CN106430085A - Protection method for MEMS pressure sensor packaging - Google Patents

Protection method for MEMS pressure sensor packaging Download PDF

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Publication number
CN106430085A
CN106430085A CN201611125109.3A CN201611125109A CN106430085A CN 106430085 A CN106430085 A CN 106430085A CN 201611125109 A CN201611125109 A CN 201611125109A CN 106430085 A CN106430085 A CN 106430085A
Authority
CN
China
Prior art keywords
pressure sensor
mems pressure
encapsulation
filled media
mems
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201611125109.3A
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Chinese (zh)
Inventor
张子龙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SUZHOU MEILUN KAILI ELECTRONICS Co Ltd
Original Assignee
SUZHOU MEILUN KAILI ELECTRONICS Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SUZHOU MEILUN KAILI ELECTRONICS Co Ltd filed Critical SUZHOU MEILUN KAILI ELECTRONICS Co Ltd
Priority to CN201611125109.3A priority Critical patent/CN106430085A/en
Publication of CN106430085A publication Critical patent/CN106430085A/en
Pending legal-status Critical Current

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261Processes for packaging MEMS devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/18Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/01Manufacture or treatment of microstructural devices or systems in or on a substrate

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

The invention discloses a protection method for MEMS pressure sensor packaging. Isolated packaging is carried out through adoption of gel, silicone oil and poly-p-xylene. The method comprises the steps of filling a core body equipped with a pressure sensor chip with a filling medium, and carrying out isolated protection on the pressure sensor chip and leads; and growing a layer of poly-p-xylene on a surface formed by the filling medium. Through application of above-mentioned mode, according to the protection method for the MEMS pressure sensor packaging provided by the invention, pollution of external moisture, ions and so on can be effective insulated; the filling medium can be effectively protected; when the pressure is changed, the pressure sensor chip and the leads connected with a shell are prevented from being damaged due to expansion of the air entering the medium, wherein the expansion results from the fact that the air pressure is reduced too fast; further the MEMS pressure sensor packaging is prevented from being damaged; and functions that the sensor core body is pollution resistant and transmits the pressure precisely are effectively realized. The technology is simple and the cost is low, so the production cost of the sensor can be effectively reduced.

Description

A kind of guard method of MEMS pressure sensor encapsulation
Technical field
The present invention relates to integrated antenna package field, more particularly, to a kind of guard method of MEMS pressure sensor encapsulation.
Background technology
In the encapsulation process of MEMS pressure sensor, oil-filled and convoluted diaphragm mode is usually used and carries out pressure transducer The protection of chip, but because this technical matters is complex and relatively costly, for the cost of product will be increased in commercial production.
In addition, chip list cake Silica hydrogel guard method although chip can be protected not to be subject to steam, ion, dust Deng contamination, but can suddenly diminish because of ambient atmos pressure in use, cause the gas entering in Silica hydrogel in environment under high pressure Expanding occurs in body, and leads to gel to produce the phenomenon of bubbling, the electrical connection performance of impact lead.
Content of the invention
The invention mainly solves the technical problem of providing a kind of guard method of MEMS pressure sensor encapsulation, adopt The core body of MEMS pressure sensor encapsulation instills that to grow a strata xylol on filling medium, and the surface being generated at it thin Film, is stained with completely cutting off extraneous steam, ion etc., and can effectively protect filling medium, it is to avoid in pressure change, air pressure drop Low lead to soon very much in medium enter air expansion, damage pressure sensor chip and with cage connection lead, and then protect MEMS pressure sensor encapsulation will not destroy, and have effectively achieved sensor core stain resistant, the function of the accurate transmission of pressure.By In process is simple, with low cost, the production cost of sensor can be effectively reduced.
For solving above-mentioned technical problem, one aspect of the present invention is:A kind of MEMS pressure sensor is provided The guard method of encapsulation, carries out insulation package using gel, silicone oil and Parylene to chip, the method includes:
Using filled media, filling is carried out to the core body being provided with pressure sensor chip, pressure sensor chip and lead are entered Row insulation blocking;
The superficial growth one strata xylol being formed in described filled media.
In a preferred embodiment of the present invention, described Parylene growth technique is typical vacuum electrode process, Can be selected for other distinct temperature growth conditionss, form dense film on described filled media surface, for MEMS pressure sensor Chip and the protection of surface filled media.
In a preferred embodiment of the present invention, the thickness of described dense film is less than 1 millimeter.
In a preferred embodiment of the present invention, described filled media is Silica hydrogel, polymethylphenyl siloxane fluid, methyl-silicone oil or olive Olive oil.
The invention has the beneficial effects as follows:A kind of guard method of MEMS pressure sensor encapsulation that the present invention provides, adopts Process is simple, with low cost, be suitable for batch production, can strengthen MEMS pressure sensor core body stain resistant ability and realize press The accurate transmission of power.
Brief description
For the technical scheme being illustrated more clearly that in the embodiment of the present invention, will make to required in embodiment description below Accompanying drawing be briefly described it should be apparent that, drawings in the following description are only some embodiments of the present invention, for For those of ordinary skill in the art, on the premise of not paying creative work, can also be obtained other according to these accompanying drawings Accompanying drawing, wherein:
Fig. 1 is an a kind of preferred embodiment typical MEMS pressure of the guard method of MEMS pressure sensor of present invention encapsulation The generalized section of sensor encapsulation;
Fig. 2 is an a kind of preferred embodiment typical MEMS pressure of the guard method of MEMS pressure sensor of present invention encapsulation The structural representation of sensor encapsulation;
Fig. 3 is an a kind of preferred embodiment MEMS pressure sensor of the guard method of MEMS pressure sensor of present invention encapsulation Encapsulation pours into the generalized section after filling medium;
Fig. 4 is an a kind of preferred embodiment MEMS pressure sensor of the guard method of MEMS pressure sensor of present invention encapsulation Generalized section after encapsulation growth Parylene.
Specific embodiment
The enforcement it is clear that described will be clearly and completely described to the technical scheme in the embodiment of the present invention below Example is only a part of embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, this area is common All other embodiment that technical staff is obtained under the premise of not making creative work, broadly falls into the model of present invention protection Enclose.
As Figure 1-4, the embodiment of the present invention includes:
A kind of guard method of MEMS pressure sensor encapsulation, is isolated to chip using gel, silicone oil and Parylene Encapsulation, the method includes:
Using filled media, filling is carried out to the core body being provided with pressure sensor chip, pressure sensor chip and lead are entered Row insulation blocking;
The superficial growth one strata xylol being formed in described filled media.
Wherein, described Parylene growth technique is typical vacuum electrode process, also can be selected for the life of other distinct temperature Elongate member, forms dense film on described filled media surface, for MEMS pressure sensor chip and surface filled media Protection.
Further, the thickness of described dense film is less than 1 millimeter.
Further, described filled media is Silica hydrogel, polymethylphenyl siloxane fluid, methyl-silicone oil or olive oil.
Wherein, Fig. 1 is the generalized section of typical MEMS pressure sensor encapsulation in the present invention, and 1a, 1b press for MEMS Force transducer shell, 2 is MEMS pressure sensor chip;MEMS pressure sensor chip is fixed on outer casing bottom by glue 3;Outward The lead 6 that shell extraction electrode 4 is formed by lead key closing process with MEMS pressure sensor chip electrode 5 is connected.The knot of encapsulation Composition is as shown in Figure 2.
In order to protect MEMS pressure sensor chip and connecting lead wire, in the cavity pocket of outer cover loading pressure sensor chip Pour into filling medium 7, as shown in Figure 3.If from Silica hydrogel as filling medium, needing to wait for gel room temperature or heating cure; If from oil mediums such as silicone oil, can direct growth Parylene.
Gas due to when ambient pressure changes to low pressure, entering filling medium 7 from high pressure has little time to arrange under low pressure Go out and can expand, impact pressure transducer performance, Silica hydrogel solidification after or oiliness filling medium filling finish after, make Form one layer of parylene film 8 with typical vacuum electrode process on filled media surface and shell top layer, as shown in Figure 4. The vacuum growing environment of Parylene makes the gas in filling medium discharge, and the parylene film 8 on surface makes filling be situated between Matter 7 is completely isolated with outside air, for the protection of MEMS pressure sensor chip and surface filled media.
In sum, the invention provides a kind of guard method of MEMS pressure sensor encapsulation, have Parylene The filling medium of protective layer can prevent filling protection medium during pressure effect from being affected by external pressure with external environs And destroyed, be furthermore possible to effectively to increase the water vapor on filled media surface, ion stain ability, have effectively achieved Sensor stain resistant, the function of the accurate transmission of pressure, and the process is simple adopting, with low cost, it is suitable for batch production.
The foregoing is only embodiments of the invention, not thereby limit the present invention the scope of the claims, every using this Equivalent structure or equivalent flow conversion that bright description is made, or directly or indirectly it is used in the technology neck of other correlations Domain, is included within the scope of the present invention.

Claims (4)

1. the guard method of a kind of MEMS pressure sensor encapsulation, using gel, silicone oil and Parylene chip is carried out every From encapsulation it is characterised in that the method includes:
Using filled media, filling is carried out to the core body being provided with pressure sensor chip, pressure sensor chip and lead are entered Row insulation blocking;
The superficial growth one strata xylol being formed in described filled media.
2. the guard method of MEMS pressure sensor encapsulation according to claim 1 is it is characterised in that described gather to diformazan Benzene growth technique is typical vacuum electrode process, also can be selected for other distinct temperature growth conditionss, on described filled media surface Form dense film, for the protection of MEMS pressure sensor chip and surface filled media.
3. the guard method of MEMS pressure sensor according to claim 2 encapsulation is it is characterised in that described dense film Thickness be less than 1 millimeter.
4. the guard method of MEMS pressure sensor according to claim 1 encapsulation is it is characterised in that described filled media For Silica hydrogel, polymethylphenyl siloxane fluid, methyl-silicone oil or olive oil.
CN201611125109.3A 2016-12-09 2016-12-09 Protection method for MEMS pressure sensor packaging Pending CN106430085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201611125109.3A CN106430085A (en) 2016-12-09 2016-12-09 Protection method for MEMS pressure sensor packaging

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201611125109.3A CN106430085A (en) 2016-12-09 2016-12-09 Protection method for MEMS pressure sensor packaging

Publications (1)

Publication Number Publication Date
CN106430085A true CN106430085A (en) 2017-02-22

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Country Status (1)

Country Link
CN (1) CN106430085A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107894297A (en) * 2017-11-07 2018-04-10 无锡必创传感科技有限公司 A kind of pressure sensor chip and its manufacture method
CN108020356A (en) * 2017-11-27 2018-05-11 江西新力传感科技有限公司 A kind of MEMS pressure sensor and its method for packing

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6550337B1 (en) * 2000-01-19 2003-04-22 Measurement Specialties, Inc. Isolation technique for pressure sensing structure
US20080066550A1 (en) * 2003-08-27 2008-03-20 Shay Kaplan Method for protecting resonating sensors and protected resonating sensors
US20090001487A1 (en) * 2007-06-29 2009-01-01 Fujitsu Limited Packaged device and method of manufacturing the same
CN102539029A (en) * 2012-02-29 2012-07-04 上海交通大学 Three-dimensional fluid stress sensor based on flexible MEMS (microelectromechanical system) technology and array thereof
CN103257007A (en) * 2012-02-17 2013-08-21 苏州敏芯微电子技术有限公司 Pressure sensor dielectric medium isolation packaging structure and packaging method of same
CN204128731U (en) * 2014-09-26 2015-01-28 深圳瑞德感知科技有限公司 A kind of MEMS oil-filled pressure transducer
CN105203249A (en) * 2014-06-19 2015-12-30 富士电机株式会社 Double diaphragm type pressure sensor
CN205642678U (en) * 2016-05-06 2016-10-12 浙江树人大学 Multi -seal type pressure sensor

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6550337B1 (en) * 2000-01-19 2003-04-22 Measurement Specialties, Inc. Isolation technique for pressure sensing structure
US20080066550A1 (en) * 2003-08-27 2008-03-20 Shay Kaplan Method for protecting resonating sensors and protected resonating sensors
US20090001487A1 (en) * 2007-06-29 2009-01-01 Fujitsu Limited Packaged device and method of manufacturing the same
CN103257007A (en) * 2012-02-17 2013-08-21 苏州敏芯微电子技术有限公司 Pressure sensor dielectric medium isolation packaging structure and packaging method of same
CN102539029A (en) * 2012-02-29 2012-07-04 上海交通大学 Three-dimensional fluid stress sensor based on flexible MEMS (microelectromechanical system) technology and array thereof
CN105203249A (en) * 2014-06-19 2015-12-30 富士电机株式会社 Double diaphragm type pressure sensor
CN204128731U (en) * 2014-09-26 2015-01-28 深圳瑞德感知科技有限公司 A kind of MEMS oil-filled pressure transducer
CN205642678U (en) * 2016-05-06 2016-10-12 浙江树人大学 Multi -seal type pressure sensor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107894297A (en) * 2017-11-07 2018-04-10 无锡必创传感科技有限公司 A kind of pressure sensor chip and its manufacture method
CN107894297B (en) * 2017-11-07 2020-02-18 无锡必创传感科技有限公司 Pressure sensor chip and manufacturing method thereof
CN108020356A (en) * 2017-11-27 2018-05-11 江西新力传感科技有限公司 A kind of MEMS pressure sensor and its method for packing

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Application publication date: 20170222