CN1270696A - 存储单元装置及其作为磁性ram与联合存储器的应用 - Google Patents
存储单元装置及其作为磁性ram与联合存储器的应用 Download PDFInfo
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- CN1270696A CN1270696A CN98809230A CN98809230A CN1270696A CN 1270696 A CN1270696 A CN 1270696A CN 98809230 A CN98809230 A CN 98809230A CN 98809230 A CN98809230 A CN 98809230A CN 1270696 A CN1270696 A CN 1270696A
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- 230000005291 magnetic effect Effects 0.000 title claims description 25
- 230000005294 ferromagnetic effect Effects 0.000 claims description 39
- 230000005415 magnetization Effects 0.000 claims description 11
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- BFRGSJVXBIWTCF-UHFFFAOYSA-N niobium monoxide Inorganic materials [Nb]=O BFRGSJVXBIWTCF-UHFFFAOYSA-N 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 13
- 238000000034 method Methods 0.000 description 7
- 238000003860 storage Methods 0.000 description 5
- 230000000295 complement effect Effects 0.000 description 3
- 230000005417 remagnetization Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910015136 FeMn Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 210000000664 rectum Anatomy 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/02—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using magnetic elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
- G11C15/046—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using non-volatile storage elements
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19740942 | 1997-09-17 | ||
DE19740942.3 | 1997-09-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1270696A true CN1270696A (zh) | 2000-10-18 |
CN1191586C CN1191586C (zh) | 2005-03-02 |
Family
ID=7842684
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB988092301A Expired - Fee Related CN1191586C (zh) | 1997-09-17 | 1998-09-02 | 存储单元装置及其作为磁性ram与联合存储器的应用 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6490190B1 (zh) |
EP (1) | EP1016087B1 (zh) |
JP (1) | JP4187925B2 (zh) |
KR (1) | KR100564663B1 (zh) |
CN (1) | CN1191586C (zh) |
DE (1) | DE59804346D1 (zh) |
TW (1) | TW411471B (zh) |
WO (1) | WO1999014760A1 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7102922B2 (en) | 2001-04-26 | 2006-09-05 | Renesas Technology Corp. | Thin film magnetic memory device capable of conducting stable data read and write operations |
CN1311472C (zh) * | 2000-12-05 | 2007-04-18 | 因芬尼昂技术股份公司 | 磁阻性存储器及其读取方法 |
CN100449639C (zh) * | 2001-12-21 | 2009-01-07 | 自由度半导体公司 | 用于高密度存储器的磁电部件 |
CN1725370B (zh) * | 2004-06-30 | 2011-04-13 | 国际商业机器公司 | 降低功耗的mram器件各向异性轴角选择方法和结构 |
CN102165530A (zh) * | 2008-09-24 | 2011-08-24 | 高通股份有限公司 | 减少存储器装置的自由层的自旋抽运感应阻尼 |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19853447A1 (de) | 1998-11-19 | 2000-05-25 | Siemens Ag | Magnetischer Speicher |
US8297377B2 (en) | 1998-11-20 | 2012-10-30 | Vitruvian Exploration, Llc | Method and system for accessing subterranean deposits from the surface and tools therefor |
US8376052B2 (en) | 1998-11-20 | 2013-02-19 | Vitruvian Exploration, Llc | Method and system for surface production of gas from a subterranean zone |
US7025154B2 (en) | 1998-11-20 | 2006-04-11 | Cdx Gas, Llc | Method and system for circulating fluid in a well system |
US7048049B2 (en) | 2001-10-30 | 2006-05-23 | Cdx Gas, Llc | Slant entry well system and method |
US6280000B1 (en) | 1998-11-20 | 2001-08-28 | Joseph A. Zupanick | Method for production of gas from a coal seam using intersecting well bores |
GB9921752D0 (en) * | 1999-09-15 | 1999-11-17 | Wang Frank Z | Diode-free cross-point array architecture for magnetic random access memories |
US6473336B2 (en) * | 1999-12-16 | 2002-10-29 | Kabushiki Kaisha Toshiba | Magnetic memory device |
DE10010457A1 (de) * | 2000-03-03 | 2001-09-20 | Infineon Technologies Ag | Integrierter Speicher mit Speicherzellen mit magnetoresistivem Speichereffekt |
DE10030234C2 (de) * | 2000-06-20 | 2003-03-27 | Infineon Technologies Ag | Integrierter Speicher mit Speicherzellen mit magnetoresistivem Speichereffekt |
DE10032275A1 (de) | 2000-07-03 | 2002-01-24 | Infineon Technologies Ag | Integrierter Speicher mit Speicherzellen mit magnetoresistivem Speichereffekt und Verfahren zum Betrieb eines solchen Speichers |
DE10032274A1 (de) * | 2000-07-03 | 2002-01-24 | Infineon Technologies Ag | Integrierte Speicher mit Speicherzellen mit magnetoresistivem Speichereffekt |
DE10034062A1 (de) | 2000-07-13 | 2002-01-24 | Infineon Technologies Ag | Integrierter Halbleiterspeicher mit Speicherzellen in mehre-ren Speicherzellenfeldern und Verfahren zur Reparatur eines solchen Speichers |
DE10034083C1 (de) * | 2000-07-13 | 2002-03-14 | Infineon Technologies Ag | Halbleiterspeicher mit wahlfreiem Zugeriff mit reduziertem Signalüberkoppeln |
DE10037976C2 (de) | 2000-08-03 | 2003-01-30 | Infineon Technologies Ag | Anordnung zum verlustarmen Schreiben eines MRAMs |
EP1187103A3 (en) * | 2000-08-04 | 2003-01-08 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistance effect device, head, and memory element |
TW531846B (en) | 2000-08-09 | 2003-05-11 | Infineon Technologies Ag | Memory element and method for fabricating a memory element |
DE10043440C2 (de) * | 2000-09-04 | 2002-08-29 | Infineon Technologies Ag | Magnetoresistiver Speicher und Verfahren zu seinem Auslesen |
DE10051173C2 (de) * | 2000-10-16 | 2002-09-12 | Infineon Technologies Ag | Anordnung und Verfahren zur Verringerung des Spannungsabfalles entlang einer Wortleitung/Bitleitung eines MRAM-Speichers |
DE10053965A1 (de) | 2000-10-31 | 2002-06-20 | Infineon Technologies Ag | Verfahren zur Verhinderung unerwünschter Programmierungen in einer MRAM-Anordnung |
DE10058047A1 (de) * | 2000-11-23 | 2002-06-13 | Infineon Technologies Ag | Integrierter Speicher mit einer Anordnung von nicht-flüchtigen Speicherzellen und Verfahren zur Herstellung und zum Betrieb des integrierten Speichers |
JP3667244B2 (ja) * | 2001-03-19 | 2005-07-06 | キヤノン株式会社 | 磁気抵抗素子、それを用いたメモリ素子、磁気ランダムアクセスメモリ及び磁気ランダムアクセスメモリの記録再生方法 |
DE10118197C2 (de) * | 2001-04-11 | 2003-04-03 | Infineon Technologies Ag | Integrierte magnetoresistive Halbleiterspeicheranordnung und Verfahren zum Beschreiben derselben |
JP2002353533A (ja) * | 2001-05-29 | 2002-12-06 | Sony Corp | 磁気抵抗効果素子、磁気抵抗効果型磁気センサ、磁気抵抗効果型磁気ヘッド、および磁気メモリ |
US6385079B1 (en) * | 2001-08-31 | 2002-05-07 | Hewlett-Packard Company | Methods and structure for maximizing signal to noise ratio in resistive array |
DE10144385C2 (de) * | 2001-09-10 | 2003-07-24 | Siemens Ag | Standardzellenanordnung für ein magneto-resistives Bauelement und hierauf aufbauende elektronisch magneto-resistive Bauelemente |
US6791859B2 (en) | 2001-11-20 | 2004-09-14 | Micron Technology, Inc. | Complementary bit PCRAM sense amplifier and method of operation |
DE10158795B4 (de) * | 2001-11-30 | 2005-12-22 | Infineon Technologies Ag | Magnetoresistive Speicherzelle mit dynamischer Referenzschicht |
KR100450794B1 (ko) * | 2001-12-13 | 2004-10-01 | 삼성전자주식회사 | 마그네틱 랜덤 엑세스 메모리 및 그 작동 방법 |
US6795334B2 (en) | 2001-12-21 | 2004-09-21 | Kabushiki Kaisha Toshiba | Magnetic random access memory |
EP1321944B1 (en) | 2001-12-21 | 2008-07-30 | Kabushiki Kaisha Toshiba | Magnetic random access memory |
DE60205569T2 (de) * | 2001-12-21 | 2006-05-18 | Kabushiki Kaisha Toshiba | MRAM mit gestapelten Speicherzellen |
US6839269B2 (en) * | 2001-12-28 | 2005-01-04 | Kabushiki Kaisha Toshiba | Magnetic random access memory |
JP4040414B2 (ja) | 2001-12-28 | 2008-01-30 | 株式会社東芝 | 磁気メモリ |
KR100827518B1 (ko) * | 2001-12-29 | 2008-05-06 | 주식회사 하이닉스반도체 | 전압 팔로워를 이용한 상변환 메모리 장치 |
JP2003242771A (ja) | 2002-02-15 | 2003-08-29 | Toshiba Corp | 半導体記憶装置 |
US6665205B2 (en) * | 2002-02-20 | 2003-12-16 | Hewlett-Packard Development Company, Lp. | Shared global word line magnetic random access memory |
KR100447141B1 (ko) * | 2002-03-09 | 2004-09-07 | (주)멜파스 | 차폐수단을 포함하는 반도체 지문감지장치 |
US6809981B2 (en) * | 2002-04-10 | 2004-10-26 | Micron Technology, Inc. | Wordline driven method for sensing data in a resistive memory array |
US8333245B2 (en) | 2002-09-17 | 2012-12-18 | Vitruvian Exploration, Llc | Accelerated production of gas from a subterranean zone |
JP3873015B2 (ja) | 2002-09-30 | 2007-01-24 | 株式会社東芝 | 磁気メモリ |
AU2003274523A1 (en) * | 2002-11-27 | 2004-06-18 | Koninklijke Philips Electronics N.V. | Current re-routing scheme for serial-programmed mram |
US6947313B2 (en) * | 2003-08-27 | 2005-09-20 | Hewlett-Packard Development Company, L.P. | Method and apparatus of coupling conductors in magnetic memory |
JPWO2007043358A1 (ja) * | 2005-10-07 | 2009-04-16 | コニカミノルタオプト株式会社 | セルロースエステルフィルムの製造方法、セルロースエステルフィルム、偏光板及び液晶表示装置 |
US7236389B2 (en) * | 2005-11-17 | 2007-06-26 | Sharp Laboratories Of America, Inc. | Cross-point RRAM memory array having low bit line crosstalk |
US8159870B2 (en) * | 2008-04-04 | 2012-04-17 | Qualcomm Incorporated | Array structural design of magnetoresistive random access memory (MRAM) bit cells |
JP6481667B2 (ja) * | 2016-07-20 | 2019-03-13 | 株式会社デンソー | ニューラルネットワーク回路 |
US10256273B2 (en) * | 2016-09-29 | 2019-04-09 | Globalfoundries Singapore Pte. Ltd. | High density cross point resistive memory structures and methods for fabricating the same |
US10586598B2 (en) * | 2017-09-14 | 2020-03-10 | Silicon Storage Technology, Inc. | System and method for implementing inference engine by optimizing programming operation |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US5173873A (en) * | 1990-06-28 | 1992-12-22 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | High speed magneto-resistive random access memory |
US5343422A (en) * | 1993-02-23 | 1994-08-30 | International Business Machines Corporation | Nonvolatile magnetoresistive storage device using spin valve effect |
JPH0766033A (ja) * | 1993-08-30 | 1995-03-10 | Mitsubishi Electric Corp | 磁気抵抗素子ならびにその磁気抵抗素子を用いた磁性薄膜メモリおよび磁気抵抗センサ |
JP2774243B2 (ja) * | 1994-05-27 | 1998-07-09 | 富士通株式会社 | 記憶装置 |
US5640343A (en) | 1996-03-18 | 1997-06-17 | International Business Machines Corporation | Magnetic memory array using magnetic tunnel junction devices in the memory cells |
US5872739A (en) * | 1997-04-17 | 1999-02-16 | Radiant Technologies | Sense amplifier for low read-voltage memory cells |
US5838608A (en) * | 1997-06-16 | 1998-11-17 | Motorola, Inc. | Multi-layer magnetic random access memory and method for fabricating thereof |
DE19744095A1 (de) * | 1997-10-06 | 1999-04-15 | Siemens Ag | Speicherzellenanordnung |
-
1998
- 1998-08-20 TW TW087113718A patent/TW411471B/zh active
- 1998-09-02 WO PCT/DE1998/002589 patent/WO1999014760A1/de active IP Right Grant
- 1998-09-02 EP EP98952536A patent/EP1016087B1/de not_active Expired - Lifetime
- 1998-09-02 KR KR1020007002856A patent/KR100564663B1/ko not_active IP Right Cessation
- 1998-09-02 CN CNB988092301A patent/CN1191586C/zh not_active Expired - Fee Related
- 1998-09-02 JP JP2000512211A patent/JP4187925B2/ja not_active Expired - Fee Related
- 1998-09-02 DE DE59804346T patent/DE59804346D1/de not_active Expired - Lifetime
-
2000
- 2000-03-17 US US09/528,159 patent/US6490190B1/en not_active Expired - Lifetime
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1311472C (zh) * | 2000-12-05 | 2007-04-18 | 因芬尼昂技术股份公司 | 磁阻性存储器及其读取方法 |
US7102922B2 (en) | 2001-04-26 | 2006-09-05 | Renesas Technology Corp. | Thin film magnetic memory device capable of conducting stable data read and write operations |
US7379366B2 (en) | 2001-04-26 | 2008-05-27 | Renesas Technology Corp. | Thin film magnetic memory device capable of conducting stable data read and write operations |
US7567454B2 (en) | 2001-04-26 | 2009-07-28 | Renesas Technology Corp. | Thin film magnetic memory device capable of conducting stable data read and write operations |
US7733692B2 (en) | 2001-04-26 | 2010-06-08 | Renesas Technology Corp. | Thin film magnetic memory device capable of conducting stable data read and write operations |
US8000133B2 (en) | 2001-04-26 | 2011-08-16 | Renesas Electronics Corporation | Thin film magnetic memory device capable of conducting stable data read and write operations |
US8351253B2 (en) | 2001-04-26 | 2013-01-08 | Renesas Electronics Corporation | Thin film magnetic memory device capable of conducting stable data read and write operations |
CN100449639C (zh) * | 2001-12-21 | 2009-01-07 | 自由度半导体公司 | 用于高密度存储器的磁电部件 |
CN1725370B (zh) * | 2004-06-30 | 2011-04-13 | 国际商业机器公司 | 降低功耗的mram器件各向异性轴角选择方法和结构 |
CN102165530A (zh) * | 2008-09-24 | 2011-08-24 | 高通股份有限公司 | 减少存储器装置的自由层的自旋抽运感应阻尼 |
CN106328185A (zh) * | 2008-09-24 | 2017-01-11 | 高通股份有限公司 | 减少存储器装置的自由层的自旋抽运感应阻尼 |
US9929211B2 (en) | 2008-09-24 | 2018-03-27 | Qualcomm Incorporated | Reducing spin pumping induced damping of a free layer of a memory device |
Also Published As
Publication number | Publication date |
---|---|
EP1016087B1 (de) | 2002-06-05 |
TW411471B (en) | 2000-11-11 |
WO1999014760A1 (de) | 1999-03-25 |
JP4187925B2 (ja) | 2008-11-26 |
KR100564663B1 (ko) | 2006-03-29 |
EP1016087A1 (de) | 2000-07-05 |
CN1191586C (zh) | 2005-03-02 |
DE59804346D1 (de) | 2002-07-11 |
US6490190B1 (en) | 2002-12-03 |
KR20010024102A (ko) | 2001-03-26 |
JP2001516933A (ja) | 2001-10-02 |
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