CN106542494B - A kind of method for preparing the not contour micro-nano structure of multilayer - Google Patents
A kind of method for preparing the not contour micro-nano structure of multilayer Download PDFInfo
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- CN106542494B CN106542494B CN201610850447.7A CN201610850447A CN106542494B CN 106542494 B CN106542494 B CN 106542494B CN 201610850447 A CN201610850447 A CN 201610850447A CN 106542494 B CN106542494 B CN 106542494B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
Abstract
The invention discloses the multilayer micro-nano structure preparation method in a kind of flexible structure.This method classifies not contour micro-nano structure to be prepared according to structure height；The micro-nano structure of minimum altitude part is prepared by the way of PDMS is to silicon masterplate replica；Using high guarantor's type transfer method, transfer preparation is carried out, is finished until prepared by the micro-nano structure part of maximum height using the micro-nano structure of remaining height component as PDMS structures to be transferred from low to high successively.The present invention completes the preparation of the not contour micro-nano structure of multilayer by successively shifting method of the single layer structure to base layer structure.Technical process is simple, it is easy to accomplish micro-nano structure integrates, by the making and the making of super-drainage structure that are widely used in bionical multilayer micro-nano structure.
Description
Technical field
The invention belongs to integrated circuit and micro-nano electronic mechanical system production field, more particularly in a kind of flexible structure
In multilayer micro-nano structure preparation method.
Background technology
The not contour micro-nano structure of multilayer in bionics, in optics, Surface Science, before medicine and other fields extensive application
Scape.Multilayer micro-nano structure is super-hydrophobic anti-freeze, and widely studied and application has been carried out in the field such as heat transfer.However, adopt
Not contour multilayer micro-nano structure can not be prepared with etching-replication method of traditional single mask plate, using the side of alignment
Formula most multipotency completes double-deck micro-nano structure and is difficult to ensure that high guarantor's type of prepared multilayer micro-nano structure, certain using also having
Limitation.Thus used conventional methods when preparing multilayer not contour micro-nano structure with very big difficulty, it is necessary to be directed to this
Problem proposes new process program.
The content of the invention
The purpose of the present invention is：In order to overcome it is existing preparation multilayer micro-nano structure method the shortcomings that, the present invention based on layering-
The thought of assembling proposes a kind of method for shifting assembling, structure is divided into each independent individual layer, by wherein minimum one layer
Structure is set to structured base layer, and each independent structure sheaf transfer is bonded on base layer structure by the method successively shifted,
Finally complete the preparation of the not contour micro-nano structure of multilayer.
The technical scheme is that：One kind is used for the not contour micro-nano structure preparation method of multilayer, including following three big steps
Suddenly：
Step 1：Not contour micro-nano structure to be prepared is classified according to structure height, it is respectively h1 to obtain height,
H2 ... hn structure, h1<h2<……<Hn, n are more than or equal to 2；
Step 2：PDMS is used to prepare micro-nano structure of the height for h1 parts to the mode of silicon masterplate replica；Detailed process
It is as follows：
Sub-step one：The silicon chip mask plate of the part is prepared, and alignment mark is added on mask plate；
Sub-step two：Photoetching and dry etching are carried out to monocrystalline silicon 1 with mask plate prepared by sub-step 1, obtain the part
Silicon template 2；
Sub-step three：Silicon template is poured into by PDMS solution, the PDMS that the silicon template is gone out through hot setting replica is tied
Structure 3；
Step 3：Using high guarantor's type transfer method, successively using height for h2 ... ... hn parts micro-nano structure as treating turn
PDMS structures are moved, carry out transfer preparation, are finished until prepared by maximum height hn micro-nano structure part；It is high described in the step to protect
The detailed process of type transfer method is as follows：
Step 1：Prepare the silicon template 5 of certain height PDMS structures to be transferred；Specifically include following sub-step：
Sub-step 1：The corresponding silicon chip mask plates of certain height PDMS need to be shifted by preparing the part, and be added on mask plate
Add alignment mark；
Sub-step 2：Photoetching and dry etching are carried out to monocrystalline silicon 4 with mask plate prepared by sub-step 1, obtain needed for wait to turn
Move the silicon template 5 of certain height PDMS structures；
Step 2：Make PDMS transfer layers 8；Specifically include following sub-step：
Sub-step 1：Prepare uniform thickness PDMS layer 6；
As the more excellent scheme in the sub-step, the process prepares mold I by making PDMS transfer layers, then will
After the PDMS matched carries out application of vacuum with curing agent, pour into PDMS transfer layer molds I after solidifying and realize；The system
Make PDMS transfer layers and prepare mold I detailed process be：Take two pieces of clean 9, four pieces of lucite pads of quartz glass plate
10, four binder clips of solid flexible rubber circle of block 11, one, one of quartz glass is placed on by solid flexible rubber circle 10
An open cylindrical cavity is surrounded on plate 9, lucite cushion block 11 is placed on to four positions of solid flexible rubber circle 10, then will
Other one piece of quartz glass plate 9 is covered in the direction of the nethermost quartz glass version 9 of face and forms PDMS transfer layer systems above
Standby mold cavity I, then uniformly steps up to fix with binder clip along four direction.
Sub-step 2：Uniform thickness PDMS layer 6 prepared by sub-step 1 and a culture dish are put into vitreous evacuated container, carried out
Vacuumize, then by by intake valve toward injecting this inert gas of nitrogen in casing until inside and outside air pressure balance；Beat rapidly
Unpacking body simultaneously drips silicon fluoride solution into culture dish, then closes casing rapidly and carries out vacuum pumping immediately, stands one
The section time, taken out after PDMS uniform thickness layer surfaces deposited one layer of silicon fluoride；Nitrogen during this is prevented as protection gas
The silicon fluoride oxidation deactivation that will be instilled；
Sub-step 3：PDMS blanket layers 6 after the fluorination treatment of sub-step 2 are put into after being incubated a period of time in insulating box and taken
Go out；The process is assembled to complete silicon fluoride layer 7 and the molecule of PDMS uniform thickness layer surfaces, makes silicon fluoride layer 7 in its surface
It is more stable to retain.
So far, the making of PDMS transfer layers 8 is completed.
Step 3：Slowly try to drip the PDMS solution of quasi- amount along the silicon template center of step 1, treat it from face center toward surrounding
Scatter, slowly flow into each structural cavities, it is desirable to which PDMS solution does not spill over silicon chip template surface with exterior domain；
Step 4：The PDMS transfer layers 8 made using step 2, being placed in silicon template 5 in step 3 has the one side of PDMS structures,
Uniformly apply pressure, be put into after solidifying in insulating box and take out, then peel off silicon template 5, each structural cavities in such silicon template 5
Interior PDMS structures are transferred on PDMS transfer layers 8 with regard to guarantor's type；
In order to preferably uniformly apply pressure to PDMS transfer layers 8 in this process, the present invention is used as a kind of more excellent side
Case, cavity is loaded come what is realized using high precision silicon template, its detailed process includes following sub-step：
Sub-step 1：One piece of clean quartz glass plate 9 is taken, one piece and used silicon chip mould are fixed in heart district domain wherein
Has the silicon template 5 of comparable size.
Sub-step 2：Separately take one piece of clean solid flexible rubber of 9, four pieces of quartz glass plate lucite cushion block 11, one
10, four binder clips are enclosed, silicon template 5 is fixed on quartz glass plate centre of surface position, solid flexible rubber circle 10 is placed
On the quartz glass plate 9 of sub-step one and an open cylindrical cavity is surrounded, lucite cushion block 11 is placed on solid flexible rubber
Four positions of cushion rubber 10, then other one piece of quartz glass plate 9 is covered with the direction of the nethermost quartz glass version 9 of face
High precision silicon template loading mould is formed above and prepares chamber II, then uniformly steps up to fix along four direction with binder clip.
Sub-step 3：The high precision silicon template loading mould obtained toward sub-step 2, which is prepared in chamber II, pours into what is matched
PDMS solution 13, it is then placed in insulating box and solidifies.PDMS high precision silicons template loading mould I is integrally taken out after being cured.
Silicon template is put into the high precision silicon template and loads mould 12 so that silicon template surface and high precision silicon template are loaded on mould 12
Surface keeps concordant.
Step 5：It is because now transfer has current certain height micro-nano structure to be prepared on PDMS transfer layers, this is highly micro-
Micro-nano structure is directed at bonding with base layer structure, and all micro-nano structures less than present level have been prepared on described base layer structure,
Current PDMS transfer layers are peeled off afterwards, have been prepared for all new basic units equal to or less than present level micro-nano structure
Structure；
Finished when prepared by maximum height hn micro-nano structure part, the not contour micro-nano structure of multilayer in the present invention has made
Into.
The beneficial effects of the invention are as follows：The present invention is more by successively shifting method completion of the single layer structure to base layer structure
The preparation of the not contour micro-nano structure of layer.Make PDMS flexible structures in technical process by way of etching photoresist mask first
The silicon substrate mould of layer, the mode for then first passing through replica copy base layer structure, then by the individual layer of separation by way of transfer
Structure is shifted and is assembled on base layer structure successively via transfer layer, finally completes the preparation of the not contour micro-nano structure of multilayer.Technique
Process is simple, it is easy to accomplish micro-nano structure integrates, by the making for being widely used in bionical multilayer micro-nano structure and super-hydrophobic knot
In the making of structure.
Brief description of the drawings
Fig. 1 is to prepare flow chart of the height for the micro-nano structure of h1 parts.
Fig. 2 is high guarantor's type transfer method flow chart.
Fig. 3 is the process chart that height is directed at bonding for h1 structure sheaf with the PDMS structure sheafs of certain height.
Fig. 4 is that PDMS transfer layers prepare mold I and high precision silicon template loads mould and prepares chamber II.
Fig. 5 is the big depth-of-field microscope observation chart after the not contour micro-nano structure alignment bonding of the bilayer.
In figure：1- monocrystalline silicon I, 2- silicon template, the bottom PDMS structures that 3- replicas go out, 4- monocrystalline silicon, 5- silicon templates II, 6-
PDMS blanket layers, 7- silicon fluoride layers, 8-PDMS transfer layers
9 quartz glass plates, the solid flexible rubber circles of 10-, 11- lucite cushion blocks, 12- high precision silicons template load mould
Tool, 13-PDMS solution, 14- uniform loads.
Embodiment
Embodiment 1：
This gives a kind of preparation method of the not contour micro-nano structure of multilayer, the multilayer micro-nano structure includes height
For 8 μm of rod array structure, and the shuttle-type shape array structure of 10 μm of height.The technique system of the present embodiment multilayer micro-nano structure
Preparation Method comprises the following steps：
Step 1：Not contour micro-nano structure to be prepared is classified according to structure height, obtains the column battle array that height is 8 μm
Array structure, and the shuttle-type shape array structure that height is 10 μm；
Step 2：PDMS is used to prepare the column structure that height is 8 μm for height to the mode of silicon masterplate replica；
Detailed process includes following sub-step：
Sub-step one：Prepare silicon chip mask plate；Rod array structure, array of structures size are designed by mask：Circle
Column diameter is 5 μm, and cylinder height is 8 μm, and the longitudinal pitch between cylinder is 10 μm, and transverse pitch is 10 μm.Add simultaneously
Alignment mark.
Sub-step two：Photoetching is carried out to monocrystalline silicon with mask plate prepared by sub-step one, obtains required PDMS knots to be transferred
The silicon template of structure；Photoetching using inductively coupled plasma reactive ion etching, its use the design parameter of etching technics for：
SF6, gas flow 180sccm/min, etch period 14s；C4F6, gas flow 85sccm/min, passivation time 7s；Etching/
The number of passivation cycle is 7-28 times；After etching terminates, using O2 as working gas, photoresist is removed；
Sub-step three：With 10：1 mass ratio proportioning PDMS and curing agent, wherein 10 grams of PDMS liquid, 1 gram of curing agent.
Both are poured into culture dish respectively and stirred, is put into vacuum drying chamber, to its vacuumize process, PDMS to be evacuated to is molten
Vacuum drying chamber is closed in liquid during bubble-free, it is taken out out of vacuum drying chamber；Then it is poured into silicon mould,
Step 3：Using high guarantor's type transfer method, the shuttle-type shape structure that height is 10 μm is prepared；It is high described in the step to protect
The detailed process of type transfer method is：
Step 1：Prepare the silicon template of PDMS structures to be transferred；Specifically include following sub-step：
Sub-step 1：Prepare silicon chip mask plate；Shuttle-type shape array structure, array of structures size are designed by mask：It is single
Shuttle-type shape structure length is 45 μm, 10 μm of arc radius, and width is 20 μm, and the interstructural longitudinal pitch of shuttle-type shape is 10 μm,
Transverse pitch is 70 μm.Add alignment mark simultaneously.
Sub-step 2：Photoetching is carried out to monocrystalline silicon with mask plate prepared by sub-step one, obtains required PDMS structures to be transferred
Silicon template；Photoetching using inductively coupled plasma reactive ion etching, its use the design parameter of etching technics for：SF6,
Gas flow 180sccm/min, etch period 14s；C4F6, gas flow 85sccm/min, passivation time 7s；Etching/passivation
The number of circulation is 7-28 times；After etching terminates, using O2 as working gas, photoresist is removed；
Step 2：Make PDMS transfer layers；Specifically include following sub-step：
Sub-step 1：Prepare PDMS blanket layers；In the embodiment, first with 7：1 mass ratio proportioning PDMS and solidification
Agent, wherein 21 grams of PDMS liquid, 3 grams of curing agent.Both are poured into culture dish respectively and stirred, is put into vacuum drying chamber
It is interior, to its vacuumize process, vacuum drying chamber is closed when bubble-free in PDMS solution is evacuated to, it is taken out of vacuum drying chamber
Go out；Mold is prepared followed by PDMS transfer layers are made：Take two pieces of clean quartz glass plates, four block size 2mm × 2mm
× 2mm lucite cushion block, one a diameter of 3mm, length are 20mm solid flexible rubber circle, four in its natural state
Individual binder clip, solid flexible rubber circle is placed on one of quartz glass plate and surrounds an open cylindrical cavity, cushion block is put
Put in four positions of nylon rope, then cover other one piece of quartz glass plate with the direction of the nethermost quartz glass version of face
Cover and forming PDMS transfer layers preparation mold above, then uniformly step up to fix along four direction with binder clip；Finally will
The PDMS solution for having taken out vacuum is poured into made PDMS transfer layers preparation mold, is then wholy placed in insulating box
It is interior, with 60 DEG C of temperature, solidify 8 hours, be drawn off after being cured, mold of dismantling, PDMS taken out, is cured
Thickness be 2mm PDMS.
Sub-step 2：PDMS blanket layers prepared by sub-step one and a culture dish are put into vitreous evacuated container, carried out
Vacuumize until draught head is an atmospheric pressure, then by being made by intake valve toward this inert gas of injection nitrogen in casing
The silicon fluoride oxidation deactivation for preventing from instilling for protection gas, injection nitrogen gas are until inside and outside air pressure balance.Then beat rapidly
Unpacking body simultaneously drips 2-3ml silicon fluoride solution into culture dish, then closes casing rapidly and carries out vacuum pumping immediately, directly
It is an atmospheric pressure to inside and outside differential pressure.Taken out after standing 3h.
Sub-step 3：PDMS blanket layers after the processing of sub-step bifluoride are put into insulating box with 60 degrees Celsius of temperature
Taken out after insulation a period of time；The process is assembled to complete silicon fluoride layer and the molecule of PDMS uniform thickness layer surfaces, makes fluorine silicon
Alkane layer is more stable in its surface to retain.
So far, the making of PDMS transfer layers is completed.
Step 3：Slowly try to drip the PDMS solution of quasi- amount along the silicon template center of silicon chip one, treat it from face center toward surrounding
Scatter, slowly flow into each structural cavities, it is desirable to which PDMS solution does not spill over silicon template surface with exterior domain；
Step 4：The PDMS transfer layers made using step 2, being placed in silicon template in step 3 has the one side of PDMS structures,
Uniformly apply pressure, be put into after solidifying in insulating box and take out, then peel off PDMS transfer layers, each structure is empty in such silicon template
The PDMS structures of intracavitary are transferred on PDMS transfer layers with regard to guarantor's type；
In order to preferably uniformly apply pressure to PDMS transfer layers in this process, using high-precision in the present embodiment
Spend silicon template and load cavity come what is realized, its detailed process includes following sub-step：
Sub-step 1：With 5:1 mass ratio proportioning PDMS liquid and curing agent, wherein 15 grams of PDMS liquid qualities, solidification
Agent quality is 3 grams, pours into same glass container, vacuumize process is carried out after glass bar stirs；
Sub-step 2：Make high precision silicon template loading mould and prepare chamber：Take two pieces of clean quartz glass plates, four pieces
Size 2mm × 2mm × 2mm lucite cushion block, one a diameter of 3mm, length are the solid soft of 20mm in its natural state
Property rubber ring, four binder clips, solid flexible rubber circle is placed on one of quartz glass plate and surrounds an open circle
Chamber, cushion block is placed on to four positions of solid flexible rubber circle, by the standard crystalline substance that one piece of 20mm × 20mm thickness is 500 μm
Circle is fitted on the pieces of quartz glass plate with double faced adhesive tape, then by other one piece of quartz glass plate with the nethermost quartzy glass of face
The direction of glass plate is covered in composition high precision silicon template loading mould above and prepares chamber, then equal along four direction with binder clip
It is even to step up to fix；
Sub-step 3：After the completion for the treatment of PDMS solidifications, cavity of dismantling, take out prepared high precision silicon template and load mould.
High guarantor's type transfer process of silicon template micro-structural is divided into following sub-step in the present embodiment：
Sub-step 1：With 10：1 mass ratio proportioning liquid PDMS and curing agent, carries out vacuumize process；
Sub-step 2：Taking-up instrument：Bidirectional flat-nose pliers, two pieces of quartz glass, the aluminium that size is 50mm × 100mm × 10mm
Foil paper, double faced adhesive tape.Aluminium-foil paper is cut, is entirely fitted in respectively on two pieces of quartz glass plates by double faced adhesive tape, by the inner system of step 5
Standby high precision silicon template loads mould and is placed on wherein a piece of quartz glass plate, using aluminium-foil paper and PDMS suction-operated,
It is set to be fitted in surface, the silicon template for the structure to be shifted is put into high precision silicon template loads in mould；
Sub-step 3：The PDMS solution that will be obtained in sub-step one, take and drop in silicon template surface on a small quantity, treat that it covers surface
, then stand 10min and treat PDMS solution completely into the PDMS transfer layers that in silicon template, step 2 is made, along quartz
One side of glass plate is gently twisted with the fingers toward another side and pressed, and ensures to twist with the fingers bubble-free in pressure and occurs, until being completely covered on the surface of silicon template.
Sub-step 4：It is vertical to place Bidirectional flat-nose pliers, by the PDMS transfer layers posted in sub-step three and silicon template together with
Quartz glass plate is placed on the lower clamping face of Bidirectional flat-nose pliers together, is then turned knob and is declined upper clamping face, applies load
Clamp.Entirety is put into insulating box, with 60 DEG C of temperature-curable 8 hours；
Sub-step 5：After being cured, overall take out reversely rotates Bidirectional flat-nose pliers knob, removes clamping face, and PDMS is turned
Move layer integrally to take out together with the structure in silicon template, complete high guarantor's type transfer in the silicon template of PDMS flexible structures.Then lead to
Relative position relation of the excessive depth-of-field microscope observation according to alignment mark double-layer structure, is put using oxygen plasma respectively
Electric treatment mode carries out Corona discharge Treatment respectively to double-layer structure, activity is bonded to improve surface, then by double-layer structure pressure
Tight bonding, takes out after placing 2h, PDMS transfer layers is peeled off away manually.
Step 5：Because now transfer has current certain height micro-nano structure to be prepared, i.e. 10 μm of height on PDMS transfer layers
Shuttle-type shape array structure；The micro-nano structure is directed at bonding with base layer structure, has been prepared for owning on described base layer structure
Less than the micro-nano structure of present level, i.e. height is 8 μm of rod array structure, peels off current PDMS transfer layers afterwards,
Be prepared for the two of all height micro-nano structures layer by layer not contour micro-nano structure complete.The big depth of field is micro- in this implementation
Mirror observation chart is as shown in Figure 5 so far.
Claims (4)
1. one kind is used for the not contour micro-nano structure preparation method of multilayer, it is characterised in that including following three big steps：
Step 1：Not contour micro-nano structure to be prepared is classified according to structure height, it is respectively h1, h2 ... hn to obtain height
Structure, h1<h2<……<Hn, n are more than or equal to 2；
Step 2：PDMS is used to prepare micro-nano structure of the height for h1 parts to the mode of silicon template replica；
Step 3：Using high guarantor's type transfer method, successively using the micro-nano structure that height is h2 ... ... hn parts as to be transferred
PDMS structures, transfer preparation is carried out, finished until prepared by maximum height hn micro-nano structure part；High guarantor's type transfer method
Detailed process it is as follows：
Step 1：Prepare the silicon template (5) of certain height PDMS structures to be transferred；Specifically include following sub-step：
Sub-step 1：The corresponding silicon chip mask plates of certain height PDMS, and the addition pair on mask plate need to be shifted by preparing the part
Fiducial mark is remembered；
Sub-step 2：Photoetching and dry etching are carried out to monocrystalline silicon (4) with mask plate prepared by sub-step 1, obtained required to be transferred
The silicon template (5) of certain height PDMS structures；
Step 2：Make PDMS transfer layers (8)；Specifically include following sub-step：
Sub-step 1：Prepare PDMS blanket layers (6)；
Sub-step 2：PDMS blanket layers (6) prepared by sub-step 1 and a culture dish are put into vitreous evacuated container, take out true
Sky, then by intake valve toward injection this inert gas of nitrogen in casing until inside and outside air pressure balance；It is rapid to open casing simultaneously
Silicon fluoride solution is dripped into culture dish, casing is then closed rapidly and carries out vacuum pumping immediately, stand a period of time, treat
Taken out after deposited one layer of silicon fluoride on PDMS blanket layers (6) surface；Nitrogen during this is to prevent from dripping as protection gas
The silicon fluoride oxidation deactivation entered；
Sub-step 3：PDMS blanket layers (6) after the fluorination treatment of sub-step 2 are put into after being incubated a period of time in insulating box and taken out；
The process is assembled to complete silicon fluoride layer (7) and the molecule on PDMS blanket layers (6) surface, makes silicon fluoride layer (7) in its table
It is more stable on face to retain；
So far, the making of PDMS transfer layers (8) is completed；
Step 3：Along silicon template (5) the center PDMS solution that slowly examination drop standard is measured of step 1, treat that it dissipates from face center toward surrounding
Open, slowly flow into each structural cavities, it is desirable to which PDMS solution does not spill over silicon chip template surface with exterior domain；
Step 4：The PDMS transfer layers (8) made using step 2, being placed in silicon template (5) in step 3 has the one side of PDMS structures,
Uniformly apply pressure, be put into after solidifying in insulating box and take out, then peel off silicon template (5), each structure on such silicon template (5)
PDMS structures in cavity are transferred on PDMS transfer layers (8) with regard to guarantor's type；
Step 5：It is because now transfer has current certain height micro-nano structure to be prepared on PDMS transfer layers (8), this is highly micro-
Micro-nano structure is directed at bonding with base layer structure, and all micro-nano structures less than present level have been prepared on described base layer structure,
Current PDMS transfer layers (8) are peeled off afterwards, have been prepared for all new equal to or less than present level micro-nano structure
Base layer structure.
2. one kind is used for the not contour micro-nano structure preparation method of multilayer as claimed in claim 1, it is characterised in that the step
Two include following sub-step：
Sub-step one：The silicon chip mask plate of the part is prepared, and alignment mark is added on mask plate；
Sub-step two：Photoetching and dry etching are carried out to monocrystalline silicon (1) with mask plate prepared by sub-step one, obtain the part
Silicon template (2)；
Sub-step three：Silicon template (2) is poured into by PDMS solution, the PDMS structures of the silicon template are gone out through hot setting replica
(3)。
3. one kind is used for the not contour micro-nano structure preparation method of multilayer as claimed in claim 1, it is characterised in that the step
Sub-step 1 in three in the step 2 of the detailed process of high guarantor's type transfer method, more excellent scheme detailed process are：Pass through making
PDMS transfer layers prepare mold I, after the PDMS matched and curing agent then are carried out into application of vacuum, pour into PDMS transfers
Realized after solidifying in layer mold I；The detailed process that the making PDMS transfer layers prepare mold I is：Take two pieces it is clean
Net quartz glass plate (9), four pieces of lucite cushion blocks (11), solid flexible rubber circle (10), four binder clips, will be real
Heart flexible rubber circle (10), which is placed on one of quartz glass plate (9), surrounds an open cylindrical cavity, by lucite cushion block
(11) four positions of solid flexible rubber circle (10) are placed on, it is then that other one piece of quartz glass plate (9) is most lower with face
The direction of the quartz glass plate (9) in face is covered in composition PDMS transfer layers above and prepares mold I, then with binder clip along four
Uniformly step up to fix in individual direction.
4. one kind is used for the not contour micro-nano structure preparation method of multilayer as claimed in claim 1, it is characterised in that the step
The more excellent scheme of the step 4 of the detailed process of high guarantor's type transfer method in three, cavity is loaded using high precision silicon template
Realize, its detailed process includes following sub-step：
Sub-step 1：One piece of clean quartz glass plate (9) is taken, one piece and used silicon chip mould are fixed in heart district domain wherein
The silicon template (5) of comparable size；
Sub-step 2：Separately take one piece of clean quartz glass plate (9), four pieces of lucite cushion blocks (11), a solid flexible rubber
(10), four binder clips are enclosed, silicon template (5) are fixed on quartz glass plate centre of surface position, by solid flexible rubber circle
(10) it is placed on the quartz glass plate (9) of sub-step one and surrounds an open cylindrical cavity, lucite cushion block (11) is placed
In four positions of solid flexible rubber circle (10), then by other one piece of quartz glass plate (9) with the nethermost quartz of face
The direction of glass plate (9), which is covered in composition high precision silicon template above and loads mould, prepares chamber II, then with binder clip along four
Uniformly step up to fix in individual direction；
Sub-step 3：High precision silicon template (5) the loading mould obtained toward sub-step 2, which is prepared in chamber II, pours into what is matched
PDMS solution (13), it is then placed in insulating box and solidifies；PDMS high precision silicons template loading mould I is integrally taken after being cured
Go out；Silicon template (5) is put into the high precision silicon template and loads mould I so that silicon template (5) surface and high precision silicon template load
Mould I upper surfaces keep concordant.
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| CN107275439B (en) * | 2017-06-01 | 2018-10-30 | 西南交通大学 | A kind of manufacturing method of " I " type structure PDMS matrixes based on reverse |
| CN107221578B (en) * | 2017-06-01 | 2018-08-21 | 西南交通大学 | A kind of manufacturing method of " I " type structure PDMS matrixes |
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