CN103311133B - Reverse installation process before a kind of power semiconductor modular welding - Google Patents
Reverse installation process before a kind of power semiconductor modular welding Download PDFInfo
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- CN103311133B CN103311133B CN201310188011.2A CN201310188011A CN103311133B CN 103311133 B CN103311133 B CN 103311133B CN 201310188011 A CN201310188011 A CN 201310188011A CN 103311133 B CN103311133 B CN 103311133B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
Abstract
The invention provides the front reverse installation process of a kind of power semiconductor modular welding, belong to power equipment technical field of semiconductor device.It solve the problem that product quality is low and cost is high that existing technique makes.Reverse installation process before the welding of this power semiconductor modular, concrete steps are as follows: first at bottom placing rack, its support is provided with mounting groove, extraction electrode is placed at the ground floor of mounting groove, the second layer places intraconnection electrode, and third layer places tube core or chip, and the 4th layer prevents insulating trip or DBC substrate, layer 5 places base plate, and every layer of parts placed position respectively by support, support and fix.This reverse installation process can improve the productivity ratio of power semiconductor modular, and the product quality of producing is better, and cost is lower.
Description
Technical field
The invention belongs to power equipment technical field of semiconductor device, relate to the front reverse installation process of a kind of power semiconductor modular welding.
Background technology
Base plate, tube core or chip, extraction electrode will weld by high-power semiconductor module before packaging, will assemble base plate, tube core or chip, extraction electrode and fix before welding.
All just adopting (suitable) to fill process (as shown in Figure 2) to realize in domestic and international prior art, what is called is (suitable) dress process just, exactly base plate is placed on bottom 5, on base plate, tube core 3 is placed in superposition, then extraction electrode 1 is placed in superposition on tube core.In order to make tube core and base plate insulate, what will increase insulating trip or semiconductor betwixt covers copper ceramic substrate DBC (Direct-Bond Copper) substrate 4; In order to make to weld between each layer, weld tabs 6,7,8,9 is increased again at each interlayer, thus define nearly nine layers just (suitable) dress technique, but there is following problem in this just (suitable) dress technique, the first, fixed support manufactures complicated, and fixing difficulty, dismantle difficulty, almost can not complete assembling; The second, between layers the accuracy of pad aligned position is very poor, and cause device performance consistency very poor, defective products is high; The complexity of three, assembling support causes packaging technology complicated, and add built-up time, labor productivity is low, can not realize production line balance; 4th, extraction electrode directly can not weld with chip, thus introduces filament again and carries out transition connection, disposablely can not complete assembling.In sum, just (suitable) dress method before power semiconductor modular welding, can not solve the batch production problem of power semiconductor modular well, can not control quality and the product cost of product well.
Summary of the invention
The object of the invention is to there are the problems referred to above for existing technology, propose the front reverse installation process of a kind of power semiconductor modular welding, this reverse installation process can improve the productivity ratio of power semiconductor modular, and the product quality of producing is better, and cost is lower.
Object of the present invention realizes by following technical proposal: reverse installation process before a kind of power semiconductor modular welding, described power semiconductor modular comprises base plate, insulating trip or DBC substrate, tube core or chip, intraconnection electrode and extraction electrode, it is characterized in that, the concrete steps of this reverse installation process are as follows:
Step one, making one have mounting groove and the support being supported by mounting groove parts each in power semiconductor modular and fix;
Step 2, extraction electrode is placed on support mounting groove in and be fixed on the positioning, described extraction electrode comprises extraction pole for connecting external circuits and the welding pole for being connected with miscellaneous part in power semiconductor modular, its extraction pole inserts in the mounting groove of support down, and welding pole upward;
Step 3, being placed on by intraconnection electrode on extraction electrode and being fixed on the positioning by support, its intraconnection electrode is extremely connected with the welding of extraction electrode by bonding pad;
Step 4, be placed on intraconnection electrode by tube core or chip, tube core or chip are connected with intraconnection electrode with molybdenum sheet by bonding pad;
Step 5, insulating trip or DBC substrate to be placed on tube core or chip, and fixing by support location, and its insulating trip or DBC substrate are connected with tube core or chip by bonding pad;
Step 6, on insulating trip or DBC substrate, place base plate, its base plate is connected with insulating trip or DBC substrate by bonding pad, and is fixed by support, supports and locates.
Before the welding of this power semiconductor modular, reverse installation process changes existing packaging technology mode, adopt first at bottom placing rack, its support is provided with mounting groove, extraction electrode is placed at the ground floor of mounting groove, the second layer places intraconnection electrode, third layer places tube core or chip, 4th layer prevents insulating trip or DBC substrate, layer 5 places base plate, every layer of parts placed position respectively by support, support and fix, its accurate positioning, solve in existing packaging technology, first base plate is placed bottom, insulating trip is placed in superposition again, the parts such as tube core, then be fixed by support, the problem that the accuracy of pad aligned position is between layers poor is easily caused in its fixation procedure, and present invention efficiently solves the problems referred to above, and improve quality and the production of product.
Before the welding of above-mentioned power semiconductor modular in reverse installation process, in described step one, described support makes according to the difference of power semiconductor modular structure, is used for supporting, fixing and positioning plate, insulating trip or DBC substrate, tube core or chip, intraconnection electrode and extraction electrode.This support can be dismantled after power semiconductor modular welding terminates, to take out the power semiconductor modular after welding.The alloy that the material making this support is a kind of not varying with temperature and is out of shape, profile is cuboid, and the geomery of inner die cavity is according to corresponding power semiconductor modular structure fabrication.
Before the welding of above-mentioned power semiconductor modular in reverse installation process, in described step one, the mounting groove that described support is arranged is the forge piece of step type structure of both sides symmetry, its forge piece of step type structure has four stratum, first stratum of both sides forge piece of step type structure is connected formation groove, and four described stratum are respectively used to each parts of locating and supporting in power semiconductor modular.
Before the welding of above-mentioned power semiconductor modular in reverse installation process, in described step 2, described extraction electrode is provided with several, and described extraction electrode inserts in above-mentioned groove, and the length of extraction electrode is higher than groove.The extraction electrode inserted in groove is not easily movable, accurate positioning, and assembling is simple, is conducive to be connected stable with intraconnection electrode, reduces rosin joint, dry joint, improve the reliability of Product jointing.In power semiconductor modular, extraction electrode can arrange multiple according to the difference of functions of modules.
Before the welding of above-mentioned power semiconductor modular in reverse installation process, in described step 3, described intraconnection electrode is placed in the second stratum of mounting groove, described intraconnection electrode comprises several electrodes and connecting portion, several described electrodes are connected with connecting portion by the intercell connector that both sides are at a right angle, several electrodes are that axle is symmetrical between two with connecting portion, a right-angle side of the intercell connector that connecting portion is connected with its connecting portion both sides forms the shape of a door and can be socketed on the extraction electrode higher than groove, the height of its second stratum equals the height placed tube core or chip on electrode after.
Before the welding of above-mentioned power semiconductor modular in reverse installation process, in described step 4, before placement tube core or chip, first on the electrode of intraconnection electrode, place molybdenum sheet, then place bonding pad.The wettability on molybdenum sheet surface, plays an important role to adhesion strength, and wettability is better, and adhesion strength is larger, and the quality of closure is better.
Before the welding of above-mentioned power semiconductor modular in reverse installation process, in described step 4, intraconnection electrode can place multiple tube core or chip.The number of placing tube core or chip is according to the function of semiconductor module and the power decision of module.
Before the welding of above-mentioned power semiconductor modular in reverse installation process, in described step 5, the third class that described insulating trip or DBC substrate are placed on mounting groove is positioned by third class and supports.Between base plate and tube core or chip, place insulating trip or DBC substrate, base plate and tube core or chip can be made reliably to insulate, improve reliability and the capability and performance of product.
Before the welding of above-mentioned power semiconductor modular in reverse installation process, in described step 5, described DBC substrate comprises copper clad patterns face and non-Copper Foil picture surface, when placing, its copper clad patterns faces down, be connected with tube core or chip by bonding pad, non-Copper Foil picture surface upward, is connected with base plate by bonding pad.
Before the welding of above-mentioned power semiconductor modular in reverse installation process, in described step 6, the 4th stratum that described base plate is placed on mounting groove is positioned by the 4th stratum and supported.
Compared with prior art, before the welding of this power semiconductor modular, reverse installation process has the following advantages:
1, packaging technology step of the present invention is completely contrary with formal dress technique in prior art, by special support, the individual parts in power semiconductor modular are positioned, support and fixed, achieve disposable assembling, improve the precision of location, make properties of product consistency very good; Adopt technology of the present invention to make simple for assembly process, whole process flow for assembling can disposablely complete, and is conducive to industrialized mass.
2, after power semiconductor modular being assembled by the present invention, disposable welding can be realized, improve the q&r of product.
Accompanying drawing explanation
Fig. 1 is technique assembly drawing of the present invention.
Fig. 2 is the technique assembly drawing of prior art.
In figure, 1, support; 1a, mounting groove; 2, extraction electrode; 2a, extraction pole; 2b, welding pole; 3, intraconnection electrode; 3a, connecting portion; 3b, electrode; 3c, intercell connector; 4, tube core or chip; 5, insulating trip or DBC substrate; 6, base plate; 7, bonding pad.
Embodiment
Be below specific embodiments of the invention and by reference to the accompanying drawings, technical scheme of the present invention is further described, but the present invention be not limited to these embodiments.
As shown in Figure 1, reverse installation process before the welding of this power semiconductor modular, its power semiconductor modular comprises base plate 6, insulating trip or DBC substrate 5, tube core or chip 4, intraconnection electrode 3 and extraction electrode 2, and the concrete steps of this reverse installation process are as follows: step one, making one have mounting groove 1a and the support 1 being supported by mounting groove 1a parts each in power semiconductor modular and fix; Step 2, extraction electrode 2 is placed on support 1 mounting groove 1a in and be fixed on the positioning, extraction electrode 2 comprises extraction pole 2a for connecting external circuits and the welding pole 2b for being connected with miscellaneous part in power semiconductor modular, its extraction pole 2a inserts in the mounting groove 1a of support 1 down, and welding pole 2b upward; Step 3, being placed on by intraconnection electrode 3 on extraction electrode 2 and being fixed on the positioning by support 1, its intraconnection electrode 3 is connected with the welding pole 2b of extraction electrode 2 by bonding pad 7; Step 4, be placed on intraconnection electrode 3 by tube core or chip 4, tube core or chip 4 are connected with intraconnection electrode 3 with molybdenum sheet by bonding pad 7; Step 5, insulating trip or DBC substrate 5 to be placed on tube core or chip 4, and to be located by support 1 fixing, its insulating trip or DBC substrate 5 are connected with tube core or chip 4 by bonding pad 7; Step 6, on insulating trip or DBC substrate 5, place base plate 6, its base plate 6 is connected with insulating trip or DBC substrate 5 by bonding pad 7, and is fixed by support 1, supports and is located.
Specifically, in step, the structure of support 1 is different according to the difference of power semiconductor modular structure, the structure of the power semiconductor modular assembled as required selects special support 1, can be supported, fixes and location by special support 1 to base plate 6, insulating trip or DBC substrate 5, tube core or chip 4, intraconnection electrode 3 and extraction electrode 2.This support 1 can movable, dismounting after power semiconductor modular welding terminates, to take out the power semiconductor modular after welding.The alloy that the material making this support is a kind of not varying with temperature and is out of shape, profile is cuboid, and the geomery of inner die cavity is according to corresponding power semiconductor modular structure fabrication.
In the present embodiment, this support is a kind of support being applicable to high-power Ultrafast recovery diode module, this support 1 inside made is provided with mounting groove 1a, this mounting groove 1a is the forge piece of step type structure of both sides symmetry, its forge piece of step type structure has four stratum, first stratum of both sides forge piece of step type structure is connected formation groove, four stratum in mounting groove 1a are respectively used to each parts of locating and supporting in power semiconductor modular, the groove that its first stratum is formed is for placing extraction electrode 2, after extraction electrode 2 puts into groove, its length is higher than the height of groove; Second stratum for placing intraconnection electrode 3, the height of its second stratum equal intraconnection electrode 3 placed tube core or chip 4 after height; Third class is for placing insulating trip or DBC substrate 5, and the length of its third class is slightly larger than the length of insulating trip or DBC substrate 5, and height is substantially equal with the thickness of insulating trip or DBC substrate 5; 4th layer for placing base plate 6, its length of the 4th layer slightly larger than the length of base plate 6, height substantially equal with the thickness of base plate 6.
In step 2, extraction electrode 2 is provided with several, and extraction electrode 2 inserts in groove, and the length of extraction electrode 2 is higher than groove.The extraction electrode 2 inserted in groove is not easily movable, accurate positioning, and assembling is simple, is conducive to being connected with intraconnection electrode 3 is stable, reduces rosin joint, dry joint, improves the reliability of Product jointing.In power semiconductor modular, extraction electrode 2 can arrange multiple according to the difference of functions of modules.
As preferably, extraction electrode 2 comprises the short straight flange of the electrode 3b for connecting intraconnection and the long straight flange for being connected external circuits, short straight flange and long straight flange are connected as a single entity, and long straight flange has one section of bending curved arc-shaped side, its short straight flange is mutually vertical L-shaped with long straight flange.Adopt the extraction electrode 2 of this structure can reduce the unnecessary stress of extraction electrode 2 pairs of semiconductor chips when expanding with heat and contract with cold, the product quality of power semiconductor modular is improved.
In step 3, intraconnection electrode 3 is placed in second stratum of mounting groove 1a, intraconnection electrode 3 comprises several electrodes 3b and connecting portion 3a, several electrodes 3b is connected with connecting portion 3a by the intercell connector 3c that both sides are at a right angle, several electrodes 3b with connecting portion 3a for axle is symmetrical between two, a right-angle side of the intercell connector 3c that connecting portion 3a is connected with its connecting portion 3a both sides forms the shape of a door and can be socketed on the extraction electrode 2 higher than groove, and the height of its second stratum equals the height placed tube core or chip 4 on electrode 3b after.
This intraconnection electrode 3 adopts pure copper material to make.The intraconnection electrode replacement filament lead-in wire using fine copper to make, achieves inside chip and extraction electrode interconnects, and its conductivity and thermal conductivity, far above filament, improve the reliability of power semiconductor modular.
In step 4, before placement tube core or chip 4, first on the electrode 3b of intraconnection electrode 3, place molybdenum sheet, then place bonding pad 7.The wettability on molybdenum sheet surface, plays an important role to adhesion strength, and wettability is better, and adhesion strength is larger, and the quality of closure is better.
In step 4, intraconnection electrode 3 can be placed multiple tube core or chip 4.The number of placing tube core or chip 4 is according to the function of semiconductor module and the power decision of module.
In step 5, the third class that insulating trip or DBC substrate 5 are placed on mounting groove 1a is positioned by third class and supports.Between base plate 6 and tube core or chip 4, place insulating trip or DBC substrate 5, base plate 6 can be made reliably to insulate with tube core or chip 4, improve reliability and the capability and performance of product.
In step 5, DBC substrate comprises copper clad patterns face and non-Copper Foil picture surface, and when placing, its copper clad patterns faces down, and is connected with tube core or chip 4 by bonding pad 7, and non-Copper Foil picture surface upward, is connected with base plate 6 by bonding pad 7.
In step 6, the 4th stratum that base plate 6 is placed on mounting groove 1a is positioned by the 4th stratum and supported.
Before the welding of this power semiconductor modular, reverse installation process changes existing packaging technology mode, and its concrete number of assembling steps is:
The support 1 made according to modular structure is placed on bottom, it has one of mounting groove 1a and faces up, first extraction electrode 2 is inserted in the groove in mounting groove 1a, the extraction pole 2a that it is connected with external circuits inserts groove down, the welding pole 2b be connected with the miscellaneous part of power semiconductor modular upward, after inserting groove, its length is higher than groove, intraconnection electrode 3 is placed again in second stratum of mounting groove 1a, the connecting portion 3a of its intraconnection electrode 3 forms the shape of a door with a right-angle side of the intercell connector 3c being connected to connecting portion 3a both sides and is just in time socketed on extraction electrode 2, the position that its intraconnection electrode 3 is connected with extraction electrode 2 is connected by bonding pad 7, tube core or chip 4 are placed on the electrode 3b of intraconnection electrode 3, its tube core or chip 4 according to the feature structures such as the common cathode of semiconductor module or common anode select negative electrode down or anode down, one side is down by bonding pad 7, molybdenum sheet is placed on the electrode 3b of intraconnection electrode 3, in the process, first place molybdenum sheet, place bonding pad 7 again, the third class of mounting groove 1a places insulating trip or DBC substrate 5, the insulating trip placed or DBC substrate 5 are connected with tube core or chip 4 just by bonding pad 7, insulating trip or DBC substrate 5 is placed between base plate 6 and tube core or chip 4, base plate 6 can be made reliably to insulate with tube core or chip 4, if select DBC substrate, be the copper clad patterns of DBC substrate faced down, be connected by bonding pad 7 with tube core or chip 4, the non-Copper Foil picture surface of DBC substrate upward, base plate 6 is placed by 4th stratum of mounting groove 1a, the insulating trip that the base plate 6 placed just in time is placed with third class or DBC substrate 5 are connected by bonding pad 7, its the every layer parts placed position respectively by support 1, support and fix, its accurate positioning, solve in existing packaging technology, first base plate 6 is placed bottom, insulating trip is placed in superposition again, the parts such as tube core, then be fixed by support 1, the problem that the accuracy of pad aligned position is between layers poor is easily caused in its fixation procedure, and present invention efficiently solves the problems referred to above, and improve quality and the production of product.
Specific embodiment described herein is only to the explanation for example of the present invention's spirit.Those skilled in the art can make various amendment or supplement or adopt similar mode to substitute to described specific embodiment, but can't depart from spirit of the present invention or surmount the scope that appended claims defines.
Although more employ the terms such as support 1, mounting groove 1a, extraction electrode 2, extraction pole 2a, welding pole 2b, intraconnection electrode 3, connecting portion 3a, electrode 3b, intercell connector 3c, tube core or chip 4, insulating trip or DBC substrate 5, base plate 6, bonding pad 7 herein, do not get rid of the possibility using other term.These terms are used to be only used to describe and explain essence of the present invention more easily; The restriction that they are construed to any one additional is all contrary with spirit of the present invention.
Claims (10)
1. reverse installation process before a power semiconductor modular welding, described power semiconductor modular comprises base plate (6), insulating trip or DBC substrate (5), tube core or chip (4), intraconnection electrode (3) and extraction electrode (2), it is characterized in that, the concrete steps of this reverse installation process are as follows:
Step one, make one and there is mounting groove (1a) and the support (1) by mounting groove (1a) parts each in power semiconductor modular being supported and fix;
Step 2, extraction electrode (2) is placed on support (1) mounting groove (1a) in and be fixed on the positioning, described extraction electrode (2) comprises extraction pole (2a) for connecting external circuits and the welding pole (2b) for being connected with miscellaneous part in power semiconductor modular, its extraction pole (2a) inserts in the mounting groove (1a) of support (1) down, and welding pole (2b) upward;
Step 3, intraconnection electrode (3) to be placed on extraction electrode (2) upper and be fixed on the positioning by support (1), and its intraconnection electrode (3) is connected with the welding pole (2b) of extraction electrode (2) by bonding pad (7);
Step 4, be placed on intraconnection electrode (3) by tube core or chip (4), tube core or chip (4) are connected with intraconnection electrode (3) with molybdenum sheet by bonding pad (7);
Step 5, insulating trip or DBC substrate (5) are placed on tube core or chip (4), and fixing by support (1) location, its insulating trip or DBC substrate (5) are connected with tube core or chip (4) by bonding pad (7);
Step 6, on insulating trip or DBC substrate (5), place base plate (6), its base plate (6) is connected with insulating trip or DBC substrate (5) by bonding pad (7), and is fixed by support (1), supports and is located.
2. reverse installation process before power semiconductor modular welding according to claim 1, it is characterized in that, in described step one, described support (1) makes according to the difference of power semiconductor modular structure, is used for supporting, fixing and positioning plate (6), insulating trip or DBC substrate (5), tube core or chip (4), intraconnection electrode (3) and extraction electrode (2).
3. reverse installation process before power semiconductor modular welding according to claim 1 and 2, it is characterized in that, in described step one, the forge piece of step type structure that the upper mounting groove (1a) arranged of described support (1) is both sides symmetry, its forge piece of step type structure has four stratum, first stratum of both sides forge piece of step type structure is connected formation groove, and four described stratum are respectively used to each parts of locating and supporting in power semiconductor modular.
4. reverse installation process before power semiconductor modular welding according to claim 3, it is characterized in that, in described step 2, described extraction electrode (2) is provided with several, described extraction electrode (2) inserts in above-mentioned groove, and the length of extraction electrode (2) is higher than groove.
5. reverse installation process before power semiconductor modular welding according to claim 1, it is characterized in that, in described step 3, described intraconnection electrode (3) is placed in the second stratum of mounting groove (1a), described intraconnection electrode (3) comprises several electrodes (3b) and connecting portion (3a), described several electrodes (3b) are connected with connecting portion (3a) by the intercell connector (3c) that both sides are at a right angle, several electrodes (3b) with connecting portion (3a) for axle is symmetrical between two, a right-angle side of the intercell connector (3c) that connecting portion (3a) is connected with its connecting portion (3a) both sides forms the shape of a door and can be socketed on the extraction electrode (2) higher than groove, the height of its second stratum equals the height placed tube core or chip (4) on electrode (3b) after.
6. reverse installation process before power semiconductor modular welding according to claim 1, it is characterized in that, in described step 4, on the electrode (3b) of intraconnection electrode (3), place molybdenum sheet at placement tube core or chip (4) front elder generation, then place bonding pad (7).
7. reverse installation process before the power semiconductor modular welding according to claim 1 or 6, is characterized in that, in described step 4, intraconnection electrode (3) can be placed multiple tube core or chip (4).
8. reverse installation process before power semiconductor modular welding according to claim 1, it is characterized in that, in described step 5, the third class that described insulating trip or DBC substrate (5) are placed on mounting groove (1a) is positioned by third class and supports.
9. reverse installation process before the power semiconductor modular welding according to claim 1 or 8, it is characterized in that, in described step 5, described DBC substrate comprises copper clad patterns face and non-Copper Foil picture surface, when placing, its copper clad patterns faces down, and is connected with tube core or chip (4) by bonding pad (7), non-Copper Foil picture surface upward, is connected with base plate (6) by bonding pad (7).
10. reverse installation process before power semiconductor modular welding according to claim 1, it is characterized in that, it is characterized in that, in described step 6, the 4th stratum that described base plate (6) is placed on mounting groove (1a) is positioned by the 4th stratum and supported.
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US6597063B1 (en) * | 1997-12-08 | 2003-07-22 | Kabushiki Kaisha Toshiba | Package for semiconductor power device and method for assembling the same |
CN102104010A (en) * | 2009-12-22 | 2011-06-22 | 陈志恭 | Module structural member capable of improving isolation voltage VISO and reducing crusting thermal resistance Rthjc |
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JPS5893358A (en) * | 1981-11-30 | 1983-06-03 | Mitsubishi Electric Corp | Semiconductor device |
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Publication number | Priority date | Publication date | Assignee | Title |
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US6597063B1 (en) * | 1997-12-08 | 2003-07-22 | Kabushiki Kaisha Toshiba | Package for semiconductor power device and method for assembling the same |
CN102104010A (en) * | 2009-12-22 | 2011-06-22 | 陈志恭 | Module structural member capable of improving isolation voltage VISO and reducing crusting thermal resistance Rthjc |
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