CN1327580C - Mini single-photon light source - Google Patents
Mini single-photon light source Download PDFInfo
- Publication number
- CN1327580C CN1327580C CNB2005100252747A CN200510025274A CN1327580C CN 1327580 C CN1327580 C CN 1327580C CN B2005100252747 A CNB2005100252747 A CN B2005100252747A CN 200510025274 A CN200510025274 A CN 200510025274A CN 1327580 C CN1327580 C CN 1327580C
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- CN
- China
- Prior art keywords
- microcavity
- light source
- photon
- quantum dot
- micro cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005100252747A CN1327580C (en) | 2005-04-21 | 2005-04-21 | Mini single-photon light source |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2005100252747A CN1327580C (en) | 2005-04-21 | 2005-04-21 | Mini single-photon light source |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1702926A CN1702926A (en) | 2005-11-30 |
CN1327580C true CN1327580C (en) | 2007-07-18 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB2005100252747A Expired - Fee Related CN1327580C (en) | 2005-04-21 | 2005-04-21 | Mini single-photon light source |
Country Status (1)
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CN (1) | CN1327580C (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100464472C (en) * | 2007-04-05 | 2009-02-25 | 南京大学 | Method for producing photo quantum-point by gas-phase conformal thin-film growth |
US20110174995A1 (en) * | 2008-02-25 | 2011-07-21 | The University Of Melbourne | Single photon emission system |
CN104538842A (en) * | 2014-12-09 | 2015-04-22 | 中国科学院上海技术物理研究所 | Quantum dot embedded integrated micro-cavity monochromatic light source array |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5838870A (en) * | 1997-02-28 | 1998-11-17 | The United States Of America As Represented By The Secretary Of The Air Force | Nanometer-scale silicon-on-insulator photonic componets |
WO2002056238A2 (en) * | 2000-12-15 | 2002-07-18 | Board Of Trustees Of The Leland Stanford Junior University | Quantum-dot triggered photon and triggered photon pair |
WO2004015454A2 (en) * | 2002-07-30 | 2004-02-19 | The Board Of Trustees Of The Leland Stanford Junior University | Half-wavelength micropost microcavity with electric field maximum in the high-refractive-index material |
US6711200B1 (en) * | 1999-09-07 | 2004-03-23 | California Institute Of Technology | Tuneable photonic crystal lasers and a method of fabricating the same |
WO2004074173A1 (en) * | 2003-02-20 | 2004-09-02 | Seoul National University Industry Foundation | Method of forming quantum layer and patterned structure by multiple dip-coating process |
-
2005
- 2005-04-21 CN CNB2005100252747A patent/CN1327580C/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5838870A (en) * | 1997-02-28 | 1998-11-17 | The United States Of America As Represented By The Secretary Of The Air Force | Nanometer-scale silicon-on-insulator photonic componets |
US6711200B1 (en) * | 1999-09-07 | 2004-03-23 | California Institute Of Technology | Tuneable photonic crystal lasers and a method of fabricating the same |
WO2002056238A2 (en) * | 2000-12-15 | 2002-07-18 | Board Of Trustees Of The Leland Stanford Junior University | Quantum-dot triggered photon and triggered photon pair |
WO2004015454A2 (en) * | 2002-07-30 | 2004-02-19 | The Board Of Trustees Of The Leland Stanford Junior University | Half-wavelength micropost microcavity with electric field maximum in the high-refractive-index material |
WO2004074173A1 (en) * | 2003-02-20 | 2004-09-02 | Seoul National University Industry Foundation | Method of forming quantum layer and patterned structure by multiple dip-coating process |
Non-Patent Citations (1)
Title |
---|
InAs/InP quantum dots in SiO2/Ta2O5-based microcavities D.DALACU.ETC,APPLIED PHYSICS LETTERS,Vol.82 No.26 2003 * |
Also Published As
Publication number | Publication date |
---|---|
CN1702926A (en) | 2005-11-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Shanghai vision automatic control system Co., Ltd. Assignor: Shanghai Inst. of Technical Physics, Chinese Academy of Sciences Contract fulfillment period: 2008.12.15 to 2014.3.31 contract change Contract record no.: 2009310000002 Denomination of invention: Mini single-photon light source Granted publication date: 20070718 License type: Exclusive license Record date: 2009.1.7 |
|
LIC | Patent licence contract for exploitation submitted for record |
Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2008.12.15 TO 2014.3.31; CHANGE OF CONTRACT Name of requester: SHANGHAI SIZHENG AUTOMATIC CONTROL SYSTEM CO., LTD Effective date: 20090107 |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070718 Termination date: 20150421 |
|
EXPY | Termination of patent right or utility model |