CN102725847A - Integrated detector, and detecting method thereof, optical module and optical network system - Google Patents
Integrated detector, and detecting method thereof, optical module and optical network system Download PDFInfo
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- CN102725847A CN102725847A CN2011800029678A CN201180002967A CN102725847A CN 102725847 A CN102725847 A CN 102725847A CN 2011800029678 A CN2011800029678 A CN 2011800029678A CN 201180002967 A CN201180002967 A CN 201180002967A CN 102725847 A CN102725847 A CN 102725847A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
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- H04—ELECTRIC COMMUNICATION TECHNIQUE
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- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
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Abstract
The present invention discloses an integrated detector, a detecting method thereof, an optical module and an optical network system, and relates to the field of communication. When the intensity of a converted electrical signal being detected in a detecting unit is realized, a data recovering unit can simultaneously recover data signals carried on the light; and further, complexity of a packaging process is reduced. The integrated detector comprises a detecting unit and a data recovering unit, wherein the detecting unit is used for receiving a first optical signal sent by an optical network unit, and after photoelectric conversion, the intensity of the converted electrical signal is detected; and the data recovering unit is used for receiving a first optical signal sent by an optical line terminal, and after photoelectric conversion, the data signals carried on the light are recovered.
Description
Technical field
The present invention relates to the communications field, relate in particular to a kind of integrated detector and detection method thereof, optical module, optical network system.
Background technology
In recent years; Passive optical-fiber network (Passive Optical Network, PON) technology relies on its network architecture of putting multiple spot and advantage such as passive, inserts (Fiber to the x at optical fiber; FTTx) field; More and more receive the favor of operator, and the large scale deployment of passive optical-fiber network, directly be limited by the influence of optical module cost.Yet, at present, two detectors need be set in the optical module, to carry out the detection and the conversion of light signal respectively, this just makes that the packaging technology of product is comparatively complicated, and optics is more, and cost is high.
Summary of the invention
Embodiments of the invention provide a kind of integrated detector and detection method thereof, optical module, optical network system; When can be implemented in the power of the signal of telecommunication after detection is changed; Data recovery unit recovers the data-signal that is carried on the light; Further, reduced the complexity of packaging technology.
For achieving the above object, embodiments of the invention adopt following technical scheme:
On the one hand, the embodiment of the invention provides a kind of integrated detector, comprising: detecting unit and data recovery unit, wherein,
Said detecting unit is used to receive first light signal that sends from optical network unit, after opto-electronic conversion, detects the power of the signal of telecommunication after the said conversion;
Said data recovery unit is used to receive second light signal that sends from optical line terminal, after opto-electronic conversion, recovers the data-signal that is carried on the light.
On the one hand, the embodiment of the invention provides a kind of detection method of integrated detector, and said method comprises:
First light signal that reception is sent from optical network unit after opto-electronic conversion, detects the power of the signal of telecommunication after the said conversion;
Reception after opto-electronic conversion, recovers the data-signal that is carried on the light from second light signal that optical line terminal sends.
On the one hand; The embodiment of the invention provides a kind of optical module; Comprise: laser, filter and first fiber waveguide, said laser is connected with said filter through said first fiber waveguide, it is characterized in that; Said optical module also comprises: the integrated detector and second fiber waveguide, and said integrated detector is connected with said laser through said second fiber waveguide; Wherein,
Said laser is used to produce first light signal, through said first fiber waveguide said first light signal is sent to said integrated detector;
Said filter is used to receive second light signal that optical line terminal sends, and said second light signal is sent to said integrated detector;
Said integrated detector is used to receive first light signal that sends from optical network unit, after opto-electronic conversion, detects the power of the signal of telecommunication after the said conversion; And receive second light signal that sends from optical line terminal, after opto-electronic conversion, recover the data-signal that is carried on the light.
On the one hand; The embodiment of the invention provides a kind of smooth network system; Said optical network system comprises: optical line terminal, optical network unit and optical distribution network; Said optical line terminal is connected with said optical network unit through optical distribution network, and said optical network unit comprises any one above-mentioned integrated detector.
A kind of integrated detector that the embodiment of the invention provides and detection method thereof, optical module, optical network system are through being provided with detecting unit and data recovery unit, wherein; Detecting unit can receive first light signal that sends from optical network unit; After opto-electronic conversion, detect the power of the signal of telecommunication after changing, data recovery unit can receive second light signal that sends from optical line terminal; After opto-electronic conversion; Recover the data-signal that is carried on the light, thereby realized that data recovery unit recovers the data-signal that is carried on the light in the power of the signal of telecommunication after the detection conversion; Further, reduced the complexity of packaging technology.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art; To do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below; Obviously, the accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the integrated detector structural representation of the embodiment of the invention;
Fig. 2 is the integrated detector manufacture method flow chart of the embodiment of the invention;
Fig. 3 is the detection method schematic flow sheet of the integrated detector of the embodiment of the invention;
Fig. 4 is the optical module structural representation of the embodiment of the invention;
Fig. 5 is the light network system structural representation of the embodiment of the invention.
Embodiment
To combine the accompanying drawing in the embodiment of the invention below, the technical scheme in the embodiment of the invention is carried out clear, intactly description, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the present invention's protection.
Embodiment one
The embodiment of the invention provides a kind of integrated detector 1, and is as shown in Figure 1, detecting unit 12 and data recovery unit 13, wherein,
Said detecting unit 12 is used to receive first light signal that sends from optical network unit, after opto-electronic conversion, detects the power of the signal of telecommunication after the said conversion;
Said data recovery unit 13 is used to receive second light signal that sends from optical line terminal, after opto-electronic conversion, recovers the data-signal that is carried on the light.
Further, integrated detector 1 also comprises: electricity isolated layer 103 is used for the signal of telecommunication of said detecting unit 12 and the signal of telecommunication of said data recovery unit 13 are isolated.
Further; The incident direction of second light signal that the incident direction of first light signal that said detecting unit 12 receives and said data recovery unit 13 receive is opposite; And the incident direction of the incident direction of said first light signal and said second light signal all is parallel to said electricity isolated layer 103; Or the incident direction of first light signal of said detecting unit 12 receptions is identical with the incident direction of second light signal of said data recovery unit 12 receptions, and the incident direction of the incident direction of said first light signal and said second light signal all is parallel to said electricity isolated layer 103.
Further, integrated detector 1 also comprises: substrate 101, said detecting unit 12 all is integrated on the said substrate 101 with said data recovery unit 13, and said substrate 101 is the semi-insulating inp material.
Further, detecting unit 12 comprises: first table top, first metal electrode layer, 109, the first sub-n utmost point layer 104 and first reflecting surface 114, wherein,
Said first table top is after depositing n utmost point layer 102, absorbed layer, P utmost point layer on the said substrate 101 successively; Utilize photoetching process; Etching P utmost point layer and absorbed layer are formed; And the indium phosphide that said n utmost point layer 102 mixes for the N type, said absorbed layer is the InGaAsP material, the indium phosphide that said P utmost point layer mixes for the P type;
Said first metal electrode layer 109 is behind depositing metal layers on said first table top, utilizes chemical corrosion method, and it is formed to corrode said metal level;
The said first sub-n utmost point layer 104 is to utilize the wet etching method, and the said n utmost point of etching layer 102 is formed;
Said first reflecting surface 114 is to utilize the wet etching method, and the etching said first sub-n utmost point layer 104 is formed;
Said data recovery unit 13 comprises: second table top, second metal electrode layer, 113, the second sub-n utmost point layer 105 and second reflecting surface 115, wherein,
Said second table top is after depositing said n utmost point layer 102, absorbed layer, P utmost point layer on the said substrate 101 successively; Utilize photoetching process; Etching said P utmost point layer and absorbed layer are formed; And the indium phosphide that said n utmost point layer 102 mixes for the N type, said absorbed layer is the InGaAsP material, the indium phosphide that said P utmost point layer mixes for the P type;
Said second metal electrode layer 113 is behind depositing metal layers on said second table top, utilizes chemical corrosion method, and it is formed to corrode said metal level;
The said second sub-n utmost point layer 105 is to utilize the wet etching method, and the said n utmost point of etching layer 102 is formed;
Said second reflecting surface 115 is to utilize the wet etching method, and the etching said second sub-n utmost point layer 105 is formed.
Further; Said detecting unit 12 also comprises: the first light inlet inclined-plane 116; The said first light inlet inclined-plane 116 is to utilize the wet etching method, and the etching said first sub-n utmost point layer 104 is formed, and the said first sub-n utmost point layer 104 is injected on the said first light inlet inclined-plane 116 of said first optical signals;
Said data recovery unit 13 also comprises: the second light inlet inclined-plane 117; The said second light inlet inclined-plane 117 is to utilize the wet etching method; The etching said second sub-n utmost point layer 105 is formed, and the said second sub-n utmost point layer 105 is injected on the said second light inlet inclined-plane 117 of said second optical signals.
The integrated detector that the embodiment of the invention provides is through being provided with detecting unit and data recovery unit, wherein; Detecting unit can receive first light signal that sends from optical network unit, after opto-electronic conversion, detects the power of the signal of telecommunication after changing; Data recovery unit can receive second light signal that sends from optical line terminal, after opto-electronic conversion, recovers the data-signal that is carried on the light; Thereby realized in the power of the signal of telecommunication after the detection conversion; Data recovery unit recovers the data-signal that is carried on the light, further, has reduced the complexity of packaging technology.
Embodiment two
The embodiment of the invention provides a kind of integrated detector 1; As shown in Figure 1, the concrete structure of integrated detector 1 comprises detecting unit 12, data recovery unit 13, and detecting unit 12 and data recovery unit 13 all are arranged on the substrate 101 of semi-insulating inp material; Wherein
Detecting unit 12 comprises:
First sub-n utmost point layer 104, the first sub-n utmost point layer 104 can be the indium phosphide of n type doping;
First absorbed layer, 106, the first absorbed layers 106 that on the first sub-n utmost point layer 104, are provided with can be the InGaAsP material;
First reflecting surface 114 that in the first sub-n utmost point layer 104, is provided with;
The detecting unit 12 that is constituted by the first sub-n utmost point layer 104, first absorbed layer 106, a P utmost point layer 108, first metal electrode layer 109 and first reflecting surface 114; Can receive the light that sends from laser in the active optical module; Be first light signal, and under the effect of first metal electrode layer 109, be in the reverse voltage state, detecting unit 12 makes through first light signal of the first sub-n utmost point layer 104; Reflex through first reflecting surface 114; Inject first absorbed layer 106, to detect the power of the signal of telecommunication after changing, the detecting unit 12 of this moment is equivalent to an independent monitoring detector;
Second sub-n utmost point layer 105, the second sub-n utmost point layer 105 can be the indium phosphide of n type doping;
Second absorbed layer, 110, the first absorbed layers 110 that on the second sub-n utmost point layer 105, are provided with can be the InGaAsP material;
The second electrode lay 111 that on second absorbed layer 110, is provided with; First electrode 111 can comprise the 2nd P utmost point layer 112 and second metal electrode layer 113; Wherein, the 2nd P utmost point layer 112 can be the indium phosphide of P type doping, and second metal electrode layer 113 can be metal material;
Second reflecting surface 115 that in the second sub-n utmost point layer 105, is provided with;
The data recovery unit 13 that is constituted by the second sub-n utmost point layer 105, second absorbed layer 110, the 2nd P utmost point layer 112, second metal electrode layer 113 and second reflecting surface 115; Can receive light through active optical module median filter from optical fiber; Be second light signal; And under the effect of second metal electrode layer 113, be in the reverse voltage state, data recovery unit 117 makes through second light signal of the second sub-n utmost point layer 105, through the reflex of second reflecting surface 115; Inject second absorbed layer 110; So that light signal is converted into the signal of telecommunication, recover the data-signal that is carried on the light, the data recovery unit 13 of this moment is equivalent to an independent photodetector.
Further, integrated detector 1 also comprises electricity isolated layer 103, and electricity isolated layer 103 can be isolated the signal of telecommunication of detecting unit 12 and the signal of telecommunication of data recovery unit 13, and electricity isolated layer 103 specifically can be organic polymer or air;
Need to prove; First metal electrode layer 109 can be divided into positive metal electrode 1091, negative metal electrode 1092, and wherein, positive metal electrode 1091 connects positive voltage and contacts with the first sub-n utmost point layer 104; Negative metal electrode 1092 connects negative voltage or ground connection contacts with a P utmost point layer 108; Under the acting in conjunction of positive metal electrode 1091, negative metal electrode 1092, detecting unit 12 just is in the reverse voltage state always like this, to detect the power of incident optical signal.Same, second metal electrode layer 113 also can be divided into positive metal electrode 1131, negative metal electrode 1132, wherein; Positive metal electrode 1131 connects positive voltage and contacts with the second sub-n utmost point layer 105; Negative metal electrode 1132 connects negative voltage and contacts with the 2nd P utmost point layer 112, and under the acting in conjunction of positive metal electrode 1131, negative metal electrode 1132, data recovery unit 13 just is in the reverse voltage state always like this; Light signal with incident is converted into current signal, recovers the data-signal that is carried on the light.
Exemplary; Opposite and the incident direction first light signal and second light signal of the incident direction of first light signal and second light signal is parallel to electricity isolated layer 103; Like this, can avoid first light signal and second light signal to crosstalk injecting integrated detector 1 front and back, and; Under the effect of electricity isolated layer 103, also avoided first light signal and second light signal that electricity takes place after opto-electronic conversion and crosstalked.
The description of above-mentioned incident direction to first light signal and second light signal only is exemplary; Certainly also can adopt other incident mode; Identical and first light signal is parallel with electricity isolated layer with the incident direction of second light signal like incident direction; Or incident direction is opposite and first light signal is vertical with electricity isolated layer with the incident direction of second light signal; Because all be will make the power of the signal of telecommunication after the integrated detector detection is changed or recover the data-signal that is carried on the light, repeat no more so principle is identical here, but also should be within protection scope of the present invention.
As can be seen from Figure 1, the detecting unit by the first sub-n utmost point layer, first absorbed layer, a P utmost point layer, first metal electrode layer and first reflecting surface are formed can receive the light that sends from laser in the active optical module; Be first light signal; First light signal gets into the first sub-n utmost point layer, and in the first sub-n utmost point layer, propagates, when first light signal arrives first reflecting surface; Under the effect of first reflecting surface; Can inject first absorbed layer, when first light signal is injected first absorbed layer, in the effect of first metal electrode layer and be in reverse voltage status detection unit always; Can detect the luminous intensity of first light signal, the detecting unit of this moment is equivalent to an independent monitoring detector.Same, the data recovery unit by the second sub-n utmost point layer, second absorbed layer, the 2nd P utmost point layer, second metal electrode layer and second reflecting surface are formed can receive the light from optical fiber through active optical module median filter; Be second light signal; Second light signal gets into the second sub-n utmost point layer, and in the second sub-n utmost point layer, propagates, when second light signal arrives second reflecting surface; Under the effect of second reflecting surface, can inject second absorbed layer.When second light signal is injected second absorbed layer; In the effect of second metal electrode layer and be in the data recovery unit of reverse voltage state always; Can incident optical signal be converted into the signal of telecommunication, the data recovery unit of this moment is equivalent to an independent photodetector.
Further, the embodiment of the invention is carried out exemplary illustration to the manufacture method of integrated detector 1, and is as shown in Figure 2, and manufacture method is:
S201, on substrate, deposit n utmost point layer, absorbed layer, P utmost point layer successively.
On the substrate of semi-insulating inp material, deposit the n utmost point layer of the indium phosphide of n type doping, the absorbed layer of InGaAsP material and the P utmost point layer of the indium phosphide that the P type mixes successively.
S202, utilize photoetching process, etching P utmost point layer and absorbed layer form first table top and second table top, and first table top comprises first absorbed layer and a P utmost point layer, and second table top comprises second absorbed layer and the 2nd P utmost point layer.
Adopt photoetching process, can disposable etching absorbed layer, P utmost point layer, forming first table top and second table top, the edge of first table top, second table top can be not and n utmost point layer coincident, and exist at interval between first table top and second table top.First table top comprises first absorbed layer and a P utmost point layer, and second table top comprises second absorbed layer and the 2nd P utmost point layer.
It is to be noted; The manufacture method of first table top and second table top just has been described here, and the shape to first table top and second table top does not limit, and certain first table top, second table top can be that circular, rectangle or other are irregularly shaped; Specifically the shape by lattice determines; But all be to adopt photoetching process, so manufacture method is identical, also should be in protection range of the present invention.
S203, on n utmost point layer, first table top and second table top depositing metal layers.
After utilizing photoetching process to etch first table top, second table top, depositing metal layers on the n utmost point layer that exposes and first table top, second table top.
S204, utilize chemical corrosion method, the corroding metal layer forms first metal electrode layer, second metal electrode layer.
Need to prove; First metal electrode layer here can be divided into positive and negative metal electrode, and positive metal electrode connects positive voltage and is positioned on the n utmost point layer, and and first table top between gapped; Negative metal electrode connects negative voltage or ground connection is positioned on first table top, promptly contacts with a P utmost point layer.Same; Second metal electrode layer here also can be divided into positive and negative metal electrode, and positive metal electrode connects positive voltage and is positioned on the n utmost point layer, and and second table top between gapped; Negative metal electrode connects negative voltage or ground connection is positioned on second table top, promptly contacts with the 2nd P utmost point layer.
S205, utilize the wet etching method, etching n utmost point layer forms the first light inlet inclined-plane, the second light inlet inclined-plane respectively.
Utilize the wet etching method; Etching n utmost point layer forms the first light inlet inclined-plane and the second light inlet inclined-plane, and its particular location can be the edge of n utmost point layer; The first light inlet inclined-plane and the second light inlet inclined-plane can be positioned at the same side of n utmost point layer; Also can be positioned at the not homonymy of n utmost point layer, the first light inlet inclined-plane and the second light inlet inclined-plane not only can reduce reflection of incident light, and can reduce the interference that reverberation produces incident light.N utmost point layer is injected on first optical signals, the first light inlet inclined-plane, and n utmost point layer is injected on second optical signals, the second light inlet inclined-plane.
S206, utilize the wet etching method; Etching n utmost point layer; Form electricity isolated layer, electricity isolated layer is divided into the first sub-n utmost point layer and the second sub-n utmost point layer with n utmost point layer, simultaneously the etching first sub-n utmost point layer, the second sub-n utmost point layer; Make in the first sub-n utmost point layer, to form first reflecting surface, in the second sub-n utmost point layer, form second reflecting surface.
At first need to prove; Draw the notion of the first sub-n utmost point layer and the second sub-n utmost point layer as step S206 after; The position on the first light inlet inclined-plane and the second light inlet inclined-plane is just clearer and more definite among the step S205; Utilize wet etching to form the first light inlet inclined-plane and the second light inlet inclined-plane among the step S205, this first light inlet inclined-plane and the second light inlet inclined-plane lay respectively at the edge of the first sub-n utmost point layer and the second sub-n utmost point layer, and promptly the degree of depth on the first light inlet inclined-plane and the second light inlet inclined-plane equals the thickness of n utmost point layer.But preferred, when carrying out wet etching, can be through prolonging etch period, the etched portions substrate, if scattering entering substrate takes place before incident incident light, the inclined-plane that is arranged in substrate so also can be brought into play its reflex and reduce reflection of incident light.Further; The first light inlet inclined-plane can be positioned at the edge of a side of first table top; The second light inlet inclined-plane can be positioned at the edge of a side of second table top, and the first light inlet inclined-plane and the second light inlet inclined-plane can homonymies, also homonymy not; The incident direction of such first light signal and second light signal is opposite or identical and be parallel to electricity isolated layer, can avoid first light signal and second light signal optical crosstalk to take place injecting integrated detector before.
Utilize the wet etching method; Between first table top and second table top, form electricity isolated layer; Electricity isolated layer is divided into the first sub-n utmost point layer and the second sub-n utmost point layer with n utmost point layer; And first table top, first metal electrode layer are positioned on the first sub-n utmost point layer, and second table top, second metal electrode layer are positioned on the second sub-n utmost point layer.This electricity isolated layer can be an air gap, also can be specially organic polymer, and perhaps other can be produced on the insulating material on the semiconductor.
Simultaneously, utilize the wet etching method, the etching first sub-n utmost point layer makes in the first sub-n utmost point layer, to form first reflecting surface that this first reflecting surface can be reflected into the light through the first sub-n utmost point layer transmission in first absorbed layer between first table top and electricity isolated layer.Same; Utilize the wet etching method, the etching second sub-n utmost point layer makes in the second sub-n utmost point layer, to form second reflecting surface; This second reflecting surface can be reflected into the light through the second sub-n utmost point layer transmission in second absorbed layer between second table top and electricity isolated layer.
It is pointed out that first reflecting surface, second reflecting surface can be trapezoidal reflecting surface, this is that crystal orientation by crystal lattices determines.Basic characteristics of crystal are to have directivity, and are different along the different directions crystalline nature of lattice.For example, along certain specific crystal orientation, semiconductor device can be easy to dissociate and form a clean smooth plane of disruption.Same, on some specific crystal orientation, chemical corrosion liquid is also different fully to the corrosion rate of crystal.And for indium phosphide, through behind the wet etching, can form one symmetrical trapezoidal, and the slope of hypotenuse is identical.According to semi-conductive crystal orientation characteristic, just in time can realize the wet etching method one time, just can form first reflecting surface and second reflecting surface.
What need replenish is; Utilize wet etching to form electricity isolated layer, first reflecting surface and second reflecting surface among the step S206, this electricity isolated layer is in n utmost point layer, and promptly the thickness of electricity isolated layer equals n utmost point layer; First reflecting surface and second reflecting surface are respectively in the first sub-n utmost point layer and the second sub-n utmost point layer; Promptly the degree of depth of first reflecting surface, second reflecting surface equals the thickness of n utmost point layer, that is to say, step S206 utilizes the disposable etching of wet etching method to form electricity isolated layer, first reflecting surface and second reflecting surface.But preferred, when carrying out the etching of first reflecting surface and second reflecting surface, can be through prolonging etch period; The etched portions substrate, if the light scattering in n utmost point layer, transmitted goes in the substrate, the reflecting surface that is arranged in substrate so also can be brought into play its reflex and reflect light into first absorbed layer or second absorbed layer; At this moment, etching forms electricity isolated layer, first reflecting surface and second reflecting surface can be divided into two steps, promptly utilizes the wet etching method earlier; Etching n utmost point layer; Form electricity isolated layer, electricity isolated layer is divided into the first sub-n utmost point layer and the second sub-n utmost point layer with n utmost point layer, utilizes the wet etching method again; The etching first sub-n utmost point layer, second sub-n utmost point layer and the part substrate form first reflecting surface and second reflecting surface.
So far; The integrated detector of the embodiment of the invention completes; Can find out from the manufacture method of above-mentioned integrated detector; Detecting unit 12 among Fig. 1 is identical with data recovery unit 13 structures, and is integrated on the same substrate 101, and can disposablely on same substrate 101, produce detecting unit 12 and data recovery unit 13.
In order the operation principle of this integrated detector more clearly to be described, as shown in Figure 1 describing.
At first, the operation principle of detecting unit 12 is described, first optical signals, the first light inlet inclined-plane gets into the first sub-n utmost point layer; And in the first sub-n utmost point layer, propagate; When first light signal arrives first reflecting surface, under the effect of first reflecting surface, can inject first absorbed layer.Because the logical positive electricity of the positive metal electrode of detecting unit is connected with the first sub-n utmost point layer; The logical negative electricity of negative metal electrode is connected with a P utmost point layer; Therefore detecting unit is in the reverse voltage state always; When first light signal was injected first absorbed layer, first absorbed layer can detect the luminous intensity of first light signal.
Secondly, the operation principle of data recovery unit 13 is described, second optical signals, the second light inlet inclined-plane gets into the second sub-n utmost point layer; And in the second sub-n utmost point layer, propagate; When second light signal arrives second reflecting surface, under the effect of second reflecting surface, can inject second absorbed layer.Because the logical positive electricity of the positive metal electrode of data recovery unit is connected with the second sub-n utmost point layer; The logical negative electricity of negative metal electrode is connected with the 2nd P utmost point layer; Therefore data recovery unit is in the reverse voltage state always; When second light signal was injected second absorbed layer, second absorbed layer can be converted into the signal of telecommunication with incident optical signal, with the data-signal of recovering bearing on light.
The integrated detector that the embodiment of the invention provides is through being provided with detecting unit, data recovery unit and electricity isolated layer, wherein; Electricity isolated layer can be isolated the signal of telecommunication of detecting unit and the signal of telecommunication of data recovery unit, and detecting unit can receive first light signal that sends from optical network unit, after opto-electronic conversion; Detect the power of the signal of telecommunication after changing; Data recovery unit can receive second light signal that sends from optical line terminal, after opto-electronic conversion, recovers the data-signal that is carried on the light; Thereby realized in the power of the signal of telecommunication after the detection conversion; Data recovery unit recovers the data-signal that is carried on the light, and the signal of telecommunication in the detecting unit and the signal of telecommunication in the data recovery unit electricity does not take place crosstalk, further; Reduce the complexity of packaging technology, improved the reliability of detector.
Embodiment three
The embodiment of the invention provides a kind of detection method of integrated detector, and is as shown in Figure 3, and method comprises:
S301, detecting unit receive first light signal that sends from optical network unit, after opto-electronic conversion, detect the power of the signal of telecommunication after the said conversion.
S302, data recovery unit receive second light signal that sends from optical line terminal, after opto-electronic conversion, recover the data-signal that is carried on the light.
The detection method of the integrated detector that the embodiment of the invention provides; Can receive first light signal that sends from optical network unit; After opto-electronic conversion, detect the power of the signal of telecommunication after the said conversion, and receive second light signal that sends from optical line terminal; After opto-electronic conversion, recover the data-signal that is carried on the light.Further, reduced the complexity of packaging technology.
Embodiment four
The embodiment of the invention provides a kind of optical module, and is as shown in Figure 4, laser 3, filter 4 and first fiber waveguide 5, and optical module also comprises: the integrated detector 1 and second fiber waveguide 2, integrated detector 1 is connected with laser 3 through second fiber waveguide 2;
Laser 3 is used to produce first light signal, through said first fiber waveguide 5 said first light signal is sent to said integrated detector 1;
Filter 4 is used to receive second light signal that optical line terminal sends, and said second light signal is sent to said integrated detector 1;
Integrated detector 1 is used to receive first light signal that sends from optical network unit, after opto-electronic conversion, detects the power of the signal of telecommunication after the said conversion; And receive second light signal that sends from optical line terminal, after opto-electronic conversion, recover the data-signal that is carried on the light.
Further, integrated detector 1 specifically comprises: detecting unit and data recovery unit, and wherein, said detecting unit is used to receive first light signal that sends from optical network unit, after opto-electronic conversion, detects the power of the signal of telecommunication after the said conversion; Said data recovery unit is used to receive second light signal that sends from optical line terminal, after opto-electronic conversion, recovers the data-signal that is carried on the light.
Further, integrated detector 1 also comprises: electricity isolated layer is used for the signal of telecommunication of said retrieval unit and the signal of telecommunication of said data recovery unit are isolated.
Further, said detecting unit comprises: first table top, first metal electrode layer, the first sub-n utmost point layer and first reflecting surface, wherein,
Said first table top is after depositing n utmost point layer, absorbed layer, P utmost point layer on the said substrate successively; Utilize photoetching process; Etching P utmost point layer and absorbed layer are formed; And the indium phosphide that said n utmost point layer mixes for the N type, said absorbed layer is the InGaAsP material, the indium phosphide that said P utmost point layer mixes for the P type;
Said first metal electrode layer is behind depositing metal layers on said first table top, utilizes chemical corrosion method, and it is formed to corrode said metal level;
The said first sub-n utmost point layer is to utilize the wet etching method, and the said n utmost point of etching layer is formed;
Said first reflecting surface is to utilize the wet etching method, and the etching said first sub-n utmost point layer is formed.
Further, said detecting unit also comprises: the first light inlet inclined-plane, and the said first light inlet inclined-plane is to utilize the wet etching method, and the etching said first sub-n utmost point layer is formed, and the said first sub-n utmost point layer is injected on the said first light inlet inclined-plane of said first optical signals.
The embodiment of the invention provides a kind of optical module, through integrated detector is set, not only can receive first light signal that sends from optical network unit; After opto-electronic conversion, detect the power of the signal of telecommunication after the said conversion, and can receive second light signal that sends from optical line terminal; After opto-electronic conversion; Recover the data-signal that is carried on the light, do not crosstalk between the two ways of optical signals that guarantees simultaneously to inject, further; Reduce the complexity of light module package technology, improved the reliability of optical module.
Further; As shown in Figure 5; The embodiment of the invention also provides a kind of smooth network system 400, comprising: optical line terminal 410, optical network unit 420 and optical distribution network 430, and said optical line terminal 410 is connected with said optical network unit 420 through optical distribution network 430; Optical network unit 420 comprises integrated detector 440, and the structure of concrete integrated detector 440 can be with reference to the structure of Fig. 1 and embodiment one described integrated detector.
The above; Be merely embodiment of the present invention, but protection scope of the present invention is not limited thereto, any technical staff who is familiar with the present technique field is in the technical scope that the present invention discloses; Can expect easily changing or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion by said protection range with claim.
Claims (14)
1. an integrated detector is characterized in that, said integrated detector comprises: detecting unit and data recovery unit, wherein,
Said detecting unit is used to receive first light signal that sends from optical network unit, after opto-electronic conversion, detects the power of the signal of telecommunication after the said conversion;
Said data recovery unit is used to receive second light signal that sends from optical line terminal, after opto-electronic conversion, recovers the data-signal that is carried on the light.
2. integrated detector according to claim 1 is characterized in that, said integrated detector also comprises: electricity isolated layer is used for the signal of telecommunication of said detecting unit and the signal of telecommunication of said data recovery unit are isolated.
3. integrated detector according to claim 1; It is characterized in that; The incident direction of second light signal that the incident direction of first light signal that said detecting unit receives and said data recovery unit receive is opposite; And the incident direction of the incident direction of said first light signal and said second light signal all is parallel to said electricity isolated layer; Or the incident direction of first light signal of said detecting unit reception is identical with the incident direction of second light signal of said data recovery unit reception, and the incident direction of the incident direction of said first light signal and said second light signal all is parallel to said electricity isolated layer.
4. integrated detector according to claim 1 is characterized in that, said integrated detector also comprises: substrate, said detecting unit and said data recovery unit all are integrated on the said substrate, and said substrate is the semi-insulating inp material.
5. integrated detector according to claim 4 is characterized in that, said detecting unit comprises: first table top, first metal electrode layer, the first sub-n utmost point layer and first reflecting surface, wherein,
Said first table top is after depositing n utmost point layer, absorbed layer, P utmost point layer on the said substrate successively; Utilize photoetching process; Etching P utmost point layer and absorbed layer are formed; And the indium phosphide that said n utmost point layer mixes for the N type, said absorbed layer is the InGaAsP material, the indium phosphide that said P utmost point layer mixes for the P type;
Said first metal electrode layer is behind depositing metal layers on said first table top, utilizes chemical corrosion method, and it is formed to corrode said metal level;
The said first sub-n utmost point layer is to utilize the wet etching method, and the said n utmost point of etching layer is formed;
Said first reflecting surface is to utilize the wet etching method, and the etching said first sub-n utmost point layer is formed;
Said data recovery unit comprises: second table top, second metal electrode layer, the second sub-n utmost point layer and second reflecting surface, wherein,
Said second table top is after depositing said n utmost point layer, absorbed layer, P utmost point layer on the said substrate successively; Utilize photoetching process; Etching said P utmost point layer and absorbed layer are formed; And the indium phosphide that said n utmost point layer mixes for the N type, said absorbed layer is the InGaAsP material, the indium phosphide that said P utmost point layer mixes for the P type;
Said second metal electrode layer is behind depositing metal layers on said second table top, utilizes chemical corrosion method, and it is formed to corrode said metal level;
The said second sub-n utmost point layer is to utilize the wet etching method, and the said n utmost point of etching layer is formed;
Said second reflecting surface is to utilize the wet etching method, and the etching said second sub-n utmost point layer is formed.
6. integrated detector according to claim 4; It is characterized in that; Said detecting unit also comprises: the first light inlet inclined-plane; The said first light inlet inclined-plane is to utilize the wet etching method, and the etching said first sub-n utmost point layer is formed, and the said first sub-n utmost point layer is injected on the said first light inlet inclined-plane of said first optical signals;
Said data recovery unit also comprises: the second light inlet inclined-plane, and the said second light inlet inclined-plane is to utilize the wet etching method, and the etching said second sub-n utmost point layer is formed, and the said second sub-n utmost point layer is injected on the said second light inlet inclined-plane of said second optical signals.
7. the detection method of an integrated detector is characterized in that, said method comprises:
First light signal that reception is sent from optical network unit after opto-electronic conversion, detects the power of the signal of telecommunication after the said conversion;
Reception after opto-electronic conversion, recovers the data-signal that is carried on the light from second light signal that optical line terminal sends.
8. optical module; Comprise: laser, filter and first fiber waveguide; Said laser is connected with said filter through said first fiber waveguide; It is characterized in that said optical module also comprises: the integrated detector and second fiber waveguide, said integrated detector is connected with said laser through said second fiber waveguide; Wherein,
Said laser is used to produce first light signal, through said first fiber waveguide said first light signal is sent to said integrated detector;
Said filter is used to receive second light signal that optical line terminal sends, and said second light signal is sent to said integrated detector;
Said integrated detector is used to receive first light signal that sends from optical network unit, after opto-electronic conversion, detects the power of the signal of telecommunication after the said conversion; And receive second light signal that sends from optical line terminal, after opto-electronic conversion, recover the data-signal that is carried on the light.
9. optical module according to claim 8 is characterized in that, said integrated detector specifically comprises: detecting unit and data recovery unit, wherein,
Said detecting unit is used to receive first light signal that sends from optical network unit, after opto-electronic conversion, detects the power of the signal of telecommunication after the said conversion;
Said data recovery unit is used to receive second light signal that sends from optical line terminal, after opto-electronic conversion, recovers the data-signal that is carried on the light.
10. optical module according to claim 8 is characterized in that, said integrated detector also comprises: electricity isolated layer is used for the signal of telecommunication of said retrieval unit and the signal of telecommunication of said data recovery unit are isolated.
11. optical module according to claim 8; It is characterized in that; The incident direction of second light signal that the incident direction of first light signal that said detecting unit receives and said data recovery unit receive is opposite; And the incident direction of the incident direction of said first light signal and said second light signal all is parallel to said electricity isolated layer; Or the incident direction of first light signal of said detecting unit reception is identical with the incident direction of second light signal of said data recovery unit reception, and the incident direction of the incident direction of said first light signal and said second light signal all is parallel to said electricity isolated layer.
12. optical module according to claim 9 is characterized in that, said detecting unit comprises: first table top, first metal electrode layer, the first sub-n utmost point layer and first reflecting surface, wherein,
Said first table top is after depositing n utmost point layer, absorbed layer, P utmost point layer on the said substrate successively; Utilize photoetching process; Etching P utmost point layer and absorbed layer are formed; And the indium phosphide that said n utmost point layer mixes for the N type, said absorbed layer is the InGaAsP material, the indium phosphide that said P utmost point layer mixes for the P type;
Said first metal electrode layer is behind depositing metal layers on said first table top, utilizes chemical corrosion method, and it is formed to corrode said metal level;
The said first sub-n utmost point layer is to utilize the wet etching method, and the said n utmost point of etching layer is formed;
Said first reflecting surface is to utilize the wet etching method, and the etching said first sub-n utmost point layer is formed;
Said data recovery unit comprises: second table top, second metal electrode layer, the second sub-n utmost point layer and second reflecting surface, wherein,
Said second table top is after depositing said n utmost point layer, absorbed layer, P utmost point layer on the said substrate successively; Utilize photoetching process; Etching said P utmost point layer and absorbed layer are formed; And the indium phosphide that said n utmost point layer mixes for the N type, said absorbed layer is the InGaAsP material, the indium phosphide that said P utmost point layer mixes for the P type;
Said second metal electrode layer is behind depositing metal layers on said second table top, utilizes chemical corrosion method, and it is formed to corrode said metal level;
The said second sub-n utmost point layer is to utilize the wet etching method, and the said n utmost point of etching layer is formed;
Said second reflecting surface is to utilize the wet etching method, and the etching said second sub-n utmost point layer is formed.
13. optical module according to claim 12; It is characterized in that; Said detecting unit also comprises: the first light inlet inclined-plane; The said first light inlet inclined-plane is to utilize the wet etching method, and the etching said first sub-n utmost point layer is formed, and the said first sub-n utmost point layer is injected on the said first light inlet inclined-plane of said first optical signals;
Said data recovery unit also comprises: the second light inlet inclined-plane, and the said second light inlet inclined-plane is to utilize the wet etching method, and the etching said second sub-n utmost point layer is formed, and the said second sub-n utmost point layer is injected on the said second light inlet inclined-plane of said second optical signals.
14. light network system; Said optical network system comprises: optical line terminal, optical network unit and optical distribution network; Said optical line terminal is connected with said optical network unit through optical distribution network; It is characterized in that said optical network unit comprises described any one integrated detector like claim 1-6.
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| CN105515675A (en) * | 2014-09-26 | 2016-04-20 | 华为技术有限公司 | Light transmitting-receiving device, optical line terminal, optical network unit (ONU) and passive optical network (PON) system |
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