CN106098816A - A kind of cadmium telluride diaphragm solar battery and preparation method thereof - Google Patents

A kind of cadmium telluride diaphragm solar battery and preparation method thereof Download PDF

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Publication number
CN106098816A
CN106098816A CN201610550838.7A CN201610550838A CN106098816A CN 106098816 A CN106098816 A CN 106098816A CN 201610550838 A CN201610550838 A CN 201610550838A CN 106098816 A CN106098816 A CN 106098816A
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layer
cadmium telluride
refractive index
solar battery
inhibition
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李艺明
邓国云
李�浩
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Yancheng Plante New Energy Co Ltd
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Yancheng Plante New Energy Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/543Solar cells from Group II-VI materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

The present invention relates to technical field of solar batteries.The invention discloses a kind of cadmium telluride diaphragm solar battery, including glass substrate, and set gradually a laminated construction on the glass substrate along the direction away from glass substrate, transparency conducting layer, cushion, n-type semiconductor layer, p-type semiconductor layer, back contact and dorsum electrode layer, described laminated construction includes an inhibition layer and a dielectric layer, described inhibition layer is arranged on the glass substrate, described dielectric layer is arranged between inhibition layer and transparency conducting layer, described inhibition layer contains Si and O element, this inhibition layer is possibly together with Al, at least one element and containing Li in B, at least one element in K, described inhibition layer and dielectric layer have light transmission.The invention also discloses the preparation method of a kind of cadmium telluride diaphragm solar battery.The present invention arranges a laminated construction, as the front contact of cadmium telluride diaphragm solar battery, improves the short circuit current of cadmium telluride diaphragm solar battery.

Description

A kind of cadmium telluride diaphragm solar battery and preparation method thereof
Technical field
The invention belongs to technical field of thin-film solar, more particularly to a kind of cadmium telluride diaphragm solar battery and Its preparation method.
Background technology
Along with the shortage of global warming, the deterioration of the ecological environment and conventional energy resource, increasing country starts energetically Development solar utilization technique.Solar energy power generating is the clean energy resource of zero-emission, has safe and reliable, noiselessness, without dirty The advantage such as dye, resource is inexhaustible, the construction period is short, length in service life, thus receive much concern.Cadmium telluride is a kind of direct band gap P-type semiconductor material, its absorptance is high.Cadmium telluride film solar cells has cost as the hull cell of a new generation The advantages such as low, stable performance, capability of resistance to radiation is strong, the low light level also can generate electricity, its conversion efficiency is very in thin-film solar cells High, the conversion ratio of current laboratory is more than 22%.
As it is shown in figure 1, traditional cadmium telluride diaphragm solar battery structure is followed successively by: substrate 1, transparency conducting layer 2, slow Rush layer 3, Window layer 4, cadmium telluride light absorbing zone 5, back contact 6 and dorsum electrode layer 7.If substrate 1 is glass substrate Time, when transparency conducting layer 2 is carried out heat treatment, the sodium ion in glass substrate 1 can diffuse into transparency conducting layer 2 In, this can cause the decline of transparency conducting layer 2 performance;When depositing Window layer 4, cadmium telluride light absorbing zone on glass substrate 1 5 and the follow-up heat treatment to light absorbing zone 5, these all can make the sodium ion in glass substrate 1 diffuse into cadmium telluride light In absorbed layer 5, this can cause the deterioration of thin-film solar cells performance, and the conversion efficiency making battery is reduced by this.Additionally, pass The short circuit current of the cadmium telluride diaphragm solar battery of system need to improve.
Summary of the invention
It is an object of the invention to provide one can avoid glass base in heat treatment process for solving the problems referred to above Sodium ion in plate can diffuse in film layer, thus improves the telluride of thin-film solar cells conversion efficiency and short circuit current Vestalium thin-film solar cell and preparation method thereof.
To this end, the invention discloses a kind of cadmium telluride diaphragm solar battery, including glass substrate, and along away from glass The direction of substrate sets gradually a laminated construction on the glass substrate, transparency conducting layer, cushion, n-type semiconductor layer, p-type Semiconductor layer, back contact and dorsum electrode layer, described laminated construction includes an inhibition layer and a dielectric layer, and described inhibition layer sets Putting on the glass substrate, described dielectric layer is arranged between inhibition layer and transparency conducting layer, and described inhibition layer contains Si and O unit Element, this inhibition layer is situated between possibly together with at least one element in Al, B with containing at least one element in Li, K, described inhibition layer and electricity Matter layer has light transmission.
Further, the gross thickness of the described laminated construction gross thickness less than 1000nm, preferably laminated construction is less than The gross thickness of 500nm, more preferably laminated construction is less than 200nm.
Further, described inhibition layer possibly together with at least one element in Mg, Ca, Sr, Ba, preferably possibly together with Mg and/ Or Ca element.
Further, described dielectric layer is single layer structure, and the refractive index of described dielectric layer is less than 1.7, and preferably electricity is situated between The refractive index of matter layer is less than 1.6.
Further, described dielectric layer is multiple structure, and described multiple structure is by high refractive index material layer and low folding Penetrating the alternately laminated composition of rate material layer, the refractive index of described high refractive index material layer is more than 1.75, preferably high-index material The refractive index of layer is more than 1.85, and the refractive index of described low refractive index material layer is less than 1.7, the preferably less than refraction of refractive index material Rate is less than 1.6.
Further, described n-type semiconductor layer is cadmium sulfide layer or cadmium sulfide zinc layers, and described p-type semiconductor layer is telluride Cadmium layer, cadmium telluride zinc layers or telluride zinc layers, described back contact is the cadmium-telluride layer of doping, the telluride zinc layers of doping, doping Cadmium telluride zinc layers, rich in the film layer of tellurium element or tellurium film layer, the adulterant in described back contact is copper, nitrogen element, the described back of the body Electrode layer is at least one in copper, gold, molybdenum, aluminum, silver.
Further, described low refractive index material layer is silicon oxide, silicon oxynitride, oxidation sial, silicon oxide boron, Afluon (Asta) Or their any combination, described high refractive index material layer is zinc oxide, stannum oxide, titanium oxide, silicon nitride, niobium oxide, oxidation Tantalum, zirconium oxide, yittrium oxide, magnesium zinc or their any combination.
Further, described transparency conducting layer is cadmium stannate, Aska-Rid. indium, Al-Doped ZnO, gallium-doped zinc oxide, indium-doped oxygen Change zinc, tin-doped indium oxide, fluorine doped tin oxide, antimony doped tin oxide, mix in iodine stannum oxide, money base transparency conducting layer at least one. Described cushion is stannum oxide, zinc oxide, magnesium zinc, aluminium oxide, zinc-tin oxide, Indium sesquioxide., titanium oxide, niobium oxide, oxidation At least one in tantalum, silicon nitride.
The invention also discloses the preparation method of a kind of cadmium telluride diaphragm solar battery, comprise the steps
S1, prepares glass substrate;
S2, is sequentially prepared a laminated construction, transparency conducting layer, cushion, n along the direction away from glass substrate on the glass substrate Type semiconductor layer, p-type semiconductor layer, back contact and dorsum electrode layer, described laminated construction includes an inhibition layer and an electrolyte Layer, described inhibition layer prepare on the glass substrate, described dielectric layer prepare between inhibition layer and transparency conducting layer, described in press down Preparative layer contains Si and O element, and this inhibition layer is possibly together with at least one element in Al, B with containing at least one element in Li, K, institute State inhibition layer and dielectric layer has light transmission.
Further, the gross thickness of the described laminated construction gross thickness less than 1000nm, preferably laminated construction is less than The gross thickness of 500nm, more preferably laminated construction is less than 200nm.
Further, described inhibition layer possibly together with at least one element in Mg, Ca, Sr, Ba, preferably possibly together with Mg and/ Or Ca element.
Further, described dielectric layer is single layer structure, and the refractive index of described dielectric layer is less than 1.7, and preferably electricity is situated between The refractive index of matter layer is less than 1.6.
Further, described dielectric layer is multiple structure, and described multiple structure is by high refractive index material layer and low folding Penetrating the alternately laminated composition of rate material layer, the refractive index of described high refractive index material layer is more than 1.75, preferably high-index material The refractive index of layer is more than 1.85, and the refractive index of described low refractive index material layer is less than 1.7, the preferably less than refraction of refractive index material Rate is less than 1.6.
The cadmium telluride diaphragm solar battery using the present invention is fabricated to a kind of photovoltaic module, and described photovoltaic module includes: The cadmium telluride diaphragm solar battery of multiple present invention is adjacent to substrate;And back of the body covering, adjacent to the plurality of present invention Cadmium telluride diaphragm solar battery.And use the cadmium telluride diaphragm solar battery of the present invention to produce electric method, institute The method of stating includes: use up the cadmium telluride diaphragm solar battery irradiating the present invention, to produce photoelectric current;And collect the light produced Electric current.
The Advantageous Effects of the present invention:
The present invention arranges a laminated construction on the glass substrate, and described laminated construction includes an inhibition layer and a dielectric layer;Institute State the sodium ion diffusion that inhibition layer is used to suppress in glass substrate, make the sodium ion in glass be not diffuse into electrically conducting transparent In layer, n-type semiconductor layer and p-type semiconductor layer;B element in inhibition layer can make inhibition layer tolerate higher temperature, it is possible to makes Inhibition layer is more firm with the bonding of glass substrate;When the sodium ion in glass substrate be diffused in inhibition layer can with in inhibition layer Li, K element produces mixed base effectiveness, thus suppresses the further diffusion of sodium ion;The alkaline-earth metal unit contained in inhibition layer The diffusion of sodium ion can be played further inhibitory action by element (such as Mg, Ca, Sr, Ba), thus strengthens inhibition layer to glass base The inhibitory action of sodium ion diffusion in plate, the alkali earth metal in inhibition layer can improve the mechanical resistant of suppression tunic layer simultaneously Can be with the performance of chemically-resistant effect.Dielectric layer in the laminated construction of the present invention has single layer structure or multiple structure;Described Dielectric layer can make more sunlight incide in cadmium telluride diaphragm solar battery with the combination of inhibition layer, thus improves tellurium The short circuit current of cadmium thin-film solar cells, thus improve the performance of cadmium telluride diaphragm solar battery.
Accompanying drawing explanation
Fig. 1 is the structural representation of traditional cadmium telluride diaphragm solar battery;
Fig. 2 is a kind of structural representation of the cadmium telluride diaphragm solar battery of the present invention;
Fig. 3 is the another kind of structural representation of the cadmium telluride diaphragm solar battery of the present invention.
Detailed description of the invention
In conjunction with the drawings and specific embodiments, the present invention is further described.
As it is well known that form cadmium telluride diaphragm solar battery on the glass substrate, carrying out glass during heat treatment Sodium ion in substrate can diffuse in each film layer of cadmium telluride diaphragm solar battery, and this can cause Cadimium telluride thin film too The decline of sun energy battery performance.The invention provides a kind of cadmium telluride diaphragm solar battery, first form one on the glass substrate Laminated construction, described laminated construction can effectively suppress the sodium ion in glass substrate to diffuse into cadmium telluride diaphragm solar In each film layer of battery, the most described laminated construction can effectively facilitate more incident light beam strikes to cadmium telluride absorbed layer In, the short circuit current of cadmium telluride thin-film battery can be improved, thus obtain and there is high performance cadmium telluride diaphragm solar battery.
As shown in Figures 2 and 3, a kind of cadmium telluride diaphragm solar battery, including glass substrate 1, and along away from glass A laminated construction that the direction of substrate 1 is successively set on glass substrate 1, transparency conducting layer 2, cushion 3, n-type semiconductor layer 4, p-type semiconductor layer 5, back contact 6 and dorsum electrode layer 7, described laminated construction includes inhibition layer 8 and a dielectric layer, institute Stating inhibition layer 8 to be arranged on glass substrate 1, described dielectric layer is arranged between inhibition layer 8 and transparency conducting layer 2, described in press down Preparative layer 8 is containing Si and O element, and this inhibition layer 8 is possibly together with at least one element in Al, B and contains at least one element in Li, K, Described inhibition layer 8 and dielectric layer have light transmission.
Concrete, the gross thickness of the described laminated construction gross thickness less than 1000nm, preferably laminated construction is less than 500nm, More preferably the gross thickness of laminated construction be less than 200nm, described inhibition layer 8 possibly together with at least one element in Mg, Ca, Sr, Ba, Preferably possibly together with Mg and/or Ca element, described n-type semiconductor layer 4 is cadmium sulfide layer or cadmium sulfide zinc layers, described p-type semiconductor Layer 5 is cadmium-telluride layer, cadmium telluride zinc layers or telluride zinc layers, and described back contact 6 is the cadmium-telluride layer of doping, the zinc telluridse of doping Layer, the cadmium telluride zinc layers of doping, rich in the film layer of tellurium element or tellurium film layer, the adulterant in described back contact 6 is copper, nitrogen unit Element, described dorsum electrode layer 7 is at least one in copper, gold, molybdenum, aluminum, silver, and described transparency conducting layer 2 is cadmium stannate, Aska-Rid. Indium, Al-Doped ZnO, gallium-doped zinc oxide, indium-doped zinc oxide, tin-doped indium oxide, fluorine doped tin oxide, antimony doped tin oxide, mix iodine oxidation At least one in stannum, money base transparency conducting layer.Described cushion 3 is stannum oxide, zinc oxide, magnesium zinc, aluminium oxide, oxidation At least one in zinc-tin, Indium sesquioxide., titanium oxide, niobium oxide, tantalum oxide, silicon nitride.
Further, as in figure 2 it is shown, described dielectric layer is single layer structure, single layer structure is low refractive index material layer 9, The refractive index of described low refractive index material layer 9 is less than 1.7, and the preferably less than refractive index of refractive index material 9 is less than 1.6.
Further, as it is shown on figure 3, described dielectric layer is multiple structure, described multiple structure is by high index of refraction material The bed of material 10 and the alternately laminated composition of low refractive index material layer 9, the refractive index of described high refractive index material layer 10 is more than 1.75, excellent Selecting the refractive index of high refractive index material layer 10 more than 1.85, the refractive index of described low refractive index material layer 9 is less than 1.7, preferably less than The refractive index of refractive index material 9 is less than 1.6.Dielectric layer shown in Fig. 3 is 2 Rotating fields, certainly, in other embodiments, It can be more than 2 layers.
Concrete, described low refractive index material layer 9 is silicon oxide, silicon oxynitride, oxidation sial, silicon oxide boron, Afluon (Asta) Or their any combination, described high refractive index material layer 10 is zinc oxide, stannum oxide, titanium oxide, silicon nitride, niobium oxide, oxygen Change tantalum, zirconium oxide, yittrium oxide, magnesium zinc or their any combination,
The invention also discloses the preparation method of a kind of cadmium telluride diaphragm solar battery, comprise the steps
S1, prepares glass substrate 1;
S2, is sequentially prepared a laminated construction, transparency conducting layer 2, buffering on glass substrate 1 along the direction away from glass substrate 1 Layer 3, n-type semiconductor layer 4, p-type semiconductor layer 5, back contact 6 and dorsum electrode layer 7, described laminated construction includes an inhibition layer 8 With a dielectric layer, described inhibition layer 8 is prepared on glass substrate 1, and described dielectric layer is prepared at inhibition layer 8 and electrically conducting transparent Between layer 2, described inhibition layer 8 is containing Si and O element, and this inhibition layer 8 is possibly together with at least one element in Al, B with containing Li, K In at least one element, described inhibition layer 8 and dielectric layer have light transmission.
Hereinafter relate to embodiment and comparative example, be all on clean glass substrate 1, sequentially form each film layer.
Embodiment 1
Form the inhibition layer 8 of one layer of 35nm on glass substrate 1 surface, described inhibition layer 8 is containing Si, O, B, Li element;Then exist The silica coating of 50nm is formed as low refractive index material layer 9 in inhibition layer 8;Then formed on silica coating 9 The aluminium-doped zinc oxide film layer of 400nm is as transparency conducting layer 2;Then on aluminium-doped zinc oxide film layer 2, form the oxygen of 70nm Change zinc film layer as cushion 3;Then on zinc oxide film 3, the cadmium sulphide film layer of 100nm is formed as n-type semiconductor layer 4; Then on cadmium sulphide film layer 4, the cadmium telluride film layer of 2um is formed as p-type semiconductor layer 5;Then cadmium telluride film layer 5 is carried out Caddy (Cleary) steam heating;Then on cadmium telluride film layer 5, the Copper-cladding Aluminum Bar cadmium telluride film layer of 100nm is formed as back contact 6; Then on Copper-cladding Aluminum Bar cadmium telluride film layer 6,300nm metal molybdenum layer is formed as dorsum electrode layer 7.The Cadimium telluride thin film of the present embodiment The structure of solaode is as shown in Figure 2.
Through test, the short circuit current of the cadmium telluride diaphragm solar battery of the present embodiment is 26.3mA/cm2
Embodiment 2
Form the inhibition layer 8 of one layer of 40nm on glass substrate 1 surface, described inhibition layer 8 is containing Si, O, B, K element;Then pressing down The silica coating of 60nm is formed as low refractive index material layer 9 on preparative layer 8;Then formed on silica coating 9 The aluminium-doped zinc oxide film layer of 400nm is as transparency conducting layer 2;Then on aluminium-doped zinc oxide film layer 2, form the oxygen of 60nm Change zinc film layer as cushion 3;Then on zinc oxide film 3, the cadmium sulphide film layer of 110nm is formed as n-type semiconductor layer 4; Then on cadmium sulphide film layer 4, the cadmium telluride film layer of 2um is formed as p-type semiconductor layer 5;Then cadmium telluride film layer 5 is carried out Caddy (Cleary) steam heating;Then on cadmium telluride film layer 5, the Copper-cladding Aluminum Bar cadmium telluride film layer of 80nm is formed as back contact 6; Then on Copper-cladding Aluminum Bar cadmium telluride film layer 6,350nm metal molybdenum layer is formed as dorsum electrode layer 7.
Through test, the short circuit current of the cadmium telluride diaphragm solar battery of the present embodiment is 26.8mA/cm2
Embodiment 3
Form the inhibition layer 8 of one layer of 30nm on glass substrate 1 surface, described inhibition layer 8 is containing Si, O, B, K element;Then pressing down The titanium oxide film layer of 10nm is formed as high refractive index material layer 10 on preparative layer 8;Then formed in titanium oxide film layer 10 The silica coating of 120nm is as low refractive index material layer 9;Then on silica coating 9, form the aluminum doping of 400nm Zinc oxide film is as transparency conducting layer 2;Then on aluminium-doped zinc oxide film layer 2, the zinc oxide film of 60nm is formed as slow Rush layer 3;Then on zinc oxide film 3, the cadmium sulphide film layer of 90nm is formed as n-type semiconductor layer 4;Then at cadmium sulphide film The cadmium telluride film layer of 1.9um is formed as p-type semiconductor layer 5 on layer 4;Then cadmium telluride film layer 5 is carried out Caddy (Cleary) steam heat Process;Then on cadmium telluride film layer 5, the Copper-cladding Aluminum Bar cadmium telluride film layer of 80nm is formed as back contact 6;Then at Copper-cladding Aluminum Bar 350nm metal molybdenum layer is formed as dorsum electrode layer 7 on cadmium telluride film layer 6.The cadmium telluride diaphragm solar battery of the present embodiment Structure is as shown in Figure 3.
Through test, the short circuit current of the cadmium telluride diaphragm solar battery of the present embodiment is 27.3mA/cm2
Embodiment 4
Form the inhibition layer 8 of one layer of 30nm on glass substrate 1 surface, described inhibition layer 8 is containing Si, O, Al, Mg, K element;Then Inhibition layer 8 forms the titanium oxide film layer of 10nm as high refractive index material layer 10;Then in titanium oxide film layer 10 Form the silica coating of 120nm as low refractive index material layer 9;Then on silica coating 9, form the aluminum of 450nm Doping zinc-oxide film layer is as transparency conducting layer 2;Then the tin oxide film layer forming 60nm on aluminium-doped zinc oxide film layer 2 is made For cushion 3;Then on tin oxide film layer 3, the cadmium zinc sulfide film layer of 90nm is formed as n-type semiconductor layer 4;Then at sulfur The cadmium telluride film layer of 2.1um is formed as p-type semiconductor layer 5 on cadmium zinc film layer 4;Then cadmium telluride film layer 5 is carried out chlorination Cadmium steam heating;Then on cadmium telluride film layer 5, the Copper-cladding Aluminum Bar zinc telluridse film layer of 80nm is formed as back contact 6;Then Copper-cladding Aluminum Bar zinc telluridse film layer 6 forms 350nm metal molybdenum layer as dorsum electrode layer 7.
Through test, the short circuit current of the cadmium telluride diaphragm solar battery of the present embodiment is 27.5mA/cm2
Embodiment 5
Form the inhibition layer 8 of one layer of 30nm on glass substrate 1 surface, described inhibition layer 8 is containing Si, O, Al, Ca, K element;Then Inhibition layer 8 forms the zinc oxide film layer of 20nm as high refractive index material layer 10;Then on zinc oxide film layer 10 Form the silica coating of 90nm as low refractive index material layer 9;Then on silica coating 9, form the stannum of 300nm Acid cadmium film layer is as transparency conducting layer 2;Then on cadmium stannate film layer 2, the tin oxide film layer of 70nm is formed as cushion 3;Connect And on tin oxide film layer 3, form the cadmium zinc sulfide film layer of 90nm as n-type semiconductor layer 4;Then on cadmium zinc sulfide film layer 4 Form the cadmium telluride film layer of 2.1um as p-type semiconductor layer 5;Then cadmium telluride film layer 5 is carried out Caddy (Cleary) steam heating; Then on cadmium telluride film layer 5, the N doping zinc telluridse film layer of 80nm is formed as back contact 6;Then at N doping zinc telluridse 350nm metal molybdenum layer is formed as dorsum electrode layer 7 on film layer 6.
Through test, the short circuit current of the cadmium telluride diaphragm solar battery of the present embodiment is 26.9mA/cm2
Embodiment 6
Form the inhibition layer 8 of one layer of 30nm on glass substrate 1 surface, described inhibition layer 8 is containing Si, O, Al, B, Mg, Li, K unit Element;Then in inhibition layer 8, the zinc oxide film layer of 20nm is formed as high refractive index material layer 10;Then at zinc oxide film The silicon oxide aluminum membranous layer of 90nm is formed as low refractive index material layer 9 on layer 10;Then formed on silicon oxide aluminum membranous layer 9 The cadmium stannate film layer of 300nm is as transparency conducting layer 2;Then on cadmium stannate film layer 2, form the tin oxide film layer conduct of 70nm Cushion 3;Then on tin oxide film layer 3, the cadmium zinc sulfide film layer of 100nm is formed as n-type semiconductor layer 4;Then in sulfuration The cadmium telluride film layer of 1.8um is formed as p-type semiconductor layer 5 on cadmium zinc film layer 4;Then cadmium telluride film layer 5 is carried out Caddy (Cleary) Steam heating;Then on cadmium telluride film layer 5, the N doping zinc telluridse film layer of 100nm is formed as back contact 6;Then exist 200nm metal copper layer is formed as dorsum electrode layer 7 on N doping zinc telluridse film layer 6.
Through test, the short circuit current of the cadmium telluride diaphragm solar battery of the present embodiment is 26.5mA/cm2
Comparative example 1
The aluminium-doped zinc oxide film layer of 400nm is formed as transparency conducting layer 2 on glass substrate 1 surface;Then adulterate at aluminum The zinc oxide film of 70nm is formed as cushion 3 on zinc oxide film 2;Then on zinc oxide film 3, form 100nm Cadmium sulphide film layer as Window layer 4;Then on cadmium sulphide film layer 4, the cadmium telluride film layer of 2um is formed as light absorbing zone 5 ´;Then cadmium telluride film layer 5 is carried out Caddy (Cleary) steam heating;Then the copper forming 100nm on cadmium telluride film layer 5 is mixed Miscellaneous cadmium telluride film layer is as back contact 6;Then on Copper-cladding Aluminum Bar cadmium telluride film layer 6,300nm metal molybdenum layer is formed as the back of the body Electrode layer 7.The structure of the cadmium telluride diaphragm solar battery of the present embodiment is as shown in Figure 1.
Through test, the short circuit current of the cadmium telluride diaphragm solar battery of the present embodiment is 23.3mA/cm2
From the above embodiments with the comparison of comparative example it can be seen that the present invention can improve the short of cadmium telluride thin-film battery Road electric current, it is thus achieved that there is high performance cadmium telluride diaphragm solar battery.
The laminated construction of the present invention applies also for silicon-based film solar cells, copper-indium-galliun-selenium film solar cell Lamina tecti glass, low radiation coated glass, DSSC and perovskite solaode etc..
Although specifically showing and describe the present invention in conjunction with preferred embodiment, but those skilled in the art should be bright In vain, in the spirit and scope of the present invention limited without departing from appended claims, in the form and details can be right The present invention makes a variety of changes, and is protection scope of the present invention.

Claims (11)

1. a cadmium telluride diaphragm solar battery, it is characterised in that: include glass substrate, and along the side away from glass substrate To the laminated construction set gradually on the glass substrate, transparency conducting layer, cushion, n-type semiconductor layer, p-type semiconductor layer, Back contact and dorsum electrode layer, described laminated construction includes an inhibition layer and a dielectric layer, and described inhibition layer is arranged on glass On substrate, described dielectric layer is arranged between inhibition layer and transparency conducting layer, and described inhibition layer contains Si and O element, and this presses down Preparative layer is possibly together with at least one element in Al, B with containing at least one element in Li, K, and described inhibition layer and dielectric layer have Light transmission.
Cadmium telluride diaphragm solar battery the most according to claim 1, it is characterised in that: the gross thickness of described laminated construction Less than 1000nm.
Cadmium telluride diaphragm solar battery the most according to claim 1, it is characterised in that: described inhibition layer possibly together with Mg, At least one element in Ca, Sr, Ba.
Cadmium telluride diaphragm solar battery the most according to claim 1, it is characterised in that: described dielectric layer is monolayer knot Structure, the refractive index of described dielectric layer is less than 1.7.
Cadmium telluride diaphragm solar battery the most according to claim 1, it is characterised in that: described dielectric layer is multilamellar knot Structure, described multiple structure is made up of high refractive index material layer and the alternately laminated of low refractive index material layer, described high index of refraction The refractive index of material layer is more than 1.75, and the refractive index of described low refractive index material layer is less than 1.7.
Cadmium telluride diaphragm solar battery the most according to claim 1, it is characterised in that: described n-type semiconductor layer is sulfur Cadmium layer or cadmium sulfide zinc layers, described p-type semiconductor layer is cadmium-telluride layer, cadmium telluride zinc layers or telluride zinc layers, described back contacts Cadmium-telluride layer that layer is doping, the telluride zinc layers of doping, the cadmium telluride zinc layers of doping, rich in the film layer of tellurium element or tellurium film layer, Adulterant in described back contact is copper, nitrogen element.
Cadmium telluride diaphragm solar battery the most according to claim 1, it is characterised in that: described low refractive index material layer is Silicon oxide, silicon oxynitride, oxidation sial, silicon oxide boron, Afluon (Asta) or their any combination, described high refractive index material layer is Zinc oxide, stannum oxide, titanium oxide, silicon nitride, niobium oxide, tantalum oxide, zirconium oxide, yittrium oxide, magnesium zinc or theirs is arbitrary Combination.
8. the preparation method of a cadmium telluride diaphragm solar battery, it is characterised in that: comprise the steps
S1, prepares glass substrate;
S2, is sequentially prepared a laminated construction, transparency conducting layer, cushion, n along the direction away from glass substrate on the glass substrate Type semiconductor layer, p-type semiconductor layer, back contact and dorsum electrode layer, described laminated construction includes an inhibition layer and an electrolyte Layer, described inhibition layer prepare on the glass substrate, described dielectric layer prepare between inhibition layer and transparency conducting layer, described in press down Preparative layer contains Si and O element, and this inhibition layer is possibly together with at least one element in Al, B with containing at least one element in Li, K, institute State inhibition layer and dielectric layer has light transmission.
The preparation method of cadmium telluride diaphragm solar battery the most according to claim 8, it is characterised in that: described inhibition layer Possibly together with at least one element in Mg, Ca, Sr, Ba.
The preparation method of cadmium telluride diaphragm solar battery the most according to claim 8, it is characterised in that: described electricity is situated between Matter layer is single layer structure, and the refractive index of described dielectric layer is less than 1.7.
The preparation method of 11. cadmium telluride diaphragm solar batteries according to claim 8, it is characterised in that: described electricity is situated between Matter layer is multiple structure, and described multiple structure is made up of high refractive index material layer and the alternately laminated of low refractive index material layer, The refractive index of described high refractive index material layer is more than 1.75, and the refractive index of described low refractive index material layer is less than 1.7.
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Application publication date: 20161109