CN103326695A - Reconfigurable matching network matcher with MEMS switch - Google Patents
Reconfigurable matching network matcher with MEMS switch Download PDFInfo
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- CN103326695A CN103326695A CN201310245583XA CN201310245583A CN103326695A CN 103326695 A CN103326695 A CN 103326695A CN 201310245583X A CN201310245583X A CN 201310245583XA CN 201310245583 A CN201310245583 A CN 201310245583A CN 103326695 A CN103326695 A CN 103326695A
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Abstract
The invention relates to a reconfigurable matching network matcher with an MEMS switch. The reconfigurable matching network matcher comprises six MEMS bridge units, earth wires, a signal wire and six bias voltage mats, wherein the earth wires and the signal wire are sequentially arranged on a substrate in parallel, the six MEMS bridge units are sequentially perpendicular to the two earth wires and arranged on the substrate, and each MEMS bridge unit comprises two cantilever girder bridge films, a supporting girder bridge film and four bridge piers. The reconfigurable matching network matcher has the advantages that traditional switching elements such as PIN switch diodes, variable capacitance diodes or FETs are replaced by the MEMS switch on a silicon wafer to achieve frequency reconfiguration of a filter, a traditional coplanar waveguide transmission line on a PCB is replaced by a coplanar waveguide transmission line, and the reconfigurable matching network matcher is compact and simple in structure, micro in size, low in control circuit power dissipation, high in work efficiency, capable of being compatible with a traditional IC process, mature in process, low in cost and suitable for mass production.
Description
Technical field
The present invention relates to micro mechanical system and the technical field of microwave subject crossing, more particularly to a kind of restructural matching network adaptation containing mems switch.
Background technology
Matching network is one of pith in microwave radio commu system.In microwave relay communication, satellite communication, radar, broad band amplifier and multiplier, electronic countermeasure and its microwave measurement system, restructural matching network has a wide range of applications, RF MEMS restructurals matching networks can reduce the loss of antenna input, improve its performance, power amplifier can be made to obtain higher system effectiveness, the need for being mainly used in multiband communication system, radar and broadband tracking receiver and image-reject mixer application.
RF MEMS restructural matching technique network is by mems switch, and copline CPW transmission lines, variodenser etc. are constituted.In addition, RF MEMSs produce very low intermodulation distortion, so the reconfigurable circuit being made up of it, which meets them, filter with low insertion loss, high linearity；Applied to the requirement before low-noise amplifier/frequency mixer.
Can apply needs very wide and continuous quite band in military system, such as 2 ~ 18GHz or 0.1 ~ 6GHz, this is by using reconfigurable antenna, matching network and wave filter with regard to that can effectively realize, and restructural MEMS circuits can be provided for producing the impedance of big excursion, this is necessary for transistor and diode characteristic.
The content of the invention
Present invention aims to overcome that the deficiency of above prior art specifically has following technical scheme realization there is provided a kind of small volume, isolation be good, the low restructural matching network adaptation containing mems switch of insertion loss：
The restructural matching network adaptation containing mems switch, including six MEMS bridge units, first ground wire, second ground wire, signal wire and six bias pads, first ground wire, signal wire, second ground wire is set in parallel on substrate successively, six MEMS bridges unit is arranged on substrate perpendicular to two ground wire successively, each MEMS bridges unit includes two cantilever glider bridge films, one support beam bridge film and four bridge piers, the support beam bridge film is located between two cantilever glider bridge films and the bridge pier by being connected to two ends is across on the signal wire, two cantilever glider bridge films are free end relative to the corresponding end of support beam bridge film, the other end is connected for fixing end with bridge pier, six biass pad is connected respectively the cantilever glider bridge film of six MEMS bridges unit correspondence sides.
The further design of the restructural matching network adaptation containing mems switch is that the signal wire is isolated relative to support beam bridge film location by nitrided glasses insulating trip with bridge film.
The further design of the restructural matching network adaptation containing mems switch is, also include three inputs and three output ends, the input is correspondingly arranged in one end of first, second ground wire and signal wire respectively, and three output ends are correspondingly arranged in the other end of first, second ground wire and signal wire respectively.
The further design of the restructural matching network adaptation containing mems switch is, the bridge pier connected with cantilever glider bridge film fixing end is distributed on substrate along the ground wire of corresponding side respectively, and both sides of the six pairs of bridge piers being connected with support beam bridge film two ends along the signal wire are distributed on substrate.
The described restructural matching network adaptation containing mems switch is there is provided a kind of preparation method, and altogether using six pieces of mask plates, concrete operation step is as follows：
1）The sheet glass of 500 μ m-thicks is placed in H2O2:H2SO4=1:Then sheet glass is put into a cleaning fluid and boiled to boiling 10 minutes, deionized water cleaning a, cleaning fluid is NH by 1 mixed liquor, deionized water cleaning4OH、H2O2And the mixed liquor of deionized water, sheet glass is finally put into No. two cleaning fluids and boiled to boiling, deionized water rinsing, drying, drying, No. two cleaning fluids are HCl, H2O2And the mixed liquor of deionized water；
2）Hydatogenesis layers of chrome and layer gold successively on silica glass layer, thickness is respectively 800With 3000, process conditions are：Temperature and vacuum in vapourizing furnace are respectively 250 DEG C and 10 × 10-5Torr；
3）Positive photoresist is covered in on the surface of exterior domain by a mask plate figure of sheet glass by a mask plate, reserve the figure for needing to electroplate, plating gold forms input, output end, bridge pier and bias pad, and the thickness of electrodeposited coating is 2 μm, preparation next step operation of removing photoresist；
4）Method difference No. two mask plates of photoetching of No. 1 mask plate of positive photoresist photoetching, No. three mask plates, it is respectively 2 μm that plating gold, which forms ground wire, signal wire, bias line, thickness, in addition it is 3 μm that this time plating, which makes the thickness of input/output terminal, bias pad and bridge pier be increased by original 2 μm, preparation next step operation of removing photoresist；
5）No. two mask plates of negative-working photoresist, post bake 30 minutes in 120 DEG C of baking oven are placed on after development, then plasma etching 20 seconds, layer gold at normal temperatures finally successively non-plated parts, titanium layer are eroded, retain input/output terminal, ground wire, signal wire, bias pad, bias line and bridge pier, the formula for corroding the solution of gold are KI：I2：H2O=20g：6g：100ml, the solution of corrosion chromium is phosphoric acid；
6）Removed photoresist using oxygen gas plasma etching, etching power, oxygen flow, etch period are respectively 50W, 60ml/min and 20 seconds；
7）The silicon nitride film that a layer thickness is 0.3 μm is deposited in glass sheet surface with chemical vapor deposition, ammonia flow, glass alkane flow and temperature are respectively 28ml/min, 560ml/min and 280 DEG C；
8）Figure on No. four plates is covered with positive photoresist, the nitrided glasses film needed is protected.Then SF is used6Gaseous plasma etch nitride glass-film, power, SF6The flow and etch period of gas be respectively 50w, 2.4ml/s and 1 point 20 seconds；
9）Under 2000 revs/min of rotating speed, the polyimide film for being in glass sheet surface spin coating a layer thickness is as sacrifice layer, dried one hour at 90 DEG C, again half an hour is dried at 130 DEG C, the positive photoresist of the μ m-thick of spin coating 2 on sacrifice layer, by No. 5 mask plate photoetching, positive photoresist is removed after development, obtain sacrificing layer pattern, sheet glass is then solidified into 1 hour at 260 DEG C；
10）5 × 10-5To be 0.5 μm of lead glass alloy film evaporation deposition on the surface of sheet glass containing glass 4% and thickness under Torr vacuum；
11）Sheet glass, is placed on the H of concentration >=85% by No. six mask plates of negative-working photoresist at 70 DEG C3PO4In solution, the bubble that corrosion lead glass alloy film is emerged into phosphoric acid solution is very faint, forms bridge film, and sheet glass is cleaned up rapidly with deionized water；
12）Plasma etching removes negtive photoresist and sacrifice layer, plasma etching power, oxygen flow and nitrogen flow are respectively 50w, 60ml/s and 2.8ml/s, six hanging support beam bridge film membrane structures and 12 cantilever glider bridge film membrane structures are obtained, the structure is exactly mems switch movable contact flat.
Advantages of the present invention is as follows：
1st, the impedance network adaptation is formed by the mems switch and coplanar waveguide transmission line deposited on the glass sheet, the former substitutes the frequency reconfiguration that the switching devices such as traditional PIN switching diodes, varactor or FET realize adaptation, the latter instead of the coplanar waveguide transmission line on traditional pcb board, there is that compact conformation is simple, size is small, isolation good, insertion loss is low, control circuit power consumption is low, working frequency is high.
2nd, the wave filter can be integrated on the substrate of glass, technical maturity is with low cost with traditional IC process compatibles, is suitable for batch production.
Brief description of the drawings
Fig. 1 is the net mate device structure chart.
Fig. 2 is the profile of AA ' in Fig. 1.
Fig. 3 is the schematic diagram of a mask plate figure.
Fig. 4 is the schematic diagram of No. two mask plate figures.
Fig. 5 is the schematic diagram of No. three mask plate figures.
Fig. 6 is the schematic diagram of No. four mask plate figures.
Fig. 7 is the schematic diagram of No. five mask plate figures.
Fig. 8 is the impedance matching test result S parameter that several frequencies for selecting are carried out between frequency range before the reconstruct of restructural matching network.
Fig. 9 is the S parameter after the reconstruct of restructural matching network.
In figure, 1-MEMS bridge units, 11- bridge piers, 12- cantilever glider bridge films, 13- support beam bridge films, the ground wires of 21- first, the ground wires of 22- second, 3- signal wires, 4- inputs, 5- output ends, 6- bias pads, 7- substrates, 8- nitrided glasses insulating trips.
Embodiment
The present invention program is described in detail below in conjunction with the accompanying drawings.
The restructural matching network adaptation containing mems switch that the present embodiment is provided, including six MEMS bridge units, first ground wire, second ground wire, signal wire and six bias pads, first ground wire, signal wire, second ground wire is set in parallel on substrate successively, six MEMS bridges units are arranged on substrate perpendicular to two ground wires successively, each MEMS bridges unit includes two cantilever glider bridge films, one support beam bridge film and four bridge piers, support that beam bridge film is located between two cantilever glider bridge films and the bridge pier by being connected to two ends is across on signal wire, two cantilever glider bridge films are free end relative to the corresponding end of support beam bridge film, the other end is connected for fixing end with bridge pier, six bias pads are connected respectively the cantilever glider bridge film of six MEMS bridges unit correspondence sides.The bridge pier connected with cantilever glider bridge film fixing end is distributed on substrate along the ground wire of corresponding side respectively, and six pairs of bridge piers being connected with support beam bridge film two ends are distributed on substrate along the both sides of signal wire.Signal wire is isolated relative to support beam bridge film location by nitrided glasses insulating trip with bridge film.
The net mate device that the present embodiment is provided also includes three inputs and three output ends, input is correspondingly arranged in one end of first, second ground wire and signal wire respectively, and three output ends are correspondingly arranged in the other end of first, second ground wire and signal wire respectively.
The function that the restructural matching network is reconstructed by the closing and unlatching of six MEMS support beams switches and 12 cantilever switch.Before reconstruct, voltage is not applied to MEMS bridges, when applying voltage 28V voltages to MEMS bridges, MEMS bridges are pulled down by electrostatic force so that electric capacity changes so that impedance changes, so as to realize the reconstruct of restructural impedance matching network.
The restructural impedance matching network of the present invention is especially suited for application in phased array, makees multiband and the restructural matching network in broadband, there is that size is small, frequency is high, insertion loss is small.In addition, it may also be used for radio-frequency devices are integrated, it is that the development of Future Mobile Communication contributes.MEMS restructurals matching network will turn into new generation of wireless communication system, as high restructural, the wireless and satellite communication network and radar of low cost and low-power consumption, restructural navigation position identifying system, the intelligent RF front ends of the autoguide of smart weapon important composition partly, the Adaptable System being made up of MEMS technology is able to maintain that the linearity that the low loss of radio-frequency front-end is become reconciled, and can reduce the outer component of piece.
The present embodiment is according to the net mate device there is provided a kind of preparation method, and using six pieces of mask plates, concrete operation step is as follows：
1）The sheet glass of 500 μ m-thicks is placed in H2O2:H2SO4=1:Then sheet glass is put into a cleaning fluid and boiled to boiling 10 minutes, deionized water cleaning a, cleaning fluid is NH by 1 mixed liquor, deionized water cleaning4OH、H2O2And the mixed liquor of deionized water, match as 27%NH4OH：30%H2O2：Deionized water=1: 2:5, sheet glass is finally put into No. two cleaning fluids and boiled to boiling, deionized water rinsing, drying, drying, a cleaning fluid is HCL, H2O2And the mixed liquor of deionized water, match as 37% HCL：30%H2O2：Deionized water=1：2：8.
2）Hydatogenesis layers of chrome and layer gold successively on silica glass layer, thickness is respectively 800With 3000, process conditions are：Temperature and vacuum in vapourizing furnace are respectively 250 DEG C and 10 × 10-5Torr。
3）Positive photoresist is covered in on the surface of exterior domain by a mask plate figure of sheet glass by a mask plate, reserve the figure for needing to electroplate, plating gold forms input, output end, bridge pier and bias pad, and the thickness of electrodeposited coating is 2 μm, preparation next step operation of removing photoresist.
4）Method difference No. two mask plates of photoetching of No. 1 mask plate of positive photoresist photoetching, No. three mask plates, it is respectively 2 μm that plating gold, which forms ground wire, signal wire, bias line, thickness, in addition it is 3 μm that this time plating, which makes the thickness of input/output terminal, bias pad and bridge pier be increased by original 2 μm, preparation next step operation of removing photoresist.
5）No. two mask plates of negative-working photoresist, post bake 30 minutes in 120 DEG C of baking oven are placed on after development, then plasma etching 20 seconds, layer gold at normal temperatures finally successively non-plated parts, titanium layer are eroded, retain input/output terminal, ground wire, signal wire, bias pad, bias line and bridge pier, the formula for corroding the solution of gold are KI：I2：H2O=20g：6g：100ml, the solution of corrosion chromium is phosphoric acid.
6）Removed photoresist using oxygen gas plasma etching, etching power, oxygen flow, etch period are respectively 50W, 60ml/min and 20 seconds.
7）The silicon nitride film that a layer thickness is 0.3 μm is deposited in glass sheet surface with chemical vapor deposition, ammonia flow, glass alkane flow and temperature are respectively 28ml/min, 560ml/min and 280 DEG C.
8）Figure on No. four plates is covered with positive photoresist, the nitrided glasses film needed is protected.Then SF is used6Gaseous plasma etch nitride glass-film, power, SF6The flow and etch period of gas be respectively 50w, 2.4ml/s and 1 point 20 seconds.
9）Under 2000 revs/min of rotating speed, the polyimide film for being in glass sheet surface spin coating a layer thickness is as sacrifice layer, dried one hour at 90 DEG C, again half an hour is dried at 130 DEG C, the positive photoresist of the μ m-thick of spin coating 2 on sacrifice layer, by No. 5 mask plate photoetching, positive photoresist is removed after development, obtain sacrificing layer pattern, sheet glass is then solidified into 1 hour at 260 DEG C.
10）5 × 10-5To be 0.5 μm of lead glass alloy film evaporation deposition on the surface of sheet glass containing glass 4% and thickness under Torr vacuum.
11）Sheet glass, is placed on the H of concentration >=85% by No. six mask plates of negative-working photoresist at 70 DEG C3PO4In solution, the bubble that corrosion lead glass alloy film is emerged into phosphoric acid solution is very faint, forms bridge film, and sheet glass is cleaned up rapidly with deionized water.
12）Plasma etching removes negtive photoresist and sacrifice layer, plasma etching power, oxygen flow and nitrogen flow are respectively 50w, 60ml/s and 2.8ml/s, eight hanging support beam bridge film membrane structures and 16 cantilever glider bridge film membrane structures are obtained, the structure is exactly mems switch movable contact flat.
Claims (5)
1. a kind of restructural matching network adaptation containing mems switch, it is characterized in that including six MEMS bridge units, first ground wire, second ground wire, signal wire and six bias pads, first ground wire, signal wire, second ground wire is set in parallel on substrate successively, six MEMS bridges unit is arranged on substrate perpendicular to two ground wire successively, each MEMS bridges unit includes two cantilever glider bridge films, one support beam bridge film and four bridge piers, the support beam bridge film is located between two cantilever glider bridge films and the bridge pier by being connected to two ends is across on the signal wire, two cantilever glider bridge films are free end relative to the corresponding end of support beam bridge film, the other end is connected for fixing end with bridge pier, six biass pad is connected respectively the cantilever glider bridge film of six MEMS bridges unit correspondence sides.
2. the restructural matching network adaptation according to claim 1 containing mems switch, it is characterised in that the signal wire is isolated relative to support beam bridge film location by nitrided glasses insulating trip with bridge film.
3. the restructural matching network adaptation according to claim 1 containing mems switch, characterized by further comprising three inputs and three output ends, the input is correspondingly arranged in one end of first, second ground wire and signal wire respectively, and three output ends are correspondingly arranged in the other end of first, second ground wire and signal wire respectively.
4. the restructural matching network adaptation according to claim 1 containing mems switch, it is characterized in that the bridge pier connected with cantilever glider bridge film fixing end is distributed on substrate along the ground wire of corresponding side respectively, both sides of the six pairs of bridge piers being connected with support beam bridge film two ends along the signal wire are distributed on substrate.
5. there is provided a kind of preparation method for the restructural matching network adaptation containing mems switch as described in claim 1-3, it is characterised in that altogether using six pieces of mask plates, concrete operation step is as follows：
1）The sheet glass of 500 μ m-thicks is placed in H2O2:H2SO4=1:Then sheet glass is put into a cleaning fluid and boiled to boiling 10 minutes, deionized water cleaning a, cleaning fluid is NH by 1 mixed liquor, deionized water cleaning4OH、H2O2And the mixed liquor of deionized water, sheet glass is finally put into No. two cleaning fluids and boiled to boiling, deionized water rinsing, drying, drying, No. two cleaning fluids are HCl, H2O2And the mixed liquor of deionized water；
2）Hydatogenesis layers of chrome and layer gold successively on silica glass layer, thickness is respectively 800With 3000, process conditions are：Temperature and vacuum in vapourizing furnace are respectively 250 DEG C and 10 × 10-5Torr；
3）Positive photoresist is covered in on the surface of exterior domain by a mask plate figure of sheet glass by a mask plate, reserve the figure for needing to electroplate, plating gold forms input, output end, bridge pier and bias pad, and the thickness of electrodeposited coating is 2 μm, preparation next step operation of removing photoresist；
4）Method difference No. two mask plates of photoetching of No. 1 mask plate of positive photoresist photoetching, No. three mask plates, it is respectively 2 μm that plating gold, which forms ground wire, signal wire, bias line, thickness, in addition it is 3 μm that this time plating, which makes the thickness of input/output terminal, bias pad and bridge pier be increased by original 2 μm, preparation next step operation of removing photoresist；
5）No. two mask plates of negative-working photoresist, post bake 30 minutes in 120 DEG C of baking oven are placed on after development, then plasma etching 20 seconds, layer gold at normal temperatures finally successively non-plated parts, titanium layer are eroded, retain input/output terminal, ground wire, signal wire, bias pad, bias line and bridge pier, the formula for corroding the solution of gold are KI：I2：H2O=20g：6g：100ml, the solution of corrosion chromium is phosphoric acid；
6）Removed photoresist using oxygen gas plasma etching, etching power, oxygen flow, etch period are respectively 50W, 60ml/min and 20 seconds；
7）The silicon nitride film that a layer thickness is 0.3 μm is deposited in glass sheet surface with chemical vapor deposition, ammonia flow, glass alkane flow and temperature are respectively 28ml/min, 560ml/min and 280 DEG C；
8）Figure on No. four plates is covered with positive photoresist, the nitrided glasses film needed is protected；
Then SF is used6Gaseous plasma etch nitride glass-film, power, SF6The flow and etch period of gas be respectively 50w, 2.4ml/s and 1 point 20 seconds；
9）Under 2000 revs/min of rotating speed, the polyimide film for being in glass sheet surface spin coating a layer thickness is as sacrifice layer, dried one hour at 90 DEG C, again half an hour is dried at 130 DEG C, the positive photoresist of the μ m-thick of spin coating 2 on sacrifice layer, by No. 5 mask plate photoetching, positive photoresist is removed after development, obtain sacrificing layer pattern, sheet glass is then solidified into 1 hour at 260 DEG C；
10）5 × 10-5To be 0.5 μm of lead glass alloy film evaporation deposition on the surface of sheet glass containing glass 4% and thickness under Torr vacuum；
11）Sheet glass, is placed on the H of concentration >=85% by No. six mask plates of negative-working photoresist at 70 DEG C3PO4In solution, the bubble that corrosion lead glass alloy film is emerged into phosphoric acid solution is very faint, forms bridge film, and sheet glass is cleaned up rapidly with deionized water；
12）Plasma etching removes negtive photoresist and sacrifice layer, plasma etching power, oxygen flow and nitrogen flow are respectively 50w, 60ml/s and 2.8ml/s, six hanging support beam bridge film membrane structures and 12 cantilever glider bridge film membrane structures are obtained, the structure is exactly mems switch movable contact flat.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103812466A (en) * | 2014-02-17 | 2014-05-21 | 东南大学 | Micro-mechanical cantilever beam type four-state reconfigurable microwave band-pass filter and preparation method |
| CN105712287A (en) * | 2014-12-02 | 2016-06-29 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device manufacturing method |
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|---|---|---|---|---|
| US20040227583A1 (en) * | 2003-05-12 | 2004-11-18 | Hrl Laboratories, Llc | RF MEMS switch with integrated impedance matching structure |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040227583A1 (en) * | 2003-05-12 | 2004-11-18 | Hrl Laboratories, Llc | RF MEMS switch with integrated impedance matching structure |
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| Title |
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| 郭兴龙: "基于RF MEMS 技术的微波接收前端关键部件实现研究", 《中国博士学位论文全文数据库》, 15 May 2008 (2008-05-15), pages 81 - 82 * |
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| CN103812466A (en) * | 2014-02-17 | 2014-05-21 | 东南大学 | Micro-mechanical cantilever beam type four-state reconfigurable microwave band-pass filter and preparation method |
| CN103812466B (en) * | 2014-02-17 | 2016-04-13 | 东南大学 | Micromachine cantilever beam formula four state reconfigurable microwave band pass filter and preparation method |
| CN105712287A (en) * | 2014-12-02 | 2016-06-29 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device manufacturing method |
| CN105712287B (en) * | 2014-12-02 | 2017-09-26 | 中芯国际集成电路制造(上海)有限公司 | The preparation method of semiconductor devices |
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