CN104037307A - Led Lamp With Quantum Dots Layer - Google Patents

Led Lamp With Quantum Dots Layer Download PDF

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Publication number
CN104037307A
CN104037307A CN201410070789.8A CN201410070789A CN104037307A CN 104037307 A CN104037307 A CN 104037307A CN 201410070789 A CN201410070789 A CN 201410070789A CN 104037307 A CN104037307 A CN 104037307A
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China
Prior art keywords
phosphor
quantum dot
layer
illuminating device
light
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Granted
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CN201410070789.8A
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CN104037307B (en
Inventor
H.罗
S.张
Y.张
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Osram Sylvania Inc
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Osram Sylvania Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V15/00—Protecting lighting devices from damage
    • F21V15/01—Housings, e.g. material or assembling of housing parts
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/08—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters for producing coloured light, e.g. monochromatic; for reducing intensity of light
    • F21V9/12—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters for producing coloured light, e.g. monochromatic; for reducing intensity of light with liquid-filled chambers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2101/00—Point-like light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials

Abstract

A lighting device 100 includes a light source 101, a first phosphor layer 102 disposed directly or indirectly on top of the light source 101, a first quantum dots layer 103 disposed directly on top of the first phosphor layer 101, and a second phosphor layer 104 disposed directly on top of the first quantum dots layer 103. The first quantum dots layer 103 includes a population of quantum dots 106 dispersed in a first matrix material 107. Each of the first and second phosphor layers 102, 104 includes a population of conventional phosphor particles 105. Another embodiment relates to a lighting device 400 that includes a light source 401 and a wavelength-shifting phosphor layer 402 disposed on top of the light source 401. The wavelength-shifting phosphor layer 402 includes a population of quantum dots 404 and a population of phosphor particles 403 both dispersed in a matrix material 405.

Description

There is the LED lamp of quantum dot layer
The cross reference of related application
Unavailable.
Technical field
The conventional phosphor of light and the light-emitting diode of quantum dot (" the LED ") lamp of different wave length will be converted from the light of light source transmitting to containing being useful on.
Background technology
Existing LED can launch the light in ultraviolet (" UV "), visible or infrared (" IR ") wave-length coverage.These LED have narrow emission spectrum conventionally.It is desirable to use the LED that can produce wider emission spectrum to produce needed color of light, as white light.Because emission spectrum is narrow, so LED can not be directly used in generation broad-spectrum light.Can introduce the light that phosphor converts a part for the light by LED original transmitted to different wave length.Present and more preferably export light through the combination of the light of conversion and the light of original transmitted.But phosphor conventionally has narrow absorption spectrum and only can use under the potential light source with very specific emission wavelength ranges.For example, YAG:Ce phosphor is used for light the best of 460 nanometers (" nm ") but is not suitable for the LED luminous at other wavelength.Generally there is low color rendering index (" CRI ") by the white light of the phosphor converted of a type, and only can reach limited reference color temperature.
Quantum dot (" QD ", also referred to as semiconductor nanocrystal) can be used to light and the light of generation as seen or in region of ultra-red that conversion is launched by LED.Quantum dot is the small crystals of II-VI, III-V, IV-VI family material, generally has the diameter of 1nm-20nm, and described diameter is less than body (bulk) exciton Bohr radius.Due to quantum limitation effect, the energy difference between the electronic state of QD is the two function of the composition of QD and physical size.Therefore, can come optics and optoelectronics performance tuning and adjustment QD by changing the physical size of QD.QD absorptance absorbs and starts the short wavelength of wavelength, and is absorbing beginning wavelength place utilizing emitted light.The bandwidth of QD luminescent spectrum is relevant with the distribution of sizes of Doppler broadening, Heisenberg's uncertainty principle and QD that depends on temperature.For given QD, can be by the varying sized emission band of controlling this QD.Therefore, QD can produce and utilize the unapproachable color gamut of conventional phosphor.For example, 2nm CdSe quantum dot is launched in blue region, and 10nm CdSe quantum dot is launched in red area.
Due to the nano-grade size of QD, so QD conversion layer is non-scattering layer in essence.In the situation that there is no scattering, light has the light path of much shorter during by QD layer during by conventional phosphor layer than identical light.Must be out of favour unless the thickness of this layer is high, just not have enough light to be absorbed the transmitting that converts desirable amount with the wavelength place other to by QD.Therefore, undesirable needs thick QD layer or high QD are measured with realize target color combination.In addition, optical path length is different at different emission angles.For QD layer, light is transformed into red area, there is shorter light path and produce less ruddiness at the light of less emission angle, and causing more ruddiness at the photoconduction of larger emission angle.Therefore, the output Guang center of gained has less red component and has more red component at edge, and this is disadvantageous in color homogeneity.
It is known below: US patent 6,890,777 (Bawendi); US patent publication No. 2008/0173886 (Cheon), 2007/0246734 (Lee), 2010/0123155 (Pickett) and 2007/0221947 (Locascio); And article " Optical thin-film materials with low refractive index for broadband elimination of Fresnel reflection ", Xi etc., Nature Photonics, the 1st volume, 176-179 page (online publishing on March 1st, 2007).
Summary of the invention
The object of the present embodiment is to provide a kind of illuminating device, and it had not only had conventional phosphor and quantum dot but also had had controls and reaches the required color of output light and the reliable fashion of homogeneity.
According to an aspect of the present invention, provide for radiative illuminating device 100.Comprise light source 101, be arranged on the first conventional phosphor layer 102 above of described light source 101 directly or indirectly, be set directly at the first quantum dot layer 103 above of described the first phosphor layer 101 and be set directly at described the first quantum dot layer 103 the second conventional phosphor layer 104 above for radiative illuminating device 100.Described the first quantum dot layer 103 comprises at least one cohort (population) that is dispersed in the quantum dot 106 in the first host material 107.The first and second conventional phosphor layers 102,104 comprise at least one cohort of conventional phosphor particles 105 separately.
According to a further aspect in the invention, provide a kind of illuminating device 100, wherein the average diameter of conventional phosphor particles 105 be at least 20 times to the average diameter of quantum dot 106.
According to a further aspect in the invention, provide a kind of illuminating device 100, wherein the average diameter of conventional phosphor particles 105 is 1 micron-100 microns.
According to a further aspect in the invention, provide a kind of illuminating device 100, wherein quantum dot 106 comprises material C dS, CdSe, CdTe, CdPo, ZnS, ZnSe, ZnTe, ZnPo, HgS, HgSe, HgTe, MgS, MgSe, MgTe, PbSe, PbS, PbTe, GaN, GaP, GaAs, InP, InAs, CuInS 2, CdS 1-xse x, BaTiO 3, PbZrO 3, PbZr xti 1-xo 3, Ba xsr 1-xtiO 3, SrTiO 3, LaMnO 3, CaMnO 3or La 1-xca xmnO 3in one or more.
According to a further aspect in the invention, provide a kind of illuminating device 100, wherein said light source 101 comprises light-emitting diode (" LED "), laser diode, Organic Light Emitting Diode or discharge lamp.
According to a further aspect in the invention, provide a kind of illuminating device 100, wherein said light-emitting diode 101 is blue LED or UV light-emitting diode.
According to a further aspect in the invention, provide a kind of illuminating device 100, wherein said the first host material 107 comprises polymethyl methacrylate, polymer, condensation cured silicone, silicone, quartz glass, silica gel or glass.
According to a further aspect in the invention, a kind of illuminating device 100 is provided, wherein said the first and second conventional phosphor layers 102,104 comprise the conventional phosphor particles 105 that contains YAG:Ce, and described the first quantum dot layer 103 comprises the quantum dot 106 with red fluorescence spectrum.
According to a further aspect in the invention, a kind of illuminating device 100 is provided, wherein said the first conventional phosphor layer 102 contains garnet-base phosphor, silicate-based phosphors, orthosilicate based phosphor, sulfo-gallate based phosphor, sulfide based phosphor or nitride based phosphor, and described the second conventional phosphor layer 104 contains garnet-base phosphor, silicate-based phosphors, orthosilicate based phosphor, sulfo-gallate based phosphor, sulfide based phosphor or nitride based phosphor.
According to a further aspect in the invention, provide a kind of illuminating device 100, wherein said the first conventional phosphor layer 102, described the second conventional phosphor layer 104 and described the first quantum dot layer 103 contain scattering object 108.
According to a further aspect in the invention, provide a kind of illuminating device 100, the average-size of wherein said scattering object 108 is 1 micron-100 microns.Described scattering object 108 preferably includes TiO 2or glass.
According to a further aspect in the invention, provide a kind of illuminating device 200.Described illuminating device 200 further comprises the second quantum dot layer 205 being set directly at above described the second conventional phosphor layer 204.Described the second quantum dot layer 205 comprises at least one cohort that is dispersed in the quantum dot 208 in the second host material 207.Described the 3rd conventional phosphor layer 206 is set directly at above described the second quantum dot layer 205.
According to a further aspect in the invention, provide a kind of for radiative illuminating device 400.Comprise light source 401 and be directly or indirectly arranged on described light source 401 wavelength shift phosphor layer 402 above for radiative illuminating device 400.At least one cohort that described wavelength shift phosphor layer 402 comprises the quantum dot 404 being dispersed in host material 405, and be dispersed at least one cohort of the conventional phosphor particles 403 in host material 405.The average diameter of described conventional phosphor particles 403 be at least 20 times to the average diameter of quantum dot 404.
According to a further aspect in the invention, provide a kind of illuminating device 400, wherein the average diameter of conventional phosphor particles 403 is 1 micron-100 microns.
According to a further aspect in the invention, provide a kind of illuminating device 400, wherein quantum dot 404 comprises material C dS, CdSe, CdTe, CdPo, ZnS, ZnSe, ZnTe, ZnPo, HgS, HgSe, HgTe, MgS, MgSe, MgTe, PbSe, PbS, PbTe, GaN, GaP, GaAs, InP, InAs, CuInS 2, CdS 1-xse x, BaTiO 3, PbZrO 3, PbZr xti 1-xo 3, Ba xsr 1-xtiO 3, SrTiO 3, LaMnO 3, CaMnO 3or La 1-xca xmnO 3in one or more.
According to a further aspect in the invention, provide a kind of illuminating device 400, wherein said light source 401 comprises light-emitting diode, laser diode, Organic Light Emitting Diode or discharge lamp.
According to a further aspect in the invention, provide a kind of illuminating device 400, wherein said light-emitting diode 401 is blue LEDs.
According to a further aspect in the invention, provide a kind of illuminating device 400, wherein said host material 405 comprises polymethyl methacrylate, polymer, condensation cured silicone, silicone, quartz glass, silica gel or glass.
According to a further aspect in the invention, provide a kind of illuminating device 400, wherein said conventional phosphor particles 4.3 comprises YAG:Ce, and described quantum dot 404 has red fluorescence spectrum.
According to a further aspect in the invention, a kind of illuminating device 400 is provided, and wherein said conventional phosphor particles 403 comprises garnet-base phosphor, silicate-based phosphors, orthosilicate based phosphor, sulfo-gallate based phosphor, sulfide based phosphor or nitride based phosphor.
According to a further aspect in the invention, provide a kind of illuminating device 400, wherein said wavelength shift phosphor layer 402 comprises scattering object 408.
According to a further aspect in the invention, provide a kind of illuminating device 400, the average-size of wherein said scattering object 408 is 1 micron-100 microns.Described scattering object 408 comprises TiO 2or glass.
Brief description of the drawings
With reference to should be combined with accompanying drawing below read below detailed description, wherein identical mark represents identical part.
Fig. 1 is according to the schematic diagram of the illuminating device of the first embodiment of the present invention.
Fig. 2 is according to the schematic diagram of the illuminating device of another embodiment of the present invention.
Fig. 3 is according to the schematic diagram of the illuminating device of another embodiment of the present invention.
Fig. 4 is according to the schematic diagram of the illuminating device of another embodiment of the present invention.
Embodiment
In order to understand better embodiment of the present invention and other and other object, their advantage and ability, with reference to disclosure and appending claims below being combined with above-mentioned accompanying drawing.
Although shown and described and thought at present the preferred embodiments of the invention, having it will be apparent to those skilled in the art that and can carry out different variations and amendment herein and not deviate from the scope being specified by appending claims.
With reference to figure 1, show the illuminating device 100 according to the first embodiment, as lamp.Described illuminating device 100 comprises light source, and light source can be LED, laser diode, organic LED or discharge lamp, preferably one or more LED.Lamp 100 comprises the driving soft copy (not shown) that can be connected with power supply from suitable voltage to LED101 that supply, as known in the state of the art.Described illuminating device 100 produces the output light of wide spectrum, as has the white light of high color rendering index (" CRI ").Wide spectrum output light has basic color and intensity uniformly.By the part in the primary light being generated by light source being converted to and has more long wavelength's light and produce Broadband emission light with quantum dot and conventional phosphor.Only use the wavelength deficiency that conventional phosphor can exist to be compensated by use quantum dot.Therefore, produce the wide spectrum output light with higher CRI.
As shown in Figure 1, described light source is blue led chip 101, preferably GaInN LED chip, and it launches the light of the wavelength of about 430nm-485nm.The first conventional phosphor layer 102 is directly on LED chip 101.Term " directly " means that conventional phosphor layer 102 directly contacts with the surface of blue led chip 101.Described the first conventional phosphor layer 102 contains cold white phosphor particles 105 as Y 3al 5o 12: Ce 3+a part for the blue light of being launched by LED chip 101 is converted to the yellow region of the wide emission spectrum with 450nm-750nm.Term " cold white phosphor " mean the blue light launched by described blue led chip 101 and by the gold-tinted of described cold white phosphor converted in conjunction with forming there is the correlated colour temperature higher than the 4500K output white light of (" CCT ").Phosphor particles 105 is mixed into polymeric base material and forms the sheet material of desired thickness (for example, tens microns to hundreds of micron) by silk screen printing as silicone or PMMA neutralization.The first quantum dot layer 103 is on described the first conventional phosphor layer 102.Described the first quantum dot layer 103 contains quantum dot 106, and the red fluorescence spectrum that it has between 550nm-750nm, is dispersed in host material 107.Weigh up dry CdSe or the ZnS quantum dot 106 of amount of calculation, then under confined chamber intrinsic chemical fume hood, be diluted in as laboratory flask at container organic solvent as toluene in.By the uncured polymer basic material 109 of amount of calculation, add in flask and fully mix until described base polymer solves homogeneously in solvent such as, but not limited to condensation cured silicone or polymethyl methacrylate (PMMA).Apply by spin coating, printing-drawing or scoop and be coated on this above-mentioned first conventional phosphor layer 102 through the solution mixing described.According to this polymer cure conditional request, under the temperature of room temperature, rising or UV illuminate condition, this quantum dot coating is dry, form described the first quantum dot layer 103.Use adhesive as silicone the second conventional phosphor layer 104 of manufacturing is as mentioned above bonded in as described in the first quantum dot 103 above to form the hierarchy that contains layer 102,103 and 104.Then, this hierarchy is cut into need geometry and with adhesive as silicone by its be directly bonded in blue led chip 101 above.Described the second conventional phosphor layer 104 can contain with cold white phosphor 105 identical in the first conventional phosphor layer 102 to convert a part for the blue light of being launched by this blue led chip 101 to yellow area.
The average diameter of described conventional phosphor particles 105 can be 20 or more be multiple times than the average diameter of this quantum dot.Conventional phosphor particles 105 in conventional phosphor layer 102,104 is wide enough so that be there is no significant energy loss through the light of this layer by phosphor particles 105 scatterings of described routine.Preferably, the average diameter of described conventional phosphor particles 105 is 1 micron-100 microns, and this is common distribution of sizes for the available conventional LED phosphor particles of commodity.
Due to the multiple isotropic scatterning process of light in the first and second conventional phosphor layers 102,104, so light comes and goes also therefore Multiple through then out quantum dot layer 103 between two conventional phosphor layers 102,104.This phenomenon has increased light absorption and the conversion of quantum dot layer 103, allows for and realizes the thinner quantum dot layer of desirable color needs or quantum dot particle still less.In addition, due to the multiple scattering activity between two conventional phosphor layers 102,104, so the light path of described light scattering and angle random and do not rely on and enter the incidence angle of this layer or the angle by this layer of transmitting.Scattering activity in the second conventional phosphor layer 104 on the first quantum dot layer 103 is the further average probability of emission angle, and irrelevant with the direction of light from the first quantum dot layer 103.Therefore for the light ray (that is: photon) in the transmitting of a certain angle of departure, in each layer, mean optical pathlength degree and the average probability that therefore will be changed by conventional phosphor and quantum dot do not rely on the angle of departure.Do not rely on the angle of departure at certain emission angle by the percentage of the output light of conventional phosphor and quantum dot conversion.Produce like this output light with more uniform distribution of color.Therefore, inhomogeneous distribution of color problem significantly reduces or is almost eliminated.
Optionally, this routine phosphor layer and quantum dot layer 102,103,104 can further contain optical scattering body 108 further to strengthen scattering.Any of phosphor layer 102,104 and quantum dot layer 103 can contain scattering object 108, in these layers two-layer or more multi-layered can be like this, or whole three layers all can be like this.Described scattering object 108 can be by TiO 2particle or bead are made.The preferred average-size of described scattering object 108 can be 1 micron-100 microns.
Described conventional phosphor layer 102,104 can be with various known approach manufactures.For example, described conventional phosphor particles 105 can be mixed in plastic grain or polymeric material.Then by this mixture printing, extrude or be pressed into the film with desired thickness.Described film is cut into required shape according to application.In another case, by translucent ceramic powders, as Al 2o 3, mix with phosphor powder.Then in mould, the clinkering under high temperature and high pressure of this mixture is had to the thickness of needs and the film of geometry to form.Other in the situation that, the mother glass of the rare earth element that contains specific molar percentage is processed at very high temperature, then molding or be pressed into has the plate of the thickness needing.Other in the situation that, phosphor powder is mixed with glass powder.By this mixture thermoplastic so that composite material to be provided.Then this composite material is solidified to provide the phosphor with the thickness needing to disperse glass.
Described quantum dot layer 103 can be with various approach manufactures.Weigh up the available dry quantum dot of commodity of amount of calculation, for example, from Ocean NanoTech, Inc. CdSe or ZnS quantum dot, then under confined chamber intrinsic chemical fume hood, diluted in as laboratory flask at container into organic solvent such as, but not limited to chloroform, isopropyl alcohol or toluene in.By the uncured basic material of amount of calculation, add in flask and fully mix until described base polymer solves homogeneously in solvent such as, but not limited to condensation cured silicone or polymethyl methacrylate (PMMA).The solution of described mixing is applied and is coated in substrate by spin coating, printing-drawing or scoop, comprise conventional phosphor layer.Depend on this polymer cure conditional request, under as the temperature of room temperature, rising or UV illuminate condition, the solution of this mixing is dried.Described basic material can be also other polymer, silicone, quartz glass, silica gel or glass.
Described YAG:Ce phosphor can mix with silicone with the percentage by weight of 35-65%.The thickness of this routine phosphor layer 102,104 can be 40-75 μ m.Phosphor is more sparse, and the phosphor layer that light conversion fully needs under target CCT is thicker.Described CdSe or CdS quantum dot can mix with silicone with the percentage by weight of 10-40%.The thickness of described quantum dot layer 103 can be 50 microns to hundreds of micron.Quantum dot is more sparse, and the quantum dot layer that light conversion fully needs under target CCT is thicker.
In other embodiments, illuminating device 200 contains extra conventional phosphor layer and quantum dot layer as shown in Figure 2.For example, described illuminating device 200 contains directly the second quantum dot layer 205 on described the second conventional phosphor layer 204.Described the second quantum dot layer 205 comprises at least one cohort that is dispersed in the quantum dot 208 in the second host material 207.Described the second quantum dot layer can have and the same or analogous chemical composition of described the first quantum dot layer 203.Described illuminating device 200 contains directly the 3rd conventional phosphor layer 206 on described the second quantum dot layer 205.Described the 3rd conventional phosphor layer can have the chemical composition identical with the described first or second conventional phosphor layer 202,204.The structure of described illuminating device 200 can expand to and comprise in a similar manner extra quantum dot layer and conventional phosphor layer in the above.
In another embodiment, described light source can be nearly UV LED chip, and it is luminous at about 375-400nm wavelength place.The phosphor layer of described routine can contain blue phosphor such as, but not limited to (Sr, Ca) 5(PO 4) 3cl:Eu, BaMgAl 10o 17: Eu, (Sr, Ba) 3mgSi 2o 8: Eu, (Ba, Ca, Mg) 10(PO 4) 6cl 2: Eu, BaMgSi 4o 10: Eu 2+, and green phosphor is such as, but not limited to SrGa 2s 4: Eu, Zn 2geO 4: Mn, BaMgAl 10o 17: Eu, Mn, to convert the described UV light of being launched by UV LED chip to visible ray.Described quantum dot layer contains the quantum dot with red fluorescence spectrum.
Another embodiment is shown in Fig. 3.The first conventional phosphor layer 302 be indirectly arranged on LED chip 301 above.Term " indirectly " means that described phosphor layer does not directly contact the surface of LED chip, but in the distance needing from LED chip.Therefore, described phosphor is remote phosphors.Between the first conventional phosphor layer 302 and LED chip 301, can be polymer, resin, sealant, gas or vacuum.Preferred sealant 305 is silicone.The first quantum dot layer 303 is directly on described the first conventional phosphor layer 302.The second conventional phosphor layer 304 is directly on described quantum dot layer.Described the second conventional phosphor layer 304 can contain and identical phosphor in the first conventional phosphor layer 302.Described 302,303 and 304 the hierarchy of containing can be bonded in above sealant 305 as silicone with adhesive, or with mechanical erection device as snap ring at place separated by a distance mechanical erection above LED chip 301.Optionally, described illuminating device 300 can contain more conventional phosphor layer and quantum dot layer.
With reference to figure 4, show the illuminating device 400 according to an embodiment, as lamp.Described illuminating device 400 comprises light source, and light source can be LED, laser diode, organic LED or discharge lamp, preferably one or more LED.As shown in Figure 4, described light source is LED chip 401, preferred blue GaInN LED chip, and it is transmitted in the light at about 430nm-485nm wavelength place.
Containing the wavelength shift phosphor layer 402 of conventional phosphor particles 403 and quantum dot 404 be set directly at LED chip 401 above.Weigh up dry CdSe or the ZnS quantum dot of amount of calculation, then under confined chamber intrinsic chemical fume hood, in the flask of laboratory, be diluted to organic solvent as toluene in.By the uncured polymeric base material of amount of calculation, such as, but not limited to condensation cured silicone, polymethyl methacrylate (PMMA), add in flask and fully mix until described base polymer solves homogeneously in solvent, forming mixture #1 to.Meanwhile, the conventional phosphor powder of amount of calculation is mixed into equably with described quantum dot mixture in the polymeric base material of same type in to form mixture #2.Then mixture #2 is toppled over carefully in the flask that contains mixture #1, then stir to fully mix with mixture #1.Then, apply the solution of described mixing is coated to transparent substrate as also then dry to form the uniform layer with desired thickness under the curing temperature of needs on glass or plastics by spin coating, silk screen printing or scoop.Described sheet material is cut into the geometry that needs and can be bonded in above LED chip as silicone or PMMA by adhesive.Conventional phosphor particles 403 and quantum dot 404 are dispersed in host material 405.The average diameter of described conventional phosphor particles 403 be at least 20 times to the average diameter of quantum dot 404.Described conventional phosphor particles 403 is wide enough so that be there is no significant energy loss through the light of this layer by 403 scatterings of conventional phosphor particles.Preferably, the average diameter of described conventional phosphor particles 403 is 1 micron-100 microns.
Because light in wavelength shift phosphor layer 402 is by the multiple isotropism light scattering of conventional phosphor particles, so the light path of light scattering and angle are random.The total length of described random light path is significantly greater than the thickness of wavelength shift phosphor layer 402.This phenomenon has increased light absorption and the conversion of quantum dot, causes for realizing the thinner layer of desirable color needs or quantum dot particle still less.In addition, described multiple scattering activity makes the angle random of the light of scattering also therefore make the angle random by described layer 402 transmitting.Therefore for the light ray (that is: photon) in the transmitting of a certain emission angle, the mean optical pathlength degree in layer 402 and will do not relied on the angle of departure by the average probability of conventional phosphor and quantum dot conversion.Produce like this output light with more uniform distribution of color.Therefore, inhomogeneous distribution of color problem significantly reduces or is almost eliminated.
Optionally, described wavelength shift phosphor layer 402 can further contain optical scattering body 408 further to strengthen scattering.Described scattering object 408 can be by TiO 2particle or bead are made.The preferred average-size of described scattering object 408 can be 1 micron-100 microns.
In one embodiment, described wavelength shift phosphor layer 402 can be arranged on above LED chip indirectly.Between described wavelength shift phosphor layer and described LED chip, can be polymer, resin, sealant, gas or vacuum.Preferred sealant is silicone.
Although be made up of garnet-base phosphor for conventional phosphor preferred embodiment described herein, described embodiment can expand to other conventional phosphor as silicate-based phosphors, orthosilicate based phosphor, sulfo-gallic acid based phosphor, sulfide based phosphor or nitride based phosphor.Although preferred embodiment described herein is the method for the conventional phosphor of preparation, described embodiment can expand to other phosphor preparation method in those of ordinary skill in the art's ken.
Although make as the CdSe in PMMA or ZnS with polymer substrate for quantum dot preferred embodiment described herein, described embodiment can expand to other quantum dot with following chemical composition: Cds, CdSe, CdTe, CdPo, ZnS, ZnSe, ZnTe, ZnPo, HgS, HgSe, HgTe, MgS, MgSe, MgTe, PbSe, PbS, PbTe, GaN, GaP, GaAs, InP, InAs, CuInS 2, CdS 1-xse x, BaTiO 3, PbZrO 3, PbZr xti 1-xo 3, Ba xsr 1-xtiO 3, SrTiO 3, LaMnO 3, CaMnO 3or La 1-xca xmnO 3.That described embodiment can expand to is as synthetic in colloid by preparation method, senior epitaxy nanocrystal, Implantation, photoetching technique, virus assembly or electrochemistry are assembled the quantum dot of making.Although preferred embodiment described herein discloses the method for preparing quantum dot layer, described embodiment can expand to other quantum dot layer preparation method in those of ordinary skill in the art's ken.
The example of synthetic ZnS quantum dot is as follows.Elementary sulfur and oleyl amine are joined in phial and carry out ultrasonic processing until sulphur dissolves.Zinc oleate, oleic acid and oleyl amine are added in flask and at 200 DEG C and heated under nitrogen.Sulphur solution is injected to this solution in flask and this flask is heated 1 hour at 300 DEG C.Then this solution is cooled to 70 DEG C.In this cooling solution, add acetone and fully stir.In this solution, add methyl alcohol to separate out nanocrystal.By this mixture centrifugation and drain supernatant.This sediment is also dispersed in hexane with acetone washing again.
Although described principle of the present invention herein, it will be appreciated by those skilled in the art that this description only makes and not as the restriction to scope of the present invention in the mode of example.In claim below, can provide the Reference numeral corresponding with embodiment described herein, as the means that facilitate reference to the claimed subject example shown in figure.But, should be understood that Reference numeral is not intended to limit the scope of claim.Except the exemplary illustrating and describe, also can expect within the scope of the invention other embodiment herein.The amendment that those of ordinary skill in the art make and replacement considered to be in scope of the present invention, and except being limited by the record of following claim, scope of the present invention is unrestricted.
The nonrestrictive reference numerals list using in this specification below:
100 illuminating devices
101 light sources
102 first conventional phosphor layers
103 first quantum dot layers
104 second conventional phosphor layers
105 phosphor particles
106 quantum dots
107 host materials
108 scattering objects
200 illuminating devices
201 light sources
202 first conventional phosphor layers
203 first quantum dot layers
204 second conventional phosphor layers
205 second quantum dot layers
206 the 3rd conventional phosphor layers
207 second host materials
208 quantum dots
300 illuminating devices
301 light sources
302 first conventional phosphor layers
303 first quantum dot layers
304 second conventional phosphor layers
305 sealants
400 illuminating devices
401 light sources
402 wavelength shift phosphor layers
403 conventional phosphor particles
404 quantum dots
405 host materials
408 scattering objects

Claims (22)

1. illuminating device (100), comprises:
Light emitting source (101);
Be arranged on directly or indirectly described light source (101) the first phosphor layer (102) above;
Be set directly at described the first phosphor layer (101) the first quantum dot layer (103) above, at least one cohort that described the first quantum dot layer (103) comprises the quantum dot (106) being dispersed in the first host material (107); With
Be set directly at described the first quantum dot layer (103) the second phosphor layer (104) above, at least one cohort of described the first and second phosphor layers (102), (104) each self-contained phosphor particles (105).
2. illuminating device claimed in claim 1 (100), the average diameter of wherein said conventional phosphor particles (105) be at least 20 times to the average diameter of described quantum dot (106).
3. illuminating device claimed in claim 1 (100), the average-size of wherein said phosphor particles (105) is 1 micron-100 microns.
4. illuminating device claimed in claim 1 (100), wherein said quantum dot (106) comprises the material that at least one is selected from lower group: CdS, CdSe, CdTe, CdPo, ZnS, ZnSe, ZnTe, ZnPo, HgS, HgSe, HgTe, MgS, MgSe, MgTe, PbSe, PbS, PbTe, GaN, GaP, GaAs, InP, InAs, CuInS 2, CdS 1-xse x, BaTiO 3, PbZrO 3, PbZr xti 1-xo 3, Ba xsr 1-xtiO 3, SrTiO 3, LaMnO 3, CaMnO 3and La 1-xca xmnO 3.
5. illuminating device claimed in claim 1 (100), wherein said light source (101) comprises the device that at least one is selected from lower group: light-emitting diode, laser diode, Organic Light Emitting Diode and discharge lamp.
6. illuminating device claimed in claim 5 (100), wherein said light-emitting diode (101) is the device that is selected from blue LED and UV light-emitting diode.
7. illuminating device claimed in claim 1 (100), wherein said the first host material (107) comprises the material that at least one is selected from lower group: polymethyl methacrylate, polymer, condensation cured silicone, silicone, quartz glass, silica gel and glass.
8. illuminating device claimed in claim 1 (100), wherein said the first and second phosphor layers (102), (104) comprise the phosphor particles (105) containing YAG:Ce, and described the first quantum dot layer (103) comprises the quantum dot (106) with red fluorescence spectrum.
9. illuminating device claimed in claim 1 (100), wherein said the first phosphor layer (102) comprises the material that at least one is selected from lower group: garnet-base phosphor, silicate-based phosphors, orthosilicate based phosphor, sulfo-gallate based phosphor, sulfide based phosphor and nitride based phosphor, described the second phosphor layer (104) comprises the material that at least one is selected from lower group: garnet-base phosphor, silicate-based phosphors, orthosilicate based phosphor, sulfo-gallate based phosphor, sulfide based phosphor and nitride based phosphor.
10. illuminating device claimed in claim 1 (100), wherein said the first phosphor layer (102), the second phosphor layer (104) and described the first quantum dot layer (103) further comprise scattering object (108) separately.
11. illuminating devices claimed in claim 10 (100), the average-size of wherein said scattering object (108) is 1 micron-100 microns, and described scattering object (108) comprises at least one and is selected from TiO 2material with glass.
12. illuminating devices claimed in claim 1 (200), further comprise:
Be set directly at described the second phosphor layer (204) the second quantum dot layer (205) above, at least one cohort that described the second quantum dot layer (205) comprises the quantum dot (208) being dispersed in the second host material (207); With
Be set directly at described the second quantum dot layer (205) the 3rd phosphor layer (206) above.
13. illuminating devices (400), comprise:
Light emitting source (401); With
Be arranged on directly or indirectly described light source (401) wavelength shift phosphor layer (402) above, described wavelength shift phosphor layer (402) comprises:
Be dispersed at least one cohort of the quantum dot (404) in host material (405); With
Be dispersed at least one cohort of the phosphor particles (403) in described host material (405), the average diameter of described phosphor particles (403) be at least 20 times to the average diameter of described quantum dot (404).
Illuminating device (400) described in 14. claims 13, the average-size of wherein said phosphor particles (403) is 1 micron-100 microns.
Illuminating device (400) described in 15. claims 13, wherein said quantum dot (404) comprises the material that at least one is selected from lower group: CdS, CdSe, CdTe, CdPo, ZnS, ZnSe, ZnTe, ZnPo, HgS, HgSe, HgTe, MgS, MgSe, MgTe, PbSe, PbS, PbTe, GaN, GaP, GaAs, InP, InAs, CuInS 2, CdS 1-xse x, BaTiO 3, PbZrO 3, PbZr xti 1-xo 3, Ba xsr 1-xtiO 3, SrTiO 3, LaMnO 3, CaMnO 3and La 1-xca xmnO 3.
Illuminating device (400) described in 16. claims 13, wherein said light source (401) comprises the device that at least one is selected from lower group: light-emitting diode, laser diode, Organic Light Emitting Diode and discharge lamp.
Illuminating device (400) described in 17. claims 16, wherein said light-emitting diode (401) is blue LED.
Illuminating device (400) described in 18. claims 13, wherein said host material (405) comprises the material that at least one is selected from lower group: polymethyl methacrylate, polymer, condensation cured silicone, silicone, quartz glass, silica gel and glass.
Illuminating device (400) described in 19. claims 13, wherein said phosphor particles (403) comprises YAG:Ce, and described quantum dot (404) comprises the quantum dot with red fluorescence spectrum.
Illuminating device (400) described in 20. claims 13, wherein said phosphor particles (403) comprises the material that at least one is selected from lower group: garnet-base phosphor, silicate-based phosphors, orthosilicate based phosphor, sulfo-gallate based phosphor, sulfide based phosphor and nitride based phosphor.
Illuminating device (400) described in 21. claims 13, wherein said wavelength shift phosphor layer (402) further comprises scattering object (408).
Illuminating device (400) described in 22. claims 13, the average-size of wherein said scattering object (408) is 1 micron-100 microns, and described scattering object (408) comprises at least one and is selected from TiO 2material with glass.
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