CN106098816A - A kind of cadmium telluride diaphragm solar battery and preparation method thereof - Google Patents
A kind of cadmium telluride diaphragm solar battery and preparation method thereof Download PDFInfo
- Publication number
- CN106098816A CN106098816A CN201610550838.7A CN201610550838A CN106098816A CN 106098816 A CN106098816 A CN 106098816A CN 201610550838 A CN201610550838 A CN 201610550838A CN 106098816 A CN106098816 A CN 106098816A
- Authority
- CN
- China
- Prior art keywords
- layer
- cadmium telluride
- refractive index
- solar battery
- inhibition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 97
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 230000005764 inhibitory process Effects 0.000 claims abstract description 70
- 239000011521 glass Substances 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 238000010276 construction Methods 0.000 claims abstract description 33
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 24
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 210000001142 back Anatomy 0.000 claims abstract description 15
- 229910052796 boron Inorganic materials 0.000 claims abstract description 11
- 230000005540 biological transmission Effects 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 361
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 60
- 239000000463 material Substances 0.000 claims description 47
- 239000011787 zinc oxide Substances 0.000 claims description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 21
- 229910052725 zinc Inorganic materials 0.000 claims description 21
- 239000011701 zinc Substances 0.000 claims description 21
- 229910052700 potassium Inorganic materials 0.000 claims description 12
- 239000011777 magnesium Substances 0.000 claims description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 9
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical group [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 claims description 9
- 229910052744 lithium Inorganic materials 0.000 claims description 9
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052791 calcium Inorganic materials 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 239000002356 single layer Substances 0.000 claims description 7
- 229910052714 tellurium Inorganic materials 0.000 claims description 7
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 7
- UQMZPFKLYHOJDL-UHFFFAOYSA-N zinc;cadmium(2+);disulfide Chemical compound [S-2].[S-2].[Zn+2].[Cd+2] UQMZPFKLYHOJDL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052788 barium Inorganic materials 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 6
- 229910052712 strontium Inorganic materials 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- PGTXKIZLOWULDJ-UHFFFAOYSA-N [Mg].[Zn] Chemical compound [Mg].[Zn] PGTXKIZLOWULDJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 5
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- -1 yittrium oxide Chemical compound 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 241001132374 Asta Species 0.000 claims description 3
- AOQZCUVGSOYNCB-UHFFFAOYSA-N [B].[Si]=O Chemical compound [B].[Si]=O AOQZCUVGSOYNCB-UHFFFAOYSA-N 0.000 claims description 3
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- 239000003792 electrolyte Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 description 96
- 229960001296 zinc oxide Drugs 0.000 description 27
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 11
- 229910001415 sodium ion Inorganic materials 0.000 description 11
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 10
- 229910001887 tin oxide Inorganic materials 0.000 description 10
- 229910052793 cadmium Inorganic materials 0.000 description 9
- 238000005253 cladding Methods 0.000 description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 8
- 229910052750 molybdenum Inorganic materials 0.000 description 8
- 239000011733 molybdenum Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 6
- 239000002585 base Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229940071182 stannate Drugs 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical group OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Chemical compound [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 2
- CEKJAYFBQARQNG-UHFFFAOYSA-N cadmium zinc Chemical compound [Zn].[Cd] CEKJAYFBQARQNG-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical group 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000005987 sulfurization reaction Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 150000004772 tellurides Chemical group 0.000 description 1
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to technical field of solar batteries.The invention discloses a kind of cadmium telluride diaphragm solar battery, including glass substrate, and set gradually a laminated construction on the glass substrate along the direction away from glass substrate, transparency conducting layer, cushion, n-type semiconductor layer, p-type semiconductor layer, back contact and dorsum electrode layer, described laminated construction includes an inhibition layer and a dielectric layer, described inhibition layer is arranged on the glass substrate, described dielectric layer is arranged between inhibition layer and transparency conducting layer, described inhibition layer contains Si and O element, this inhibition layer is possibly together with Al, at least one element and containing Li in B, at least one element in K, described inhibition layer and dielectric layer have light transmission.The invention also discloses the preparation method of a kind of cadmium telluride diaphragm solar battery.The present invention arranges a laminated construction, as the front contact of cadmium telluride diaphragm solar battery, improves the short circuit current of cadmium telluride diaphragm solar battery.
Description
Technical field
The invention belongs to technical field of thin-film solar, more particularly to a kind of cadmium telluride diaphragm solar battery and
Its preparation method.
Background technology
Along with the shortage of global warming, the deterioration of the ecological environment and conventional energy resource, increasing country starts energetically
Development solar utilization technique.Solar energy power generating is the clean energy resource of zero-emission, has safe and reliable, noiselessness, without dirty
The advantage such as dye, resource is inexhaustible, the construction period is short, length in service life, thus receive much concern.Cadmium telluride is a kind of direct band gap
P-type semiconductor material, its absorptance is high.Cadmium telluride film solar cells has cost as the hull cell of a new generation
The advantages such as low, stable performance, capability of resistance to radiation is strong, the low light level also can generate electricity, its conversion efficiency is very in thin-film solar cells
High, the conversion ratio of current laboratory is more than 22%.
As it is shown in figure 1, traditional cadmium telluride diaphragm solar battery structure is followed successively by: substrate 1, transparency conducting layer 2, slow
Rush layer 3, Window layer 4, cadmium telluride light absorbing zone 5, back contact 6 and dorsum electrode layer 7.If substrate 1 is glass substrate
Time, when transparency conducting layer 2 is carried out heat treatment, the sodium ion in glass substrate 1 can diffuse into transparency conducting layer 2
In, this can cause the decline of transparency conducting layer 2 performance;When depositing Window layer 4, cadmium telluride light absorbing zone on glass substrate 1
5 and the follow-up heat treatment to light absorbing zone 5, these all can make the sodium ion in glass substrate 1 diffuse into cadmium telluride light
In absorbed layer 5, this can cause the deterioration of thin-film solar cells performance, and the conversion efficiency making battery is reduced by this.Additionally, pass
The short circuit current of the cadmium telluride diaphragm solar battery of system need to improve.
Summary of the invention
It is an object of the invention to provide one can avoid glass base in heat treatment process for solving the problems referred to above
Sodium ion in plate can diffuse in film layer, thus improves the telluride of thin-film solar cells conversion efficiency and short circuit current
Vestalium thin-film solar cell and preparation method thereof.
To this end, the invention discloses a kind of cadmium telluride diaphragm solar battery, including glass substrate, and along away from glass
The direction of substrate sets gradually a laminated construction on the glass substrate, transparency conducting layer, cushion, n-type semiconductor layer, p-type
Semiconductor layer, back contact and dorsum electrode layer, described laminated construction includes an inhibition layer and a dielectric layer, and described inhibition layer sets
Putting on the glass substrate, described dielectric layer is arranged between inhibition layer and transparency conducting layer, and described inhibition layer contains Si and O unit
Element, this inhibition layer is situated between possibly together with at least one element in Al, B with containing at least one element in Li, K, described inhibition layer and electricity
Matter layer has light transmission.
Further, the gross thickness of the described laminated construction gross thickness less than 1000nm, preferably laminated construction is less than
The gross thickness of 500nm, more preferably laminated construction is less than 200nm.
Further, described inhibition layer possibly together with at least one element in Mg, Ca, Sr, Ba, preferably possibly together with Mg and/
Or Ca element.
Further, described dielectric layer is single layer structure, and the refractive index of described dielectric layer is less than 1.7, and preferably electricity is situated between
The refractive index of matter layer is less than 1.6.
Further, described dielectric layer is multiple structure, and described multiple structure is by high refractive index material layer and low folding
Penetrating the alternately laminated composition of rate material layer, the refractive index of described high refractive index material layer is more than 1.75, preferably high-index material
The refractive index of layer is more than 1.85, and the refractive index of described low refractive index material layer is less than 1.7, the preferably less than refraction of refractive index material
Rate is less than 1.6.
Further, described n-type semiconductor layer is cadmium sulfide layer or cadmium sulfide zinc layers, and described p-type semiconductor layer is telluride
Cadmium layer, cadmium telluride zinc layers or telluride zinc layers, described back contact is the cadmium-telluride layer of doping, the telluride zinc layers of doping, doping
Cadmium telluride zinc layers, rich in the film layer of tellurium element or tellurium film layer, the adulterant in described back contact is copper, nitrogen element, the described back of the body
Electrode layer is at least one in copper, gold, molybdenum, aluminum, silver.
Further, described low refractive index material layer is silicon oxide, silicon oxynitride, oxidation sial, silicon oxide boron, Afluon (Asta)
Or their any combination, described high refractive index material layer is zinc oxide, stannum oxide, titanium oxide, silicon nitride, niobium oxide, oxidation
Tantalum, zirconium oxide, yittrium oxide, magnesium zinc or their any combination.
Further, described transparency conducting layer is cadmium stannate, Aska-Rid. indium, Al-Doped ZnO, gallium-doped zinc oxide, indium-doped oxygen
Change zinc, tin-doped indium oxide, fluorine doped tin oxide, antimony doped tin oxide, mix in iodine stannum oxide, money base transparency conducting layer at least one.
Described cushion is stannum oxide, zinc oxide, magnesium zinc, aluminium oxide, zinc-tin oxide, Indium sesquioxide., titanium oxide, niobium oxide, oxidation
At least one in tantalum, silicon nitride.
The invention also discloses the preparation method of a kind of cadmium telluride diaphragm solar battery, comprise the steps
S1, prepares glass substrate;
S2, is sequentially prepared a laminated construction, transparency conducting layer, cushion, n along the direction away from glass substrate on the glass substrate
Type semiconductor layer, p-type semiconductor layer, back contact and dorsum electrode layer, described laminated construction includes an inhibition layer and an electrolyte
Layer, described inhibition layer prepare on the glass substrate, described dielectric layer prepare between inhibition layer and transparency conducting layer, described in press down
Preparative layer contains Si and O element, and this inhibition layer is possibly together with at least one element in Al, B with containing at least one element in Li, K, institute
State inhibition layer and dielectric layer has light transmission.
Further, the gross thickness of the described laminated construction gross thickness less than 1000nm, preferably laminated construction is less than
The gross thickness of 500nm, more preferably laminated construction is less than 200nm.
Further, described inhibition layer possibly together with at least one element in Mg, Ca, Sr, Ba, preferably possibly together with Mg and/
Or Ca element.
Further, described dielectric layer is single layer structure, and the refractive index of described dielectric layer is less than 1.7, and preferably electricity is situated between
The refractive index of matter layer is less than 1.6.
Further, described dielectric layer is multiple structure, and described multiple structure is by high refractive index material layer and low folding
Penetrating the alternately laminated composition of rate material layer, the refractive index of described high refractive index material layer is more than 1.75, preferably high-index material
The refractive index of layer is more than 1.85, and the refractive index of described low refractive index material layer is less than 1.7, the preferably less than refraction of refractive index material
Rate is less than 1.6.
The cadmium telluride diaphragm solar battery using the present invention is fabricated to a kind of photovoltaic module, and described photovoltaic module includes:
The cadmium telluride diaphragm solar battery of multiple present invention is adjacent to substrate;And back of the body covering, adjacent to the plurality of present invention
Cadmium telluride diaphragm solar battery.And use the cadmium telluride diaphragm solar battery of the present invention to produce electric method, institute
The method of stating includes: use up the cadmium telluride diaphragm solar battery irradiating the present invention, to produce photoelectric current;And collect the light produced
Electric current.
The Advantageous Effects of the present invention:
The present invention arranges a laminated construction on the glass substrate, and described laminated construction includes an inhibition layer and a dielectric layer;Institute
State the sodium ion diffusion that inhibition layer is used to suppress in glass substrate, make the sodium ion in glass be not diffuse into electrically conducting transparent
In layer, n-type semiconductor layer and p-type semiconductor layer;B element in inhibition layer can make inhibition layer tolerate higher temperature, it is possible to makes
Inhibition layer is more firm with the bonding of glass substrate;When the sodium ion in glass substrate be diffused in inhibition layer can with in inhibition layer
Li, K element produces mixed base effectiveness, thus suppresses the further diffusion of sodium ion;The alkaline-earth metal unit contained in inhibition layer
The diffusion of sodium ion can be played further inhibitory action by element (such as Mg, Ca, Sr, Ba), thus strengthens inhibition layer to glass base
The inhibitory action of sodium ion diffusion in plate, the alkali earth metal in inhibition layer can improve the mechanical resistant of suppression tunic layer simultaneously
Can be with the performance of chemically-resistant effect.Dielectric layer in the laminated construction of the present invention has single layer structure or multiple structure;Described
Dielectric layer can make more sunlight incide in cadmium telluride diaphragm solar battery with the combination of inhibition layer, thus improves tellurium
The short circuit current of cadmium thin-film solar cells, thus improve the performance of cadmium telluride diaphragm solar battery.
Accompanying drawing explanation
Fig. 1 is the structural representation of traditional cadmium telluride diaphragm solar battery;
Fig. 2 is a kind of structural representation of the cadmium telluride diaphragm solar battery of the present invention;
Fig. 3 is the another kind of structural representation of the cadmium telluride diaphragm solar battery of the present invention.
Detailed description of the invention
In conjunction with the drawings and specific embodiments, the present invention is further described.
As it is well known that form cadmium telluride diaphragm solar battery on the glass substrate, carrying out glass during heat treatment
Sodium ion in substrate can diffuse in each film layer of cadmium telluride diaphragm solar battery, and this can cause Cadimium telluride thin film too
The decline of sun energy battery performance.The invention provides a kind of cadmium telluride diaphragm solar battery, first form one on the glass substrate
Laminated construction, described laminated construction can effectively suppress the sodium ion in glass substrate to diffuse into cadmium telluride diaphragm solar
In each film layer of battery, the most described laminated construction can effectively facilitate more incident light beam strikes to cadmium telluride absorbed layer
In, the short circuit current of cadmium telluride thin-film battery can be improved, thus obtain and there is high performance cadmium telluride diaphragm solar battery.
As shown in Figures 2 and 3, a kind of cadmium telluride diaphragm solar battery, including glass substrate 1, and along away from glass
A laminated construction that the direction of substrate 1 is successively set on glass substrate 1, transparency conducting layer 2, cushion 3, n-type semiconductor layer
4, p-type semiconductor layer 5, back contact 6 and dorsum electrode layer 7, described laminated construction includes inhibition layer 8 and a dielectric layer, institute
Stating inhibition layer 8 to be arranged on glass substrate 1, described dielectric layer is arranged between inhibition layer 8 and transparency conducting layer 2, described in press down
Preparative layer 8 is containing Si and O element, and this inhibition layer 8 is possibly together with at least one element in Al, B and contains at least one element in Li, K,
Described inhibition layer 8 and dielectric layer have light transmission.
Concrete, the gross thickness of the described laminated construction gross thickness less than 1000nm, preferably laminated construction is less than 500nm,
More preferably the gross thickness of laminated construction be less than 200nm, described inhibition layer 8 possibly together with at least one element in Mg, Ca, Sr, Ba,
Preferably possibly together with Mg and/or Ca element, described n-type semiconductor layer 4 is cadmium sulfide layer or cadmium sulfide zinc layers, described p-type semiconductor
Layer 5 is cadmium-telluride layer, cadmium telluride zinc layers or telluride zinc layers, and described back contact 6 is the cadmium-telluride layer of doping, the zinc telluridse of doping
Layer, the cadmium telluride zinc layers of doping, rich in the film layer of tellurium element or tellurium film layer, the adulterant in described back contact 6 is copper, nitrogen unit
Element, described dorsum electrode layer 7 is at least one in copper, gold, molybdenum, aluminum, silver, and described transparency conducting layer 2 is cadmium stannate, Aska-Rid.
Indium, Al-Doped ZnO, gallium-doped zinc oxide, indium-doped zinc oxide, tin-doped indium oxide, fluorine doped tin oxide, antimony doped tin oxide, mix iodine oxidation
At least one in stannum, money base transparency conducting layer.Described cushion 3 is stannum oxide, zinc oxide, magnesium zinc, aluminium oxide, oxidation
At least one in zinc-tin, Indium sesquioxide., titanium oxide, niobium oxide, tantalum oxide, silicon nitride.
Further, as in figure 2 it is shown, described dielectric layer is single layer structure, single layer structure is low refractive index material layer 9,
The refractive index of described low refractive index material layer 9 is less than 1.7, and the preferably less than refractive index of refractive index material 9 is less than 1.6.
Further, as it is shown on figure 3, described dielectric layer is multiple structure, described multiple structure is by high index of refraction material
The bed of material 10 and the alternately laminated composition of low refractive index material layer 9, the refractive index of described high refractive index material layer 10 is more than 1.75, excellent
Selecting the refractive index of high refractive index material layer 10 more than 1.85, the refractive index of described low refractive index material layer 9 is less than 1.7, preferably less than
The refractive index of refractive index material 9 is less than 1.6.Dielectric layer shown in Fig. 3 is 2 Rotating fields, certainly, in other embodiments,
It can be more than 2 layers.
Concrete, described low refractive index material layer 9 is silicon oxide, silicon oxynitride, oxidation sial, silicon oxide boron, Afluon (Asta)
Or their any combination, described high refractive index material layer 10 is zinc oxide, stannum oxide, titanium oxide, silicon nitride, niobium oxide, oxygen
Change tantalum, zirconium oxide, yittrium oxide, magnesium zinc or their any combination,
The invention also discloses the preparation method of a kind of cadmium telluride diaphragm solar battery, comprise the steps
S1, prepares glass substrate 1;
S2, is sequentially prepared a laminated construction, transparency conducting layer 2, buffering on glass substrate 1 along the direction away from glass substrate 1
Layer 3, n-type semiconductor layer 4, p-type semiconductor layer 5, back contact 6 and dorsum electrode layer 7, described laminated construction includes an inhibition layer 8
With a dielectric layer, described inhibition layer 8 is prepared on glass substrate 1, and described dielectric layer is prepared at inhibition layer 8 and electrically conducting transparent
Between layer 2, described inhibition layer 8 is containing Si and O element, and this inhibition layer 8 is possibly together with at least one element in Al, B with containing Li, K
In at least one element, described inhibition layer 8 and dielectric layer have light transmission.
Hereinafter relate to embodiment and comparative example, be all on clean glass substrate 1, sequentially form each film layer.
Embodiment 1
Form the inhibition layer 8 of one layer of 35nm on glass substrate 1 surface, described inhibition layer 8 is containing Si, O, B, Li element;Then exist
The silica coating of 50nm is formed as low refractive index material layer 9 in inhibition layer 8;Then formed on silica coating 9
The aluminium-doped zinc oxide film layer of 400nm is as transparency conducting layer 2;Then on aluminium-doped zinc oxide film layer 2, form the oxygen of 70nm
Change zinc film layer as cushion 3;Then on zinc oxide film 3, the cadmium sulphide film layer of 100nm is formed as n-type semiconductor layer 4;
Then on cadmium sulphide film layer 4, the cadmium telluride film layer of 2um is formed as p-type semiconductor layer 5;Then cadmium telluride film layer 5 is carried out
Caddy (Cleary) steam heating;Then on cadmium telluride film layer 5, the Copper-cladding Aluminum Bar cadmium telluride film layer of 100nm is formed as back contact 6;
Then on Copper-cladding Aluminum Bar cadmium telluride film layer 6,300nm metal molybdenum layer is formed as dorsum electrode layer 7.The Cadimium telluride thin film of the present embodiment
The structure of solaode is as shown in Figure 2.
Through test, the short circuit current of the cadmium telluride diaphragm solar battery of the present embodiment is 26.3mA/cm2。
Embodiment 2
Form the inhibition layer 8 of one layer of 40nm on glass substrate 1 surface, described inhibition layer 8 is containing Si, O, B, K element;Then pressing down
The silica coating of 60nm is formed as low refractive index material layer 9 on preparative layer 8;Then formed on silica coating 9
The aluminium-doped zinc oxide film layer of 400nm is as transparency conducting layer 2;Then on aluminium-doped zinc oxide film layer 2, form the oxygen of 60nm
Change zinc film layer as cushion 3;Then on zinc oxide film 3, the cadmium sulphide film layer of 110nm is formed as n-type semiconductor layer 4;
Then on cadmium sulphide film layer 4, the cadmium telluride film layer of 2um is formed as p-type semiconductor layer 5;Then cadmium telluride film layer 5 is carried out
Caddy (Cleary) steam heating;Then on cadmium telluride film layer 5, the Copper-cladding Aluminum Bar cadmium telluride film layer of 80nm is formed as back contact 6;
Then on Copper-cladding Aluminum Bar cadmium telluride film layer 6,350nm metal molybdenum layer is formed as dorsum electrode layer 7.
Through test, the short circuit current of the cadmium telluride diaphragm solar battery of the present embodiment is 26.8mA/cm2。
Embodiment 3
Form the inhibition layer 8 of one layer of 30nm on glass substrate 1 surface, described inhibition layer 8 is containing Si, O, B, K element;Then pressing down
The titanium oxide film layer of 10nm is formed as high refractive index material layer 10 on preparative layer 8;Then formed in titanium oxide film layer 10
The silica coating of 120nm is as low refractive index material layer 9;Then on silica coating 9, form the aluminum doping of 400nm
Zinc oxide film is as transparency conducting layer 2;Then on aluminium-doped zinc oxide film layer 2, the zinc oxide film of 60nm is formed as slow
Rush layer 3;Then on zinc oxide film 3, the cadmium sulphide film layer of 90nm is formed as n-type semiconductor layer 4;Then at cadmium sulphide film
The cadmium telluride film layer of 1.9um is formed as p-type semiconductor layer 5 on layer 4;Then cadmium telluride film layer 5 is carried out Caddy (Cleary) steam heat
Process;Then on cadmium telluride film layer 5, the Copper-cladding Aluminum Bar cadmium telluride film layer of 80nm is formed as back contact 6;Then at Copper-cladding Aluminum Bar
350nm metal molybdenum layer is formed as dorsum electrode layer 7 on cadmium telluride film layer 6.The cadmium telluride diaphragm solar battery of the present embodiment
Structure is as shown in Figure 3.
Through test, the short circuit current of the cadmium telluride diaphragm solar battery of the present embodiment is 27.3mA/cm2。
Embodiment 4
Form the inhibition layer 8 of one layer of 30nm on glass substrate 1 surface, described inhibition layer 8 is containing Si, O, Al, Mg, K element;Then
Inhibition layer 8 forms the titanium oxide film layer of 10nm as high refractive index material layer 10;Then in titanium oxide film layer 10
Form the silica coating of 120nm as low refractive index material layer 9;Then on silica coating 9, form the aluminum of 450nm
Doping zinc-oxide film layer is as transparency conducting layer 2;Then the tin oxide film layer forming 60nm on aluminium-doped zinc oxide film layer 2 is made
For cushion 3;Then on tin oxide film layer 3, the cadmium zinc sulfide film layer of 90nm is formed as n-type semiconductor layer 4;Then at sulfur
The cadmium telluride film layer of 2.1um is formed as p-type semiconductor layer 5 on cadmium zinc film layer 4;Then cadmium telluride film layer 5 is carried out chlorination
Cadmium steam heating;Then on cadmium telluride film layer 5, the Copper-cladding Aluminum Bar zinc telluridse film layer of 80nm is formed as back contact 6;Then
Copper-cladding Aluminum Bar zinc telluridse film layer 6 forms 350nm metal molybdenum layer as dorsum electrode layer 7.
Through test, the short circuit current of the cadmium telluride diaphragm solar battery of the present embodiment is 27.5mA/cm2。
Embodiment 5
Form the inhibition layer 8 of one layer of 30nm on glass substrate 1 surface, described inhibition layer 8 is containing Si, O, Al, Ca, K element;Then
Inhibition layer 8 forms the zinc oxide film layer of 20nm as high refractive index material layer 10;Then on zinc oxide film layer 10
Form the silica coating of 90nm as low refractive index material layer 9;Then on silica coating 9, form the stannum of 300nm
Acid cadmium film layer is as transparency conducting layer 2;Then on cadmium stannate film layer 2, the tin oxide film layer of 70nm is formed as cushion 3;Connect
And on tin oxide film layer 3, form the cadmium zinc sulfide film layer of 90nm as n-type semiconductor layer 4;Then on cadmium zinc sulfide film layer 4
Form the cadmium telluride film layer of 2.1um as p-type semiconductor layer 5;Then cadmium telluride film layer 5 is carried out Caddy (Cleary) steam heating;
Then on cadmium telluride film layer 5, the N doping zinc telluridse film layer of 80nm is formed as back contact 6;Then at N doping zinc telluridse
350nm metal molybdenum layer is formed as dorsum electrode layer 7 on film layer 6.
Through test, the short circuit current of the cadmium telluride diaphragm solar battery of the present embodiment is 26.9mA/cm2。
Embodiment 6
Form the inhibition layer 8 of one layer of 30nm on glass substrate 1 surface, described inhibition layer 8 is containing Si, O, Al, B, Mg, Li, K unit
Element;Then in inhibition layer 8, the zinc oxide film layer of 20nm is formed as high refractive index material layer 10;Then at zinc oxide film
The silicon oxide aluminum membranous layer of 90nm is formed as low refractive index material layer 9 on layer 10;Then formed on silicon oxide aluminum membranous layer 9
The cadmium stannate film layer of 300nm is as transparency conducting layer 2;Then on cadmium stannate film layer 2, form the tin oxide film layer conduct of 70nm
Cushion 3;Then on tin oxide film layer 3, the cadmium zinc sulfide film layer of 100nm is formed as n-type semiconductor layer 4;Then in sulfuration
The cadmium telluride film layer of 1.8um is formed as p-type semiconductor layer 5 on cadmium zinc film layer 4;Then cadmium telluride film layer 5 is carried out Caddy (Cleary)
Steam heating;Then on cadmium telluride film layer 5, the N doping zinc telluridse film layer of 100nm is formed as back contact 6;Then exist
200nm metal copper layer is formed as dorsum electrode layer 7 on N doping zinc telluridse film layer 6.
Through test, the short circuit current of the cadmium telluride diaphragm solar battery of the present embodiment is 26.5mA/cm2。
Comparative example 1
The aluminium-doped zinc oxide film layer of 400nm is formed as transparency conducting layer 2 on glass substrate 1 surface;Then adulterate at aluminum
The zinc oxide film of 70nm is formed as cushion 3 on zinc oxide film 2;Then on zinc oxide film 3, form 100nm
Cadmium sulphide film layer as Window layer 4;Then on cadmium sulphide film layer 4, the cadmium telluride film layer of 2um is formed as light absorbing zone 5
´;Then cadmium telluride film layer 5 is carried out Caddy (Cleary) steam heating;Then the copper forming 100nm on cadmium telluride film layer 5 is mixed
Miscellaneous cadmium telluride film layer is as back contact 6;Then on Copper-cladding Aluminum Bar cadmium telluride film layer 6,300nm metal molybdenum layer is formed as the back of the body
Electrode layer 7.The structure of the cadmium telluride diaphragm solar battery of the present embodiment is as shown in Figure 1.
Through test, the short circuit current of the cadmium telluride diaphragm solar battery of the present embodiment is 23.3mA/cm2。
From the above embodiments with the comparison of comparative example it can be seen that the present invention can improve the short of cadmium telluride thin-film battery
Road electric current, it is thus achieved that there is high performance cadmium telluride diaphragm solar battery.
The laminated construction of the present invention applies also for silicon-based film solar cells, copper-indium-galliun-selenium film solar cell
Lamina tecti glass, low radiation coated glass, DSSC and perovskite solaode etc..
Although specifically showing and describe the present invention in conjunction with preferred embodiment, but those skilled in the art should be bright
In vain, in the spirit and scope of the present invention limited without departing from appended claims, in the form and details can be right
The present invention makes a variety of changes, and is protection scope of the present invention.
Claims (11)
1. a cadmium telluride diaphragm solar battery, it is characterised in that: include glass substrate, and along the side away from glass substrate
To the laminated construction set gradually on the glass substrate, transparency conducting layer, cushion, n-type semiconductor layer, p-type semiconductor layer,
Back contact and dorsum electrode layer, described laminated construction includes an inhibition layer and a dielectric layer, and described inhibition layer is arranged on glass
On substrate, described dielectric layer is arranged between inhibition layer and transparency conducting layer, and described inhibition layer contains Si and O element, and this presses down
Preparative layer is possibly together with at least one element in Al, B with containing at least one element in Li, K, and described inhibition layer and dielectric layer have
Light transmission.
Cadmium telluride diaphragm solar battery the most according to claim 1, it is characterised in that: the gross thickness of described laminated construction
Less than 1000nm.
Cadmium telluride diaphragm solar battery the most according to claim 1, it is characterised in that: described inhibition layer possibly together with Mg,
At least one element in Ca, Sr, Ba.
Cadmium telluride diaphragm solar battery the most according to claim 1, it is characterised in that: described dielectric layer is monolayer knot
Structure, the refractive index of described dielectric layer is less than 1.7.
Cadmium telluride diaphragm solar battery the most according to claim 1, it is characterised in that: described dielectric layer is multilamellar knot
Structure, described multiple structure is made up of high refractive index material layer and the alternately laminated of low refractive index material layer, described high index of refraction
The refractive index of material layer is more than 1.75, and the refractive index of described low refractive index material layer is less than 1.7.
Cadmium telluride diaphragm solar battery the most according to claim 1, it is characterised in that: described n-type semiconductor layer is sulfur
Cadmium layer or cadmium sulfide zinc layers, described p-type semiconductor layer is cadmium-telluride layer, cadmium telluride zinc layers or telluride zinc layers, described back contacts
Cadmium-telluride layer that layer is doping, the telluride zinc layers of doping, the cadmium telluride zinc layers of doping, rich in the film layer of tellurium element or tellurium film layer,
Adulterant in described back contact is copper, nitrogen element.
Cadmium telluride diaphragm solar battery the most according to claim 1, it is characterised in that: described low refractive index material layer is
Silicon oxide, silicon oxynitride, oxidation sial, silicon oxide boron, Afluon (Asta) or their any combination, described high refractive index material layer is
Zinc oxide, stannum oxide, titanium oxide, silicon nitride, niobium oxide, tantalum oxide, zirconium oxide, yittrium oxide, magnesium zinc or theirs is arbitrary
Combination.
8. the preparation method of a cadmium telluride diaphragm solar battery, it is characterised in that: comprise the steps
S1, prepares glass substrate;
S2, is sequentially prepared a laminated construction, transparency conducting layer, cushion, n along the direction away from glass substrate on the glass substrate
Type semiconductor layer, p-type semiconductor layer, back contact and dorsum electrode layer, described laminated construction includes an inhibition layer and an electrolyte
Layer, described inhibition layer prepare on the glass substrate, described dielectric layer prepare between inhibition layer and transparency conducting layer, described in press down
Preparative layer contains Si and O element, and this inhibition layer is possibly together with at least one element in Al, B with containing at least one element in Li, K, institute
State inhibition layer and dielectric layer has light transmission.
The preparation method of cadmium telluride diaphragm solar battery the most according to claim 8, it is characterised in that: described inhibition layer
Possibly together with at least one element in Mg, Ca, Sr, Ba.
The preparation method of cadmium telluride diaphragm solar battery the most according to claim 8, it is characterised in that: described electricity is situated between
Matter layer is single layer structure, and the refractive index of described dielectric layer is less than 1.7.
The preparation method of 11. cadmium telluride diaphragm solar batteries according to claim 8, it is characterised in that: described electricity is situated between
Matter layer is multiple structure, and described multiple structure is made up of high refractive index material layer and the alternately laminated of low refractive index material layer,
The refractive index of described high refractive index material layer is more than 1.75, and the refractive index of described low refractive index material layer is less than 1.7.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610550838.7A CN106098816A (en) | 2016-07-13 | 2016-07-13 | A kind of cadmium telluride diaphragm solar battery and preparation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610550838.7A CN106098816A (en) | 2016-07-13 | 2016-07-13 | A kind of cadmium telluride diaphragm solar battery and preparation method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
CN106098816A true CN106098816A (en) | 2016-11-09 |
Family
ID=57220036
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610550838.7A Pending CN106098816A (en) | 2016-07-13 | 2016-07-13 | A kind of cadmium telluride diaphragm solar battery and preparation method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106098816A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107742649A (en) * | 2017-08-31 | 2018-02-27 | 成都中建材光电材料有限公司 | A kind of CdTe thin film solar cell module and preparation method thereof |
CN107871820A (en) * | 2017-12-11 | 2018-04-03 | 湖南师范大学 | A kind of perovskite thin film solar cell using cadmium sulfide as window material and preparation method thereof |
CN108493296A (en) * | 2018-03-20 | 2018-09-04 | 暨南大学 | A kind of flexible CdTe thin film solar cell and its preparation method and application |
CN109545869A (en) * | 2018-10-24 | 2019-03-29 | 四川大学 | A kind of flexible cadmium telluride solar cell of two-sided three terminal |
CN110061085A (en) * | 2019-04-30 | 2019-07-26 | 中国科学技术大学 | A kind of solar battery and preparation method thereof |
CN110546770A (en) * | 2017-02-27 | 2019-12-06 | 第一阳光公司 | Thin film stack for group V doping, photovoltaic device including the same, and method for forming photovoltaic device having the same |
CN114050188A (en) * | 2021-10-09 | 2022-02-15 | 中国建材国际工程集团有限公司 | Cadmium telluride solar cell based on multilayer membrane electrode and preparation method thereof |
CN115064605A (en) * | 2022-05-17 | 2022-09-16 | 中国建材国际工程集团有限公司 | Cadmium telluride thin film solar cell with transition layer and preparation method thereof |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080210303A1 (en) * | 2006-11-02 | 2008-09-04 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
CN102386262A (en) * | 2010-06-25 | 2012-03-21 | 法国圣戈班玻璃厂 | Cell including cadmium-based photovoltaic material |
CN102804390A (en) * | 2009-12-21 | 2012-11-28 | Ppg工业俄亥俄公司 | Silicon thin film solar cell having improved underlayer coating |
CN104617183A (en) * | 2014-09-05 | 2015-05-13 | 厦门神科太阳能有限公司 | CIGS (Copper Indium Gallium Selenide)-based thin film solar cell and preparation method thereof |
CN105706246A (en) * | 2013-06-07 | 2016-06-22 | 第阳光公司 | Photovoltaic devices and method of making |
-
2016
- 2016-07-13 CN CN201610550838.7A patent/CN106098816A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080210303A1 (en) * | 2006-11-02 | 2008-09-04 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
CN102804390A (en) * | 2009-12-21 | 2012-11-28 | Ppg工业俄亥俄公司 | Silicon thin film solar cell having improved underlayer coating |
CN102386262A (en) * | 2010-06-25 | 2012-03-21 | 法国圣戈班玻璃厂 | Cell including cadmium-based photovoltaic material |
CN105706246A (en) * | 2013-06-07 | 2016-06-22 | 第阳光公司 | Photovoltaic devices and method of making |
CN104617183A (en) * | 2014-09-05 | 2015-05-13 | 厦门神科太阳能有限公司 | CIGS (Copper Indium Gallium Selenide)-based thin film solar cell and preparation method thereof |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110546770A (en) * | 2017-02-27 | 2019-12-06 | 第一阳光公司 | Thin film stack for group V doping, photovoltaic device including the same, and method for forming photovoltaic device having the same |
JP2020508584A (en) * | 2017-02-27 | 2020-03-19 | ファースト・ソーラー・インコーポレーテッド | Thin film stack for group V doping, photovoltaic device including same, and method of forming photovoltaic device having thin film stack |
JP2021007171A (en) * | 2017-02-27 | 2021-01-21 | ファースト・ソーラー・インコーポレーテッド | Thin film laminate for group v doping, photovoltaic device containing the same, and forming method of photovoltaic device having thin film laminate |
US11342471B2 (en) | 2017-02-27 | 2022-05-24 | First Solar, Inc. | Thin film stacks for group V doping, photovoltaic devices including the same, and methods for forming photovoltaic devices with thin film stacks |
CN107742649A (en) * | 2017-08-31 | 2018-02-27 | 成都中建材光电材料有限公司 | A kind of CdTe thin film solar cell module and preparation method thereof |
CN107871820A (en) * | 2017-12-11 | 2018-04-03 | 湖南师范大学 | A kind of perovskite thin film solar cell using cadmium sulfide as window material and preparation method thereof |
CN108493296A (en) * | 2018-03-20 | 2018-09-04 | 暨南大学 | A kind of flexible CdTe thin film solar cell and its preparation method and application |
CN109545869A (en) * | 2018-10-24 | 2019-03-29 | 四川大学 | A kind of flexible cadmium telluride solar cell of two-sided three terminal |
CN110061085A (en) * | 2019-04-30 | 2019-07-26 | 中国科学技术大学 | A kind of solar battery and preparation method thereof |
CN114050188A (en) * | 2021-10-09 | 2022-02-15 | 中国建材国际工程集团有限公司 | Cadmium telluride solar cell based on multilayer membrane electrode and preparation method thereof |
CN115064605A (en) * | 2022-05-17 | 2022-09-16 | 中国建材国际工程集团有限公司 | Cadmium telluride thin film solar cell with transition layer and preparation method thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106098816A (en) | A kind of cadmium telluride diaphragm solar battery and preparation method thereof | |
CN109728103B (en) | Solar cell | |
RU2435250C2 (en) | Front contact with high-work function tco for use in photovoltaic device and method of making said contact | |
JP5833350B2 (en) | Solar cell and manufacturing method thereof | |
CN109037359A (en) | solar battery | |
CN104882495B (en) | Transparent conductive window layer for solar cell, and CIGS-base thin-film solar cell | |
CN106784041A (en) | A kind of silicon based hetero-junction solar cell and preparation method thereof | |
CN205335276U (en) | CIGS base thin -film solar cell | |
CN106784040A (en) | A kind of CIGS based thin film solar cells and preparation method thereof | |
JP5873881B2 (en) | Photovoltaic power generation apparatus and manufacturing method thereof. | |
CN104081544B (en) | High work function buffer layer for silicon based opto-electronics device | |
CN106663715A (en) | Solar cell | |
CN106024937A (en) | CIGS-based thin-film solar cell and preparation method thereof | |
CN106847941B (en) | A kind of cadmium telluride diaphragm solar battery and preparation method thereof | |
US10672919B2 (en) | Moisture-resistant solar cells for solar roof tiles | |
CN103367472B (en) | A kind of T-shaped top electrode back reflection thin film solar cell | |
CN209104182U (en) | Amorphous silicon/crystalline silicon heterojunction solar battery | |
CN205564791U (en) | CIGS base thin -film solar cell | |
US20110061729A1 (en) | Solar Cell and Method of Manufacturing the Same | |
CN207542252U (en) | A kind of crystal silicon solar energy battery structure | |
CN103069578B (en) | Photovoltaic device and manufacture method thereof | |
CN101488532A (en) | Back electrode module of solar cell | |
CN103367514B (en) | A kind of arcuate bottom electrode film solar cell | |
EP2876693A1 (en) | Solar cell | |
CN105023958B (en) | CIGS based thin film solar cell and preparation method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161109 |