CN103413797B - A kind of power semiconductor modular of three-dimensional structure unit assembling - Google Patents
A kind of power semiconductor modular of three-dimensional structure unit assembling Download PDFInfo
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- CN103413797B CN103413797B CN201310323097.5A CN201310323097A CN103413797B CN 103413797 B CN103413797 B CN 103413797B CN 201310323097 A CN201310323097 A CN 201310323097A CN 103413797 B CN103413797 B CN 103413797B
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- power semiconductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Abstract
A power semiconductor modular for three-dimensional structure unit assembling, is formed by Automatic manual transmission by multiple three-dimensional structure unit (6).The emitter of a three-dimensional structure unit is connected as a half-bridge cells by splicing ear with the collector electrode of another one three-dimensional structure unit, and multiple half-bridge cells is in parallel.The three-dimensional structure unit (6) of each power semiconductor modular by full-control type power semiconductor chip (10a), do not control type power semiconductor chip (10b), the first substrate (1), the second substrate (5) form; Described full-control type power semiconductor chip (10a) and do not control type power semiconductor chip (10b) and be positioned between the first substrate (1) and the second substrate (5), is arranged in juxtaposition.The grid (10a2) of full-control type power semiconductor chip (10a) is positioned at does not control type power semiconductor chip (10a) chip edge.Described power semiconductor modular passes into the cooling of insulating and cooling liquid body.
Description
Technical field
The present invention relates to a kind of power semiconductor modular of three-dimension packaging.
Background technology
In recent years, along with the development of new energy technology, powerful current transformer is widely used.The heat-sinking capability of inverter becomes a key problem jointly paid close attention to.The junction temperature of power semiconductor modular chip at work may reach 175 DEG C even higher, and too high junction temperature of chip greatly reduces the cycle-index of power semiconductor modular and then can reduce the useful life of module.
In present power semiconductor module, the connection between IGBT and diode is adopted to the method for metallic bond zygonema, the method easily causes the stripping of bonding line due to thermal fatigue under the high temperature conditions, greatly reduces the reliability of module.This traditional encapsulating structure chips front have employed bonding wire and carries out electric interconnection, and the chip therefore as thermal source can only dispel the heat by welding DBC and copper soleplate structure overleaf, and the radiating efficiency of traditional one side radiator structure is very limited.
In addition, high heat-flux power device makes thermal source chip surface temperature distributing disproportionation phenomenon more outstanding due to self uneven cooling channel structure.Current module generally adopts the mode being welded direct to copper soleplate to encapsulate, and this makes certain element failure cause whole module to be scrapped, and other intact cell mesh can not utilize further, and use cost is increased.
The power semiconductor modular that US Patent No. 0138452A1 and US7005743B2 proposes have employed the method for two-sided cooling, improve the cooling effect of module, but what the grid of the power semiconductor chip described in this patent adopted is that bonding wire is drawn, whole encapsulation process does not still break away from the dependence of para-linkage line, adds the process complexity of encapsulation.
Summary of the invention
The object of the invention is the shortcoming overcoming prior art, propose a kind of power semiconductor modular assembled without the three-dimensional structure unit of lead key closing process.One aspect of the present invention can reduce chip crust thermal resistance, reduce the junction temperature of chip, can reduce the stray parameter of module simultaneously, and then improve the power density of power semiconductor modular.
Power semiconductor modular of the present invention is made up of multiple three-dimensional structure unit, each three-dimensional structure unit is arranged on above insulating base by the mode that machinery is fixing, each three-dimensional structure unit can load and unload flexibly, avoid the problem because wherein certain cell failure causes module whole to lose efficacy, power semiconductor modular effectively can improve the heat dispersion of module simultaneously.
In power semiconductor modular of the present invention, the emitter of a three-dimensional structure unit is connected as a half-bridge cells by splicing ear with the collector electrode of another one three-dimensional structure unit, then selects the half-bridge cells of different number to carry out parallel connection according to different circuit requirements.In power semiconductor modular, the number of three-dimensional structure unit is determined by the voltage of chip, current class and the circuit structure that will realize.
Each three-dimensional structure unit by full-control type power semiconductor chip, do not control type power semiconductor chip, the first substrate, the second substrate, the first metallic gasket, the second metallic gasket and the 3rd metallic gasket and form, first welded metal pad is to the grid of full-control type power semiconductor chip, second welded metal pad is to the grid of full-control type power semiconductor chip, and the 3rd welded metal pad is to the positive pole not controlling type power semiconductor chip.First substrate forms by three layers: be positioned at the first metal layer above, the second metal level being positioned at the first middle electric insulation layer and being positioned at below.Described the first metal layer forms mutually discrete two parts by etching technics: the first metal layer gate electrode side and the first metal layer emitter side.The second described metal level forms two parts by etching technics: the second metallic layer gate side and the second metal level emitter side.The first metal layer gate electrode side is corresponding up and down with the position of the second metallic layer gate side, and the first metal layer emitter side is corresponding up and down with the second metal level emitter side.Be positioned at the first middle electric insulation layer and have a plated-through hole, the first metal layer gate electrode side is connected by described plated-through hole with the second metallic layer gate side.Electric insulation between the first metal layer emitter side and the second metal level emitter side.
Second substrate forms by three layers: be positioned at the 3rd metal level above, the 4th metal level being positioned at the second middle electric insulation layer and being positioned at below.3rd metal level forms unconnected two parts by etching technics: the 3rd metal level collector electrode side and the 3rd metal level emitter side, and the 3rd metal level collector electrode side is not connected with the 3rd metal level emitter side.
The first metal layer, the second metal level and the 3rd metal level all have circuit structure.
The electric insulation layer of two substrates adopts the highly heat-conductive materials such as aluminium oxide, aluminium nitride or silicon nitride to make, and the material of the metal level of two substrates is the alloy etc. of copper ﹑ aluminium or copper.Full-control type power semiconductor chip and do not control type power semiconductor chip and realize interconnection by the circuit structure of the metal level of two substrates.
First substrate is positioned at the top of whole three-dimensional structure unit, second substrate is positioned at the bottom of whole three-dimensional structure unit, full-control type power semiconductor chip and do not control type power semiconductor chip chain intermittent weld between the first substrate second metal level and the second substrate the 3rd metal level, the grid of full-control type power semiconductor chip is corresponding with the second metallic layer gate side, and the emitter of full-control type power semiconductor chip, the positive pole not controlling type power semiconductor chip are corresponding with the second metal level collector electrode side.
Full-control type power semiconductor chip is IGBT etc., and not controlling type power semiconductor chip is silicon-based diode or silicon carbide-based diode etc.
The grid of described full-control type power semiconductor chip is welded with the second metallic layer gate side of the first substrate by the first metallic gasket, and the first substrate second metallic layer gate side is connected with the first substrate the first metal layer gate electrode side by electric insulation layer plated-through hole; The emitter of full-control type power semiconductor chip and the positive pole not controlling type power semiconductor chip weld with the second metal level emitter side of the first substrate respectively by the second metallic gasket and the 3rd metallic gasket.The collector electrode of full-control type power semiconductor chip and the negative pole not controlling type power semiconductor chip weld with the collector electrode side of the 3rd metal level respectively; Second metal level emitter side is welded with the 3rd metal level emitter side by the 4th metallic gasket.
Power semiconductor modular is cooled by direct invasion insulation cooling circulating fluid.
Invention enhances the heat-sinking capability of power semiconductor modular, improve module power density, achieve again the flexible handling of three-dimensional structure unit on power semiconductor modular insulating base, therefore the present invention is specially adapted to the high heat-flux occasion such as large-scale wind energy, solar power plant simultaneously.Interconnected welding by metallic layer circuit between power semiconductor chip of the present invention is realized, and has broken away from the dependence of para-linkage technique, has improve the reliability of power semiconductor modular.
Accompanying drawing explanation
Fig. 1 a is the sectional view of three-dimensional structure unit;
Fig. 1 b is the left view of three-dimensional structure unit;
Fig. 2 is the vertical view of the first substrate of three-dimensional structure unit;
Fig. 3 is the upward view of three-dimensional structure unit first substrate;
Fig. 4 is the vertical view of three-dimensional structure unit second substrate;
Fig. 5 is three-dimensional structure unit installation diagram;
Fig. 6 a is the mounted inside figure of the embodiment of the present invention;
Fig. 6 b is the shell figure of the embodiment of the present invention.
Embodiment
The present invention is further illustrated below in conjunction with the drawings and specific embodiments.
Power semiconductor modular of the present invention is made up of multiple three-dimensional structure unit, and each three-dimensional structure unit is fixedly mounted on above insulating base.The emitter of a three-dimensional structure unit is connected as a half-bridge cells by splicing ear with the collector electrode of another one three-dimensional structure unit, and multiple half-bridge cells is in parallel.
As shown in Figure 1a, three-dimensional structure unit 6 comprises full-control type power semiconductor chip 10a, does not control type power semiconductor chip 10b, the first substrate 1, second substrate 5, first metallic gasket 8a, the second metallic gasket 9a, and the 3rd metallic gasket 9b.Described full-control type power semiconductor chip 10a and do not control type power semiconductor chip 10b between the first substrate 1 and the second substrate 5, is arranged in juxtaposition.
As shown in Figure 3, do not control type power semiconductor chip 10b in three-dimensional structure unit 6 and be positioned at side away from full-control type power semiconductor chip 10a grid 10a2, full-control type power semiconductor chip 10a, do not control type power semiconductor chip 10b and align with the left side edge of the second substrate.The grid 10a2 of described full-control type power semiconductor chip 10a is positioned at full-control type power semiconductor chip edge.
First substrate 1 and the second substrate 5 form by three-decker: middle one deck is electric insulation layer, electric insulation layer be metal level above and below.
First substrate 1 is made up of the first metal layer, the first electric insulation layer 1b and the second metal level; The first metal layer be positioned at above the first electric insulation layer 1b is divided into the first metal layer emitter side 1a1 and the first metal layer gate electrode side 1a2 two parts, not conducting between described the first metal layer emitter side 1a1 and the first metal layer gate electrode side 1a2; The second metal level be positioned at below the first electric insulation layer 1b is divided into the second metal level emitter side 1c1 and the first metal layer gate electrode side 1c2 two parts, not conducting between the second described metal level emitter side 1c1 and the second metallic layer gate side 1c2; The first metal layer gate electrode side 1a2 is connected by the plated-through hole 7c being positioned at the first insulating barrier 1b with the second metallic layer gate side 1c2.
The grid 10a2 of described full-control type power semiconductor chip 10a is corresponding with the second metallic layer gate side 1c2, and the emitter 10a1 of full-control type power semiconductor chip 10a, the positive pole 10b1 not controlling type power semiconductor chip are corresponding with the collector electrode side 1c1 of the second metal level.Second substrate 5 is made up of the 3rd metal level, the second electric insulation layer 5b and the 4th metal level 5c; 3rd metal level and the 4th metal level 5c lay respectively at the second electric insulation layer 5b above and below; 3rd metal level forms the 3rd metal level collector electrode side 5a1 and the 3rd metal level emitter side 5a2 two parts by etching technics, not conducting between the 3rd metal level collector electrode side 5a1 and the 3rd metal level emitter side 5a2.
As shown in Figure 2, Figure 3, Figure 4, the first metal layer, the second metal level and the 3rd metal level all have circuit structure.
As shown in Figure 1a, emitter 10a1, the negative pole 10b2 of not controlling type power semiconductor chip of full-control type power semiconductor chip 10a are welded on the 3rd metal level emitter side 5a1; Emitter 10a1, the grid 10a2 of full-control type power semiconductor chip 10a and do not control positive pole 10b1 respectively with the first metallic gasket 8a, the second metallic gasket 9a of type power semiconductor chip and the 3rd metallic gasket 9b welds; First metallic gasket 8a welds with the second metallic layer gate side 1c2 of the first substrate 1, and is connected with the first metal layer gate electrode side 1a2 of the first substrate 1 by plated-through hole 7c; Second metallic gasket 9a and the 3rd metallic gasket 9b welds with the second metal level emitter side 1c1 of the first substrate 1.
As shown in Figure 1 b, the second metal level emitter side 1c1 of the first substrate 1 is connected with the 3rd metal level emitter side 5a2 of the second substrate 5 by the 4th metallic gasket 11.
As shown in Figure 6 a, the emitter e 2 of the first three-dimensional structure unit and the collector electrode e3 of the second three-dimensional structure unit to be connected formation half-bridge cells by splicing ear 22; The emitter f2 of the 3rd three-dimensional structure unit and the collector electrode f3 of the 4th three-dimensional structure unit to be connected formation half-bridge cells by splicing ear 22, and the emitter g2 of the 5th three-dimensional structure unit connects as a half-bridge cells with the collector electrode g3 of the 6th three-dimensional structure unit by splicing ear 22; In three half-bridge cells first, the 3rd, the 5th three-dimensional structure unit collector electrode e1, f1, g1 is fixed on the positive terminal 20a of insulating base 17, the second, the emitter e 4 of the 4th, the 6th three-dimensional structure unit, f4, g4 are fixed on the negative terminal 20b of insulating base 17, and three groups of half-bridge cells realize in parallel by positive terminal 20a and negative terminal 20b.
There is the electrode of metallization pattern on described insulating base 17 surface: positive terminal 20a, negative terminal 20b, connects with the circuit realizing multiple three-dimensional structure unit.
Describe the structure of embodiments of the invention below in conjunction with accompanying drawing, the full-control type power semiconductor chip of this embodiment is IGBT, and not controlling type power semiconductor chip is silicon-based diode or silicon carbide-based diode.
As shown in Figure 1a, described igbt chip collector electrode 10a3 and diode chip for backlight unit negative pole 10b2 is welded on the 3rd metal level collector electrode side 5a1 of the second substrate 5 by unleaded or leaded slicken solder;
As shown in Figure 1 b, the bottom surface of the 4th metallic gasket 11 is welded with the 3rd metal level emitter side 5a2.
As shown in Figure 1a, the grid 10a2 of igbt chip welds with the first metallic gasket 8a; The positive pole 10b1 of igbt chip emitter 10a1, diode chip for backlight unit welds with the second metallic gasket 9a, the 3rd metallic gasket 9b respectively; The face bonding of the first metallic gasket 8a is connected to the second metallic layer gate side 1c of the first substrate 1, and the end face of the second metallic gasket 9a, the 3rd metallic gasket 9b, the 4th metallic gasket 11 is welded in the second metal level emitter side 1c1 of the first substrate; The metal layer material of the first substrate 1 and the second substrate 5 is the alloy of copper ﹑ aluminium or copper, and electric insulation layer is aluminium oxide, and the highly heat-conductive material such as aluminium nitride or silicon nitride makes, and adopts sintering to connect between electric insulation layer and metal level.
As shown in Figure 4, the 3rd metal level 5a is split into two parts: the 3rd metal level collector electrode side 5a1 and the 3rd metal level emitter side 5a2.3rd metal level collector electrode side 5a1 welds with the collector electrode 10a3 of igbt chip, and weld layer is 14a1; 3rd metal level emitter side 5a2 is connected with the emitter 10a1 of igbt chip by the 4th metallic gasket 11; 4th metallic gasket 11 and the 3rd metal level emitter side 5a2 pass through solder interconnections;
As shown in Figure 1a, the first metallic gasket 8a, the second metallic gasket 9a and the 3rd metallic gasket 9b weld with grid 10a2, the emitter 10a1 of igbt chip and the positive pole 10b1 of diode chip for backlight unit respectively;
As shown in Figure 5, the first described metallic gasket 8a welds with the grid 10a2 of igbt chip, first metallic gasket 8a welds with the second metallic layer gate side 1c2 of the first substrate 1, and the second metallic layer gate side 1c2 of the first substrate 1 passes through the connection of electric insulation layer plated-through hole 7c and the first metal layer gate electrode side 1a2.Second metallic gasket 9a, the 3rd metallic gasket, the 4th metallic gasket 11 weld with the second metal level emitter side 1c1 of the first substrate 1, so realize the encapsulation of three-dimensional structure unit.
As shown in Figure 6 a, the three-dimensional structure unit assembling power semiconductor modular of the present embodiment is a kind of full bridge structure, is fixed on insulating base 17 by splicing ear 22 and nut 24 by six three-dimensional structure unit.Ac output end 19a, 19b, 19c of three-dimensional structure unit assembling power semiconductor modular are drawn by the top exit 24 of outside terminal through the shell 16 of three-dimensional structure unit assembling power semiconductor modular, and top exit 24 and three-dimensional structure unit assemble the hole encapsulation process between ac output end 19a, 19b, 19c of power semiconductor modular.
As shown in Figure 6 b, the shell 16 of three-dimensional structure unit assembling power semiconductor modular is mounted with through the through hole 18 on insulating base 17 by rivet with insulating base 17, and to shell 16 and insulating base 17 by the contact sealing gap process in assembling.
The present invention passes into the cooling of insulating and cooling liquid body, can by external refrigerant compression equipment by with the entrance 21a of this power semiconductor modular and export 21b and be connected and carry out infiltration type heat radiation.
Claims (5)
1. a power semiconductor modular for three-dimensional structure unit assembling, it is characterized in that, described power semiconductor modular is made up of multiple three-dimensional structure unit, and each three-dimensional structure unit is fixedly mounted on insulating base (17); The emitter of a three-dimensional structure unit is connected as a half-bridge cells by splicing ear with the collector electrode of another one three-dimensional structure unit, and multiple half-bridge cells is in parallel;
Each three-dimensional structure unit is by full-control type power semiconductor chip (10a), do not control type power semiconductor chip (10b), first substrate (1), second substrate (5), first metallic gasket (8a), second metallic gasket (9a), and the 3rd metallic gasket (9b) composition, first metallic gasket (8a) is welded on the grid (10a2) of full-control type power semiconductor chip, second metallic gasket (9a) is welded on the emitter (10a1) of full-control type power semiconductor chip, 3rd metallic gasket (9b) is welded on the positive pole (10b1) not controlling type power semiconductor chip (10b), described full-control type power semiconductor chip (10a) and do not control type power semiconductor chip (10b) and be positioned between the first substrate (1) and the second substrate (5), is arranged in juxtaposition,
Described the first substrate (1) is made up of three-decker: be positioned at the first metal layer above, the second metal level being positioned at middle the first electric insulation layer (1b) and being positioned at below; Described the first metal layer forms two parts by etching technics: the first metal layer gate electrode side (1a2) and the first metal layer emitter side (1a1), not conducting between described the first metal layer emitter side (1a1) and the first metal layer gate electrode side (1a2); The second described metal level forms two parts by etching technics: the second metallic layer gate side (1c2) and the second metal level emitter side (1c1); The first metal layer gate electrode side (1a2) is corresponding up and down with the position of the second metallic layer gate side (1c2), and the first metal layer emitter side (1a1) is corresponding up and down with the second metal level emitter side (1c1); Be positioned at the first middle electric insulation layer and have a plated-through hole (7c), the first metal layer gate electrode side (1a2) is connected by described plated-through hole (7c) with the second metallic layer gate side (1c2); Electric insulation between the first metal layer emitter side (1a1) and the second metal level emitter side (1c1);
The grid (10a2) of full-control type power semiconductor chip (10a) is corresponding with the second metallic layer gate side (1c2), and the emitter (10a1) of full-control type power semiconductor chip (10a), the positive pole (10b1) not controlling type power semiconductor chip are corresponding with the collector electrode side (1c1) of the second metal level;
Second substrate (5) forms by three layers: be positioned at the 3rd metal level above, the 4th metal level (5c) being positioned at middle the second electric insulation layer (5b) and being positioned at below; 3rd metal level forms unconnected two parts by etching technics: the 3rd metal level collector electrode side (5a1) and the 3rd metal level emitter side (5a2), the 3rd metal level collector electrode side (5a1) and the 3rd metal level emitter side (5a2) not conducting.
2. power semiconductor modular according to claim 1, is characterized in that, described the first metal layer, the second metal level and the 3rd metal level all have circuit structure.
3. power semiconductor modular according to claim 1, it is characterized in that, the emitter (10a1) of described full-control type power semiconductor chip (10a), the negative pole (10b2) not controlling type power semiconductor chip are welded in the 3rd metal level emitter side (5a1); The emitter (10a1) of full-control type power semiconductor chip (10a), grid (10a2) and do not control positive pole (10b1) respectively with the first metallic gasket (8a), second metallic gasket (9a) of type power semiconductor chip, and the welding of the 3rd metallic gasket (9b); First metallic gasket (8a) welds with the second metallic layer gate side (1c2), and is connected with the first metal layer gate electrode side (1a2) by plated-through hole (7c); Second metallic gasket (9a) and the 3rd metallic gasket (9b) weld with the second metal level emitter side (1c1); Second metal level emitter side (1c1) is connected with the 3rd metal level emitter side (5a2) by the 4th metallic gasket (11).
4. power semiconductor modular according to claim 1, is characterized in that, described type of not controlling power semiconductor chip (10b) is positioned at the side of the grid (10a2) away from full-control type power semiconductor chip (10a); Full-control type power semiconductor chip (10a), do not control type power semiconductor chip (10b) and align with the left side edge of the second substrate, the grid (10a2) of described full-control type power semiconductor chip (10a) is positioned at full-control type power semiconductor chip edge.
5. power semiconductor modular according to claim 1, it is characterized in that, described power semiconductor modular passes into the cooling of insulating and cooling liquid body, and external refrigerant compression equipment is by with this power semiconductor modular entrance (21a) and export (21b) and be connected and carry out infiltration type heat radiation.
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| CN201310323097.5A CN103413797B (en) | 2013-07-29 | 2013-07-29 | A kind of power semiconductor modular of three-dimensional structure unit assembling |
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| CN201310323097.5A CN103413797B (en) | 2013-07-29 | 2013-07-29 | A kind of power semiconductor modular of three-dimensional structure unit assembling |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109269667A (en) * | 2018-09-15 | 2019-01-25 | 国网福建省电力有限公司 | A kind of Novel IGBT device and preparation method thereof with real-time temperature test sytem |
| CN110911395A (en) * | 2018-09-17 | 2020-03-24 | 株洲中车时代电气股份有限公司 | Double-sided heat dissipation IGBT module |
| CN116230666B (en) * | 2023-05-05 | 2023-08-08 | 烟台台芯电子科技有限公司 | DBC double-sided micro-channel refrigeration IGBT module and manufacturing method thereof |
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| WO1994001987A1 (en) * | 1992-07-06 | 1994-01-20 | Telefonaktiebolaget Lm Ericsson | Component module |
| US5793115A (en) * | 1993-09-30 | 1998-08-11 | Kopin Corporation | Three dimensional processor using transferred thin film circuits |
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