CN104716223A - Preparation method for integrated film making and annealing of flexible substrate in roll-to-roll mode - Google Patents
Preparation method for integrated film making and annealing of flexible substrate in roll-to-roll mode Download PDFInfo
- Publication number
- CN104716223A CN104716223A CN201310675592.2A CN201310675592A CN104716223A CN 104716223 A CN104716223 A CN 104716223A CN 201310675592 A CN201310675592 A CN 201310675592A CN 104716223 A CN104716223 A CN 104716223A
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- Prior art keywords
- flexible substrate
- volume
- annealing
- roll
- chamber
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- 239000000758 substrate Substances 0.000 title claims abstract description 76
- 238000000137 annealing Methods 0.000 title claims abstract description 69
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000011248 coating agent Substances 0.000 claims abstract description 13
- 238000000576 coating method Methods 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 7
- 238000004544 sputter deposition Methods 0.000 claims description 27
- 238000010438 heat treatment Methods 0.000 claims description 16
- 230000010354 integration Effects 0.000 claims description 12
- 230000000873 masking effect Effects 0.000 claims description 11
- 238000004804 winding Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 239000010408 film Substances 0.000 abstract description 9
- 238000012423 maintenance Methods 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract description 2
- 238000005096 rolling process Methods 0.000 description 13
- 238000005477 sputtering target Methods 0.000 description 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 7
- 229910052725 zinc Inorganic materials 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- -1 copper indium tin sulphur Chemical group 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a preparation method for integrated film making and annealing of a flexible substrate in a roll-to-roll mode. The method comprises the step of carrying out continuous coating from the lower face of the flexible substrate on a roll at one end of a roll-to-roll device until the flexible substrate is rolled to a roll at the other end of the roll-to-roll device. The method is characterized in that after continuous coating is carried out on the flexible substrate, annealing treatment is continuously carried out on the flexible substrate before the flexible substrate is rolled to the other end of the roll-to-roll device. According to the method, after continuous coating is carried out on the flexible substrate on the roll-to-roll device, annealing treatment is continuously carried out on the flexible substrate before the flexible substrate is rolled to the other end of the roll-to-roll device, the coating and annealing processes can be completed on the flexible substrate through the same device, single piece annealing is carried out on the flexible substrate when annealing is carried out, compared with the mode that annealing is carried out on a whole roll of flexible substrate, the material performance of manufacturing of thin-film batteries is improved, production efficiency is improved greatly, the manufacturing process is simple, and production and maintenance cost is low.
Description
Technical field
The invention belongs to thin film solar cell manufacturing process technical field, particularly relate to the preparation method of a kind of flexible substrate volume to volume masking annealing integration.
Background technology
At present, flexible substrate solar cell is because its technique is advanced, with low cost and be easy to bending and of many uses, can be used for automobile top, solar energy opens paulin, solar powered aircraft and house roof and exterior wall.Extensive volume to volume flexible substrate adopt magnetron sputtering technique to be widely used in the production fields such as window layer of solar battery.And take post growth annealing significantly can improve the properties of film to rete under different atmosphere.
Known for preparing on flexible parent metal surface the technology that one deck or multilayer have the film of certain function by methods such as magnetron sputterings in volume to volume magnetron sputtering many employings vacuum chamber of flexible substrate at present, such as, the absorbed layer of CIGS battery, resilient coating, all available the method such as Window layer is prepared.Although can uninterrupted continuous production function film, but its weak point is that sputtering equipment does not possess post growth annealing or post growth annealing simplicity of design, the post growth annealing under different atmosphere cannot be carried out by continuous print after sputtering technology completes, film performance uniformity is affected, and production efficiency cannot improve.
Summary of the invention
The present invention for solve in known technology the technical problem that exists and provide that a kind of production efficiency is high, the material property that makes hull cell and uniformity is good, it is simple to make, the preparation method of cost is low flexible substrate volume to volume masking annealing integration.
The present invention includes following technical scheme:
The preparation method of flexible substrate volume to volume masking annealing integration, comprise from volume to volume device one end volume flexible substrate below continuous coating until flexible substrate reel-to-reel is on the volume of the winding apparatus other end, be characterized in: after described flexible substrate continuous coating, flexible substrate reel-to-reel carries out annealing in process continuously to before the winding apparatus other end; Described process of carrying out annealing in process continuously comprises: in volume to volume device, isolate an annealing chamber by baffle plate, in annealing chamber, the upper and lower faces of flexible substrate respectively installs a heating backboard, temperature-measuring heat couple installed by each heating backboard, and the temperature on control heating backboard is between 150 ~ 400 DEG C; The snorkel passing into anneal gas is installed above annealing chamber.
The present invention can also adopt following technical measures:
Described heating backboard is the corrosion resistant plate being tied with resistance wire.
Snorkel with gas flowmeter and vacuum gauge are installed in the top of described annealing chamber.
Described flexible substrate material is metal forming or polyimides.
The described gas passed in the first sputtering chamber, the second sputtering chamber and annealing chamber is O
2, Ar, N
2or H
2.
The advantage that the present invention has and good effect:
1, the present invention passes through after the flexible substrate continuous coating on volume to volume device, flexible substrate reel-to-reel carries out annealing in process continuously to before the winding apparatus other end, make flexible substrate can complete the process of plated film, annealing in the same apparatus, and flexible substrate is monolithic annealing when annealing, relative to the annealing of entire volume flexible substrate, not only increase the material property that hull cell makes, and substantially increase production efficiency, and manufacturing process is simple, and production maintenance cost is low.
2, annealing system is isolated into separately an independently annealing chamber by the present invention, passes into N by gas separators separately to annealing chamber
2as anneal gas, make the flexible substrate atmosphere of the flexible substrate atmosphere of plated film and annealing independent separately, further increase the material property that hull cell makes.
Accompanying drawing explanation
Fig. 1 is that the present invention prepares flexible substrate volume to volume use in magnetron sputtering coating annealing device schematic diagram.
In figure, 1-chamber, 2-send volume room, 3-jockey pulley, 4-let off roll, 5-guide roller, 6-gas separators, 7-snorkel, 8-gas flowmeter, 9-vacuum gauge, 10-baffle plate, 11-first sputtering chamber, 12-first sputtering target, 13-second sputtering chamber, 14-flexible substrate, 15-second sputtering target, 16-annealing chamber, 17-heats backboard, 18-rolling room, 19-wind-up roll.
Embodiment
For summary of the invention of the present invention, Characteristic can be disclosed further, be also described in detail as follows by reference to the accompanying drawings especially exemplified by following instance:
The preparation method of flexible substrate volume to volume masking annealing integration, comprise from volume to volume device one end volume flexible substrate below continuous coating until flexible substrate reel-to-reel is on the volume of the winding apparatus other end, be characterized in: after described flexible substrate continuous coating, flexible substrate reel-to-reel carries out annealing in process continuously to before the winding apparatus other end; Described process of carrying out annealing in process continuously comprises: in volume to volume device, isolate an annealing chamber by baffle plate, in annealing chamber, the upper and lower faces of flexible substrate respectively installs a heating backboard, temperature-measuring heat couple installed by each heating backboard, and the temperature on control heating backboard is between 150 ~ 400 DEG C; The snorkel passing into anneal gas is installed above annealing chamber.
Described heating backboard is the corrosion resistant plate being tied with resistance wire.
Snorkel with gas flowmeter and vacuum gauge are installed in the top of described annealing chamber.
Described flexible substrate material is metal forming or polyimides.
The described gas passed in the first sputtering chamber, the second sputtering chamber and annealing chamber is O
2, Ar, N
2or H
2.
Embodiment 1: with reference to accompanying drawing 1.
As shown in Figure 1, corrosion resistant plate is carried out seamless welding and go out to prepare the chamber 1 of flexible substrate volume to volume masking annealing needed for integration, can be welded with chamber inner wall by the stainless steel baffle plate 10 of flexible substrate 14 with four pieces, chamber interior is isolated into from left to right successively and send volume room 2, first sputtering chamber 11, second sputtering chamber 13, annealing chamber 16 and rolling room 18; Each block baffle plate is all fixedly mounted with a gas separators 6 by flexible liner bottom; The equal passband in top of the first sputtering chamber, the second sputtering chamber and annealing chamber has snorkel 7 and the vacuum gauge 9 of gas flowmeter 8; Send that volume is indoor to be parallel to each other and let off roll 4 from bottom to top along front and back two ledge own centre line, jockey pulley 3 and guide roller 5, wherein jockey pulley shifts out a segment distance left in the horizontal direction, to ensure tension force when flexible substrate volume to volume moves; Rolling is indoor to be parallel to each other and wind-up roll 19 from bottom to top along front and back two ledge own centre line, jockey pulley and guide roller, and wherein jockey pulley shifts out a segment distance to the right in the horizontal direction, to ensure tension force when flexible substrate volume to volume moves; Send the guide roller in volume room and rolling room to be parallel to each other and in same level, send the jockey pulley in volume room and rolling room to be parallel to each other and in same level, send the let off roll in volume room and wind-up roll in rolling room to be parallel to each other and in same level; Be placed with the native oxide zinc target as the first sputtering target 12 in first sputtering chamber, in the second sputtering chamber, be placed with ZnO: the Al target as the second sputtering target 15; Sending on the let off roll in volume room has outermost end to be rolled onto the titanium foil volume being coated with Copper Indium Gallium Selenide floor absorbed layer of wind-up roll in rolling room successively by the gas separators on each baffle plate, and wherein titanium foil volume is as flexible substrate; Absorbed layer between volume room to rolling room is sent to be positioned at below flexible substrate; Be fixedly mounted with one group in annealing chamber's equal level above and below flexible substrate and be tied with 304 thick stainless steel substrates of resistance wire 10mm as heating backboard 17, each heating backboard is fixedly mounted with the temperature-measuring heat couple that controls annealing chamber's temperature.
Before work, show vacuum degree with vacuum gauge, the first sputtering chamber and the second sputtering chamber and annealing chamber are vacuumized, is controlled by gas flowmeter, by snorkel to the first sputtering chamber and the second sputtering chamber input Ar gas and O
2the mist of gas, gas pressure intensity is 0.2 ~ 0.5Pa; During work, flexible substrate with the winding speed of 40 ~ 60mm/min from let off roll successively by send volume room jockey pulley, guide roller, send volume room, the gas separators between the first sputtering chamber and the second sputtering chamber, the gas separators between the second sputtering chamber and annealing chamber, the gas separators between annealing chamber and rolling room, guide roller, the jockey pulley in rolling room, be finally rolled onto on wind-up roll; In the process of winding, be splashed on the Copper Indium Gallium Selenide layer absorbed layer below flexible substrate in the first sputtering chamber as the native oxide zinc target of the first sputtering target with the power DC of 700 ~ 1000W, Copper Indium Gallium Selenide layer absorbed layer surface forms one deck native oxide zinc layers; When sputtering has the flexible substrate of native oxide zinc layers to be wound up into the second sputtering chamber, be splashed in the native oxide zinc layers of flexible substrate as ZnO: Al target of the second sputtering target with the power DC of 900 ~ 1000W in second sputtering chamber, native oxide zinc layers surface forms layer of ZnO: Al layer; Before the flexible substrate being coated with ZnO: Al layer is wound up into annealing chamber, pass into N by snorkel to annealing chamber
2as anneal gas, controlled by temperature-measuring heat couple, keep the temperature of flexible substrate upper and lower faces heating backboard to remain on 150 ~ 400 DEG C, when flexible substrate is by annealing chamber, namely annealing in process has been carried out to the flexible substrate being coated with ZnO: Al layer; Rolling room is transferred into by the flexible substrate after annealing, the guide roller that the indoor placement center line of rolling is parallel to each other, jockey pulley and wind-up roll, flexible substrate complete plated film, annealing after through guide roller and jockey pulley, be wound around rolling by wind-up roll, complete the manufacturing process of volume to volume flexible substrate plated film annealing integration.
Embodiment 2:
Polyimides is adopted to be flexible substrate in this example; Second sputtering target is ZnO:In
2o
3(IZO) target; The temperature of heating backboard remains on 400 DEG C, and all the other are identical with embodiment 1.
Embodiment 3:
Adopt metal forming to be flexible substrate in this example, the absorbed layer below flexible substrate is copper indium tin sulphur absorbed layer; Second sputtering target is ZnO:Ga
2o
3target; Be splashed in the native oxide zinc layers of flexible substrate with the power DC of 1000 ~ 1500W, all the other are identical with embodiment 1.
Although be described the preferred embodiments of the present invention by reference to the accompanying drawings above; but the present invention is not limited to above-mentioned embodiment; above-mentioned embodiment is only schematic; be not restrictive; those of ordinary skill in the art is under enlightenment of the present invention; not departing under the ambit that present inventive concept and claim protect, a lot of form can also be made.These all belong within protection scope of the present invention.
Claims (5)
1. the preparation method of flexible substrate volume to volume masking annealing integration, comprise from volume to volume device one end volume flexible substrate below continuous coating until flexible substrate reel-to-reel is on the volume of the winding apparatus other end, it is characterized in that: after described flexible substrate continuous coating, flexible substrate reel-to-reel carries out annealing in process continuously to before the winding apparatus other end; Described process of carrying out annealing in process continuously comprises: in volume to volume device, isolate an annealing chamber by baffle plate, in annealing chamber, the upper and lower faces of flexible substrate respectively installs a heating backboard, temperature-measuring heat couple installed by each heating backboard, and the temperature on control heating backboard is between 150 ~ 400 DEG C; The snorkel passing into anneal gas is installed above annealing chamber.
2. the preparation method of flexible substrate volume to volume masking annealing integration according to claim 1, is characterized in that: described heating backboard is the corrosion resistant plate being tied with resistance wire.
3. the preparation method of flexible substrate volume to volume masking annealing integration according to claim 1, is characterized in that: the top of described annealing chamber is provided with gas flowmeter and vacuum gauge.
4. the preparation method of flexible substrate volume to volume masking annealing integration according to claim 1, is characterized in that: described flexible substrate material is metal forming or polyimides.
5. the preparation method of flexible substrate volume to volume masking according to claim 1 annealing integration, is characterized in that: described in the gas passed in the first sputtering chamber, the second sputtering chamber and annealing chamber be O
2, Ar, N
2or H
2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201310675592.2A CN104716223A (en) | 2013-12-11 | 2013-12-11 | Preparation method for integrated film making and annealing of flexible substrate in roll-to-roll mode |
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Application Number | Priority Date | Filing Date | Title |
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CN201310675592.2A CN104716223A (en) | 2013-12-11 | 2013-12-11 | Preparation method for integrated film making and annealing of flexible substrate in roll-to-roll mode |
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CN104716223A true CN104716223A (en) | 2015-06-17 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111020527A (en) * | 2020-01-10 | 2020-04-17 | 晶澳(扬州)太阳能科技有限公司 | Film coating equipment |
CN111719132A (en) * | 2020-06-29 | 2020-09-29 | 东部超导科技(苏州)有限公司 | Multi-channel winding device integrating film coating and heat treatment of superconducting strip |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040063320A1 (en) * | 2002-09-30 | 2004-04-01 | Hollars Dennis R. | Manufacturing apparatus and method for large-scale production of thin-film solar cells |
CN2773098Y (en) * | 2005-03-22 | 2006-04-19 | 无锡康力电子有限公司 | Vacuum cavity for magnetic-controlled sputtering film coating |
CN101771105A (en) * | 2009-12-01 | 2010-07-07 | 郭玉钦 | Method for preparing CIGS thin film solar cell in continuous production line |
CN201887059U (en) * | 2010-11-03 | 2011-06-29 | 苏州新区科兴威尔电子有限公司 | Continuous automatic flexible film solar cell production equipment |
-
2013
- 2013-12-11 CN CN201310675592.2A patent/CN104716223A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040063320A1 (en) * | 2002-09-30 | 2004-04-01 | Hollars Dennis R. | Manufacturing apparatus and method for large-scale production of thin-film solar cells |
CN2773098Y (en) * | 2005-03-22 | 2006-04-19 | 无锡康力电子有限公司 | Vacuum cavity for magnetic-controlled sputtering film coating |
CN101771105A (en) * | 2009-12-01 | 2010-07-07 | 郭玉钦 | Method for preparing CIGS thin film solar cell in continuous production line |
CN201887059U (en) * | 2010-11-03 | 2011-06-29 | 苏州新区科兴威尔电子有限公司 | Continuous automatic flexible film solar cell production equipment |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111020527A (en) * | 2020-01-10 | 2020-04-17 | 晶澳(扬州)太阳能科技有限公司 | Film coating equipment |
CN111719132A (en) * | 2020-06-29 | 2020-09-29 | 东部超导科技(苏州)有限公司 | Multi-channel winding device integrating film coating and heat treatment of superconducting strip |
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Application publication date: 20150617 |