CN105729327A - Manufacturing method for dispersion strengthening abrasive disk for machining sapphire wafers - Google Patents
Manufacturing method for dispersion strengthening abrasive disk for machining sapphire wafers Download PDFInfo
- Publication number
- CN105729327A CN105729327A CN201610076913.0A CN201610076913A CN105729327A CN 105729327 A CN105729327 A CN 105729327A CN 201610076913 A CN201610076913 A CN 201610076913A CN 105729327 A CN105729327 A CN 105729327A
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- CN
- China
- Prior art keywords
- mill
- dispersion
- strengtherning
- sapphire wafer
- abrasive disk
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
- B24D3/32—Resins or natural or synthetic macromolecular compounds for porous or cellular structure
Abstract
The invention discloses a manufacturing method for a dispersion strengthening abrasive disk for machining sapphire wafers. The manufacturing method comprises the following steps that firstly, the dispersion strengthening abrasive disk comprises, by mass percent, 65%-80% of pure-red-copper powder serving as a base material, 5%-8% of pure iron powder, 10%-15% of a binding agent and 2%-15% of dispersion strengthening particle materials, the dispersion strengthening particle materials are materials capable of making a solid-phase reaction with sapphire wafer materials, and all the components are mixed and then placed in an abrasive disk die to be pressurized and formed; and secondly, a pressurized and formed dispersion strengthening abrasive disk blank is arranged in a microwave field, microwaves are utilized for evenly seeping into the abrasive disk blank, and overall heating is achieved. The manufacturing method for the dispersion strengthening abrasive disk for machining the sapphire wafers is low in surface damage, high in efficiency and effectively suitable for the large size.
Description
Technical field
The present invention relates to Precision and Ultra-precision Machining technical field, especially a kind of mill manufacture method for sapphire wafer Ultra-precision Turning.
Background technology
Sapphire, because of its excellent performance, is widely used in precision optical machinery and optoelectronic information field, is the epitaxially grown main backing material of third generation semi-conducting material (GaN) in LED.Sapphire single-crystal (α-Al2O3) belongs to typically hard, crisp, difficult-to-machine material, extreme hardness (Mohs' hardness 9).At present, sapphire wafer process technology and equipment apply mechanically processing technique and the equipment of monocrystalline silicon piece substantially, lack the optimization to its each stage process of processing so that overall processing efficiency is low, and yield rate is low.The operations such as sapphire wafer produces the exemplary process flow process adopted in enormous quantities: section (multi-wire saw), smooth (grinding, rough lapping, smooth grinding), surface finishing (rough polishing, finishing polish).Wherein, sapphire wafer smooth grinding operation adopts red copper dish or stannum dish to make mill, the free abrasive processing technique being abrasive particle and alkaline slurries with diamond abrasive.Sapphire wafer smooth grinding operation adopts red copper dish or stannum dish as abrasive disk, and free abrasive mode is processed, it is impossible to meets sapphire wafer high efficiency simultaneously and removes and low damage processing request.By changing machinery and the physical property of mill material, reach the low surface damage of sapphire wafer attrition process and the balance of high material removing rate.
Removing and low damage processing request for realizing sapphire wafer high efficiency, a kind of compound copper base material mill proposes.Compound copper base material mill is mainly made up of red copper powder, bonding agent and filler three part, and they constitute the overall of mill.Mill is mainly hot-forming on forming method when making, mostly mill base substrate heat hardening molding is the surface utilizing the modes such as heat radiation, conduction of heat or convection current to transfer heat to mill base substrate, then heat is delivered to the inside of object, being a kind of temperature-rise period from outside to inside, there is bigger thermograde in body surface and inside.It is improper that mill base substrate heat hardening forming process temperature controls, and mill, by molding mill defects such as generation cracking, warpages, affects mill and uses.Particularly mill size is more big, mill base substrate heat hardening molding is more difficult, and mill base substrate heat hardening molding has become the bottleneck of constraint mill quality.
Therefore, a kind of mill for the low surface damage of sapphire wafer, high efficiency Ultra-precision Turning is researched and developed particularly necessary.
Summary of the invention
In order to overcome existing fixation abrasive grain mill manufacturing technology easily cracking, inefficient, large-sized deficiency cannot be applicable to, the present invention provides a kind of low surface damage, efficiency is higher, be effectively applicable to the dispersion-strengtherning mill manufacture method of large-sized processing sapphire wafer.
The technical solution adopted for the present invention to solve the technical problems is:
A kind of dispersion-strengtherning mill manufacture method processing sapphire wafer, comprises the following steps:
1) this dispersion-strengtherning mill includes following component: by mass percentage, and matrix material is pure red copper powder, and 65～80%；Straight iron powder, 5～8%；Bonding agent 10～15%, dispersion-strengtherning granular materials 2～15%；Described dispersion-strengtherning granular materials be can with the material of sapphire wafer material generation solid state reaction；The mixing of each component is placed in mill mould, extrusion forming；
2) by the dispersion-strengtherning mill base substrate after extrusion forming, it is placed in microwave field；Utilize microwave uniformly penetrating inside mill base substrate, it is achieved overall heating.
Further, described step 1) in, cold moudling.
Further, described bonding agent is thermosetting resin, described thermosetting resin includes following one or both and two or more combination: thermosetting resin, including: phenolic resin, Lauxite, melamine formaldehyde resin, epoxy resin, unsaturated-resin, polyurethane or polyimides.
Further, described dispersion-strengtherning granular materials is following one or both and two or more combination: cerium oxide, silicon oxide, ferrum oxide, magnesium oxide, chromium oxide, aluminium oxide or carborundum.
The technology of the present invention is contemplated that: to mill heat cure molding, utilizes microwave induced generation electric field to add theory of heat, it is achieved mill base substrate entirety heats, and improves the uniformity of heating.Change tradition fixation abrasive grain mill heat cure molding to add the modes such as heat utilization heat radiation, conduction of heat or convection current and transfer heat to the surface of heated mill base substrate, then heat is delivered to inside mill base substrate, mill billet surface and the bigger thermograde of internal existence, in turn result in the molding mill defects such as fixation abrasive grain mill cracking, warpage.
Dispersion-strengtherning is a kind of composite new method of materialogy research in recent years, adds that stability is high, Second Phase Particle in Dispersed precipitate in parent metal, to hinder blapharoplast dislocation motion, reaches strengthening matrix purpose.Diffusing particle addition is little with matrix material score ratio, does not affect the physicochemical properties that parent metal is intrinsic.Adopt pure red copper powder, straight iron powder, bonding agent, dispersion-strengtherning granule, with the cuprio mill of dispersion-strengtherning principle making for composite mill, its elastic modelling quantity, mill material surface hardness controllable, processing characteristics is between fine copper dish and stannum dish processing characteristics, reach the low surface damage of sapphire wafer attrition process and the balance of high material removing rate, and then process time needed for the follow-up polishing process of effective minimizing, improve overall processing efficiency, reduce production cost.
Meanwhile, the described dispersion-strengtherning granule (such as cerium oxide, silicon oxide etc.) used in the mill of dispersion-strengtherning principle can produce solid state reaction with sapphire workpiece in the course of processing, it is achieved workpiece material is efficiently removed.This is because workpiece (sapphire wafer) surface exists planar defect, the atomic binding energy of surface of the work is in certain distribution.When dispersion-strengtherning granule streaks at Sapphire wafer surface, because of effect mechanically and thermally, the atom phase counterdiffusion of dispersion-strengtherning granule and Sapphire wafer surface, part dispersion-strengtherning granule atom clamp-ons sapphire wafer material surface, makes the combination of sapphire wafer material surface to decline；Due to the reduction of sapphire wafer top layer atomic binding energy, when next dispersion-strengtherning granule streaks Sapphire wafer surface, material is removed easily.Therefore, rely on the chemical machinery effect produced between dispersion-strengtherning granule and sapphire wafer material to realize the removal of material, the efficient Ultra-precision Turning of sapphire wafer can be promoted.
Beneficial effects of the present invention is mainly manifested in: 1. when mill heat cure, microwave magnetic induction is adopted to produce electric field mode of heating, microwave can uniformly penetrating to the inside of mill base substrate, improve the uniformity of heating, solve heat in conventional thermal curing mode and be delivered to the surface of heated mill base substrate, then heat is delivered to inside mill base substrate, and mill billet surface and inside exist bigger thermograde, it is prevented that the mill forming defects such as cracking, warpage produce.Compared with solidifying mode of heating with conventional thermal, the processing cost of microwave magnetic induction mode of heating heat cure molding fixation abrasive grain mill reduces, and easy to make；2. the cuprio mill adopting dispersion-strengtherning principle is composite mill, solve employing fine copper dish of former sapphire wafer lappingout stage and stannum dish, the mill of homogenous material, its machinery and physical property are non-adjustable, realize the performance controllable such as cuprio mill elastic modelling quantity, mill material surface hardness, make the cuprio mill processing characteristics of dispersion-strengtherning principle between fine copper dish and stannum dish processing characteristics, reach the low surface damage of sapphire wafer attrition process and the balance of high material removing rate；3. the described dispersion-strengtherning granule (such as cerium oxide, silicon oxide etc.) used in the mill of dispersion-strengtherning principle can produce solid state reaction with sapphire workpiece in the course of processing, realize workpiece material effectively to remove, promote the efficient Ultra-precision Turning of sapphire wafer.
Accompanying drawing explanation
Fig. 1 microwave magnetic induction produces electric field heating and makes mill schematic diagram
Fig. 2 is dispersion-strengtherning principle schematic in matrix
Fig. 3 is the mill attrition process schematic diagram of dispersion-strengtherning principle
Detailed description of the invention
Below in conjunction with accompanying drawing, the invention will be further described.
With reference to Fig. 1～Fig. 3, a kind of dispersion-strengtherning mill manufacture method processing sapphire wafer, comprise the following steps:
1) this dispersion-strengtherning mill includes following component: by mass percentage, and matrix material is pure red copper powder, and 65～80%；Straight iron powder, 5～8%；Bonding agent 10～15%, dispersion-strengtherning granular materials 2～15%；Described dispersion-strengtherning granular materials be can with the material of sapphire wafer material generation solid state reaction；The mixing of each component is placed in mill mould, extrusion forming；
2) by the dispersion-strengtherning mill base substrate after extrusion forming, it is placed in microwave electromagnetic field field；Utilize microwave uniformly penetrating inside mill base substrate, it is achieved overall heating.
Further, described step 1) in, cold moudling.
Further, described bonding agent is thermosetting resin, described thermosetting resin includes following one or both and two or more combination: thermosetting resin, including: phenolic resin, Lauxite, melamine formaldehyde resin, epoxy resin, unsaturated-resin, polyurethane or polyimides.
Further, described dispersion-strengtherning granular materials is following one or both and two or more combination: cerium oxide, silicon oxide, ferrum oxide, magnesium oxide, chromium oxide, aluminium oxide or carborundum.
In the present embodiment, described mill base substrate is placed in microwave magnetic field, the magnetic induction that described microwave magnetic field produces can induce electric field and produce electric current by metal powder surface in described mill, described electric current can produce heat in described metal dust, and then mill entirety is heated, microwave uniformly penetrating, to the inside of mill base substrate, improves the uniformity of heating.
In the present embodiment, example 1: the described cuprio mill based on dispersion-strengtherning principle includes following component: by mass percentage, matrix material is pure red copper powder, 70%；Straight iron powder, 5%, bonding agent 15%, dispersion-strengtherning granular materials 10%, control mill mold surface temperature 150 ° ± 5 °；Example 2: matrix material is pure red copper powder, 75%；Straight iron powder, 6%；Bonding agent 12%, dispersion-strengtherning granular materials 7%, control mill mold surface temperature 120 ° ± 5 °；Example 3: matrix material is pure red copper powder: 65%；Straight iron powder, 8%；Bonding agent 12%, dispersion-strengtherning granular materials 15%, control mill mold surface temperature 180 ° ± 5 °；Example 4: matrix material is pure red copper powder, 80%；Straight iron powder, 5%；Bonding agent 10%, dispersion-strengtherning granular materials 5%, control mill mold surface temperature 210 ° ± 5 °；Example 5: matrix material is pure red copper powder, 78%；Straight iron powder, 5%；Bonding agent 15%, dispersion-strengtherning granular materials 2%, control mill mold surface temperature 100 ° ± 5 °
When making described dispersion-strengtherning mill, first mix full and uniform with described bonding agent for described dispersion-strengtherning granular materials；Then by described pure red copper powder and described straight iron powder by amount join step by step dispersion-strengtherning granular materials described in mix homogeneously with in described bonding agent batch mixing, process adopts mode of vibration stirring mixing, it is achieved pure red copper powder, straight iron powder, dispersion-strengtherning granule, bonding agent mix homogeneously；The dispersion-strengtherning mill mixed is made material evenly laid out in mill mold cavity, compressing, then described mill mould is placed in microwave oven, heat cure.
Fig. 1 is that microwave magnetic induction heating makes mill schematic diagram.Being placed on turntable 6 upper bracket 5 by the dispersion-strengtherning mill base substrate 1 of extrusion forming together with mill mould 2, mill mould 2 adopts ceramic material, has insulation asbestos outside mill mould.During solidification, the microwave generator 4 in microwave induced heater chamber 8 sends microwave to mill base substrate 1.Driving device 7 (such as motor) is rotated by turntable 6, support 5 band movable grinding disc base substrate 1 and mill mould 2, makes microwave uniformly penetrating mill base substrate 1.Solidify the incipient stage, because the absorbing property of mill mould 2 ceramic material, contribute to the rapid raising speed of mill base substrate.The final stage of microwave curing, relies on the insulation effect heating fixation abrasive grain mill base substrate of mill mould 2 external thermal insulation asbestos.Infrared radiation thermometer 3 is arranged in microwave induced heater chamber 8, monitors mill mould 2 surface temperature, and then controls microwave generator 4 transmitting power.
Fig. 2 is the dispersion-strengtherning principle schematic of mill.Grinding disc substrate 21 by producing deformation in shearing force process, strengthens granule (such as SiO in attrition process process2Granule) 22 Dispersed precipitate form Hard Inclusion in mill, and hinder the dislocation motion of matrix material 21, reach to change the effect of the performance parameters such as the overall elastic modelling quantity of mill, case hardness.
Fig. 3 is the mill attrition process schematic diagram of dispersion-strengtherning principle.Dispersion-strengtherning mill, with red copper powder 31 and straight iron powder 32 for matrix, strengthens granule 33 (such as SiO2Micropowder, hardness 7, lower than sapphire but higher than fine copper) as reinforcement, red copper powder 31, straight iron powder 32, enhancing granule 33 are played holding effect by bonding agent 34.Strengthen granule 33 Dispersed precipitate in red copper powder 31 and straight iron powder 32, form Hard Inclusion, realize adding the mill based on dispersion-strengtherning principle in the man-hour, its surface local plastic is better than red copper dish, diamond abrasive grain 35 big in mill liquid 37 can be made to be prone to be absorbed in disc surface, it is to avoid workpiece 36 (sapphire wafer) surface is produced big scratch damage by it；Meanwhile, based on the mill of dispersion-strengtherning principle, its integral rigidity is better than stannum dish, under certain loads, can keep higher workpiece material clearance.In the course of processing, strengthen granule 33 and workpiece 36, under mechanically and thermally effect, produce solid state reaction between the two, promote the efficient Ultra-precision Turning of sapphire wafer.
Claims (4)
1. the dispersion-strengtherning mill manufacture method processing sapphire wafer, it is characterised in that: described manufacture method comprises the following steps:
1) this dispersion-strengtherning mill includes following component: by mass percentage, and matrix material is pure red copper powder, and 65～80%；Straight iron powder, 5～8%；Bonding agent 10～15%, dispersion-strengtherning granular materials 2～15%；Described dispersion-strengtherning granular materials be can with the material of sapphire wafer material generation solid state reaction；The mixing of each component is placed in mill mould, extrusion forming；
2) by the dispersion-strengtherning mill base substrate after extrusion forming, it is placed in microwave field；Utilize microwave uniformly penetrating inside mill base substrate, it is achieved overall heating.
2. a kind of dispersion-strengtherning mill manufacture method processing sapphire wafer as claimed in claim 1, it is characterised in that: described step 1) in, cold moudling.
3. a kind of dispersion-strengtherning mill manufacture method processing sapphire wafer as claimed in claim 1 or 2, it is characterized in that: described bonding agent is thermosetting resin, described thermosetting resin includes following one or both and two or more combination: thermosetting resin, including: phenolic resin, Lauxite, melamine formaldehyde resin, epoxy resin, unsaturated-resin, polyurethane or polyimides.
4. a kind of dispersion-strengtherning mill manufacture method processing sapphire wafer as claimed in claim 1 or 2, it is characterised in that: described dispersion-strengtherning granular materials is following one or both and two or more combination: cerium oxide, silicon oxide, ferrum oxide, magnesium oxide, chromium oxide, aluminium oxide or carborundum.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610076913.0A CN105729327A (en) | 2016-02-03 | 2016-02-03 | Manufacturing method for dispersion strengthening abrasive disk for machining sapphire wafers |
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| CN201610076913.0A CN105729327A (en) | 2016-02-03 | 2016-02-03 | Manufacturing method for dispersion strengthening abrasive disk for machining sapphire wafers |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113043181A (en) * | 2021-02-02 | 2021-06-29 | 泉州众志新材料科技有限公司 | Forming method of resin diamond abrasive disc |
| CN114367927A (en) * | 2022-01-26 | 2022-04-19 | 华侨大学 | Soft/hard abrasive consolidation pill grinding disc and preparation method thereof |
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| CN104661795A (en) * | 2012-07-19 | 2015-05-27 | 普拉迪普金属有限公司 | Rapid curing of resin bonded grinding wheels |
| CN104924195A (en) * | 2015-06-12 | 2015-09-23 | 浙江工业大学 | Sapphire wafer efficient ultra-precision machining method |
| CN104924200A (en) * | 2015-06-12 | 2015-09-23 | 衢州学院 | Dispersion strengthening grinding disk for ultra-precision machining of sapphire wafer |
-
2016
- 2016-02-03 CN CN201610076913.0A patent/CN105729327A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US6099394A (en) * | 1998-02-10 | 2000-08-08 | Rodel Holdings, Inc. | Polishing system having a multi-phase polishing substrate and methods relating thereto |
| CN101148034A (en) * | 2007-11-06 | 2008-03-26 | 浙江工业大学 | Multi-level grain size abrasive grain mixed semi-fixation abrasive grain grinding tool |
| CN104661795A (en) * | 2012-07-19 | 2015-05-27 | 普拉迪普金属有限公司 | Rapid curing of resin bonded grinding wheels |
| CN104924195A (en) * | 2015-06-12 | 2015-09-23 | 浙江工业大学 | Sapphire wafer efficient ultra-precision machining method |
| CN104924200A (en) * | 2015-06-12 | 2015-09-23 | 衢州学院 | Dispersion strengthening grinding disk for ultra-precision machining of sapphire wafer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113043181A (en) * | 2021-02-02 | 2021-06-29 | 泉州众志新材料科技有限公司 | Forming method of resin diamond abrasive disc |
| CN114367927A (en) * | 2022-01-26 | 2022-04-19 | 华侨大学 | Soft/hard abrasive consolidation pill grinding disc and preparation method thereof |
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Application publication date: 20160706 |