CN1255860C - 堆叠膜图案的形成方法 - Google Patents
堆叠膜图案的形成方法 Download PDFInfo
- Publication number
- CN1255860C CN1255860C CN03142464.3A CN03142464A CN1255860C CN 1255860 C CN1255860 C CN 1255860C CN 03142464 A CN03142464 A CN 03142464A CN 1255860 C CN1255860 C CN 1255860C
- Authority
- CN
- China
- Prior art keywords
- film
- gas
- etching
- pattern
- layer structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 26
- 235000008708 Morus alba Nutrition 0.000 title 1
- 240000000249 Morus alba Species 0.000 title 1
- 238000005530 etching Methods 0.000 claims abstract description 80
- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 239000000460 chlorine Substances 0.000 claims abstract description 17
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 14
- 239000011737 fluorine Substances 0.000 claims abstract description 14
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 103
- 229920005591 polysilicon Polymers 0.000 claims description 102
- 230000003647 oxidation Effects 0.000 claims description 70
- 238000007254 oxidation reaction Methods 0.000 claims description 70
- 230000015572 biosynthetic process Effects 0.000 claims description 19
- 239000011159 matrix material Substances 0.000 claims description 19
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910021332 silicide Inorganic materials 0.000 claims description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010408 film Substances 0.000 abstract description 302
- 239000010409 thin film Substances 0.000 abstract description 10
- 239000000203 mixture Substances 0.000 abstract description 5
- 238000001312 dry etching Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 89
- 239000007789 gas Substances 0.000 description 69
- 239000011241 protective layer Substances 0.000 description 14
- 239000011521 glass Substances 0.000 description 11
- 239000012528 membrane Substances 0.000 description 11
- 239000000047 product Substances 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 239000003870 refractory metal Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- -1 phosphonium ion Chemical class 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 241001012508 Carpiodes cyprinus Species 0.000 description 3
- 238000010306 acid treatment Methods 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 238000007715 excimer laser crystallization Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000003595 mist Substances 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000002180 anti-stress Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
Abstract
Description
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002165163 | 2002-06-06 | ||
JP165163/2002 | 2002-06-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1469438A CN1469438A (zh) | 2004-01-21 |
CN1255860C true CN1255860C (zh) | 2006-05-10 |
Family
ID=19195029
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN03142464.3A Expired - Lifetime CN1255860C (zh) | 2002-06-06 | 2003-06-06 | 堆叠膜图案的形成方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US6933241B2 (zh) |
CN (1) | CN1255860C (zh) |
GB (1) | GB2391386B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108155089A (zh) * | 2017-12-05 | 2018-06-12 | 深圳市华星光电技术有限公司 | 一种干刻蚀方法及多晶硅薄膜晶体管 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005228819A (ja) * | 2004-02-10 | 2005-08-25 | Mitsubishi Electric Corp | 半導体装置 |
JP4325802B2 (ja) * | 2004-08-02 | 2009-09-02 | Nec液晶テクノロジー株式会社 | Tftアレイパターン形成方法 |
JP4964442B2 (ja) * | 2005-08-10 | 2012-06-27 | 三菱電機株式会社 | 薄膜トランジスタおよびその製造方法 |
US7951728B2 (en) | 2007-09-24 | 2011-05-31 | Applied Materials, Inc. | Method of improving oxide growth rate of selective oxidation processes |
CN101740373B (zh) * | 2008-11-14 | 2011-11-30 | 中芯国际集成电路制造(北京)有限公司 | 浅沟槽形成方法 |
JP2010258202A (ja) * | 2009-04-24 | 2010-11-11 | Renesas Electronics Corp | 半導体装置及びその製造方法 |
TWI449004B (zh) * | 2010-08-30 | 2014-08-11 | Au Optronics Corp | 畫素結構及其製造方法 |
KR102171650B1 (ko) | 2012-08-10 | 2020-10-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
TWI582993B (zh) | 2012-11-30 | 2017-05-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
CN104576387B (zh) * | 2013-10-14 | 2017-07-25 | 上海和辉光电有限公司 | 低温多晶硅薄膜晶体管制造方法 |
DE102014005879B4 (de) * | 2014-04-16 | 2021-12-16 | Infineon Technologies Ag | Vertikale Halbleitervorrichtung |
CN105336602A (zh) * | 2014-07-15 | 2016-02-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 控制多晶硅刻蚀侧壁角度的方法 |
KR20180078018A (ko) * | 2016-12-29 | 2018-07-09 | 엘지디스플레이 주식회사 | 전계 발광 표시 장치 및 그 제조 방법 |
CN107221503A (zh) * | 2017-06-02 | 2017-09-29 | 京东方科技集团股份有限公司 | 一种薄膜晶体管的制作方法、薄膜晶体管及显示基板 |
CN107507771A (zh) * | 2017-07-24 | 2017-12-22 | 武汉华星光电技术有限公司 | 一种多晶硅蚀刻方法 |
FR3104810B1 (fr) * | 2019-12-17 | 2023-03-31 | Soitec Silicon On Insulator | Procede de gravure de substrats comportant une couche mince superficielle, pour ameliorer l’uniformite d’epaisseur de ladite couche |
CN117280891A (zh) * | 2022-04-19 | 2023-12-22 | 京东方科技集团股份有限公司 | 显示基板及制作方法、显示装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4546376A (en) * | 1983-09-30 | 1985-10-08 | Citizen Watch Co., Ltd. | Device for semiconductor integrated circuits |
JP2678903B2 (ja) | 1987-10-14 | 1997-11-19 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP2841381B2 (ja) | 1988-09-19 | 1998-12-24 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
JP2675713B2 (ja) * | 1991-05-10 | 1997-11-12 | 株式会社東芝 | 半導体装置及びその製造方法 |
TW321731B (zh) * | 1994-07-27 | 1997-12-01 | Hitachi Ltd | |
US5723371A (en) * | 1994-08-23 | 1998-03-03 | Samsung Electronics Co., Ltd. | Method for fabricating a thin film transistor having a taper-etched semiconductor film |
JP3474286B2 (ja) | 1994-10-26 | 2003-12-08 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
US5573964A (en) | 1995-11-17 | 1996-11-12 | International Business Machines Corporation | Method of making thin film transistor with a self-aligned bottom gate using diffusion from a dopant source layer |
JPH09263974A (ja) | 1996-03-29 | 1997-10-07 | Sanyo Electric Co Ltd | Cr膜のエッチング方法 |
US6124154A (en) | 1996-10-22 | 2000-09-26 | Seiko Epson Corporation | Fabrication process for thin film transistors in a display or electronic device |
US5856239A (en) * | 1997-05-02 | 1999-01-05 | National Semiconductor Corporaton | Tungsten silicide/ tungsten polycide anisotropic dry etch process |
US6235214B1 (en) * | 1998-12-03 | 2001-05-22 | Applied Materials, Inc. | Plasma etching of silicon using fluorinated gas mixtures |
TW417165B (en) * | 1999-06-23 | 2001-01-01 | Taiwan Semiconductor Mfg | Manufacturing method for reducing the critical dimension of the wire and gap |
TW480576B (en) * | 2000-05-12 | 2002-03-21 | Semiconductor Energy Lab | Semiconductor device and method for manufacturing same |
JP2001332741A (ja) | 2000-05-25 | 2001-11-30 | Sony Corp | 薄膜トランジスタの製造方法 |
JP4926329B2 (ja) | 2001-03-27 | 2012-05-09 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法、電気器具 |
JP3605823B2 (ja) | 2001-08-03 | 2004-12-22 | 日本電気株式会社 | 薄膜トランジスタ・アレイ基板およびアクティブマトリックス型液晶表示装置 |
-
2003
- 2003-05-29 US US10/446,713 patent/US6933241B2/en not_active Expired - Lifetime
- 2003-06-02 GB GB0312668A patent/GB2391386B/en not_active Expired - Lifetime
- 2003-06-06 CN CN03142464.3A patent/CN1255860C/zh not_active Expired - Lifetime
-
2004
- 2004-05-28 US US10/855,394 patent/US7317227B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108155089A (zh) * | 2017-12-05 | 2018-06-12 | 深圳市华星光电技术有限公司 | 一种干刻蚀方法及多晶硅薄膜晶体管 |
Also Published As
Publication number | Publication date |
---|---|
US6933241B2 (en) | 2005-08-23 |
GB2391386B (en) | 2004-11-17 |
US7317227B2 (en) | 2008-01-08 |
GB0312668D0 (en) | 2003-07-09 |
CN1469438A (zh) | 2004-01-21 |
GB2391386A (en) | 2004-02-04 |
US20040219721A1 (en) | 2004-11-04 |
US20030228760A1 (en) | 2003-12-11 |
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Effective date of registration: 20230516 Address after: Good road Taiwan Taipei City Neihu district Chinese 168 Lane 15 Building No. 4 Patentee after: HANNSTAR DISPLAY Corp. Address before: Samoa Apia, hiSoft center, No. 217 mailbox Patentee before: Jinzhen Co.,Ltd. |
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