CN104428771A - System and methods of calculating diffuse reflection of an optical stack with a nanowire - Google Patents

Abstract

The present disclosure relates to a method for improving optical qualities of transparent conductive films including a multilayer optical stack and conductive nanowires embedded therein.

Description

For calculating the irreflexive system and method for the optical stack with nano wire

The cross reference of related application

The application is based on 35U.S.C. § 119 (e), require the U.S. Provisional Application number 61/621 submitted on April 6th, 2012,359 and the U.S. Provisional Application number 61/678 submitted on August 2nd, 2012,886, and in the U.S. Patent Application No. 13/667 of submission on November 2nd, 2012,556 and the rights and interests of U.S. Patent Application No. 13/831,351 submitted on March 14th, 2013, above application in full way of reference is incorporated to herein.

Background technology

Nesa coating comprises and is coated in high light transmitting surface or suprabasil conductive material, and be widely used in the flat-panel monitor of such as liquid crystal display (LCD), touch pad or touch sensor, electroluminescence device (such as, light emitting diode), film photovoltaic cell, or be used as antistatic layer and electromagnetic wave shielding.

Current, vacuum-deposited metal oxide such as indium tin oxide (ITO) is the industry standard material for providing optical transparence and electric conductivity to dielectric surface (such as glass and polymer film).But metal oxide film is frangible and be easy to damage under bending or other physical property stress.Metal oxide film also requires the depositing temperature of rising and/or high annealing temperature, to realize high conductivity level.For being easy to some substrate absorbing moisture, as (as polycarbonate) at the bottom of plastics and organic group, the suitable adhesion of metal oxide film becomes problem.Therefore, metal oxide film application on a flexible substrate is seriously limited.In addition, vacuum moulding machine is process that cost is very high and needs specialized equipment.

In recent years, existence composite metal nano material (such as nano silver wire) substitutes the trend of industrial standard electrically conducting transparent ito film current in flat-panel monitor.Usually, nesa coating by first in substrate coating comprise nano silver wire and cementing agent composition for ink and formed.Then, transparent UV or heat curing copolymer material can be applied, to form protective layer.Paint-on technique based on nano wire is particularly useful for printed electronic device.By using the form based on solution, printed electronics makes in large area flexible substrate, manufacture firm electron device becomes possibility.

In nesa coating, the existence of nano wire may cause some optics challenge, and these optics challenges can't run into usually in continuous print ito film.Such as, when ITO touch sensor is closed, this ITO touch sensor shows black under ambient light; And the touch sensor be made up of the hyaline membrane based on nano silver wire may have the appearance of " emulsus " or " muddiness ".Emulsus outward appearance may affect picture quality (when LCD module is opened), shows as comparatively low contrast or other image problems.Therefore, there is the demand of optics challenge specific to the transparent conductor solved based on nano wire.

Summary of the invention

There is provided herein and relate to by reduce or diffuse reflection in minimum optical heap solves the numerous embodiments of the method for nano wire display emulsus problem of appearance, wherein this optical stack comprises at least one conducting film based on nano wire.

An embodiment is a kind of method, and it comprises: for the optical stack with nano wire is selected optical stack parameter and calculates multiple diffuse reflectance according to optical stack parameter, wherein, each diffuse reflectance is used for the respective configuration of multiple optical stack configuration.The method also comprise at least based on diffuse reflectance relatively select optical stack configure in one of, and according to selected optical stack configuration formed optical stack.

In one embodiment, method comprises the multiple specular reflectance values of calculating, and wherein each specular reflectance values is all for each configuration of optical stack configuration.

In one embodiment, calculate diffuse reflectance and comprise the scattering cross-section calculating nano wire.

In one embodiment, calculate diffuse reflectance and comprise each optical stack is configured, respectively the electromagnetic field of nano wire position incident light in calculating optical heap, and from the transfer matrix of the light of nano wire scattering in calculating optical heap.

In one embodiment, the amount that the diffuse reflection field comprised based on scattering cross-section and nano wire position incident light calculates the light from nano wire scattering is calculated.

In one embodiment, the field calculating incident light comprises the electromagnetic field of the diffusion light calculating nano wire position.

In one embodiment, multiple optical stack parameter comprises the number of plies of optical stack.In one embodiment, multiple optical stack parameter comprises the thickness range of the layer of optical stack.In one embodiment, multiple optical stack parameter comprises the ranges of indices of refraction of the layer of optical stack.

In one embodiment, the layer forming optical stack is included in substrate and forms ground floor, and forms the second layer on the first layer, and nano wire is placed in ground floor or the second layer.

In one embodiment, method comprises and calculates multiple specular reflectance values according to optical stack parameter, and wherein each specular reflectance values is used for the respective configuration in the configuration of multiple optical stack.

In one embodiment, calculate multiple specular reflectance values comprise for incide each optical stack configuration optical oomputing transfer matrix.

In one embodiment, one of to select in optical stack configuration to be based in part on the comparison of specular reflectance values.

In one embodiment, one of to select in optical stack configuration to comprise and select to configure corresponding to the optical stack of minimum diffuse reflectance.

In one embodiment, method comprises the input optical stack parameters input of the optical stack by having nano wire to processor, and input optical stack parameter is stored in the memory circuitry coupled with processor.Method also comprises and calculates multiple diffuse reflectance for multiple optical stack within a processor, and wherein each optical stack has each self-configuring according to optical stack parameter.Calculating diffuse reflectance comprises, for each configuration, the respectively calculating electromagnetic field value corresponding to the incident light of position in the optical stack of optical stack nano wire position, and be based in part on electromagnetic field value calculating transfer matrix to provide the diffuse reflectance of optical stack surface.

In one embodiment, method comprises by diffuse reflectance mutually relatively and one of to select in diffuse reflectance.

In one embodiment, method comprises the optical stack configuration output will corresponded to selected by selected diffuse reflectance from processor.

In one embodiment, the ranges of indices of refraction that optical stack parameter comprises at least one deck of optical stack is inputted.In one embodiment, selected optical stack configures the refractive index comprised in ranges of indices of refraction.In one embodiment, the thickness range that optical stack parameter comprises the layer of optical stack is inputted.

In one embodiment, selected optical stack configures the thickness comprised in the thickness range of the layer of optical stack.

In one embodiment, method comprises according to selected optical stack configuration formation optical stack.

In one embodiment, calculate diffuse reflectance and comprise the scattering cross-section calculating nano wire.

An embodiment is a kind of system, comprising: processor; The storer coupled with processor; The input component coupled with processor, is configured to the first parameter receiving optical stack.Processor is configured to the surface diffuse reflectance value set calculating the set corresponding to nano wire position incident light electromagnetic field value in optical stack, the light scattering distribution calculating nano wire, calculating optical heap, and estimates the second parameter sets of optical stack.Second parameter corresponds to the preferred value of diffuse reflectance set.Output is couple to processor, and is configured to receive the second parameter from processor.

In one embodiment, system comprises the display coupled with output, and display is configured to display second parameter.

In one embodiment, system comprises the depositing device being couple to output, and depositing device is configured to reception second parameter, and according to the first optical layers that the second parameter deposit optical is piled.

An embodiment is a kind of method, comprises by the parameters input of optical stack to processor, within a processor, estimates the electromagnetic field value set of the incident light corresponding to optical stack nano wire position, and estimates the light scattering distribution of nano wire within a processor.Method also comprises, and within a processor, estimates the diffuse reflectance set of optical stack surface based on electromagnetic field value and scattering cross-section, and the optical stack configuration corresponding to selected diffuse reflectance is exported from processor.

In one embodiment, estimate that electromagnetic field set comprises and calculate the first transfer matrix according to optical stack parameter.

In one embodiment, estimate that diffuse reflectance set comprises and calculate the second transfer matrix according to optical stack parameter.

Accompanying drawing explanation

In the accompanying drawings, identical Ref. No. indicates identical element or behavior.In accompanying drawing, the size of element and relative position must proportionally not illustrate.Such as, shape and the angle of different elements are not shown to scale, and some elements optionally amplify and locate, to improve the readability of accompanying drawing.In addition, the concrete shape of shown element is not intended to transmit any information about concrete element true form, and is only the selection carried out for the ease of being convenient in the accompanying drawings identify.

Fig. 1 is the sectional view including the optical stack of nano wire according to present embodiment.

Fig. 2 A shows the mirror-reflection according to an embodiment optical stack.

Fig. 2 B shows the diffuse reflection according to an embodiment optical stack.

Fig. 3 A is the diffuse reflectance curve in optical stack.

Fig. 3 B is the mirror-reflection curve in optical stack.

Fig. 4 A-4C shows in different medium and the diffuse reflectance curve of several wavelength under different-thickness.

Fig. 5 A-5C shows in different medium and the mirror-reflection of several wavelength under different-thickness.

Fig. 6 is the cross section of the optical stack according to an embodiment.

Fig. 7 shows the total internal reflection in optical stack.

Fig. 8 is the sectional view including the optical stack of three layers according to an embodiment.

Fig. 9 A is the cross section illustrating the optical stack of top pattern and bottom mode propagation in optical stack according to an embodiment.

Fig. 9 B illustrates the top pattern of diffusion light propagation and the optical stack cross section of bottom pattern in optical stack according to an embodiment.

Figure 10 A shows the GUI according to an embodiment.

Figure 10 B shows the GUI according to another embodiment.

Figure 10 C shows the mirror-reflection and diffuse reflectance curve optimized according to an embodiment.

Figure 10 D shows the GUI according to an embodiment.

Figure 10 E shows the GUI according to another embodiment.

Figure 11 is the system chart according to an embodiment.

Figure 12 is for reducing irreflexive method in optical stack according to an embodiment.

Figure 13 is for reducing irreflexive method in optical stack according to another embodiment.

Figure 14 shows the board device including optical stack according to an embodiment.

Embodiment

Description herein comprises the potential cause of " emulsus " outward appearance of nano wire display, the method for solution " emulsus " outward appearance and has lower or do not have the optical stack of emulsus outward appearance.As used herein, " optical stack " refers to the multiple field heap of film, and the light wherein from external light source or internal light source is piled through this multiple field, and the optical characteristics of one or more layer on light has impact.Film in optical stack is generally functional membrane, such as nesa coating, polarizer, color filter, antiglare film, or antireflection film and protective finish and clear binder.Film can be (such as, the substrate of glass) of flexible (such as, polymeric substrates) or rigidity.Optical stack is coupled to another functional element usually as display.Outside membrane removal, intermembranous space or the space between film and display also affect the optical characteristics of light, and think a part for optical stack.

In addition, in the context of membrane orienting, be positioned at another film " on " film be configured to external light source (or observer) more contiguous than this another film.Such as, the upper coating be positioned on nano wire layer is always arranged between external light source (or observer) and nano wire layer.Be positioned at another film " under " film be configured to than this another film further from external light source (or observer).Such as, have employed the optical stack of the lower coating be arranged under nanometer layer, nano wire layer is always arranged between external light source (or observer) and lower coating.

Fig. 1 shows the optical stack 30 of transparent conductive film.In basic optical heap (30), as in more complicated optical stack (such as, in whole touch pad), multiple or all layers or structural detail may result in diffuse reflection to a certain extent.Numerous embodiments described herein is by operating and revise each layer or structural detail weakens irreflexive method.However, it should be understood that any one or more embodiments capable of being combined, reduce irreflexive additional benefit further to provide.Therefore, numerous embodiments relates to optical stack, and it comprises at least one nano wire layer; And at least one substrate adjacent with nano wire layer, wherein nano wire layer comprises multiple conducting nanowires, and when observing from the side identical with incident light of optical stack, the diffuse reflection of incident light is certain number percent of incident light.As used herein, " adjacent " refers to the relative position of substrate and nano wire layer.Substrate can directly contact with nano wire layer, or close to each other, and plugs one or more middle layer between.

Optical stack 30 comprises the conducting nanowires 32 be embedded in transparent insulating layer 34.Transparent insulating layer 34 and nano wire 32 are positioned in substrate 36.

Optical stack 30 is the types that can be used in flat-panel monitor.Therefore, the attribute with the visual signature greatly strengthening optical stack is expect for optical stack 30.As mentioned above, the optical stack 30 including nano wire 32 may suffer " emulsus " or fuzzy quality.This emulsus quality can detract the visual signature of optical stack 30.Particularly, when needing to show the dark colour of such as black, optical stack 30 may rather show milky, and this brings negative effect to the quality of shown image.

A source of these negative characteristics is the diffuse reflections from nano wire 32.Typically, when light runs into surface or object, reflection angle equals incident angle, and this is called as mirror-reflection.Show mirror-reflection in fig. 2.In fig. 2, light is with incident angle Φ _iincide on the surface 37 of optical stack 30.Light is with angle Φ _rreflect from the surface 37 of optical stack 30, wherein, Φ _requal Φ _i.

But, as shown in Figure 2 B, be irradiated to the surface 37 of optical stack 30 or some light in fact on any surface, also with multiple angle θ _rbe diffusely reflected.This diffuse reflection itself is embodied in light in the multiple directions different from the expection angle with mirror-reflection and is scattered.Although only marked an angle θ in Fig. 2 B _rbut, diffuse with multiple angle θ _rreflected.In fig. 2b, the light incided on surface 37 is scattered in many directions.Although quite the light of fraction is diffusely reflected from any surface usually, but the optical stack 30 in Fig. 2 B is subject to more diffuse reflection due to the existence of nano wire 32.

When light incide size be less than in the object of optical wavelength or structure time, light is from diffuse scattering object.Usually, the radius of nano wire 32 and optical stack 30 is less than 100nm, and such as radius is between 5nm to 100nm.100nm is much smaller than the minimum wavelength of visible ray.Therefore, when any visible ray runs into nano wire 32, it is from nano wire 32 diffuse reflection.In hyaline membrane, the most Transmission light incided on surface 37 are crossed surface 37 and are entered into the layer 34 being wherein embedded with nano wire 32.Only there is fraction light at surface reflection.But certain part of the light mutual with nano wire 32 is diffusely reflected.This diffuse reflection is the main cause of emulsus quality, and emulsus quality can reduce the outward appearance of the optical stack 30 including nano wire 32 sometimes.Verified, when nano wire 32 is embedded into optical stack 30, utilize the diffuse reflection calculating and can reduce nano wire 32 in several ways.

One of this method is the refractive index of the layer 34 reducing wherein to be embedded with nano wire 32.Fig. 3 A shows the curve that the optical wavelength on nano wire 32 is incided in diffuse reflection relatively.Show three curves, each corresponding refractive index is respectively the layer of 1.43,1.33 and 1.23.Refractive index is that the peak value of the curve of 1.43 equals 1.33 and the n curve that equals 1.23 far above n.Refractive index is equaled to the layer of 1.43, irreflexive peak value appears at optical wavelength when being about 400nm.400nm is the border of visible spectrum and corresponds to purple light.People can not see the wavelength being less than 380nm usually, and it corresponds to ultraviolet.

When refractive index is reduced to n=1.33, not only irreflexive peak value reduces, and it has also moved on to less wavelength.For the material of refractive index n=1.33, peak value has been reduced to about 6 × 10 ^-4and peak wavelength is about 370nm.Therefore, not only less light is diffusely reflected back and has gone out the surface 37 of optical stack 30, and has been shifted out visible spectrum by the greater part of the light reflected and entered into ultraviolet spectrum.Here it should be noted that, in this curve map, diffuse reflectance is arbitrary unit, but to change the parameter of optical stack 30 to irreflexive relative effect be helpful for understanding.

Refractive index is the diffuse reflection of the material of n=1.23 is minimum in three curves.For n=1.23, peak value diffuse reflection is about 4.5 × 10 ^-4.And it is equally important that peak wavelength further shift-in be sightless ultraviolet ray range for human eye.Therefore, nano wire 32 is placed in the less layer of refractive index 34, diffuse reflection can either be reduced and also peak value diffuse reflection can be moved away from visible spectrum.

Reducing mirror-reflection as much as possible is also expect.Fig. 3 B shows three curves of the relative optical wavelength of mirror-reflection of three the refractive index ns identical with Fig. 3 A.As can be seen from Fig. 3 B, be the layer 34 of n=1.43 for refractive index, mirror-reflection is the highest.For n=1.43, peak value mirror-reflection is about 0.04.But, be outside visible range at the peak value at about 300nm place.For the layer 34 that refractive index is n=1.33, peak value mirror-reflection has a small amount of decline.But for most of visible spectrum, corresponding wavelength is about 400nm to 700nm, the mirror-reflection of n=1.33 is far below the mirror-reflection of n=1.43.Therefore, although the disclosure mainly pay close attention to be reduce diffuse reflection, also do not ignore mirror-reflection.Not only reduce mirror-reflection but also reduce the visual signature that diffuse reflection can greatly strengthen optical stack 30.

For the layer 34 that refractive index is n=1.23, mirror-reflection is minimum.Not only peak value mirror-reflection reduce, and mirror-reflection in most of visible spectrum almost close to 0, wherein low spot appears at about 500nm place.Therefore, the refractive index reducing wherein to be embedded with the layer of nano wire 32 is all highly profitable for diffuse reflection and mirror-reflection.

Another parameter that can affect mirror-reflection and irreflexive optical stack 30 is the thickness of the layer 34 being wherein embedded with nano wire 32.Fig. 4 A shows the refractive index for some wavelength and n=1.23, and diffuse reflection is relatively wherein embedded with the curve of the thickness of the layer 34 of nano wire 32.Can find out, the diffuse reflection of wavelength to be a little higher than wavelength of diffuse reflection of the light of 400nm the be light of 450nm, 500nm or 650nm.May the most significantly, in the whole thickness range that the thickness of layer 34 is about 20nm to 400nm, for any setted wavelength, diffuse reflection major part keeps constant.Compared to the diffuse reflection of other wavelength in Fig. 4 A, the diffuse reflection of 400nm light both on value larger, and change is also larger.In other optical stack, situation is really not so.In fact, the thickness of layer may be very important in some configuration.

It is the diffuse reflection figure of the nano wire 32 in the layer 34 of n=1.33 that Fig. 4 B depicts in refractive index.The increase a little of refractive index result in the increase of diffuse reflection value.Particularly, the diffuse reflection of wavelength to be the diffuse reflectance wavelength of the light of 400nm the be light of 450nm, 500nm or 650nm increases more.Therefore, Fig. 3 A and Fig. 3 B and Fig. 4 A-4C shows in the purple end place diffuse reflection fluctuation close to visible spectrum the most violent.

In figure 4 c, refractive index is n=1.43.Along with the increase of this refractive index, occur that the irreflexive of 400nm light significantly increases.Also occurred that wavelength is the irreflexive less increase of the light of 450nm, 500nm and 650nm, but degree is much smaller.

But, along with the change of thickness of layer 34 being wherein embedded with nano wire 32, mirror-reflection fluctuation.For each of the light of the four kinds of wavelength drawn in Fig. 5 A, mirror-reflection follows sinusoidal wave figure.Along with the increase of layer 34 thickness, the light of all wavelengths experiences crest and trough on their mirror-reflection value.When layer thickness close to 0 time, for each of four kinds of wavelength light, mirror-reflection all close to about 4% peak value.

The minimum value of mirror-reflection is all experienced along with thickness is increased to all four kinds of wavelength that about 100nm, Fig. 5 A draws.Along with the thickness of layer 34 increases to 200nm, the light of all four kinds of wavelength is again close to peak value.According to the thickness in heap middle level, the position that light is running through optical stack will experience constructive interference and destructive interference.In addition, the phase differential of 180 degree may be had from surface 37 light reflected and the light reflected from below.Therefore, depend on thickness and the material of layer 34 and layer 38, the light reflected from below may with the light generation destructive interference of reflecting from surface 37 and because this reducing mirror-reflection.

In figure 5b, depict when the refractive index of layer 34 is 1.33, the mirror-reflection of the light of four kinds of wavelength.Crest and trough appear at the roughly the same position occurred when refractive index is 1.23.But, when present minimum value is higher than n=1.23.Particularly, minimum value only drops to the mirror-reflection of about 1%, and as n=1.23, minimum value drops to about 0.

In Fig. 5 C, the refractive index being wherein embedded with the layer 34 of nano wire 32 is n=1.43.As in Fig. 5 B and Fig. 5 A, peak value is maintained at about 4% herein.But, the minimum value of mirror-reflection number percent relative to n=1.33 1% and n=1.23 0% increased about 2.5%.Therefore, in order to reduce mirror-reflection, in some optical stack, have lower refractive index is expect.

Fig. 6 shows the optical stack 30 according to an embodiment.According to an embodiment, optical stack 30 is included in the nano wire 32 in insulation course 34.Layer 34 is placed on layer 38, and layer 38 is high refractive index layers.Layer 38 is also optically transparent.Layer 38 can strengthen the forward scattering of the diffused light from nano wire 32.When nano wire 32 is placed in the layer 34 had relative to layer 38 compared with low-refraction, facilitate the more multiple forward scatter of diffused light.In other words, when light is from nano wire 32 diffuse reflection, more light will towards layer 38 forward scattering.Therefore, the surface 37 towards optical stack 30 is diffusely reflected back by less light.This part is because when existing near high index layer compared with low-index layer, relative to back scattering, have the density of states of increase for forward scattering.As previously described, the density of states of increase facilitates forward scattering.

As illustrated in fig. 7, another advantage under nano wire 32 with high refractive index layer 38 is that the total internal reflection diffused can appear in high refractive index layer 38.Incident angle is greater than critical angle θ _ctime, there is total internal reflection.Relative to the normal measure incident angle at refraction interface.When light propagates into low-index layer 34 from high refractive index layer 38, arrive layer 38 and be folded to high refractive index layer 38 with the light of layer 34 interface.When incident angle is enough large, the angle of transmission in low-index layer 34 reaches 90 degree relative to normal.In this, light no longer transmission enter into low-index layer 34.This mutual obedience Snell's law, is expressed as:

n ₁sin(θ) ₁＝n ₂sin(θ) ₂

By simple operation, the critical angle θ that total internal reflection will occur can be calculated _c, as follows:

θ _c＝arcsin(n ₂/n ₁)

Therefore, the difference between low-index layer 34 and high refractive index layer 38 is larger, and critical angle will be less.Along with critical angle diminishes, when arriving the interface of high refractive index layer 38 and low-index layer 34, more light will carry out total internal reflection.Therefore, the layer 38 with enough highs index of refraction is selected can be further reduced to the amount diffused on the surface 37 reaching optical stack 30.Therefore, as described with reference to Figure 6, promote that total internal reflection is relevant to the forward scattering of enhancing.Particularly, the light entering into high refractive index layer 38 from nano wire 32 forward scattering is more, by just more for the light carrying out total internal reflection in high refractive index layer 38, and can not arrive the surperficial increase also therefore causing emulsus.

According to the principle discussed with reference to Fig. 6 and Fig. 7, Fig. 8 discloses the optical stack 30 according to an embodiment, and wherein, as described above, high refractive index layer 38 to be placed under low-index layer 34 and on substrate 36.There is the optical stack 30 including low-index layer 34, be embedded in nano wire 32 in low-index layer 34 and high refractive index layer adjacent under low-index layer provide with reference to the enhancing described by Fig. 6 and Fig. 7.There is the substrate 36 of refractive index usually between low-index layer 34 and the refractive index of high refractive index layer 38, provide extra support structure and it can be made to be attached in tablet device.

Although the aforementioned embodiments of optical stack 30 provides advantage, in order to minimize diffuse reflection and mirror-reflection, the optimization of optical stack may be still very difficult.In order to provide, there is minimum irreflexive optical stack, for given layer and nano wire configuration, utilize effective method to calculate or estimating that the diffuse reflection of optical stack 30 is helpful.The diffuse reflection of optical stack 30 can be calculated by the Mace Weir system of equations solving optical stack 30.The differential form of Mace Weir equation describes the attribute of electric field E and magnetic field B, as follows:

$\▿\·E=\frac{\mathrm{\ρ}}{{\mathrm{\ϵ}}_0},$

$\▿\·B=0,$

$\▿\×E=-\frac{\∂B}{\∂t},$

$\▿\×B={\mathrm{\μ}}_{0}J+{\mathrm{\μ}}_0{\mathrm{\ϵ}}_0\frac{\∂E}{\∂t},$

Wherein, ρ is the electric density because freedom and polarization charge cause, and J is current density, ε ₀the specific inductive capacity of free space, and μ ₀it is the magnetic permeability of free space.When calculating the diffuse reflection of many optical stack 30, in the irreflexive method of calculating, utilize Mace Weir system of equations to be relative difficulty, and a large amount of time and process resource may be needed.The complicacy of Mace Weir system of equations make to solve and the preferred parameter of calculating optical heap 30 very difficult.

In addition, at every turn new and different layers joins optical stack 30 time, be not easy operation Mace Weir system of equations and contain the rapid Optimum of the optical stack 30 of additional parameter with providing package again.In some cases, may under nano wire 32 and on all increase many layers.Some optical stack may be limited by concrete constraint.When the parameter of each optical stack 30 or constraint condition change, Mace Weir system of equations will solve again, therefore will use more time and process resource.

For calculating optical heap mirror-reflection and irreflexive less take resource method described by transfer matrix with reference to Fig. 9 A and Fig. 9 B.Because Mace Weir system of equations is partial differential equation of second order, the complete or collected works of these solution of equations utilize the set of at least two Line independent solution races (pattern).It is top pattern and bottom pattern that an embodiment defines this Liang Ge race.First kind solution, top pattern, corresponds to the field distribution that can be produced by the light inciding system from top, as the situation of mirror-reflection.Equations of The Second Kind solution, bottom pattern, describes the field distribution running through system that can be produced by the light source of the base side (under Fig. 9 a middle level 36) being positioned at structure.These solutions are also present in irreflexive process.

Mirror-reflection process is considered in more detail referring now to the arrow on the right side of Fig. 9 A.In the process, the incident light of some is transmitted.Fig. 9 A shows the optical stack 30 according to an embodiment.In figure 9 a nano wire 32 is not shown, because the correlation computations hypothesis nano wire 32 of optical stack does not exist to perform in Fig. 9 A.In optical stack, the position of y=0 corresponds to the position that nano wire 32 can occupy in optical stack.As previously described, optical stack 30 comprises low-index layer 34.Low-index layer 34 is positioned on high refractive index layer 38 and high refractive index layer 38 is positioned in substrate 36.Light source irradiation optical stack 30.Light incides on the surface 37 of low-index layer 34.

Under supposing not have the condition of nano wire, calculate the distribution running through the EM field of sandwich construction.Utilize the method for transfer matrix to calculate to perform these, wherein, the field of every layer is expressed as a series of plane waves (reflection/transmission ripple) moved up and down through system, and these wave amplitudes are associated by transfer matrix at adjacent layer.

The light coming from light source incides on the surface 37 of optical stack 30.Arrow on the right side of optical stack corresponds to top pattern, because they carry the energy coming from system head.The incident light coming from the some of the light source on optical stack enters into low-index layer 34 transmitted through surface 37, as spread into layer 34 on the right side of optical stack in Fig. 9 A downwards arrow indicated by.The a certain proportion of light inciding optical stack 30 from surface 37 reflection, indicated by the arrow that departs from a certain angle from the arrow spreading into layer 34 downwards.The angle of this arrow is not intended to represent the angle of light from surface reflection, and only represents that some light upwards returns and some light passes.Arrows all in Fig. 9 A is not always the case.Seem that these arrows angled are only angled they and the arrow through interface to be distinguished.In fact, light source is depended in the direction that light is propagated, and is described by Mace Weir solution of equations.

Some light passing interface 37 from air continues to propagate in layer 34, until it arrives the interface 44 between layer 34 and layer 38.At interface 44, some light through and some light are reflected, as the arrow being passed down through interface 44 on right side and return and enter into layer 34, represent shown in the arrow of the reflection of interface 44.This reflected light, then interface 37 will be turned back to, partial contribution in initial mirror-reflection (to upward arrow) and partial contribution in initial transmission (downward arrow).In the context of Fig. 9 a, these reflections more afterwards and again transmission combine and are represented by the single combination of transmission (downwards) and reflection (upwards) arrow.This description is consistent with the Transfer Matrix Method according to an embodiment, and it can be used to automatically calculate total reflection/transmission coefficient.

Again, at interface 42, across-layer 38 enters into layer 36 to certain part light of interface 42 through interface 42.Similarly, a part of light inciding interface 42 is reflected back toward and enters into layer 38.The light of some passes interface 40 and enters any layer put in place under layer 36.

Below the layer 36 of optical stack 30, show the light source of hypothesis.Dotted arrow on the left of optical stack comes from this light source and corresponds to " bottom pattern ", because they upwards carry the energy coming from system bottom.Light through interface 40 quantity spreads into the layer 36 of optical stack, and towards interface 42, and the light of certain part will be reflected.At interface 42, the light of partial amt passes interface 42 from layer 36 to layer 38.Meanwhile, at interface 42, part light is reflected back towards interface 40.Again, at interface 44, some light passes through to layer 34, and some light is reflected back at interface 44 and enters into layer 38.

Finally, on the surface 37 of optical stack 30, some light enters into optical stack 30 ambient air from across-layer 34.

Utilize transfer matrix, the amplitude of the field of propagating up and down in can calculating every layer.Particularly, for top pattern, the calculating of the light amplitude upwards reflected from interface 37 can be used to very accurately calculate total mirror-reflection.In addition, the amplitude comprising other ripples of top pattern can be used to the electromagnetic field calculating any given upright position in heap 30.In this way, the field of nano wire 32 position can be calculated.

In one embodiment, the size of optical stack in the z-axis direction, namely to the direction in the page, is assumed that it is unlimited.Therefore, total field of optical stack 30 can be expressed as the linear combination with not like-polarized two fields.First kind field, is called TE ripple, and the electric field component had along z-axis makes the magnetic field of this ripple only have x and y component.Similarly, Equations of The Second Kind ripple, TM ripple, has the magnetic field of aliging with z-axis, and the electric field of this ripple is in xy plane.

In optical stack 30, on the interface of two any selected adjacent layers (j and j+1), suppose that incident light is, component there is wave vector.Relation between adjacent layer inner plane wave amplitude can by considering that the boundary condition of Electric and magnetic fields is determined.Clearly, for the interface of (such as, respective layer 34 and layer 38) between layer j and j+1, this relation is expressed as:

$\left(\begin{array}{c}{a}_{j+1}^{-}\\ a_{j+1}^{+}\end{array}\right)=\frac{1}{2}\left(\begin{array}{cc}1+K_j& 1-K_j\\ 1-K_j& 1+K_J\end{array}\right)\left(\begin{array}{c}{a}_j^{-}\\ a_j^{+}\end{array}\right)$

Wherein, a ^-and a ⁺be respectively negative with positive y direction on the wave amplitude propagated, polarization dependent constant K _jfor TE polarized wave by represent, and for TM polarized wave by represent.The matrix that the amplitude of the field in adjacent layer is connected to each other is called as transfer matrix.This transfer matrix is a type of transfer matrix, and it can be used to mirror-reflection, diffuse reflection or the light wave amplitude of calculating optical heap 30.Also the transfer matrix of many other types can be used.In addition, according to principle of the present disclosure, also can adopt and not use the additive method of transfer matrix to calculate diffuse reflection.

Fig. 9 B shows the optical stack 30 of Fig. 9 A, wherein, and the light scattering that nano wire 32 will incide in the optical stack 30 of Fig. 9 A.The light source occurred in Fig. 9 A does not present in figures 9 b and 9 to emphasize that current focus is at diffuse reflection instead of mirror-reflection.Therefore, nano wire 32 has the light be scattered in a plurality of directions.

Diffuse reflection correspond to leave through surface 37 optical stack 30 by the light quantity of nano wire 32 scattering.Therefore, according to an embodiment, comprise for calculating irreflexive method the light quantity calculated from nano wire 32 scattering on all directions.As previously mentioned, when calculating transfer matrix to determine mirror-reflection, also can the field of any position in calculating optical heap.Calculating by a step of the light of nano wire 32 scattering is the field calculating nano wire 32 position.

Once as calculated or estimate the field of nano wire position, just can by calculating or estimating that the scattering cross-section of nano wire 32 obtains by the light quantity of nano wire scattering.The scattering cross-section of nano wire can obtain to the Mace Weir system of equations of the long cylinder line of shaped by solving.For the line with round section, can scattering cross-section be calculated, and in process resource, not drop into great burden.For the line of other shapes, such as there is the line in polygon or other cross sections, also can calculate scattering cross-section.In an example of this calculating, Mace Weir solution of equations is expressed as one group of cylindrical wave, and is used for associating the amplitude of these ripples along the boundary condition of line circumference.At article (Viktor A.Podolskiy, Evgenii Narimanov, Wei Fang, and HuiCao, " Chaotic microlasers based on dynamical localization (the chaotic laser light device based on Kinematic Positioning) ", Proc.Nat.Acad.Sci.v.101 (29) pp.10498-10500 (2004) and its list of references) in, use and come from the enforcement that the photoemissive example of dielectric resonator describes this formula.The mode that this article is quoted in full is incorporated to herein.Once find this association, be associated by the flux of energy of line scattering with the flux of energy inciding line, and the scattering cross-section utilizing this association to calculate line is simple.Scattering cross-section describes the light that incides nano wire 32 by by the ratio of the light of nano wire 32 scattering.

Being multiplied with the scattering cross-section of nano wire by the field of the light by inciding nano wire 32, can calculating by the light quantity of nano wire 32 scattering.By again calculating by the transfer matrix of the light of nano wire 32 scattering in optical stack 30, can calculate or estimate total diffuse reflection of optical stack 30.Diffuse reflection is the light quantity leaving nano wire 32 scattering of optical stack 30 from surface 37.In one embodiment, nano wire is counted as its scattered light comparably in all directions.Mathematically, the spectrum A (k diffused _x) do not rely on the x component k of wave vector _x.

Similar with specular light in Fig. 9 A, in figures 9 b and 9, from each interface also transmission and the reflection of the irreflexive light of nano wire in optical stack.As mentioned above, for top pattern and bottom pattern, calculated for calculating irreflexive transfer matrix.

As mentioned above, from the light of nano wire 32 forward scattering by the interface 44 that incides between layer 34 and layer 38.Part light will be reflected back towards surface 37.Layer 38 will be entered transmitted through interface 44 from a part of light of nano wire 32 forward scattering.The interface 44 that light will propagate between layer 38 and layer 36 again, at this interface, some light by transmission and some light will upwards be reflected back towards interface 44.Some light transmitted through interface 36 will reflect at interface 40 and some light will through interface 40.All light through interface 40 will represent diffuse transmission light.Diffuse reflection will be contributed to by the light that each interface 44,4240 reflects.But, irreflexive main contributions is come to the light (illustrating on nano wire in figures 9 b and 9) irradiating and enter the bottom pattern of system.Transmitted through amount (its by represent entered top pattern subsequently by part light that interface 44,42 and 40 reflect by all light and originally irradiating that line scattering enters into bottom pattern) the total diffuse reflection of expression system of the light of interface 37.

By with reference to the similar method of the mirror-reflection described by figure 9A, can diffuse reflection be calculated.That is, obtain scattering cross-section, and for the inherent all interface transmissions of optical stack 30 and reflection diffuse perform transfer matrix calculate.By this method, total diffuse reflection closely, but can employ relatively few process resource.

In one embodiment, the field of nano wire position can both comprise the field coming from incident light also comprise come from before the field of scattered light.In other words, will in optical stack 30 internal reflection and will again by nano wire 32 scattering by some light of nano wire 32 scattering.By considering to come from the field that nano wire position diffuses, the precision that diffuse reflection calculates can be improved.

The calculating of light scattering is generalized to the phase place considering scattered light.For reaching this point, suppose that the radius of nano wire is very little, make the scattering of nano wire by the cylinder harmonic wave of minimum possibility leading (experience calculates and shows that TE scattering is dominated by the cylindrical patterns of m=0 [haveing nothing to do with polar angle], and TM scattering is dominated by the cylindrical patterns of m=1 [like dipole]).Therefore, scattering wave spectrum is proportional to:

$A_{\mathrm{TE}}\left(k_x\right)\∝\frac{1}{k_y}$

$A_{\mathrm{TM}}\left(k_x\right)\∝\frac{c}{\mathrm{n\ω}}$

Wherein, n is the refractive index of line adjacent material, and k is wave vector, and ω is angular frequency.Attention: when enough hour of the radius of nano wire, be either way reduced to above-mentioned k _xindependent spectrum.

The summation (bottom pattern is y>0, and top pattern is y<0) of the ripple that scattered light is expressed as " irradiation " adds the summation of top pattern and bottom mode reflection component respectively.By the top pattern of light source irradiation and the amplitude of bottom pattern identical for TE polarization, and contrary for dipole TM polarization.When considering the interference of top pattern and bottom pattern, the effective breadth irradiating light becomes:

For TE ripple be:

$a_b^{+}=a\left(k_x\right)\frac{1+r_t}{1-r_t{r}_b};$ $a_t^{-}=a\left(k_x\right)\frac{1+r_b}{1-r_b{r}_t}$

For TM ripple be:

$a_b^{+}=a\left(k_x\right)\frac{1-r_t}{1-r_t{r}_b};$ $a_t^{-}=-a\left(k_x\right)\frac{1-r_b}{1-r_b{r}_t}$

Wherein, a (k _x) for irradiating the amplitude of light, and r _t, r _bfor the reflection coefficient of top pattern and bottom mode component.

In order to calculate the field of feedback, namely diffusion light incides on nano wire 32 again, and the field of transmitting is multiplied with their respective reflection coefficient and both is added by we.Therefore, total amplitude of the field at line position place becomes:

For TE ripple, for:

For TM ripple, for

Factor dk _xrepresent the step-length of composing for the wave vector of mathematical computations.The incident light being certainly in harmony of the field of nano wire position calculating and comprise and come from external light source and diffusing.Certainly be in harmony in scheme, field can be described as:

Cause the matrix relationship describing illumination spectrum:

$a\left(k_x\right)={[I-{\mathrm{dk}}_x\tilde{R}A]}^{-1}{\mathrm{Aa}}_0\left(k_x^{\&prime;}\right).$

Wherein, A (k _x, k _x') describe from having wave vector k _x' plane wave enter into there is wave vector k _xthe scattering of plane wave, and (diagonal line) matrix have corresponding to aforementioned a _totthe composition of coefficient.

As mentioned above, when the number percent of the irreflexive light turning back to nano wire position is little, can be simplified these and calculate.In the case, the flux of energy of the spectral components diffused enhances:

${\left|\frac{1+r_t}{1-r_b{r}_t}\right|}^2$

In some applications, to calculate or estimating part diffusion light instead of whole diffuse reflections may be favourable.Such as, estimate towards the amount diffused of observer or only estimate away from the light of observer's scattering amount instead of estimate that the total amount of diffusion light on all directions may be important.In these cases, the formula researched and developed above can be used to the flux of energy calculated because diffuse reflection produces, and wherein diffuse reflection is incident angle Φ _iand reflection angle θ _rfunction.Above-mentioned for calculating/estimating total irreflexive transfer matrix formula, can be used to calculate or estimate this irreflexive angle distribution.In these cases, incident angle and reflection angle both can pass through wave vector k _xlongitudinal component carry out parametrization, and then based on amplitude a (k _x) angular spectrum calculate represent irreflexive flux of energy angle distribution.

In order to improve irreflexive estimated accuracy of angular dependence (-dance), can by the scattering probability A (k of different mode _x, k _x') be incorporated in calculating.Particularly, k can be used _xuncorrelated spectrum, dipole type directionality spectrum, their combination or other directionality spectrum.In one embodiment, scattering probability A depends on polarization, for TE polarized wave, produces the incoherent flux of energy in direction, and for TM polarized wave, (flux of energy had is inversely proportional to cos to produce dipole type of radiation figure ²(φ _i+ θ _r)).In other implementations, the flux of energy of TE polarized wave and 1/cos ²θ _rbe directly proportional, and the flux of energy of TM polarized wave and cos ²(φ _i+ θ _r)/cos ²θ _rbe inversely proportional to.

May there is the scattering probability A of many different models, these models also all drop in the scope of the present disclosure.When developing these models, remember that the estimation of transfer matrix model representation diffuse scattering process is helpful.Therefore, utilize Finite Element, Finite-Difference Time-Domain Method, rigorous coupled wave approximation method or additive method the prediction of transfer matrix code to be compared with the strict solution (but more consuming time) of Mace Weir system of equations, can finely tune coefficient.

Use short-cut method as above to calculate or estimate the diffuse reflection of optical stack, optimizer can be utilized calculate the diffuse reflection of many optical stack 30 with different parameters, produce minimum irreflexive optical stack 30 to find out.Business can optimizer, program available in such as Matlab, can be used to according to principle of the present disclosure optimize many optical stack configuration diffuse reflection.In conjunction with the irreflexive method of above-mentioned calculating, these optimizers can assist to find out has relatively low irreflexive optical stack.

The concrete optimization aim of this process depends on final application.Such as, for setted wavelength, can total diffuse reflection of optimization system.Also can by the weighted mean corresponding with the diffuse reflection on one or more specific direction, or under diffuse reflection keeps below the restriction of certain value in particular directions, the diffuse reflection that combined weighted is total.Also can estimate the diffuse reflection of the light of different wave length, and be polymerized these by some method (as average, weighted mean etc.) and estimate to reach the final goal figure of merit that will optimize.According to the disclosure, those skilled in the art can implement all these combinations.

Although describe diffuse reflection and mirror-reflection calculating according to transfer matrix above, according to principle of the present disclosure, the additive method except transfer matrix also can be used to obtain diffuse reflectance.These additive methods also all drop in the scope of the present disclosure.

What an example of these methods comprised proposition is used for the mirror-reflection of optimizing optical heap and the extension of irreflexive method; wherein optical stack inside is incorporated to one group and fixes thick-layer, and thick-layer can comprise thick bottom (such as optical cement) or thick protective seam (such as cover plate layer).Here " optics is thick " means that the thickness of layer is greater than or is equivalent to the coherent length of the radiation presented in heap.

The process formed with above-mentioned generation top pattern and bottom pattern is propagated similar a little through the light of optical thick layer.Such as, the mirror-reflection of top pattern shown in Fig. 9 A is considered.As mentioned above, enter through interface 37 optical stack light will part reflection and fractional transmission crosses this interface.Transmissive portion will enter layer 34 and arrive interface 44, and at this interface, transmission is entered layer 38 by part light, and part light will be reflected back and enters layer 34.This reflected light will arrive interface 37, and at this interface, light partly will transmit optical stack (contributing to mirror-reflection), and partly be reflected back and enter optical stack.When layer 34 be optics thick time, second (with the follow-up) contribution for mirror-reflection can not be interfered with being produced by the light of interface 37 initial reflection.But corresponding flux of energy will be added together.Based on the transmissivity (T) of (based on flux of energy) reflectivity (R) and interlayer interface, it is simple for calculating the mirror-reflection being incorporated to the heap of several optical thick layer.

Such as, recursion method below can be used.Suppose that the layer in Fig. 9 A is that optics is thick.So use the squared absolute value of corresponding fresnel coefficient, the reflectivity of interface 40 can be calculated.Then the refractive index entering the light of interface 42 can be calculated as follows:

${\tilde{R}}_i=R_i^{+}+\frac{T_i^2{\tilde{R}}_{i-1}}{1-R_i^{-}{\tilde{R}}_{i-1}}$

Wherein, for from layer 38 and (total) reflectivity entering into the light of system from 42, when light is propagated from layer 38, the single cross boundary reflection rate of interface 42, that identical interface is for spreading into the light reflectance of layer 38 (usually, ), and it is the total reflectivity of the light entered on interface 40.Then, identical equation can be used calculate the total reflectivity of the light entering interface 44, and the last reflectivity calculating interface 37.

If system comprises the mixing of optical thick layer and optical layers, transfer matrix formula then can be used to carry out the optical properties (reflectivity and transmissivity) of calculating optical thin layer, then can be approximately the independent interface (there is known reflectance/transmittance) in the thick heap of optics.

Similar technology can be utilized calculate the diffuse reflection that there is optical thick layer.

Figure 10 A represents the graphic user interface (GUI) 48 of the optical stack Optimization Software program be stored in computer-readable medium.GUI can show to allow technician to implement optimizer on the display being couple to processor, and optimizer is for finding out the optical stack 30 had producing preferred diffuse reflectance parameter.Processor is reading software instruction from the memory circuitry being couple to processor.Therefore, to be stored in the software instruction of the preferred parameter finding out optical stack 30 for running optimizatin program and to be couple in the storer of processor.Therefore, processor makes display show GUI, and technician can input the parameter area of optical stack by mouse, keyboard or any other suitable input equipment.Parameter can comprise the number of plies in heap, the environment that the refractive index of substrate 36 and optical stack 30 will be placed.

Therefore, in the exemplary GUI 48 of Figure 10 A, the refractive index of protective seam is 1, because it is air.The refractive index of substrate is listed as 1.5 and corresponds to the substrate 36 of optical stack 30.User can input the refractive index of any substrate or protective seam as required.Also the radius of nano wire 32 is have input in order to calculate scattering cross-section.According to an embodiment, in GUI 48, the line radius of input is 50nm.But, according to concrete nano wire 32 or in optical stack 30 use other nanostructureds, the radius of line can be any other suitable radius.User can select nano wire 32 to be positioned at which layer of optical stack 30 equally.In the GUI 48 of Figure 10 A example, line layer has been chosen as layer 2, and it corresponds to the layer 34 of optical stack 30.In the field being labeled as active layer parameter, user can the minimum thickness of input layer 34 and layer 36 and maximum gauge, corresponding to layer 1 and the layer 2 of GUI 48.In the example of Figure 10 A, the thickness range that layer 34 and layer 36 have is from 50nm to 200nm all.The ranges of indices of refraction of each layer of layer 34 and layer 36 is from 1.2 to 2.2.These scopes are restrictions, and in these restrictions, which parameter optimizer will for optical stack 30 Selection parameter to calculate producing best diffuse reflection.When executing a program, for the several optical stack of the parameter had in the input range of layer thickness, refractive index and optical wavelength, calculate diffuse reflection and mirror-reflection.According to said method or use according to other suitable methods of disclosure principle, optimizer calculates diffuse reflection and mirror-reflection.

In one embodiment, for the first group optical stack of the different parameters had in given range, optimizer calculates diffuse reflection, instead of for each possibility iterative computation diffuse reflection in input range.Then, optimizer selects second group of optical stack, and its parameter had produces minimum those parameters irreflexive in first group.In this way, optimizer continues the diffuse reflection of calculating optical heap, until find out preferred diffuse reflection.When not calculating each possibility iteration, optimizer effectively can be found out and produce preferred irreflexive parameter.By this method, the concrete configuration of the relatively low irreflexive optical stack 30 of generation can be selected.Due to previously described calculating or the irreflexive more short-cut method of estimation optical stack 30, this is possible.

Low diffuse reflection may be had there is unacceptable high mirror-reflection simultaneously.Due to this reason, be the field being labeled as maximum reflection below active layer parameter field.In this field, technician can specify the mirror-reflection of largest tolerable.In this illustration, maximum mirror-reflection elects 1.5% as.This means, when running transfer matrix for both mirror-reflection and diffuse reflection, preferred heap configuration will be chosen as the minimum diffuse reflectance that wherein mirror-reflection is not more than 1.5%.

In right side area, show optical stack.Optical stack 30 comprises the lower layer of refractive index 34, and this layer includes nano wire 32, is positioned at above the higher layer of refractive index 38.It is in the substrate 36 of 1.5 that layer 38 is positioned at refractive index.The refractive index of the air on optical stack is 1.In layer 34 and layer 38, in the left side of every layer, give thickness range and ranges of indices of refraction.In the left side of layer 34, this is labeled as w ₂=50nm to 200nm and n ₂=1.2 to 2.2.These are thickness range and the ranges of indices of refraction of layer 34, when calculating transfer matrix, will perform iteration to find out mirror-reflection and diffuse reflection within the scope of these.Equally, scope w is specified in the left side of layer 38 ₁=50nm to 200nm and n ₁=1.2 to 2.2.On the right side of layer 34, list preferred thickness and preferred index.Particularly, the preferred thickness of layer 34 is given 118.2nm.The preferred index of layer 34 is 1.2.The preferred thickness of high refractive index layer 38 is 50nm and preferred index is 1.7779.Under optical stack, mirror-reflection is listed as R ₀=0.0144 or be about 1.4%.Diffuse reflection R _unrestrainedbe listed as 5.469 × 10 ^-5.

Therefore, can the GUI 48 of optimization method of operating optical heap 30 allow user to input the first optical stack parameter or input parameter, and working procedure, perform computing and list preferred mirror-reflection and diffuse reflection and list the layer thickness and refractive index that produce these preferred result.According to the disclosure, it should be appreciated by those skilled in the art, many changes can be done for the method described and concrete GUI and the input and output provided thus.

Figure 10 B shows the GUI 50 according to an embodiment.GUI 50 relates to a kind of method, by the method, according to the preferred parameter that GUI 48 from Figure 10 A exports, can calculate the mirror-reflection for multi-wavelength and irreflexive detailed sketch.Particularly, user can input the number of plies (being 2 in this example), the substrate refractive index (1.5) of basalis 36, and the refractive index of protective seam (1) from preferably export.Then, can select active layer, in this example, active layer 2 is highlighted, and this means can the parameter of input layer 34 in preset parameter field.Preferred feature as determined by the GUI 48 of Figure 10 A is the thickness of layer 34 is 118.2nm, and refractive index is 1.2.Then, can active layer be highlighted, and the preferred feature of the layer 38 that the GUI 48 with reference to Figure 10 A calculates can be inputted.In this example, preferred feature is that thickness is 50nm and refractive index is 1.7779.Can the optical wavelength range of drawing that will generate of field (the being labeled as wavelength nm) input under fixed bed parameter.In this example, treat that the minimum wavelength of iteration is 300nm and maximum wavelength is 800nm, step-length 10nm.

Figure 10 C shows the drawing generated by the GUI 50 of Figure 10 B.Particularly, Figure 10 C is for mirror-reflection and irreflexive drawing in wavelength coverage specified in Figure 10 B.Crest is experienced when mirror-reflection and diffuse reflection are both slightly smaller than 400nm in ultraviolet range.Mirror-reflection declines and touches the minimum value of about 1% at wavelength 500nm place, and is increased to about 2.5% of 800nm place subsequently gradually.Diffuse reflection declines and touches low value at about 500nm place equally, but keeps relatively steady until 800nm always, is only being inclined upwardly of relaxing very much.In this example, diffuse reflection is maintained at about 5 × 10 in most of visible spectrum ^-5.For most of visible spectrum, mirror-reflection remains between 1% to 2%.

In the software instruction being stored in storer, the light of some wavelength can than the weighting larger of the light of other wavelength.When calculating transfer matrix, except the thickness range of layer and the ranges of indices of refraction of layer, for wavelength coverage, perform each transfer matrix.In one embodiment, when calculating preferred diffuse reflection, can than the reflection of other wavelength weighting larger in the reflection of some wavelength.Human eye is more responsive for other wavelength of some wavelength ratio.Therefore, for some optical stack, diffuse reflection can be slightly high at not too outstanding wavelength, and be close to minimum value at comparatively outstanding wavelength.In such examples, although at some wavelength not close to minimum diffuse reflection, diffuse reflection can be preferred diffuse reflection.Due to this reason, giving the larger weight of the diffuse reflection of some wavelength can be expect.In one example, visible spectrum increases progressively separately with 50nm between 400nm to 700nm.Can revise and store for calculating the software of diffuse reflection program to give different wave length higher or lower relative weighting.Such as, in one embodiment, the wavelength that the wavelength between 450nm to 600nm compares other is larger weightedly.Certainly, weighting can change the code be stored in storer technician select.For the calculating of mirror-reflection, also weighting can be implemented.

Figure 10 D shows the GUI of the software program according to an embodiment, and this software program is configured to find out has relatively low irreflexive optical stack.The GUI of Figure 10 D allows user to select the number of plies of optical stack 30 and nano wire 32 will be placed in which layer.In the example of Figure 10 D, the number of plies is three layers and nano wire layer is layer 2.After having selected nano wire layer, user can input thickness range and the ranges of indices of refraction of other layers in optical stack 30.But, in the embodiment of Figure 10 D, by using GUI, thickness and the refractive index of nano wire layer can not be changed; These parameters are fixing in the embodiment of Figure 10 D.By electing layer 1 as active layer, then can carry out the parameter of input layer 1 in the field input thickness scope marked and ranges of indices of refraction.In the same way, can the parameter of input layer 3.In figure 10d, user has selected the thickness range of layer 1 and layer 3 to be 30nm-300nm.The ranges of indices of refraction of layer 1 and layer 3 is chosen as 1.2-2.2.These scopes optimize routine in optimizing process by the scope from the one-tenth-value thickness 1/10 and refractive index value of wherein selecting layer.

Also by the field input value at mark, the refractive index of protective seam and basalis can be selected.In the example of Figure 10 D, these are chosen as 1 and 1.5 respectively.Once select these parameters, the fundamental figure of the layer of optical stack 30 has just shown on the right side of GUI, the refractive index of the position of its marker, the position of nano wire layer, ranges of indices of refraction and thickness range and protective seam and substrate.

User also by choosing suitable option in optimization field, can select to optimize routine and whether will optimize diffuse reflection or mirror-reflection.If select to optimize diffuse reflection, so also can by selecting maximum mirror-reflection in maximum mirror-reflection field input value.Program has low diffuse reflection by selecting and mirror-reflection is equal to or less than the optical stack of selected maximal value.Alternatively, if user have selected optimization mirror-reflection, so user can input the maximum diffuse reflectance of optical stack.

Finally, user can click start button with running optimizatin program.Then, optimizer calculates diffuse reflection and mirror-reflection for many possible optical stack, and selects to have relatively low diffuse reflection and mirror-reflection is less than the optical stack of selected maximal value.Then, the parameter of selected optical stack will be output.User also can by clicking suitable button, the optical stack of preserving before preserving best optical stack parameter or loading.

Figure 10 E shows according to Alternate embodiments for calculating and drawing the GUI of diffuse reflection and mirror-reflection.The GUI of Figure 10 E allows user to select the number of plies of optical stack 30 and nano wire 32 will be placed in which layer.In the example of Figure 10 E, the number of plies is three layers and nano wire layer is layer 2.Thickness and refractive index can not change by using GUI; These parameters are fixing in the embodiment of Figure 10 E.After have selected nano wire layer, user can input thickness and the refractive index of other layers in optical stack 30.By electing layer 3 as fixed bed, the parameter of input layer 3, then input thickness and refractive index under the field of mark.In the same way, can the parameter of input layer 1.Also the refractive index of protective seam and substrate can be selected; These parameters are chosen as 1 and 1.5 respectively.Once have selected these parameters, by the fundamental figure of the layer at the right side display optical heap 30 at GUI.In the example of Figure 10 E, nano wire layer is layer 2.

Also the wavelength coverage for calculating and draw and step sizes can be inputted.In the example of Figure 10 E, selected wavelength coverage is from 300nm to 800nm, step-length 10nm.After being filled with all fields, user can click start button to start calculation routine.For all wavelengths, calculate mirror-reflection and diffuse reflection.Can output curve diagram, show mirror-reflection and the diffuse reflection of each wavelength.Also can output formats, each diffuse reflection of step-length wavelength and the digital value of mirror-reflection in display wavelength coverage.The configuration of other GUI many is also possible, owing to will become obvious according to the disclosure.All these other configurations also drop within the scope of the disclosure.

As mentioned above, for diffuse reflection angle or diffuse reflection angular region selected by the surface relative to optical stack 30, diffuse reflection can be calculated.In some applications, understand and have the specific angle of how much light on the surface relative to optical stack 30 or multiple specific angle diffuse reflection to be useful.Accordingly, in one embodiment, the user of Optimization Software can select multiple angle, for these angles, for diffuse reflection is estimated in each optical stack configuration.

In one embodiment, for each iteration of optical stack parameter, calculate or estimate diffuse reflectance set.Each diffuse reflectance set comprises multiple diffuse reflectance of selecting the role relative to optical stack 30.Optimize routine can be configured to select optical stack to configure based on diffuse reflectance set.Particularly, diffuse reflectance set is compared mutually, and based on the comparison, optimize routine and optical stack can be selected to configure.Optimize routine the diffuse reflectance at each angle also can be configured to compare with threshold value.Then, part based on the comparing of threshold value, optimize routine and select a diffuse reflectance set.

In one example, technician can select 11 different reflection angle, calculates diffuse reflection for these angles.Can comprise relative to 11 angles of normal: 75 °, 60 °, 45 °, 30 °, 15 °, 0 ° (i.e. normal) ,-15 ° ,-30 ° ,-45 ° ,-60 ° and-75 °.Each diffuse reflectance set will comprise each selected the role diffuse reflectance.In this example, each diffuse reflectance set will comprise 11 diffuse reflectance.Certainly, more or less angle can be selected.The quantity at above-mentioned concrete angle and angle only provides in an illustrative manner.

In one example, relative to the large reflection angle of normal than closer to the angle in normal, there is higher threshold value.In other words, higher diffuse reflection can be tolerated in the large angle relative to normal.This is because in some embodiments, optical stack 30 can be included in display screen, in display screen, even more important in the display quality height very near the angle of normal.Relative to the large angle of normal corresponding to the peripheral visual angle of display screen including optical stack 30, and on these angles, maintain high optical quality can be comparatively unessential.Therefore, the diffuse reflection threshold value in the angle near normal can be much smaller relative to the threshold value at the angle away from normal.Observation display is carried out from close relative to the angle of display screen normal this is because more frequent.

In one embodiment, if any one diffuse reflectance exceedes corresponding diffuse reflectance threshold value in specific collection, the optical stack configuration of specific collection association therewith so can not be selected.

Alternatively, the diffuse reflectance of each set can be compared with single diffuse reflectance threshold value.If any one diffuse reflectance in specific collection exceedes diffuse reflectance threshold value, the optical stack configuration of specific collection association therewith so can not be selected.

In one embodiment, for each diffuse reflectance set, total diffuse reflectance can be calculated.Optimize the optical stack configuration that routine can select to correspond to minimum total diffuse reflectance.Calculate total diffuse reflectance can comprise and suing for peace to diffuse reflectance.Alternatively, calculate total diffuse reflectance can comprise for each reflection angle distributes respective weight factor.

In one embodiment, the average diffuse reflectance of each set can be calculated.The average diffuse reflection of set corresponds to the average of the diffuse reflectance calculated in set.Based on the average diffuse reflection of each set, optimize routine and optical stack can be selected to configure.

Optimize routine can be configured to distribute larger weight to the diffuse reflectance at some angles and distribute less weight to the diffuse reflectance at other angles.Optimize routine and also can distribute larger weight to the light of some wavelength at multiple angle.By examining the diffuse reflection in many wavelength of considering each reflection angle, optimizing routine and optical stack can be selected to configure.

Can implement many other optimization routine, software program and calculating or estimate in different angle irreflexive method.All these other routine and method include within the scope of the disclosure.

Figure 11 shows the system 60 according to an embodiment.System 60 comprises processor 62, and this processor is configured to perform the software instruction be stored in memory circuitry 64.Memory circuitry 64 stores data, and processor reads these data to perform above-mentioned optimization method.Load module 66 also couples with processor 62.At load module 66, the technician of operating system 60 can input the input parameter of optical stack 30, will optimize these parameters and the parameter of this optimization of output-response with preprocessor 62.Display 68 and processor 62 couple.Processor 62 can make GUI 48 or GUI 50 show on the display 60.Then, the technician of operation load module 66 by the GUI 48 on visual observation display 68 or GUI 50, can input suitable field.Equally, Optimal Parameters can show on display 68.

In one embodiment, system 60 comprises the manufacturing equipment 70 being couple to processor 62.In this embodiment, output parameter is directly outputted to manufacturing equipment by processor 62, and then manufacturing equipment deposits suitable layer and thickness as described in exporting in optimization.Such as, for optical stack 30, (optical stack 30 comprises: the low-index layer 34 being wherein embedded with nano wire 32, high refractive index layer 38 under low-index layer 34, and the substrate 36 be positioned under high refractive index layer 38), optimization output can be supplied to manufacturing equipment 70, then, this manufacturing equipment sedimentary deposit 38 layer 34 is deposited on layer 38 in substrate 36.Aforementioned system 60 provides by way of example.But also can comprise other assemblies many and software instruction of not describing herein.When user operation load module 66 is to input input parameter, input parameter is stored in the storer 64 coupled with processor 62.

In one embodiment, storer 64 can comprise EEPROM, ROM, SRAM, DRAM or any other suitable storer.Software instruction for performing optimizing process is stored in storer 64.Input instruction temporarily can be stored in storer 64 or be couple in the independent buffer memory of processor.Any suitable assembly can be used for storing input parameter and software instruction, they can be read by the processor 62 used.Alternatively, selection can being used for the output of the process of the parameter of optics to manufacture optical stack, being physically coupled at the circuit selecting to use in optical stack parameter without the need to making manufacturing equipment.

Figure 12 shows the process flow diagram of the method for the parameter for optimizing optical heap 30.80, layer parameter is input to processor by technician.Then, input parameter is stored in and is couple in the storer of processor.Input parameter can comprise the number of plies of optical stack 30, the thickness range in optical stack 30 middle level, the ranges of indices of refraction in optical stack 30 middle level, the wavelength coverage of diffuse reflection to be calculated and mirror-reflection and the relative weight value treated to different wave length in wavelength coverage to be allocated.82, the field of the position of nano wire 32 in processor calculating optical heap 30.The calculating of the field of nano wire position can be able to provide the suitable calculating of field, nano wire 32 position to perform by use transfer matrix or any other.In alternative embodiments, as mentioned above, the calculating of field, nano wire position can comprise the field coming from scattered light in the past.

84, calculate the scattering cross-section of nano wire 32.The scattering cross-section of nano wire 32 gives the instruction of scattering direction and the value diffused from nano wire 32.Nano wire 32 can diffuse in any direction.86, processor, based on the field of nano wire position calculated and scattering cross-section, calculates diffuse reflection.In one embodiment, pile each layer of interface place and the transfer matrix through the transmittance and reflectance diffused of every layer in 30 by calculating optical and estimate diffuse reflection.

88, for the many optical stack 30 within the scope of input parameter, repeatedly perform the field of nano wire 32 position, the scattering cross-section of nano wire 32 and arrive the calculating diffused on surface.In one embodiment, for first group of optical stack, perform diffuse reflection and calculate.First group of optical stack can have the refractive index etc. of layer thickness value, layer, is chosen as the first wide sampling providing optical stack in possible input range.Such as, first group of optical stack can comprise such optical stack, that is, the ground floor of optical stack has minimum thickness, maximum gauge respectively and is scattered in some thickness therebetween.For first group, calculate diffuse reflection and compare mutually.

Then, the diffuse reflection of second group of optical stack is calculated.In one embodiment, part selects the parameter of second group of optical stack based on the diffuse reflection of first group.Such as, second group of optical stack comprises one or more parameters of having close to the optical stack of one or more parameters producing minimum diffuse reflectance in first group of optical stack.This allows processor not having to find out preferred diffuse reflectance in each possible optical stack situation in computer capacity.But processor can be analyzed its parameter most probable and have low irreflexive optical stack.When time and computing power allow, this process can be long enough to obtain enough deep optimizing process as required.Finally, processor can select the optical stack parameter producing best diffuse reflectance.92, form optical stack 30 by the deposition layer had corresponding to the feature of best output parameter.

Can be used to manufacture and be known in the art according to the material of the layer of optical stack of the present invention.The example of these materials comprises, such as, and TiO ₂(R _d=1.8), polyimide (R _d=1.7) and be embedded with such as ZnO, ZrO ₂and TiO ₂the transparent polymer of high index of refraction particle.

Table 1 shows the optical material of some relative low-refractions, and these materials may be used for the layer of the optical stack of producing according to the present invention.

Table 1

Table 2 shows the optical stack material of some relative highs index of refraction, and these materials can be used for the layer of the optical stack of producing according to the present invention.

Table 2

Should understand in this area, adopt coating, printing, sputtering or other technology to deposit the method for the optical stack with desired thickness.About paint-on technique, especially at " Modern coating and Drying Technology (modern coating and dry technology) " (John Wiley & Sons of EdwardCohen and Edgar Gutoff, 1992, see pp.11 and 25-28) in discuss the coating with required wet-film thickness, it is incorporated herein by reference.The build resulting from given wet-film thickness depends on the composition of the coating solution of use, and this to be those skilled in the art understood.Such as, at U.S. Patent number 8,094,247 and U.S. Patent Application No. 12/380,293 and 12/380, disclose the method for coating and printing nano wire conductive layer in 294, each of above-mentioned application is incorporated herein by reference.

Figure 13 shows according to the method for an embodiment for the parameter of optimizing optical heap 30.94, be input in processor by the input parameter of optical stack, input parameter is stored in memory circuitry by this processor.Storer execution is stored in the software instruction of storer to start the method for optimizing optical heap parameter.96, processor calculates the transfer matrix inciding the light of optical stack, and the value that this optical stack has is located in step 94 and is input in the parameter area of processor.By calculating transfer matrix, the mirror-reflection on the surface 37 from optical stack 30 can be obtained.Also by calculating transfer matrix, the field of nano wire 32 position in heap 30 can be calculated 98.

99, calculate the scattering cross-section of nano wire 32.The scattering cross-section of nano wire 32 is instructions of the value diffused of scattering on each direction in optical stack 30.100, in optical stack 30 from nano wire 32 the diffusing of scattering in all directions, calculate transfer matrix.The part that transfer matrix gives the surface 37 arriving optical stack 30 diffuses.

102, processor checks whether the more iteration needing input parameter.In one embodiment, for first group of optical stack, processor will perform diffuse reflection and calculate.Such as, if the possible thickness range of ground floor is between 50nm to 200nm, so processor when keeping other parameter constant, can calculate the diffuse reflectance of minimum and maximum thickness and some thickness between them.Diffuse reflectance is compared, and processor is based on the iterative value of irreflexive alternative next time of first group of optical stack.104, the parameter of processor selection iteration next time, and processor performs mirror-reflection, the field of nano wire position and irreflexive calculating for new parameter sets.106, preferred diffuse reflection (this diffuse reflection set is for input parameter range computation) selected by processor from diffuse reflection set, and exports the concrete preferred parameter producing preferred irreflexive optical stack 30.

Figure 14 shows the tablet device 120 including the optical stack 30 according to an embodiment in touch display screen.The optical stack 30 manufactured has the layer parameter obtained from above-mentioned optimizing process.The display of tablet device 120 does not suffer above-mentioned emulsus or fuzzy problem.

Although this document describes concrete layer, thickness and the attribute of optical stack 30, other suitable configurations many of optical stack are also possible, comprise more or less layer, multi-layer nano structure or any other suitable feature.All these heaps all drop in the scope of the present disclosure.

Equally, although present disclosure discloses the concrete grammar of the optical signature for optimizing optical heap 30, in this method, other suitable changes many are also possible.Such as, field, mirror-reflection and diffuse reflection can be similar to by other means, but still within the scope of the disclosure.More, less or different parameters can be input in processor to optimize heap.Equally, except mirror-reflection and diffuse reflection, also optimization can be performed for other parameters.Word " the best " does not should be understood to and means best possible configuration, but a value or configuration are better than other values or configuration.Equally, optimum reflectivity must not mean minimum reflectivity, but is the reflectivity expected in possible reflectivity.

Above-mentioned numerous embodiments can be carried out combine to provide further embodiment.All United States Patent (USP)s, U.S. Patent Application Publication, U.S. Patent application, foreign patent, foreign patent application and this instructions of listing in that quote in this instructions and/or request for data page are all incorporated to herein by reference with reference to ground and/or the non-Patent data be listed in request for data table.Adopt if necessary different patents, application and publication concept to provide further embodiments, can modify to embodiment aspect.

According to above detailed description, can be carried out these to embodiment and change and other changes.Usually, in the following claims, the term used should not be interpreted as claim to be restricted to disclosed embodiment in the specification and claims, but should be interpreted as the equivalent four corner comprising all possible embodiment and these claims.Therefore, claim can't help the disclosure and limited.

Claims (31)

1. a method, comprising:

For the optical stack with nano wire selects optical stack parameter;

According to described optical stack parameter, each configuration for multiple optical stack calculates multiple diffuse reflectance set, and each diffuse reflectance set comprises the multiple diffuse reflectance for each reflection angle from described optical stack;

At least in part based on described multiple angle described diffuse reflectance set relatively select described optical stack configure in one of; And

According to the configuration of selected optical stack, form the layer of described optical stack.

2. the method for claim 1, comprising:

For each optical stack configuration one of in the configuration of described optical stack, calculate the multiple specular reflectance values being used for described multiple reflection angle.

3. the method for claim 1, comprising:

Calculate multiple specular reflectance values, wherein each specular reflectance values is used for respective optical stack configuration;

Described specular reflectance values is compared with predetermined specular reflectance values; And

Based on the comparing of described predetermined specular reflectance values, one of in selecting described optical stack to configure.

4. method as claimed in claim 2, wherein, comprises one of in selecting described optical stack to configure: the optical stack configuration selecting to have the specular reflectance values lower than described predetermined specular reflectance values.

5. the method for claim 1, comprising:

Predetermined to the diffuse reflectance of each set and at least one diffuse reflectance is compared; And

At least in part based on the comparing of at least one predetermined diffuse reflectance described, one of in selecting described optical stack to configure.

6. method as claimed in claim 5, wherein, comprises one of in selecting described optical stack to configure: select the diffuse reflectance of wherein each reflection angle to configure lower than the optical stack of at least one predetermined diffuse reflection threshold value.

7. comprise one of in the method for claim 1, wherein selecting described optical stack to configure: select to configure corresponding to the optical stack of minimum diffuse reflectance.

8. method as claimed in claim 1, comprising:

Respective total diffuse reflectance is calculated for each set; And

Select the optical stack configuration corresponding to minimum total diffuse reflectance.

9. method as claimed in claim 8, wherein, calculates described total diffuse reflectance separately for each set and comprises: to the described diffuse reflectance summation of this set.

10. method as claimed in claim 8, wherein, calculates described total diffuse reflectance separately and comprises: be that described diffuse reflection distributes respective weight factor according to each reflection angle.

11. the method for claim 1, comprising:

Calculate multiple respective diffuse reflection mean value, each diffuse reflection mean value corresponds to the mean value of the described diffuse reflectance of set separately; And

At least in part based on described multiple diffuse reflection mean value, described optical stack is selected to configure.

The method of claim 1, wherein 12. calculate described diffuse reflectance comprises: the scattering cross-section calculating described nano wire.

The method of claim 1, wherein 13. calculate described diffuse reflectance comprises: configure for each optical stack, respectively:

Calculate the electromagnetic field of the incident light of the position of described nano wire in described optical stack; And

Calculate the transfer matrix of the light of described nano wire scattering in described optical stack.

14. methods as claimed in claim 13, wherein, calculate described diffuse reflectance and comprise: based on the field of the incident light of the described position of described scattering cross-section and described nano wire, calculate the amount of the light from described nano wire scattering.

15. methods as claimed in claim 14, wherein, the field calculating described incident light comprises: the electromagnetic field calculating the described position diffusion light at described nano wire.

16. the method for claim 1, wherein described multiple optical stack parameter comprise the number of plies of described optical stack.

17. layers the method for claim 1, wherein forming described optical stack comprise:

Substrate forms ground floor; And

Form the second layer on the first layer, described nano wire is placed in described ground floor or the second layer.

18. 1 kinds of methods, comprising:

Input optical stack parameter is stored in the memory circuitry coupled with processor;

In described processor, multiple optical stack is configured, calculate multiple diffuse reflectance set, wherein each optical stack has each self-configuring according to described optical stack parameter, each diffuse reflectance set comprises multiple diffuse reflectance of each reflection angle for the surface from described optical stack, calculate described diffuse reflection set to comprise, for each configuration, respectively:

Calculate the electromagnetic field value of the incident light of position in the optical stack corresponding with nano wire position in described optical stack; And

Be based in part on described electromagnetic field value, calculate transfer matrix to be provided for described multiple diffuse reflectance of multiple reflection angle on the surface from described optical stack,

Optical stack is selected to configure based on described diffuse reflectance.

19. methods as claimed in claim 18, wherein, select described optical stack to configure and comprise: select the optical stack corresponding to minimum diffuse reflectance to configure.

20. methods as claimed in claim 18, comprising:

For each set, calculate respective total diffuse reflectance; And

Select the optical stack configuration corresponding to minimum total diffuse reflectance.

21. methods as claimed in claim 18, wherein, described input optical stack parameter comprises the ranges of indices of refraction of at least one deck of described optical stack.

22. methods as claimed in claim 21, wherein, selected optical stack configuration comprises the refractive index come from described ranges of indices of refraction.

23. methods as claimed in claim 18, wherein, described input optical stack parameter comprises the thickness range of the layer of described optical stack.

24. method as claimed in claim 23, wherein, selected optical stack configures the thickness comprised in the thickness range of the layer coming from described optical stack

25. methods as claimed in claim 17, wherein, calculate described diffuse reflectance set and comprise: the scattering cross-section calculating described nano wire.

26. 1 kinds of systems, comprising:

Processor;

The storer coupled with described processor;

The input component coupled with described processor, be configured to the first parameter receiving optical stack, the set that described processor is configured to the incident light electromagnetic field value calculating the position corresponding with nano wire in optical stack, the light scattering calculating described nano wire distribute, calculate the set of multiple diffuse reflectance of surface of described optical stack, and estimate the set of the second parameter of described optical stack, described second parameter corresponds to the set of preferred diffuse reflectance, and the set of each diffuse reflectance comprises multiple diffuse reflectance of each reflection angle for the surface from described optical stack; And

Be couple to the output of described processor, be configured to receive described second parameter from described processor.

27. systems as claimed in claim 26, comprise the display coupled with described output, and described display is configured to show described second parameter.

28. systems as claimed in claim 26, comprise the precipitation equipment coupled with described output, and described precipitation equipment is configured to receive described second parameter, and deposits the first optical layers of described optical stack according to described second parameter.

29. 1 kinds of methods, comprising:

By the parameters input of optical stack to processor;

In described processor, estimate the set of the electromagnetic field value of the incident light of the position corresponding with nano wire in optical stack;

In described processor, estimate the light scattering distribution of described nano wire;

In described processor, based on electromagnetic field value and described scattering cross-section, estimate multiple diffuse reflectance set of the surface of described optical stack, each diffuse reflectance set comprises multiple diffuse reflectance of each reflection angle for the described surface from described optical stack; And

The optical stack exported corresponding to selected diffuse reflectance set from described processor configures.

30. method as claimed in claim 29, wherein, estimate that the set of electromagnetic field value comprises: calculate the first transfer matrix according to the parameter of described optical stack.

31. method as claimed in claim 30, wherein, estimates that described diffuse reflectance set comprises: calculate the second transfer matrix according to the parameter of described optical stack.