CN1299332C - 流体压力刻印光刻技术 - Google Patents

流体压力刻印光刻技术 Download PDF

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CN1299332C
CN1299332C CNB018129447A CN01812944A CN1299332C CN 1299332 C CN1299332 C CN 1299332C CN B018129447 A CNB018129447 A CN B018129447A CN 01812944 A CN01812944 A CN 01812944A CN 1299332 C CN1299332 C CN 1299332C
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CN1457505A (zh
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斯蒂芬·Y·周
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Nanonex Corp
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    • B29C2043/3205—Particular pressure exerting means for making definite articles
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    • B29C43/56—Compression moulding under special conditions, e.g. vacuum
    • B29C2043/566—Compression moulding under special conditions, e.g. vacuum in a specific gas atmosphere, with or without pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
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    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/945—Special, e.g. metal

Abstract

一种改善的刻印光刻方法包括使用直接流体压力把模型压入一衬底支撑的薄膜(A)中。最好是模型和/或衬底足够地有弹性以在流体压力(C)下提供广的区域接触。流体加压可以通过使模型相对于薄膜密封并在加压腔中放置最终的组件而实现。它也可以通过使模型经受加压流体的喷射而实现。该流体加压的结果是扩大区域上增强的分辨率和高均匀性。

Description

流体压力刻印光刻技术
技术领域
本发明涉及刻印光刻技术，尤其是，涉及其中使用直接流体压力(direct fluid pressure)把一模型压入一薄膜的刻印光刻技术。该方法对于在一增加区域上提供增加的分辨率和均匀性的毫微刻印光刻技术是尤其有用的。
背景技术
光刻技术在半导体集成电路和许多光、磁和微机械器件的制造中是关键工序。光刻技术在衬底支撑的一薄膜上造成一图形，以便在接下来的工序中该图形能够被复制到衬底中或加在衬底上的其它材料中。通常的光刻技术代表性地包括把一保护层薄膜应用到衬底上，使该保护层暴露于想得到的辐照图形，并显影暴露的薄膜以产生实际图形。在该方法中，分辨率被射线的波长限制，并且随着特征(feature)尺寸变小设备变得越来越昂贵。基于从根本上不同原理上的毫微刻印光刻技术提供了高分辨率，高生产量，低成本和大范围覆盖的潜力。在毫微刻印光刻技术中，具有纳米尺度特征的模型被压入一薄膜，根据模型的该特征使薄膜形状变形并在薄膜中形成一凹凸图形。在模型移走之后，薄膜可以被加工以消除减小了厚度的区域。该消除使下面的衬底暴露以便进一步的加工。毫微刻印光刻技术的细节在1998年6月30日授权的本申请人的美国专利号5,772,905中有描述并标题为“毫微刻印光刻技术”。该905专利在这里引入作为参考。
把模型压入薄膜的通常方法包括在一高精度机械压力的相应刚性板上定位模型和衬底。通过这些设备，该工艺能在12in2级别的区域上产生高度均匀性的低于25nm的特征。更大区域的均匀性对提高生产量和对许多应用例如显示器是非常有利的。
发明内容
刻印光刻术的一种改善的方法包括使用直接流体压力把一模型压入衬底支撑的一薄膜。最好该模型和/或衬底是足够有弹性的以便在液压下获得广区域的接触。流体加压可以通过把模型相对于薄膜密封并在加压腔中排列由此引起的组件而实现。它也可以通过使模型经受加压流体的喷射而实现。流体加压的结果是在扩大的区域上增加的分辨率和高均匀性。
具体地说，本发明提供一种处理衬底表面的方法，包括步骤：在衬底的表面提供一可塑层；提供压模表面具有多个突出特征的一模型；用直接流体压力把压模表面和可塑层压在一起以减小突出特征下面的可塑层的厚度从而产生减小厚度的区域；以及从可塑层撤走模型。
根据本发明的上述方法，进一步包括步骤：从减小厚度的区域除去可塑层的材料以选择性地暴露衬底的区域；和在暴露区域进一步选择性地处理衬底。
根据本发明的上述方法，其中进一步处理包括用杂质掺杂衬底，从衬底除去材料，或在衬底上增加材料。
根据本发明的上述方法，进一步包括在加压之后硬化可塑层的步骤。
根据本发明的上述方法，其中加压包括密封模型和可塑层之间的区域，并使模型和衬底经受加压流体。
根据本发明的上述方法，其中密封包括使模型和衬底之间的区域相对于加压流体密封。
根据本发明的上述方法，其中衬底或模型或两者都足够地有挠性以在流体压力下密合在一起。
根据本发明的上述方法，其中加压包括倾注加压流体把模型和可塑层压在一起。
根据本发明的上述方法，其中压模表面的至少两个突出特征横向隔离开少于200nm。
根据本发明的上述方法，其中衬底和模型由同一种材料制成以使不同的热膨胀或收缩最小化。
根据本发明的上述方法，其中可塑层包括一预先形成的图形，并且在把压模表面与可塑层压在一起之前使模型与该预先形成的图形对准。
本发明还提供一种用于处理一衬底的设备，包括：放置于衬底一表面上的一可塑层；压模表面包括多个邻近着可塑层布置的突出特征的一模型；以及包含加压流体的一压力容器，用于提供加压流体以遍通过直接流体压力把压模表面和可塑层压在一起。
根据本发明的上述设备，进一步包括一个密封，以把可塑层和压模表面之间的区域相对于加压流体密封。
根据本发明的上述设备，其中密封包括从外围垫圈，o-环，流体可渗透柔性膜和外围夹具中选择的一装置。
根据本发明的上述设备，其中衬底和模型放置在压力容器之中。
根据本发明的上述设备，其中压力容器进一步包括用于加热可塑层的一加热器。
根据本发明的上述设备，其中压力容器进一步包括一透明窗口，用于允许用辐射照射可塑层。
根据本发明的上述设备，其中模型或衬底对辐射是透明的。
根据本发明的上述设备，其中压力容器包括多个开口，用于提供加压流体以把模型和可塑层压在一起。
根据本发明的上述设备，其中压模表面的至少两个突出特征横向隔开少于200nm。
本发明还提供一种压力模制系统，包括：一压力腔；一模型，其具有一个表面，该表面具有至少两个高度的特征；以及一衬底，包括位置邻近于模型的表面的一可塑层，模型或衬底的一部分暴露于腔的直接流体压力以把模型和可塑层压在一起。
根据本发明的上述系统，其中压力腔包括一开口，并且模型或衬底暴露于来自开口的加压流体。
根据本发明的上述系统，其中模型上的特征配置为以便刻印特征尺寸小于200nm的图形。
根据本发明的上述系统，进一步包括适当定位的一密封装置，以把模型和衬底之间的一区域和腔中的压力隔离。
根据本发明的上述系统，其中密封装置包括位于模型和衬底之间的一材料环。
根据本发明的上述系统，其中环是一o-环。
根据本发明的上述系统，其中密封装置包括一柔韧膜。
根据本发明的上述系统，其中密封装置包括一夹具以从周边把模型夹到衬底上。
根据本发明的上述系统，其中密封装置包括至少一个圆柱体，用于将衬底或柔韧膜相对于模型密封。
根据本发明的上述系统，其中压力腔包括多个开口，用于把加压流体导向模型或衬底。
根据本发明的上述系统，其中流体被导向与衬底不相邻的模型的一表面。
本发明还提供一种用于图形化半导体衬底上一掩模层的方法，包括：对半导体衬底提供掩模层；放置一模型，它具有相邻于掩模层的一图形化表面；用加压流体填充腔；以及使模型或衬底经受来自腔的加压流体以把模型和掩模层压在一起。
根据本发明的上述方法，其中掩模层的材料包括一聚合物，并进一步包括在完成加压后固化聚合物的步骤。
根据本发明的上述方法，其中固化包括用辐射照射层。
根据本发明的上述方法，其中固化的掩模层从模型保存一刻印图形。
根据本发明的上述方法，进一步包括冷却掩模层到掩模层材料硬化的一温度。
根据本发明的上述方法，其中掩模层的材料包括抗蚀剂。
根据本发明的上述方法，其中掩模层的材料包括一种液态聚合物。
根据本发明的上述方法，进一步包括在加压之前把掩模层加热到掩模层材料变得可挠曲的温度。
根据本发明的上述方法，其中加压包括对模型的一表面应用流体压力以把模型的图形化表面推向衬底。
根据本发明的上述方法，加压包括对衬底的一表面应用流体压力以把衬底推向模型的图形化表面。
根据本发明的上述方法，进一步包括：从掩模层移走模型并在掩模层中留下模制凹口；以及从模制凹口中清除掩模材料以暴露衬底的区域。
根据本发明的上述方法，进一步包括下面步骤中的一步或多步：
选择性蚀刻暴露的衬底，向暴露的衬底中选择性扩散杂质，和在暴露的衬底上选择性淀积材料。
根据本发明的上述方法，进一步包括定位一密封材料以把模型和掩模层之间的区域与腔中的流体压力隔离。
根据本发明的上述方法，其中定位包括围绕在模型和掩模层之间的区域放置一材料环。
根据本发明的上述方法，其中定位包括在压力腔与模型和衬底中的至少一个之间放置至少一个柔韧膜。
本发明还提供一种处理半导体衬底的方法，包括步骤：在衬底上放置一层掩模材料；相邻掩模材料层放置具有一图形化表面的一模型；放置一密封装置以把掩模材料层与压力腔隔离；在压力腔中放置掩模衬底和模型；以及增加压力腔中加压流体的压力以通过直接流体压力把模型的图形化表面和掩模材料层压在一起。
根据本发明的上述方法，其中密封装置的定位密封地把掩模材料层和模型之间的一区域与压力腔中的加压流体相隔离。
根据本发明的上述方法，进一步包括在增加压力之前加热掩模层。
根据本发明的上述方法，进一步包括在加压之后固化掩模层使由模型导致的变形硬化。
根据本发明的上述方法，进一步包括在固化之后从与掩模层的接触中移走模型。
根据本发明的上述方法，进一步包括在移走模型之后从掩模层清除污染物的步骤。
根据本发明的上述方法，进一步包括从变形当中清除掩模材料。
根据本发明的上述方法，包括用下面步骤中的一个或多个进一步处理衬底：选择性蚀刻衬底，在衬底中选择性掺杂杂质，并在衬底上选择性增加材料。
根据本发明的上述方法，其中增加压力包括对腔中的流体施加压力。
根据本发明的上述方法，其中流体包括气体。
根据本发明的上述方法，其中流体是液体。
附图说明
考虑到将连同附图详细描述的说明性实施方式时，本发明的优势，特性和各种附加的特点将显得更加完全。在附图中：
图1是一种改善的刻印光刻技术中的步骤的示意流程图；
图2示出了使用于图1的改进方法中的一典型模型和支撑一可塑薄膜的一衬底；
图3示出了用来实行图1的改进方法的设备；
图4A，4B和4C显示了图1的工艺的不同阶段的可塑层和衬底；
图5A，5B和5C示出了可以在衬底上执行的各种更多的工序。
图6A-6E示出了在图1的方法中有用的另一密封方案；以及
图7显示了用于实行图1的方法的另一种设备。
必须明白这些图目的是用于说明本发明的原理而不成比例。
具体实施方式
使用高精度机械压力把模型压入薄膜给在大区域上复制小图形带来公差问题。压力通过孔径转移到导轴上，并且轴和它们各自的孔径之间的间隔与将要复制的特征相比可能是大的。这样的间隔允许衬底和模型之间不希望的相对平移和旋转偏移。此外，就是最仔细的结构，在光刻技术中使用的模型和衬底也不是完全平坦的。当这些模型和衬底布置在压力的刚性板上时，大区域上平坦度的偏差可以导致模制压力和刻印深度上的差异。因此，需要提供可以消除机械压力限制的一种刻印光刻技术。
根据本发明，通过使用直接流体压力把模型和可塑表面压在一起改善了机械压力横向移动的问题。本发明的方法在模型的一表面上应用流体压力，衬底支撑可塑表面或两者。因为流体压力是等压的，没有施加显著的非平衡横向力。直接流体压力也包括通过一柔韧膜传输到模型或衬底的流体压力，同时它不与从流体传输的等静压干涉。并且来自一压力容器中的许多开口倾注的加压流体也能够在模型或衬底上施加近等压直接流体压力。
本发明预期将在预先图形化了的衬底上的图形模制上有重要应用。使用通常的对准技术模型可以与先前的图形对准，并且通过直接流体压力使任何相对横向移动最小化而刻印，同时导致两图形对准上的改善。
参照附图，图1是使用直接流体压力的刻印光刻技术的改善步骤的示意流程图。在块A中显示的初始步骤，是准备具有多个突出特征的一模型和衬底支撑的一可塑材料薄膜。突出特征最好是微米尺度特征并且，更加有利的是，纳米尺度特征。在模型表面至少具有两个被至少一个小于200nm的横向尺寸隔离的突出特征的情况下，该方法是高度有利的。可塑材料是这样一种材料，它保留或可以硬化以保留来自一模型表面的突出特征的刻印。
图2示出了用于图1的步骤中具有突出特征的一典型模型10和支撑一可塑薄膜21的一衬底20。模型包括一主体11和包括多个具有需要形状的突出特征13的一压模层12。模型主体11和压模层12典型地是熔凝石英，玻璃或陶瓷。可以使用工艺中众所周知的电子束光刻和蚀刻技术把压模层12图形化为纳米尺度的特征13。层21的厚度典型地是在0.01nm-10μm的范围，并且突出特征13的尺寸典型地是在0.1nm-10μm的范围。
衬底典型地包括一半导体晶片例如一基本平坦的单晶硅晶片。衬底也可以是塑料，玻璃或陶瓷。可塑薄膜21可以是任何能被压力变得柔软并且能够保留一压力刻印变形或图形的聚合物。它可以是响应热临时软化的一热塑性聚合物，例如聚碳酸酯或聚甲基丙烯酸甲酯(PMMA)。或者它可以是响应辐射而硬化的液体，例如一种UV-可固化硅树脂，或随着热固化的一种液体。它也可以是聚合物和可硬化液体的一种复合层。薄膜典型地通过喷射或旋涂施加于衬底。最好是该聚合物膜不粘附于模型表面。如果必要，模型表面可以涂覆一种脱模剂以阻止这样的粘合。
在高分辨率的应用中，为了使由不同的热膨胀或收缩引起的未对准最小，最好是模型和衬底由同样的材料制成。
更好的是模型主体11，衬底20(或两者)是柔性的以便在液压的压力之下，尽管平坦度的偏差，模型和衬底将密合。厚度少于2mm的硅衬底对典型的刻印压力显示这样的柔性。
下一步，显示在块B中，是把模型和薄膜放在一起并把模型和薄膜的界面密封，形成一模型/薄膜组件。如果薄膜已经包括一预先形成的图形，那么根据工艺中众所周知的技术把模型的该图形与薄膜上预先的图形精细地对准排成。密封的目的是允许外部液压把模型压入薄膜中。密封可以通过多种方法，譬如通过在将被模制的区域外围准备一材料环例如一弹性垫圈并且四周夹住该组件而实现。
第三步(块C)是用直接流体压力把模型压入薄膜中。这样做的一种方法是在压力容器中放置该组件并向容器中引进加压流体。流体压力的优点是它是等压的。导致的力均匀地把模型压入薄膜中。剪切或旋转成分最小。此外由于模型和/或衬底是挠性的而不是刚性的，不考虑平坦度的不可避免的偏差，获得了模型和薄膜之间的密合。结果是在薄膜的一增加的区域上模制分辨率、对准和均匀性水平的增强。
加压流体可以是气体或液体。加压空气是方便的并且典型的压力处于1-1000psi的范围。如果需要，流体可以加热以帮助加热可塑薄膜。冷却流体可以用来冷却薄膜。
图3示出了分布在一压力容器31中的一密封模型/薄膜组件30。该组件30被一外围的弹性垫圈32密封，围绕将模制的区域四周延伸。该部件的外围可以被一夹具(没有显示)轻轻地夹住以实现密封。容器31最好包括一阀门控制的入口34用来引进加压流体和一阀门控制的出口35用于这种流体的排出。容器31可以任选地包括一加热器36用于加热一热塑性或热可固化薄膜和/或一透明窗口37用于引进辐射以固化或交联该薄膜。一可密封门38可以提供通向容器内部的入口。
下一步显示在块D中，是硬化该可塑薄膜，如果必要的话，以便它保留模型的刻印并移走该模型。用于硬化的步骤依赖于薄膜的材料。有些材料将保持刻印而不硬化。热塑性材料可以通过在模制之前预先加热它们并在刻印之后允许它们冷却而被硬化。例如，PMMA可以通过在模制之前加热到200℃而适当地软化，并且在刻印之后冷却而硬化。热可固化材料可以通过在刻印过程中应用热而被硬化。以上描述的加热器36和/或加热的加压流体的使用可以实现这些硬化。辐射可固化材料可以通过在刻印过程中应用UV辐射而被硬化。这些辐射可以通过加压容器的窗口37提供。该模型可以由透明材料制成以允许辐射到达薄膜。或者，该衬底可以是透明的并且窗口适当定位以便通过衬底照射薄膜。
显示在块E中的第五步在某些应用中是任选的。它是从模制薄膜的凹进中清除污染物(如果有的话)和过量的材料。模制薄膜将具有凸起的特征和凹进。在许多光刻操作中需要从凹进中消除材料以便下面的衬底被暴露用于更多的工序。这可以使用反应离子蚀刻方便地完成。
图4A，4B和4C显示了在工艺不同阶段的可塑层和衬底。图4A示出了通过被箭头40的方向的流体压力冲压的模型刻印过程中的层21。模型的突出特征13压入层21中，产生薄的区域41。模型连续的突出特征之间的凹进区域42使层21具有更大厚度的区域43。
图4B显示了硬化和模型移去之后的层21。层21根据被模型刻印的图形保留薄区域41和厚区域43。
图4C示出了在清除凹口中过量层材料，暴露衬底20的纳米尺度区域44之后的层和衬底。
在重要的应用中，由此引起的结构是一抗蚀剂覆盖的半导体衬底，同时一凹口图形沿着衬底延伸，如图4C所示。这样的结构可以通过工艺中众所周知的多种方法进一步被处理。例如，模制的膜可以作为掩模用于衬底暴露区域中表面层的清除，用于掺杂暴露区域或用于在暴露的区域上生长或淀积材料。
图5A，5B和5C示出了这样进一步的工序。在图5A中，衬底可以包括一表面电介质层50(例如Si上的SiO2)并且掩模层可以允许暴露区域上电介质的清除。在图5B中，在那些暴露的区域中杂质区域51可以选择性地扩散或注入半导体中，改变了掺杂区域的局部的电和光性质。或者，如图5C中所示，新材料层52例如导体或外延层可以淀积或生长在凹口中暴露的衬底上。在处理之后，如果必要的话，可以使用通常的技术清除模制层的保留材料。例如，PMMA可以通过用丙酮清洗而被清除。一衬底可以经受附加的光刻步骤以完成一复杂的器件例如一集成电路。
如上提到的，有许多密封模型/薄膜部件30的方法以便加压流体把模型压入薄膜中。图6A-6D示出了这些方法中的几种。
图6A示意性地示出了通过在柔软的，流体可以渗透的膜40(例如，一塑料包)的密封覆盖物中放置组件而密封模型/薄膜组件的一种方案。在该方案中模型和可塑层之间的区域相对于外部压力容器是密封的。最好是在模制之前就从包中清除空气。
图6B显示了另一密封方案，其中组件30被可以是空心弹性螺环形状的一外围密封夹具61密封。可以通过使模型具有围绕将被模制的区域延伸的一突出区域62而帮助密封。使用中，夹具和加压流体将把突出区域62压入可塑薄膜中，密封模制区域。
图6C示出了一密封方案，其中通过应用一外围管筒或砝码63轻轻地把模型压在可塑薄膜上而密封组件30。外围突出区域62可以帮助密封。
图6D显示了另一密封方案，其中组件30被模型和衬底之间的一密封o-环64密封。最好是o-环分别位于模型和衬底中的外围凹口65，66中。来自一外围管筒或砝码63的轻微压力可以帮助密封。
图6E显示了另一密封方案，其中组件30分布在柔韧膜40A和40B之间并且密封在一对相配的圆柱67A，67B之中。对圆柱内部使用流体压力将把模型和可塑表面压在一起。
可以作为选择的是，在加压之前，两圆柱可以分别相对于模型和衬底轻轻地密封。在该可供选择的方案中，进一步，衬底可以依靠在一支架上并且单个圆柱相对于模型或一层膜轻轻地密封。
图7显示了可供选择的另一模制设备70，其中组件邻近着一空心压力帽72中的开口71放置，并且模型10被通过开口71流出的加压流体的喷射压入可塑层21中。帽72(类似于容器31)具有用于加压流体的一内部腔73。模型和可塑膜之间的区域被模型的上表面有效地从压力容器密封。
在操作中，衬底和模型位于一衬底支架79上。帽72可以被例如棒74，75支持在模型10上的固定好的位置。高压流体，最好是气体，从一入口76泵入腔73中。腔中的高压流体从每个开口71产生一流体喷射流。这些喷射流相对可塑层均匀地冲压模型10以刻印模型特征。
有利的是，帽72可以包括沿着邻近模型10表面的外周的一凹槽77。凹槽77可以支承位于帽72和模型20之间的o-环78。该o-环降低了帽72和模型10之间的流体流出，增加了模制压力并使它更加均匀。
可以作为选择的是，衬底支架79可以具有和帽72相同的结构以便衬底也被加压流体的喷射流冲压。
例子
通过考虑下面的具体例子，现在可以更好地理解本发明。
例1
直径为4″的一硅晶片被一层150nm厚的PMMA覆盖。一模型由直径为4″的一硅晶片制成并在它的表面的一个面上具有多个100nm厚的二氧化硅突出图形。模型位于PMMA层上，突出图形面对PMMA。模型和衬底密封在腔中的塑料包中，并且腔被抽空。然后向腔中引入500psi的氮气。腔中的一加热器把PMMA加热到170℃，它高于PMMA的玻璃转变温度，软化PMMA。在气体压力下，模型被压入PMMA中。在关掉加热器并引入冷的氮气之后，PMMA温度降到它的玻璃转变温度之下，并且PMMA硬化。然后氮气排放到大气压中。从腔中移走模型和衬底组件。包被切割，并且模型与衬底分离。
例2
直径为4″的一硅晶片被一层150nm厚的PMMA覆盖并放置在一卡盘上。卡盘表面上具有多个小孔。孔可以和真空或者加压气体相连。当孔与真空相连时，卡盘把晶片支持在卡盘表面上。由直径为4″的一硅晶片制成的一模型在它的表面的一个面上具有多个二氧化硅突出图形(100nm厚)。模型被具有和衬底卡盘相同设计的第二个卡盘支持。模型放于PMMA层顶上，突出图形面对PMMA。模型和衬底被放于一个腔中。PMMA可以从卡盘被加热。
在刻印过程中，PMMA首先被加热到高于它的玻璃转变温度。模型上的一环形图形把环内的模型图形从外部压力中封锁起来。然后两个卡盘的孔从真空改变到500psi的气压。加压气体把模型突出图形压入PMMA中。重要的是，尽管模型和衬底的背面的粗糙以及卡盘表面的粗糙，加压气体在亚微米尺度上均匀地把模型突出图形压入PMMA中。
必须明白以上描述的实施方式仅仅说明了许多可以代表本发明的应用的实施方式中的少数。不离开本发明的精神和范围，本领域技术人员可以获得大量的不同的其它方案。

Claims (57)

1.一种处理衬底表面的方法，包括步骤：
在衬底的表面提供一可塑层；
提供压模表面具有多个突出特征的一模型；
用直接流体压力把压模表面和可塑层压在一起以减小突出特征下面的可塑层的厚度从而产生减小厚度的区域；以及
从可塑层撤走模型。
2.权利要求1的方法，进一步包括步骤：从减小厚度的区域除去可塑层的材料以选择性地暴露衬底的区域；和在暴露区域进一步选择性地处理衬底。
3.权利要求2的方法，其中进一步处理包括用杂质掺杂衬底，从衬底除去材料，或在衬底上增加材料。
4.权利要求1的方法，进一步包括在加压之后硬化可塑层的步骤。
5.权利要求1的方法，其中加压包括密封模型和可塑层之间的区域，并使模型和衬底经受加压流体。
6.权利要求5的方法，其中密封包括使模型和衬底之间的区域相对于加压流体密封。
7.权利要求1的方法，其中衬底或模型或两者都足够地有挠性以在流体压力下密合在一起。
8.权利要求1的方法，其中加压包括倾注加压流体把模型和可塑层压在一起。
9.权利要求1中的方法，其中压模表面的至少两个突出特征横向隔离开少于200nm。
10.权利要求1的方法，其中：
该衬底包括一半导体衬底；
该可塑层包括可塑掩模层；以及
通过使该模型或衬底暴露于来自一个加压流体腔的加压流体而使该模型压向掩模层。
11.权利要求10的方法，其中掩模层的材料包括一聚合物，并进一步包括在完成加压后固化聚合物的步骤。
12.权利要求11的方法，其中固化包括用辐射照射层。
13.权利要求11的方法，其中固化的掩模层从模型保存一刻印图形。
14.权利要求10的方法，进一步包括冷却掩模层到掩模层材料硬化的一温度。
15.权利要求10的方法，其中掩模层的材料包括抗蚀剂。
16.权利要求15的方法，其中掩模层的材料包括一种液态聚合物。
17.权利要求10的方法，进一步包括在加压之前把掩模层加热到掩模层材料变得可挠曲的温度。
18.权利要求10的方法，其中加压包括对模型的一表面应用流体压力以把模型的图形化表面推向衬底。
19.权利要求10的方法，加压包括对衬底的一表面应用流体压力以把衬底推向模型的图形化表面。
20.权利要求10的方法，进一步包括：
从掩模层移走模型并在掩模层中留下模制凹口；以及
从模制凹口中清除掩模材料以暴露衬底的区域。
21.权利要求20的方法，进一步包括下面步骤中的一步或多步：
选择性蚀刻暴露的衬底，向暴露的衬底中选择性扩散杂质，和在暴露的衬底上选择性淀积材料。
22.权利要求10的方法，进一步包括定位一密封材料以把模型和掩模层之间的区域与腔中的流体压力隔离。
23.权利要求22的方法，其中定位包括围绕在模型和掩模层之间的区域放置一材料环。
24.权利要求22的方法，其中定位包括在加压流体腔与模型和衬底中的至少一个之间放置至少一个柔韧膜。
25.权利要求1的方法，其中：
该衬底包括一半导体衬底；
该可塑层包括可塑掩模层；以及
通过提供一个加压流体腔，放置一密封装置以把掩模层和该加压流体腔隔离，从而将模型压向掩模层，
在该加压流体腔中放置掩模掩蔽的衬底和模型，并增加该加压流体腔中加压流体的压力。
26.权利要求25的方法，其中密封装置密封地把掩模材料层和模型之间的一区域与加压流体腔中的加压流体相隔离。
27.权利要求25的方法，进一步包括在增加压力之前加热掩模层。
28.权利要求25的方法，进一步包括在加压之后固化掩模层使由模型导致的变形硬化。
29.权利要求28的方法，进一步包括在固化之后从与掩模层的接触中移走模型。
30.权利要求29的方法，进一步包括在移走模型之后从掩模层清除污染物的步骤。
31.权利要求28的方法，进一步包括从变形当中清除掩模材料。
32.权利要求31的方法，包括用下面步骤中的一个或多个进一步处理衬底：选择性蚀刻衬底，在衬底中选择性掺杂杂质，并在衬底上选择性增加材料。
33.权利要求25的方法，其中增加压力包括对加压流体腔中的流体施加压力。
34.权利要求25的方法，其中流体包括气体。
35.权利要求25的方法，其中流体是液体。
36.权利要求1的方法，其中衬底和模型由同一种材料制成以使不同的热膨胀或收缩最小化。
37.权利要求1的方法，其中可塑层包括一预先形成的图形，并且在把压模表面与可塑层压在一起之前使模型与该预先形成的图形对准。
38.用于处理一衬底的设备，包括：
放置于衬底一表面上的一可塑层；
压模表面包括多个邻近着可塑层布置的突出特征的一模型；以及
包含加压流体的一压力腔，用于提供加压流体以便通过直接流体压力把压模表面和可塑层压在一起。
39.权利要求38的设备，进一步包括一个密封，以把可塑层和压模表面之间的区域相对于加压流体密封。
40.权利要求39的设备，其中密封包括从外围垫圈，o-环，流体可渗透柔性膜和外围夹具中选择的一装置。
41.权利要求38的设备，其中衬底和模型放置在压力腔之中。
42.权利要求41的设备，其中压力腔进一步包括用于加热可塑层的一加热器。
43.权利要求41的设备，其中压力腔进一步包括一透明窗口，用于允许用辐射照射可塑层。
44.权利要求43的设备，其中模型或衬底对辐射是透明的。
45.权利要求38的设备，其中压力腔包括多个开口，用于提供加压流体以把模型和可塑层压在一起。
46.权利要求38的设备，其中压模表面的至少两个突出特征横向隔开少于200nm。
47.权利要求38的设备，其中该模型具有一个表面，该表面具有多个特征，所述多个特征具有至少两种不同的高度。
48.权利要求47的设备，其中压力腔包括一开口，并且模型或衬底暴露于来自开口的加压流体。
49.权利要求47的设备，其中模型上的特征配置为以便刻印特征尺寸小于200nm的图形。
50.权利要求47的设备，进一步包括适当定位的一密封装置，以把模型和衬底之间的一区域和压力腔中的压力隔离。
51.权利要求50的设备，其中密封装置包括位于模型和衬底之间的一材料环。
52.权利要求51的设备，其中环是一o-环。
53.权利要求50的设备，其中密封装置包括一柔韧膜。
54.权利要求50的设备，其中密封装置包括一夹具以从周边把模型夹到衬底上。
55.权利要求50的设备，其中密封装置包括至少一个圆柱体，用于对模型、衬底或柔韧膜密封。
56.权利要求50的设备，其中压力腔包括多个开口，用于把加压流体导向模型或衬底。
57.权利要求56的设备，其中流体被导向与衬底不相邻的模型的一表面。
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