)分别地沉积在所述第一展开层(20)的一表面上,每个所述微发光二极管皆包含:
一p-型层(16);
一n-型层(18);
一活动层(14),其夹在所述p-型与n-型层(16,18)之间,其中所述p-型或n-型层为一上层,而另外一层则为下层,来自所述第一展开层(20)的电流流入到所述底层;
一第二展开层(24),其在所述微发光二极管(12)之上,来自所述第二展开层(24)的电流流入到所述上层,一偏压施加在所述第一及第二展开层(20,24)之间而使所述微发光二极管(12)发光。
2.根据权利要求1的发光二极管,其特征在于所述第一展开层(20)系一导电基板。
3.根据权利要求1的发光二极管,其特征在于其进一步包含一基板(28),该基板与所述第一展开层(20)的表面邻接,并与所述微发光二极管(12)相对。
4.根据权利要求3的发光二极管,其特征在于所述基板(28)系隔离的且所述第一展开层(20)系一外延沉积的半导体材料。
5.根据权利要求1的发光二极管,其特征在于其进一步包含一绝缘层(23),该绝缘层覆盖所述微发光二极管(12)以及位于所述微发光二极管(12)之间的所述第一展开层(20)的表面,所述绝缘层(23)沉积在所述第二展开层(24)和所述微发光二极管(12)之间。
6.根据权利要求1的发光二极管,其特征在于所述绝缘层(23)在每个所述微发光二极管(12)上均设有孔,所述第二展开层(24)藉由该孔与每个所述微发光二极管(12)接触。
7.根据权利要求6的发光二极管,其特征在于所述第二展开层(24)系透明导电材料片。
8.根据权利要求6的发光二极管,其特征在于所述第二展开层(24)为一互连的电流扩展栅格,其具有多个互连的导电通路,每个所述微发光二极管(12)其上均设有一个或多个导电通路,并透过所述孔与所述上层接触。
9.根据权利要求6的发光二极管,其特征在于所述第二展开层(24)系一导电材料。
10.根据权利要求1的发光二极管,其特征在于其进一步包含光提取组件(LEEs)(82,84,86,88,90,92,94),其与所述微发光二极管(12)成一体以与自微发光二极管(12)漏出的光相互作用,从而进一步强化自所述发光二极管放出的光。
11.根据权利要求10的发光二极管,其特征在于所述光提取组件(LEEs)(101,102,103)系沉积在所述微发光二极管(12)之间。
12.根据权利要求10的发光二极管,其特征在于所述光提取组件(LEEs)(101,102,103)系沉积在所述第一展开层(106)的表面上,在所述微发光二极管(108)之间。
13.根据权利要求10的发光二极管,其特征在于所述光提取组件(LEEs)(131,132,134)系整合在所述微发光二极管(104)的侧表面上。
14.根据权利要求10的发光二极管,其特征在于所述光提取组件(LEEs)(152,156)系与所述微发光二极管(154)的侧表面成一体并沉积在所述微发光二极管(154)之间。
15.根据权利要求10的发光二极管,其特征在于所述光提取组件(LEEs)(82,84,86)具有曲面。
16.根据权利要求10的发光二极管,其特征在于所述光提取组件(LEEs)(88,90,92,94)具有线性或片段线性表面。
17.根据权利要求10的发光二极管,其特征在于所述光提取组件(LEEs)(112)系随机粗糙的表面。
18.根据权利要求1的发光二极管,其特征在于其进一步包含个别的电接触点(22,26)沉积在所述第一和第二展开层(20,24)上,一偏压施加在所述接触点促使所述活动层(14)发光。
19.根据权利要求6的发光二极管,其特征在于所述第二展开层(42)为一反射性金属层,其沉积在该微发光二极管(32)之上,所述发光二极管进一步包含基板(36),该基板与该第一展开器(34)的表面邻接而与所述微发光二极管(32)相对,及一固接于所述金属层(42)的次固定层(46),所述发光二极管的所述基板(36)即成为主要的发光面。
20.根据权利要求19的发光二极管,其特征在于其进一步包含一导电指形件(49),该指形件位于所述次固定层(46)和所述第一展开层(34)之间,一在所述次固定层(46)上的第一接触点(50)与所述导电指形件(49)连接,以及一在所述次固定层上的第二接触点(44)与所述金属层(48)连接,所述微发光二极管(32)当一偏压施加在所述接触点(44,50)之间时,即发光。
21.根据权利要求1的发光二极管,其特征在于所述微发光二极管(12)的所述底层系连在一起,而所述活性层和上层不连一起。
22.根据权利要求1的发光二极管,其特征在于所述第二展开层为一互连的电流扩展栅格(54),其具有在微发光二极管(52)之间的导电通路(53),所述发光二极管进一步包含在微发光二极管(52)之间所述导电通路(53)下面的半导体材料,所述半导体材料将所述第一展开层(56)和所述导电通路(53)电绝缘。
23.根据权利要求22的发光二极管,其特征在于所述半导体材料包含一夹在两相对层(16,18)之间的活动层(14)。
24.一种发光二极管(LED),包含:
一第一展开层(18);
一光发射组件(12)的数组,其沉积在所述第一展开层(18)上;
一第二展开层(24),其沉积在所述发射组件(12)的所述数组上,所述第一展开层(20)将所述第二展开层(24)电绝缘;及
分别位于所述第一及第二展开层(20,24)上的第一及第二接触点(22,26),一偏压施加于所述接触点(22,26)即可使所述发射组件(12)的数组发光。
25.根据权利要求24的发光二极管,其特征在于所述发射组件(12)系微发光二极管,每个微发光二极管均设有一活动层(14)夹在所述两相对层(16,18)之间。
26.根据权利要求24的发光二极管,其特征在于所述相对层(16,18)系p-型和n-型层,所述p-型或n-型层系与所述第一展开层(20)邻接的一底层,而另一所述层则为与所述第二展开层(24)邻接的一上层,所述第一展开层(20)的电流流到所述底层,所述第二展开层(24)的电流流到所述上层。
27.根据权利要求24的发光二极管,其特征在于其进一步包含一基板(28),该基板与所述第一展开层(20)的表面邻接,并与所述发射组件(12)相对。
28.根据权利要求24的发光二极管,其特征在于所述第二展开层(24)为一覆盖所述发射组件(12)的互连的电流扩展栅格,并在所述发射组件(12)之间具有多个互连的导电通路。
29.根据权利要求24的发光二极管,其特征在于所述第二展开层(24)系透明导电材料片。
30.根据权利要求28的发光二极管,其特征在于其进一步包含一绝缘层(33),该绝缘层覆盖所述发射组件(12)以及位于所述发射组件(12)之间的所述第一展开层(20)的表面,所述第二层(24)系沉积在所述绝缘层(23)上,所述绝缘层(23)将所述第一展开层(20)和所述第二展开层(24)电绝缘。
31.根据权利要求30的发光二极管,其特征在于所述绝缘层(23)在每个所述发射组件(12)上均设有孔,所述第二展开层(24)藉由该孔与每个所述发射组件(12)接触。
32.根据权利要求31的发光二极管,其特征在于所述每个发射组件(12)其上均具有一或多个导电通路,并藉由所述孔与所述发射组件接触。
33.根据权利要求28的发光二极管,其特征在于其进一步包含位于发射组件(52)间的所述导电通路(53)下面的半导体材料,所述半导体材料将所述第一展开层(56)和所述导电通路(53)电绝缘。
34.根据权利要求33的发光二极管,其特征在于所述半导体材料包含一被两相对层(16,18)包围的活动层(14)。
35.根据权利要求24的发光二极管,其特征在于其进一步包含位于所述发射组件之间重新导向光从所述发射组件(104)发射的光提取组件(101,102,103)。
36.根据权利要求24的发光二极管,其特征在于其进一步包含在所述发射组件(104)的侧表面上重新导向光从所述发射组件(104)发射的光提取组件(131,132,134)。
37.一种发光二极管(LED),包含:
一第一展开层(56);
一微发光二极管(52)的数组,其沉积在所述第一展开层(56)上,一施加于所述第一展开层(56)的电流流到所述微发光二极管(52);
一互连的电流扩展栅格(54)沉积在所述微发光二极管(52)之上,所述栅格在所述微发光二极管(52)之间设有导电通路(53),一施加于所述栅格(54)的电流流到所述微发光二极管(52);
半导体材料,其位于所述导电通路(53)之下,及微发光二极管(52)之间,所述半导体材料将所述第一展开层(56)与所述导电通路(53)电绝缘;
分别位于所述第一及第二展开层(56,54)上的第一及第二接触点(60,62),一偏压施加于所述接触点(60,62)即可使所述发射组件(52)的数组发光。
38.根据权利要求37的发光二极管,其特征在于所述半导体材料包含一夹在两相对层(16,18)之间的活动层(14)。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16881799P | 1999-12-03 | 1999-12-03 | |
US60/168,817 | 1999-12-03 | ||
US09/713,576 | 2000-11-14 | ||
US09/713,576 US6410942B1 (en) | 1999-12-03 | 2000-11-14 | Enhanced light extraction through the use of micro-LED arrays |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1402880A true CN1402880A (zh) | 2003-03-12 |
CN1229871C CN1229871C (zh) | 2005-11-30 |
Family
ID=26864480
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB008166013A Expired - Lifetime CN1229871C (zh) | 1999-12-03 | 2000-11-20 | 加强光放出的微发光二极管阵列 |
Country Status (9)
Country | Link |
---|---|
US (1) | US6410942B1 (zh) |
EP (3) | EP1234334B1 (zh) |
JP (1) | JP5511114B2 (zh) |
KR (1) | KR100731673B1 (zh) |
CN (1) | CN1229871C (zh) |
AU (1) | AU1790501A (zh) |
CA (1) | CA2393007C (zh) |
HK (1) | HK1048707A1 (zh) |
WO (1) | WO2001041219A1 (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102169933A (zh) * | 2010-02-19 | 2011-08-31 | 三星Led株式会社 | 具有多单元阵列的半导体发光器件、发光模块和照明设备 |
TWI486093B (zh) * | 2009-02-26 | 2015-05-21 | Bridgelux Inc | 利用區段式LEDs來補償個別區段式LED在光輸出上的製程差異之光源 |
CN104969106A (zh) * | 2012-11-15 | 2015-10-07 | 4233999加拿大股份有限公司 | 采用微型发光二极管进行高速短距离光通信的方法和装置 |
CN106206899A (zh) * | 2014-10-08 | 2016-12-07 | 美科米尚技术有限公司 | 微型发光二极管、其操作方法与制造方法 |
CN106486470A (zh) * | 2015-08-31 | 2017-03-08 | 三星显示有限公司 | 发光二极管结构和显示装置 |
CN107611153A (zh) * | 2016-07-12 | 2018-01-19 | 三星显示有限公司 | 显示设备和制造该显示设备的方法 |
WO2018152887A1 (zh) * | 2017-02-27 | 2018-08-30 | 深圳市华星光电技术有限公司 | 微发光二极管阵列基板及显示面板 |
CN111149224A (zh) * | 2017-09-29 | 2020-05-12 | 脸谱科技有限责任公司 | 具有底部n触点的台面形微型发光二极管 |
Families Citing this family (348)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6657236B1 (en) | 1999-12-03 | 2003-12-02 | Cree Lighting Company | Enhanced light extraction in LEDs through the use of internal and external optical elements |
US20020017652A1 (en) * | 2000-08-08 | 2002-02-14 | Stefan Illek | Semiconductor chip for optoelectronics |
US7547921B2 (en) * | 2000-08-08 | 2009-06-16 | Osram Opto Semiconductors Gmbh | Semiconductor chip for optoelectronics |
US7053419B1 (en) | 2000-09-12 | 2006-05-30 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
JP2002141556A (ja) | 2000-09-12 | 2002-05-17 | Lumileds Lighting Us Llc | 改良された光抽出効果を有する発光ダイオード |
US7064355B2 (en) | 2000-09-12 | 2006-06-20 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
JP2002198560A (ja) * | 2000-12-26 | 2002-07-12 | Sharp Corp | 半導体発光素子およびその製造方法 |
US6791119B2 (en) * | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
JP4724924B2 (ja) * | 2001-02-08 | 2011-07-13 | ソニー株式会社 | 表示装置の製造方法 |
US6746889B1 (en) * | 2001-03-27 | 2004-06-08 | Emcore Corporation | Optoelectronic device with improved light extraction |
JP2002344011A (ja) * | 2001-05-15 | 2002-11-29 | Sony Corp | 表示素子及びこれを用いた表示装置 |
US6897704B2 (en) * | 2001-05-25 | 2005-05-24 | Thunder Creative Technologies, Inc. | Electronic isolator |
TW583348B (en) * | 2001-06-19 | 2004-04-11 | Phoenix Prec Technology Corp | A method for electroplating Ni/Au layer substrate without using electroplating wire |
JP4055503B2 (ja) | 2001-07-24 | 2008-03-05 | 日亜化学工業株式会社 | 半導体発光素子 |
WO2003026355A2 (de) * | 2001-08-30 | 2003-03-27 | Osram Opto Semiconductors Gmbh | Elektrolumineszierender körper |
TW523939B (en) * | 2001-11-07 | 2003-03-11 | Nat Univ Chung Hsing | High-efficient light emitting diode and its manufacturing method |
US6881983B2 (en) * | 2002-02-25 | 2005-04-19 | Kopin Corporation | Efficient light emitting diodes and lasers |
JP3776824B2 (ja) | 2002-04-05 | 2006-05-17 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
US20030189215A1 (en) | 2002-04-09 | 2003-10-09 | Jong-Lam Lee | Method of fabricating vertical structure leds |
JP4585014B2 (ja) * | 2002-04-12 | 2010-11-24 | ソウル セミコンダクター カンパニー リミテッド | 発光装置 |
US20060175625A1 (en) * | 2002-05-28 | 2006-08-10 | Ryoji Yokotani | Light emitting element, lighting device and surface emission illuminating device using it |
US6841802B2 (en) * | 2002-06-26 | 2005-01-11 | Oriol, Inc. | Thin film light emitting diode |
US6955985B2 (en) * | 2002-06-28 | 2005-10-18 | Kopin Corporation | Domain epitaxy for thin film growth |
DE10234977A1 (de) * | 2002-07-31 | 2004-02-12 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Dünnschicht-Halbleiterbauelement auf GaN-Basis |
KR101052139B1 (ko) * | 2002-08-01 | 2011-07-26 | 니치아 카가쿠 고교 가부시키가이샤 | 반도체 발광 소자 및 그 제조 방법과 그것을 이용한 발광장치 |
KR20040013998A (ko) * | 2002-08-09 | 2004-02-14 | 엘지전자 주식회사 | 표면 방출형 발광 다이오드의 제조방법 |
EP1892764B1 (en) | 2002-08-29 | 2016-03-09 | Seoul Semiconductor Co., Ltd. | Light-emitting device having light-emitting diodes |
JP3956918B2 (ja) | 2002-10-03 | 2007-08-08 | 日亜化学工業株式会社 | 発光ダイオード |
US7071494B2 (en) * | 2002-12-11 | 2006-07-04 | Lumileds Lighting U.S. Llc | Light emitting device with enhanced optical scattering |
JP2006512781A (ja) * | 2002-12-30 | 2006-04-13 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | ボディの表面を粗面化する方法及びオプトエレクトロニクスデバイス |
US7042020B2 (en) * | 2003-02-14 | 2006-05-09 | Cree, Inc. | Light emitting device incorporating a luminescent material |
KR100964399B1 (ko) * | 2003-03-08 | 2010-06-17 | 삼성전자주식회사 | 반도체 레이저 다이오드 및 이를 채용한 반도체 레이저다이오드 조립체 |
US7083993B2 (en) * | 2003-04-15 | 2006-08-01 | Luminus Devices, Inc. | Methods of making multi-layer light emitting devices |
US7105861B2 (en) * | 2003-04-15 | 2006-09-12 | Luminus Devices, Inc. | Electronic device contact structures |
US7262550B2 (en) * | 2003-04-15 | 2007-08-28 | Luminus Devices, Inc. | Light emitting diode utilizing a physical pattern |
US7166871B2 (en) * | 2003-04-15 | 2007-01-23 | Luminus Devices, Inc. | Light emitting systems |
US7667238B2 (en) * | 2003-04-15 | 2010-02-23 | Luminus Devices, Inc. | Light emitting devices for liquid crystal displays |
US7074631B2 (en) * | 2003-04-15 | 2006-07-11 | Luminus Devices, Inc. | Light emitting device methods |
US7521854B2 (en) * | 2003-04-15 | 2009-04-21 | Luminus Devices, Inc. | Patterned light emitting devices and extraction efficiencies related to the same |
US6831302B2 (en) | 2003-04-15 | 2004-12-14 | Luminus Devices, Inc. | Light emitting devices with improved extraction efficiency |
US7084434B2 (en) * | 2003-04-15 | 2006-08-01 | Luminus Devices, Inc. | Uniform color phosphor-coated light-emitting diode |
US7098589B2 (en) * | 2003-04-15 | 2006-08-29 | Luminus Devices, Inc. | Light emitting devices with high light collimation |
US7211831B2 (en) * | 2003-04-15 | 2007-05-01 | Luminus Devices, Inc. | Light emitting device with patterned surfaces |
US20040259279A1 (en) * | 2003-04-15 | 2004-12-23 | Erchak Alexei A. | Light emitting device methods |
US7274043B2 (en) * | 2003-04-15 | 2007-09-25 | Luminus Devices, Inc. | Light emitting diode systems |
KR101148332B1 (ko) * | 2003-04-30 | 2012-05-25 | 크리, 인코포레이티드 | 콤팩트 광학 특성을 지닌 높은 전력의 발광 소자 패키지 |
US7005679B2 (en) | 2003-05-01 | 2006-02-28 | Cree, Inc. | Multiple component solid state white light |
ATE474332T1 (de) * | 2003-05-02 | 2010-07-15 | Univ College Cork Nat Univ Ie | Lichtemittierende mesastrukturen mit hohem höhe- zu-breite-verhältnis und quasi-parabolischen seitenwänden und ihre herstellung |
US6885034B1 (en) | 2003-05-09 | 2005-04-26 | Winston Vaughan Schoenfeld | Light emitting diode having multiple pits |
US7122841B2 (en) | 2003-06-04 | 2006-10-17 | Kopin Corporation | Bonding pad for gallium nitride-based light-emitting devices |
US20050000913A1 (en) * | 2003-07-03 | 2005-01-06 | Mark Betterly | Fluid treatment system |
US7009213B2 (en) | 2003-07-31 | 2006-03-07 | Lumileds Lighting U.S., Llc | Light emitting devices with improved light extraction efficiency |
EP1652238B1 (en) * | 2003-08-08 | 2010-10-27 | Kang, Sang-kyu | Nitride micro light emitting diode with high brightness and method of manufacturing the same |
EP3699963A1 (en) * | 2003-08-19 | 2020-08-26 | Nichia Corporation | Semiconductor light emitting diode and method of manufacturing its substrate |
US7344903B2 (en) * | 2003-09-17 | 2008-03-18 | Luminus Devices, Inc. | Light emitting device processes |
US7341880B2 (en) * | 2003-09-17 | 2008-03-11 | Luminus Devices, Inc. | Light emitting device processes |
US7915085B2 (en) | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
JP4881003B2 (ja) * | 2003-09-26 | 2012-02-22 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 放射を発する薄膜半導体チップ |
EP1697983B1 (en) | 2003-12-09 | 2012-06-13 | The Regents of The University of California | Highly efficient gallium nitride based light emitting diodes having surface roughening |
US7450311B2 (en) | 2003-12-12 | 2008-11-11 | Luminus Devices, Inc. | Optical display systems and methods |
JP2005191099A (ja) * | 2003-12-24 | 2005-07-14 | ▲さん▼圓光電股▲ふん▼有限公司 | 発光ダイオード装置 |
US20050179046A1 (en) * | 2004-02-13 | 2005-08-18 | Kopin Corporation | P-type electrodes in gallium nitride-based light-emitting devices |
US20050179042A1 (en) * | 2004-02-13 | 2005-08-18 | Kopin Corporation | Monolithic integration and enhanced light extraction in gallium nitride-based light-emitting devices |
TWM271252U (en) * | 2004-12-14 | 2005-07-21 | Niching Ind Corp | Package structure of light-emitting device |
JP2005259891A (ja) * | 2004-03-10 | 2005-09-22 | Toyoda Gosei Co Ltd | 発光装置 |
US7202141B2 (en) * | 2004-03-29 | 2007-04-10 | J.P. Sercel Associates, Inc. | Method of separating layers of material |
US7419912B2 (en) * | 2004-04-01 | 2008-09-02 | Cree, Inc. | Laser patterning of light emitting devices |
US7064356B2 (en) * | 2004-04-16 | 2006-06-20 | Gelcore, Llc | Flip chip light emitting diode with micromesas and a conductive mesh |
US7795623B2 (en) * | 2004-06-30 | 2010-09-14 | Cree, Inc. | Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures |
US7534633B2 (en) * | 2004-07-02 | 2009-05-19 | Cree, Inc. | LED with substrate modifications for enhanced light extraction and method of making same |
US20090023239A1 (en) * | 2004-07-22 | 2009-01-22 | Luminus Devices, Inc. | Light emitting device processes |
US20060038188A1 (en) | 2004-08-20 | 2006-02-23 | Erchak Alexei A | Light emitting diode systems |
US20060049418A1 (en) * | 2004-09-03 | 2006-03-09 | Tzi-Chi Wen | Epitaxial structure and fabrication method of nitride semiconductor device |
US7737459B2 (en) * | 2004-09-22 | 2010-06-15 | Cree, Inc. | High output group III nitride light emitting diodes |
US7259402B2 (en) * | 2004-09-22 | 2007-08-21 | Cree, Inc. | High efficiency group III nitride-silicon carbide light emitting diode |
US8513686B2 (en) * | 2004-09-22 | 2013-08-20 | Cree, Inc. | High output small area group III nitride LEDs |
US8174037B2 (en) | 2004-09-22 | 2012-05-08 | Cree, Inc. | High efficiency group III nitride LED with lenticular surface |
US7352006B2 (en) * | 2004-09-28 | 2008-04-01 | Goldeneye, Inc. | Light emitting diodes exhibiting both high reflectivity and high light extraction |
US7404756B2 (en) | 2004-10-29 | 2008-07-29 | 3M Innovative Properties Company | Process for manufacturing optical and semiconductor elements |
US20060091411A1 (en) | 2004-10-29 | 2006-05-04 | Ouderkirk Andrew J | High brightness LED package |
US7329982B2 (en) | 2004-10-29 | 2008-02-12 | 3M Innovative Properties Company | LED package with non-bonded optical element |
US7462502B2 (en) | 2004-11-12 | 2008-12-09 | Philips Lumileds Lighting Company, Llc | Color control by alteration of wavelength converting element |
US7419839B2 (en) | 2004-11-12 | 2008-09-02 | Philips Lumileds Lighting Company, Llc | Bonding an optical element to a light emitting device |
JP2006147679A (ja) * | 2004-11-17 | 2006-06-08 | Sony Corp | 集積型発光ダイオード、集積型発光ダイオードの製造方法、発光ダイオードディスプレイおよび発光ダイオード照明装置 |
US7304363B1 (en) | 2004-11-26 | 2007-12-04 | United States Of America As Represented By The Secretary Of The Army | Interacting current spreader and junction extender to increase the voltage blocked in the off state of a high power semiconductor device |
US20060124943A1 (en) * | 2004-12-14 | 2006-06-15 | Elite Optoelectronics Inc. | Large-sized light-emitting diodes with improved light extraction efficiency |
US8288942B2 (en) | 2004-12-28 | 2012-10-16 | Cree, Inc. | High efficacy white LED |
KR101138974B1 (ko) * | 2005-01-07 | 2012-04-25 | 서울옵토디바이스주식회사 | 발광 소자 및 이의 제조 방법 |
JP4687109B2 (ja) * | 2005-01-07 | 2011-05-25 | ソニー株式会社 | 集積型発光ダイオードの製造方法 |
US7524686B2 (en) * | 2005-01-11 | 2009-04-28 | Semileds Corporation | Method of making light emitting diodes (LEDs) with improved light extraction by roughening |
US7186580B2 (en) * | 2005-01-11 | 2007-03-06 | Semileds Corporation | Light emitting diodes (LEDs) with improved light extraction by roughening |
US20060154393A1 (en) * | 2005-01-11 | 2006-07-13 | Doan Trung T | Systems and methods for removing operating heat from a light emitting diode |
US20060151801A1 (en) * | 2005-01-11 | 2006-07-13 | Doan Trung T | Light emitting diode with thermo-electric cooler |
US7692207B2 (en) * | 2005-01-21 | 2010-04-06 | Luminus Devices, Inc. | Packaging designs for LEDs |
US7170100B2 (en) | 2005-01-21 | 2007-01-30 | Luminus Devices, Inc. | Packaging designs for LEDs |
US7335920B2 (en) | 2005-01-24 | 2008-02-26 | Cree, Inc. | LED with current confinement structure and surface roughening |
KR101138944B1 (ko) * | 2005-01-26 | 2012-04-25 | 서울옵토디바이스주식회사 | 직렬 연결된 복수개의 발광셀들을 갖는 발광 소자 및그것을 제조하는 방법 |
US7535028B2 (en) * | 2005-02-03 | 2009-05-19 | Ac Led Lighting, L.Lc. | Micro-LED based high voltage AC/DC indicator lamp |
JP2006261659A (ja) * | 2005-02-18 | 2006-09-28 | Sumitomo Chemical Co Ltd | 半導体発光素子の製造方法 |
US7932111B2 (en) | 2005-02-23 | 2011-04-26 | Cree, Inc. | Substrate removal process for high light extraction LEDs |
US20060204865A1 (en) * | 2005-03-08 | 2006-09-14 | Luminus Devices, Inc. | Patterned light-emitting devices |
US20070045640A1 (en) * | 2005-08-23 | 2007-03-01 | Erchak Alexei A | Light emitting devices for liquid crystal displays |
US8163575B2 (en) * | 2005-06-17 | 2012-04-24 | Philips Lumileds Lighting Company Llc | Grown photonic crystals in semiconductor light emitting devices |
KR100599012B1 (ko) | 2005-06-29 | 2006-07-12 | 서울옵토디바이스주식회사 | 열전도성 기판을 갖는 발광 다이오드 및 그것을 제조하는방법 |
US20090179211A1 (en) * | 2005-07-14 | 2009-07-16 | Tae-Kyung Yoo | Light emitting device |
US20070018182A1 (en) * | 2005-07-20 | 2007-01-25 | Goldeneye, Inc. | Light emitting diodes with improved light extraction and reflectivity |
US8674375B2 (en) * | 2005-07-21 | 2014-03-18 | Cree, Inc. | Roughened high refractive index layer/LED for high light extraction |
US7391059B2 (en) * | 2005-10-17 | 2008-06-24 | Luminus Devices, Inc. | Isotropic collimation devices and related methods |
US20070085098A1 (en) * | 2005-10-17 | 2007-04-19 | Luminus Devices, Inc. | Patterned devices and related methods |
US7348603B2 (en) * | 2005-10-17 | 2008-03-25 | Luminus Devices, Inc. | Anisotropic collimation devices and related methods |
US7388233B2 (en) * | 2005-10-17 | 2008-06-17 | Luminus Devices, Inc. | Patchwork patterned devices and related methods |
US20080099777A1 (en) * | 2005-10-19 | 2008-05-01 | Luminus Devices, Inc. | Light-emitting devices and related systems |
KR100779078B1 (ko) * | 2005-12-09 | 2007-11-27 | 한국전자통신연구원 | 빛의 방출 효율을 향상시킬 수 있는 실리콘 발광 소자 및그 제조방법 |
JP4908837B2 (ja) * | 2005-12-13 | 2012-04-04 | キヤノン株式会社 | 発光素子アレイ及び画像形成装置 |
EP1969633B1 (en) | 2005-12-22 | 2018-08-29 | Cree, Inc. | Lighting device |
US7772604B2 (en) | 2006-01-05 | 2010-08-10 | Illumitex | Separate optical device for directing light from an LED |
JP2007214260A (ja) * | 2006-02-08 | 2007-08-23 | Matsushita Electric Ind Co Ltd | 半導体発光素子およびその製造方法 |
KR20070088145A (ko) * | 2006-02-24 | 2007-08-29 | 엘지전자 주식회사 | 발광 다이오드 및 그 제조방법 |
US8008676B2 (en) | 2006-05-26 | 2011-08-30 | Cree, Inc. | Solid state light emitting device and method of making same |
KR20140116536A (ko) | 2006-05-31 | 2014-10-02 | 크리, 인코포레이티드 | 조명 장치 및 조명 방법 |
KR100759896B1 (ko) * | 2006-06-15 | 2007-09-18 | 삼성전자주식회사 | 적어도 하나의 발광소자가 장착된 백라이트 모듈 및 그제작 방법 |
US7674639B2 (en) * | 2006-08-14 | 2010-03-09 | Bridgelux, Inc | GaN based LED with etched exposed surface for improved light extraction efficiency and method for making the same |
CN101554089A (zh) * | 2006-08-23 | 2009-10-07 | 科锐Led照明科技公司 | 照明装置和照明方法 |
US20100224890A1 (en) * | 2006-09-18 | 2010-09-09 | Cree, Inc. | Light emitting diode chip with electrical insulation element |
US8087960B2 (en) | 2006-10-02 | 2012-01-03 | Illumitex, Inc. | LED system and method |
US20090275157A1 (en) * | 2006-10-02 | 2009-11-05 | Illumitex, Inc. | Optical device shaping |
US20080087875A1 (en) * | 2006-10-11 | 2008-04-17 | Feng-Hsu Fan | Protection for the epitaxial structure of metal devices |
US9318327B2 (en) | 2006-11-28 | 2016-04-19 | Cree, Inc. | Semiconductor devices having low threading dislocations and improved light extraction and methods of making the same |
EP2095011A1 (en) | 2006-12-04 | 2009-09-02 | Cree Led Lighting Solutions, Inc. | Lighting assembly and lighting method |
CN101622493A (zh) * | 2006-12-04 | 2010-01-06 | 科锐Led照明科技公司 | 照明装置和照明方法 |
US8110838B2 (en) * | 2006-12-08 | 2012-02-07 | Luminus Devices, Inc. | Spatial localization of light-generating portions in LEDs |
EP3848970A1 (en) * | 2007-01-22 | 2021-07-14 | Cree, Inc. | Multiple light emitting diode emitter |
TW200837943A (en) * | 2007-01-22 | 2008-09-16 | Led Lighting Fixtures Inc | Fault tolerant light emitters, systems incorporating fault tolerant light emitters and methods of fabricating fault tolerant light emitters |
US8110425B2 (en) | 2007-03-20 | 2012-02-07 | Luminus Devices, Inc. | Laser liftoff structure and related methods |
KR100849826B1 (ko) | 2007-03-29 | 2008-07-31 | 삼성전기주식회사 | 발광소자 및 이를 포함하는 패키지 |
WO2009012287A1 (en) * | 2007-07-17 | 2009-01-22 | Cree Led Lighting Solutions, Inc. | Optical elements with internal optical features and methods of fabricating same |
US8617997B2 (en) * | 2007-08-21 | 2013-12-31 | Cree, Inc. | Selective wet etching of gold-tin based solder |
US11114594B2 (en) * | 2007-08-24 | 2021-09-07 | Creeled, Inc. | Light emitting device packages using light scattering particles of different size |
US8368100B2 (en) * | 2007-11-14 | 2013-02-05 | Cree, Inc. | Semiconductor light emitting diodes having reflective structures and methods of fabricating same |
US9431589B2 (en) * | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
DE102008019902A1 (de) * | 2007-12-21 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Herstellungsverfahren für ein optoelektronisches Bauelement |
DE102008003182A1 (de) * | 2008-01-04 | 2009-07-09 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
JP2011512037A (ja) | 2008-02-08 | 2011-04-14 | イルミテックス, インコーポレイテッド | エミッタ層成形のためのシステムおよび方法 |
JP5094535B2 (ja) * | 2008-05-07 | 2012-12-12 | 富士フイルム株式会社 | 凹部形成方法、凹凸製品の製造方法、発光素子の製造方法および光学素子の製造方法 |
WO2009152237A1 (en) * | 2008-06-11 | 2009-12-17 | Susanne Gardner | Beverages composed of wine components |
US7939839B2 (en) * | 2008-09-11 | 2011-05-10 | Bridgelux, Inc. | Series connected segmented LED |
US7825427B2 (en) * | 2008-09-12 | 2010-11-02 | Bridgelux, Inc. | Method and apparatus for generating phosphor film with textured surface |
US9051177B2 (en) * | 2008-10-27 | 2015-06-09 | The United States Of America As Represented By The Secretary Of The Army | Active optical limiting semiconductor device and method with active region transparent to light becoming opaque when not biased |
TWI375338B (en) * | 2008-11-27 | 2012-10-21 | Epistar Corp | Opto-electronic device |
TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
TWI418060B (zh) * | 2008-12-26 | 2013-12-01 | Lextar Electronics Corp | 發光二極體晶片的製造方法 |
KR101134810B1 (ko) * | 2009-03-03 | 2012-04-13 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
JP5196403B2 (ja) * | 2009-03-23 | 2013-05-15 | 国立大学法人山口大学 | サファイア基板の製造方法、および半導体装置 |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
KR20110043282A (ko) * | 2009-10-21 | 2011-04-27 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
KR101039931B1 (ko) * | 2009-10-21 | 2011-06-09 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
US8783915B2 (en) | 2010-02-11 | 2014-07-22 | Bridgelux, Inc. | Surface-textured encapsulations for use with light emitting diodes |
US8338317B2 (en) | 2011-04-06 | 2012-12-25 | Infineon Technologies Ag | Method for processing a semiconductor wafer or die, and particle deposition device |
KR100999733B1 (ko) * | 2010-02-18 | 2010-12-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
TWI485884B (zh) * | 2010-03-30 | 2015-05-21 | Advanced Optoelectronic Tech | 發光二極體及其製作方法 |
US8329482B2 (en) | 2010-04-30 | 2012-12-11 | Cree, Inc. | White-emitting LED chips and method for making same |
KR20110132136A (ko) * | 2010-06-01 | 2011-12-07 | 삼성전자주식회사 | 연결 구조를 이용한 발광소자 및 그 제조 방법 |
US8193546B2 (en) * | 2010-06-04 | 2012-06-05 | Pinecone Energies, Inc. | Light-emitting-diode array with polymer between light emitting devices |
WO2012014758A1 (en) * | 2010-07-26 | 2012-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and lighting device |
US9070851B2 (en) | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
US9899329B2 (en) | 2010-11-23 | 2018-02-20 | X-Celeprint Limited | Interconnection structures and methods for transfer-printed integrated circuit elements with improved interconnection alignment tolerance |
JP5589812B2 (ja) | 2010-12-06 | 2014-09-17 | 豊田合成株式会社 | 半導体発光素子 |
US9166126B2 (en) | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
TWI467805B (zh) * | 2011-03-08 | 2015-01-01 | Opto Tech Corp | 具寬視角的發光二極體及其製造方法 |
KR101106139B1 (ko) * | 2011-04-04 | 2012-01-20 | 서울옵토디바이스주식회사 | 확장된 금속 반사층을 갖는 플립 본딩형 발광다이오드 및 그 제조방법 |
KR101115538B1 (ko) * | 2011-04-04 | 2012-02-28 | 서울옵토디바이스주식회사 | 발광소자와 그 제조방법 |
US20120261686A1 (en) * | 2011-04-12 | 2012-10-18 | Lu Chi Wei | Light-emitting element and the manufacturing method thereof |
KR101737981B1 (ko) | 2011-05-17 | 2017-05-22 | 한국전자통신연구원 | 마이크로 어레이 형태의 질화물 발광 소자 및 그 제조 방법 |
US8934259B2 (en) | 2011-06-08 | 2015-01-13 | Semprius, Inc. | Substrates with transferable chiplets |
KR101221336B1 (ko) * | 2011-07-12 | 2013-01-21 | 서울옵토디바이스주식회사 | 발광 소자 및 그것을 제조하는 방법 |
US8957440B2 (en) | 2011-10-04 | 2015-02-17 | Cree, Inc. | Light emitting devices with low packaging factor |
KR101901589B1 (ko) * | 2011-11-14 | 2018-09-27 | 엘지이노텍 주식회사 | 발광소자 |
US8794501B2 (en) | 2011-11-18 | 2014-08-05 | LuxVue Technology Corporation | Method of transferring a light emitting diode |
US8349116B1 (en) | 2011-11-18 | 2013-01-08 | LuxVue Technology Corporation | Micro device transfer head heater assembly and method of transferring a micro device |
US8573469B2 (en) | 2011-11-18 | 2013-11-05 | LuxVue Technology Corporation | Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer |
US9620478B2 (en) | 2011-11-18 | 2017-04-11 | Apple Inc. | Method of fabricating a micro device transfer head |
KR101337613B1 (ko) * | 2011-12-06 | 2013-12-06 | 서울바이오시스 주식회사 | 발광소자와 그 제조방법 |
JP2015507370A (ja) | 2012-02-02 | 2015-03-05 | ザ プロクター アンド ギャンブルカンパニー | 発光ラミネート及びその作製方法 |
WO2013117760A1 (en) * | 2012-02-10 | 2013-08-15 | University College Cork, National University Of Ireland, Cork | Light emitting diode chip |
TWI467935B (zh) * | 2012-03-06 | 2015-01-01 | Ind Tech Res Inst | 可見光通訊收發器與系統 |
GB201215632D0 (en) | 2012-09-03 | 2012-10-17 | Infiniled Ltd | Optical device |
JP5462333B1 (ja) | 2012-09-21 | 2014-04-02 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
DE102012109460B4 (de) * | 2012-10-04 | 2024-03-07 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines Leuchtdioden-Displays und Leuchtdioden-Display |
US8558254B1 (en) | 2012-11-29 | 2013-10-15 | Hong Kong Applied Science and Technology Research Institute Company Limited | High reliability high voltage vertical LED arrays |
US9166114B2 (en) * | 2012-12-11 | 2015-10-20 | LuxVue Technology Corporation | Stabilization structure including sacrificial release layer and staging cavity |
US9105714B2 (en) * | 2012-12-11 | 2015-08-11 | LuxVue Technology Corporation | Stabilization structure including sacrificial release layer and staging bollards |
US9306138B2 (en) * | 2013-04-08 | 2016-04-05 | Xiamen Sanan Optoelectronics Technology Co., Ltd. | Light emitting diode packaging structure |
CN105683872B (zh) | 2013-06-12 | 2020-05-12 | 罗茵尼公司 | 安置有光产生源的键盘背后照明 |
CN104241262B (zh) | 2013-06-14 | 2020-11-06 | 惠州科锐半导体照明有限公司 | 发光装置以及显示装置 |
DE102013107967B4 (de) * | 2013-07-25 | 2021-05-06 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip, optoelektronisches Bauelement und Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterchips |
JP2014064012A (ja) * | 2013-10-28 | 2014-04-10 | Toshiba Corp | 半導体発光素子及びその製造方法 |
JP6684541B2 (ja) * | 2014-01-20 | 2020-04-22 | ローム株式会社 | 発光素子 |
DE102014009677A1 (de) * | 2014-02-19 | 2015-08-20 | Pierre-Alain Cotte | Anzeigevorrichtung mit verbessertem Kontrast |
US9105813B1 (en) * | 2014-05-30 | 2015-08-11 | Mikro Mesa Technology Co., Ltd. | Micro-light-emitting diode |
US9231153B2 (en) * | 2014-05-30 | 2016-01-05 | Mikro Mesa Technology Co., Ltd. | Micro-light-emitting diode |
US9520537B2 (en) | 2014-06-18 | 2016-12-13 | X-Celeprint Limited | Micro assembled LED displays and lighting elements |
US9716082B2 (en) | 2014-08-26 | 2017-07-25 | X-Celeprint Limited | Micro assembled hybrid displays and lighting elements |
US9799261B2 (en) | 2014-09-25 | 2017-10-24 | X-Celeprint Limited | Self-compensating circuit for faulty display pixels |
US9799719B2 (en) | 2014-09-25 | 2017-10-24 | X-Celeprint Limited | Active-matrix touchscreen |
US9818725B2 (en) | 2015-06-01 | 2017-11-14 | X-Celeprint Limited | Inorganic-light-emitter display with integrated black matrix |
US9991163B2 (en) | 2014-09-25 | 2018-06-05 | X-Celeprint Limited | Small-aperture-ratio display with electrical component |
US10516084B2 (en) | 2014-10-31 | 2019-12-24 | eLux, Inc. | Encapsulated fluid assembly emissive elements |
US20230261153A9 (en) * | 2014-10-31 | 2023-08-17 | eLux Inc. | Encapsulated Light Emitting Diodes for Selective Fluidic Assembly |
GB201420452D0 (en) * | 2014-11-18 | 2014-12-31 | Mled Ltd | Integrated colour led micro-display |
USD826871S1 (en) | 2014-12-11 | 2018-08-28 | Cree, Inc. | Light emitting diode device |
KR102347533B1 (ko) * | 2014-12-26 | 2022-01-05 | 삼성디스플레이 주식회사 | 디스플레이 장치 및 그 제조방법 |
KR102175991B1 (ko) * | 2014-12-26 | 2020-11-09 | 삼성디스플레이 주식회사 | 디스플레이 장치 및 그 제조방법 |
TWI610459B (zh) * | 2015-05-13 | 2018-01-01 | 友達光電股份有限公司 | 微型發光二極體裝置與其製造方法 |
US9871345B2 (en) | 2015-06-09 | 2018-01-16 | X-Celeprint Limited | Crystalline color-conversion device |
CN106299095A (zh) * | 2015-06-12 | 2017-01-04 | 映瑞光电科技(上海)有限公司 | 一种高压倒装led芯片及其制作方法 |
US10133426B2 (en) | 2015-06-18 | 2018-11-20 | X-Celeprint Limited | Display with micro-LED front light |
US11061276B2 (en) | 2015-06-18 | 2021-07-13 | X Display Company Technology Limited | Laser array display |
US10255834B2 (en) | 2015-07-23 | 2019-04-09 | X-Celeprint Limited | Parallel redundant chiplet system for controlling display pixels |
US10380930B2 (en) | 2015-08-24 | 2019-08-13 | X-Celeprint Limited | Heterogeneous light emitter display system |
KR102393374B1 (ko) | 2015-08-31 | 2022-05-03 | 삼성디스플레이 주식회사 | 표시 장치 및 상기 표시 장치의 제조 방법 |
USD803472S1 (en) | 2015-09-03 | 2017-11-21 | Svv Technology Innovations, Inc. | Light emitting sheet with surface pattern |
USD777972S1 (en) | 2015-09-03 | 2017-01-31 | Svv Technology Innovations, Inc. | Light emitting sheet with surface pattern |
USD829969S1 (en) | 2015-09-03 | 2018-10-02 | Svv Technology Innovations, Inc. | Light emitting sheet with surface pattern |
USD799738S1 (en) | 2015-09-03 | 2017-10-10 | Svv Technology Innovations, Inc. | LED lighting sheet with surface pattern |
US10230048B2 (en) | 2015-09-29 | 2019-03-12 | X-Celeprint Limited | OLEDs for micro transfer printing |
TWI576007B (zh) | 2015-11-23 | 2017-03-21 | 財團法人工業技術研究院 | 發光裝置的驅動方法與發光裝置 |
US10066819B2 (en) | 2015-12-09 | 2018-09-04 | X-Celeprint Limited | Micro-light-emitting diode backlight system |
CN108474929B (zh) | 2015-12-30 | 2022-06-21 | 艾伦神火公司 | 光学窄播 |
WO2017124109A1 (en) | 2016-01-15 | 2017-07-20 | Rohinni, LLC | Apparatus and method of backlighting through a cover on the apparatus |
TWI681508B (zh) | 2016-02-25 | 2020-01-01 | 愛爾蘭商艾克斯瑟樂普林特有限公司 | 有效率地微轉印微型裝置於大尺寸基板上 |
US10193025B2 (en) | 2016-02-29 | 2019-01-29 | X-Celeprint Limited | Inorganic LED pixel structure |
US10153257B2 (en) | 2016-03-03 | 2018-12-11 | X-Celeprint Limited | Micro-printed display |
US10153256B2 (en) | 2016-03-03 | 2018-12-11 | X-Celeprint Limited | Micro-transfer printable electronic component |
CN205944139U (zh) | 2016-03-30 | 2017-02-08 | 首尔伟傲世有限公司 | 紫外线发光二极管封装件以及包含此的发光二极管模块 |
US10199546B2 (en) | 2016-04-05 | 2019-02-05 | X-Celeprint Limited | Color-filter device |
US10008483B2 (en) | 2016-04-05 | 2018-06-26 | X-Celeprint Limited | Micro-transfer printed LED and color filter structure |
NL2016716B1 (en) | 2016-05-02 | 2017-11-10 | Nts Systems Dev B V | Exposure system, printing system, method for additive manufacturing, a composition, and the use thereof. |
US9997501B2 (en) | 2016-06-01 | 2018-06-12 | X-Celeprint Limited | Micro-transfer-printed light-emitting diode device |
US11137641B2 (en) | 2016-06-10 | 2021-10-05 | X Display Company Technology Limited | LED structure with polarized light emission |
DE102016112972A1 (de) * | 2016-07-14 | 2018-01-18 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
US9980341B2 (en) | 2016-09-22 | 2018-05-22 | X-Celeprint Limited | Multi-LED components |
US10782002B2 (en) | 2016-10-28 | 2020-09-22 | X Display Company Technology Limited | LED optical components |
US10347168B2 (en) | 2016-11-10 | 2019-07-09 | X-Celeprint Limited | Spatially dithered high-resolution |
US10395966B2 (en) | 2016-11-15 | 2019-08-27 | X-Celeprint Limited | Micro-transfer-printable flip-chip structures and methods |
US10600671B2 (en) | 2016-11-15 | 2020-03-24 | X-Celeprint Limited | Micro-transfer-printable flip-chip structures and methods |
US10224231B2 (en) | 2016-11-15 | 2019-03-05 | X-Celeprint Limited | Micro-transfer-printable flip-chip structures and methods |
US10193018B2 (en) * | 2016-12-29 | 2019-01-29 | Intel Corporation | Compact low power head-mounted display with light emitting diodes that exhibit a desired beam angle |
TWI678411B (zh) | 2017-01-26 | 2019-12-01 | 南韓商Lg化學股份有限公司 | 微型led以及包含此微型led的顯示器 |
US11024608B2 (en) | 2017-03-28 | 2021-06-01 | X Display Company Technology Limited | Structures and methods for electrical connection of micro-devices and substrates |
US9853740B1 (en) | 2017-06-06 | 2017-12-26 | Surefire Llc | Adaptive communications focal plane array |
DE102017114369A1 (de) * | 2017-06-28 | 2019-01-03 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
CN109923683B (zh) * | 2017-09-15 | 2022-04-05 | 厦门市三安光电科技有限公司 | 微型发光二极管及其制作方法 |
EP3462489B1 (en) * | 2017-09-29 | 2021-05-26 | Facebook Technologies, LLC | Mesa shaped micro light emitting diode with bottom n-contact |
TWI641778B (zh) * | 2017-12-19 | 2018-11-21 | 宏碁股份有限公司 | 微型化發光裝置 |
KR102428029B1 (ko) | 2017-12-20 | 2022-08-02 | (주)포인트엔지니어링 | 마이크로 led 전사헤드 |
US11749790B2 (en) | 2017-12-20 | 2023-09-05 | Lumileds Llc | Segmented LED with embedded transistors |
US11355548B2 (en) | 2017-12-20 | 2022-06-07 | Lumileds Llc | Monolithic segmented LED array architecture |
US10957820B2 (en) | 2017-12-21 | 2021-03-23 | Lumileds Llc | Monolithic, segmented light emitting diode array |
US11296262B2 (en) * | 2017-12-21 | 2022-04-05 | Lumileds Llc | Monolithic segmented LED array architecture with reduced area phosphor emission surface |
US10418510B1 (en) | 2017-12-22 | 2019-09-17 | Facebook Technologies, Llc | Mesa shaped micro light emitting diode with electroless plated N-contact |
US10879431B2 (en) | 2017-12-22 | 2020-12-29 | Lumileds Llc | Wavelength converting layer patterning for LED arrays |
US10250948B1 (en) | 2018-01-05 | 2019-04-02 | Aron Surefire, Llc | Social media with optical narrowcasting |
US10236986B1 (en) | 2018-01-05 | 2019-03-19 | Aron Surefire, Llc | Systems and methods for tiling free space optical transmissions |
KR102536305B1 (ko) | 2018-01-05 | 2023-05-24 | (주)포인트엔지니어링 | 마이크로 led 구조체 및 이의 제조방법 |
US10473439B2 (en) | 2018-01-05 | 2019-11-12 | Aron Surefire, Llc | Gaming systems and methods using optical narrowcasting |
CN110323248B (zh) * | 2018-03-28 | 2021-09-14 | 英属开曼群岛商镎创科技股份有限公司 | 发光二极管显示面板及其制造方法 |
KR20190114330A (ko) | 2018-03-29 | 2019-10-10 | (주)포인트엔지니어링 | 마이크로 led 전사헤드 |
KR20190114333A (ko) | 2018-03-29 | 2019-10-10 | (주)포인트엔지니어링 | 마이크로 led의 검사방법 |
KR20190114334A (ko) | 2018-03-29 | 2019-10-10 | (주)포인트엔지니어링 | 마이크로 led 검사 및 리페어 방법 |
KR102424246B1 (ko) | 2018-03-30 | 2022-07-25 | (주)포인트엔지니어링 | 전사헤드를 구비한 마이크로 led 전사 시스템 |
KR102481434B1 (ko) | 2018-03-30 | 2022-12-26 | (주)포인트엔지니어링 | 전사헤드 및 이를 이용한 마이크로 led 흡착방법 |
KR20190114368A (ko) | 2018-03-30 | 2019-10-10 | (주)포인트엔지니어링 | 마이크로 led 반제품 모듈 |
KR20190114372A (ko) | 2018-03-30 | 2019-10-10 | (주)포인트엔지니어링 | 마이크로 led 전사 시스템 |
CN110349899A (zh) | 2018-04-06 | 2019-10-18 | 普因特工程有限公司 | 微发光二极管吸附体 |
KR102498037B1 (ko) | 2018-04-20 | 2023-02-10 | (주)포인트엔지니어링 | 마이크로 led 흡착체 |
KR102471585B1 (ko) | 2018-04-06 | 2022-11-28 | (주)포인트엔지니어링 | 마이크로 led 흡착체 및 이를 이용한 마이크로 led 검사시스템 |
KR20190117180A (ko) | 2018-04-06 | 2019-10-16 | (주)포인트엔지니어링 | 마이크로 led 흡착체 및 이를 이용한 마이크로 led 검사시스템 |
KR20190120598A (ko) | 2018-04-16 | 2019-10-24 | (주)포인트엔지니어링 | 마이크로 led 흡착체를 포함하는 마이크로 led 전사 시스템 |
KR102471583B1 (ko) | 2018-04-16 | 2022-11-28 | (주)포인트엔지니어링 | 마이크로 led 흡착체를 포함하는 마이크로 led 전사 시스템 |
KR102498109B1 (ko) | 2018-04-20 | 2023-02-09 | (주)포인트엔지니어링 | 마이크로 led 전사 시스템 |
KR102498112B1 (ko) | 2018-04-27 | 2023-02-09 | (주)포인트엔지니어링 | 마이크로 led 전사 헤드 |
KR20190124920A (ko) | 2018-04-27 | 2019-11-06 | (주)포인트엔지니어링 | 소자 전사 헤드 |
KR102457191B1 (ko) | 2018-05-16 | 2022-10-20 | (주)포인트엔지니어링 | 마이크로 led 전사 시스템 |
KR20190131311A (ko) | 2018-05-16 | 2019-11-26 | (주)포인트엔지니어링 | 마이크로 led 흡착체 |
KR102517784B1 (ko) | 2018-05-16 | 2023-04-04 | (주)포인트엔지니어링 | 마이크로 led 흡착체 |
KR102527138B1 (ko) | 2018-05-16 | 2023-04-28 | (주)포인트엔지니어링 | 마이크로 led 전사 시스템 |
KR20190135862A (ko) | 2018-05-29 | 2019-12-09 | (주)포인트엔지니어링 | 마이크로 led 전사 시스템 |
KR102540859B1 (ko) | 2018-05-29 | 2023-06-07 | (주)포인트엔지니어링 | 마이크로 led 전사헤드 및 이를 이용한 마이크로 led 전사 시스템 |
KR102457193B1 (ko) | 2018-05-29 | 2022-10-20 | (주)포인트엔지니어링 | 마이크로 led 흡착체 |
CN110544661A (zh) * | 2018-05-29 | 2019-12-06 | 普因特工程有限公司 | 微led转印头及利用其的微led转印系统 |
KR102540860B1 (ko) | 2018-05-29 | 2023-06-07 | (주)포인트엔지니어링 | 마이크로 led 전사헤드 및 이를 이용한 마이크로 led 전사 시스템 |
KR20190136562A (ko) | 2018-05-31 | 2019-12-10 | (주)포인트엔지니어링 | 마이크로 led 전사헤드 |
KR102527139B1 (ko) | 2018-06-15 | 2023-04-28 | (주)포인트엔지니어링 | 마이크로 led 전사헤드 및 마이크로 led 전사 스테이지 |
KR102643764B1 (ko) | 2018-06-27 | 2024-03-06 | (주)포인트엔지니어링 | 마이크로 led 전사헤드 |
KR102541195B1 (ko) | 2018-06-27 | 2023-06-09 | (주)포인트엔지니어링 | 마이크로 led 전사헤드 |
CN110648956A (zh) | 2018-06-27 | 2020-01-03 | 普因特工程有限公司 | 微发光二极管转印头 |
KR20200005235A (ko) | 2018-07-06 | 2020-01-15 | (주)포인트엔지니어링 | 마이크로 led 전사헤드 |
KR20200005234A (ko) | 2018-07-06 | 2020-01-15 | (주)포인트엔지니어링 | 마이크로 led 전사헤드 |
KR20200005237A (ko) | 2018-07-06 | 2020-01-15 | (주)포인트엔지니어링 | 마이크로 led 전사 헤드 및 이를 이용한 마이크로 led 전사 시스템 |
KR20200015071A (ko) | 2018-08-02 | 2020-02-12 | (주)포인트엔지니어링 | 마이크로 led 전사헤드 |
KR20200015076A (ko) | 2018-08-02 | 2020-02-12 | (주)포인트엔지니어링 | 마이크로 led 전사를 위한 열풍헤드 및 이를 이용한 마이크로led 전사 시스템 |
KR20200015073A (ko) | 2018-08-02 | 2020-02-12 | (주)포인트엔지니어링 | 마이크로 led 전사 시스템 |
KR20200015082A (ko) | 2018-08-02 | 2020-02-12 | (주)포인트엔지니어링 | 마이크로 led 구조체 및 이의 제조방법 |
KR20200015081A (ko) | 2018-08-02 | 2020-02-12 | (주)포인트엔지니어링 | 마이크로 led 전사헤드 |
CN115775852A (zh) | 2018-08-10 | 2023-03-10 | 林宏诚 | 流体移转系统、发光二极管装置及制作方法、发光及显示设备 |
KR20200020208A (ko) | 2018-08-16 | 2020-02-26 | (주)포인트엔지니어링 | 마이크로 led 전사 시스템 |
KR20200020207A (ko) | 2018-08-16 | 2020-02-26 | (주)포인트엔지니어링 | 마이크로 led 전사헤드 |
KR20200025079A (ko) | 2018-08-29 | 2020-03-10 | (주)포인트엔지니어링 | 전사헤드 |
US10811460B2 (en) | 2018-09-27 | 2020-10-20 | Lumileds Holding B.V. | Micrometer scale light emitting diode displays on patterned templates and substrates |
US11271033B2 (en) | 2018-09-27 | 2022-03-08 | Lumileds Llc | Micro light emitting devices |
US10923628B2 (en) | 2018-09-27 | 2021-02-16 | Lumileds Llc | Micrometer scale light emitting diode displays on patterned templates and substrates |
US10964845B2 (en) | 2018-09-27 | 2021-03-30 | Lumileds Llc | Micro light emitting devices |
KR20200053841A (ko) | 2018-11-09 | 2020-05-19 | (주)포인트엔지니어링 | 마이크로 led 위치 오차 보정 캐리어 및 마이크로 led 전사시스템 |
KR20200085507A (ko) | 2019-01-07 | 2020-07-15 | (주)포인트엔지니어링 | 마이크로 led 전사헤드 |
KR20200095909A (ko) | 2019-02-01 | 2020-08-11 | (주)포인트엔지니어링 | 마이크로 led 전사헤드 |
KR20200099019A (ko) | 2019-02-13 | 2020-08-21 | (주)포인트엔지니어링 | 마이크로 led 흡착체 |
KR20200129751A (ko) | 2019-05-10 | 2020-11-18 | (주)포인트엔지니어링 | 마이크로 led 흡착체 및 이를 이용한 마이크로 led 디스플레이 제작 방법 및 마이크로 led 디스플레이 |
KR20200135069A (ko) | 2019-05-24 | 2020-12-02 | (주)포인트엔지니어링 | 마이크로 led 디스플레이 제작 방법 및 이를 이용한 마이크로 led 디스플레이 |
KR20200137059A (ko) * | 2019-05-28 | 2020-12-09 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치 제조 방법 |
KR20190077254A (ko) * | 2019-06-13 | 2019-07-03 | 엘지전자 주식회사 | 마이크로미터 단위 크기의 반도체 발광 소자를 이용하는 발광 장치 및 그 제조 방법 |
KR20210006241A (ko) | 2019-07-08 | 2021-01-18 | (주)포인트엔지니어링 | 마이크로 led 그룹 기판 및 이의 제조 방법 및 마이크로 led 디스플레이 패널 및 이의 제조 방법 |
US11152534B2 (en) | 2019-08-07 | 2021-10-19 | Point Engineering Co., Ltd. | Transfer head and method of manufacturing micro LED display using same |
KR20210020433A (ko) | 2019-08-14 | 2021-02-24 | (주)포인트엔지니어링 | 마이크로 led 디스플레이 제작 방법 |
KR20210020421A (ko) | 2019-08-14 | 2021-02-24 | (주)포인트엔지니어링 | 마이크로 소자 디스플레이 제조 방법 |
KR20210020425A (ko) | 2019-08-14 | 2021-02-24 | (주)포인트엔지니어링 | 마이크로 led 전사헤드 |
KR20210025217A (ko) | 2019-08-27 | 2021-03-09 | (주)포인트엔지니어링 | 마이크로 led 전사헤드 및 이를 이용한 마이크로 led 디스플레이 제조 방법 |
KR20210025216A (ko) | 2019-08-27 | 2021-03-09 | (주)포인트엔지니어링 | 마이크로 led 리페어 장치 및 이를 이용한 마이크로 led 디스플레이 제조방법 |
US20220384682A1 (en) * | 2019-10-28 | 2022-12-01 | The Regents Of The University Of California | Formation of microled mesa structures with atomic layer deposition passivated sidewalls, a self-aligned dielectric via to the top electrical contact, and a plasma-damage-free top contact |
KR20210063671A (ko) | 2019-11-25 | 2021-06-02 | (주)포인트엔지니어링 | 마이크로 led 디스플레이 제작 방법 |
WO2021108909A1 (en) * | 2019-12-03 | 2021-06-10 | Vuereal Inc. | High efficient micro devices |
US11674795B2 (en) | 2019-12-18 | 2023-06-13 | Lumileds Llc | Miniature pattern projector using microLEDs and micro-optics |
US11923398B2 (en) | 2019-12-23 | 2024-03-05 | Lumileds Llc | III-nitride multi-wavelength LED arrays |
US11404473B2 (en) | 2019-12-23 | 2022-08-02 | Lumileds Llc | III-nitride multi-wavelength LED arrays |
KR102168570B1 (ko) | 2020-03-03 | 2020-10-21 | 오재열 | 마이크로 led 전사 기판 |
US11735695B2 (en) | 2020-03-11 | 2023-08-22 | Lumileds Llc | Light emitting diode devices with current spreading layer |
US11942507B2 (en) | 2020-03-11 | 2024-03-26 | Lumileds Llc | Light emitting diode devices |
US11569415B2 (en) | 2020-03-11 | 2023-01-31 | Lumileds Llc | Light emitting diode devices with defined hard mask opening |
US11848402B2 (en) | 2020-03-11 | 2023-12-19 | Lumileds Llc | Light emitting diode devices with multilayer composite film including current spreading layer |
KR20220014750A (ko) | 2020-07-29 | 2022-02-07 | (주)포인트엔지니어링 | 미소 소자 이송체 및 이를 이용한 미소 소자 정렬 방법 |
KR20220021173A (ko) | 2020-08-13 | 2022-02-22 | (주)포인트엔지니어링 | 미소 소자 이송체 및 이를 포함하는 미소 소자 전사 시스템 및 미소 소자가 실장되는 전자 제품의 제조 방법 |
US11901491B2 (en) | 2020-10-29 | 2024-02-13 | Lumileds Llc | Light emitting diode devices |
US11626538B2 (en) | 2020-10-29 | 2023-04-11 | Lumileds Llc | Light emitting diode device with tunable emission |
US11631786B2 (en) | 2020-11-12 | 2023-04-18 | Lumileds Llc | III-nitride multi-wavelength LED arrays with etch stop layer |
US11705534B2 (en) | 2020-12-01 | 2023-07-18 | Lumileds Llc | Methods of making flip chip micro light emitting diodes |
US11955583B2 (en) | 2020-12-01 | 2024-04-09 | Lumileds Llc | Flip chip micro light emitting diodes |
US11600656B2 (en) | 2020-12-14 | 2023-03-07 | Lumileds Llc | Light emitting diode device |
US11935987B2 (en) | 2021-11-03 | 2024-03-19 | Lumileds Llc | Light emitting diode arrays with a light-emitting pixel area |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5310840B2 (zh) * | 1972-05-04 | 1978-04-17 | ||
JPS50105286A (zh) * | 1974-01-24 | 1975-08-19 | ||
US3954534A (en) | 1974-10-29 | 1976-05-04 | Xerox Corporation | Method of forming light emitting diode array with dome geometry |
DE2926803A1 (de) | 1979-07-03 | 1981-02-12 | Licentia Gmbh | Elektrolumineszenz-anordnung |
FR2531814B1 (fr) * | 1982-08-10 | 1986-04-11 | Thomson Csf | Association monolithique de diodes electroluminescentes et de lentilles |
JPS62123785A (ja) | 1985-11-22 | 1987-06-05 | Fumio Inaba | 半導体発光装置 |
JP2579931B2 (ja) | 1987-03-27 | 1997-02-12 | キヤノン株式会社 | 発光表示装置 |
US4866005A (en) | 1987-10-26 | 1989-09-12 | North Carolina State University | Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide |
US5153889A (en) * | 1989-05-31 | 1992-10-06 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
US4946547A (en) | 1989-10-13 | 1990-08-07 | Cree Research, Inc. | Method of preparing silicon carbide surfaces for crystal growth |
US5200022A (en) | 1990-10-03 | 1993-04-06 | Cree Research, Inc. | Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product |
US5332910A (en) * | 1991-03-22 | 1994-07-26 | Hitachi, Ltd. | Semiconductor optical device with nanowhiskers |
US5309001A (en) | 1991-11-25 | 1994-05-03 | Sharp Kabushiki Kaisha | Light-emitting diode having a surface electrode of a tree-like form |
JP2786375B2 (ja) * | 1992-06-18 | 1998-08-13 | シャープ株式会社 | 発光ダイオード |
JP3312049B2 (ja) * | 1993-03-12 | 2002-08-05 | シャープ株式会社 | 半導体発光装置 |
JP2778405B2 (ja) * | 1993-03-12 | 1998-07-23 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体発光素子 |
JP3452982B2 (ja) * | 1994-08-24 | 2003-10-06 | ローム株式会社 | Ledプリントヘッド、およびledアレイチップ、ならびにそのledアレイチップの製造方法 |
JPH08139366A (ja) | 1994-11-11 | 1996-05-31 | Ricoh Co Ltd | 発光素子およびアレイ状光源並びにその製造方法および光信号送信装置 |
US5614734A (en) * | 1995-03-15 | 1997-03-25 | Yale University | High efficency LED structure |
DE19629920B4 (de) | 1995-08-10 | 2006-02-02 | LumiLeds Lighting, U.S., LLC, San Jose | Licht-emittierende Diode mit einem nicht-absorbierenden verteilten Braggreflektor |
DE19603444C2 (de) | 1996-01-31 | 2003-04-24 | Siemens Ag | LED-Vorrichtung mit mindestens zwei LEDs |
US5779924A (en) | 1996-03-22 | 1998-07-14 | Hewlett-Packard Company | Ordered interface texturing for a light emitting device |
US5977566A (en) * | 1996-06-05 | 1999-11-02 | Kabushiki Kaisha Toshiba | Compound semiconductor light emitter |
JPH11510968A (ja) | 1996-06-11 | 1999-09-21 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 紫外発光ダイオード及び紫外励起可視光放射蛍光体を含む可視発光ディスプレイ及び該デバイスの製造方法 |
US5708280A (en) * | 1996-06-21 | 1998-01-13 | Motorola | Integrated electro-optical package and method of fabrication |
US5955749A (en) * | 1996-12-02 | 1999-09-21 | Massachusetts Institute Of Technology | Light emitting device utilizing a periodic dielectric structure |
US5898185A (en) | 1997-01-24 | 1999-04-27 | International Business Machines Corporation | Hybrid organic-inorganic semiconductor light emitting diodes |
JP3752339B2 (ja) * | 1997-02-04 | 2006-03-08 | ローム株式会社 | 半導体発光素子 |
JP3257455B2 (ja) * | 1997-07-17 | 2002-02-18 | 松下電器産業株式会社 | 発光装置 |
JP3505374B2 (ja) * | 1997-11-14 | 2004-03-08 | 三洋電機株式会社 | 発光部品 |
US6346771B1 (en) * | 1997-11-19 | 2002-02-12 | Unisplay S.A. | High power led lamp |
EP0966766A2 (en) * | 1997-12-16 | 1999-12-29 | Koninklijke Philips Electronics N.V. | A?iii -nitride channeled led |
JP3691951B2 (ja) * | 1998-01-14 | 2005-09-07 | 東芝電子エンジニアリング株式会社 | 窒化ガリウム系化合物半導体発光素子 |
JPH11220168A (ja) * | 1998-02-02 | 1999-08-10 | Toyoda Gosei Co Ltd | 窒化ガリウム系化合物半導体素子及びその製造方法 |
US6410940B1 (en) * | 2000-06-15 | 2002-06-25 | Kansas State University Research Foundation | Micro-size LED and detector arrays for minidisplay, hyper-bright light emitting diodes, lighting, and UV detector and imaging sensor applications |
US20020017652A1 (en) * | 2000-08-08 | 2002-02-14 | Stefan Illek | Semiconductor chip for optoelectronics |
-
2000
- 2000-11-14 US US09/713,576 patent/US6410942B1/en not_active Expired - Lifetime
- 2000-11-20 WO PCT/US2000/032084 patent/WO2001041219A1/en active Application Filing
- 2000-11-20 EP EP00980675.3A patent/EP1234334B1/en not_active Expired - Lifetime
- 2000-11-20 JP JP2001542391A patent/JP5511114B2/ja not_active Expired - Lifetime
- 2000-11-20 CA CA2393007A patent/CA2393007C/en not_active Expired - Lifetime
- 2000-11-20 AU AU17905/01A patent/AU1790501A/en not_active Abandoned
- 2000-11-20 EP EP10189721.3A patent/EP2325904B1/en not_active Expired - Lifetime
- 2000-11-20 EP EP10189711.4A patent/EP2325903B1/en not_active Expired - Lifetime
- 2000-11-20 CN CNB008166013A patent/CN1229871C/zh not_active Expired - Lifetime
- 2000-11-20 KR KR1020027007122A patent/KR100731673B1/ko not_active IP Right Cessation
-
2003
- 2003-01-28 HK HK03100708.0A patent/HK1048707A1/zh unknown
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9913333B2 (en) | 2009-02-26 | 2018-03-06 | Bridgelux Inc. | Light sources utilizing segmented LEDs to compensate for manufacturing variations in the light output of individual segmented LEDs |
TWI486093B (zh) * | 2009-02-26 | 2015-05-21 | Bridgelux Inc | 利用區段式LEDs來補償個別區段式LED在光輸出上的製程差異之光源 |
US9472593B2 (en) | 2009-02-26 | 2016-10-18 | Bridgelux, Inc. | Light sources utilizing segmented LEDs to compensate for manufacturing variations in the light output of individual segmented LEDs |
US10966300B2 (en) | 2009-02-26 | 2021-03-30 | Bridgelux, Inc. | Light sources utilizing segmented LEDs to compensate for manufacturing variations in the light output of individual segmented LEDs |
US10334674B2 (en) | 2009-02-26 | 2019-06-25 | Bridgelux Inc. | Light sources utilizing segmented LEDs to compensate for manufacturing variations in the light output of individual segmented LEDs |
US9634062B2 (en) | 2009-02-26 | 2017-04-25 | Bridgelux, Inc. | Light sources utilizing segmented LEDs to compensate for manufacturing variations in the light output of individual segmented LEDs |
US8829540B2 (en) | 2010-02-19 | 2014-09-09 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device having multi-cell array, light emitting module, and illumination apparatus |
CN102169933B (zh) * | 2010-02-19 | 2014-12-03 | 三星电子株式会社 | 具有多单元阵列的半导体发光器件、发光模块和照明设备 |
CN102169933A (zh) * | 2010-02-19 | 2011-08-31 | 三星Led株式会社 | 具有多单元阵列的半导体发光器件、发光模块和照明设备 |
CN104969106A (zh) * | 2012-11-15 | 2015-10-07 | 4233999加拿大股份有限公司 | 采用微型发光二极管进行高速短距离光通信的方法和装置 |
CN104969106B (zh) * | 2012-11-15 | 2017-06-20 | 4233999加拿大股份有限公司 | 采用微型发光二极管进行高速短距离光通信的方法和装置 |
CN106206899B (zh) * | 2014-10-08 | 2019-11-01 | 美科米尚技术有限公司 | 微型发光二极管、其操作方法与制造方法 |
CN106206899A (zh) * | 2014-10-08 | 2016-12-07 | 美科米尚技术有限公司 | 微型发光二极管、其操作方法与制造方法 |
CN106486470A (zh) * | 2015-08-31 | 2017-03-08 | 三星显示有限公司 | 发光二极管结构和显示装置 |
CN107611153A (zh) * | 2016-07-12 | 2018-01-19 | 三星显示有限公司 | 显示设备和制造该显示设备的方法 |
CN107611153B (zh) * | 2016-07-12 | 2023-08-11 | 三星显示有限公司 | 显示设备和制造该显示设备的方法 |
WO2018152887A1 (zh) * | 2017-02-27 | 2018-08-30 | 深圳市华星光电技术有限公司 | 微发光二极管阵列基板及显示面板 |
US10504450B2 (en) | 2017-02-27 | 2019-12-10 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Micro light-emitting diode array substrate and display panel |
CN111149224A (zh) * | 2017-09-29 | 2020-05-12 | 脸谱科技有限责任公司 | 具有底部n触点的台面形微型发光二极管 |
Also Published As
Publication number | Publication date |
---|---|
CN1229871C (zh) | 2005-11-30 |
CA2393007A1 (en) | 2001-06-07 |
WO2001041219A1 (en) | 2001-06-07 |
EP1234334B1 (en) | 2019-11-13 |
JP2004505434A (ja) | 2004-02-19 |
EP2325903B1 (en) | 2020-01-08 |
JP5511114B2 (ja) | 2014-06-04 |
EP2325904A3 (en) | 2011-06-01 |
KR100731673B1 (ko) | 2007-06-25 |
KR20020069357A (ko) | 2002-08-30 |
US6410942B1 (en) | 2002-06-25 |
EP2325903A1 (en) | 2011-05-25 |
EP2325904B1 (en) | 2018-08-01 |
EP2325904A2 (en) | 2011-05-25 |
AU1790501A (en) | 2001-06-12 |
HK1048707A1 (zh) | 2003-04-11 |
CA2393007C (en) | 2012-05-29 |
EP1234334A1 (en) | 2002-08-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1402880A (zh) | 加强光放出的微发光二极管数组 | |
CN1292493C (zh) | 藉由内部及外部光学组件之使用而加强发光二极管中的光放出 | |
CN101604701B (zh) | 具有导热基板的发光二极管及其制造方法 | |
CN101523623B (zh) | 包括由光子晶体限定的阵列发射体的发光设备 | |
JP6053453B2 (ja) | 発光素子 | |
CN101248537B (zh) | 带有经粗化的高折射率表面层以便进行高度光提取的发光二极管 | |
JP7290849B2 (ja) | 半導体素子及びこれを含む半導体素子パッケージ | |
WO2008083562A1 (fr) | Type de diode électro-luminescente comprenant une structure à couche fenêtre d'étalement courant et d'anti-réflexion lumineuse | |
TW202339302A (zh) | 用於電流注入之led晶片的接觸結構 | |
TW201248939A (en) | Light emitting device, light emitting device package, and light unit | |
KR102407329B1 (ko) | 광원 모듈 및 이를 구비한 조명 장치 | |
CN102456795A (zh) | 发光器件 | |
CN104300062A (zh) | 发光器件 | |
CN1614795A (zh) | 半导体发光元件 | |
CN102194936B (zh) | 发光器件、发光器件封装、以及照明系统 | |
KR102302856B1 (ko) | 발광 소자 | |
CN102208509B (zh) | 发光器件、用于制造发光器件的方法以及发光器件封装 | |
US20160351751A1 (en) | Semiconductor light emitting structure and manufacturing method thereof | |
KR20130065096A (ko) | 발광 소자 | |
CN117691018A (zh) | 一种发光二极管、显示单元及显示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP02 | Change in the address of a patent holder |
Address after: North Carolina Patentee after: Cree Lighting Company Address before: california Patentee before: Cree Lighting Company |
|
CX01 | Expiry of patent term |
Granted publication date: 20051130 |
|
CX01 | Expiry of patent term |