CN103107111A - 用于监测线接合中无空气球（fab）形成的方法和装置 - Google Patents

用于监测线接合中无空气球（fab）形成的方法和装置 Download PDF

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CN103107111A
CN103107111A CN201110356332XA CN201110356332A CN103107111A CN 103107111 A CN103107111 A CN 103107111A CN 201110356332X A CN201110356332X A CN 201110356332XA CN 201110356332 A CN201110356332 A CN 201110356332A CN 103107111 A CN103107111 A CN 103107111A
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fab
pseudo
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defective
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CN103107111B (zh
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宗飞
贡国良
黄美权
刘赫津
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NXP USA Inc
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Freescale Semiconductor Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
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    • B23K20/004—Wire welding
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Abstract

本发明涉及一种用于监测线接合中无空气球(FAB)形成的方法和装置。利用成像单元检查伪FAB的轮廓以识别伪FAB中的缺陷。如果伪FAB有缺陷则触发报警并且中断线接合处理由此使得可以调节接合参数。在已经调节了接合参数之后重新开始线接合处理。

Description

用于监测线接合中无空气球(FAB)形成的方法和装置
背景技术
本发明涉及半导体器件组装，并且更具体地，涉及一种用于在线接合期间监测无空气球(FAB)形成的方法和装置。 
半导体管芯是形成在半导体晶片上的小型集成电路。管芯被从晶片上切下并随后连附到衬底或者半导体芯片载体。利用线接合设备通过使用接合线，半导体管芯上的接合衬垫被电气地连接到载体上的电接触(也被称为引线或者引线指)。线接合是一种使用热、压力和超声波能量的组合以形成接合线和接合衬垫和载体引线之间的连接的固态工艺。 
在线接合类型器件的半导体器件组装时，线被馈送进入线接合机器的毛细管(capillary)中。通常，第一球焊被用于将线的尖端连附到管芯上的接合衬垫。通过将高电压电荷施加至所述线的尖端(其将熔化该尖端由此使得在该尖端处形成球)，从而形成球焊。所述球随后被焊到管芯接合衬垫。线随后被移到载体的其中一个引线并且形成第二接合以将该线的另一个端部连附至芯片载体的引线。 
通过被称为电子火焰熄灭(EFO)的处理通过电离空气隙而实现球形成工艺。在EFO中，在两个电极之间发生电加热放电：一个电极是所述线，通常是铜或者金(阳极)；而另一个电极是平板(阴极)。EFO探针在放电期间产生的热使得线电极熔化，并且熔融金属的表面张力使得金属卷起变成球形。当已经有足够量的金属(线)被熔化时，终止放电并且允许熔化的球固化。所得到的球被称为无空气球(FAB)。适当的还原剂，例如混合气体(最常见的是氢和氮以适当的浓度的混合)被用于最小化FAB的氧化，如果线是由铜制成的，那么这是尤其重要的。 
FAB可能遭受与形状、尺寸、圆度、粗糙度和亮度相关的缺陷和 不均匀，其出现原因在于EFO参数的变化，例如EFO探针和线之间的距离、混合气体的放电率和混合气体的放电的时序等。错误地设置的EFO参数导致接合故障，包括形成“花状”球、“高尔夫球”以及接合衬垫损伤。这些缺陷可能在总体IC产品良率和成本方面扮演重要的角色。缺陷的FAB轮廓可能导致缺陷或者低质量，其可能使得器件在生产后的质量检查期间被否决。此外，如果线接合器生产了缺陷的FAB，则整个生产批次可能被拒绝，这导致了高生产成本和低产量。因此，期望在线接合处理期间对FAB形成的监测和检查以节省时间和成本。 
根据上述内容，需要在线接合处理中监测FAB的形成。 
发明内容
在本发明的一个实施例中，提供了一种在线接合处理期间用于监测无空气球(FAB)形成的方法。将伪接合线连附到半导体芯片载体的第一表面上的未使用位置。随后使所述伪接合线从所述第一表面延伸预定的距离，优选地沿着基本上垂直于所述第一表面的轴延伸，以使得所述伪接合线的尖端与所述第一表面间隔开。利用成像单元检查所述伪FAB的轮廓以识别所述伪FAB中的一个或更多个缺陷。如果在伪FAB中识别出一个或更多个缺陷则可以触发报警并且中断线接合处理。随后可以调节一个或更多个线接合参数并重新开始所述线接合处理。
在本发明的另一个实施例中，提供了一种在线接合处理中监测FAB形成的装置。所述装置包括线接合器、成像单元和处理器。所述线接合器将伪接合线连附到所述半导体芯片载体的未使用位置，并且随后使所述伪接合线从所述未使用位置延伸预定距离，以使得所述伪接合线的尖端与所述未使用位置间隔开。随后，在所述伪接合线的尖端上形成伪FAB。成像单元检查伪FAB的轮廓并且将图像数据传送到处理器。处理器分析所述图像数据以确定所述伪FAB是否是缺陷的。如果是，处理器可以触发报警信号，表明缺陷的伪FAB。处理器还可以中断线接合处理，调节FAB形成参数，并随后重新开始线接合处理。 
附图说明
当结合附图阅读时，将会更好地理解本本发明的优选实施例的以下具体实施方式。通过举例的方式示出了本发明，并且本发明不限于附图，其中相同的参考标号表明相同的部件。 
图1示出了根据本发明实施例的用于在线接合中监测无空气球(FAB)形成的装置的示意图； 
图2示出了根据本发明实施例的形成在半导体芯片载体上的伪无空气球(FAB)的示意图； 
图3A、3B、3C和3D示出了各种FAB轮廓； 
图4示出了根据本发明实施例的用于在线接合处理中监测FAB形成的方法的流程图；以及 
图5示出了根据本发明实施例的用于在线接合处理中监测FAB形成的方法的更详细的流程图。 
具体实施方式
以下参考附图阐述的具体实施方式意在描述当前本发明的优选实施例，而并非意图表示本发明仅仅可以以这种形式实施。将要理解，可以通过意图被包括在本发明精神和保护范围内的不同的实施例来完成相同的或等效的功能。 
本发明的各种实施例提供了在线接合处理中用于监测FAB形成的方法和装置。FAB监测在原位执行，即，在线接合处理期间执行。由此，与生产后检测相反，在线接合处理期间检测到缺陷的FAB形成，从而导致显著的生产率和器件良率的增长。在本发明的各种实施例中，在接合处理自身期间调节一个或更多个接合参数，由此最小化整个产品批次被否决的可能性。最后，由于在半导体芯片载体上的未使用的位置处形成了伪FAB，因此不会影响实际的接合位置。 
现在参考图1，示出了根据本发明各种实施例的在组装半导体器件期间用于监测线接合处理中的无空气球(FAB)形成的装置100的示 意图。装置100包括电子火焰熄灭(EFO)探针102、电子火焰熄灭(EFO)控制器104、处理器106、成像单元108、显示单元110和线接合器116。成像单元108包括光源112和拍摄装置114。 
线接合器116包括毛细管118。毛细管118的顶端被固定至接合头(未示出)。在接合毛细管118的底部端处，EFO探针102在水平的XY方向上被布置在距离毛细管118的底部尖端的预定距离处。EFO探针、EFO控制器104和毛细管118在现有技术中是已知的。接合线120从接合头通过毛细管118的底部以垂直地向下的方向被传送通过毛细管118。接合线120可以包括各种电气地导电的材料，例如金、铝、铜或者贱金属的合金。然而，由于铜线比金线硬，因此本发明特别适用于铜线接合。如在现有技术中已知的，通过EFO探针102产生的放电，FAB 122被形成在接合线120的底部尖端处。由EFO控制器104设置EFO参数，例如EFO探针102和毛细管118之间的水平距离、混合气体的放电率、混合气体放电的时序等等。应当注意，不同的FAB形成工艺和众多的线接合器，例如线接合器116，在现有技术中是众所周知的，因此已经从本说明书中省略掉了进一步附加的细节以免使本发明变得模糊。 
在本发明的一个实施例中，成像单元108位于水平XY平面中与毛细管118的底部尖端具有预定的距离，由此使得其可以在FAB监视处理期间获得FAB 122的图像，如以下讨论的。在必要时，成像单元108可以利用适当的连附装置连附到线接合器116。在监测时，毛细管118移动远离FAB 122。光源112恰当地聚焦于FAB 122以便照明FAB 122，由此使得可以获得FAB 122的清楚的图像。拍摄装置114对FAB 122拍照并且将FAB 122的图像传输至处理器106。处理器106对FAB 122的图像进行处理以识别FAB 122轮廓中的一个或更多个缺陷。显示单元110还连接到处理器106并且显示例如FAB 122的各种图像和信息、报警指示等等。 
在本发明的另一实施例中，拍摄装置114与显微镜(未示出)例如扫描电子显微镜(SEM)一起使用，以放大FAB 122的图像。在本发明的另一实施例中，成像单元108包括光源112和显微镜，并且FAB 122的轮廓由人进行目视检查。进一步，在本发明的一个实施例中，装置100可以包括报警产生单元(未示出)，用于在检测到缺陷的FAB轮廓时产生报警；例如，处理器106可以包括报警产生逻辑(硬件和软件)。 
现在参考图2，示出了利用图1的线接合装置100形成的伪无空气球(FAB)212的示意图。更具体地，图2示出了半导体芯片载体200，在本实施例中是引线框，具有第一表面201，半导体管芯202被安装在第一表面201上。如在现有技术中已知的，半导体管芯202包括一个或更多个接合衬垫，例如204a和204d(此后其共同地被称为接合衬垫204)。半导体芯片载体200在第一表面201(即，半导体芯片载体200的顶表面)上具有一个或更多个对应的电接触(也被称为引线或者引线指)206a、206b、206c和206d(此后被共同地称为引线指206)。在如图2所示的示例性实施例中，如在现有技术中已知的，接合线将管芯接合焊盘204与引线指206中对应的引线指连接。半导体芯片载体200还具有没有用于接合线的一个或更多个位置，例如未使用的引线206e和206f，和系条208。线接合处理、半导体芯片载体200和半导体管芯202都是在现有技术中众所周知的。 
根据本发明，线接合器116将伪接合线210连附至芯片载体200的其中一个未使用的位置，例如引线指206e，并随后使伪接合线210延伸远离芯片载体200的第一表面201预定的距离。线210优选地沿着大体上垂直于半导体芯片载体200的第一表面201的轴延伸。将会理解，尽管线210优选地垂直延伸，即，使得伪线210垂直于第一表面201，然而这不是本发明的必要条件。 
线接合器116随后在伪线210的远离芯片载体200的第一表面201的尖端上形成伪FAB 212。在形成伪FAB 212之后，如在现有技术中已知的，利用夹持器(未示出)使接合线120与伪FAB 122分离。在本发明的另一实施例中，伪线210从表面201延伸预定距离并随后被切割。随后形成樱桃核状的伪FAB并且种植到伪线210的尖端上。图2中还示出了伪FAB 212的放大图。 
在毛细管118被移动远离伪FAB 122之后，利用光源112照明伪FAB 122并且利用拍摄装置114获得伪FAB 212的图像。处理器106对该图像进行处理以识别伪FAB 122轮廓中的一个或更多个缺陷。 
优选或者理想的FAB的形状是大体上球形的并且具有预定的直径和粗糙度特性，如在现有技术中已知的。然而，由于EFO参数和混合气体的变化，所得到的FAB通常包含缺陷。现在参考图3A-3D，示出了各种FAB轮廓。图3A示出了完美圆形的并且满足预定的粗糙度、亮度和直径规范的理想轮廓300。图3B、3C和3D示出了表现出缺陷的或者不希望的FAB的各种FAB轮廓。图3B示出了″高尔夫球″FAB302，其中在FAB 302的表面周围观察到一个或更多个浅凹或者小的凹陷304。图3C示出了拉长的FAB 306，即，FAB 306的形状不是完美的球形。图3D示出了另一可能的缺陷的FAB轮廓308，其中在FAB的表面上布置有一个或更多个变形或者折皱308。多个与FAB的形状、尺寸、粗糙度和亮度相关的其他缺陷也是可知的，并且可以被特征化以便识别缺陷的或者低质量的FAB。处理器106将所捕捉的图像数据与上述低质量FAB轮廓数据进行比较，从而识别出伪FAB 212中的一个或更多个缺陷。在本发明的一个实施例中，如果伪FAB 212被确定为缺陷的，则处理器106触发或者产生报警。可以由操作员人工地响应报警以中断线接合处理，调节FAB形成参数，并随后重新开始处理，或者上述步骤可以利用装置100本身自动化和执行。 
本发明还提供一种方法用于监测线接合处理期间的无空气球(FAB)形成以及识别FAB中的缺陷。 
现在参考图4，示出了根据本发明实施例的线接合处理中的用于监测无空气球(FAB)形成的方法的流程图。将参考图1和2同时说明图4。在步骤402，伪接合线210被连附在半导体芯片载体200的第一表面上的未使用位置处，类似未使用的引线指或者引线框的系条。伪接合线210随后延伸远离芯片载体200的表面201以便使伪接合线210的尖端从芯片载体200的表面间隔开。在一个实施例中，伪接合线210基本上垂直于芯片载体200的第一表面201延伸。伪接合线210延伸远离芯片 载体200的第一表面201，由此使得可以获得良好的伪FAB的图像。当确定与第一表面201的距离时要考虑的一些要素是线的直径和封装结构。例如，在一个实施例中，伪FAB 212被形成为与芯片载体200的第一表面201的距离为大约3-5mil。然而，只要伪接合线210确实接触其他接合线或者延伸足够远以使得其将延伸超过最终的封装模塑化合物并且被暴露，那么其他距离也是适用的。 
在步骤404，伪FAB 212被形成或者种植在伪接合线210的与芯片载体200的表面201间隔开的尖端上。伪FAB 212将被假定具有与在线接合器的通常的线接合处理期间形成的FAB相同的尺寸、形状和特性，这是因为用于FAB形成的参数已经被编程输入到线接合装置100中。接下来，在步骤406，利用成像单元108检查伪FAB 212的轮廓以识别伪FAB 212中的缺陷。 
现在参考图5，示出了根据本发明实施例的线接合处理中的用于监测无空气球(FAB)形成的更详细方法的流程图。将参考图1、2、3和图5中所示的步骤。步骤502，504和506分别类似于图4的步骤402，404和406。在步骤508，如图3所示，处理器106检查伪FAB 212的轮廓是否包含缺陷。 
如果FAB 212的轮廓包含缺陷，在步骤510，临时停止或者中断接合处理并触发报警。报警向操作员或者处理器106表明FAB 212的轮廓包含缺陷。在步骤512，操作员可以检查报警以确定原因并且利用SEM视觉地分析伪FAB的轮廓。如果报警被确定为真，即，如果伪FAB 212包含缺陷，则在步骤514调节装置100的接合参数。如果报警为假，则在步骤516由操作员清除该报警。 
在本发明的一个实施例中，可以以预定的时间间隔重复所述方法以在整个线接合处理中监测FAB的形成。在本发明的另一实施例中，对于在一个批次中组装的每一个半导体器件重复所述处理。可选地，可以在形成预定数目的线接合之后重复处理一次。应当理解，取决于需要，可以随机地重复处理或者以任何适当的频率重复所述处理。例如，对于每十个组装的器件执行处理一次。监测的频率可以由操作员 设置，对应地，据此对处理器106和线接合器116进行编程。此外，应当注意，本发明同样地可应用到正向和反向的线接合处理。 
尽管已经示出了和描述了本发明的优选实施例，但是很显然本发明不仅仅局限于这些实施例。在不背离如权利要求书描述的本发明的精神和保护范围的情况下，许多的改型、变化、改变、替换和等价物对于本领域技术人员是明显的。 

Claims (10)

1.一种组装半导体器件期间用于监测无空气球FAB形成的方法，所述方法包括：
将伪接合线连附到半导体芯片载体的第一表面上的未使用位置；
使所述伪接合线从所述第一表面延伸预定的距离，以使得所述伪接合线的尖端与所述第一表面上的未使用位置间隔开；
在所述伪接合线的尖端处形成伪FAB；以及
利用成像单元检查所述伪FAB的轮廓以识别所述伪FAB中的一个或更多个缺陷。
2.如权利要求1所述的方法，进一步包括基于识别出一个或更多个缺陷而中断所述组装处理。
3.如权利要求2所述的方法，进一步包括：
在中断所述组装处理之后调节一个或更多个线接合参数；以及
利用所调节的参数重新开始所述组装处理。
4.如权利要求1所述的方法，进一步包括基于识别出一个或更多个缺陷而触发报警。
5.如权利要求1所述的方法，其中所述伪接合线沿着基本上垂直于所述第一表面的轴延伸。
6.如权利要求1所述的方法，其中
所述未使用位置包括未使用的信号引线、未使用的接地引线和半导体芯片载体的系条中的一个；
所述伪接合线由铜构成；以及
所述成像单元包括拍摄装置、光源和显微镜中的至少其中之一。
7.一种在组装半导体器件期间用于监测线接合处理中的无空气球FAB形成的装置，所述装置包括：
线接合器，用于利用接合线将半导体管芯接合衬垫与半导体芯片载体的引线电气地连接，其中所述线接合器将伪接合线连附到所述半导体芯片载体的第一表面上的未使用位置，使所述伪接合线从所述第一表面延伸预定的距离，以使得所述伪接合线的尖端与所述第一表面间隔开，并且在所述伪接合线的尖端上形成伪FAB；
成像单元，用于获得所述伪FAB的图像以识别所述伪FAB中的一个或更多个缺陷；以及
处理器，连接到所述成像单元和所述线接合器，所述处理器被配置为基于识别出一个或更多个缺陷而中断所述线接合器，当所述伪FAB包含一个或更多个缺陷时调节一个或更多个线接合参数，并且在调节所述一个或更多个线接合参数之后重新开始所述线接合器以继续所述线接合处理。
8.如权利要求7所述的装置，其中所述接合线沿着基本上垂直于所述第一表面的轴延伸所述预定的距离，以及在所述伪FAB中识别出一个或更多个缺陷后，所述处理器产生报警。
9.如权利要求7所述的装置，其中所述未使用的位置包括未使用的信号引线、未使用的接地引线和半导体芯片载体的系条中的一个。
10.如权利要求7所述的装置，其中所述成像单元包括拍摄装置、光源和显微镜中的至少其中之一。
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