CN1139293A - 有机器件的钝化 - Google Patents

有机器件的钝化 Download PDF

Info

Publication number
CN1139293A
CN1139293A CN96105465A CN96105465A CN1139293A CN 1139293 A CN1139293 A CN 1139293A CN 96105465 A CN96105465 A CN 96105465A CN 96105465 A CN96105465 A CN 96105465A CN 1139293 A CN1139293 A CN 1139293A
Authority
CN
China
Prior art keywords
organic assembly
passivation
metal shell
insulating material
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN96105465A
Other languages
English (en)
Other versions
CN1092396C (zh
Inventor
T·B·哈维三世
F·苏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Universal Display Corp
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of CN1139293A publication Critical patent/CN1139293A/zh
Application granted granted Critical
Publication of CN1092396C publication Critical patent/CN1092396C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8423—Metallic sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making

Abstract

本发明涉及一种在支持基片上钝化有机器件的方法，该方法包括把一层低温沉积的绝缘薄膜覆盖在有机器件上，并且在该绝缘材料上密闭地封接一层无机材料层从而实质性地密封该有机器件。在一个典型的实施例中，该绝缘层是二氧化硅(SiO2)，该无机材料层是一个金属外壳。

Description

有机器件的钝化
本发明是关于有机器件的并且专门关于被钝化的有机器件和钝化(passivation)的方法。
有机器件，尤其是有机光发射二极管(LEDs)及类似的有机器件，通常在阴极上使用一层活性金属来保证效率高的电子注入电极和低的工作电压。但是。活性金属受氧和湿度的影响，特别是在工作期间。金属的氧化限制了器件的寿命。通常需要密封来实现长期稳定性和长的工作寿命。使用了若干类型的密封，其中最常用的是例如金属等诸如此类的无机材料。
在有机器件的制造和钝化中的另一个问题是有机器件的有机层不能承受很高的温度(通常高于大约300℃)。在很多情况下，甚至接近有机层的临界(critical)温度，尤其是如果升高的温度被保持相对来说较长的时间，可以使有机材料退化并降低可靠性和/或工作寿命。
近来一种密封有机器件的工艺是用例如陶瓷或金属的无机材料来覆盖它们，从而实现密封。可是，有机器件对在陶瓷和金属的沉积中通常所需要的高温非常敏感。因此，为了符合低温标准，通常必须使用PECVD方法来沉积陶瓷或金属材料。使用这一密封方法的主要问题是在PECVD沉积的期间存在着对有机器件的辐射损坏的较大可能性。
因此，非常希望设计一种相对来说便宜而方便的密封有机器件的方法。
本发明的目的是提供一种新的和改进了的钝化有机器件的方法。
本发明的目的还在于提供一种新的和改进了的在较低的温度下钝化有机器件的方法。
本发明的另一个目的是提供一种新的和改进了的相对来说方便而又花钱不多就能实现的钝化有机器件的方法。
通过钝化被安置在支持基片上的有机器件部分地解决了以上问题及其它一些问题并实现了以上目的及其它一些目的，该钝化包括的步骤是：把一层低温沉积的绝缘(dielectric)薄膜覆盖在有机器件上，并且密封地在该绝缘材料上接合一层无机材料从而实质性地密封该有机器件。
在一个典型的实施例中，该绝缘层是SiO2而无机(材料)层是金属外壳。在一些实施例中，可以在金属外壳内配置吸气剂材料来除出剩余的氧或湿气并且除去渗入的少量(氧或湿气)，从而进一步增加了该有机器件的寿命。
参照附图，其中对于所有不同的外形(view)，同样的符号表示同样的部件：
图1是有机光发射二极管的简化的剖面图；并且
图2是说明根据本发明的钝化方法的一个有机光发射二极管阵列的简化的剖面图。
具体地，参照图1，在这个具体的实施例中，基片10被表示出，它是某种光学洁净(clear)材料，例如是玻璃、石英、透明半导体材料或诸如此类的材料。一个典型的有机光发射二极管12(LED)被安置在基片10上，通常是使用制造有机光发射二极管(LEDs)的诸方法中的任一种方法来直接在基片10上制造LED12。
在这个具体的例子中，LED12包括沉积在基片10的上表面上的一层透明导体材料14，该透明导体材料例如是铟—锡—氧(Indi-um-tin-oxide，即ITO)或诸如此类的材料。可以是任何方便的方法在导体层14的上表面沉积一层有机电致发光层16。有机电致发光层16相当于LED12的有源有机层并且可以包括从一层到几层的子层，如本技术领域的内行人所熟悉的那样。一个金属接触面18处于有机电致发光层16的上表面来用作LDE12的阴极。接触面18至少包括一层活性的、低功函数(work function)的金属的薄层，该金属如上所述易受在环境大气中的氧和湿度的影响，因此，必须被钝化来达到可靠性和合理水平的长的工作寿命。
在图2中表示了根据本发明的钝化一个或多个LDEs的方法。在图2中多个LEDs被表示成一个有机LED阵列20的形式。如本技术领域的内行人所知，例如是ITO的一层透明导体材料22处于基片23的上表面，该基片也是透明的并且可以是例如玻璃或诸如此类的材料。层22被排列成行并且在层22的行上形成多个LEDs。这些LEDs中的每一个的上面的金属接触部分24被连接到列，于是，阵列20中的LEDs的每一个被单独地寻址。
在这个具体实施例的第一步，用低温沉积的绝缘材料薄膜25覆盖或包封阵列20。低温沉积的绝缘材料薄膜的一个典型例子是二氧化硅(SiO2)，它是通过在处于大约10-4Torr的包含氧(O2)的气体环境中蒸发一氧化硅(SiO)而被沉积的。一般来说，薄膜25的厚度依赖于被使用的LEDs的类型和有源层的厚度。但是，如果标准的LEDs被制造，一层具有在大约500埃(A)到1500埃的范围内的厚度的该薄膜对于完成所需要的功能是足够厚的。薄膜25为以下步骤提供了一些附加的保护。
然后，在薄膜上的阵列20上密封地接上金层外壳30或类似的不可渗透的罩(例如金属箔，诸如金属化聚酯之类的金属化聚合物薄膜)。在一个优选的实施例中，围绕阵列20的薄膜25的上表面上有一个金属图形(没有示出)并且于阵列20之上在该金属图形上配置有金属外壳30，这时该结构仍处于薄膜沉积步骤的10-4Torr的真空状态下。使用低温焊料密封在32处把金属外壳30密封在阵列20上。可以用于这一用途的一种典型的低温焊料是以铟为基本组分的焊料(indium based solder)。在某些具体的应用中，如果使用具有足够低的熔化温度的焊料，可以简单地将金属外壳30直接密封在基底23的表面处。为了此处公开的目的，应该注意能够得到具有70℃-117℃的熔化点的铟焊料。
如果要求或希望附加的保护，可以在金属外壳30的内部形成一层吸气剂(getter)材料的薄膜34，例如，该薄膜可以作为金属外壳30的衬层(lining)或作为在薄膜25的上表面之上的一层材料。通常地，使用例如是锂(Li)或镁(Mg)的低功函数金属作为吸气剂材料(a gettering material)来吸收在金属外壳30中的被吸收的和剩余的气体或密封之后渗入金属外壳30的少量气体。
通过把吸气剂薄膜34安装在金属外壳30之内，少量的渗入可以被吸收，使得在某些应用中可以用某种有机粘合剂将金属外壳30密封到薄膜25或诸如此类的薄膜之上。一般地，有机粘合剂不要求升高的温度，如果金属外壳30适当地被安装在薄膜25上，有机粘合剂密封层32的厚度为最小。
因此，依赖于应用和需要保护的量，可以把金属外壳30、绝缘材料薄膜25、吸气剂薄膜34和在密封处32的不同类型的密封材料的各种组合便利而又常规地包括在制造工艺中。应该注意，薄膜25与阵列20相比通常具有更低的渗透率并且金属外壳30基本上是不渗透的，因此，与用一层无机材料进行简单的包封的已有结构相比，根据本发明的整体结构具有更好的抗渗透能力。而且，因为薄膜25是在低温下被沉积的并且金属外壳30是在低温下被密封的，阵列20不会被损坏，也不会被降低性能，否则由于包封过程或成品的热循环会受到损坏。另外，与已有技术的方法与器件相比，本发明包括更便于制造的工艺。
我们已经表示和描述了本发明的具体实施例，其他的修改和改进对于本技术领域的内行人来说是显然的。因此，我们要求得到理解，本发明不局限于被表示了的特殊形式，在所附的权利要求中，我们要求包括不背离本发明的主旨与范围的所有修改。

Claims (10)

1.钝化有机器件的一种方法，特征在于有以下步骤：
提供了在支持基片上的有机器件；
把一层低温沉积的绝缘(dielectric)材料薄膜覆盖在该有机器件上；
在绝缘材料上密封地接合一层无机层从而实质性地密封该有机器件。
2.如权利要求1所述的钝化有机器件的方法，特征在于：用低温绝缘材料来覆盖该有机器件的步骤的进一步的特征在于通过在低压氧的环境中蒸发该绝缘材料来产生在该有机器件上的薄膜。
3.如权利要求2所述的钝化有机器件的方法，特征在于：蒸发绝缘材料的步骤的进一步的特征在于通过在低压氧的环境中蒸发一氧化硅(silicon monoxide)来产生在该有机器件上的一层二氧化硅(silicon dioxide)的薄膜。
4.如权利要求3所述的钝化有机器件的方法，特征在于在低压氧环境下的蒸发氧化硅(silicon oxide)来产生二氧化硅(sili-con dioxide)薄膜的步骤的进一步的特征是在大约10-4 Torr的含氧的气体环境下蒸发氧化硅。
5.根据权利要求1所述的钝化有机器件的方法，特征在于在绝缘材料上密闭封接无机材料层的步骤的进一步的特征是配给金属外壳并且在绝缘材料薄膜上密闭封接该金属外壳，以此来实质性地密封有机器件。
6.根据权利要求5所述的钝化有机器件的方法，特征在于在绝缘材料薄膜上密闭封接金属外壳的步骤的进一步的特征是在把有机器件保持在大约10-4Torr的气体环境下的同时将该金属外壳固定在绝缘材料薄膜上。
7.根据权利要求5所述的钝化有机器件的方法，特征在于密闭封接金属外壳的步骤的进一步的特征是使用低温焊料进行密封。
8.根据权利要求7所述的钝化有机器件的方法，特征在于使用低温焊料进行密封来密闭封接金属外壳的步骤的进一步的特征是使用以铟(indium)为基本成分的焊料。
9.如权利要求5所述的钝化有机器件的方法，进一步的特征在于在绝缘材料薄膜上密闭封接金属外壳之前沉积一层吸气剂材料，从而将吸气剂材料的层配置在金属外壳之内。
10.根据权利要求9所述的钝化有机器件的方法，特征在于在绝缘材料薄膜上密闭封接金属外壳的步骤的进一步的特征是使用有机粘合剂。
CN96105465A 1995-05-02 1996-04-25 钝化有机发光二极管的方法 Expired - Fee Related CN1092396C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US433909 1982-10-12
US433,909 1995-05-02
US08/433,909 US5771562A (en) 1995-05-02 1995-05-02 Passivation of organic devices

Publications (2)

Publication Number Publication Date
CN1139293A true CN1139293A (zh) 1997-01-01
CN1092396C CN1092396C (zh) 2002-10-09

Family

ID=23722026

Family Applications (1)

Application Number Title Priority Date Filing Date
CN96105465A Expired - Fee Related CN1092396C (zh) 1995-05-02 1996-04-25 钝化有机发光二极管的方法

Country Status (7)

Country Link
US (1) US5771562A (zh)
EP (1) EP0741419B1 (zh)
JP (1) JPH08306955A (zh)
KR (1) KR100372967B1 (zh)
CN (1) CN1092396C (zh)
DE (1) DE69630162T2 (zh)
TW (1) TW409422B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100340002C (zh) * 2000-09-08 2007-09-26 株式会社半导体能源研究所 发光器件及其制造方法和薄膜形成装置
US7683535B2 (en) 2000-02-03 2010-03-23 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method of manufacturing the same

Families Citing this family (189)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100479000B1 (ko) * 1996-05-15 2005-08-01 세이코 엡슨 가부시키가이샤 박막디바이스,액정패널및전자기기및박막디바이스의제조방법
JPH11510647A (ja) * 1996-05-28 1999-09-14 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 有機エレクトロルミネッセンスデバイス
WO1998012689A1 (fr) * 1996-09-19 1998-03-26 Seiko Epson Corporation Ecran matriciel et son procede de fabrication
JP3899566B2 (ja) 1996-11-25 2007-03-28 セイコーエプソン株式会社 有機ｅｌ表示装置の製造方法
US5952778A (en) * 1997-03-18 1999-09-14 International Business Machines Corporation Encapsulated organic light emitting device
JP3290375B2 (ja) * 1997-05-12 2002-06-10 松下電器産業株式会社 有機電界発光素子
US6198220B1 (en) * 1997-07-11 2001-03-06 Emagin Corporation Sealing structure for organic light emitting devices
EP1021255A1 (en) * 1997-07-11 2000-07-26 Fed Corporation Sealing structure for organic light emitting devices
JPH1140346A (ja) * 1997-07-22 1999-02-12 Pioneer Electron Corp 有機エレクトロルミネセンス表示装置
DE19735760A1 (de) * 1997-08-18 1999-02-25 Zeiss Carl Fa Lötverfahren für optische Materialien an Metallfassungen und gefaßte Baugruppen
US5990498A (en) * 1997-09-16 1999-11-23 Polaroid Corporation Light-emitting diode having uniform irradiance distribution
US6370019B1 (en) * 1998-02-17 2002-04-09 Sarnoff Corporation Sealing of large area display structures
US6080031A (en) * 1998-09-02 2000-06-27 Motorola, Inc. Methods of encapsulating electroluminescent apparatus
US7126161B2 (en) 1998-10-13 2006-10-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having El layer and sealing material
US6274887B1 (en) 1998-11-02 2001-08-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method therefor
AU1339700A (en) * 1998-11-02 2000-05-22 Presstek, Inc. Transparent conductive oxides for plastic flat panel displays
US7141821B1 (en) * 1998-11-10 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an impurity gradient in the impurity regions and method of manufacture
US7022556B1 (en) 1998-11-11 2006-04-04 Semiconductor Energy Laboratory Co., Ltd. Exposure device, exposure method and method of manufacturing semiconductor device
US6277679B1 (en) 1998-11-25 2001-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing thin film transistor
US6268695B1 (en) 1998-12-16 2001-07-31 Battelle Memorial Institute Environmental barrier material for organic light emitting device and method of making
TW439308B (en) 1998-12-16 2001-06-07 Battelle Memorial Institute Environmental barrier material for organic light emitting device and method of making
EP1145336A1 (en) * 1998-12-17 2001-10-17 Cambridge Display Technology Limited Organic light-emitting devices
US7697052B1 (en) 1999-02-17 2010-04-13 Semiconductor Energy Laboratory Co., Ltd. Electronic view finder utilizing an organic electroluminescence display
JP2000294369A (ja) * 1999-04-05 2000-10-20 Chisso Corp 有機ｅｌ素子
US6680487B1 (en) 1999-05-14 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor comprising a TFT provided on a substrate having an insulating surface and method of fabricating the same
US7091605B2 (en) * 2001-09-21 2006-08-15 Eastman Kodak Company Highly moisture-sensitive electronic device element and method for fabrication
TW527735B (en) * 1999-06-04 2003-04-11 Semiconductor Energy Lab Electro-optical device
US7288420B1 (en) 1999-06-04 2007-10-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an electro-optical device
US8853696B1 (en) * 1999-06-04 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
TW516244B (en) 1999-09-17 2003-01-01 Semiconductor Energy Lab EL display device and method for manufacturing the same
JP3942770B2 (ja) * 1999-09-22 2007-07-11 株式会社半導体エネルギー研究所 Ｅｌ表示装置及び電子装置
TW480722B (en) 1999-10-12 2002-03-21 Semiconductor Energy Lab Manufacturing method of electro-optical device
US6623861B2 (en) 2001-04-16 2003-09-23 Battelle Memorial Institute Multilayer plastic substrates
US6548912B1 (en) 1999-10-25 2003-04-15 Battelle Memorial Institute Semicoductor passivation using barrier coatings
US6413645B1 (en) * 2000-04-20 2002-07-02 Battelle Memorial Institute Ultrabarrier substrates
US6866901B2 (en) 1999-10-25 2005-03-15 Vitex Systems, Inc. Method for edge sealing barrier films
US20100330748A1 (en) 1999-10-25 2010-12-30 Xi Chu Method of encapsulating an environmentally sensitive device
US7198832B2 (en) * 1999-10-25 2007-04-03 Vitex Systems, Inc. Method for edge sealing barrier films
US6573652B1 (en) 1999-10-25 2003-06-03 Battelle Memorial Institute Encapsulated display devices
US6587086B1 (en) 1999-10-26 2003-07-01 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
KR100720066B1 (ko) * 1999-11-09 2007-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치 제작방법
US6646287B1 (en) * 1999-11-19 2003-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with tapered gate and insulating film
US20010053559A1 (en) * 2000-01-25 2001-12-20 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating display device
US6492026B1 (en) 2000-04-20 2002-12-10 Battelle Memorial Institute Smoothing and barrier layers on high Tg substrates
US6465953B1 (en) * 2000-06-12 2002-10-15 General Electric Company Plastic substrates with improved barrier properties for devices sensitive to water and/or oxygen, such as organic electroluminescent devices
AU2001283424A1 (en) * 2000-08-17 2002-02-25 Power Signal Technologies, Inc. Glass-to-metal hermetically led array in a sealed solid state light
US6605826B2 (en) * 2000-08-18 2003-08-12 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and display device
EP1309994A2 (de) * 2000-08-18 2003-05-14 Siemens Aktiengesellschaft Verkapseltes organisch-elektronisches bauteil, verfahren zu seiner herstellung und seine verwendung
DE10044841B4 (de) 2000-09-11 2006-11-30 Osram Opto Semiconductors Gmbh Plasmaverkapselung für elektronische und mikroelektronische Bauelemente wie OLEDs sowie Verfahren zu dessen Herstellung
US6924594B2 (en) * 2000-10-03 2005-08-02 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US6537688B2 (en) 2000-12-01 2003-03-25 Universal Display Corporation Adhesive sealed organic optoelectronic structures
US6614057B2 (en) 2001-02-07 2003-09-02 Universal Display Corporation Sealed organic optoelectronic structures
US7222981B2 (en) * 2001-02-15 2007-05-29 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device
US6576351B2 (en) 2001-02-16 2003-06-10 Universal Display Corporation Barrier region for optoelectronic devices
US6822391B2 (en) * 2001-02-21 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, electronic equipment, and method of manufacturing thereof
US6881447B2 (en) 2002-04-04 2005-04-19 Dielectric Systems, Inc. Chemically and electrically stabilized polymer films
US20050274322A1 (en) * 2001-02-26 2005-12-15 Lee Chung J Reactor for producing reactive intermediates for low dielectric constant polymer thin films
US6624568B2 (en) 2001-03-28 2003-09-23 Universal Display Corporation Multilayer barrier region containing moisture- and oxygen-absorbing material for optoelectronic devices
US6664137B2 (en) * 2001-03-29 2003-12-16 Universal Display Corporation Methods and structures for reducing lateral diffusion through cooperative barrier layers
US6706316B2 (en) * 2001-05-08 2004-03-16 Eastman Kodak Company Ultrasonically sealing the cover plate to provide a hermetic enclosure for OLED displays
JP4041660B2 (ja) * 2001-05-31 2008-01-30 ユーディナデバイス株式会社 半導体装置及びその製造方法
US6692326B2 (en) 2001-06-16 2004-02-17 Cld, Inc. Method of making organic electroluminescent display
TWI264244B (en) * 2001-06-18 2006-10-11 Semiconductor Energy Lab Light emitting device and method of fabricating the same
TW548860B (en) * 2001-06-20 2003-08-21 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
US7211828B2 (en) 2001-06-20 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic apparatus
TW546857B (en) * 2001-07-03 2003-08-11 Semiconductor Energy Lab Light-emitting device, method of manufacturing a light-emitting device, and electronic equipment
US6664730B2 (en) 2001-07-09 2003-12-16 Universal Display Corporation Electrode structure of el device
US7469558B2 (en) * 2001-07-10 2008-12-30 Springworks, Llc As-deposited planar optical waveguides with low scattering loss and methods for their manufacture
US8415208B2 (en) 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
US6888307B2 (en) * 2001-08-21 2005-05-03 Universal Display Corporation Patterned oxygen and moisture absorber for organic optoelectronic device structures
TW558743B (en) 2001-08-22 2003-10-21 Semiconductor Energy Lab Peeling method and method of manufacturing semiconductor device
US6470594B1 (en) 2001-09-21 2002-10-29 Eastman Kodak Company Highly moisture-sensitive electronic device element and method for fabrication utilizing vent holes or gaps
US6590157B2 (en) 2001-09-21 2003-07-08 Eastman Kodak Company Sealing structure for highly moisture-sensitive electronic device element and method for fabrication
US7026758B2 (en) * 2001-09-28 2006-04-11 Osram Opto Semiconductors Gmbh Reinforcement of glass substrates in flexible devices
JP4166455B2 (ja) * 2001-10-01 2008-10-15 株式会社半導体エネルギー研究所 偏光フィルム及び発光装置
JP4019690B2 (ja) * 2001-11-02 2007-12-12 セイコーエプソン株式会社 電気光学装置及びその製造方法並びに電子機器
US7404877B2 (en) * 2001-11-09 2008-07-29 Springworks, Llc Low temperature zirconia based thermal barrier layer by PVD
US7050835B2 (en) 2001-12-12 2006-05-23 Universal Display Corporation Intelligent multi-media display communication system
CN100483782C (zh) * 2001-12-13 2009-04-29 皇家飞利浦电子股份有限公司 用于显示装置的密封结构
JP2003224245A (ja) * 2002-01-31 2003-08-08 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP2003232897A (ja) * 2002-02-13 2003-08-22 Konica Corp 放射線画像変換パネルの製造方法
US6884327B2 (en) 2002-03-16 2005-04-26 Tao Pan Mode size converter for a planar waveguide
US7378356B2 (en) * 2002-03-16 2008-05-27 Springworks, Llc Biased pulse DC reactive sputtering of oxide films
US20030175142A1 (en) * 2002-03-16 2003-09-18 Vassiliki Milonopoulou Rare-earth pre-alloyed PVD targets for dielectric planar applications
US20050174045A1 (en) * 2002-04-04 2005-08-11 Dielectric Systems, Inc. Organic light-emitting device display having a plurality of passive polymer layers
US20070216300A1 (en) * 2002-04-04 2007-09-20 International Display Systems, Inc. Organic opto-electronic device with environmentally protective barrier
US20050158454A1 (en) * 2002-04-04 2005-07-21 Dielectric Systems, Inc. Method and system for forming an organic light-emitting device display having a plurality of passive polymer layers
US8808457B2 (en) 2002-04-15 2014-08-19 Samsung Display Co., Ltd. Apparatus for depositing a multilayer coating on discrete sheets
US8900366B2 (en) 2002-04-15 2014-12-02 Samsung Display Co., Ltd. Apparatus for depositing a multilayer coating on discrete sheets
US7164155B2 (en) * 2002-05-15 2007-01-16 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7230271B2 (en) 2002-06-11 2007-06-12 Semiconductor Energy Laboratory Co., Ltd. Light emitting device comprising film having hygroscopic property and transparency and manufacturing method thereof
DE10236855B4 (de) * 2002-08-07 2006-03-16 Samsung SDI Co., Ltd., Suwon Gehäuseeinheit zur Verkapselung von Bauelementen und Verfahren zu deren Herstellung
US8236443B2 (en) 2002-08-09 2012-08-07 Infinite Power Solutions, Inc. Metal film encapsulation
US8021778B2 (en) 2002-08-09 2011-09-20 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US8535396B2 (en) 2002-08-09 2013-09-17 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US8394522B2 (en) 2002-08-09 2013-03-12 Infinite Power Solutions, Inc. Robust metal film encapsulation
US8404376B2 (en) 2002-08-09 2013-03-26 Infinite Power Solutions, Inc. Metal film encapsulation
US20070264564A1 (en) 2006-03-16 2007-11-15 Infinite Power Solutions, Inc. Thin film battery on an integrated circuit or circuit board and method thereof
US8431264B2 (en) 2002-08-09 2013-04-30 Infinite Power Solutions, Inc. Hybrid thin-film battery
US8445130B2 (en) 2002-08-09 2013-05-21 Infinite Power Solutions, Inc. Hybrid thin-film battery
US6818291B2 (en) * 2002-08-17 2004-11-16 3M Innovative Properties Company Durable transparent EMI shielding film
US7215473B2 (en) * 2002-08-17 2007-05-08 3M Innovative Properties Company Enhanced heat mirror films
US6929864B2 (en) * 2002-08-17 2005-08-16 3M Innovative Properties Company Extensible, visible light-transmissive and infrared-reflective film and methods of making and using the film
US6933051B2 (en) * 2002-08-17 2005-08-23 3M Innovative Properties Company Flexible electrically conductive film
AU2003261463A1 (en) 2002-08-27 2004-03-19 Symmorphix, Inc. Optically coupling into highly uniform waveguides
US7224116B2 (en) * 2002-09-11 2007-05-29 Osram Opto Semiconductors Gmbh Encapsulation of active electronic devices
US20040048033A1 (en) * 2002-09-11 2004-03-11 Osram Opto Semiconductors (Malaysia) Sdn. Bhd. Oled devices with improved encapsulation
US6887733B2 (en) * 2002-09-11 2005-05-03 Osram Opto Semiconductors (Malaysia) Sdn. Bhd Method of fabricating electronic devices
US7193364B2 (en) * 2002-09-12 2007-03-20 Osram Opto Semiconductors (Malaysia) Sdn. Bhd Encapsulation for organic devices
US7710019B2 (en) 2002-12-11 2010-05-04 Samsung Electronics Co., Ltd. Organic light-emitting diode display comprising auxiliary electrodes
JP2004200041A (ja) * 2002-12-19 2004-07-15 Tohoku Pioneer Corp 有機ｅｌ表示装置
TW586329B (en) * 2003-01-29 2004-05-01 Au Optronics Corp Sealing structure and method of making the same
CN1756856B (zh) 2003-02-27 2011-10-12 希莫菲克斯公司 电介质阻挡层膜
US7365442B2 (en) * 2003-03-31 2008-04-29 Osram Opto Semiconductors Gmbh Encapsulation of thin-film electronic devices
US7648925B2 (en) 2003-04-11 2010-01-19 Vitex Systems, Inc. Multilayer barrier stacks and methods of making multilayer barrier stacks
US7510913B2 (en) 2003-04-11 2009-03-31 Vitex Systems, Inc. Method of making an encapsulated plasma sensitive device
US7344901B2 (en) * 2003-04-16 2008-03-18 Corning Incorporated Hermetically sealed package and method of fabricating of a hermetically sealed package
US6998776B2 (en) * 2003-04-16 2006-02-14 Corning Incorporated Glass package that is hermetically sealed with a frit and method of fabrication
US20040206953A1 (en) * 2003-04-16 2004-10-21 Robert Morena Hermetically sealed glass package and method of fabrication
US8728285B2 (en) 2003-05-23 2014-05-20 Demaray, Llc Transparent conductive oxides
US7238628B2 (en) * 2003-05-23 2007-07-03 Symmorphix, Inc. Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides
US20040238846A1 (en) * 2003-05-30 2004-12-02 Georg Wittmann Organic electronic device
US7495644B2 (en) * 2003-12-26 2009-02-24 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing display device
US8188643B2 (en) * 2003-12-26 2012-05-29 Panasonic Corporation Display apparatus
KR100553758B1 (ko) * 2004-02-02 2006-02-20 삼성에스디아이 주식회사 유기 전계 발광 소자
JP4540382B2 (ja) * 2004-04-05 2010-09-08 Ｈｏｙａ株式会社 撮影用照明装置
DE102004024676A1 (de) * 2004-05-18 2005-12-15 Süd-Chemie AG Filmförmige sorbenshaltige Zusammensetzungen
US7202504B2 (en) 2004-05-20 2007-04-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element and display device
KR100615228B1 (ko) * 2004-06-29 2006-08-25 삼성에스디아이 주식회사 흡습 능력이 개선된 유기 전계 발광 소자 및 그 제조방법
EP1617494B1 (en) * 2004-07-02 2010-08-11 Konarka Technologies, Inc. Organic photovoltaic component with encapsulation
US8732004B1 (en) 2004-09-22 2014-05-20 Experian Information Solutions, Inc. Automated analysis of data to generate prospect notifications based on trigger events
US7342356B2 (en) 2004-09-23 2008-03-11 3M Innovative Properties Company Organic electroluminescent device having protective structure with boron oxide layer and inorganic barrier layer
US20060063015A1 (en) 2004-09-23 2006-03-23 3M Innovative Properties Company Protected polymeric film
US7792732B2 (en) 2004-10-29 2010-09-07 American Express Travel Related Services Company, Inc. Using commercial share of wallet to rate investments
US20060093795A1 (en) * 2004-11-04 2006-05-04 Eastman Kodak Company Polymeric substrate having a desiccant layer
ATE447777T1 (de) 2004-12-08 2009-11-15 Symmorphix Inc Abscheidung von licoo2
US7959769B2 (en) 2004-12-08 2011-06-14 Infinite Power Solutions, Inc. Deposition of LiCoO2
US20060145599A1 (en) * 2005-01-04 2006-07-06 Reza Stegamat OLEDs with phosphors
US7767498B2 (en) * 2005-08-25 2010-08-03 Vitex Systems, Inc. Encapsulated devices and method of making
US7838133B2 (en) 2005-09-02 2010-11-23 Springworks, Llc Deposition of perovskite and other compound ceramic films for dielectric applications
US7549905B2 (en) * 2005-09-30 2009-06-23 International Display Systems, Inc. Method of encapsulating an organic light emitting device
US20080033852A1 (en) * 2005-10-24 2008-02-07 Megdal Myles G Computer-based modeling of spending behaviors of entities
US7621794B2 (en) * 2005-11-09 2009-11-24 International Display Systems, Inc. Method of encapsulating an organic light-emitting device
US20080124558A1 (en) * 2006-08-18 2008-05-29 Heather Debra Boek Boro-silicate glass frits for hermetic sealing of light emitting device displays
US8088502B2 (en) * 2006-09-20 2012-01-03 Battelle Memorial Institute Nanostructured thin film optical coatings
WO2008039471A2 (en) 2006-09-29 2008-04-03 Infinite Power Solutions, Inc. Masking of and material constraint for depositing battery layers on flexible substrates
US8036979B1 (en) 2006-10-05 2011-10-11 Experian Information Solutions, Inc. System and method for generating a finance attribute from tradeline data
US8197781B2 (en) 2006-11-07 2012-06-12 Infinite Power Solutions, Inc. Sputtering target of Li3PO4 and method for producing same
BRPI0721299B1 (pt) * 2006-12-28 2018-07-24 3M Innovative Properties Company. Método para formação de um filme condutivo em um suporte de polímero flexível, filme condutivo e método para a fabricação de um artigo de vitrificação
US8606666B1 (en) 2007-01-31 2013-12-10 Experian Information Solutions, Inc. System and method for providing an aggregation tool
US8606626B1 (en) 2007-01-31 2013-12-10 Experian Information Solutions, Inc. Systems and methods for providing a direct marketing campaign planning environment
JP5208591B2 (ja) * 2007-06-28 2013-06-12 株式会社半導体エネルギー研究所 発光装置、及び照明装置
EP2225406A4 (en) 2007-12-21 2012-12-05 Infinite Power Solutions Inc PROCEDURE FOR SPUTTER TARGETS FOR ELECTROLYTE FILMS
US8268488B2 (en) 2007-12-21 2012-09-18 Infinite Power Solutions, Inc. Thin film electrolyte for thin film batteries
EP2229706B1 (en) 2008-01-11 2014-12-24 Infinite Power Solutions, Inc. Thin film encapsulation for thin film batteries and other devices
EP2266183B1 (en) 2008-04-02 2018-12-12 Sapurast Research LLC Passive over/under voltage control and protection for energy storage devices associated with energy harvesting
US8350451B2 (en) * 2008-06-05 2013-01-08 3M Innovative Properties Company Ultrathin transparent EMI shielding film comprising a polymer basecoat and crosslinked polymer transparent dielectric layer
WO2010019577A1 (en) 2008-08-11 2010-02-18 Infinite Power Solutions, Inc. Energy device with integral collector surface for electromagnetic energy harvesting and method thereof
US8260203B2 (en) 2008-09-12 2012-09-04 Infinite Power Solutions, Inc. Energy device with integral conductive surface for data communication via electromagnetic energy and method thereof
WO2010042594A1 (en) 2008-10-08 2010-04-15 Infinite Power Solutions, Inc. Environmentally-powered wireless sensor module
JP2011003522A (ja) 2008-10-16 2011-01-06 Semiconductor Energy Lab Co Ltd フレキシブル発光装置、電子機器及びフレキシブル発光装置の作製方法
US20100095705A1 (en) 2008-10-20 2010-04-22 Burkhalter Robert S Method for forming a dry glass-based frit
US9337446B2 (en) 2008-12-22 2016-05-10 Samsung Display Co., Ltd. Encapsulated RGB OLEDs having enhanced optical output
US9184410B2 (en) 2008-12-22 2015-11-10 Samsung Display Co., Ltd. Encapsulated white OLEDs having enhanced optical output
US8219408B2 (en) * 2008-12-29 2012-07-10 Motorola Mobility, Inc. Audio signal decoder and method for producing a scaled reconstructed audio signal
US8766269B2 (en) * 2009-07-02 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, lighting device, and electronic device
JP5492998B2 (ja) 2009-09-01 2014-05-14 インフィニット パワー ソリューションズ， インコーポレイテッド 薄膜バッテリを組み込んだプリント回路基板
US8590338B2 (en) 2009-12-31 2013-11-26 Samsung Mobile Display Co., Ltd. Evaporator with internal restriction
US9000442B2 (en) * 2010-01-20 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, flexible light-emitting device, electronic device, and method for manufacturing light-emitting device and flexible-light emitting device
TWI589042B (zh) * 2010-01-20 2017-06-21 半導體能源研究所股份有限公司 發光裝置，撓性發光裝置，電子裝置，照明設備，以及發光裝置和撓性發光裝置的製造方法
US9652802B1 (en) 2010-03-24 2017-05-16 Consumerinfo.Com, Inc. Indirect monitoring and reporting of a user's credit data
CN102947976B (zh) 2010-06-07 2018-03-16 萨普拉斯特研究有限责任公司 可充电、高密度的电化学设备
TWI540939B (zh) 2010-09-14 2016-07-01 半導體能源研究所股份有限公司 固態發光元件，發光裝置和照明裝置
JP5827104B2 (ja) 2010-11-19 2015-12-02 株式会社半導体エネルギー研究所 照明装置
TWI562422B (en) 2010-12-16 2016-12-11 Semiconductor Energy Lab Co Ltd Light-emitting device and lighting device
US8735874B2 (en) 2011-02-14 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, display device, and method for manufacturing the same
KR101922603B1 (ko) 2011-03-04 2018-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치, 조명 장치, 기판, 기판의 제작 방법
KR102079188B1 (ko) 2012-05-09 2020-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 전자 기기
WO2014129519A1 (en) 2013-02-20 2014-08-28 Semiconductor Energy Laboratory Co., Ltd. Peeling method, semiconductor device, and peeling apparatus
CN103560209A (zh) * 2013-10-12 2014-02-05 深圳市华星光电技术有限公司 有机发光二极管装置以及其制造方法
WO2015087192A1 (en) 2013-12-12 2015-06-18 Semiconductor Energy Laboratory Co., Ltd. Peeling method and peeling apparatus
US10262362B1 (en) 2014-02-14 2019-04-16 Experian Information Solutions, Inc. Automatic generation of code for attributes
US10242019B1 (en) 2014-12-19 2019-03-26 Experian Information Solutions, Inc. User behavior segmentation using latent topic detection
US10431510B2 (en) * 2017-10-09 2019-10-01 Global Circuit Innovations, Inc. Hermetic lid seal printing method
US11588137B2 (en) 2019-06-05 2023-02-21 Semiconductor Energy Laboratory Co., Ltd. Functional panel, display device, input/output device, and data processing device
US11659758B2 (en) 2019-07-05 2023-05-23 Semiconductor Energy Laboratory Co., Ltd. Display unit, display module, and electronic device
CN113994494A (zh) 2019-07-12 2022-01-28 株式会社半导体能源研究所 功能面板、显示装置、输入输出装置、数据处理装置
JP2021043263A (ja) * 2019-09-06 2021-03-18 富士通オプティカルコンポーネンツ株式会社 光変調装置及び光変調装置の製造方法
US11539088B2 (en) 2020-03-09 2022-12-27 International Business Machines Corporation Ultra-thin microbattery packaging and handling

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL260956A (zh) * 1961-02-07
US3807833A (en) * 1971-10-29 1974-04-30 Optel Corp Electro-optic cell having a liquid isolated from its hermetic sealing means
US4097889A (en) * 1976-11-01 1978-06-27 Rca Corporation Combination glass/low temperature deposited Siw Nx Hy O.sub.z
JPS63105493A (ja) * 1986-10-22 1988-05-10 アルプス電気株式会社 薄膜ｅｌパネル
JP2636341B2 (ja) * 1988-06-09 1997-07-30 日本電気株式会社 有機薄膜ｅｌ素子
JPH0212284A (ja) * 1988-06-30 1990-01-17 Canon Inc 現像装置
JP2742057B2 (ja) * 1988-07-14 1998-04-22 シャープ株式会社 薄膜ｅｌパネル
JPH03239536A (ja) * 1990-02-16 1991-10-25 Nitto Denko Corp 透明導電性耐透湿フイルム
JP2776040B2 (ja) * 1990-04-27 1998-07-16 凸版印刷株式会社 有機薄膜ｅｌ素子
US5047687A (en) * 1990-07-26 1991-09-10 Eastman Kodak Company Organic electroluminescent device with stabilized cathode
US5059861A (en) * 1990-07-26 1991-10-22 Eastman Kodak Company Organic electroluminescent device with stabilizing cathode capping layer
US5073446A (en) * 1990-07-26 1991-12-17 Eastman Kodak Company Organic electroluminescent device with stabilizing fused metal particle cathode
JP2772739B2 (ja) * 1991-06-20 1998-07-09 いわき電子株式会社 リードレスパッケージの外部電極構造及びその製造方法
JP2699695B2 (ja) * 1991-06-07 1998-01-19 日本電気株式会社 化学気相成長法
JP2813499B2 (ja) * 1991-09-30 1998-10-22 出光興産株式会社 有機ｅｌ素子

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7683535B2 (en) 2000-02-03 2010-03-23 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method of manufacturing the same
US7745993B2 (en) 2000-02-03 2010-06-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light emitting device comprising reflective film
US7867053B2 (en) 2000-02-03 2011-01-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light emitting device
US8339038B2 (en) 2000-02-03 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US8810130B2 (en) 2000-02-03 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method of manufacturing the same
US9419066B2 (en) 2000-02-03 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method of manufacturing the same
CN100340002C (zh) * 2000-09-08 2007-09-26 株式会社半导体能源研究所 发光器件及其制造方法和薄膜形成装置

Also Published As

Publication number Publication date
EP0741419B1 (en) 2003-10-01
EP0741419A3 (en) 1997-09-03
JPH08306955A (ja) 1996-11-22
US5771562A (en) 1998-06-30
KR100372967B1 (ko) 2003-05-12
DE69630162T2 (de) 2004-06-09
EP0741419A2 (en) 1996-11-06
TW409422B (en) 2000-10-21
DE69630162D1 (de) 2003-11-06
CN1092396C (zh) 2002-10-09
KR960043022A (ko) 1996-12-21

Similar Documents

Publication Publication Date Title
CN1092396C (zh) 钝化有机发光二极管的方法
EP0777281B1 (en) Passivation of electroluminescent organic devices
US5757126A (en) Passivated organic device having alternating layers of polymer and dielectric
US6489719B1 (en) Organic electroluminescent device
US20010004113A1 (en) Organic electroluminescent element
KR20060113710A (ko) 전자 장치용 캡슐화 어셈블리
CA2447282C (en) Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices
CN1411323A (zh) 电激发光面板的制造方法
US7459220B2 (en) Electroluminescent panel
US6972518B2 (en) Device having a protective seal for emitting electromagnetic radiation and process for producing the device
JP2005527076A (ja) 有機電気光学素子の気密封止
CN110993818A (zh) 显示面板和显示装置
WO2019006507A1 (en) THIN FILM PHOTOVOLTAIC DEVICE AND ITS ENCAPSULATION METHOD
CN100505961C (zh) 有机电致发光器件
US7030557B2 (en) Display device with passivation structure
KR20040106513A (ko) 전자 발광 패널
US7695337B2 (en) Organic light-emitting diode and method of fabricating the same
US20060022579A1 (en) Organic light emitting diode display panel element and method for manufacturing the same
KR100324767B1 (ko) 반도체 표시소자 및 그 제조방법
CN110429201A (zh) Oled显示面板及其封装方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: MOTOROLA SOLUTIONS INC.

Free format text: FORMER NAME: MOTOROLA INC.

CP03 Change of name, title or address

Address after: Illinois State

Patentee after: Motorala Solutions

Address before: Illinois Instrunment

Patentee before: Motorola Inc.

ASS Succession or assignment of patent right

Owner name: UNIVERSAL DISPLAY CORP.

Free format text: FORMER OWNER: MOTOROLA SOLUTIONS INC.

Effective date: 20120119

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20120119

Address after: new jersey

Patentee after: Universal Display Corp.

Address before: Illinois State

Patentee before: Motorala Solutions

C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20021009

Termination date: 20140425