CN104216077B - A kind of photoelectricity interconnect device and assembly method thereof - Google Patents
A kind of photoelectricity interconnect device and assembly method thereof Download PDFInfo
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- CN104216077B CN104216077B CN201410487544.5A CN201410487544A CN104216077B CN 104216077 B CN104216077 B CN 104216077B CN 201410487544 A CN201410487544 A CN 201410487544A CN 104216077 B CN104216077 B CN 104216077B
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
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Abstract
The invention discloses a kind of photoelectricity interconnect device and assembly method thereof, its device includes: slide glass；Photodevice matrix, is fixed on the surface of described slide glass, and described slide glass is provided with the photoelectric device connection line of described photodevice matrix；Substrate；Photoelectric device chip, fixes on the substrate, and described photoelectric device chip is connected with the photoelectric device connection line on described slide glass by electric connection line；And first is heat sink, and/or second is heat sink, and described first heat sink fixing is used for cooling down described photoelectric device chip on the substrate, described second heat sink fixing on the substrate, be used for cooling down described photodevice matrix.A kind of photoelectricity interconnect device of the present invention and assembly method thereof, be provided with photodevice matrix and/or the radiating treatment of photoelectric device chip, improve photodevice matrix and/or the performance of photoelectric device chip in this device.
Description
Technical field
The present invention relates to field of photoelectric technology, particularly relate to a kind of photoelectricity interconnect device and assembly method thereof.
Background technology
Along with electronics integrated level and the rapid raising of operating frequency, the parasitic effect of traditional signal of telecommunication interconnection
Should become very notable, signal cannot be transmitted efficiently in many occasions, it is impossible to effectively solve electromagnetic interference,
This traditional electric interconnected method has begun to become and limits the bottleneck that electronic product is fast-developing.Interconnect with electricity
Comparing, optical interconnection can relatively well make up the deficiency of electricity interconnection, has the potential advantages of brilliance, in circuit
The photoelectricity interconnection technique introducing light path can effectively solve the problem that " electronic bottleneck " effect.Therefore, photoelectricity interconnection skill
Art becomes the technology trends that electron trade is new.
Providing a kind of photoelectricity interconnect device in prior art, Fig. 1 is photoelectricity interconnect device in prior art
Structural representation.As it is shown in figure 1, this optical-electric module assembling structure include slide glass 1, photodevice matrix 2,
Bonding wire 3, photoelectric device chip 4, the surface of described slide glass 1 is provided with fiber orientation through hole, solder bump
And metal line；Described photodevice matrix 2 is welded with the solder bump on slide glass 1 by face-down bonding technique
Connect and be fixed on the surface of described slide glass 1, photoelectric device chip 4 and one of the metal line on slide glass 1
Hold and realized and the connection of slide glass 1 by bonding wire welding, and by the plastic deformation of bonding wire 3 by slide glass 1 together with
Photodevice matrix 2 erects relative to photoelectric device chip 4 and fixes, and photoelectric device chip 4 assembles
On substrate, optical fiber is realized and being coupled and aligned of photoelectric device by fiber orientation through hole.
Above-mentioned photoelectricity interconnect device have the disadvantage that in photoelectricity interconnect device not to photodevice matrix and
/ or the radiating treatment of photoelectric device chip, cause photodevice matrix and/or photoelectric device chip worked
Unstable properties in journey, reduces photodevice matrix and/or the performance of photoelectric device chip.
Summary of the invention
The present invention completes to solve above-mentioned deficiency of the prior art, it is an object of the invention to carry
Go out a kind of photoelectricity interconnect device and assembly method thereof, this photoelectricity interconnect device be provided with photodevice matrix and/
Or the radiating treatment of photoelectric device chip, it is ensured that photodevice matrix and/or photoelectric device chip are worked
Stability in journey, improves photodevice matrix and/or the performance of photoelectric device chip.For reaching this purpose,
The present invention is by the following technical solutions:
Embodiment of the present invention provides a kind of photoelectricity interconnect device, including:
Slide glass；
Photodevice matrix, is fixed on the surface of described slide glass, and described slide glass is provided with described phototube
The photoelectric device connection line of part array；
Substrate；
Photoelectric device chip, fixes on the substrate, and described photoelectric device chip passes through electric connection line and institute
State the photoelectric device connection line on slide glass to connect；And
First is heat sink, and/or second is heat sink, described first heat sink fixing on the substrate, be used for cooling down institute
State photoelectric device chip, described second heat sink fixing on the substrate, be used for cooling down described photoelectric device battle array
Row.
Further, described photoelectric device chip is fixed on described first heat sink surface.
Further, described photoelectric device chip is by bonding wire and the photoelectric device connection line on described slide glass
Connect, and make described slide glass together with photodevice matrix relative to described light by the plastic deformation of described bonding wire
Electrical part chip erects and fixes.
Further, described second heat sink is provided with U-shaped groove, and the length of described U-shaped groove is more than photoelectricity
The length of device chip, described second heat sink two ends buckle frame is also fixed on the substrate, described photoelectric device
The surface of array posts and fixes on described second heat sink side.
Further, described photoelectric device chip is fixed on described first heat sink surface by heat-conducting glue solid
Fixed, the surface of described photodevice matrix posts and fixes passes through heat-conducting glue on described second heat sink side
Fixing.
Further, the depth of groove span of described U-shaped groove is 200um～400um.
Further, the middle part of described U-shaped groove is provided with bulge-structure.
Further, described first heat sink and the second heat sink material is copper, aluminum or its alloy.
Further, described photodevice matrix includes at least one photoelectricity being fixed on described slide surface
Device, described photoelectric device is laser instrument and/or photodetector.
Further, described photoelectric device chip is laser driving chip or photo detector signal amplification core
Sheet.
Embodiment of the present invention also provides for the assembly method of a kind of photoelectricity interconnect device, comprises the following steps:
There is provided one first heat sink；
Photoelectric device chip is fixed on described first heat sink surface, and
The fixing photodevice matrix being connected as a single entity is arranged on described first heat sink surface with slide glass；
By described first heat sink fixing on the substrate；
Described photoelectric device chip is fixed on the substrate, and
By described photoelectric device chip by electric connection line with the photoelectric device connection line on described slide glass even
Connect；
By the described photodevice matrix that is connected to one with described slide glass relative to described photoelectric device core
Sheet erects and fixes.
Further, further comprising the steps of: by the second heat sink two ends buckle frame and fixing on the substrate,
Described second heat sink is provided with U-shaped groove, and the length of described U-shaped groove is more than described photoelectric device chip
Length, the surface of described photodevice matrix posts and fixes on described second heat sink side.
Further, described photoelectric device chip is by bonding wire and the photoelectric device connection line on described slide glass
Connect, and make described slide glass together with photodevice matrix relative to described light by the plastic deformation of described bonding wire
Electrical part chip erects and fixes.
Further, described photoelectric device chip is fixedly connected on described substrate by bonding wire.
A kind of photoelectricity interconnect device of present invention offer and assembly method thereof, this photoelectricity interconnect device is provided with light
Electrical part array and/or the radiating treatment of photoelectric device chip, be fixedly installed for cooling down photoelectricity on substrate
The first of device chip is heat sink and/or heat sink for cooling down the second of photodevice matrix, solves photoelectric device
Array and/or the most overheated wavelength that causes of photoelectric device chip is unstable, launch power produces and become
The problems such as change, photosignal degradation, electric property reduction, it is ensured that photodevice matrix and/or photoelectricity
Device chip stability in the course of the work, improves the property of photodevice matrix and/or photoelectric device chip
Energy.
Accompanying drawing explanation
In order to the technical scheme of exemplary embodiment of the present is clearly described, below to describing embodiment
The accompanying drawing used required in does one and simply introduces.Obviously, the accompanying drawing introduced is that the present invention is to be described
The accompanying drawing of a part of embodiment rather than whole accompanying drawings, for those of ordinary skill in the art, not
On the premise of paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the structural representation of photoelectricity interconnect device in prior art；
Fig. 2 is the structural representation of the photoelectricity interconnect device that the embodiment of the present invention one provides；
Fig. 3 is the first heat sink structural representation that the embodiment of the present invention one provides；
Fig. 4 is the second heat sink structural representation that the embodiment of the present invention one provides；
Fig. 5 is the second heat sink structural representation that the embodiment of the present invention two provides；
Fig. 6 is the flow chart of the photoelectricity interconnect device assembly method that the embodiment of the present invention three provides；
Fig. 7 is the assembling schematic diagram one that the embodiment of the present invention three provides；
Fig. 8 is the assembling schematic diagram two that the embodiment of the present invention three provides；
Fig. 9 is the assembling schematic diagram three that the embodiment of the present invention three provides；
Figure 10 is the assembling schematic diagram four that the embodiment of the present invention three provides；
Figure 11 is the assembling schematic diagram five that the embodiment of the present invention three provides；
Figure 12 is the flow chart of the photoelectricity interconnect device assembly method that the embodiment of the present invention four provides；
Figure 13 is the assembling schematic diagram that the embodiment of the present invention four provides.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearer, below with reference to the embodiment of the present invention
In accompanying drawing, by detailed description of the invention, be fully described by technical scheme.Obviously, described
Embodiment be a part of embodiment of the present invention rather than whole embodiments, enforcement based on the present invention
Example, the every other enforcement that those of ordinary skill in the art obtain on the premise of not making creative work
Example, within each falling within protection scope of the present invention.
Embodiment one:
Fig. 2 gives the structural representation of the photoelectricity interconnect device that embodiment one provides.
As in figure 2 it is shown, the photoelectricity interconnect device that the present embodiment one provides includes:
Slide glass 1；
Photodevice matrix 2, is fixed on the surface of slide glass 1, slide glass 1 is provided with photodevice matrix 2
Photoelectric device connection line；
Substrate 7；
Photoelectric device chip 4, is fixed on substrate 7, and photoelectric device chip 4 is by electric connection line 3 and load
Photoelectric device connection line on sheet 1 connects；And
First heat sink 5, and/or second heat sink 6, first heat sink 5 is fixed on substrate 7, is used for cooling down light
Electrical part chip 4, second heat sink 6 is fixed on substrate 7, is used for cooling down photodevice matrix 2.
Slide glass 1 in the present embodiment can use potsherd or high-flatness semiconductor wafer.The table of slide glass 1
Being provided with photoelectric device connection line on face, photoelectric device connection line includes solder bump and metal line,
Solder bump is used for using face-down bonding technique to weld photodevice matrix 2 and being fixed on the surface of slide glass 1,
On slide glass 1, one end of metal line is connected by electric connection line with photoelectric device chip 4.Preferably, it is electrically connected
Wiring is bonding wire 3.
Photodevice matrix 2 includes at least one photoelectric device being fixed on slide glass 1 surface, photoelectric device
For laser instrument and/or photodetector, wherein laser instrument is preferably planar laser with vertical cavity, and photodetector is excellent
Elect PIN photoelectric detector as.Photodevice matrix 2 is fixed on the surface of slide glass 1.
Photoelectric device chip 4, is fixedly installed on substrate 7, and photoelectric device chip 4 surface surrounding is arranged
There are four row's pad array.Wherein, the surface of photoelectric device chip 4 pad battle array on the side of slide glass 1
Row and one end of the metal line on slide glass 1 surface, use bonding wire bonding technology to realize connecting by bonding wire 3,
And make slide glass 1 together with photodevice matrix 2 relative to photoelectric device chip 4 by the plastic deformation of bonding wire 3
Erect；Pad array on other three sides, photoelectric device chip 4 surface is entered with substrate 7 by bonding wire 3
Row welding, is connected photoelectric device chip 4 with substrate 7 and fixes.Photoelectric device chip 4 drives for laser instrument
Dynamic chip or photo detector signal amplification chip.
Substrate 7, substrate 7 is provided with a breach 70, and breach 70 can be U-shaped breach.Can be by the first heat
Heavy 5 arrange and are fixed on the substrate 7 in breach 70, it is also possible to be fixed on base under breach by first heat sink 5
On the surface of plate 7.
First heat sink 5, it is fixed on substrate 7, is used for cooling down photoelectric device chip 4.As it is shown on figure 3, the
The shape of one heat sink 5 can be cuboid, it is preferable that the material of first heat sink 5 is copper, aluminum or its alloy,
Copper, aluminum or its alloy have good heat conductivity, good heat dissipation effect, it is possible to well realize photoelectric device core
The cooling of sheet 4 and heat radiation, it is also possible to there is the material of cooling and thermolysis for other.Photoelectric device chip
4 can be fixed on the surface of first heat sink 5 by heat-conducting glue, and heat-conducting glue has preferable cold-and-heat resistent alternation
Performance, ageing-resistant performance and electrical insulation capability, and there is good cementability, use heat-conducting glue fixed party
Photoelectric device chip 4 can be preferably fixed on the surface of first heat sink 5 by face, on the other hand can make
Obtain first heat sink 5 preferably photoelectric device chip 4 cooled down and dispel the heat.
Second heat sink 6, it is fixed on substrate 7, is used for cooling down photodevice matrix 2.Preferably, the second heat
The material of heavy 6 is copper, aluminum or its alloy, it is possible to well realize cooling and the heat radiation of photodevice matrix 2,
Can also have for other and cool down and the material of thermolysis.As shown in Figure 4, second heat sink 6 one is offered
U-shaped groove 61, the length of U-shaped groove 61 more than the length of photoelectric device chip 4, U-shaped groove 61 deep
Degree span is 200um～400um.Offering the reason of U-shaped groove 61 is to prevent second heat sink 6 and light
Electrical part chip 4 or bonding wire 3 contact, and damage photoelectric device chip 4 or bonding wire 3.U-shaped groove 61
The degree of depth can be come according to the fore-and-aft distance of second heat sink 6 with photoelectric device chip 4 and photodevice matrix 2
Determine, should ensure that second heat sink 6 does not contacts with photoelectric device chip 4 and bonding wire 3, ensure photoelectricity again
The surface of device array 2 can post and fix in the side of second heat sink 6, it addition, photodevice matrix
2 and second heat sink 6 laminating the biggest second heat sink 6 pairs of photodevice matrix 2 of area cooling and heat radiation effect
Fruit is the best.Photodevice matrix 2 can be fixed on second heat sink 6 by heat-conducting glue, uses heat-conducting glue
Photodevice matrix 2 can be preferably fixed on the side of second heat sink 6 by fixed party face, the opposing party
Face enables to second heat sink 6 and preferably cools down photodevice matrix 2 and dispel the heat.Second heat sink 6
Two ends buckle frame and be fixed on substrate 7, fixing means is for being welded on substrate 7 surface or screw is fixed on
It is fixed on bottom substrate 7 on substrate 7 surface or through substrate 7.Second heat sink 6 pairs of photodevice matrix 2
Also there is the effect of support.
The photoelectricity interconnect device that the embodiment of the present invention one provides, is provided with radiating treatment in photoelectricity interconnect device
Structure that is first is heat sink 5 and/or second heat sink 6, and first heat sink 5 is fixed on the lower section of photoelectric device chip 4,
For cooling down and remove the heat of photoelectric device chip 4.Second heat sink 6 two ends buckle frames are also fixed on substrate 7
On, the surface of photodevice matrix 2 posts and fixes in the side of second heat sink 6, and second heat sink 6 is used for
Cool down and remove the heat of photodevice matrix 2, solve photodevice matrix 2 the most overheated
And cause wavelength instability, launch power generation change, and photoelectric device chip 4 mistake in the course of the work
The problem that thermal conductance causes photosignal degradation, electric property reduces.First heat sink 5 and/or second heat 6 is sunk
Ensure that photodevice matrix 2 and/or photoelectric device chip 4 stability in the course of the work, improve light
Electrical part array 2 and/or photoelectric device chip 4 and the performance of whole photoelectricity interconnect device, extend whole
The life-span of photoelectricity interconnect device.
Embodiment two:
The photoelectricity interconnect device structure that the present embodiment and embodiment one are given is essentially identical, except for the difference that this device
Second heat sink 62 U-shaped groove 61 in the middle part of there is a bulge-structure 63, as it is shown in figure 5, second is heat sink
Being provided with a bulge-structure 63 in the middle part of the U-shaped groove 61 of 62, the shape and size of bulge-structure 63 can root
Determining according to the needs of practical set, the reason arranging bulge-structure 63 is: on the one hand so that build is less
The surface of photodevice matrix 2 can post and fix on the side of second heat sink 62, so that second
Heat sink 62 heats that can cool down and remove photodevice matrix 2, on the other hand, by forming U-shaped groove
The surface that local crowning in 61 rather than integrated convex meet photodevice matrix 2 posts and fixes second
On the side of heat sink 62, save the material of second heat sink 62, reduce cost.
Embodiment three:
Fig. 6 is the flow chart of the photoelectricity interconnect device assembly method that the embodiment of the present invention three provides, such as Fig. 6 institute
Show that a kind of photoelectricity interconnect device assembly method that the present embodiment provides comprises the following steps:
Step S101: provide one first heat sink 5；
First heat sink 5 for cooling down and remove the heat of photoelectric device chip 4, it is preferred that first heat sink 5
Material be copper or aluminum.
Step S102: photoelectric device chip 4 is fixed on the surface of first heat sink 5, and by fixing company
The photodevice matrix 2 and the slide glass 1 that are integrated are arranged on the surface of first heat sink 5；
Concrete, as it is shown in fig. 7, with reference to Fig. 7, photoelectric device chip 4 is fixed on first heat sink 5
On surface, photodevice matrix 2 and slide glass 1 are welded by face-down bonding technique and are fixed together, and are formed as
Integrative-structure, is also temporarily fixed at integrative-structure on the surface of first heat sink 6, and interim fixing reason exists
Integrative-structure is erected relative to photoelectric device chip 4 in follow-up, on the other hand interim fixing in order to
Prevent the movement of integrative-structure.Method of temporarily fixing can be fixture pressure holding, hand-held fixing or temporarily paste.
Step S103: be fixedly installed on first heat sink 5 on substrate 7；
Concrete, as shown in Figure 8, with reference to Fig. 8, the structure that step S102 is formed is placed on substrate 7,
It is provided with breach, it is preferred that the structure that step S102 is formed is placed on the breach of substrate 7 on substrate 7
In 70.
Step S104: photoelectric device chip 4 is fixedly installed on substrate 7, and by photoelectric device chip
4 are connected with the photoelectric device connection line on slide glass 1 by electric connection line；
Concrete, as it is shown in figure 9, with reference to Fig. 9, the surface surrounding of photoelectric device chip 4 has four row's welderings
Disk array, electric connection line is preferably bonding wire 3, and bonding wire 3 is for photoelectric device chip 4 and slide glass 1 and substrate 7
Connection and fixing.The wherein pad array of the side of close slide glass 1 on photoelectric device chip 4 surface, with
One end of the metal line in photoelectric device connection line on slide glass 1 is welded, by phototube by bonding wire 3
Part chip 4 is connected with slide glass 1 and fixes；The pad array of other three sides on photoelectric device chip 4 surface is led to
Cross bonding wire 3 to weld with substrate 7, photoelectric device chip 4 is connected with substrate 7 and fixes.Bonding wire 3
The welding method used is spun gold bonding wire craft.
Step S105: by the photodevice matrix 2 that is connected to one with described slide glass 1 relative to photoelectricity
Device chip 4 erects and fixes.Concrete, as shown in Figure 10, with reference to Figure 10, slide glass 1 together with
The integrative-structure that photodevice matrix 2 is formed erects relative to photoelectric device chip 4 and fixes, and is adopted
Method be to support whole slide glass 1 and photodevice matrix 2 by the plastic deformation of bonding wire 3.
Being coupled and aligned with photodevice matrix 2 by optical fiber 8 and fix, as shown in figure 11, optical fiber 8 is by inserting
Enter the fiber orientation through hole on slide glass 1 to realize being directed at the optical coupled of photodevice matrix 2.
The photoelectricity interconnect device assembly method that the embodiment of the present invention three provides, is fixed on photoelectric device chip 4
On the surface of first heat sink 5；To be welded by face-down bonding technique and the photoelectric device battle array of the structure that is fixed as one
Row 2 and slide glass 1 are temporarily fixed on the surface of first heat sink 5, and wherein photodevice matrix 2 is positioned at slide glass
On the surface of 1, slide glass 1 is positioned on the surface of first heat sink 5；Surface configuration is had photoelectric device chip 4
It is positioned on substrate 7 with the first heat sink 5 of slide glass 1 and photodevice matrix 2；By bonding wire 3 respectively
Connect and fixing photoelectric device chip 4 and slide glass 1, photoelectric device chip 5 and substrate 7；By bonding wire 3
Slide glass 1 is erected relative to photoelectric device chip 4 together with photodevice matrix 2 and fixes by plastic deformation.
It is fixed on first heat sink 5 on substrate 7, for cooling down and remove the heat of photoelectric device chip 4, solves
Photosignal degradation, electric property that photoelectric device chip 4 is the most overheated to be caused reduce
Problem, it is ensured that photoelectric device chip 4 stability in the course of the work, improve photoelectric device chip
The performance of 4, extends the life-span of photoelectric device chip 4.
Embodiment four:
Figure 12 is the flow chart of the photoelectricity interconnect device assembly method that the embodiment of the present invention four provides, such as Figure 12
Shown in, the assembly method of a kind of photoelectricity interconnect device that the present embodiment provides, comprise the following steps:
Step S201: provide one first heat sink 5；
Step S202: photoelectric device chip 4 is fixed on the surface of first heat sink 5, and
The photodevice matrix 2 being connected to one and slide glass 1 are arranged on the surface of first heat sink 5
On；
Step S203: be fixedly installed on first heat sink 5 on substrate 7；
Step S204: photoelectric device chip 4 is fixedly installed on substrate 7, and by photoelectric device chip
4 are connected with the photoelectric device connection line on slide glass 1 by electric connection line；
Step S205: by the second heat sink 6 two ends buckle frames and be fixed on substrate 7；
Step S206: by the photodevice matrix 2 that is connected to one with slide glass 1 relative to photoelectric device
Chip 4 erects and fixes.
Different from embodiment three, the photoelectricity interconnect device method of the present embodiment also includes step S205: by second
Heat sink 6 two ends buckle frames are also fixed on substrate；Second heat sink 6 is used for cooling down and remove photodevice matrix 2
Heat.Second heat sink 6 is fixed on substrate 7 by heat-conducting glue.The surface laminating of photodevice matrix 2
And be fixed on the side of second heat sink 6.
Photoelectricity interconnect device as shown in Figure 2 is ultimately formed by above-mentioned steps.
Being coupled and aligned with photodevice matrix 2 by optical fiber 8 and fix, as shown in figure 13, optical fiber 8 is by inserting
Enter the fiber orientation through hole on slide glass 1 to realize being directed at the optical coupled of photodevice matrix 2.
The embodiment of the present invention four provide photoelectricity interconnect device assembly method on the basis of embodiment three by second
Heat sink 6 are fixed on substrate 7, for cooling down and remove the heat of photodevice matrix 2, solve photoelectricity
Device array 2 is the most overheated and causes wavelength instability, launch power generation change, Yi Jiguang
The most overheated problem causing photosignal degradation, electric property to reduce of electrical part chip 4,
First heat sink 5 and second heat 6 is heavy ensure that photodevice matrix 2 and photoelectric device chip 4 are in work process
In stability, improve photodevice matrix 2 and photoelectric device chip 4 and whole photoelectricity interconnect device
Performance, extend the life-span of whole photoelectricity interconnect device.
Above are only presently preferred embodiments of the present invention and the know-why used.The invention is not restricted to institute here
The specific embodiment stated, the various significant changes that can carry out for a person skilled in the art, readjusts
And substitute all without departing from protection scope of the present invention.Therefore, although by above example, the present invention is entered
Go and be described in further detail, but the present invention has been not limited only to above example, without departing from structure of the present invention
In the case of think of, it is also possible to include other Equivalent embodiments more, and the scope of the present invention is by claim
Scope determines.
Claims (10)
1. a photoelectricity interconnect device, it is characterised in that including:
Slide glass；
Photodevice matrix, is fixed on the surface of described slide glass, and described slide glass is provided with described phototube
The photoelectric device connection line of part array；
Substrate；
Photoelectric device chip, fixes on the substrate, and described photoelectric device chip passes through electric connection line and institute
State the photoelectric device connection line on slide glass to connect；And
Second is heat sink, or first is heat sink and second heat sink, described first heat sink fixing on the substrate,
For cooling down described photoelectric device chip, described second heat sink fixing on the substrate, be used for cooling down described
Photodevice matrix, wherein, described photoelectric device chip is fixed on described first heat sink surface, described
Photoelectric device chip is connected with the photoelectric device connection line on described slide glass by bonding wire, and by described weldering
The plastic deformation of line makes described slide glass erect relative to described photoelectric device chip together with photodevice matrix
And fix, described second heat sink is provided with U-shaped groove, and the length of described U-shaped groove is more than photoelectric device core
The length of sheet, described second heat sink two ends buckle frame is also fixed on the substrate, described photodevice matrix
Surface posts and fixes on described second heat sink side.
Photoelectricity interconnect device the most according to claim 1, it is characterised in that described photoelectric device chip
It is fixed on described first heat sink surface and is fixed by heat-conducting glue, the surface laminating of described photodevice matrix
And be fixed on described second heat sink side and fixed by heat-conducting glue.
Photoelectricity interconnect device the most according to claim 1, it is characterised in that described U-shaped groove recessed
Groove depth span is 200um～400um.
Photoelectricity interconnect device the most according to claim 1, it is characterised in that in described U-shaped groove
Portion is provided with bulge-structure.
5. according to the arbitrary described photoelectricity interconnect device of claim 1-4, it is characterised in that described first
Heat sink and the second heat sink material is copper, aluminum or its alloy.
6. according to the arbitrary described photoelectricity interconnect device of claim 1-4, it is characterised in that described phototube
Part array includes that at least one photoelectric device being fixed on described slide surface, described photoelectric device are laser
Device and/or photodetector.
7. according to the arbitrary described photoelectricity interconnect device of claim 1-4, it is characterised in that described phototube
Part chip is laser driving chip or photo detector signal amplification chip.
8. a photoelectricity interconnect device assembly method, it is characterised in that comprise the following steps:
There is provided one first heat sink；
Photoelectric device chip is fixed on described first heat sink surface, and by the fixing light being connected as a single entity
Electrical part array and slide glass are arranged on described first heat sink surface；
Heat sink it is fixed on described first on substrate；
Described photoelectric device chip is fixed on the substrate, and by described photoelectric device chip by electricity
Connecting line is connected with the photoelectric device connection line on described slide glass；
By the second heat sink two ends buckle frame and fixing described second heat sink is provided with U-shaped groove on the substrate,
The length of described U-shaped groove is more than the length of described photoelectric device chip, the surface of described photodevice matrix
Post and fix on described second heat sink side；
By the described photodevice matrix that is connected to one with described slide glass relative to described photoelectric device core
Sheet erects and fixes.
Photoelectricity interconnect device assembly method the most according to claim 8, it is characterised in that described photoelectricity
Device chip is connected with the photoelectric device connection line on described slide glass by bonding wire, and by described bonding wire
Plastic deformation makes described slide glass erect together with photodevice matrix relative to described photoelectric device chip and consolidate
Fixed.
Photoelectricity interconnect device assembly method the most according to claim 8, it is characterised in that described light
Electrical part chip is fixedly connected on described substrate by bonding wire.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410487544.5A CN104216077B (en) | 2014-09-22 | A kind of photoelectricity interconnect device and assembly method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410487544.5A CN104216077B (en) | 2014-09-22 | A kind of photoelectricity interconnect device and assembly method thereof |
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| CN104216077A CN104216077A (en) | 2014-12-17 |
| CN104216077B true CN104216077B (en) | 2017-01-04 |
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| US6583902B1 (en) * | 1999-12-09 | 2003-06-24 | Alvesta, Inc. | Modular fiber-optic transceiver |
| CN103513348A (en) * | 2013-09-23 | 2014-01-15 | 武汉光迅科技股份有限公司 | Optical waveguide chip and pd array lens coupling device |
| CN103837947A (en) * | 2012-11-26 | 2014-06-04 | 安华高科技通用Ip(新加坡)公司 | Methods and systems for dissipating heat in optical communications modules |
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| JP2546146B2 (en) * | 1993-06-24 | 1996-10-23 | 日本電気株式会社 | Semiconductor laser device |
| US6583902B1 (en) * | 1999-12-09 | 2003-06-24 | Alvesta, Inc. | Modular fiber-optic transceiver |
| CN103837947A (en) * | 2012-11-26 | 2014-06-04 | 安华高科技通用Ip(新加坡)公司 | Methods and systems for dissipating heat in optical communications modules |
| CN103513348A (en) * | 2013-09-23 | 2014-01-15 | 武汉光迅科技股份有限公司 | Optical waveguide chip and pd array lens coupling device |
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