CN103311133A - Pre-welding inverse installation technology of power semiconductor module - Google Patents
Pre-welding inverse installation technology of power semiconductor module Download PDFInfo
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- CN103311133A CN103311133A CN2013101880112A CN201310188011A CN103311133A CN 103311133 A CN103311133 A CN 103311133A CN 2013101880112 A CN2013101880112 A CN 2013101880112A CN 201310188011 A CN201310188011 A CN 201310188011A CN 103311133 A CN103311133 A CN 103311133A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
Abstract
The invention provides a pre-welding inverse installation technology of a power semiconductor module, belonging to the technical field of semiconductor components of electrical equipment. By the adoption of the pre-welding inverse installation technology of the power semiconductor module, the problems that products manufactured by an existing technology are low in quality and high in cost are solved. The pre-welding inverse installation technology of the power semiconductor module comprises the following steps of placing a support in which an installation groove is formed on the base layer at first, placing an extraction electrode on the first layer of the installation groove, placing an intraconnection electrode on the second layer, placing a tube core or a chip on the third layer, placing an insulating strip or a DBC (Direct Bonded Copper) substrate on the fourth layer, and placing a base plate on the fifth layer, wherein components placed on all layers are positioned, supported and fixedly arranged by the support respectively. The inverse installation technology enables the production rate of the power semiconductor module to be improved, and moreover, produced products are better in quality and lower in cost.
Description
Technical field
The invention belongs to the power equipment technical field of semiconductor device, relate to the front reverse installation process of a kind of power semiconductor modular welding.
Background technology
High-power semiconductor module will weld base plate, tube core or chip, extraction electrode before encapsulation, will assemble and fix base plate, tube core or chip, extraction electrode before welding.
All be just to adopt (suitable) dress process (as shown in Figure 2) to realize both at home and abroad in the prior art, what is called is (suitable) dress process just, exactly base plate is placed on bottom 5, places tube core 3 in the base plate stack, places extraction electrode 1 in the tube core stack again.In order to make the insulation of tube core and base plate, to increase betwixt insulating trip or semi-conductive copper ceramic substrate DBC (Direct-Bond Copper) substrate 4 that covers; Weld in order to make between each layer, increase weld tabs 6,7,8,9 at each interlayer again, thereby formed nearly nine layers just (suitable) dress technique, there is following problem in this but just (suitable) dress technique, the first, fixed support is made complicated, and fixing difficulty, the dismantle difficulty almost can not be finished assembling; The second, between layers the accuracy of pad aligned position is very poor, causes the device performance consistency very poor, and defective products is high; Three, the complexity of assembling support causes packaging technology complicated, has increased built-up time, and labor productivity is low, can not realize streamline production; The 4th, extraction electrode can not directly weld with chip, thereby introduces again filament and carry out the transition connection, can not disposablely finish assembling.In sum, (suitable) dress method just before the power semiconductor modular welding can not solve the batch production problem of power semiconductor modular well, can not control well quality and the product cost of product.
Summary of the invention
The objective of the invention is to have the problems referred to above for existing technology, proposed the front reverse installation process of a kind of power semiconductor modular welding, this reverse installation process can improve the productivity ratio of power semiconductor modular, and the product quality of producing is better, and cost is lower.
Purpose of the present invention can realize by following technical proposal: reverse installation process before a kind of power semiconductor modular welding, described power semiconductor modular comprises base plate, insulating trip or DBC substrate, tube core or chip, intraconnection electrode and extraction electrode, it is characterized in that, the concrete steps of this reverse installation process are as follows:
Step 4, tube core or chip are placed on the intraconnection electrode, tube core or chip link to each other with the intraconnection electrode with molybdenum sheet by bonding pad;
Step 5, insulating trip or DBC substrate are placed on tube core or the chip, and fixing by the support location, and its insulating trip or DBC substrate link to each other with tube core or chip by bonding pad;
Reverse installation process has changed existing packaging technology mode before this power semiconductor modular welding, adopt first at the bottom placing rack, its support is provided with mounting groove, ground floor at mounting groove is placed extraction electrode, the second layer is placed the intraconnection electrode, place tube core or chip for the 3rd layer, the 4th layer prevents insulating trip or DBC substrate, layer 5 is placed base plate, the parts of every layer of placement position by support respectively, support and fixing, its accurate positioning has solved in the existing packaging technology, first base plate is placed bottom, insulating trip is placed in stack again, then the parts such as tube core are fixed by support, easily cause the between layers relatively poor problem of accuracy of pad aligned position in its fixation procedure, and the present invention has solved the problems referred to above effectively, and has improved quality and the production of product.
Before the welding of above-mentioned power semiconductor modular in the reverse installation process, in described step 1, described support is made according to the difference of power semiconductor modular structure, is used for supporting, fixing and positioning plate, insulating trip or DBC substrate, tube core or chip, intraconnection electrode and extraction electrode.This support can be dismantled after the power semiconductor modular welding finishes, in order to take out the power semiconductor modular after the welding.The material of making this support is a kind of not varying with temperature and the alloy that is out of shape, and profile is cuboid, and the geomery of inner die cavity is according to the power semiconductor modular structure fabrication of correspondence.
Before the welding of above-mentioned power semiconductor modular in the reverse installation process, in described step 1, the mounting groove that arranges on the described support is the notch cuttype structure of both sides symmetry, its notch cuttype structure has four stratum, the first stratum of both sides notch cuttype structure is connected and forms a groove, and described four stratum are respectively applied to locate and support each parts in the power semiconductor modular.
In the reverse installation process, in described step 2, described extraction electrode is provided with several before above-mentioned power semiconductor modular welding, and described extraction electrode inserts in the above-mentioned groove, and the length of extraction electrode is higher than groove.The extraction electrode that inserts in the groove is difficult for activity, accurate positioning, and assembling is simple, is conducive to be connected with the intraconnection electrode is stable, reduces rosin joint, dry joint, the reliability of raising Product jointing.Extraction electrode can arrange a plurality of according to the difference of functions of modules in power semiconductor modular.
Before the welding of above-mentioned power semiconductor modular in the reverse installation process, in described step 3, described intraconnection electrode is placed in the second stratum of mounting groove, described intraconnection electrode comprises several electrodes and connecting portion, described several electrodes are connected with connecting portion by the rectangular intercell connector in both sides, several electrodes are symmetrical in twos take connecting portion as axle, a right-angle side of the intercell connector that connecting portion is connected with its connecting portion both sides forms the shape of a door and can be socketed on the extraction electrode that is higher than groove, and the height of its second stratum equals the height after electrode has been placed tube core or chip.
Before the welding of above-mentioned power semiconductor modular in the reverse installation process, in described step 4, place molybdenum sheet at the electrode of intraconnection electrode first before placing tube core or chip, place after placing again bonding pad.The wettability on molybdenum sheet surface plays an important role to adhesion strength, and wettability is better, and adhesion strength is larger, and the quality of closure is better.
Before above-mentioned power semiconductor modular welding, in the reverse installation process, in described step 4, on the intraconnection electrode, can place a plurality of tube cores or chip.The number of placing tube core or chip is according to the power decision of the function of semiconductor module and module.
Before the welding of above-mentioned power semiconductor modular in the reverse installation process, in described step 5, described insulating trip or DBC substrate are placed on the three-layered of mounting groove and by three-layered and position and support.Between base plate and tube core or chip, place insulating trip or DBC substrate, can so that base plate and tube core or chip insulate reliably, improve reliability and the capability and performance of product.
Before the welding of above-mentioned power semiconductor modular in the reverse installation process, in described step 5, described DBC substrate comprises copper clad patterns face and non-copper clad patterns face, when placing, its copper clad patterns faces down, link to each other with tube core or chip by bonding pad, non-copper clad patterns faces up, and links to each other with base plate by bonding pad.
Before the welding of above-mentioned power semiconductor modular in the reverse installation process, in described step 6, described base plate is placed on the quadravalence layer of mounting groove and by the quadravalence layer and positions and support.
Compared with prior art, reverse installation process has the following advantages before the welding of this power semiconductor modular:
1, formal dress technique is fully opposite in packaging technology step of the present invention and the prior art, by special support the individual parts in the power semiconductor modular are positioned, support and fix, realize disposable assembling, improved the precision of location, so that the properties of product consistency is very good; Adopt technology of the present invention so that simple for assembly process, whole process flow for assembling can disposablely be finished, and is conducive to industrialized mass.
2, by the present invention power semiconductor modular is assembled after, can realize disposable welding, improved the q﹠r of product.
Description of drawings
Fig. 1 is technique assembly drawing of the present invention.
Fig. 2 is the technique assembly drawing of prior art.
Among the figure, 1, support; 1a, mounting groove; 2, extraction electrode; 2a, extraction pole; 2b, the welding utmost point; 3, intraconnection electrode; 3a, connecting portion; 3b, electrode; 3c, intercell connector; 4, tube core or chip; 5, insulating trip or DBC substrate; 6, base plate; 7, bonding pad.
Embodiment
Below be specific embodiments of the invention and by reference to the accompanying drawings, technical scheme of the present invention is further described, but the present invention be not limited to these embodiment.
As shown in Figure 1, reverse installation process before the welding of this power semiconductor modular, its power semiconductor modular comprises base plate 6, insulating trip or DBC substrate 5, tube core or chip 4, intraconnection electrode 3 and extraction electrode 2, and the concrete steps of this reverse installation process are as follows: step 1, support 1 that has mounting groove 1a and by mounting groove 1a each parts in the power semiconductor modular are supported and fix of making; Step 2, extraction electrode 2 is placed in the mounting groove 1a of support 1 and positions fixing, extraction electrode 2 comprises for the extraction pole 2a and the welding utmost point 2b that is connected being connected with the power semiconductor modular miscellaneous part that connect external circuits, its extraction pole 2a inserts among the mounting groove 1a of support 1 down, and welding utmost point 2b up; Step 3, be placed on intraconnection electrode 3 on the extraction electrode 2 and positioned fixingly by support 1, its intraconnection electrode 3 links to each other with the welding utmost point 2b of extraction electrode 2 by bonding pad 7; Step 4, tube core or chip 4 are placed on the intraconnection electrode 3, tube core or chip 4 link to each other with intraconnection electrode 3 with molybdenum sheet by bonding pad 7; Step 5, insulating trip or DBC substrate 5 are placed on tube core or the chip 4, and fixing by support 1 location, and its insulating trip or DBC substrate 5 link to each other with tube core or chip 4 by bonding pad 7; Step 6, place base plates 6 at insulating trip or DBC substrate 5, its base plate 6 joins by bonding pad 7 and insulating trip or DBC substrate 5, and is fixed, supports and located by support 1.
Specifically, in step 1, the structure of support 1 is according to the difference of power semiconductor modular structure and difference, the structure of the power semiconductor modular of assembling is selected special support 1 as required, can support base plate 6, insulating trip or DBC substrate 5, tube core or chip 4, intraconnection electrode 3 and extraction electrode 2, fix and the location by special support 1.This support 1 can movable, dismounting after power semiconductor modular welding finishes, in order to take out the power semiconductor modular after the welding.The material of making this support is a kind of not varying with temperature and the alloy that is out of shape, and profile is cuboid, and the geomery of inner die cavity is according to the power semiconductor modular structure fabrication of correspondence.
In the present embodiment, this support is a kind of support that is applicable to high-power Ultrafast recovery diode module, support 1 inside of this making is provided with mounting groove 1a, this mounting groove 1a is the notch cuttype structure of both sides symmetry, its notch cuttype structure has four stratum, the first stratum of both sides notch cuttype structure is connected and forms a groove, four stratum in the mounting groove 1a are respectively applied to locate and support each parts in the power semiconductor modular, the groove that its first stratum forms is used for placing extraction electrode 2, after extraction electrode 2 was put into groove, its length was higher than the height of groove; The second stratum is used for placing intraconnection electrode 3, and the height of its second stratum equals the height after intraconnection electrode 3 has been placed tube core or chip 4; Three-layered is used for placing insulating trip or DBC substrate 5, and the length of its three-layered is slightly larger than the length of insulating trip or DBC substrate 5, and height equates substantially with the thickness of insulating trip or DBC substrate 5; The 4th layer is used for placing base plate 6, and its length of the 4th layer is slightly larger than the length of base plate 6, and height equates substantially with the thickness of base plate 6.
In step 2, extraction electrode 2 is provided with several, and extraction electrode 2 inserts in the groove, and the length of extraction electrode 2 is higher than groove.The extraction electrode 2 that inserts in the groove is difficult for activity, accurate positioning, and assembling is simple, is conducive to and 3 stable connections of intraconnection electrode, reduces rosin joint, dry joint, the reliability of raising Product jointing.Extraction electrode 2 can arrange a plurality of according to the difference of functions of modules in power semiconductor modular.
As preferably, extraction electrode 2 comprises the short straight flange and the long straight flange that is connected connecting external circuits for the electrode 3b that connects intraconnection, short straight flange is connected as a single entity with long straight flange, has one section arc-shaped side that bending is curved on the long straight flange, and its short straight flange is mutually vertical L-shaped with long straight flange.Adopt the extraction electrode 2 of this structure can when expanding with heat and contract with cold, reduce the unnecessary stress of 2 pairs of semiconductor chips of extraction electrode, so that the product quality of power semiconductor modular improves.
In the step 3, intraconnection electrode 3 is placed in the second stratum of mounting groove 1a, intraconnection electrode 3 comprises several electrodes 3b and connecting portion 3a, several electrodes 3b is connected with connecting portion 3a by the rectangular intercell connector 3c in both sides, several electrodes 3b is symmetrical in twos take connecting portion 3a as axle, the right-angle side of the intercell connector 3c that connecting portion 3a is connected with its connecting portion 3a both sides forms the shape of a door and can be socketed on the extraction electrode 2 that is higher than groove, and the height of its second stratum equals the height after electrode 3b has placed tube core or chip 4.
This intraconnection electrode 3 adopts pure copper material to make.The intraconnection electrode that uses fine copper to make replaces the filament lead-in wire, has realized the interconnection of inside chip and extraction electrode, and its conductivity and thermal conductivity have improved the reliability of power semiconductor modular far above filament.
In step 4, after placing molybdenum sheet at the electrode 3b of intraconnection electrode 3, place bonding pad 7 again, placement tube core or chip 4 front elder generations place.The wettability on molybdenum sheet surface plays an important role to adhesion strength, and wettability is better, and adhesion strength is larger, and the quality of closure is better.
In step 4, on intraconnection electrode 3, can place a plurality of tube cores or chip 4.The number of placing tube core or chip 4 is according to the power decision of the function of semiconductor module and module.
In step 5, insulating trip or DBC substrate 5 are placed on the three-layered of mounting groove 1a and by three-layered and position and support.Between base plate 6 and tube core or chip 4, place insulating trip or DBC substrate 5, can so that base plate 6 insulate reliably with tube core or chip 4, improve reliability and the capability and performance of product.
In step 5, the DBC substrate comprises copper clad patterns face and non-copper clad patterns face, and when placing, its copper clad patterns faces down, and links to each other with tube core or chip 4 by bonding pad 7, and non-copper clad patterns faces up, and links to each other with base plate 6 by bonding pad 7.
In step 6, base plate 6 is placed on the quadravalence layer of mounting groove 1a and by the quadravalence layer and positions and support.
Reverse installation process has changed existing packaging technology mode before this power semiconductor modular welding, and its concrete number of assembling steps is:
To be placed on bottom according to the support 1 that modular structure is made, it has one of mounting groove 1a and faces up, in the groove that first extraction electrode 2 is inserted among the mounting groove 1a, the extraction pole 2a that it is connected with external circuits inserts groove down, the welding utmost point 2b that is connected with the miscellaneous part of power semiconductor modular up, after inserting groove, its length is higher than groove, place intraconnection electrode 3 in the second stratum of mounting groove 1a again, the connecting portion 3a of its intraconnection electrode 3 also just in time is socketed on the extraction electrode 2 with the shape of the door of a right-angle side formation of the intercell connector 3c that is connected to connecting portion 3a both sides, the position that its intraconnection electrode 3 is connected with extraction electrode 2 connects by bonding pad 7, tube core or chip 4 are placed on the electrode 3b of intraconnection electrode 3, its tube core or chip 4 select negative electrode down according to feature structures such as the common cathode of semiconductor module or common anodes or anode down, one side down is by bonding pad 7, molybdenum sheet is placed on the electrode 3b of intraconnection electrode 3, in this process, place first molybdenum sheet, place again bonding pad 7; The three-layered of mounting groove 1a is placed insulating trip or DBC substrate 5, the insulating trip of placing or DBC substrate 5 just in time are connected with tube core or chip 4 by bonding pad 7, between base plate 6 and tube core or chip 4, place insulating trip or DBC substrate 5, can so that base plate 6 insulate reliably with tube core or chip 4, if select the DBC substrate, be that copper clad patterns with the DBC substrate faces down, link to each other with tube core or chip 4 by bonding pad 7, the non-copper clad patterns of DBC substrate faces up; The quadravalence layer of mounting groove 1a is placed base plate 6, the base plate 6 of placing just in time is connected by bonding pad 7 with insulating trip or the DBC substrate 5 that three-layered is placed, the parts of its every layer placement position by support 1 respectively, support and fixing, its accurate positioning, solved in the existing packaging technology, first base plate 6 is placed bottom, insulating trip is placed in stack again, the parts such as tube core, then be fixed by support 1, easily cause the between layers relatively poor problem of accuracy of pad aligned position in its fixation procedure, and the present invention has solved the problems referred to above effectively, and has improved quality and the production of product.
Specific embodiment described herein only is to the explanation for example of the present invention's spirit.Those skilled in the art can make various modifications or replenish or adopt similar mode to substitute described specific embodiment, but can't depart from spirit of the present invention or surmount the defined scope of appended claims.
Although this paper has more used the terms such as support 1, mounting groove 1a, extraction electrode 2, extraction pole 2a, welding utmost point 2b, intraconnection electrode 3, connecting portion 3a, electrode 3b, intercell connector 3c, tube core or chip 4, insulating trip or DBC substrate 5, base plate 6, bonding pad 7, do not get rid of the possibility of using other term.Using these terms only is in order to describe more easily and explain essence of the present invention; They are construed to any additional restriction all is contrary with spirit of the present invention.
Claims (10)
1. reverse installation process before a power semiconductor modular welds, described power semiconductor modular comprises base plate (6), insulating trip or DBC substrate (5), tube core or chip (4), intraconnection electrode (3) and extraction electrode (2), it is characterized in that, the concrete steps of this reverse installation process are as follows:
The support (1) that step 1, one of making have mounting groove (1a) and by mounting groove (1a) each parts in the power semiconductor modular supported and fix;
Step 2, be placed on extraction electrode (2) in the mounting groove (1a) of support (1) and position fixing, described extraction electrode (2) comprises for the extraction pole (2a) and the welding utmost point (2b) that is connected being connected with the power semiconductor modular miscellaneous part that connect external circuits, its extraction pole (2a) inserts in the mounting groove (1a) of support (1) down, and the welding utmost point (2b) up;
Step 3, that intraconnection electrode (3) is placed on extraction electrode (2) is upper and positioned fixingly by support (1), and its intraconnection electrode (3) links to each other with the welding utmost point (2b) of extraction electrode (2) by bonding pad (7);
Step 4, tube core or chip (4) are placed on the intraconnection electrode (3), tube core or chip (4) link to each other with intraconnection electrode (3) with molybdenum sheet by bonding pad (7);
Step 5, insulating trip or DBC substrate (5) are placed on tube core or the chip (4), and fixing by support (1) location, and its insulating trip or DBC substrate (5) link to each other with tube core or chip (4) by bonding pad (7);
Step 6, place base plate (6) at insulating trip or DBC substrate (5), its base plate (6) joins by bonding pad (7) and insulating trip or DBC substrate (5), and is fixed, supports and located by support (1).
2. reverse installation process before power semiconductor modular according to claim 1 welds, it is characterized in that, in described step 1, described support (1) is made according to the difference of power semiconductor modular structure, is used for supporting, fixing and positioning plate (6), insulating trip or DBC substrate (5), tube core or chip (4), intraconnection electrode (3) and extraction electrode (2).
3. reverse installation process before power semiconductor modular according to claim 1 and 2 welds, it is characterized in that, in described step 1, the upper mounting groove (1a) that arranges of described support (1) is the notch cuttype structure of both sides symmetry, its notch cuttype structure has four stratum, the first stratum of both sides notch cuttype structure is connected and forms a groove, and described four stratum are respectively applied to locate and support each parts in the power semiconductor modular.
4. reverse installation process before power semiconductor modular according to claim 3 welds, it is characterized in that, in described step 2, described extraction electrode (2) is provided with several, described extraction electrode (2) inserts in the above-mentioned groove, and the length of extraction electrode (2) is higher than groove.
5. reverse installation process before power semiconductor modular according to claim 1 welds, it is characterized in that, in described step 3, described intraconnection electrode (3) is placed in the second stratum of mounting groove (1a), described intraconnection electrode (3) comprises several electrodes (3b) and connecting portion (3a), described several electrodes (3b) are connected with connecting portion (3a) by the rectangular intercell connectors in both sides (3c), several electrodes (3b) are symmetrical in twos take connecting portion (3a) as axle, a right-angle side of the intercell connector (3c) that connecting portion (3a) is connected with its connecting portion (3a) both sides forms the shape of a door and can be socketed on the extraction electrode (2) that is higher than groove, and the height of its second stratum equals the height after electrode (3b) has been placed tube core or chip (4).
6. reverse installation process before power semiconductor modular according to claim 1 welds, it is characterized in that, in described step 4, after placing tube core or the front elder generation of chip (4) electrode (3b) the placement molybdenum sheet in intraconnection electrode (3), placing again bonding pad (7), place.
7. reverse installation process according to claim 1 or before the welding of 6 described power semiconductor modulars is characterized in that, in described step 4, can place a plurality of tube cores or chip (4) on intraconnection electrode (3).
8. reverse installation process before power semiconductor modular according to claim 1 welds, it is characterized in that, in described step 5, described insulating trip or DBC substrate (5) are placed on the three-layered of mounting groove (1a) and by three-layered and position and support.
9. reverse installation process according to claim 1 or before the welding of 8 described power semiconductor modulars, it is characterized in that, in described step 5, described DBC substrate comprises copper clad patterns face and non-copper clad patterns face, when placing, its copper clad patterns faces down, and links to each other with tube core or chip (4) by bonding pad (7), non-copper clad patterns faces up, and links to each other with base plate (6) by bonding pad (7).
10. reverse installation process before power semiconductor modular according to claim 1 welds, it is characterized in that, it is characterized in that, in described step 6, described base plate (6) is placed on the quadravalence layer of mounting groove (1a) and by the quadravalence layer and positions and support.
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JPS5893358A (en) * | 1981-11-30 | 1983-06-03 | Mitsubishi Electric Corp | Semiconductor device |
US6597063B1 (en) * | 1997-12-08 | 2003-07-22 | Kabushiki Kaisha Toshiba | Package for semiconductor power device and method for assembling the same |
CN102104010A (en) * | 2009-12-22 | 2011-06-22 | 陈志恭 | Module structural member capable of improving isolation voltage VISO and reducing crusting thermal resistance Rthjc |
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