CN103199434A - Method achieving semiconductor laser coherent polarization synthesis - Google Patents
Method achieving semiconductor laser coherent polarization synthesis Download PDFInfo
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- CN103199434A CN103199434A CN2013100665848A CN201310066584A CN103199434A CN 103199434 A CN103199434 A CN 103199434A CN 2013100665848 A CN2013100665848 A CN 2013100665848A CN 201310066584 A CN201310066584 A CN 201310066584A CN 103199434 A CN103199434 A CN 103199434A
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Abstract
The invention relates to a method achieving semiconductor laser coherent polarization synthesis. The method achieving the semiconductor laser coherent polarization synthesis comprises the following steps: seed light sent from a primary laser device is divided into multiple paths after the seed light passes through a dispersion prism, the multiple paths of light are respectively injected into a plurality of lasers to achieve phase locking of an auxiliary laser device; the laser emitted from each laser device carries out polarization synthesis in a polarization beam splitter with laser which is emitted from another laser, or polarization synthesized or under the effect of a half wavelength plate. The method achieving the semiconductor laser coherent polarization synthesis is used for enabling the number of the laser devices participating in the polarization beam combination to be determined by a power sum and a power of each laser device according to requirement. Ordinary polarization synthesis can only combine two paths of laser devices, Due to the modulation of the phase of the laser devices, the method achieving the semiconductor laser coherent polarization synthesis can expand the number participating in the beam combination to an infinite number, and is very flexible.
Description
Technical field
The present invention relates to semiconductor laser and close the light source beam field, particularly a kind of method that realizes that the semiconductor laser cross polarization is synthetic.
Background technology
Volume is little, in light weight, reliability is high, the electro-optical efficiency advantages of higher because semiconductor laser has, make its core light source and support technology of not only becoming fields such as laser processing, laser medicine, laser display, laser monitor, laser ranging, laser guidance, laser fuze, also obtain more and more noticeable application prospect in fields such as laser radar, laser gas detection, laser rangings.The application of semiconductor laser has greatly reduced the complexity of machine system in these application, and increases substantially its reliability.But need the fine parameters (vibration, rotation, precession, nutating etc.) of measurement target in application such as laser radar, active probe identification, requiring light source must be coherent light.And common high power semiconductor lasers runs on saturation mode usually, is multimode output, and the coherence is relatively poor.The semiconductor laser that can realize the single longitudinal mode running has coherence preferably, coherence length is long, and (coherence length is the important indicator of coherent source, mainly determined by the laser frequency live width), can reach tens kilometers, but power output is in hundred milliwatt magnitudes, is difficult to satisfy in the above-mentioned application requirement to high-power output.
The relevant synthetic technology of semiconductor laser is the effective way that obtains high-power coherent source, typically refer to one group of laser cell and make by certain means that frequency is identical each other, polarization is consistent, phase place forms fixing association, thereby make whole light field present the phenomenon of coherent superposition.According to the relevant synthetic scheme of the semiconductor laser of having reported at present, mainly contain following several form: (1) adopts evanescent wave, and self-organizing realizes relevant synthetic between unit such as leakage waves.Mainly be rely on stripping pattern (revealing ripple, evanescent wave etc.) between the unit in waveguide, form adaptive stablize phase-locked, thereby realize the relevant synthetic of light beam between the unit.This method depends on the frequency effect of narrowing of waveguide and laserresonator coupled system and the selection locking action of phase place consumingly, and is relatively stricter to the structural requirement of laser.(2) adopt the exocoel Phase Lock Technique to realize the relevant bundle that closes.Exocoel is phase-locked mainly to be to form new resonant cavity outside semiconductor laser array, reflex by diffraction effect and external cavity mirror makes fully coupling mutually between each luminescence unit, lock the phase place of each lasing fluorescence unit, thereby make the relevant output of semiconductor laser.(3) adopt principal and subordinate's injection technique, realize relevant synthetic.Principal and subordinate's injection technique is that the semiconductor laser (main laser) with a low-power, narrow linewidth is injected into the ordinary semiconductor laser array (from laser) as seed source, under certain condition, be suppressed and set up stable vibration injecting light frequency from the free operation mode of laser, thereby make each unit and the running of main laser same frequency in the array, reach phase-locked relevant purpose.Because the frequency spectrum of each luminous point is inconsistent, make the frequency spectrum of the coherent laser of acquisition can't be compressed to single longitudinal mode in (2) (3), live width is wideer.Because such scheme exists that laser structure is special, complicated process of preparation, close shortcomings such as the Shu Danyuan frequency spectrum is variant, cause relevant synthesized source being difficult to meet the demands simultaneously aspect frequency spectrum live width and the power output two, this also becomes the major technique bottleneck that semiconductor laser is used in fields such as laser radar, active probe identification, laser gas detections.
Summary of the invention
In order to solve the relevant synthesized source of existing semiconductor laser in the present situation that is difficult to satisfy simultaneously application requirements aspect frequency spectrum live width and the power output two, the invention provides a kind of synthetic method of semiconductor laser cross polarization that can realize high power, narrow linewidth.
Technical scheme of the present invention is specific as follows:
Realize the method that the semiconductor laser cross polarization is synthetic, may further comprise the steps:
Step I: seed light that main laser sends is divided into multichannel through behind the Amici prism, inject respectively a plurality of from laser to realize the phase place locking from laser; Each is from the laser that laser is launched, and is that all launch from laser with another one or synthetic through polarization, and through the laser of half-wave plate effect, it is synthetic to carry out polarization in the polarization beam cementing prism;
Step I i: the synthetic light beam after photodetector is synthetic to polarization is monitored in real time, then signal is passed to the phase control module; Described phase control module demodulates the phase error of two-beam, thereby and control signal is fed back to phase-modulator each light beam that sends from laser is carried out phase place modulation, the phase difference of the two-way light beam that the participation polarization is synthetic is controlled at the integral multiple of π and is remained linearly polarized light, close bundle thereby continue to carry out polarization with next road light beam, realize that cross polarization is synthetic.
In technique scheme, all master and slave lasers are all fixed at grade.
In technique scheme, also be separately installed with the collimating mirror that reduces laser divergence angle, collimates before the master and slave laser.
In technique scheme, after the seed light that described main laser sends is divided into multichannel through Amici prism, inject a plurality of from laser by the effect of completely reflecting mirror and reflector plate; Described completely reflecting mirror is reflectivity near 100% reflector plate or reflecting prism.
In technique scheme, after the seed light that described main laser sends is divided into multichannel through Amici prism, inject a plurality of from laser by the effect of completely reflecting mirror and reflector plate; Described reflector plate is the parallel flat with certain reflectivity, reflectance value from 1% to 50%.
In technique scheme, described front facet from laser is coated with reflectivity at the anti-reflection film more than 99%, has high injection rate to guarantee seed light.
In technique scheme, employed phase control module comprises phase-control circuit, lock-in amplifier, signal generator.
In technique scheme, described phase-modulator is lithium niobate (LiNbO
3) phase-modulator.
In technique scheme, described a plurality of quantity from laser are 4.
The synthetic method of realization semiconductor laser cross polarization of the present invention has following advantage:
The method that realization semiconductor laser cross polarization of the present invention is synthetic, to be concerned with to synthesize with the polarization synthetic technology and combine, mode by principal and subordinate's injection phase-locking makes many single transverse mode semiconductor lasers satisfy coherent condition, by active phase modulation the phase place of each road light beam is controlled, the method of closing bundle by polarization realizes the relevant synthetic of multichannel light beam, can obtain the coherent source of high power, narrow linewidth.This technology does not have the special construction requirement to laser self, can realize the relevant synthetic of numerous unit in theory, is a kind of very promising relevant synthetic technology.
The method that realization semiconductor laser cross polarization of the present invention is synthetic, the quantity of laser can be as required the laser gross power and the power of single laser determine; Common polarization is synthetic can only be synthetic with the two-way laser, and the present invention modulates by the phase place to laser, the quantity of closing the bundle laser can be expanded to unlimited many, very flexible.
Description of drawings
Fig. 1 is the structural representation of using the semiconductor laser light resource of the synthetic method of realization semiconductor laser cross polarization of the present invention.
Embodiment
Invention thought of the present invention is: the semiconductor laser light resource of using the synthetic method of realization semiconductor laser cross polarization of the present invention, it comprises a single-frequency semiconductor laser as main laser, and the identical single transverse mode semiconductor laser of a plurality of same wavelength and structure is as from laser; All lasers all are fixed on same plane, and are flapped toward by figure and arrange.Be coated with anti-reflection film from the laser front facet, transmitance is more than 99%.The light that all principal and subordinate's lasers send has the very little angle of divergence by behind the collimating mirror.Seed light that main laser sends is that 50% Amici prism repeatedly is divided into multichannel with the seed light beam of constant power after the light splitting through the light splitting rate, and by completely reflecting mirror and reflector plate (reflectivity is 10%) thus being respectively injected many realizes phase places locking from laser from laser.Add the one-way transmission that optical isolator guarantees seed light in the middle of principal and subordinate's laser.After being locked by phase place from laser, emission and main laser have the laser beam of same frequency, identical direction of vibration.90% light beam transmission is gone out behind the light beam process reflector plate.By the polarization beam cementing prism two-way light beam being carried out polarization synthesizes, use photodetector that synthetic light beam is monitored in real time, signal is passed to phase-control circuit, and phase-control circuit demodulates the phase error of two-beam, and control signal is fed back to lithium niobate (LiNbO
3) thereby phase-modulator carries out phase place modulation to each light beam that sends from laser, the phase difference of the two-way light beam that the participation polarization is synthetic is controlled at the integral multiple of π and is remained linearly polarized light, thereby continue to carry out polarization with next road light beam and close bundle, obtain the semiconductor laser light resource based on the cross polarization synthetic technology, realize the method that the semiconductor laser cross polarization is synthetic.
The the present invention of embodiment who provides below in conjunction with accompanying drawing is described in further detail.
Fig. 1 has shown a kind of embodiment of the method that realization semiconductor laser cross polarization of the present invention is synthetic.With reference to Fig. 1, use the semiconductor laser light resource of the synthetic method of realization semiconductor laser cross polarization of the present invention, comprise that main laser 1,4 are 50% Amici prism 5, completely reflecting mirror 6, reflector plate 7, phase control module 8, phase-modulator 9, photodetector 10, polarization beam cementing prism 11, half-wave plate 12 from laser 2, collimating mirror 3, optical isolator 4, light splitting rate.Wherein all lasers all are fixed in the same plane.Use that employed phase control module 8 comprises phase-control circuit, lock-in amplifier, signal generator in the semiconductor laser light resource of the synthetic method of realization semiconductor laser cross polarization of the present invention, phase-modulator uses the lithium niobate phase modulator that can be used in the free light path.
Use in the semiconductor laser light resource of the synthetic method of realization semiconductor laser cross polarization of the present invention, by six accurate adjustment racks and ultraviolet glue, collimating mirror 3 is installed in face of the chamber of each laser, make laser beam obtain collimation, collimating mirror also can be supported by mechanical microscope base, glues together collimating mirror and mechanical microscope base fixing with ultraviolet glue.Debuging in the process of collimating mirror, whether the far-field spot position that needs to check all lasers is sustained height in the horizontal direction.
Use in the semiconductor laser light resource of the synthetic method of realization semiconductor laser cross polarization of the present invention, Amici prism 5 is that the inclined-plane with triangular prism plates spectro-film, and the inclined-plane gummed with two triangular prisms forms then.Completely reflecting mirror 6 is coated with highly reflecting films on the surface, and reflector plate is being coated with reflectivity at 10% spectro-film in one side, and another surface is coated with anti-reflection film, and the base material of all optical elements is and melts quartz.Adjust by six-axial adjustment frame and suitable clamp clamps optical element, make it play light splitting and reflex to light beam, reach designing requirement, adjust the back and fix with ultraviolet glue or mechanical means.
Use the synthetic method of realization semiconductor laser cross polarization of the present invention and carry out polarization when closing bundle, the light that all lasers send collimates through collimating mirror 3, the seed light that main laser 1 sends is divided into four the tunnel through behind the Amici prism 5, thereby injects four phase place lockings from the laser realization from laser respectively by the effect of completely reflecting mirror 6 and reflector plate 7; The light beam from laser emission and main laser same frequency after the phase place locking, by transmission behind the reflector plate, light beam after the transmission carries out carrying out polarization by polarization beam cementing prism 11 successively and synthesizes, half-wave plate 12 is used for adjusting the polarization direction of light beam, use 10 pairs of synthetic light beams of photodetector to monitor in real time, signal is passed to phase control module 8, the phase control module demodulates the phase error of two-beam, and carry out phase place by 9 pairs of each road light beams of phase-modulator and modulate, the phase difference of the two-way light beam that the participation polarization is synthetic is controlled at the integral multiple of π and is remained linearly polarized light, close bundle thereby continue to carry out polarization with next road light beam, realize that cross polarization is synthetic.
Specifically:
At first, the laser that first of the top sends from laser 2 is through passing through the effect of first half-wave plate 12 again, through after the mirror reflects behind first phase-modulator 9, incide in first polarization beam cementing prism 11, carry out polarization with the laser that sends from laser 2 by second and close bundle.
Then, after the process polarization closes the effect of laser through second half-wave plate 12 of bundle, incide in second polarization beam cementing prism 11, carry out polarization with the laser that sends from laser 2 by the 3rd and close bundle.
At last, after the process polarization closes the effect of laser through the 3rd half-wave plate 12 of bundle, incide in the 3rd the polarization beam cementing prism 11, carry out polarization with the laser that sends from laser 2 by the 4th and close bundle.
The laser that each sends from laser 2 all passes through phase-modulator 9 before closing bundle and carries out the phase place modulation carrying out polarization.
In other embodiment, being used for carrying out the quantity from laser that polarization closes bundle can also be two or 5,6 or more, close Shu Yuanli and close the bundle process all with above-mentioned embodiment in identical, repeat no more here.
The method that realization semiconductor laser cross polarization of the present invention is synthetic, to be concerned with to synthesize with the polarization synthetic technology and combine, mode by principal and subordinate's injection phase-locking makes many single transverse mode semiconductor lasers satisfy coherent condition, by active phase modulation the phase place of each road light beam is controlled, the method of closing bundle by polarization realizes the relevant synthetic of multichannel light beam, can obtain the coherent source of high power, narrow linewidth.This technology does not have the special construction requirement to laser self, can realize the relevant synthetic of numerous unit in theory, is a kind of very promising relevant synthetic technology.
The method that realization semiconductor laser cross polarization of the present invention is synthetic, the quantity of laser can be as required the laser gross power and the power of single laser determine; Common polarization is synthetic can only be synthetic with the two-way laser, and the present invention modulates by the phase place to laser, the quantity of closing the bundle laser can be expanded to unlimited many, very flexible.
Obviously, above-described embodiment only is for example clearly is described, and is not the restriction to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here need not also can't give all execution modes exhaustive.And the apparent variation of being extended out thus or change still are among the protection range of the invention.
Claims (9)
1. realize the method that the semiconductor laser cross polarization is synthetic, it is characterized in that, may further comprise the steps:
Step I: seed light that main laser (1) sends is divided into multichannel after through Amici prism (5), inject respectively a plurality of from laser (2) to realize the phase place locking from laser (2); The laser that each is launched from laser (2), that all launch from laser (2) with another one or synthetic through polarization, through the laser of half-wave plate (12) effect, it is synthetic to carry out polarization in polarization beam cementing prism (11);
Step I i: the synthetic light beam after photodetector (10) is synthetic to polarization is monitored in real time, then signal is passed to phase control module (8); Described phase control module (8) demodulates the phase error of two-beam, and control signal fed back to phase-modulator (9) thus each light beam that sends from laser (2) is carried out the phase place modulation, the phase difference of the two-way light beam that the participation polarization is synthetic is controlled at the integral multiple of π and is remained linearly polarized light, close bundle thereby continue to carry out polarization with next road light beam, realize that cross polarization is synthetic.
2. method according to claim 1 is characterized in that, all master and slave lasers are all fixed at grade.
3. method according to claim 1 is characterized in that, also is separately installed with the collimating mirror (3) that reduces laser divergence angle, collimates before the master and slave laser.
4. method according to claim 1 is characterized in that, the seed light that described main laser (1) sends is injected a plurality of from laser (2) by the effect of completely reflecting mirror (6) and reflector plate (7) after being divided into multichannel through Amici prism (5); Described completely reflecting mirror (6) for reflectivity near 100% reflector plate or reflecting prism.
5. method according to claim 1 is characterized in that, the seed light that described main laser (1) sends is injected a plurality of from laser (2) by the effect of completely reflecting mirror (6) and reflector plate (7) after being divided into multichannel through Amici prism (5); Described reflector plate (7) is for having the parallel flat of certain reflectivity, reflectance value from 1% to 50%.
6. method according to claim 1 is characterized in that, described front facet from laser (2) is coated with reflectivity at the anti-reflection film more than 99%, has high injection rate to guarantee seed light.
7. method according to claim 1 is characterized in that, employed phase control module (8) comprises phase-control circuit, lock-in amplifier, signal generator.
8. method according to claim 1 is characterized in that, described phase-modulator (9) is lithium niobate (LiNbO
3) phase-modulator.
9. according to the method described in any one of the claim 1-8, it is characterized in that described a plurality of quantity from laser (2) are 4.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105486483A (en) * | 2016-01-11 | 2016-04-13 | 北京中科思远光电科技有限公司 | Spatial and temporal multiplexing technology-based laser beam combining method |
| CN107748057A (en) * | 2017-10-30 | 2018-03-02 | 中国人民解放军国防科技大学 | System and method for evaluating influence of thermal lens effect on synthesis efficiency of coherent polarization synthesis system |
| CN108701957A (en) * | 2016-03-03 | 2018-10-23 | 株式会社藤仓 | Guiding device, light-guiding method and LD modules |
| CN109212772A (en) * | 2018-10-19 | 2019-01-15 | 中国航空制造技术研究院 | A kind of laser coherence polarized combination method and its system |
| CN113310670A (en) * | 2021-06-03 | 2021-08-27 | 中国科学院空天信息创新研究院 | Laser polarization beam combination measuring device |
| CN114243452A (en) * | 2022-02-24 | 2022-03-25 | 深圳市星汉激光科技股份有限公司 | Interlocking light path of semiconductor laser |
Families Citing this family (1)
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| CN108808436B (en) * | 2018-06-20 | 2020-01-14 | 中国工程物理研究院应用电子学研究所 | Multi-beam common-aperture coherent synthesis device based on flat-plate beam combiner |
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