CN103779350A - Schottky diode hydrogen sensor core and manufacturing method of core - Google Patents
Schottky diode hydrogen sensor core and manufacturing method of core Download PDFInfo
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- CN103779350A CN103779350A CN201410064220.0A CN201410064220A CN103779350A CN 103779350 A CN103779350 A CN 103779350A CN 201410064220 A CN201410064220 A CN 201410064220A CN 103779350 A CN103779350 A CN 103779350A
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Abstract
The invention discloses a schottky diode hydrogen sensor core and a manufacturing method of the core, and belongs to the field of technologies and manufacturing of sensors in order to solve the problems that an existing sensor core is low in stability and too high in cost. According to the schottky diode hydrogen sensor core, a first silicon dioxide layer and a second silicon dioxide layer are fixed to the two sides of a semiconductor layer respectively, and a cavity is formed in one side, where the second silicon dioxide layer is fixed, of the semiconductor layer; a groove is formed in the first silicon dioxide layer, and a metal sensitive film layer is fixed in the groove; a temperature measuring resistor and a heating resistor are both fixed to the surface of the first silicon dioxide layer. According to the manufacturing method of the schottky diode hydrogen sensor core, the silicon dioxide layers are formed on the semiconductor layer with mixing oxidization of a dry method and a wet method, part of silicon dioxide is removed through etching to form the groove, and then the palladium metal sensitive film layer is formed in a sputtering mode to be used for measurement of hydrogen. The schottky diode hydrogen sensor core and the manufacturing method of the core can be widely applicable to the detection field of concentration of hydrogen.
Description
Technical field
The invention belongs to sensor technology and manufacture field, relate in particular to a kind of manufacture method of hydrogen gas sensor core body.
Background technology
Hydrogen gas sensor core body is the primary clustering of hydrogen gas sensor, is mainly used to detect density of hydrogen, has important function in petrochemical industry production and field of scientific study.Conventional hydrogen gas sensor core body has MOS type, catalytic combustion-type, electrochemistry type and optical type, but the sensor core of these types is low due to stability and the problem of high cost, has therefore limited use.
Summary of the invention
The present invention is the problem in order to solve the low and high cost of existing sensor core stability, and the manufacture method of a kind of Schottky diode hydrogen gas sensor core body and this core body is now provided.
A kind of Schottky diode hydrogen gas sensor core body, it comprises: temperature detecting resistance, the responsive thin layer of metal, heating resistor, semiconductor layer, the first silicon dioxide layer and the second silicon dioxide layer;
Described the first silicon dioxide layer and the second silicon dioxide layer are separately fixed at the both sides of semiconductor layer, and the second silicon dioxide layer Yi Ce center that is fixed with on described semiconductor layer has cavity;
On the first silicon dioxide layer, have groove, described groove is concave shape, and the responsive shape of thin layer of described metal and the shape of groove are identical, and the responsive thin layer of this metal is mounted in groove;
Temperature detecting resistance and heating resistor are all fixed on the surface of the first silicon dioxide layer, and are positioned at the both sides of the responsive thin layer of metal; Wherein temperature detecting resistance is positioned at the notched side of the responsive thin layer of metal, and this temperature detecting resistance is several fonts, and the bossing of these a few font temperature detecting resistances embeds in the recess of the responsive thin layer of metal.
A manufacture method for Schottky diode hydrogen gas sensor core body, the method comprises the following steps:
Step 1: semiconductor layer is utilized to the oxidation of dry method wet-mixed, form respectively the first silicon dioxide layer and the second silicon dioxide layer in the upper and lower surface of semiconductor layer;
Step 2: the first silicon dioxide layer that utilizes lithography corrosion technology to obtain in step 1 etches groove, utilize lithography corrosion technology to be covered with the second silicon dioxide layer Yi Ce center at semiconductor layer and etch cavity, on the first silicon dioxide layer, sputter forms temperature detecting resistance and heating resistor;
Step 3: in the groove obtaining in step 2, sputter forms the responsive thin layer of metal; Obtain Schottky diode hydrogen gas sensor core body.
The manufacture method of a kind of Schottky diode hydrogen gas sensor core body of the present invention and this core body, between palladium and silicon, form the Schottky barrier of metal semiconductor, utilize hydrogen to be diffused into metal semiconductor interface and cause diode I-V curves shift, finally reaching the object that detects hydrogen.
The Schottky diode hydrogen gas sensor core body that the present invention adopts semiconductor technology and micro fabrication to manufacture, has the advantages that detectability is low, and cost is low, can realize mass production, thereby has wide production and utilize prospect.
A kind of Schottky diode hydrogen gas sensor core body of the present invention, adopts palladium as sensitive layer, has good selectivity and stability; Heating resistor and temperature detecting resistance, can improve the thermal adaptability of sensor core.
The manufacture method of a kind of Schottky diode hydrogen gas sensor core body of the present invention, on semiconductor layer, utilize the oxidation of dry method wet-mixed to form silicon dioxide, and through etching remove portion silicon dioxide with form groove, then sputter forms palladium metal sensitive thin film layer, is used for measuring density of hydrogen; Described temperature detecting resistance and heating resistor can carry out temperature-compensating.
The Schottky diode hydrogen gas sensor core body that utilizes the manufacture method of a kind of Schottky diode hydrogen gas sensor core body of the present invention to make, be applied in Schottky diode hydrogen gas sensor, can be widely used in the detection field of density of hydrogen, and prepared Schottky diode hydrogen gas sensor is compared with catalytic combustion gas sensor with traditional metal oxide semiconductor sensor, not only selectivity and highly sensitive, and stability has improved 60%.
Accompanying drawing explanation
Fig. 1 is a kind of axonometric drawing of Schottky diode hydrogen gas sensor core body;
Fig. 2 is a kind of profile of Schottky diode hydrogen gas sensor core body;
Fig. 3 is a kind of flow chart of manufacture method of Schottky diode hydrogen gas sensor core body.
Embodiment
Embodiment one: see figures.1.and.2 and illustrate present embodiment, a kind of Schottky diode hydrogen gas sensor core body described in present embodiment, it comprises: temperature detecting resistance 1, the responsive thin layer 2 of metal, heating resistor 3, semiconductor layer 4, the first silicon dioxide layer 5-1 and the second silicon dioxide layer 5-2;
Described the first silicon dioxide layer 5-1 and the second silicon dioxide layer 5-2 are separately fixed at the both sides of semiconductor layer 4, and the second silicon dioxide layer 5-2 Yi Ce center that is fixed with on described semiconductor layer 4 has cavity 6;
On the first silicon dioxide layer 5-1, have groove, described groove is concave shape, and the responsive shape of thin layer 2 of described metal and the shape of groove are identical, and the responsive thin layer 2 of this metal is mounted in groove;
Embodiment two: present embodiment is that a kind of Schottky diode hydrogen gas sensor core body described in embodiment one is described further, in present embodiment, between the groove on the responsive thin layer 2 of described metal and the first silicon dioxide layer 5-1, be provided with chromium transition zone.
The chromium transition zone increasing in present embodiment can strengthen the adhesion of the responsive thin layer 2 of metal, makes to be better fixedly connected with between itself and the first silicon dioxide layer 5-1.
Embodiment three: present embodiment is that a kind of Schottky diode hydrogen gas sensor core body described in embodiment one is described further, and in present embodiment, the material of described semiconductor layer 4 is silicon.
Embodiment four: present embodiment is that a kind of Schottky diode hydrogen gas sensor core body described in embodiment one is described further, in present embodiment, the thickness of described the first silicon dioxide layer 5-1 and the second silicon dioxide layer 5-2 is all between 100nm to 300nm.
Embodiment five: present embodiment is that a kind of Schottky diode hydrogen gas sensor core body described in embodiment one is described further, in present embodiment, the thickness of described temperature detecting resistance 1 is between 90nm to 110nm, and resistance value is between 30 Ω to 50 Ω.
In present embodiment, the optimal thickness of described temperature detecting resistance 1 is 100nm;
Embodiment six: present embodiment is that a kind of Schottky diode hydrogen gas sensor core body described in embodiment one is described further, in present embodiment, the thickness of described heating resistor 3 is between 490nm to 510nm, and resistance value is between 3 Ω to 10 Ω.
In present embodiment, the optimal thickness of described heating resistor 3 is 500nm.
Embodiment seven: present embodiment is that a kind of Schottky diode hydrogen gas sensor core body described in embodiment one is described further, in present embodiment, the material of the described responsive thin layer 2 of metal is palladium, and the thickness of the responsive thin layer 2 of metal is between 200nm to 500nm.
Embodiment eight: present embodiment is that a kind of Schottky diode hydrogen gas sensor core body described in embodiment two is described further, and in present embodiment, the thickness of described chromium transition zone is between 40nm to 50nm.
Embodiment nine: illustrate present embodiment with reference to Fig. 1, Fig. 2 and Fig. 3, the manufacture method of a kind of Schottky diode hydrogen gas sensor core body described in present embodiment, the method comprises the following steps:
Step 1: semiconductor layer 4 is utilized to the oxidation of dry method wet-mixed, form respectively the first silicon dioxide layer 5-1 and the second silicon dioxide layer 5-2 in the upper and lower surface of semiconductor layer 4;
Step 2: the first silicon dioxide layer 5-1 that utilizes lithography corrosion technology to obtain in step 1 etches groove, utilize lithography corrosion technology to be covered with the second silicon dioxide layer 5-2 Yi Ce center at semiconductor layer 4 and etch cavity 6, on the first silicon dioxide layer 5-1, sputter forms temperature detecting resistance 1 and heating resistor 3;
Step 3: in the groove obtaining in step 2, sputter forms the responsive thin layer 2 of metal; Obtain Schottky diode hydrogen gas sensor core body.
Embodiment ten: present embodiment is that the manufacture method of a kind of Schottky diode hydrogen gas sensor core body described in embodiment nine is described further, in present embodiment, before step 1, the semiconductor layer 4 described in step 1 is cleaned, the process of described cleaning is:
Step is one by one: utilize acetone to clean semiconductor layer 4;
Embodiment 11: present embodiment is that the manufacture method of a kind of Schottky diode hydrogen gas sensor core body described in embodiment nine is described further, in present embodiment, before step 3, in the groove obtaining in step 2, sputter forms chromium transition zone.
In present embodiment, the chromium transition zone of described increase can strengthen the adhesion of the responsive thin layer 2 of metal.
Embodiment 12: present embodiment is that the manufacture method of a kind of Schottky diode hydrogen gas sensor core body described in embodiment nine or ten is described further, and in present embodiment, the material of described semiconductor layer 4 is silicon.
Embodiment 13: present embodiment is that the manufacture method of a kind of Schottky diode hydrogen gas sensor core body described in embodiment nine is described further, in present embodiment, the thickness of the first silicon dioxide layer 5-1 and the second silicon dioxide layer 5-2 is all between 100nm to 300nm described in step 1.
Embodiment 14: present embodiment is that the manufacture method of a kind of Schottky diode hydrogen gas sensor core body described in embodiment nine is described further, in present embodiment, the thickness of the temperature detecting resistance 1 described in step 2 is between 90nm to 110nm, and resistance value is between 30 Ω to 50 Ω.
In present embodiment, the optimal thickness of described temperature detecting resistance 1 is 100nm;
Embodiment 15: present embodiment is that the manufacture method of a kind of Schottky diode hydrogen gas sensor core body described in embodiment nine is described further, in present embodiment, the thickness of the heating resistor 3 described in step 2 is between 490nm to 510nm, and resistance value is between 3 Ω to 10 Ω.
In present embodiment, the optimal thickness of described heating resistor 3 is 500nm.
Embodiment 16: present embodiment is that the manufacture method of a kind of Schottky diode hydrogen gas sensor core body described in embodiment nine is described further, in present embodiment, the material of the responsive thin layer 2 of metal described in step 3 is palladium, and the thickness of the responsive thin layer 2 of metal is between 200nm to 500nm.
Embodiment 17: present embodiment is that the manufacture method of a kind of Schottky diode hydrogen gas sensor core body described in embodiment 11 is described further, and in present embodiment, the thickness of described chromium transition zone is between 40nm to 50nm.
Embodiment 18: present embodiment is that the manufacture method of a kind of Schottky diode hydrogen gas sensor core body described in embodiment nine is described further, in present embodiment, the sputtering condition that sputter forms the responsive thin layer 2 of metal is: sputtering pressure is between 2Pa to 4Pa, sputtering power is between 150W to 300W, sputter temperature is between 200 ℃ to 300 ℃, and sputtering time is between 8min to 12min.
In present embodiment, optimum sputtering time is 10min.
Claims (10)
1. a Schottky diode hydrogen gas sensor core body, it is characterized in that, it comprises: temperature detecting resistance (1), metal responsive thin layer (2), heating resistor (3), semiconductor layer (4), the first silicon dioxide layer (5-1) and the second silicon dioxide layer (5-2);
Described the first silicon dioxide layer (5-1) and the second silicon dioxide layer (5-2) are separately fixed at the both sides of semiconductor layer (4), be fixed with the second silicon dioxide layer (5-2) Yi Ce center and have cavity (6) on described semiconductor layer (4);
On the first silicon dioxide layer (5-1), have groove, described groove is concave shape, and the shape of the responsive thin layer of described metal (2) is identical with the shape of groove, and the responsive thin layer of this metal (2) is mounted in groove;
Temperature detecting resistance (1) and heating resistor (3) are all fixed on the surface of the first silicon dioxide layer (5-1), and are positioned at the both sides of the responsive thin layer 2 of metal; Wherein temperature detecting resistance (1) is positioned at the notched side of the responsive thin layer of metal (2), and this temperature detecting resistance (1) is several fonts, and the bossing of these a few font temperature detecting resistances (1) embeds in the recess of the responsive thin layer of metal (2).
2. a kind of Schottky diode hydrogen gas sensor core body according to claim 1, is characterized in that, between the groove on the responsive thin layer of described metal (2) and the first silicon dioxide layer (5-1), is provided with chromium transition zone.
3. a kind of Schottky diode hydrogen gas sensor core body according to claim 1, is characterized in that, the thickness of described temperature detecting resistance (1) is between 90nm to 110nm, and resistance value is between 30 Ω to 50 Ω; The thickness of described heating resistor (3) is between 490nm to 510nm, and resistance value is between 3 Ω to 10 Ω.
4. a manufacture method for Schottky diode hydrogen gas sensor core body, is characterized in that, the method comprises the following steps:
Step 1: semiconductor layer (4) is utilized to the oxidation of dry method wet-mixed, form respectively the first silicon dioxide layer (5-1) and the second silicon dioxide layer (5-2) in the upper and lower surface of semiconductor layer (4);
Step 2: the first silicon dioxide layer (5-1) surface etch of utilizing lithography corrosion technology to obtain in step 1 goes out groove, utilize lithography corrosion technology to be covered with the second silicon dioxide layer (5-2) Yi Ce center at semiconductor layer (4) and etch cavity (6), form temperature detecting resistance (1) and heating resistor (3) in the upper sputter of the first silicon dioxide layer (5-1);
Step 3: in the groove obtaining in step 2, sputter forms the responsive thin layer of metal (2); Obtain Schottky diode hydrogen gas sensor core body.
5. the manufacture method of a kind of Schottky diode hydrogen gas sensor core body according to claim 4, is characterized in that, before step 1, the semiconductor layer described in step 1 (4) is cleaned, and the process of described cleaning is:
Step is one by one: utilize acetone to clean semiconductor layer (4);
Step 1 two: utilize alcohol to clean semiconductor layer (4);
Step 1 three: utilize HF solution to clean semiconductor layer (4), then semiconductor layer (4) is dried.
6. the manufacture method of a kind of Schottky diode hydrogen gas sensor core body according to claim 4, is characterized in that, before step 3, in the groove obtaining in step 2, sputter forms chromium transition zone, and the thickness of described chromium transition zone is between 40nm to 50nm.
7. according to the manufacture method of a kind of Schottky diode hydrogen gas sensor core body described in claim 4 or 5, it is characterized in that, the material of described semiconductor layer (4) is silicon.
8. the manufacture method of a kind of Schottky diode hydrogen gas sensor core body according to claim 4, is characterized in that, the thickness of the first silicon dioxide layer (5-1) and the second silicon dioxide layer (5-2) is all between 100nm to 300nm described in step 1.
9. the manufacture method of a kind of Schottky diode hydrogen gas sensor core body according to claim 4, it is characterized in that, the material of the responsive thin layer of metal (2) described in step 3 is palladium, and the thickness of the responsive thin layer of metal (2) is between 200nm to 500nm.
10. the manufacture method of a kind of Schottky diode hydrogen gas sensor core body according to claim 4, it is characterized in that, the sputtering condition that sputter forms the responsive thin layer of metal (2) is: sputtering pressure is between 2Pa to 4Pa, sputtering power is between 150W to 300W, sputter temperature is between 200 ℃ to 300 ℃, and sputtering time is between 8min to 12min.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105424768A (en) * | 2015-11-30 | 2016-03-23 | 中国电子科技集团公司第四十八研究所 | Dielectric material for hydrogen sensor core, hydrogen sensor core and preparation method and application thereof |
| CN104374819B (en) * | 2014-11-04 | 2017-03-15 | 中国电子科技集团公司第四十八研究所 | A kind of multilayer film Schottky diode hydrogen gas sensor core body and preparation method thereof |
| CN107515235A (en) * | 2016-06-17 | 2017-12-26 | 深圳大学 | A kind of gas integrated sensor chip |
| CN108169294A (en) * | 2018-02-12 | 2018-06-15 | 中国工程物理研究院总体工程研究所 | Film hydrogen gas sensor with self-heating and temperature compensation function |
| CN108470732A (en) * | 2017-02-23 | 2018-08-31 | 丰田自动车株式会社 | Semiconductor device |
| CN112034012A (en) * | 2020-05-19 | 2020-12-04 | 北京机械设备研究所 | MEMS gas sensor gas-sensitive unit and preparation method thereof |
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| CN104374819B (en) * | 2014-11-04 | 2017-03-15 | 中国电子科技集团公司第四十八研究所 | A kind of multilayer film Schottky diode hydrogen gas sensor core body and preparation method thereof |
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| CN112034012A (en) * | 2020-05-19 | 2020-12-04 | 北京机械设备研究所 | MEMS gas sensor gas-sensitive unit and preparation method thereof |
| CN112034012B (en) * | 2020-05-19 | 2024-04-23 | 北京机械设备研究所 | MEMS gas sensor gas-sensitive unit and preparation method thereof |
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Application publication date: 20140507 |