CN104167343A - Plasma processing apparatus and radio frequency shielding apparatus thereof - Google Patents
Plasma processing apparatus and radio frequency shielding apparatus thereof Download PDFInfo
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- CN104167343A CN104167343A CN201310183046.7A CN201310183046A CN104167343A CN 104167343 A CN104167343 A CN 104167343A CN 201310183046 A CN201310183046 A CN 201310183046A CN 104167343 A CN104167343 A CN 104167343A
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- frequency shielding
- inner casing
- shielding fence
- processing apparatus
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Abstract
The invention provides a plasma processing apparatus and a radio frequency shielding apparatus thereof, wherein the plasma processing apparatus comprises a base station for placing a substrate, and the radio frequency shielding apparatus is arranged below the base station. The invention is characterized in that, the radio frequency shielding apparatus comprises a barrel inner casing and an outer casing, and the inner casing is arranged in the outer casing; at least a shielding plate, arranged in the inner casing, used for isolating several leads accommodated in the inner casing. The inner casing is made of conductive materials, and radio frequency power source energy is connected to the plasma processing apparatus through the inner casing. According to the invention, mutual crosstalk of modules such as a temperature control lead and a direct current lead in the radio frequency shielding apparatus can be prevented.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of plasma processing apparatus and radio-frequency shielding fence thereof.
Background technology
Plasma processing apparatus utilizes the operation principle of vacuum reaction chamber to carry out the processing of the substrate of semiconductor chip and plasma flat-plate.The operation principle of vacuum reaction chamber is in vacuum reaction chamber, to pass into the reacting gas that contains suitable etching agent source gas, and then this vacuum reaction chamber is carried out to radio-frequency (RF) energy input, with activated reactive gas, excite and maintain plasma, so that respectively the material layer on etching substrate surface or on substrate surface depositing layer of material, and then semiconductor chip and plasma flat-plate are processed.
In the chamber of plasma processing apparatus, be strict vacuum environment, and radio-frequency (RF) energy is to be coupled into reaction chamber from the below of plasma processing apparatus.Plasma processing apparatus below also has required other assemblies such as wire electric wire of other processing procedures.Wherein, according to the skin effect of radio-frequency (RF) energy, radio-frequency (RF) energy also forms Electric Field Distribution below plasma processing apparatus again, therefore can be affected to the electrology characteristic of these wire electric wires, such as produce not should induced current etc., therefore affect the normal work of specific components, thereby brought very big impact finally to the processing procedure of substrate.
Summary of the invention
For the problems referred to above in background technology, the present invention proposes a kind of plasma processing apparatus and radio-frequency shielding fence thereof.
First aspect present invention provides a kind of radio-frequency shielding fence for plasma processing apparatus, wherein, described plasma processing apparatus comprises the base station of a placement substrate, and described radio-frequency shielding fence is arranged at described base station below, it is characterized in that, described radio-frequency shielding fence comprises:
The inner casing of tubbiness and shell, described inner casing is positioned among shell;
At least one barricade, it is arranged among described inner casing, in order to isolation, is contained in the some wires in described inner casing, and wherein, described inner casing is that electric conducting material is made, and radio frequency power source energy is connected to described plasma processing apparatus by described inner casing.
Further, described wire comprises temperature pilot or DC power supply wire.
Further, described temperature pilot is connected to the heater in described base station, in order to control the temperature of described heater.
Further, described temperature pilot is connected to the DC electrode in the electrostatic chuck in described base station, in order to provide DC power supply energy so that the substrate being positioned on described base station is produced to electrostatic attraction to DC electrode.
Further, the material of described inner casing is copper.
Further, the material of described shell is aluminium.
Further, described shell is connected to and holds or zero potential end.
Further, described radio-frequency shielding fence is connected with the base station of chamber by three connectors.
Further, described inner casing and shell are the cylindric of hollow or square tube shape.
Further, the span of the distance of described inner casing and shell is 10mm～20mm.
Second aspect present invention provides a kind of plasma processing apparatus, and wherein, described plasma processing apparatus comprises the radio-frequency shielding fence that first aspect present invention provides.
The present invention can avoid mutually crosstalking of the assembly such as temperature pilot and DC power supply wire in radio-frequency shielding fence.
Accompanying drawing explanation
Fig. 1 is according to the structural representation of the radio-frequency shielding fence for plasma processing apparatus of a specific embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described.
Fig. 1 is according to the structural representation of the radio-frequency shielding fence for plasma processing apparatus of a specific embodiment of the present invention.
As shown in Figure 1, first the 26S Proteasome Structure and Function of plasma treatment chamber 100 is described.Plasma process chamber 100 has a process chambers, and process chambers is essentially cylindricality, and process chambers sidewall perpendicular, has the top electrode and the bottom electrode that are arranged in parallel in process chambers.Conventionally, the region between top electrode and bottom electrode is processing region P, this region P by formation high-frequency energy to light and to maintain plasma.Above electrostatic chuck in base station 102, place substrate W to be processed, this substrate W can be the glass plate of waiting to want the semiconductor chip of etching or processing or treating to be processed into flat-panel monitor.Wherein, described electrostatic chuck is for clamping substrate W.Reacting gas is input in process chambers from gas source, one or more radio-frequency power supplies can be applied to individually on bottom electrode or be applied to respectively on top electrode and bottom electrode simultaneously, in order to radio-frequency power is transported on bottom electrode or top electrode and bottom electrode on, thereby produce large electric field process chambers is inner.Most of electric field lines are comprised in the processing region P between top electrode and bottom electrode, and this electric field accelerates being present on a small quantity the electronics of process chambers inside, makes it the gas molecule collision with the reacting gas of inputting.These collisions cause the ionization of reacting gas and exciting of plasma, thereby produce plasma in process chambers.The neutral gas molecule of reacting gas has lost electronics when standing these highfields, leaves the ion of positively charged.The ion of positively charged accelerates towards bottom electrode direction, is combined with the neutral substance in processed substrate, excites substrate processing, i.e. etching, deposit etc.Certain suitable position in plasma process chamber 100 is provided with exhaust gas region, and exhaust gas region for example, is connected with external exhaust apparatus (vacuum pump pump), in order to extract the reacting gas of using and bi-product gas out chamber in processing procedure.Wherein, plasma confinement ring is used for plasma confinement in processing region P.
Wherein, as shown in Figure 1, described radio-frequency shielding fence 200 is arranged at described base station 102 belows.Particularly, described radio-frequency shielding fence 200 comprises inner casing 202 and the shell 204 of tubbiness, and described inner casing 202 is positioned among shell 204, and not contact between the two.Described radio-frequency shielding fence 200 also comprises at least one barricade 212, and it is arranged among described inner casing 202, and inner casing 202 is divided into at least two independently spaces, and described barricade 212 can be isolated the some wires that are contained in described inner casing 202.Wherein, described inner casing 202 is that electric conducting material is made, and radio frequency power source energy is connected to described plasma processing apparatus 100 by described inner casing 202.
Alternatively, in the present embodiment, described wire comprises temperature pilot 208 or DC power supply wire 210.As shown in Figure 1, temperature pilot 208 and DC power supply wire 210 lay respectively at that described barricade 212 keeps apart two space independently.Due to the effect that barricade 212 has electricity to isolate, it has separated temperature pilot 208 and DC power supply wire 210, so both can not influence each other.Even if DC power supply wire 210 has produced induced current, temperature pilot 208 can not be subject to any interference yet, that is to say, temperature pilot 208 and DC power supply wire 210 can not crosstalked mutually.
Further, described temperature pilot 208 is connected to the heater in described base station 102, in order to control the temperature of described heater.
Further, described temperature pilot 208 is connected to the DC electrode in the electrostatic chuck in described base station 102, in order to provide DC power supply energy so that the substrate being positioned on described base station 102 is produced to electrostatic attraction to DC electrode.
Further, the material of described inner casing is copper.
Further, the material of described shell is aluminium.
Further, described shell is connected to and holds or zero potential end.
Further, described radio-frequency shielding fence 200 is connected with the base station 102 of chamber by three connectors 206.
Typically, described inner casing 202 and shell 204 are the cylindric of hollow or square tube shape.
Further, the span of the distance of described inner casing 202 and shell 204 is 10mm～20mm.
Second aspect present invention also provides a kind of plasma processing apparatus 100, and wherein, described plasma processing apparatus 100 comprises previously described radio-frequency shielding fence 200.
Although content of the present invention has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.Those skilled in the art, read after foregoing, for multiple modification of the present invention with to substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (11)
1. for a radio-frequency shielding fence for plasma processing apparatus, wherein, described plasma processing apparatus comprises the base station of a placement substrate, and described radio-frequency shielding fence is arranged at described base station below, it is characterized in that, described radio-frequency shielding fence comprises:
The inner casing of tubbiness and shell, described inner casing is positioned among shell;
At least one barricade, it is arranged among described inner casing, in order to isolation, is contained in the some wires in described inner casing, and wherein, described inner casing is that electric conducting material is made, and radio frequency power source energy is connected to described plasma processing apparatus by described inner casing.
2. radio-frequency shielding fence according to claim 1, is characterized in that, described wire comprises temperature pilot or DC power supply wire.
3. radio-frequency shielding fence according to claim 2, is characterized in that, described temperature pilot is connected to the heater in described base station, in order to control the temperature of described heater.
4. radio-frequency shielding fence according to claim 2, it is characterized in that, described temperature pilot is connected to the DC electrode in the electrostatic chuck in described base station, in order to provide DC power supply energy so that the substrate being positioned on described base station is produced to electrostatic attraction to DC electrode.
5. radio-frequency shielding fence according to claim 1, is characterized in that, the material of described inner casing is copper.
6. radio-frequency shielding fence according to claim 1, is characterized in that, the material of described shell is aluminium.
7. radio-frequency shielding fence according to claim 1, is characterized in that, described shell is connected to be held or zero potential end.
8. radio-frequency shielding fence according to claim 1, is characterized in that, described radio-frequency shielding fence is connected with the base station of chamber by three connectors.
9. radio-frequency shielding fence according to claim 1, is characterized in that, described inner casing and shell are the cylindric of hollow or square tube shape.
10. radio-frequency shielding fence according to claim 1, is characterized in that, the span of the distance of described inner casing and shell is 10mm～20mm.
11. 1 kinds of plasma processing apparatus, is characterized in that, described plasma processing apparatus comprises the radio-frequency shielding fence described in claim 1 to 9 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310183046.7A CN104167343B (en) | 2013-05-17 | 2013-05-17 | Plasma processing apparatus and radio-frequency shielding fence thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310183046.7A CN104167343B (en) | 2013-05-17 | 2013-05-17 | Plasma processing apparatus and radio-frequency shielding fence thereof |
Publications (2)
| Publication Number | Publication Date |
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| CN104167343A true CN104167343A (en) | 2014-11-26 |
| CN104167343B CN104167343B (en) | 2016-07-13 |
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| CN201310183046.7A Active CN104167343B (en) | 2013-05-17 | 2013-05-17 | Plasma processing apparatus and radio-frequency shielding fence thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107093545A (en) * | 2017-06-19 | 2017-08-25 | 北京北方华创微电子装备有限公司 | The bottom electrode mechanism and reaction chamber of reaction chamber |
| CN109831882A (en) * | 2019-02-28 | 2019-05-31 | 佛山星乔电子科技有限公司 | A kind of transparent LCD display module and its control method applied to large glass wall |
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| US6020570A (en) * | 1997-02-03 | 2000-02-01 | Mitsubishi Denki Kabushiki Kaisha | Plasma processing apparatus |
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| CN107093545A (en) * | 2017-06-19 | 2017-08-25 | 北京北方华创微电子装备有限公司 | The bottom electrode mechanism and reaction chamber of reaction chamber |
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| US11410833B2 (en) | 2017-06-19 | 2022-08-09 | Beijing Naura Microelectronics Equipment Co., Ltd. | Lower electrode mechanism and reaction chamber |
| CN109831882A (en) * | 2019-02-28 | 2019-05-31 | 佛山星乔电子科技有限公司 | A kind of transparent LCD display module and its control method applied to large glass wall |
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| Publication number | Publication date |
|---|---|
| CN104167343B (en) | 2016-07-13 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |