CN1320931A - Physiochemical process for preparing controllable nm conducting lines - Google Patents

Physiochemical process for preparing controllable nm conducting lines Download PDF

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Publication number
CN1320931A
CN1320931A CN 01110206 CN01110206A CN1320931A CN 1320931 A CN1320931 A CN 1320931A CN 01110206 CN01110206 CN 01110206 CN 01110206 A CN01110206 A CN 01110206A CN 1320931 A CN1320931 A CN 1320931A
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Prior art keywords
palladium
conducting wire
silver
copper
controllable
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CN 01110206
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CN1140907C (en
Inventor
李壮
吴爱国
汪尔康
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Changchun Institute of Applied Chemistry of CAS
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Changchun Institute of Applied Chemistry of CAS
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Priority to CNB011102063A priority Critical patent/CN1140907C/en
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Publication of CN1140907C publication Critical patent/CN1140907C/en
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Abstract

A physiochemical process for preparing nm-class conducting wire whose diameter and length are controllable includes such steps as adsorbing the thiols compound on the base of scanning probe microscope, using the probe tip of scanning microscope to dip the solution of nm-class metal or alloy particles, and scratching line. Under the capillary action, said nm-class particles flow toward the base to generate chemical metal-sulfur bond, resulting in nm conducting wire.

Description

The physical chemistry preparation method of controllable nm-class conducting wire
The invention belongs to the physical chemistry preparation method of diameter and length controlled nm-class conducting wire.
The core of nanosecond science and technology is microminiaturizations of device, and nano-device or device that molecular motor, nano-transistor, nanometer light emitting diode etc. have specific function are seen in report.Each component-assembled of these nanodevices will be become the integral body with specific function, linkage unit-nm-class conducting wire is essential, thereby the preparation of nm-class conducting wire is particularly important.The preparation of nm-class conducting wire relatively lags behind with respect to the manufacturing of nano-device or device.The preparation of nm-class conducting wire at present mainly concentrates on following several method: one. the template construction from part, as the template synthesis of nano traverse method of the common report of U.S. scientific magazine Tuominen on December 15th, 2000 and Russell group; Two. the auxiliary drawing process of template assembling electric field, as the AC field pulling method of reports such as U.S.'s Applied Physics wall bulletin the 77 volume the 8th phase P.A.Smith in 2000.The vary in diameter scope of the nm-class conducting wire that the template assemble method generates is big, does not wait from several nanometers to micron order, and the time that length is also assembled, the concentration of solution and character etc. influence and comes and go.The nm-class conducting wire diameter that the auxiliary drawing process of template assembling electric field generates is thicker, and not easily separated.
The physical chemistry preparation method who the purpose of this invention is to provide a kind of controllable nm-class conducting wire.This method is with scanning probe microscopy substrate absorption mercaptan compound, dip in the solution of getting the metal or metal alloy nano particle with the scanning probe microscopy needle point then, carry out the lines delineation, because the metal or metal alloy nano particle on the capillarity needle point flows to substrate and forms gold-sulfur bond with mercaptan, form nm-class conducting wire.
Because metal or metal alloy nano particle and suprabasil mercaptan form the metal-sulfur chemical bond, guaranteed to be closely aligned mutually between the nano particle; Diameter is controlled, only depends on diameter of nano particles, and length can be delineated the length of nano particle lines as required.
The present invention is earlier with scanning probe microscopy substrate absorption mercaptan compound; The method of absorption mercaptan compound mainly contains two kinds, 1) infusion method, as Stearyl mercaptan, treat standby after the scan-probe substrate being immersed in the Stearyl mercaptan saturated solution of second cyanogen 0.5-10 minute and drying up; 2) vapour deposition process such as 16-sulfydryl hexadecanoic acid, places airtight 16-sulfydryl hexadecanoic acid gas cell with 50-80 ℃ of heating 10-30 minute the scan-probe substrate, is cooled to after the room temperature standby; Select to form with mercaptan compound the metal or metal alloy nano particle of chemical bond then, be specially gold, palladium, platinum, silver, copper, cadmium, silver-platinum, copper-palladium, nickel-copper, Yin-Jin, nickel-palladium or silver-palladium, preparation process is to dip in the sol solution that cut-off directly is the metal or metal alloy nano particle of 1.25-147 nanometer with the scanning probe microscopy needle point, carry out the lines delineation, control length as required.
Its diameter of nm-class conducting wire of the present invention's preparation only depends on the diameter of nano particle, therefore can select the length of different nano particle of diameter and delineation nm-class conducting wire as required.
Embodiment provided by the invention is as follows:
Embodiment 1:
Scan-probe substrate mica is immersed in the Stearyl mercaptan saturated solution of second cyanogen 2 minutes, takes out and treat after drying up standbyly, dip in the silver nano-particle solution of getting 35 nanometers,, form silver-colored nm-class conducting wire in the enterprising line bar delineation of standby substrate with scanning probe tip.
Embodiment 2:
The 16-sulfydryl alkanoic acid gas cell that scan-probe substrate silicon chip is placed airtight heating was cooled to after the room temperature standby in 15 minutes with 50 ℃ of heating, dip in the cadmium of getting 1.25 nanometers with scanning probe tip and receive particle solution, in the enterprising line bar delineation of standby substrate, form the cadmium nm-class conducting wire.
Embodiment 3:
The 16-sulfydryl alkanoic acid gas cell that the scan-probe substrate glasses is placed airtight heating was cooled to after the room temperature standby in 25 minutes with 65 ℃ of heating, dip in the solution of gold nanoparticles of getting 147 nanometers with scanning probe tip, in the enterprising line bar delineation of standby substrate, form the gold nano lead.
Embodiment 4:
Scan-probe substrate mica is immersed in the Stearyl mercaptan saturated solution of second cyanogen 8 minutes, takes out and treat after drying up standbyly, dip in the Pd nano particle solution of getting 6 nanometers,, form the palladium nm-class conducting wire in the enterprising line bar delineation of standby substrate with scanning probe tip.
Embodiment 5:
The 16-sulfydryl alkanoic acid gas cell that the scan-probe substrate glasses is placed airtight heating was cooled to after the room temperature standby in 22 minutes with 76 ℃ of heating, dip in the nano platinum particle solution of getting 5 nanometers with scanning probe tip, in the enterprising line bar delineation of standby substrate, form the platinum nm-class conducting wire.
Embodiment 6:
With scan-probe substrate silicon chip, be immersed in the Stearyl mercaptan saturated solution of second cyanogen 8 minutes, take out and treat after drying up standbyly, dip in the solution of gold nanoparticles of getting 98 nanometers with scanning probe tip, in the enterprising line bar delineation of standby substrate, form the gold nano lead.
Embodiment 7:
The scan-probe substrate is immersed in the Stearyl mercaptan saturated solution of second cyanogen 6 minutes, takes out and treat after drying up standbyly, dip in the copper nano-particle solution of getting 12 nanometers,, form the copper nm-class conducting wire in the enterprising line bar delineation of standby substrate with scanning probe tip.
Embodiment 8:
The 16-sulfydryl alkanoic acid gas cell that the scan-probe substrate glasses is placed airtight heating was cooled to after the room temperature standby in 12 minutes with 80 ℃ of heating, dip in silver-nano platinum particle sol solution of getting 25 nanometers with scanning probe tip, in the enterprising line bar delineation of standby substrate, form alloy silver-platinum nm-class conducting wire.
Embodiment 9:
With scan-probe substrate mica, be immersed in the Stearyl mercaptan saturated solution of second cyanogen 10 minutes, take out and treat after drying up standbyly, dip in silver-golden nanometer particle sol solution of getting 38 nanometers with scanning probe tip, in the enterprising line bar delineation of standby substrate, form alloy silver-gold nano lead.
Embodiment 10:
The 16-sulfydryl alkanoic acid gas cell that scan-probe substrate silicon chip is placed airtight heating was cooled to after the room temperature standby in 10 minutes with 55 ℃ of heating, dip in copper-Pd nano particle sol solution of getting 15 nanometers with scanning probe tip, in the enterprising line bar delineation of standby substrate, formation alloyed copper-palladium is received and is led rice noodles.
Embodiment 11:
With scan-probe substrate mica, be immersed in the Stearyl mercaptan saturated solution of second cyanogen 10 minutes, take out and treat after drying up standbyly, dip in silver-Pd nano particle sol solutions of getting 18 nanometers with scanning probe tip, in the enterprising line bar delineation of standby substrate, form alloy silver-palladium nm-class conducting wire.
Embodiment 12:
With the scan-probe substrate glasses, be immersed in the Stearyl mercaptan saturated solution of second cyanogen 0.5 minute, take out and treat after drying up standbyly, dip in nickel-Pd nano particle sol solution of getting 68 nanometers with scanning probe tip, in the enterprising line bar delineation of standby substrate, form alloy nickel-palladium nm-class conducting wire.
Embodiment 13:
The 16-sulfydryl alkanoic acid gas cell that scan-probe substrate silicon chip is placed airtight heating was cooled to after the room temperature standby in 30 minutes with 62 ℃ of heating, dip in nickel-copper nano-particle sol solution of getting 13 nanometers with scanning probe tip, in the enterprising line bar delineation of standby substrate, form alloy nickel-copper nm-class conducting wire.

Claims (5)

1. the physical chemistry preparation method of a controllable nm-class conducting wire is characterized in that earlier with scanning probe microscopy substrate absorption mercaptan compound; The method of absorption mercaptan compound mainly contains two kinds: 1) infusion method, treat standby after the scan-probe substrate being immersed in the Stearyl mercaptan saturated solution of second cyanogen 0.5-10 minute and drying up; 2) vapour deposition process, place airtight 16-sulfydryl hexadecanoic acid gas cell with 50-80 ℃ of heating 10-30 minute the scan-probe substrate, be cooled to after the room temperature standby, select to form with mercaptan compound the metal or metal alloy nano particle of chemical bond then, be specially gold, palladium, platinum, silver, copper, cadmium, silver-platinum, copper-palladium, nickel-copper, Yin-Jin, nickel-palladium or silver-palladium, dip in the sol solution that cut-off directly is the metal or metal alloy nano particle of 1.25-147 nanometer with the scanning probe microscopy needle point, carry out the lines delineation, control length as required.
2. the physical chemistry preparation method of controllable nm-class conducting wire as claimed in claim 1 is characterized in that adsorbing mercaptan compound and adopts infusion method, treats standby after the scan-probe substrate being immersed in the Stearyl mercaptan saturated solution of second cyanogen 0.5-10 minute and drying up.
3. the physical chemistry preparation method of controllable nm-class conducting wire as claimed in claim 1, it is characterized in that adsorbing mercaptan compound and adopt vapour deposition process, place airtight 16-sulfydryl hexadecanoic acid gas cell with 50-80 ℃ of heating 10-30 minute the scan-probe substrate, be cooled to after the room temperature standby.
4. the physical chemistry preparation method of controllable nm-class conducting wire as claimed in claim 1 is characterized in that the metal nanoparticle of selecting is gold, palladium, platinum, silver, copper or cadmium.
5. the physical chemistry preparation method of controllable nm-class conducting wire as claimed in claim 1 is characterized in that the metal alloy nano particle of selecting is silver-platinum, copper-palladium, nickel-copper, Yin-Jin, nickel-palladium or silver-palladium.
CNB011102063A 2001-04-02 2001-04-02 Physiochemical process for preparing controllable nm conducting lines Expired - Fee Related CN1140907C (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7501315B2 (en) 2004-06-08 2009-03-10 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US7776758B2 (en) 2004-06-08 2010-08-17 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
CN101076880B (en) * 2004-06-08 2010-09-15 奈米系统股份有限公司 Method and apparatus for forming single layer nanometer structure and apparatus comprising the said single layer
US7968273B2 (en) 2004-06-08 2011-06-28 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US8563133B2 (en) 2004-06-08 2013-10-22 Sandisk Corporation Compositions and methods for modulation of nanostructure energy levels

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7501315B2 (en) 2004-06-08 2009-03-10 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US7776758B2 (en) 2004-06-08 2010-08-17 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
CN101076880B (en) * 2004-06-08 2010-09-15 奈米系统股份有限公司 Method and apparatus for forming single layer nanometer structure and apparatus comprising the said single layer
US7968273B2 (en) 2004-06-08 2011-06-28 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US8143703B2 (en) 2004-06-08 2012-03-27 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US8507390B2 (en) 2004-06-08 2013-08-13 Sandisk Corporation Methods and devices for forming nanostructure monolayers and devices including such monolayers
US8558304B2 (en) 2004-06-08 2013-10-15 Sandisk Corporation Methods and devices for forming nanostructure monolayers and devices including such monolayers
US8563133B2 (en) 2004-06-08 2013-10-22 Sandisk Corporation Compositions and methods for modulation of nanostructure energy levels
US9149836B2 (en) 2004-06-08 2015-10-06 Sandisk Corporation Compositions and methods for modulation of nanostructure energy levels

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