CN1237623C - 在衬底上成形晶体管的方法和含聚亚苯基聚酰亚胺的衬底 - Google Patents

在衬底上成形晶体管的方法和含聚亚苯基聚酰亚胺的衬底 Download PDF

Info

Publication number
CN1237623C
CN1237623C CNB018081681A CN01808168A CN1237623C CN 1237623 C CN1237623 C CN 1237623C CN B018081681 A CNB018081681 A CN B018081681A CN 01808168 A CN01808168 A CN 01808168A CN 1237623 C CN1237623 C CN 1237623C
Authority
CN
China
Prior art keywords
substrate
polyimides
layer
transistor
polyphenylene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB018081681A
Other languages
English (en)
Other versions
CN1441967A (zh
Inventor
K·L·德尼斯
陈宇
P·S·德尔蔡克
J·M·雅各布斯
P·T·卡兹拉斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
E Ink Corp
Original Assignee
E Ink Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by E Ink Corp filed Critical E Ink Corp
Publication of CN1441967A publication Critical patent/CN1441967A/zh
Application granted granted Critical
Publication of CN1237623C publication Critical patent/CN1237623C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742Thin film unipolar transistors
    • H01L29/6675Amorphous silicon or polysilicon transistors
    • H01L29/66765Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support

Abstract

通过在包含聚亚苯基聚酰亚胺的衬底上沉积至少一个半导体材料层来制造晶体管。该衬底允许在用于成形该晶体管的过程中采用超过300℃的加工温度,从而能够制成高质量硅半导体层。该衬底还具有低热膨胀系数,与硅的膨胀系数密切匹配,从而可减少任何硅层龟裂或脱层的倾向。

Description

在衬底上成形晶体管的方法和含聚亚苯基聚酰亚胺的衬底
技术领域
本发明涉及一种制造薄膜晶体管的方法。
薄膜晶体管(TFT)已知在,特别是,控制各种类型显示器方面有用;例如,TFT被普遍用来控制便携式电脑和类似电子装置中使用的液晶显示器。TFT还可用来控制电泳显示器;例如参见WO-A-00/67327;WO-A-01/08241;WO-A-01/170209;WO-A-01/17040;和WO-A-01/17041。在此,所有这些申请的公开内容均收作参考。
虽然大多数TFT迄今一直是在刚性衬底上制造的,然而对在柔性衬底,尤其是在柔性聚合物薄膜上制造TFT的兴趣正与日俱增。在此种柔性衬底上制造的TFT可构成既轻又结实的大显示器的基础,因而使它们得以用在移动装置中。基于无定形硅半导体的TFT由于能以最少的工艺步骤制造并且热量消耗低,故用于此种柔性衬底颇受青睐。无定形硅晶体管是在超薄不锈钢衬底(例如参见Ma等人,《应用物理通讯》74(18),2661(1999))上和在聚酰亚胺薄膜(参见Gleskova等人,《IEEE电子器件通讯》20(9),473(1999))上制造的。
然而,后一篇文章所描述的方法使用的聚酰亚胺,以商品名“Kapton”市售供应,仅具有约300℃的玻璃化转变温度,这就限制了制造过程中能够采用的温度,并因而生产出不甚令人满意的无定形硅半导体层。此种聚酰亚胺还具有高吸湿(约4wt%)的特性,而此种高吸湿又可造成衬底的溶胀以及随之而来在衬底上沉积的薄层的龟裂或薄层从衬底上的剥离。虽然不锈钢衬底能够耐受远高于300℃的温度,但此种衬底要求在其上制造晶体管之前进行钝化和平面化的步骤。要求钝化为的是保证准备在衬底上形成的邻接金属导体之间有恰当的电气绝缘,以及保证不锈钢中潜在杂质不会扩散到晶体管中。不过,不锈钢衬底却又具有高尺寸稳定性和在制造环境中容易操作的优点。
现已发现,某些类型聚酰亚胺具有使其非常适合在TFT制造中作为使用。
因此,本发明提供一种通过在衬底上沉积至少一层半导体材料从而在该衬底上成形至少一个晶体管的方法。在本发明方法中,衬底包含聚亚苯基聚酰亚胺。该方法尤其预期用于成形无定形硅晶体管,而在此种情况下,半导体材料当然是一种无定形硅。
本发明还提供在包含聚亚苯基聚酰亚胺的衬底上成形的晶体管,该衬底载有至少一个晶体管。
唯一的附图是按本发明方法在聚酰亚胺衬底上成形的薄膜晶体管阵列的一个晶体管的剖面示意图。
优选用于本发明方法中的聚亚苯基聚酰亚胺是由UBE(美国)公司(55 East 59th Street,18th Floor,纽约NY 10022,美国)以商品名Upilex-S和Upilex-VT市售供应的那些。这两种材料据制造商称,具有通式:
其中R是亚烷基基团。此种聚酰亚胺是联苯-3,3’,4,4’-四羧酸与α,ω-链烷二胺如1,6-己二胺(正式地称己烷-1,6-二胺)的衍生物。这两种材料之间的主要区别在于,Upilex-S是简单聚酰亚胺薄膜,而Upilex-VT是一侧表面经过了处理,以促使薄膜不用粘合剂,仅靠热就能层合到陶瓷或金属箔上。为达到本发明的目的,Upilex VT可层合到不锈钢背衬薄膜上。另一种优选用于本发明方法中的聚酰亚胺是Upilex-50SS,得自同一制造商。
聚亚苯基聚酰亚胺具有比此前用作晶体管衬底的其他聚酰亚胺高得多的玻璃化转变温度和低得多的吸水性。上面已经提到的市售Upilex材料具有超过400℃的玻璃化转变温度和不超过约1.4%的吸水性。这样高的玻璃化转变温度允许在制造过程中采用比此前作为晶体管衬底使用的聚酰亚胺迄今可能达到的温度更高的温度(大于约300℃,优选大于约400℃),而此种更高的加工温度将生产出具有较高可移动性和较低超限漏电流的较高品质硅层。聚亚苯基聚酰亚胺在加工期间还具有高尺寸稳定性和表面光滑的优点,这对于薄膜晶体管成形中使用的薄层材料的沉积至关重要;例如,上面提到的Upilex-50SS具有约0.01%的尺寸稳定性和约20~30nm的平均表面粗糙度。聚亚苯基聚酰亚胺的另一个优点是它们的低热膨胀系数,典型值为约2~10×10-6-1,相比之下此前使用的聚酰亚胺的典型值为35×10-6-1。鉴于硅的热膨胀系数为约3×10-6-1,聚亚苯基聚酰亚胺衬底的系数与沉积在其上的硅层匹配密切得多,因此硅层龟裂和/或脱层的倾向低得多。
聚亚苯基聚酰亚胺衬底的上述性能使得本发明方法能很好地适应卷材到卷材的加工,其中半导体材料的沉积是在聚酰亚胺衬底的连续片材上进行的。
上面已经提到,本发明方法中使用的聚亚苯基聚酰亚胺在其准备沉积半导体材料的相反一面可以具有,也可以不具有金属背衬层。此种金属背衬层对提高晶体管制造过程中薄膜的机械整体性有用,从而避免,例如,操作期间聚酰亚胺薄膜拉长或畸变的任何倾向,减少在衬底上成形晶体管期间衬底的畸变。另外,金属背衬层还可起到挡光的作用,以减少任何由聚酰亚胺薄膜背面入射的光在半导体材料中造成的不希望的光效应(例如,在无定形硅膜中的光生电流)。金属背衬层不必是连续的;该层可具有贯通层的孔,以降低挺度并从而赋予带金属背衬的衬底以更高的柔性。倘若设有此种孔,出于显而易见的原因较好的是,它们可成形为一种规则图形,相应地,某些或全部孔可用于衬底与制造过程所用设备之间的机械套准。的确,在某些情况下,图形金属背衬层可作为荫罩用于在衬底上成形晶体管期间的光刻胶曝光图案成形步骤中。替代或附加地,可能有利的是,在聚酰亚胺本身中加入染料以阻止或消除此种不希望的光效应。
如同在某些现有技术方法中那样,可能较好的是,在向此种衬底上沉积晶体管之前先在衬底上沉积一种二氧化硅、氮化铝、氮化硅或其他材料的钝化层。就典型而言,此种钝化层的厚度可介于约20~约100nm。钝化不仅对提高聚酰亚胺表面的表面电阻,从而增加连接导体之间的电气绝缘有用,而且通过防止衬底在加工期间吸水还能提高衬底的尺寸稳定性,而为达到后一目的,较好的是,在衬底两个表面都设置钝化层。较好的还有,对衬底进行热处理(“烘烤”)以便在钝化层沉积之前从衬底中除掉水分;此种烘烤通常在至少约150℃的温度持续至少约1分钟的时间,优选约3分钟。
可能有利的还有,对钝化的衬底实施后烘烤。按照Philips研究实验室题为“聚合物衬底上的AMLCD和电子学”(《欧洲显示器)1996)的文章,在275℃加热10小时后自由放置的聚酰亚胺薄膜的收缩率可降低2个数量级,而在同样温度下100小时后降低2.4个数量级。在该文章中描述的一个具体实验中,275℃下烘烤100小时后,聚酰亚胺薄膜(未指出品牌)收缩了3ppm h-1。据此,若要求对钝化衬底实施此种后烘烤,它应在至少250℃的温度持续至少5小时的时间。尚未在实验中确定上述结果是否适用于张紧卷材形式中的衬底,也未在实验中确定降低收缩是否在预烘烤的衬底在经过冷却、退绕、为在其上成形晶体管所需要的加工、张力下再成卷以及随后预热几天之后,也如同在卷材到卷材加工中在衬底上成形晶体管那样必要。替代地,衬底可在临实施成形晶体管所要求的层沉积之前在传送带烘炉中进行预烘烤。
然而,聚亚苯基聚酰亚胺的表面电阻却是如此之高(典型值大于1016Ω),以致在许多情况下,有可能在相邻导体之间不需要此种钝化层便能获得足够的电气绝缘。若省略钝化层,在衬底上沉积半导体层之前烘烤衬底以赶出水分和任何其他吸收在聚酰亚胺上的挥发性材料,仍然是有利的,因为这样可降低聚酰亚胺因吸水造成的溶胀并可提高在聚酰亚胺上成形晶体管期间聚酰亚胺的尺寸稳定性。此种烘烤较好在大于250℃的温度持续至少1小时的时间。在下面描述的一种优选实施方案中,衬底加热到接近其玻璃化转变温度的350℃,并持续4小时。
下面描述的本发明目前优选实施方案采用倒相晶体管设计,其中门(或栅)电极紧靠衬底布置。为成形此种倒相晶体管,第一步(按所描述的方式完成对衬底的任何可能钝化和/或预烘烤之后)是在衬底上沉积金属层。为此目的,优选的金属是铬。在沉积半导体材料以便形成要成形的晶体管阵列的门电极和选通线之前,通常优选将铬或其他金属沉积为连续膜,典型厚度介于50~200nm,然后使金属膜图形化,典型方法采用传统光刻技术。方法的下一个步骤通常是介电材料的沉积,例如氮化硅;此种沉积可通过等离子增强的化学气相沉积而方便地完成。随后成形半导体材料,优选无定形硅,依然方便地采用等离子增强的化学气相沉积。如同在上面提到的WO-A-00/67327中所讨论的,在一种适当设计中,无定形硅层(以及相联系的介电层)可保持为非图形的,因此该无定形硅层连续延伸在一对相邻晶体管之间。接着,在该无定形硅上沉积n-型硅层,同样,方便地采用等离子增强的化学气相沉积。最后,通常在清洗步骤以除掉化学气相沉积过程留下的残余物之后,在n-型硅层上沉积金属层,例如,铝层,该金属层仍可方便地采用热蒸发来沉积。随后,该金属层通过传统光刻技术转化为图形,以便形成源和漏电极,然后该图形化的金属层被用作n-型硅层的反应离子腐蚀用的腐蚀掩模;用四氟化碳/氧气混合物进行腐蚀,据发现令人满意。
下面将结合附图详细描述本发明优选的实施方案,然而仅作为举例说明而已,图中显示按本发明方法在聚亚苯基聚酰亚胺衬底上成形的一个晶体管的断面示意图。
该附图显示在聚亚苯基聚酰亚胺衬底12上成形的晶体管阵列(总称为10)的一个晶体管。图中画出的衬底12备有不锈钢金属背衬层14,沿整个背衬按规则间隔分布着通孔16,在图中仅画出一个。如同上面已经提到的,金属背衬层14的存在在本发明方法中是任选的,尽管此种金属背衬层的确给衬底提供额外的机械整体性,并因此便于衬底的操作,尤其当本发明在卷材到卷材的涂布设备上实施时。
在衬底12的上表面上(如图所示),沉积着由二氧化硅或氮化硅形成的钝化层18。如上所述,此种钝化层18的存在是任选的,而在某些情况下,钝化层18可以省略,因为聚亚苯基聚酰亚胺的高表面电阻在相邻晶体管之间已提供足够绝缘。然而,在省掉钝化层18时须小心,因为倘若不存在这一层,则从聚酰亚胺衬底12排出的气体往往会导致各种各样层与该衬底的脱层。
在钝化层18的上表面,沉积着按一定间隔排列的金属门电极的阵列20(图中仅看到一个门电极),而在电极20的上面顺序地沉积着由氮化硅形成的介电层22和无定形硅的层24。如上面提到的WO-A-00/67327所讨论的,介电层22和无定形硅层24可保持为非图形的,因此不必使这些层图形化,从而大大降低了晶体管阵列的制造成本。最后,该晶体管阵列包含n-型硅的层26和金属电极层28;这两个层采用任何传统方法转化为图形以提供晶体管的源和漏电极。
本发明第二优选实施方案大体类似于上面所描述的方案,只是使用了不带金属背衬或钝化层的聚酰亚胺衬底。在该第二优选实施方案中,上述Upilex-50SS首先在350℃烘烤4小时以去掉水分和任何其他存在的溶剂。一个100nm厚的铬层通过热蒸发沉积在烘烤的衬底上,然后光刻成图形,从而形成最终晶体管阵列的门电极和选通线。接着,通过等离子增强的化学气相沉积(PECVD)使用硅烷/氨混合物在衬底上沉积320nm氮化硅介电层;在此沉积期间,衬底达到其最高加工温度350℃。然后,通过PECVD由纯硅烷沉积160nm无定形硅半导体材料层,随后通过PECVD由硅烷/膦混合物沉积40nm n-型无定形硅层。
在这些PECVD步骤后,在衬底上沉积铝层,并通过光刻成形为图形,于是形成晶体管阵列的源和漏电极。随后,衬底利用四氟化碳/氧气混合物接受反应性离子腐蚀,以图形状铝层作为腐蚀掩模使n-型硅层图形化。最后,采用低分辨率成图步骤使无定形硅和氮化硅层图形化,从而制成与选通粘合线部位的电气接触。
如此制造的薄膜晶体管可直接用于制造电泳显示器或其他类型显示器,而不需要进一步加工。例如,附图所述薄膜晶体管阵列可通过WO-A-00/36465所描述的方法结合到电泳显示器中;在此将该共同未决申请的整个公开内容收作参考。在某些情况下,较好的是提供一种覆盖薄膜晶体管的阻挡层以保护晶体管免遭溶剂或往往会从电泳显示器中扩散出来的其他材料的侵害。
按本发明方法生产的薄膜晶体管阵列尤其准备用于电泳显示器中,特别是封装电泳显示器,如以下文献中描述的那些:美国专利5,930,026;5,961,804;6,017,584;6,067,185;6,118,426;6,120,588;6,120,839;6,124,851;6,130,773;6,130,774;和6,172,798,以及国际申请公开WO 97/04398;WO 98/03896;WO98/19208;WO 98/41898;WO 98/41899;WO 99/10769;WO 99/10768;WO99/10767;WO 99/53373;WO 99/56171;WO 99/59101;WO 99/47970;WO00/03349;WO 00/03291;WO 99/67678;WO 00/05704;WO 99/53371;WO00/20921;WO 00/20922;WO 00/20923;WO 00/26761;WO 00/36465;WO00/38000;WO 00/38001;WO 00/36560;WO 00/20922;WO 00/36666;WO00/59625;WO 00/67110;WO 00/67327和WO 01/02899.在此,所有这些专利和公开的申请的全部公开内容一并收作参考。
在不偏离本发明精神和技术的前提下,从已给出的本发明方法的优选实施方案中可制定出许许多多修改和变化。例如,本发明不限于如附图所示的下门电极晶体管的制造,该方法也可用于上门电极晶体管的制造,其中首先在衬底上制造源和漏电极(带或不带钝化层),然后在电极上面成形无定形硅层和介电层,最后成形门电极作为结构的顶层。可见,上面的描述应视为说明性的,而不是限制性的。
综上所述,可以看出,本发明方法提供一种在柔性衬底上成形晶体管的方法,它允许使用比现有技术方法高的加工温度,因此它能生产出比现有技术方法质量高的半导体层。本发明方法中使用的衬底的热膨胀系数与大多数半导体层的热膨胀系数最接近匹配,因此可减少因该层与衬底之间热膨胀差异造成半导体层龟裂和/或脱层的危险。本发明提供一种能很好地适应卷材到卷材操作的方法,因此本发明方法非常适合在柔性衬底上制造大面积晶体管阵列。

Claims (15)

1.一种在衬底(12)上成形至少一个晶体管(10)的方法,该方法包括在衬底(12)上沉积至少一层半导体材料(24,26),其特征在于,衬底(12)包含聚亚苯基聚酰亚胺,该聚亚苯基聚酰亚胺是联苯-3,3’,4,4’-四羧酸的衍生物。
2.按照权利要求1的方法,其特征在于,该聚酰亚胺是联苯-3,3’,4,4’-四羧酸与α,ω-链烷二胺的衍生物。
3.按照权利要求1中的方法,其特征在于,在半导体材料(24,26)沉积到衬底(12)上之前,在衬底(12)的一个或两个表面沉积钝化层(18)。
4.按照权利要求3的方法,其特征在于,钝化层(18)包含二氧化硅或氮化铝,和/或厚度介于20~100nm。
5.按照权利要求3的方法,其特征在于,衬底(12)在沉积钝化层(18)之前在高于150℃的温度加热至少1分钟的时间.
6.按照权利要求3的方法,其特征在于,衬底(12)在沉积了钝化层(18)之后在高于250℃的温度加热至少5小时的时间。
7.按照权利要求1的方法,其特征在于,衬底(12)在沉积半导体材料(24,26)之前在高于250℃的温度加热至少1小时的时间。
8.按照权利要求1的方法,其特征在于,衬底(12)包含位于其远离半导体材料(24,26)的一面上的金属层(14)。
9.按照权利要求8的方法,其特征在于,金属层(14)具有通孔(16)。
10.按照权利要求1的方法,其特征在于,半导体材料(24)的沉积是在超过300℃的温度进行的。
11.按照权利要求1的方法,其特征在于,半导体材料(24)包含无定形硅。
12.按照权利要求11的方法,其特征在于,无定形硅未制成图形,因此它连续地延伸在至少某些相邻晶体管对之间。
13.按照权利要求1的方法,其特征在于,半导体材料(24,26)的沉积是在衬底(12)的连续片材上进行的。
14.一种包含聚亚苯基聚酰亚胺的衬底(12),该衬底载有至少一个晶体管(10),该聚亚苯基聚酰亚胺是联苯-3,3’,4,4’-四羧酸的衍生物。
15.权利要求14的衬底,其特征在于具有权利要求1~13中任一项规定的任何一个或多个特征。
CNB018081681A 2000-04-18 2001-04-17 在衬底上成形晶体管的方法和含聚亚苯基聚酰亚胺的衬底 Expired - Fee Related CN1237623C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US19773100P 2000-04-18 2000-04-18
US60/197,731 2000-04-18

Publications (2)

Publication Number Publication Date
CN1441967A CN1441967A (zh) 2003-09-10
CN1237623C true CN1237623C (zh) 2006-01-18

Family

ID=22730530

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB018081681A Expired - Fee Related CN1237623C (zh) 2000-04-18 2001-04-17 在衬底上成形晶体管的方法和含聚亚苯基聚酰亚胺的衬底

Country Status (9)

Country Link
US (2) US6825068B2 (zh)
EP (1) EP1275156B1 (zh)
JP (1) JP2003531487A (zh)
KR (1) KR100767233B1 (zh)
CN (1) CN1237623C (zh)
AT (1) ATE438927T1 (zh)
AU (1) AU2001253575A1 (zh)
DE (1) DE60139463D1 (zh)
WO (1) WO2001080287A2 (zh)

Families Citing this family (197)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7259744B2 (en) 1995-07-20 2007-08-21 E Ink Corporation Dielectrophoretic displays
US7999787B2 (en) 1995-07-20 2011-08-16 E Ink Corporation Methods for driving electrophoretic displays using dielectrophoretic forces
US8139050B2 (en) 1995-07-20 2012-03-20 E Ink Corporation Addressing schemes for electronic displays
US6866760B2 (en) * 1998-08-27 2005-03-15 E Ink Corporation Electrophoretic medium and process for the production thereof
US7848006B2 (en) 1995-07-20 2010-12-07 E Ink Corporation Electrophoretic displays with controlled amounts of pigment
US7583251B2 (en) 1995-07-20 2009-09-01 E Ink Corporation Dielectrophoretic displays
US7193625B2 (en) 1999-04-30 2007-03-20 E Ink Corporation Methods for driving electro-optic displays, and apparatus for use therein
US7327511B2 (en) * 2004-03-23 2008-02-05 E Ink Corporation Light modulators
US7411719B2 (en) 1995-07-20 2008-08-12 E Ink Corporation Electrophoretic medium and process for the production thereof
US8040594B2 (en) 1997-08-28 2011-10-18 E Ink Corporation Multi-color electrophoretic displays
US20020113770A1 (en) 1998-07-08 2002-08-22 Joseph M. Jacobson Methods for achieving improved color in microencapsulated electrophoretic devices
US7119772B2 (en) 1999-04-30 2006-10-10 E Ink Corporation Methods for driving bistable electro-optic displays, and apparatus for use therein
US7012600B2 (en) * 1999-04-30 2006-03-14 E Ink Corporation Methods for driving bistable electro-optic displays, and apparatus for use therein
US7119759B2 (en) * 1999-05-03 2006-10-10 E Ink Corporation Machine-readable displays
US8115729B2 (en) 1999-05-03 2012-02-14 E Ink Corporation Electrophoretic display element with filler particles
US8009348B2 (en) 1999-05-03 2011-08-30 E Ink Corporation Machine-readable displays
US7893435B2 (en) 2000-04-18 2011-02-22 E Ink Corporation Flexible electronic circuits and displays including a backplane comprising a patterned metal foil having a plurality of apertures extending therethrough
US6816147B2 (en) 2000-08-17 2004-11-09 E Ink Corporation Bistable electro-optic display, and method for addressing same
KR100586241B1 (ko) * 2000-10-28 2006-06-02 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판 및 제조방법
AU2002230610A1 (en) * 2000-12-05 2002-06-18 E-Ink Corporation Portable eclectronic apparatus with additional electro-optical display
JP4198999B2 (ja) * 2001-03-13 2008-12-17 イー インク コーポレイション 図面を表示するための装置
US20050156340A1 (en) 2004-01-20 2005-07-21 E Ink Corporation Preparation of capsules
EP1666964B1 (en) * 2001-04-02 2018-12-19 E Ink Corporation Electrophoretic medium with improved image stability
US8390918B2 (en) 2001-04-02 2013-03-05 E Ink Corporation Electrophoretic displays with controlled amounts of pigment
US7679814B2 (en) 2001-04-02 2010-03-16 E Ink Corporation Materials for use in electrophoretic displays
US6870661B2 (en) * 2001-05-15 2005-03-22 E Ink Corporation Electrophoretic displays containing magnetic particles
WO2002093246A1 (en) 2001-05-15 2002-11-21 E Ink Corporation Electrophoretic particles
US6982178B2 (en) 2002-06-10 2006-01-03 E Ink Corporation Components and methods for use in electro-optic displays
ATE349028T1 (de) * 2001-07-09 2007-01-15 E Ink Corp Elektrooptische anzeige und kleberzusammensetzung
US7535624B2 (en) * 2001-07-09 2009-05-19 E Ink Corporation Electro-optic display and materials for use therein
AU2002354672A1 (en) * 2001-07-09 2003-01-29 E Ink Corporation Electro-optical display having a lamination adhesive layer
US6819471B2 (en) * 2001-08-16 2004-11-16 E Ink Corporation Light modulation by frustration of total internal reflection
US6825970B2 (en) * 2001-09-14 2004-11-30 E Ink Corporation Methods for addressing electro-optic materials
JP2003168800A (ja) * 2001-11-30 2003-06-13 Mitsubishi Gas Chem Co Inc 薄膜トランジスタ基板
JP3631992B2 (ja) * 2001-11-13 2005-03-23 日東電工株式会社 配線回路基板
US8593396B2 (en) 2001-11-20 2013-11-26 E Ink Corporation Methods and apparatus for driving electro-optic displays
US7952557B2 (en) 2001-11-20 2011-05-31 E Ink Corporation Methods and apparatus for driving electro-optic displays
US9412314B2 (en) 2001-11-20 2016-08-09 E Ink Corporation Methods for driving electro-optic displays
US8558783B2 (en) 2001-11-20 2013-10-15 E Ink Corporation Electro-optic displays with reduced remnant voltage
US9530363B2 (en) 2001-11-20 2016-12-27 E Ink Corporation Methods and apparatus for driving electro-optic displays
US8125501B2 (en) 2001-11-20 2012-02-28 E Ink Corporation Voltage modulated driver circuits for electro-optic displays
JP4615860B2 (ja) 2001-11-20 2011-01-19 イー インク コーポレイション マルチ−ステイブル電子光学ディスプレイの駆動方法、デバイスコントローラ及びマルチ−ステイブル電子光学ディスプレイ
US6885032B2 (en) 2001-11-21 2005-04-26 Visible Tech-Knowledgy, Inc. Display assembly having flexible transistors on a flexible substrate
US6885146B2 (en) 2002-03-14 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Display device comprising substrates, contrast medium and barrier layers between contrast medium and each of substrates
US6950220B2 (en) * 2002-03-18 2005-09-27 E Ink Corporation Electro-optic displays, and methods for driving same
US7223672B2 (en) 2002-04-24 2007-05-29 E Ink Corporation Processes for forming backplanes for electro-optic displays
US7190008B2 (en) 2002-04-24 2007-03-13 E Ink Corporation Electro-optic displays, and components for use therein
US9470950B2 (en) 2002-06-10 2016-10-18 E Ink Corporation Electro-optic displays, and processes for the production thereof
US7110164B2 (en) * 2002-06-10 2006-09-19 E Ink Corporation Electro-optic displays, and processes for the production thereof
US8049947B2 (en) 2002-06-10 2011-11-01 E Ink Corporation Components and methods for use in electro-optic displays
US7554712B2 (en) 2005-06-23 2009-06-30 E Ink Corporation Edge seals for, and processes for assembly of, electro-optic displays
US7649674B2 (en) 2002-06-10 2010-01-19 E Ink Corporation Electro-optic display with edge seal
US7843621B2 (en) 2002-06-10 2010-11-30 E Ink Corporation Components and testing methods for use in the production of electro-optic displays
US8363299B2 (en) 2002-06-10 2013-01-29 E Ink Corporation Electro-optic displays, and processes for the production thereof
US20080024482A1 (en) 2002-06-13 2008-01-31 E Ink Corporation Methods for driving electro-optic displays
US20110199671A1 (en) * 2002-06-13 2011-08-18 E Ink Corporation Methods for driving electrophoretic displays using dielectrophoretic forces
CN101373581B (zh) 2002-06-13 2014-07-16 伊英克公司 具有多个像素的电光显示器
US7839564B2 (en) 2002-09-03 2010-11-23 E Ink Corporation Components and methods for use in electro-optic displays
JP2005537519A (ja) 2002-09-03 2005-12-08 イー−インク コーポレイション 電気光学ディスプレイ
WO2004023202A1 (en) 2002-09-03 2004-03-18 E Ink Corporation Electrophoretic medium with gaseous suspending fluid
US20130063333A1 (en) 2002-10-16 2013-03-14 E Ink Corporation Electrophoretic displays
KR100985418B1 (ko) * 2002-11-26 2010-10-05 이 잉크 코포레이션 가요성 전자 회로 및 디스플레이
US20170052422A1 (en) * 2002-11-26 2017-02-23 E Ink Corporation Flexible electronic circuits and displays
CN101118362A (zh) 2002-12-16 2008-02-06 伊英克公司 电光显示器的底板
US6922276B2 (en) 2002-12-23 2005-07-26 E Ink Corporation Flexible electro-optic displays
US6987603B2 (en) 2003-01-31 2006-01-17 E Ink Corporation Construction of electrophoretic displays
US7910175B2 (en) 2003-03-25 2011-03-22 E Ink Corporation Processes for the production of electrophoretic displays
US7339715B2 (en) 2003-03-25 2008-03-04 E Ink Corporation Processes for the production of electrophoretic displays
ATE485535T1 (de) 2003-03-27 2010-11-15 E Ink Corp Elektrooptische baugruppen
US10726798B2 (en) 2003-03-31 2020-07-28 E Ink Corporation Methods for operating electro-optic displays
JP4921163B2 (ja) * 2003-05-06 2012-04-25 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 切替え可能素子における駆動電圧の低減
EP1639574B1 (en) 2003-06-30 2015-04-22 E Ink Corporation Methods for driving electro-optic displays
US8174490B2 (en) 2003-06-30 2012-05-08 E Ink Corporation Methods for driving electrophoretic displays
WO2005010598A2 (en) 2003-07-24 2005-02-03 E Ink Corporation Electro-optic displays
WO2005020199A2 (en) * 2003-08-19 2005-03-03 E Ink Corporation Methods for controlling electro-optic displays
EP1665214A4 (en) 2003-09-19 2008-03-19 E Ink Corp METHOD FOR REDUCING EDGE EFFECTS IN DISPLAYS
ATE405916T1 (de) * 2003-10-08 2008-09-15 E Ink Corp Elektro-benetzungs-displays
US8319759B2 (en) 2003-10-08 2012-11-27 E Ink Corporation Electrowetting displays
US7551346B2 (en) 2003-11-05 2009-06-23 E Ink Corporation Electro-optic displays, and materials for use therein
EP1680774B9 (en) 2003-11-05 2018-05-16 E Ink Corporation Electrophoretic medium for electro-optic displays
US7672040B2 (en) 2003-11-05 2010-03-02 E Ink Corporation Electro-optic displays, and materials for use therein
US8177942B2 (en) 2003-11-05 2012-05-15 E Ink Corporation Electro-optic displays, and materials for use therein
US20110164301A1 (en) 2003-11-05 2011-07-07 E Ink Corporation Electro-optic displays, and materials for use therein
US8928562B2 (en) 2003-11-25 2015-01-06 E Ink Corporation Electro-optic displays, and methods for driving same
US7206119B2 (en) 2003-12-31 2007-04-17 E Ink Corporation Electro-optic displays, and method for driving same
US7075703B2 (en) 2004-01-16 2006-07-11 E Ink Corporation Process for sealing electro-optic displays
US7388572B2 (en) * 2004-02-27 2008-06-17 E Ink Corporation Backplanes for electro-optic displays
US7492339B2 (en) * 2004-03-26 2009-02-17 E Ink Corporation Methods for driving bistable electro-optic displays
US8289250B2 (en) 2004-03-31 2012-10-16 E Ink Corporation Methods for driving electro-optic displays
US20050253777A1 (en) * 2004-05-12 2005-11-17 E Ink Corporation Tiled displays and methods for driving same
JP2006003775A (ja) * 2004-06-21 2006-01-05 Hitachi Metals Ltd ディスプレイ用基板
KR100626007B1 (ko) * 2004-06-30 2006-09-20 삼성에스디아이 주식회사 박막 트랜지스터, 상기 박막 트랜지스터의 제조방법, 이박막 트랜지스터를 구비한 평판표시장치, 및 이평판표시장치의 제조방법
US20080136774A1 (en) 2004-07-27 2008-06-12 E Ink Corporation Methods for driving electrophoretic displays using dielectrophoretic forces
US11250794B2 (en) 2004-07-27 2022-02-15 E Ink Corporation Methods for driving electrophoretic displays using dielectrophoretic forces
WO2006015044A1 (en) 2004-07-27 2006-02-09 E Ink Corporation Electro-optic displays
US7259106B2 (en) * 2004-09-10 2007-08-21 Versatilis Llc Method of making a microelectronic and/or optoelectronic circuitry sheet
TWI253759B (en) * 2004-11-22 2006-04-21 Au Optronics Corp Method and apparatus for forming thin film transistor
JP2008521065A (ja) 2005-01-26 2008-06-19 イー インク コーポレイション ガス状流体を用いる電気泳動ディスプレイ
US8576162B2 (en) * 2005-03-14 2013-11-05 Sipix Imaging, Inc. Manufacturing processes of backplane for segment displays
US8357616B2 (en) * 2005-04-14 2013-01-22 President And Fellows Of Harvard College Adjustable solubility in sacrificial layers for microfabrication
US20080043318A1 (en) 2005-10-18 2008-02-21 E Ink Corporation Color electro-optic displays, and processes for the production thereof
KR101269304B1 (ko) 2005-10-18 2013-05-29 이 잉크 코포레이션 전기-광학 디스플레이용 컴포넌트
US20070091417A1 (en) * 2005-10-25 2007-04-26 E Ink Corporation Electrophoretic media and displays with improved binder
US7621794B2 (en) * 2005-11-09 2009-11-24 International Display Systems, Inc. Method of encapsulating an organic light-emitting device
US8390301B2 (en) 2006-03-08 2013-03-05 E Ink Corporation Electro-optic displays, and materials and methods for production thereof
US7843624B2 (en) 2006-03-08 2010-11-30 E Ink Corporation Electro-optic displays, and materials and methods for production thereof
TWI350793B (en) 2006-03-08 2011-10-21 E Ink Corp Methods for production of electro-optic displays
US8610988B2 (en) 2006-03-09 2013-12-17 E Ink Corporation Electro-optic display with edge seal
US7952790B2 (en) 2006-03-22 2011-05-31 E Ink Corporation Electro-optic media produced using ink jet printing
US7903319B2 (en) 2006-07-11 2011-03-08 E Ink Corporation Electrophoretic medium and display with improved image stability
US8018640B2 (en) 2006-07-13 2011-09-13 E Ink Corporation Particles for use in electrophoretic displays
US7932548B2 (en) 2006-07-14 2011-04-26 4D-S Pty Ltd. Systems and methods for fabricating self-aligned memory cell
US20080024429A1 (en) * 2006-07-25 2008-01-31 E Ink Corporation Electrophoretic displays using gaseous fluids
US7986450B2 (en) 2006-09-22 2011-07-26 E Ink Corporation Electro-optic display and materials for use therein
US7477444B2 (en) 2006-09-22 2009-01-13 E Ink Corporation & Air Products And Chemical, Inc. Electro-optic display and materials for use therein
US7649666B2 (en) 2006-12-07 2010-01-19 E Ink Corporation Components and methods for use in electro-optic displays
TWI386313B (zh) 2007-01-22 2013-02-21 E Ink Corp 用於光電顯示器之多層薄片
US7688497B2 (en) 2007-01-22 2010-03-30 E Ink Corporation Multi-layer sheet for use in electro-optic displays
US7826129B2 (en) 2007-03-06 2010-11-02 E Ink Corporation Materials for use in electrophoretic displays
US10319313B2 (en) 2007-05-21 2019-06-11 E Ink Corporation Methods for driving video electro-optic displays
US9199441B2 (en) 2007-06-28 2015-12-01 E Ink Corporation Processes for the production of electro-optic displays, and color filters for use therein
WO2009006248A1 (en) 2007-06-29 2009-01-08 E Ink Corporation Electro-optic displays, and materials and methods for production thereof
US8902153B2 (en) 2007-08-03 2014-12-02 E Ink Corporation Electro-optic displays, and processes for their production
US20090122389A1 (en) 2007-11-14 2009-05-14 E Ink Corporation Electro-optic assemblies, and adhesives and binders for use therein
WO2009117730A1 (en) 2008-03-21 2009-09-24 E Ink Corporation Electro-optic displays and color filters
ES2823736T3 (es) 2008-04-11 2021-05-10 E Ink Corp Procedimientos para excitar dispositivos de visualización electroópticos
JP5346078B2 (ja) * 2008-05-20 2013-11-20 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 熱および寸法安定性ポリイミドフィルム、ならびに、これに関する方法
EP2366270A4 (en) 2008-12-02 2013-04-10 Univ Arizona PROCESS FOR PREPARING A SOFT SUBSTRATE AND SOFT SUBSTRATE THUS OBTAINED
US9991311B2 (en) 2008-12-02 2018-06-05 Arizona Board Of Regents On Behalf Of Arizona State University Dual active layer semiconductor device and method of manufacturing the same
US9721825B2 (en) 2008-12-02 2017-08-01 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Method of providing a flexible semiconductor device and flexible semiconductor device thereof
US9601530B2 (en) 2008-12-02 2017-03-21 Arizona Board Of Regents, A Body Corporated Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Dual active layer semiconductor device and method of manufacturing the same
US20100159635A1 (en) * 2008-12-24 2010-06-24 Weyerhaeuser Company Method of patterning conductive layer and devices made thereby
US8457013B2 (en) 2009-01-13 2013-06-04 Metrologic Instruments, Inc. Wireless dual-function network device dynamically switching and reconfiguring from a wireless network router state of operation into a wireless network coordinator state of operation in a wireless communication network
US8234507B2 (en) 2009-01-13 2012-07-31 Metrologic Instruments, Inc. Electronic-ink display device employing a power switching mechanism automatically responsive to predefined states of device configuration
TWI484273B (zh) 2009-02-09 2015-05-11 E Ink Corp 電泳粒子
US8098418B2 (en) 2009-03-03 2012-01-17 E. Ink Corporation Electro-optic displays, and color filters for use therein
EP2436029A4 (en) 2009-05-29 2013-04-10 Univ Arizona PROCESS FOR PROVIDING A FLEXIBLE SEMICONDUCTOR DEVICE AT HIGH TEMPERATURES AND FLEXIBLE SEMICONDUCTOR DEVICE THEREFOR
CN104656977B (zh) 2009-10-28 2018-01-26 伊英克公司 具有触摸传感器的电光显示器
US8654436B1 (en) 2009-10-30 2014-02-18 E Ink Corporation Particles for use in electrophoretic displays
JP2013511600A (ja) * 2009-11-20 2013-04-04 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 薄膜トランジスタ組成物、およびそれに関連する方法
US8319299B2 (en) * 2009-11-20 2012-11-27 Auman Brian C Thin film transistor compositions, and methods relating thereto
KR101125567B1 (ko) * 2009-12-24 2012-03-22 삼성모바일디스플레이주식회사 고분자 기판 및 그 제조 방법과 상기 고분자 기판을 포함하는 표시 장치 및 그 제조 방법
US8446664B2 (en) 2010-04-02 2013-05-21 E Ink Corporation Electrophoretic media, and materials for use therein
JP2011233858A (ja) * 2010-04-09 2011-11-17 Dainippon Printing Co Ltd 薄膜素子用基板の製造方法、薄膜素子の製造方法、薄膜トランジスタの製造方法、薄膜素子、および薄膜トランジスタ
KR101793352B1 (ko) 2010-04-09 2017-11-02 이 잉크 코포레이션 전기광학 디스플레이의 구동 방법
WO2012021197A2 (en) 2010-05-21 2012-02-16 Arizona Board Of Regents, For And On Behalf Of Arizona State University Method of manufacturing electronic devices on both sides of a carrier substrate and electronic devices thereof
WO2012021196A2 (en) 2010-05-21 2012-02-16 Arizona Board Of Regents, For And On Behalf Of Arizona State University Method for manufacturing electronic devices and electronic devices thereof
TWI484275B (zh) 2010-05-21 2015-05-11 E Ink Corp 光電顯示器及其驅動方法、微型空腔電泳顯示器
KR101101943B1 (ko) * 2010-05-31 2012-01-02 한국철강 주식회사 태양전지용 기판의 열처리 방법
US8383469B2 (en) * 2011-01-07 2013-02-26 Eastman Kodak Company Producing transistor including reduced channel length
JP2012238687A (ja) * 2011-05-11 2012-12-06 Sony Corp 半導体パッケージ、半導体装置の製造方法、および固体撮像装置
US20130125910A1 (en) 2011-11-18 2013-05-23 Avon Products, Inc. Use of Electrophoretic Microcapsules in a Cosmetic Composition
US11467466B2 (en) 2012-04-20 2022-10-11 E Ink Corporation Illumination systems for reflective displays
WO2013159093A1 (en) 2012-04-20 2013-10-24 E Ink Corporation Illumination systems for reflective displays
WO2014106955A1 (ja) * 2013-01-07 2014-07-10 株式会社ニコン 組成物、積層体、積層体の製造方法、トランジスタおよびトランジスタの製造方法
WO2014110394A1 (en) 2013-01-10 2014-07-17 E Ink Corporation Electro-optic display with controlled electrochemical reactions
US9715155B1 (en) 2013-01-10 2017-07-25 E Ink Corporation Electrode structures for electro-optic displays
CN105917265B (zh) 2014-01-17 2019-01-15 伊英克公司 具有双相电极层的电光显示器
WO2017034645A2 (en) 2015-06-09 2017-03-02 ARIZONA BOARD OF REGENTS, a body corporate for THE STATE OF ARIZONA for and on behalf of ARIZONA STATE UNIVERSITY Method of providing an electronic device and electronic device thereof
WO2015156891A2 (en) 2014-01-23 2015-10-15 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Method of providing a flexible semiconductor device and flexible semiconductor device thereof
US10381224B2 (en) 2014-01-23 2019-08-13 Arizona Board Of Regents On Behalf Of Arizona State University Method of providing an electronic device and electronic device thereof
KR20160119195A (ko) 2014-02-07 2016-10-12 이 잉크 코포레이션 전기-광학 디스플레이 백플레인 구조들
US10317767B2 (en) 2014-02-07 2019-06-11 E Ink Corporation Electro-optic display backplane structure with drive components and pixel electrodes on opposed surfaces
US10446585B2 (en) 2014-03-17 2019-10-15 E Ink Corporation Multi-layer expanding electrode structures for backplane assemblies
EP3143641A4 (en) 2014-05-13 2018-01-17 Arizona Board of Regents, a Body Corporate of the State of Arizona acting for and on behalf of Arizona State University Method of providing an electronic device and electronic device thereof
ES2959493T3 (es) 2014-11-07 2024-02-26 E Ink Corp Baldosa electroóptica
US10446582B2 (en) 2014-12-22 2019-10-15 Arizona Board Of Regents On Behalf Of Arizona State University Method of providing an imaging system and imaging system thereof
US9741742B2 (en) 2014-12-22 2017-08-22 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Deformable electronic device and methods of providing and using deformable electronic device
US9835925B1 (en) 2015-01-08 2017-12-05 E Ink Corporation Electro-optic displays, and processes for the production thereof
US10475396B2 (en) 2015-02-04 2019-11-12 E Ink Corporation Electro-optic displays with reduced remnant voltage, and related apparatus and methods
US10997930B2 (en) 2015-05-27 2021-05-04 E Ink Corporation Methods and circuitry for driving display devices
EP3314328B1 (en) 2015-06-29 2021-03-03 E Ink Corporation Electro-optic display device and method of manufacturing thereof
WO2017184816A1 (en) 2016-04-22 2017-10-26 E Ink Corporation Foldable electro-optic display apparatus
US10527899B2 (en) 2016-05-31 2020-01-07 E Ink Corporation Backplanes for electro-optic displays
WO2018160546A1 (en) 2017-02-28 2018-09-07 E Ink Corporation Writeable electrophoretic displays including sensing circuits and styli configured to interact with sensing circuits
WO2018183240A1 (en) 2017-03-28 2018-10-04 E Ink Corporation Porous backplane for electro-optic display
TWI682261B (zh) 2017-05-19 2020-01-11 美商電子墨水股份有限公司 包含數位化及觸控感測的可折疊電光顯示器
US11404013B2 (en) 2017-05-30 2022-08-02 E Ink Corporation Electro-optic displays with resistors for discharging remnant charges
EP3631575A4 (en) 2017-05-30 2021-01-13 E Ink Corporation ELECTRO-OPTICAL INDICATORS
US10882042B2 (en) 2017-10-18 2021-01-05 E Ink Corporation Digital microfluidic devices including dual substrates with thin-film transistors and capacitive sensing
US10824042B1 (en) 2017-10-27 2020-11-03 E Ink Corporation Electro-optic display and composite materials having low thermal sensitivity for use therein
CN111226163B (zh) 2017-11-03 2021-10-22 伊英克公司 用于生产电光显示器的工艺
US11081066B2 (en) 2018-02-15 2021-08-03 E Ink Corporation Via placement for slim border electro-optic display backplanes with decreased capacitive coupling between t-wires and pixel electrodes
US11175561B1 (en) 2018-04-12 2021-11-16 E Ink Corporation Electrophoretic display media with network electrodes and methods of making and using the same
PL3834038T3 (pl) 2018-08-07 2024-04-02 E Ink Corporation Elastyczne kapsułkowane ośrodki elektrooptyczne
US11353759B2 (en) 2018-09-17 2022-06-07 Nuclera Nucleics Ltd. Backplanes with hexagonal and triangular electrodes
KR102577837B1 (ko) 2018-10-15 2023-09-12 이 잉크 코포레이션 디지털 미세유체 전달 디바이스
US11145262B2 (en) 2018-11-09 2021-10-12 E Ink Corporation Electro-optic displays
EP3894934A4 (en) 2018-12-13 2022-07-20 E Ink Corporation LIGHTING SYSTEMS FOR REFLECTIVE DISPLAYS
TWI728631B (zh) 2018-12-28 2021-05-21 美商電子墨水股份有限公司 電光顯示器
EP3903303A4 (en) 2018-12-30 2022-09-07 E Ink California, LLC ELECTRO-OPTICAL DISPLAYS
JP7407293B2 (ja) 2020-02-07 2023-12-28 イー インク コーポレイション 薄膜上部電極を伴う電気泳動ディスプレイ層
JP2023529136A (ja) 2020-06-03 2023-07-07 イー インク コーポレイション 非伝導性支持板を含む折り畳み可能電気泳動ディスプレイモジュール
TW202314665A (zh) 2021-08-18 2023-04-01 美商電子墨水股份有限公司 用於驅動電光顯示器的方法
WO2023164078A1 (en) 2022-02-25 2023-08-31 E Ink Corporation Electro-optic displays with edge seal components and methods of making the same
US11830449B2 (en) 2022-03-01 2023-11-28 E Ink Corporation Electro-optic displays
US20230350263A1 (en) 2022-04-27 2023-11-02 E Ink Corporation Electro-optic display stacks with segmented electrodes and methods of making the same

Family Cites Families (226)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE25363E (en) 1961-10-27 1963-04-02 Magnetic writing materials set
US3384565A (en) 1964-07-23 1968-05-21 Xerox Corp Process of photoelectrophoretic color imaging
JPS4915377B1 (zh) 1968-10-04 1974-04-15
US3892568A (en) 1969-04-23 1975-07-01 Matsushita Electric Ind Co Ltd Electrophoretic image reproduction process
US3612758A (en) 1969-10-03 1971-10-12 Xerox Corp Color display device
US3870517A (en) * 1969-10-18 1975-03-11 Matsushita Electric Ind Co Ltd Color image reproduction sheet employed in photoelectrophoretic imaging
US3668106A (en) 1970-04-09 1972-06-06 Matsushita Electric Ind Co Ltd Electrophoretic display device
US3767392A (en) 1970-04-15 1973-10-23 Matsushita Electric Ind Co Ltd Electrophoretic light image reproduction process
US3792308A (en) 1970-06-08 1974-02-12 Matsushita Electric Ind Co Ltd Electrophoretic display device of the luminescent type
US3670323A (en) 1970-12-14 1972-06-13 Zenith Radio Corp Image-display devices comprising particle light modulators with storage
JPS4917079B1 (zh) 1970-12-21 1974-04-26
US3850627A (en) 1971-01-06 1974-11-26 Xerox Corp Electrophoretic imaging method
JPS5121531B2 (zh) 1971-07-29 1976-07-03
US4273672A (en) 1971-08-23 1981-06-16 Champion International Corporation Microencapsulation process
GB1458045A (en) 1973-08-15 1976-12-08 Secr Defence Display systems
US4001140A (en) 1974-07-10 1977-01-04 Ncr Corporation Capsule manufacture
US4045327A (en) 1974-08-28 1977-08-30 Matsushita Electric Industrial Co., Ltd. Electrophoretic matrix panel
US4041481A (en) 1974-10-05 1977-08-09 Matsushita Electric Industrial Co., Ltd. Scanning apparatus for an electrophoretic matrix display panel
JPS584762B2 (ja) 1976-02-20 1983-01-27 株式会社日立製作所 パ−セント表示装置
FR2351191A1 (fr) 1976-05-11 1977-12-09 Thomson Csf Dispositif a electrophorese perfectionne
US4088395A (en) 1976-05-27 1978-05-09 American Cyanamid Company Paper counter-electrode for electrochromic devices
US4068927A (en) 1976-09-01 1978-01-17 North American Philips Corporation Electrophoresis display with buried lead lines
US4071430A (en) 1976-12-06 1978-01-31 North American Philips Corporation Electrophoretic image display having an improved switching time
US4203106A (en) 1977-11-23 1980-05-13 North American Philips Corporation X-Y addressable electrophoretic display device with control electrode
US4261653A (en) 1978-05-26 1981-04-14 The Bendix Corporation Light valve including dipolar particle construction and method of manufacture
US4324456A (en) 1979-08-02 1982-04-13 U.S. Philips Corporation Electrophoretic projection display systems
US4218302A (en) 1979-08-02 1980-08-19 U.S. Philips Corporation Electrophoretic display devices
JPS56104387A (en) 1980-01-22 1981-08-20 Citizen Watch Co Ltd Display unit
US4305807A (en) 1980-03-13 1981-12-15 Burroughs Corporation Electrophoretic display device using a liquid crystal as a threshold device
US4311361A (en) 1980-03-13 1982-01-19 Burroughs Corporation Electrophoretic display using a non-Newtonian fluid as a threshold device
JPS57181146A (en) 1981-04-30 1982-11-08 Hitachi Ltd Resin-sealed semiconductor device
JPS57188853A (en) * 1981-05-18 1982-11-19 Hitachi Ltd Plastic molded type semiconductor device
US4418346A (en) 1981-05-20 1983-11-29 Batchelder J Samuel Method and apparatus for providing a dielectrophoretic display of visual information
US4390403A (en) 1981-07-24 1983-06-28 Batchelder J Samuel Method and apparatus for dielectrophoretic manipulation of chemical species
US4450440A (en) 1981-12-24 1984-05-22 U.S. Philips Corporation Construction of an epid bar graph
US4522472A (en) 1982-02-19 1985-06-11 North American Philips Corporation Electrophoretic image display with reduced drives and leads
FR2527843B1 (fr) 1982-06-01 1986-01-24 Thomson Csf Electrode comprenant un film de polymere electrochrome pouvant servir dans un dispositif d'affichage ou de stockage d'energie
FR2527844B1 (fr) 1982-06-01 1986-01-24 Thomson Csf Dispositif electrochromique pouvant servir au stockage d'energie et systeme d'affichage electrochromique
US4439507A (en) 1982-09-21 1984-03-27 Xerox Corporation Layered photoresponsive imaging device with photogenerating pigments dispersed in a polyhydroxy ether composition
GB8328750D0 (en) 1983-10-27 1983-11-30 Philp R Contact-less electronic connectors
US4514583A (en) * 1983-11-07 1985-04-30 Energy Conversion Devices, Inc. Substrate for photovoltaic devices
JPS614020A (ja) 1984-06-18 1986-01-09 Nissha Printing Co Ltd マルチカラ−液晶表示装置
US4655897A (en) 1984-11-13 1987-04-07 Copytele, Inc. Electrophoretic display panels and associated methods
JPH0616506B2 (ja) 1984-12-26 1994-03-02 株式会社半導体エネルギー研究所 積層体の側周辺に選択的に被膜を形成する方法
US4648956A (en) 1984-12-31 1987-03-10 North American Philips Corporation Electrode configurations for an electrophoretic display device
US4741604A (en) 1985-02-01 1988-05-03 Kornfeld Cary D Electrode arrays for cellular displays
US4643528A (en) 1985-03-18 1987-02-17 Manchester R & D Partnership Encapsulated liquid crystal and filler material
US4598960A (en) 1985-04-29 1986-07-08 Copytele, Inc. Methods and apparatus for connecting closely spaced large conductor arrays employing multi-conductor carrier boards
JPS6258222A (ja) 1985-09-09 1987-03-13 Ricoh Co Ltd マトリクス型表示装置
US4686524A (en) 1985-11-04 1987-08-11 North American Philips Corporation Photosensitive electrophoretic displays
JPS6293974A (ja) * 1985-10-19 1987-04-30 Nitto Electric Ind Co Ltd 薄膜トランジスタアレイ
US4742345A (en) 1985-11-19 1988-05-03 Copytele, Inc. Electrophoretic display panel apparatus and methods therefor
JPS62163316A (ja) * 1986-01-14 1987-07-20 Canon Inc 半導体素子の製造方法
US4746917A (en) 1986-07-14 1988-05-24 Copytele, Inc. Method and apparatus for operating an electrophoretic display between a display and a non-display mode
US4850919A (en) 1986-09-11 1989-07-25 Copytele, Inc. Monolithic flat panel display apparatus and methods for fabrication thereof
JPH0682894B2 (ja) * 1986-09-27 1994-10-19 住友ベ−クライト株式会社 フレキシブルプリント回路用基板の製造方法
US5194852A (en) 1986-12-01 1993-03-16 More Edward S Electro-optic slate for direct entry and display and/or storage of hand-entered textual and graphic information
US4892607A (en) 1986-12-04 1990-01-09 Copytele, Inc. Chip mounting techniques for display apparatus
US5279694A (en) 1986-12-04 1994-01-18 Copytele, Inc. Chip mounting techniques for display apparatus
US5028841A (en) 1989-07-18 1991-07-02 Copytele, Inc. Chip mounting techniques for display apparatus
US4833464A (en) 1987-09-14 1989-05-23 Copytele, Inc. Electrophoretic information display (EPID) apparatus employing grey scale capability
JPH01207324A (ja) 1988-02-15 1989-08-21 Hitachi Chem Co Ltd 溶媒可溶なポリイミド
US4883561A (en) 1988-03-29 1989-11-28 Bell Communications Research, Inc. Lift-off and subsequent bonding of epitaxial films
US5070326A (en) 1988-04-13 1991-12-03 Ube Industries Ltd. Liquid crystal display device
US4947159A (en) 1988-04-18 1990-08-07 501 Copytele, Inc. Power supply apparatus capable of multi-mode operation for an electrophoretic display panel
DE3851223T2 (de) 1988-05-03 1994-12-22 Copytele Inc Monolithische Flachtafel-Anzeigevorrichtung.
US5731116A (en) 1989-05-17 1998-03-24 Dai Nippon Printing Co., Ltd. Electrostatic information recording medium and electrostatic information recording and reproducing method
JPH0731326B2 (ja) 1988-06-01 1995-04-10 シャープ株式会社 液晶表示装置
US5502889A (en) 1988-06-10 1996-04-02 Sheldahl, Inc. Method for electrically and mechanically connecting at least two conductive layers
US4931019A (en) 1988-09-01 1990-06-05 Pennwalt Corporation Electrostatic image display apparatus
US5119218A (en) 1988-09-28 1992-06-02 Ube Industries, Ltd. Liquid crystal display device having varistor elements
NL8802409A (nl) 1988-09-30 1990-04-17 Philips Nv Weergeefinrichting, steunplaat voorzien van diode en geschikt voor de weergeefinrichting en werkwijze ter vervaardiging van de steunplaat.
US4947157A (en) 1988-10-03 1990-08-07 501 Copytele, Inc. Apparatus and methods for pulsing the electrodes of an electrophoretic display for achieving faster display operation
JPH02131221A (ja) 1988-11-11 1990-05-21 Pioneer Electron Corp 光導電型液昌ライトバルブ
US5892244A (en) 1989-01-10 1999-04-06 Mitsubishi Denki Kabushiki Kaisha Field effect transistor including πconjugate polymer and liquid crystal display including the field effect transistor
US5041824A (en) 1989-03-02 1991-08-20 Copytele, Inc. Semitransparent electrophoretic information displays (EPID) employing mesh like electrodes
US5587264A (en) 1989-03-16 1996-12-24 Dai Nippon Printing Co. Ltd. Electrostatic information recording medium and electrostatic information recording and reproducing method
US5053763A (en) 1989-05-01 1991-10-01 Copytele, Inc. Dual anode flat panel electrophoretic display apparatus
US5302235A (en) 1989-05-01 1994-04-12 Copytele, Inc. Dual anode flat panel electrophoretic display apparatus
JPH03109526A (ja) 1989-06-20 1991-05-09 Japan Synthetic Rubber Co Ltd 液晶表示装置用アクティブマトリックス基板
US5066946A (en) 1989-07-03 1991-11-19 Copytele, Inc. Electrophoretic display panel with selective line erasure
US5220316A (en) 1989-07-03 1993-06-15 Benjamin Kazan Nonlinear resistor control circuit and use in liquid crystal displays
JPH0344621A (ja) 1989-07-12 1991-02-26 Alps Electric Co Ltd 表示方法及び装置並びにこれに用いる表示媒体
US5128785A (en) 1989-08-08 1992-07-07 Ube Industries, Ltd. Liquid crystal display device substantially free from cross-talk having varistor layers coupled to signal lines and picture electrodes
JP2813428B2 (ja) 1989-08-17 1998-10-22 三菱電機株式会社 電界効果トランジスタ及び該電界効果トランジスタを用いた液晶表示装置
US5254981A (en) 1989-09-15 1993-10-19 Copytele, Inc. Electrophoretic display employing gray scale capability utilizing area modulation
JP2712046B2 (ja) 1989-10-18 1998-02-10 宇部興産株式会社 液晶表示装置
CA2027440C (en) 1989-11-08 1995-07-04 Nicholas K. Sheridon Paper-like computer output display and scanning system therefor
US5128226A (en) 1989-11-13 1992-07-07 Eastman Kodak Company Electrophotographic element containing barrier layer
US5077157A (en) 1989-11-24 1991-12-31 Copytele, Inc. Methods of fabricating dual anode, flat panel electrophoretic displays
EP0443571A3 (en) 1990-02-23 1992-04-15 Ube Industries, Ltd. Liquid crystal display panel
JPH063528B2 (ja) * 1990-03-16 1994-01-12 富士ゼロックス株式会社 光変調表示素子及び表示方法
JPH049916A (ja) 1990-04-27 1992-01-14 Victor Co Of Japan Ltd 記録装置および記録ヘッド
JP2554769B2 (ja) 1990-05-16 1996-11-13 株式会社東芝 液晶表示装置
GB2244860A (en) 1990-06-04 1991-12-11 Philips Electronic Associated Fabricating mim type device array and display devices incorporating such arrays
US5206749A (en) 1990-12-31 1993-04-27 Kopin Corporation Liquid crystal display having essentially single crystal transistors pixels and driving circuits
US5250938A (en) 1990-12-19 1993-10-05 Copytele, Inc. Electrophoretic display panel having enhanced operation
US5362671A (en) 1990-12-31 1994-11-08 Kopin Corporation Method of fabricating single crystal silicon arrayed devices for display panels
US5223823A (en) 1991-03-11 1993-06-29 Copytele, Inc. Electrophoretic display panel with plural electrically independent anode elements
JP2603037B2 (ja) 1991-03-11 1997-04-23 コピイテル,インコーポレイテッド 電気的に独立した複数のアノード素子を有する電気泳動ディスプレイパネル
US5187609A (en) 1991-03-27 1993-02-16 Disanto Frank J Electrophoretic display panel with semiconductor coated elements
JPH04313266A (ja) * 1991-04-10 1992-11-05 Fuji Xerox Co Ltd 薄膜半導体装置
DE4113791A1 (de) * 1991-04-26 1992-10-29 Solvay Deutschland Verfahren zur abscheidung einer bor und stickstoff enthaltenden schicht
US5315312A (en) 1991-05-06 1994-05-24 Copytele, Inc. Electrophoretic display panel with tapered grid insulators and associated methods
US5375044A (en) 1991-05-13 1994-12-20 Guritz; Steven P. W. Multipurpose optical display for articulating surfaces
US5223115A (en) 1991-05-13 1993-06-29 Copytele, Inc. Electrophoretic display with single character erasure
JP3086718B2 (ja) 1991-06-24 2000-09-11 株式会社東芝 液晶表示素子
US5689282A (en) 1991-07-09 1997-11-18 U.S. Philips Corporation Display device with compensation for stray capacitance
JPH0519306A (ja) 1991-07-16 1993-01-29 Nippon Sheet Glass Co Ltd 全固体調光装置およびそれを用いた調光方法
GB9115402D0 (en) 1991-07-17 1991-09-04 Philips Electronic Associated Matrix display device and its method of operation
WO1993004411A1 (en) 1991-08-16 1993-03-04 Eastman Kodak Company Migration imaging with dyes or pigments to effect bleaching
US5216416A (en) 1991-08-19 1993-06-01 Copytele, Inc. Electrophoretic display panel with interleaved local anode
WO1993005425A1 (en) 1991-08-29 1993-03-18 Copytele, Inc. Electrophoretic display panel with internal mesh background screen
US5463492A (en) 1991-11-01 1995-10-31 Research Frontiers Incorporated Light modulating film of improved clarity for a light valve
US5463491A (en) 1991-11-01 1995-10-31 Research Frontiers Incorporated Light valve employing a film comprising an encapsulated liquid suspension, and method of making such film
US5247290A (en) 1991-11-21 1993-09-21 Copytele, Inc. Method of operation for reducing power, increasing life and improving performance of epids
US5266937A (en) 1991-11-25 1993-11-30 Copytele, Inc. Method for writing data to an electrophoretic display panel
US5174882A (en) 1991-11-25 1992-12-29 Copytele, Inc. Electrode structure for an electrophoretic display apparatus
EP0618715A4 (en) 1991-12-13 1996-12-18 Ace Denken Kk ELECTRONIC NOTEPAD.
JP3203736B2 (ja) * 1992-02-13 2001-08-27 株式会社日立製作所 液晶ドライバ用テープキャリアパッケージ及び液晶表示装置
US5293528A (en) 1992-02-25 1994-03-08 Copytele, Inc. Electrophoretic display panel and associated methods providing single pixel erase capability
US5412398A (en) 1992-02-25 1995-05-02 Copytele, Inc. Electrophoretic display panel and associated methods for blinking displayed characters
US5298833A (en) 1992-06-22 1994-03-29 Copytele, Inc. Black electrophoretic particles for an electrophoretic image display
US5270843A (en) 1992-08-31 1993-12-14 Jiansheng Wang Directly formed polymer dispersed liquid crystal light shutter displays
US5705424A (en) 1992-09-11 1998-01-06 Kopin Corporation Process of fabricating active matrix pixel electrodes
TW226478B (en) 1992-12-04 1994-07-11 Semiconductor Energy Res Co Ltd Semiconductor device and method for manufacturing the same
US5345251A (en) 1993-01-11 1994-09-06 Copytele, Inc. Electrophoretic display panel with interleaved cathode and anode
US5402145A (en) 1993-02-17 1995-03-28 Copytele, Inc. Electrophoretic display panel with arc driven individual pixels
TW241377B (zh) 1993-03-12 1995-02-21 Semiconductor Energy Res Co Ltd
JPH07152024A (ja) 1993-05-17 1995-06-16 Sharp Corp 液晶表示素子
EP0635748B1 (en) * 1993-07-23 2001-12-12 Sharp Kabushiki Kaisha Liquid crystal display apparatus and method for producing the same
TW259845B (zh) 1993-07-30 1995-10-11 Sharp Kk
US5477073A (en) 1993-08-20 1995-12-19 Casio Computer Co., Ltd. Thin film semiconductor device including a driver and a matrix circuit
JPH09502540A (ja) 1993-09-09 1997-03-11 コピイテル,インコーポレイテッド 選択的文字アドレス指定可能な電気泳動表示装置パネル
JPH09505900A (ja) 1993-10-01 1997-06-10 コピイテル,インコーポレイテッド 選択的キャラクタアドレス制御性を有する電気泳動式表示パネル
US5545291A (en) 1993-12-17 1996-08-13 The Regents Of The University Of California Method for fabricating self-assembling microstructures
US5904545A (en) 1993-12-17 1999-05-18 The Regents Of The University Of California Apparatus for fabricating self-assembling microstructures
US5383008A (en) 1993-12-29 1995-01-17 Xerox Corporation Liquid ink electrostatic image development system
US5508720A (en) 1994-02-02 1996-04-16 Copytele, Inc. Portable telecommunication device with removable electrophoretic display
WO1995026545A1 (en) 1994-03-18 1995-10-05 Philips Electronics N.V. Active matrix display device and method of driving such
US5744283A (en) 1994-04-12 1998-04-28 U.S. Philips Corporation Method of photolithographically metallizing at least the inside of holes arranged in accordance with a pattern in a plate of an electrically insulating material
EP0706678B1 (en) 1994-04-28 1999-02-24 Koninklijke Philips Electronics N.V. Method of photolithographically producing a copper pattern on a plate of an electrically insulating material
US5543589A (en) 1994-05-23 1996-08-06 International Business Machines Corporation Touchpad with dual sensor that simplifies scanning
CA2191084A1 (en) 1994-05-26 1995-12-07 Wei-Hsin Hou Fluorinated dielectric suspensions for electrophoretic image displays and related methods
US5623585A (en) 1994-07-15 1997-04-22 Eastman Kodak Company Method and apparatus for parallel processing of a document image
GB2292119B (en) 1994-08-10 1998-12-30 Chemitech Inc A process for producing a magnetic display sheet using microcapsules
US5709979A (en) 1994-10-21 1998-01-20 Sheldahl, Inc. Printed wiring board with photoimageable dielectric base substrate and method of manufacture therefor
EP0709713A3 (en) 1994-10-31 1997-03-26 Fujikura Ltd Electrically controlled color display method and device
CN1116623C (zh) 1994-11-07 2003-07-30 美国3M公司 标志制品及其制造方法
US5650872A (en) 1994-12-08 1997-07-22 Research Frontiers Incorporated Light valve containing ultrafine particles
US5745094A (en) * 1994-12-28 1998-04-28 International Business Machines Corporation Electrophoretic display
NO952545D0 (no) 1995-06-23 1995-06-23 Opticon As Fremgangsmåte til skriving av data i et optisk minne
NO301506B1 (no) 1995-06-23 1997-11-03 Opticom As Fremgangsmåte ved optisk datalagring samt databærende medium
NO303098B1 (no) 1995-06-23 1998-05-25 Opticom As Optisk datalagringsmedium med diffraktive optiske elementer og fremgangsmÕte til skriving og lesing av data i dette
NO302987B1 (no) 1995-07-18 1998-05-11 Opticom As Optisk logisk element og fremgangsmåter til henholdsvis dets preparering og optiske adressering, samt anvendelse derav i en optisk logisk innretning
US6710540B1 (en) * 1995-07-20 2004-03-23 E Ink Corporation Electrostatically-addressable electrophoretic display
US6120839A (en) 1995-07-20 2000-09-19 E Ink Corporation Electro-osmotic displays and materials for making the same
US6120588A (en) 1996-07-19 2000-09-19 E Ink Corporation Electronically addressable microencapsulated ink and display thereof
US6124851A (en) 1995-07-20 2000-09-26 E Ink Corporation Electronic book with multiple page displays
US6515649B1 (en) * 1995-07-20 2003-02-04 E Ink Corporation Suspended particle displays and materials for making the same
US6017584A (en) 1995-07-20 2000-01-25 E Ink Corporation Multi-color electrophoretic displays and materials for making the same
US6727881B1 (en) * 1995-07-20 2004-04-27 E Ink Corporation Encapsulated electrophoretic displays and methods and materials for making the same
US6118426A (en) 1995-07-20 2000-09-12 E Ink Corporation Transducers and indicators having printed displays
JP3444035B2 (ja) * 1995-08-01 2003-09-08 宇部興産株式会社 ポリイミドフィルム
FR2740318B1 (fr) 1995-10-31 1999-03-05 Moulinex Espana Sa Grille-pain electrique
US5650199A (en) 1995-11-22 1997-07-22 Aem, Inc. Method of making a multilayer electronic component with inter-layer conductor connection utilizing a conductive via forming ink
US5717514A (en) 1995-12-15 1998-02-10 Xerox Corporation Polychromal segmented balls for a twisting ball display
US5737115A (en) 1995-12-15 1998-04-07 Xerox Corporation Additive color tristate light valve twisting ball display
DE69614370T2 (de) 1995-12-30 2001-11-22 Casio Computer Co Ltd Anzeigervorrichtung für anzeigeoperation gemäss lichtsignal und steuerverfahren dafür
US5625199A (en) 1996-01-16 1997-04-29 Lucent Technologies Inc. Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors
US5786875A (en) 1996-03-15 1998-07-28 Brader; Lawrence Allen Thermal liquid crystal display using thermoelectric link
WO1997035298A2 (en) 1996-03-18 1997-09-25 Philips Electronics N.V. Display device
US5709976A (en) * 1996-06-03 1998-01-20 Xerox Corporation Coated papers
EP0811648B1 (en) * 1996-06-07 1999-12-22 Unitika Limited Polyimide precursor solution, process for the production thereof and process for producing a film or coating therefrom
JP3262514B2 (ja) 1996-06-07 2002-03-04 ユニチカ株式会社 ポリイミド前駆体溶液、それから得られるポリイミド塗膜又はポリイミドフィルム、及びそれらの製造方法
CN1182435C (zh) 1996-06-12 2004-12-29 奥普蒂科姆公司 光逻辑元件和光逻辑器件
GB9613065D0 (en) 1996-06-21 1996-08-28 Philips Electronics Nv Electronic device manufacture
US6055091A (en) * 1996-06-27 2000-04-25 Xerox Corporation Twisting-cylinder display
US6027958A (en) 1996-07-11 2000-02-22 Kopin Corporation Transferred flexible integrated circuit
US5969376A (en) 1996-08-23 1999-10-19 Lucent Technologies Inc. Organic thin film transistor having a phthalocyanine semiconductor layer
JP3082679B2 (ja) * 1996-08-29 2000-08-28 日本電気株式会社 薄膜トランジスタおよびその製造方法
JPH1093090A (ja) * 1996-09-13 1998-04-10 Toshiba Corp 半導体装置、半導体装置の製造方法、及び半導体装置用の有機樹脂基板
US5894367A (en) 1996-09-13 1999-04-13 Xerox Corporation Twisting cylinder display using multiple chromatic values
US5930026A (en) 1996-10-25 1999-07-27 Massachusetts Institute Of Technology Nonemissive displays and piezoelectric power supplies therefor
US5961804A (en) 1997-03-18 1999-10-05 Massachusetts Institute Of Technology Microencapsulated electrophoretic display
US5866284A (en) 1997-05-28 1999-02-02 Hewlett-Packard Company Print method and apparatus for re-writable medium
DE69839882D1 (de) * 1997-06-06 2008-09-25 Ibiden Co Ltd Mehrschichtige gedruckte leiterplatte und verfahren zu deren herstellung
NO972803D0 (no) 1997-06-17 1997-06-17 Opticom As Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte
US6839158B2 (en) * 1997-08-28 2005-01-04 E Ink Corporation Encapsulated electrophoretic displays having a monolayer of capsules and materials and methods for making the same
US6067185A (en) 1997-08-28 2000-05-23 E Ink Corporation Process for creating an encapsulated electrophoretic display
US6177921B1 (en) * 1997-08-28 2001-01-23 E Ink Corporation Printable electrode structures for displays
US6130774A (en) 1998-04-27 2000-10-10 E Ink Corporation Shutter mode microencapsulated electrophoretic display
US6497969B2 (en) * 1997-09-05 2002-12-24 Nessdisplay Co., Ltd. Electroluminescent device having an organic layer including polyimide
US5936259A (en) 1997-10-16 1999-08-10 Lucent Technologies Inc. Thin film transistor and organic semiconductor material thereof
JP3571198B2 (ja) * 1997-10-30 2004-09-29 株式会社半導体エネルギー研究所 表示装置の作製方法
GB9726094D0 (en) 1997-12-10 1998-02-11 Philips Electronics Nv Thin film transistors and electronic devices comprising such
EP0924551A1 (en) 1997-12-18 1999-06-23 The Technology Partnership Public Limited Company Method and apparatus for matrix addressing of an electrophoretic display device
JP2004506309A (ja) * 1997-12-31 2004-02-26 エルパック(ユーエスエー)、インコーポレイテッド モールドされた電子パッケージ、製作方法およびシールディング方法
JP3566524B2 (ja) 1998-01-14 2004-09-15 キヤノン株式会社 電気泳動表示装置
US6054071A (en) * 1998-01-28 2000-04-25 Xerox Corporation Poled electrets for gyricon-based electric-paper displays
SE513858C2 (sv) * 1998-03-06 2000-11-13 Ericsson Telefon Ab L M Flerskiktsstruktur samt förfarande för att tillverka flerskiktsmoduler
JP3691956B2 (ja) * 1998-03-18 2005-09-07 株式会社東芝 インターコネクタおよび液晶表示装置
US7075502B1 (en) * 1998-04-10 2006-07-11 E Ink Corporation Full color reflective display with multichromatic sub-pixels
DE69918308T2 (de) * 1998-04-10 2004-10-21 E Ink Corp Elektronische anzeige basierend auf organischen feldeffekt-transistoren
TW430827B (en) * 1998-05-22 2001-04-21 Advanced Refractory Tech Resistors with low temperature coefficient of resistance and methods of making
TW410478B (en) * 1998-05-29 2000-11-01 Lucent Technologies Inc Thin-film transistor monolithically integrated with an organic light-emitting diode
US6239896B1 (en) 1998-06-01 2001-05-29 Canon Kabushiki Kaisha Electrophotographic display device and driving method therefor
GB9812742D0 (en) * 1998-06-12 1998-08-12 Philips Electronics Nv Active matrix electroluminescent display devices
GB9812739D0 (en) * 1998-06-12 1998-08-12 Koninkl Philips Electronics Nv Active matrix electroluminescent display devices
CA2336101A1 (en) * 1998-07-08 2000-01-20 E Ink Corporation Method and apparatus for sensing the state of an electrophoretic display
US6184856B1 (en) * 1998-09-16 2001-02-06 International Business Machines Corporation Transmissive electrophoretic display with laterally adjacent color cells
EP1118039B1 (en) * 1998-10-07 2003-02-05 E Ink Corporation Illumination system for nonemissive electronic displays
US6506438B2 (en) * 1998-12-15 2003-01-14 E Ink Corporation Method for printing of transistor arrays on plastic substrates
US6724519B1 (en) * 1998-12-21 2004-04-20 E-Ink Corporation Protective electrodes for electrophoretic displays
EP1737054B1 (en) 1999-01-29 2012-04-11 Seiko Epson Corporation Piezoelectric transducer
JP2002536695A (ja) * 1999-02-05 2002-10-29 エイリアン・テクノロジイ・コーポレーション アセンブリを形成するための装置および方法
JP4582914B2 (ja) * 1999-04-06 2010-11-17 イー インク コーポレイション カプセルベースの起電ディスプレイにおける使用のための液滴を作製するための方法
US6842657B1 (en) * 1999-04-09 2005-01-11 E Ink Corporation Reactive formation of dielectric layers and protection of organic layers in organic semiconductor device fabrication
US6504524B1 (en) * 2000-03-08 2003-01-07 E Ink Corporation Addressing methods for displays having zero time-average field
US6531997B1 (en) * 1999-04-30 2003-03-11 E Ink Corporation Methods for addressing electrophoretic displays
US6693620B1 (en) * 1999-05-03 2004-02-17 E Ink Corporation Threshold addressing of electrophoretic displays
US6323034B1 (en) * 1999-08-12 2001-11-27 Industrial Technology Research Institute Amorphous TFT process
US6545291B1 (en) * 1999-08-31 2003-04-08 E Ink Corporation Transistor design for use in the construction of an electronically driven display
EP1224505B1 (en) * 1999-10-11 2005-01-12 University College Dublin Electrochromic device
US6197663B1 (en) * 1999-12-07 2001-03-06 Lucent Technologies Inc. Process for fabricating integrated circuit devices having thin film transistors
US6672921B1 (en) * 2000-03-03 2004-01-06 Sipix Imaging, Inc. Manufacturing process for electrophoretic display

Also Published As

Publication number Publication date
CN1441967A (zh) 2003-09-10
KR100767233B1 (ko) 2007-10-17
JP2003531487A (ja) 2003-10-21
AU2001253575A1 (en) 2001-10-30
DE60139463D1 (de) 2009-09-17
WO2001080287A3 (en) 2002-05-23
WO2001080287A2 (en) 2001-10-25
US20020019081A1 (en) 2002-02-14
ATE438927T1 (de) 2009-08-15
US20050067656A1 (en) 2005-03-31
US7365394B2 (en) 2008-04-29
US6825068B2 (en) 2004-11-30
EP1275156B1 (en) 2009-08-05
KR20020089479A (ko) 2002-11-29
EP1275156A2 (en) 2003-01-15

Similar Documents

Publication Publication Date Title
CN1237623C (zh) 在衬底上成形晶体管的方法和含聚亚苯基聚酰亚胺的衬底
US7763957B2 (en) Active matrix type display device and method of manufacturing the same
Liu et al. Polycrystalline silicon thin film transistors on Corning 7059 glass substrates using short time, low‐temperature processing
US7279400B2 (en) Method of fabricating single-layer and multi-layer single crystalline silicon and silicon devices on plastic using sacrificial glass
CN100397556C (zh) 半导体膜、半导体器件和用于制造半导体膜、半导体器件的方法
JP3553410B2 (ja) 薄膜トランジスタのための多段階cvd法
JPH10270711A (ja) 薄膜トランジスタ
CN1805154A (zh) 防止基板变形
US20060284179A1 (en) Silicon thin film transistor and method of manufacturing the same
US7081931B2 (en) Liquid crystal display having aluminum wiring
US20090200553A1 (en) High temperature thin film transistor on soda lime glass
CN106783582A (zh) 多晶硅薄膜处理方法、薄膜晶体管、阵列基板及显示面板
EP0782178B1 (en) Solid phase epitaxial crystallization of amorphous silicon films on insulating substrates
CN1595613A (zh) 一种具有金属上扩散层的金属诱导多晶硅薄膜制造方法
JPH04184424A (ja) 表示装置とその製法
JPH1152413A (ja) 液晶表示素子及びその製造方法
US20040157382A1 (en) Diffusion barrier multi-layer structure for thin film transistor liquid crystal displays and process for fabricating thereof
JP2003068755A (ja) 薄膜トランジスタ及びその製造方法
KR100624430B1 (ko) 다결정 실리콘 제조방법
JP3149035B2 (ja) 薄膜トランジスタおよびその保護絶縁膜の成膜方法
US7745314B2 (en) Method of degassing thin layer and method of manufacturing silicon thin film
CN101064316A (zh) 一种平坦化有源驱动tft矩阵结构及其制造方法
JPH0653505A (ja) 逆スタッガ型薄膜トランジスタ及びその製造方法
JPH01293318A (ja) 液晶表示パネル用電極基板
JPS6237966A (ja) 半導体素子の製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060118

Termination date: 20200417

CF01 Termination of patent right due to non-payment of annual fee