CN1090757C - 用于检测透镜变形的掩模 - Google Patents

用于检测透镜变形的掩模 Download PDF

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CN1090757C
CN1090757C CN96111025A CN96111025A CN1090757C CN 1090757 C CN1090757 C CN 1090757C CN 96111025 A CN96111025 A CN 96111025A CN 96111025 A CN96111025 A CN 96111025A CN 1090757 C CN1090757 C CN 1090757C
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CN1164644A (zh
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权炳仁
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SK Hynix Inc
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Hyundai Electronics Industries Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G01M11/0242—Testing optical properties by measuring geometrical properties or aberrations
    • G01M11/0257—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested
    • G01M11/0264—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested by using targets or reference patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70458—Mix-and-match, i.e. multiple exposures of the same area using a similar type of exposure apparatus, e.g. multiple exposures using a UV apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

用于检测透镜变形的掩模包括在石英的各个位置形成的多个母游标和与每个母游标间隔的多个子游标。

Description

用于检测透镜变形的掩模
本发明涉及一种用于检测用于半导体器件生产的曝光过程中的分档器中的透镜变形的掩模。
通常，安装在分档器中的透镜使用在半导体器件的生产过程中。在透镜的表面做得粗糙时，由于通过透镜的图形图象将畸变，所以图形图象将不能转换在晶片上，因此降低了器件的生产率。
因此，在完成分步重复过程之前，必须检测透镜的变形以确定透镜的状态。在现有技术中，如图1所示常规的用于检测变形的掩模包括多个母游标11和一个子游标12。多个母游标形成在石英基底10的不同的部分上，一个子游标12形成在一特殊部分，例如石英基底10的中心部分。
下面说明用上述掩模检测分档器中透镜变形的方法。
在将涂敷了感光性树脂的晶片安置在分档器的工作台上后，安装掩模，通过第一曝光过程，用完全打开的掩模将多个母游标11的图象转换在感光树脂上。其后，根据输入数据，移动工作台以便将掩模的子游杆12调整到与母游标11中的一个重叠。在这个位置，通过第二过程，用剩下的唯一的打开的掩模的子游标12的挡板，将子游标12的图象转换到感光性树脂上。于是当工作台根据输入数据移动时，必须对每一个母游标11重复这个分步过程。
当曝光过程完成时，为了使转换到感光性树脂上的每个多个母游标11的图象与一个子游标12的图象重叠，进行一个显影过程，检测母游标11和子游标12的重叠状态。在母游标11和子游标12中完全重叠的部分具有相当好的透镜质量。如果母游标11和子游标12中的位置设有完全重叠，那么相应的透镜部分是变形的。
因此，为了用一般的掩模检测透镜变形，曝光过程必须重复地进行以便形成子游标12和每一个母游标11的图象重叠。对每个曝光过程必须移动工作台。由于必须完成若干个曝光过程，因此需要大量时间，由于由若干个工作台的移动产生的误差可以影响透镜变形数据，所以不可能获得精确的变形数据。
于是，本发明的目的是提供一个用于检测透镜变形的掩模，它在移动一次工作台的情况下能通过转换母游标图象的一次曝光过程和转换与母游标的第一图象重叠的子游标的图象的二次曝光过程，来获得准确的变形数据。
为了实现上述的发明目的，根据本发明的用于检测变形的掩模，其特征是在于：包括一个石英基底，在石英基底上形成有多个母游标图案，在该石英基底上形成的多个子游标，每个子游标以相同的距离均匀地间隔开并与对应的母游标有相同的方向，在石英基底上在母游标和相应的子游标之间没有光学崎变结构，子游标和母游标被布置为使得掩膜和晶片之间的相互平移再定位覆盖了晶片上通过曝光传输的全部子游标和全部母游标，由此能够检测透镜变形。
为了更充分地理解本发明的特征和目的，必须参考下面结合附图的详细说明，其中：
图1是用于检测透镜变形的常规掩模的俯视图；以及
图2是根据本发明的用于检测透镜变形的掩模的俯视图。
各附图中相似的参考标记用来表示相同的部分。
下面参考附图详细描述本发明。
图2是根据本发明的用于检测透镜变形的掩模的俯视图。
参考图2，检测透镜变形的掩模包括多个母游标110和多个子游标120。多个母游标110形成在石英基底100的不同部分，而每一个子游标120以离多个母游标110横向距离为“-D”的间隔形成在该石英100上。
下面将描述用上述掩模检测分档器的透镜变形的方法。
将涂敷了感光性树脂的晶片置于分档器的工作台上之后，安装掩模，用充分打开的掩模通过第一曝光过程，将多个母游标110的图象转换到感光性树脂上。然后根据输入数据移动工作台，即以横向距离“-D”，以便使掩模上的每一个子游标120与每个其图象已转换在感光性树脂上的多个母游标110重叠。用完全打开的掩模，通过第二曝光过程，使多个子游标120的图象转换到感光性树脂上。
另一方面，应用本发明的掩模时，能得到在二个分档器之间透镜变形的不同。
将涂敷了感光性树脂的晶片设置在第一个分档器的工作台上，安装模片，用完全打开的掩模通过第一曝光过程，将多个母游标110的图象转换在感光性树脂上。然后，在将多个母游标110的图象转换在其上的晶片置于第二分档器的工作台上后，安装用在第一分档器上的掩模，然后，根据输入数据移动工作台即以横向距离“-D”，以便将在掩模100上的每个子游标120与感光材料上的每个母游标110的图象重叠。然后，通过第二曝光过程、用完全打开的掩模将多个子游标120的图象转换在感光性树脂上。
转换与每个子游标120的图象重叠的每个母游标110的图象的分挡过程完成时，显影工艺使已显影的母游标110和子游标120的重叠状态可测。
在检测分档器中透镜变形时，母游标110和它的子游标120准确重叠的已显影的那部分表明相应的透镜部分处于良好状态。如果存在母游标110和它的子游标120没有准确重叠的部分，那么相应的透镜部分是变形的。
在检测第一和第二分档器的透镜变形的差异中，母游标110和子游标120中精确地重叠的部分，相应地说明在每一个第一和第二分档器中的透镜的状态是相同的。如果存在母游标110和子游标120中没有精确地重叠的部分，那么，这说明在第一和第二分档器中的每个透镜的状态是不同的。
如上所述，应用本发明的掩模检测透镜变形能缩短检测时间，因为它能仅用转换多个母游标的图象和多个子游标的图象的两个分步过程检测透镜变形。并且，由于工作台只移动一次，本发明可获得正确的变形数据因此防止了由于多次移动工作台产生的误差影响透镜变形数据。另外，本发明能改善系统之间的兼容性，因为它能比较不同分档器之间的透镜变形的差异。
虽然上面以某种程度对优选的实施例作了说明，但以上的描述仅用作说明本发明的原理。应该理解到本发明不限于这些优选的实施例所公开和说明的内容。因此，在本发明的范围和精神下，能作的各种变化皆包含在本发明的进一步的实施例中。

Claims (1)

1、一种用于检测分档器中透镜变形的掩模，包括：
一个石英基底；
在石英基底上形成的多个母游标图案；和
在该石英基底上形成的多个子游标，每个子游标以相同的距离均匀地间隔开并与对应的母游标有相同的方向，在石英基底上在母游标和相应的子游标之间没有光学崎变结构，子游标和母游标被布置为使得掩膜和晶片之间的相互平移再定位覆盖了晶片上通过曝光传输的全部子游标和全部母游标，由此能够检测透镜变形。
CN96111025A 1995-06-20 1996-06-20 用于检测透镜变形的掩模 Expired - Fee Related CN1090757C (zh)

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KR16403/95 1995-06-20
KR1019950016403A KR970003401A (ko) 1995-06-20 1995-06-20 디스톨션 체크용 레티클

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KR (1) KR970003401A (zh)
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DE (1) DE19624649A1 (zh)
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KR100298189B1 (ko) * 1998-06-16 2001-08-07 박종섭 미스얼라인측정을위한중첩마크및방법
US6057914A (en) * 1999-04-09 2000-05-02 Advanced Micro Devices, Inc. Method for detecting and identifying a lens aberration by measurement of sidewall angles by atomic force microscopy
KR100437605B1 (ko) * 2001-09-05 2004-06-30 주식회사 하이닉스반도체 노광 장비의 렌즈 평가용 마스크 패턴
EP1785714B1 (en) * 2005-11-15 2017-02-22 Olympus Corporation Lens evaluation device
US8988653B2 (en) * 2009-08-20 2015-03-24 Asml Netherlands B.V. Lithographic apparatus, distortion determining method, and patterning device
CN102955379B (zh) * 2012-11-15 2017-02-01 上海集成电路研发中心有限公司 一种补偿镜头畸变造成的套刻误差的方法

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US4547446A (en) * 1983-06-20 1985-10-15 The Perkin-Elmer Corporation Motion measurement and alignment method and apparatus
US4669866A (en) * 1985-01-28 1987-06-02 Phillips Edward H Step-and-repeat alignment and exposure system and method therefore
JP2666859B2 (ja) * 1988-11-25 1997-10-22 日本電気株式会社 目合せ用バーニヤパターンを備えた半導体装置
JPH053143A (ja) * 1991-04-19 1993-01-08 Hitachi Ltd 位置合せ方法および装置
US5402224A (en) * 1992-09-25 1995-03-28 Nikon Corporation Distortion inspecting method for projection optical system
US5615006A (en) * 1992-10-02 1997-03-25 Nikon Corporation Imaging characteristic and asymetric abrerration measurement of projection optical system
DE19510449B4 (de) * 1994-03-22 2005-09-15 Hyundai Electronics Industries Co., Ltd., Ichon Retikel

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GB2302416B (en) 1999-02-10
DE19624649A1 (de) 1997-01-02
GB9612793D0 (en) 1996-08-21
GB2302416A (en) 1997-01-15
US5844672A (en) 1998-12-01
CN1164644A (zh) 1997-11-12
TW409334B (en) 2000-10-21
KR970003401A (ko) 1997-01-28

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